CN210575940U - Novel radio frequency transmission structure - Google Patents
Novel radio frequency transmission structure Download PDFInfo
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- CN210575940U CN210575940U CN201921188868.3U CN201921188868U CN210575940U CN 210575940 U CN210575940 U CN 210575940U CN 201921188868 U CN201921188868 U CN 201921188868U CN 210575940 U CN210575940 U CN 210575940U
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Abstract
The utility model discloses a novel radio frequency transmission structure, which comprises a silicon substrate, a radio frequency signal transmission Through Silicon Via (TSV) and a plurality of grounding Through Silicon Vias (TSV), wherein the TSV is arranged on the silicon substrate; the radio frequency signal transmission silicon through hole TSV is arranged in the center of a circle formed by the surrounding of the grounding silicon through hole TSV, and a quasi-coaxial structure is formed between the radio frequency signal transmission silicon through hole TSV and the grounding silicon through hole TSV; the inner diameter of the radio frequency signal transmission silicon through hole TSV is larger than that of the grounding silicon through hole TSV. The utility model provides a radio frequency transmission structure is through the mode that the hollow structure TSV of small-size height depth-diameter ratio TSV and traditional aperture combined together, runs through the internal electric interconnection route of microelectronic chip perpendicularly in the realization, when supporting the three-dimensional range upon range of integration of chip level and encapsulation, further dwindles the encapsulation size, and it is not good to solve high frequency transmission performance, and the great shortcoming of traditional TSV stress realizes the perpendicular interconnected structure of high reliability, low-loss radio frequency.
Description
Technical Field
The utility model belongs to the technical field of the TSV, concretely relates to novel radio frequency transmission structure.
Background
Under the electromagnetic environment of a complex battlefield, how to better play the role of the electronic information equipment becomes more difficult to achieve better combat efficiency, and higher requirements are provided for the intellectualization, the small-sized telephone and the light weight of the electronic information equipment.
The TSV (Through Silicon Via) technology can provide an electrical interconnection path vertically penetrating Through the body of a microelectronic chip, supports chip-level three-dimensional stacking integration and packaging, has the advantages of small volume, high density, high integration degree, small interconnection time delay and the like, can replace a traditional hybrid integrated module based on a metal cavity or LTCC (low temperature co-fired ceramic), greatly reduces the module volume and weight, and is a mainstream method for the integration and miniaturization development of a current radio frequency system.
However, the conventional TSV has the following disadvantages:
firstly, the stress is larger due to the full copper filling;
the occupied area of the size of the aperture ratio 3:1 is larger, and the occupied area is larger when the substrate is thicker;
the radio frequency performance in the vertical direction is not good, especially the high frequency performance.
Utility model inner
Not enough to the above-mentioned among the prior art, the utility model provides a novel radio frequency transmission structure has solved the great problem of stress among the traditional radio frequency transmission structure.
In order to achieve the above object, the utility model adopts the following technical scheme: a novel radio frequency transmission structure comprises a silicon substrate, and a radio frequency signal transmission Through Silicon Via (TSV) and a plurality of grounding Through Silicon Vias (TSV) which are arranged on the silicon substrate;
the inner diameter of the radio frequency signal transmission through silicon via TSV is larger than that of the grounding through silicon via TSV.
Furthermore, the radio frequency signal transmission through silicon via TSV is arranged in the center of a circle formed by the grounding through silicon via TSV in a surrounding mode, and a coaxial-like structure is formed between the radio frequency signal transmission through silicon via TSV and the grounding through silicon via TSV.
Further, the aperture ratio of the radio frequency signal transmission through silicon vias TSV is 3: 1;
the aperture ratio of the grounding Through Silicon Via (TSV) is 10: 1.
Further, the radio frequency signal transmission through silicon via TSV is a hollow and non-full copper electroplating filling structure.
Further, the grounding through silicon via TSV is a hollow full-copper electroplating filling structure.
Further, the distance between the radio frequency signal transmission through silicon via TSV and the grounding through silicon via TSV is half of the diameter of the radio frequency signal transmission through silicon via TSV.
