CN110456134A - Current monitoring circuit and laser application circuit - Google Patents

Current monitoring circuit and laser application circuit Download PDF

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Publication number
CN110456134A
CN110456134A CN201910801031.XA CN201910801031A CN110456134A CN 110456134 A CN110456134 A CN 110456134A CN 201910801031 A CN201910801031 A CN 201910801031A CN 110456134 A CN110456134 A CN 110456134A
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China
Prior art keywords
circuit
channel mos
mos pipe
connect
driving circuit
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CN201910801031.XA
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CN110456134B (en
Inventor
郭迪
赵聪
陈强军
孙向明
高超嵩
许怒
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Huazhong Normal University
Central China Normal University
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Huazhong Normal University
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/0092Arrangements for measuring currents or voltages or for indicating presence or sign thereof measuring current only
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/04Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042Electrical excitation ; Circuits therefor

Abstract

The invention discloses a kind of current monitoring circuit and laser application circuits.The present invention determines circuit by the way that upper biasing circuit, below-center offset circuit, operational amplifier, the first N-channel MOS pipe and electric current is arranged, and forms a kind of current monitoring circuit.Specifically, the non-inverting input terminal of upper biasing circuit and operational amplifier connects, and upper biasing circuit is connect with the first reference point of default laser driving circuit;The inverting input terminal of operational amplifier is connect with the voltage output end of default laser driving circuit;Below-center offset circuit is connect with the second reference point in default laser driving circuit;Electric current determines the second end of circuit, for determining bias current.It can be seen that, it can guarantee that the above second end of biasing circuit and the voltage of voltage output end are consistent using operational amplifier, so that electric current can be replicated accurately, also the bias current that can accurately check default laser driving circuit solves the technical issues of bias current under more difficult monitoring fast state.

Description

Current monitoring circuit and laser application circuit
Technical field
The present invention relates to laser actuation techniques field more particularly to current monitoring circuit and laser application circuits.
Background technique
With regard to high velocity vertical cavity surface emitting lasers (Vertical Cavity Surface Emitting Laser, VCSEL) for driving chip, when high speed VCSEL driving chip is under high-speed cruising state, it is more difficult to monitor high speed fortune Bias current under row state.
This is because the bias current under fast state can fluctuate, it is difficult accurately to detect.
So, it is believed that, it there is technical issues that under more difficult monitoring fast state.
Above content is only used to facilitate the understanding of the technical scheme, and is not represented and is recognized that above content is existing skill Art.
Summary of the invention
The main purpose of the present invention is to provide a kind of current monitoring circuit and laser application circuits, it is intended to which it is more difficult to solve The technical issues of monitoring the bias current under fast state.
To achieve the above object, the present invention provides a kind of current monitoring circuit, and the current monitoring circuit includes upper biasing Circuit, below-center offset circuit, operational amplifier, the first N-channel metal-oxide semiconductor fieldeffect transistor metal-oxide-semiconductor and electricity It flows and determines circuit;
The first end of the upper biasing circuit is connect with the first default power supply, the second end point of the upper biasing circuit It is not connect with the drain electrode of the non-inverting input terminal of the operational amplifier and the first N-channel MOS pipe, the upper biasing circuit Third end connect with the first reference point in default laser driving circuit, first reference point for export first reference Signal;
The output end of the operational amplifier is connect with the grid of the first N-channel MOS pipe, the operational amplifier Inverting input terminal is connect with the voltage output end in the default laser driving circuit;
The source electrode of the first N-channel MOS pipe is determined with the first end of the below-center offset circuit and the electric current respectively The first end of circuit connects, the second end ground connection of the below-center offset circuit;
The third end of the below-center offset circuit is connect with the second reference point in the default laser driving circuit, described Second reference point is in first reference point and second reference for exporting the second reference signal, the voltage output end Between point;
The electric current determines the second end of circuit, for true according to first reference signal and second reference signal The bias current of the fixed default laser driving circuit.