Furthermore, the contact surface between the silicon substrate and the radio frequency signal transmission through silicon vias TSV, the contact surface between the silicon substrate and the plurality of grounding through silicon vias TSV, and the surface of the silicon substrate are all provided with an insulating layer.
Further, the insulating layer is SiO2An insulating layer.
The utility model has the advantages that:
1. the occupied area of the structure is smaller, and the high-density integration is facilitated: in practical use, the packaging module is simultaneously provided with a plurality of vertical interconnection structures, a plurality of coaxial structures are required to ensure the radio frequency performance, and are also required to be fully isolated, a large number of grounding holes are required among transmission structures, and under the condition of ensuring the same grounding quantity, all grounding TSVs in the structure adopt small-size TSV (10:1) with high depth-diameter ratio, and the grounding area is much smaller than that of the conventional TSV (3: 1).
2. The radio frequency property is good: the coaxial-like structure can ensure the radio frequency performance, and the high-density grounding TSV isolation wall can ensure that the isolation of a plurality of radio frequency transmission structures is better under the same area.
Drawings
Fig. 1 is a schematic diagram of the novel radio frequency transmission structure of the present invention.
Fig. 2 is a schematic view of the coaxial structure of the present invention.
Fig. 3 is the simulation model schematic diagram of the novel radio frequency transmission structure of the present invention.
Fig. 4 is a schematic diagram of the preparation process of the novel radio frequency transmission structure of the present invention.
Fig. 5 is a schematic diagram illustrating a comparison between two GSG transmission structures in the embodiment of the present invention.
Fig. 6 is a schematic diagram of multiple signal transmission designed by the method of the present invention in the embodiment provided by the present invention.
Fig. 7 is a schematic diagram of heterogeneous integrated interconnection in an embodiment provided by the present invention.
Fig. 8 is a schematic diagram of the distribution of a plurality of rf transmission structures according to the present invention.
Wherein: 1. a silicon substrate; 2. the radio frequency signal transmission silicon through hole TSV; 3. and the silicon through hole TSV is grounded.
Detailed Description
The following description of the embodiments of the present invention is provided to facilitate the understanding of the present invention by those skilled in the art, but it should be understood that the present invention is not limited to the scope of the embodiments, and various changes may be made apparent to those skilled in the art within the spirit and scope of the present invention as defined and defined by the appended claims.
As shown in fig. 1, a novel radio frequency transmission structure includes a silicon substrate 1, and a radio frequency signal transmission through silicon via TSV 2 and a plurality of grounding through silicon vias TSV 3 disposed on the silicon substrate;
the inner diameter of the radio frequency signal transmission silicon through hole TSV 2 is larger than that of the grounding silicon through hole TSV 3.
The radio frequency signal transmission through silicon via TSV 2 is arranged in the center of a circle formed by the grounding through silicon via TSV 3 in an enclosing mode, and forms a coaxial-like structure with the round; the coaxial-like structure can ensure the radio frequency performance, and the high-density grounding TSV isolation wall can ensure that the isolation of a plurality of radio frequency transmission structures is better under the same area.
The aperture ratio of the radio frequency signal transmission through silicon via TSV 2 is 3:1, and the radio frequency signal transmission through silicon via TSV is a hollow and non-full copper electroplating filling structure, so that stress can be reduced, and transmission of radio frequency signals is facilitated;
the aperture ratio of the grounding through silicon via TSV 3 is 10:1, and the grounding through silicon via TSV is a hollow full-copper electroplating filling structure; the Through Silicon Via (TSV) is a TSV with a small size to depth-diameter ratio, compared with the traditional TSV, the TSV with the small size and the high depth-diameter ratio is more beneficial to reducing the size, high-density integration is achieved, meanwhile, the TSV with the small aperture and the high depth-diameter ratio is also much smaller in stress compared with the traditional all-copper TSV, the reliability of a transmission structure is guaranteed through redundancy design, and the transmission structure fully combines the advantages of the TSV with the size of two inches.