Preferably, second reference signal includes the first sub- reference signal and the second sub- reference signal, the upper biasing Circuit includes the first P-channel metal-oxide-semiconductor, includes the second N-channel MOS pipe and third N-channel MOS pipe in the below-center offset circuit;
The source electrode of the first P-channel metal-oxide-semiconductor is connect with the described first default power supply;
The grid of the first P-channel metal-oxide-semiconductor is connect with the first reference point in the default laser driving circuit;
The first P-channel metal-oxide-semiconductor drain electrode respectively with the non-inverting input terminal of the operational amplifier and the first N The drain electrode of channel MOS tube connects;
The source electrode of the first N-channel MOS pipe is true with the drain electrode of the second N-channel MOS pipe and the electric current respectively Determine the first end connection of circuit;
The grid of the second N-channel MOS pipe, for obtaining first son in the default laser driving circuit Reference signal;
The source electrode of the second N-channel MOS pipe is connect with the drain electrode of the third N-channel MOS pipe, the third N-channel The source electrode of metal-oxide-semiconductor is grounded;
The grid of the third N-channel MOS pipe, for obtaining second son in the default laser driving circuit Reference signal.
Preferably, the electric current determines that circuit includes the first current mirror and the second current mirror;
The drain electrode of the second N-channel MOS pipe is connect with the first end of first current mirror, first current mirror Second end is connect with the source electrode of the third N-channel MOS pipe;
The third end of first current mirror is connect with the first end of second current mirror;
The second end of second current mirror, for determining the bias current of the default laser driving circuit.
Preferably, first current mirror includes the 4th N-channel MOS pipe, the 5th N-channel MOS pipe, the 6th N-channel MOS pipe And the 7th N-channel MOS pipe;
The source electrode of the first N-channel MOS pipe respectively with the drain electrode of the second N-channel MOS pipe, the 4th N-channel The drain electrode of metal-oxide-semiconductor and grid connection;
The source electrode of the 4th N-channel MOS pipe is connect with the drain electrode of the 5th N-channel MOS pipe and grid respectively, institute The source electrode for stating the 5th N-channel MOS pipe is connect with the source electrode of the third N-channel MOS pipe, the source electrode of the 5th N-channel MOS pipe Ground connection;
The grid of the 4th N-channel MOS pipe is connect with the grid of the 6th N-channel MOS pipe, the 6th N-channel The drain electrode of metal-oxide-semiconductor is connect with the first end of second current mirror;
The source electrode of the 6th N-channel MOS pipe is connect with the drain electrode of the 7th N-channel MOS pipe, the 7th N-channel The grid of metal-oxide-semiconductor is connect with the grid of the 5th N-channel MOS pipe, the source electrode and the 5th N of the 7th N-channel MOS pipe The source electrode of channel MOS tube connects.
Preferably, second current mirror includes the second P-channel metal-oxide-semiconductor and third P-channel metal-oxide-semiconductor;
The third end of first current mirror is connect with the drain electrode of the second P-channel metal-oxide-semiconductor and grid respectively, described The grid of second P-channel metal-oxide-semiconductor is connect with the grid of the third P-channel metal-oxide-semiconductor;
The source electrode of the third P-channel metal-oxide-semiconductor respectively with the source electrode of the second P-channel metal-oxide-semiconductor and described first pre- If power supply connects;
The drain electrode of the third P-channel metal-oxide-semiconductor, for according to first reference signal, the first sub- reference signal And the second sub- reference signal determines the bias current of the default laser driving circuit.
Preferably, the electric current determines that circuit further includes the 8th N-channel MOS pipe;
The second end of second current mirror is connect with the drain electrode of the 8th N-channel MOS pipe and grid respectively;
The source electrode of the 8th N-channel MOS pipe, for determining the bias current of the default laser driving circuit.
Preferably, the current monitoring circuit further includes outer connecting resistance;
The source electrode of the 8th N-channel MOS pipe is connect with the first end of the outer connecting resistance;
The second end of the outer connecting resistance determines described default sharp for obtaining bias voltage according to the bias voltage The bias current of light device driving circuit.
To achieve the above object, the present invention also proposes a kind of laser application circuit, the laser application circuit presets Laser driving circuit and current monitoring circuit as described above;
The default laser driving circuit is connect with the current monitoring circuit.
It preferably, include the first driving circuit, the second driving circuit and switch in the default laser driving circuit;
The first end of first driving circuit is connect with the second default power supply, and the second of first driving circuit End is connect with the first end of the switch, and the second end of the switch is connect with the first end of second driving circuit;
The first end of first driving circuit is connect with the grid of the first P-channel metal-oxide-semiconductor;
The first end of the switch is connect with the inverting input terminal of the operational amplifier;
The first end of second driving circuit is connect with the grid of the second N-channel MOS pipe, the second driving electricity The second end on road is connect with the grid of the third N-channel MOS pipe, the third end ground connection of second driving circuit.