In order to realize high-frequency signal transmission, a coaxial-like structure is generally adopted, and a hollow structure TSV is taken as an example, as shown in fig. 1 (b). The TSV at the center transmits radio frequency signals, and the peripheral TSV is grounded. Due to processing limitations, the hole-to-hole spacing must be greater than or equal to 0.5 hole diameter, so the larger the hole diameter, the more sparse the surrounding ground. By adopting the structure combining the large and small TSVs, the TSV for transmitting radio frequency signals still adopts the hollow TSV with better radio frequency performance, and the surrounding grounding TSV adopts the small-size TSV.
A layer of SiO is arranged on the contact surface of the silicon substrate 1 and the radio frequency signal transmission through silicon via TSV 2, the contact surfaces of the silicon substrate 1 and the grounding through silicon vias TSV 3 and the surface of the silicon substrate 12An insulating layer.
In an embodiment of the present invention, the method for designing and manufacturing the transmission structure is provided as follows:
selecting the thickness of a silicon substrate, and determining the size D2 of the hollow TSV as shown in FIG. 2;
calculating the dimension D1 of the peripheral ground of the coaxial structure by using simulation software, as shown in FIG. 3;
and thirdly, the calculated size is brought into the structure, as shown in fig. 3, the diameter D2 of the hollow TSV in the middle and the diameter D1 of the peripheral grounding TSV annular structure are determined by the thickness of the silicon substrate, the distance adopts the minimum distance of 0.5-aperture, a simulation model is built, and the actual structure is finely adjusted to meet the actual use requirement.
The process implementation of this structure is shown in fig. 4. The process is as follows:
(a) preparing a small-size TSV, namely manufacturing TSV blind holes with large and small apertures by adopting a DRIE process;
(b) deposition of SiO2 insulating layer: forming a compact SiO2 insulating layer on the surface of the silicon substrate and the side wall of the small-size TSV blind hole in a thermal oxidation mode;
(c) sputtering a compact and continuous TiW/Cu barrier layer seed layer on the surface of the silicon wafer and the side wall of the TSV blind hole, filling the small-size TSV blind hole with the high depth-diameter ratio by adopting an electroplating copper process, and removing the surface electroplating thickened copper layer and the TiW/Cu barrier layer by CMP;
(d) and (3) thinning and polishing process: the sample wafer is placed on the carrier wafer in a temporary bonding mode, thinning, grinding and polishing processes are carried out on the back until one end of the small-size TSV is exposed, an oxide layer is deposited through PECVD, a window is opened on the oxide layer through RIE (reactive ion etching) process, and one end of the copper TSV is exposed. Due to the fact that the sizes of the TSVs are different, electroplating and filling of the small-size TSVs are completed, the side wall electroplating of the large-hole TSV is just completed, and the hollow-structure TSV is formed, and therefore the large-hole TSV and the small-hole TSV can be processed simultaneously.
It should be noted that the utility model discloses in, during this radio frequency transmission structure of design preparation, only transmit radio frequency signal's large aperture through silicon via TSV need carry out the emulation design process, other small aperture through silicon via TSV designs that are used for transmitting ground signal etc. need not carry out the emulation process, consequently, transmission structure's preparation time has been practiced thrift to a certain extent.
In one embodiment of the present invention, other radio frequency transmission structures are provided that can be derived from the structure; the utility model discloses the structure is applicable to the perpendicular interconnected structure of arbitrary radio frequency of silicon substrate, and wherein radio frequency signal sampling hollow structure's large aperture TSV is favorable to high frequency signal transmission, and other signals (ground connection, digit and analog signal) adopt the small aperture TSV of solid packing, and the effect is including keeping apart, shielding, digital signal or analog signal interconnection, is favorable to dwindling the base plate area.
For example, as shown in fig. 5(a), the conventional GSG structure has a large distance between the small-aperture TSV and the large-aperture TSV, and the number and arrangement of the ground TSV may be adjusted according to the simulation result, so as to adjust the GSG structure formed by mixing the sizes shown in fig. 5 (b).