Preferably, the default laser driving circuit is default high velocity vertical cavity surface emitting lasers driving circuit.
Technical solution of the present invention is by being arranged upper biasing circuit, below-center offset circuit, operational amplifier, the first N-channel MOS pipe And electric current determines circuit, forms a kind of current monitoring circuit.In the current monitoring circuit, the second end of upper biasing circuit Connect respectively with the drain electrode of the non-inverting input terminal of operational amplifier and the first N-channel MOS pipe, the third end of upper biasing circuit with The first reference point connection in default laser driving circuit, the first reference point will export the first reference signal;Operational amplifier Output end connect with the grid of the first N-channel MOS pipe, the inverting input terminal of operational amplifier and default laser driving circuit In voltage output end connection;The source electrode of first N-channel MOS pipe determines electricity with the first end of below-center offset circuit and electric current respectively The first end on road connects;The third end of below-center offset circuit is connect with the second reference point in default laser driving circuit, and second Reference point will export the second reference signal, and voltage output end is between the first reference point and the second reference point;Electric current determines electricity At the second end on road bias current will be determined according to the first reference signal and the second reference signal.As it can be seen that being put by using operation Big device can guarantee that the second end of upper biasing circuit and the voltage of voltage output end are consistent, and then ensure that electric current can be accurate Duplication, also can accurately check the bias current of default laser driving circuit, solve under more difficult monitoring fast state Bias current the technical issues of.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this Some embodiments of invention for those of ordinary skill in the art without creative efforts, can be with The structure shown according to these attached drawings obtains other attached drawings.
Fig. 1 is the functional block diagram of one embodiment of current monitoring circuit of the present invention;
Fig. 2 is the structural schematic diagram of one embodiment of current monitoring circuit of the present invention;
Fig. 3 is the default laser driving circuit schematic diagram of one embodiment of current monitoring circuit of the present invention.
Drawing reference numeral explanation:
Label Title Label Title
100 Upper biasing circuit 402 Second driving circuit
200 Below-center offset circuit VDD First default power supply
300 Electric current determines circuit AMP Operational amplifier
301 First current mirror NM1-NM8 First to the 8th N-channel MOS pipe
302 Second current mirror PM1-PM3 First to third P-channel metal-oxide-semiconductor
401 First driving circuit SW Switch
The embodiments will be further described with reference to the accompanying drawings for the realization, the function and the advantages of the object of the present invention.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete Site preparation description, it is clear that described embodiment is only a part of the embodiments of the present invention, instead of all the embodiments.Base Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts it is all its His embodiment, shall fall within the protection scope of the present invention.
It is to be appreciated that the directional instruction (such as up, down, left, right, before and after ...) of institute is only used in the embodiment of the present invention In explaining in relative positional relationship, the motion conditions etc. under a certain particular pose (as shown in the picture) between each component, if should When particular pose changes, then directionality instruction also correspondingly changes correspondingly.
In addition, the description for being related to " first ", " second " etc. in the present invention is used for description purposes only, and should not be understood as referring to Show or imply its relative importance or implicitly indicates the quantity of indicated technical characteristic." first ", " are defined as a result, Two " feature can explicitly or implicitly include at least one of the features.In addition, the technical solution between each embodiment can It to be combined with each other, but must be based on can be realized by those of ordinary skill in the art, when the combination of technical solution occurs It is conflicting or when cannot achieve should people think that the combination of this technical solution is not present, also not the present invention claims protection Within the scope of.
The present invention proposes a kind of current monitoring circuit, wherein Fig. 1 is the function of one embodiment of current monitoring circuit of the present invention Module map, Fig. 2 are the structural schematic diagram of one embodiment of current monitoring circuit of the present invention, and Fig. 3 is current monitoring circuit one of the present invention The default laser driving circuit schematic diagram of embodiment.
Please in detail refering to fig. 1 to Fig. 3, in embodiments of the present invention, the current monitoring circuit includes upper biasing circuit 100, below-center offset circuit 200, operational amplifier AMP, the first N-channel metal-oxide semiconductor fieldeffect transistor (Metal-Oxide-Semiconductor, metal-oxide-semiconductor) NM1 and electric current determine circuit 300;
The first end of the upper biasing circuit 100 is connect with the first default power supply VDD, the upper biasing circuit 100 Second end respectively with the drain electrode of the non-inverting input terminal of the operational amplifier AMP and the first N-channel MOS pipe NM1 connect It connects, the third end of the upper biasing circuit 100 is connect with the first reference point in default laser driving circuit, first ginseng Examination point is for exporting the first reference signal;
The output end of the operational amplifier AMP is connect with the grid of the first N-channel MOS pipe NM1, and the operation is put The inverting input terminal of big device AMP is connect with the voltage output end in the default laser driving circuit;
The source electrode of the first N-channel MOS pipe NM1 respectively with the first end of the below-center offset circuit 200 and the electricity Flow the first end connection for determining circuit 300, the second end ground connection of the below-center offset circuit 200;
The third end of the below-center offset circuit 200 is connect with the second reference point in the default laser driving circuit, Second reference point is in first reference point and described second for exporting the second reference signal, the voltage output end Between reference point;
The electric current determines the second end of circuit 300, for being believed according to first reference signal and second reference Number determine the bias current of the default laser driving circuit.
It should be noted that the first reference signal can be denoted as to I_up, the second reference signal is denoted as I_down, presets laser The bias current of device driving circuit is denoted as I_out, and the voltage output end in default laser driving circuit is denoted as Vref.
It is understood that the present embodiment proposes a kind of new current monitoring circuit, the current monitoring circuit can be passed through To detect the bias current of default laser driving circuit.The default laser driving circuit can be high speed VCSEL driving chip In driving circuit, i.e., default laser driving circuit can be default high speed VCSEL laser driving circuit.
Using understanding, for default high speed VCSEL laser driving circuit, presets high speed VCSEL laser and drive It include the first reference point, voltage output end Vref and the second reference point in dynamic circuit, moreover, default high speed VCSEL laser Voltage output end Vref in driving circuit is in the first reference point and second in default high speed VCSEL laser driving circuit Between reference point, in laser operation, bias current to be detected will be provided by voltage output end Vref.
In the concrete realization, due to introducing operational amplifier AMP, operational amplifier AMP can guarantee upper biasing circuit 100 second end and the voltage of the voltage output end Vref in default laser driving circuit are always consistent, can will it is upper partially Circuit node at the second end of circuits 100 is denoted as node A, i.e. node A and the voltage of voltage output end Vref remain Unanimously.
It is understood that in view of the electric current moment in default high speed VCSEL laser driving circuit is all occurring Variation, and the electric current changed will lead to the voltage fluctuation at node A, still, by can guarantee node with operational amplifier AMP The voltage of A and voltage output end Vref are consistent, and then have promoted electric current that can accurately be replicated under high speed operation state To current monitoring circuit side.As it can be seen that since the electric current for presetting laser driving circuit side can be accurately copied to current monitoring Circuit side, i.e. the first reference signal I_up and the second reference signal I_down can be accurately copied to current monitoring circuit side, The biased electrical that can determine default laser driving circuit according to the first reference signal I_up and the second reference signal I_down Flow I_out.
Technical solution of the present invention is by being arranged upper biasing circuit 100, below-center offset circuit 200, operational amplifier AMP, the first N Channel MOS tube NM1 and electric current determine circuit 300, form a kind of current monitoring circuit.In the current monitoring circuit, on The drain electrode with the non-inverting input terminal of operational amplifier AMP and the first N-channel MOS pipe NM1 respectively of the second end of biasing circuit 100 Connection, the third end of upper biasing circuit 100 are connect with the first reference point in default laser driving circuit, and the first reference point will Export the first reference signal;The output end of operational amplifier AMP is connect with the grid of the first N-channel MOS pipe NM1, operation amplifier The inverting input terminal of device AMP is connect with the voltage output end in default laser driving circuit;The source of first N-channel MOS pipe NM1 Pole determines that the first end of circuit 300 is connect with the first end of below-center offset circuit 200 and electric current respectively;Below-center offset circuit 200 Third end is connect with the second reference point in default laser driving circuit, and the second reference point will export the second reference signal, electricity Press output between the first reference point and the second reference point;Electric current determines will be according to the first ginseng at the second end of circuit 300 It examines signal and the second reference signal determines bias current.As it can be seen that can guarantee upper biasing circuit by using operational amplifier AMP 100 second end and the voltage of voltage output end are consistent, and then ensure that electric current can be replicated accurately, also can be accurately The bias current for checking default laser driving circuit, the technology for solving the bias current under more difficult monitoring fast state are asked Topic.