The utility model discloses the structure can regard as the radio frequency, and ground connection, the perpendicular interconnection of multiple signals such as digit or analog signal is applicable to heterogeneous integration (as shown in fig. 6), and when utilizing the integrated radio frequency chip on the silicon substrate, the radio frequency port interconnection mode of chip is hollow large aperture TSV, and the power supply of chip, control port adopt small aperture TSV, as shown in fig. 7.
In the description of the present invention, it is to be understood that the terms "center", "thickness", "upper", "lower", "horizontal", "top", "bottom", "inner", "outer", "radial", and the like, indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are used merely for convenience in describing the present invention and for simplifying the description, but do not indicate or imply that the equipment or components referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or an implicit indication of the number of technical features. Thus, features defined as "first", "second", "third" may explicitly or implicitly include one or more of the features.
The utility model has the advantages that:
1. the occupied area of the structure is smaller, and the high-density integration is facilitated: in practical use, the packaging module is simultaneously provided with a plurality of vertical interconnection structures, a plurality of coaxial structures are required to ensure the radio frequency performance, and are also required to be fully isolated, a large number of grounding holes are required among transmission structures, and under the condition of ensuring the same grounding quantity, all grounding TSVs in the structure adopt small-size TSV (10:1) with high depth-diameter ratio, and the grounding area is much smaller than that of the conventional TSV (3: 1).
2. The radio frequency property is good: the coaxial-like structure can ensure radio frequency performance, and the high-density grounding TSV isolation wall can ensure that the isolation of a plurality of radio frequency transmission structures is better under the same area (as shown in FIG. 8).
Claims (8)
1. A novel radio frequency transmission structure is characterized by comprising a silicon substrate (1), and a radio frequency signal transmission Through Silicon Via (TSV) (2) and a plurality of grounding Through Silicon Vias (TSV) (3) which are arranged on the silicon substrate (1);
the inner diameter of the radio frequency signal transmission silicon through hole TSV (2) is larger than that of the grounding silicon through hole TSV (3).
2. The novel radio frequency transmission structure according to claim 1, wherein the radio frequency signal transmission through silicon via TSV (2) is arranged at a center of a circle surrounded by the grounding through silicon via TSV (3) to form a coaxial-like structure therewith.
3. The novel radio frequency transmission structure according to claim 1, wherein the radio frequency signal transmission through-silicon vias TSV (2) have an aperture ratio of 3: 1;
the aperture ratio of the grounding through-silicon via TSV (3) is 10: 1.
4. The novel radio frequency transmission structure according to claim 1, wherein the radio frequency signal transmission through-silicon-via TSV (2) is a hollow and non-full copper electroplating filling structure.
5. The novel radio frequency transmission structure according to claim 1, wherein the grounded through-silicon-via TSV (3) is a hollow all-copper electroplated fill structure.
6. The novel radio frequency transmission structure according to claim 1, wherein the distance between the radio frequency signal transmission through silicon via TSV (2) and the ground through silicon via TSV (3) is half of the diameter of the radio frequency signal transmission through silicon via TSV (2).
7. The novel radio frequency transmission structure according to claim 1, wherein an insulating layer is disposed on the surface of the silicon substrate (1), the contact surface of the silicon substrate (1) and the radio frequency signal transmission through silicon via TSV (2), the contact surface of the silicon substrate (1) and the plurality of grounding through silicon vias TSV (3), and the surface of the silicon substrate (1).
8. The novel radio frequency transmission structure according to claim 7, wherein the insulating layer is SiO2An insulating layer.
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| CN201921188868.3U CN210575940U (en) | 2019-07-25 | 2019-07-25 | Novel radio frequency transmission structure |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110459528A (en) * | 2019-07-25 | 2019-11-15 | 成都嘉纳海威科技有限责任公司 | A kind of New-type radio-frequency transmission structure |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110459528A (en) * | 2019-07-25 | 2019-11-15 | 成都嘉纳海威科技有限责任公司 | A kind of New-type radio-frequency transmission structure |
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