Further, second reference signal includes the first sub- reference signal and the second sub- reference signal, described inclined Circuits 100 include the first P-channel metal-oxide-semiconductor PM1, include the second N-channel MOS pipe NM2 and the in the below-center offset circuit 200 Three N-channel MOS pipe NM3;
The source electrode of the first P-channel metal-oxide-semiconductor PM1 is connect with the described first default power supply VDD;
The grid of the first P-channel metal-oxide-semiconductor PM1 and the first reference point in the default laser driving circuit connect It connects;
The first P-channel metal-oxide-semiconductor PM1 drain electrode respectively with the non-inverting input terminal of the operational amplifier AMP and institute State the drain electrode connection of the first N-channel MOS pipe NM1;
The source electrode of the first N-channel MOS pipe NM1 respectively with the drain electrode of the second N-channel MOS pipe NM2 and described Electric current determines the first end connection of circuit 300;
The grid of the second N-channel MOS pipe NM2, for obtaining described in the default laser driving circuit One sub- reference signal;
The source electrode of the second N-channel MOS pipe NM2 is connect with the drain electrode of the third N-channel MOS pipe NM3, the third The source electrode of N-channel MOS pipe NM3 is grounded;
The grid of the third N-channel MOS pipe NM3, for obtaining described in the default laser driving circuit Two sub- reference signals.
In the concrete realization, the first P-channel metal-oxide-semiconductor PM1 can from the first reference point of default laser driving circuit according to Total current is replicated according to preset ratio, the electric current in current monitoring circuit got after duplication can be denoted as the first proportional current I1; The second N-channel MOS pipe NM2 and third N-channel MOS pipe NM3 in below-center offset circuit 200 also will replicate tail according to preset ratio Electric current, the electric current in current monitoring circuit got after duplication can be denoted as the second proportional current I2.Wherein, which can It is 60.
It should be noted that the first sub- reference signal can be designated as I_down1, the second sub- reference signal can be designated as I_ Down2 can copy tail current I2 by the first sub- sub- reference signal I_down2 of reference signal I_down1 and second of collaboration.
Specifically, reference can be made to Fig. 3 is answered if the total current in the default laser driving circuit being replicated can be denoted as Ip Tail current in the default laser driving circuit of system can be denoted as In, preset the bias current Ibias in laser driving circuit =Ip-In.So, I1=1/60Ip, I2=1/60In are equivalent to and have been reduced 60 times, then can be according to the first proportional current I1 and the second proportional current I2 determines the bias current in default laser driving circuit, i.e. Ibias=(I1-I2) * 60. As it can be seen that in the present embodiment current monitoring will be carried out by reducing current ratio, power consumption is so substantially reduced.
As it can be seen that electric current determines the second end of circuit 300, can be used for according to the first reference signal, the first sub- reference signal with And second sub- reference signal determine the bias current of default laser driving circuit.
It should be understood that in view of presetting high speed VCSEL laser driving circuit often driving capability with higher, So can have very big driving current, if which results in current monitoring circuits to want to be accurately obtained current information often Power consumption with higher.For example, if current monitoring circuit presets high speed VCSEL according to conventional equal proportion current replication means The driving current of laser driving circuit is larger, and the power consumption at current monitoring circuit is also larger.It should be apparent, however, that passing through this reality The scaled down circuit supervision circuit for applying example description, can correspondingly reduce power consumption.
It further, include that the first driving circuit 401, second drives reference can be made to Fig. 3, in the default laser driving circuit Dynamic circuit 402 and switch SW;
The first end of first driving circuit 401 is connect with the second default power supply, first driving circuit 401 Second end connect with the first end of the switch SW, the of the second end of the switch SW and second driving circuit 402 One end connection;
The first end of first driving circuit 401 is connect with the grid of the first P-channel metal-oxide-semiconductor PM1;
The first end of the switch SW is connect with the inverting input terminal of the operational amplifier AMP;
The first end of second driving circuit 402 is connect with the grid of the second N-channel MOS pipe NM2, and described second The second end of driving circuit 402 is connect with the grid of the third N-channel MOS pipe NM3, and the of second driving circuit 402 Three ends ground connection.
It should be noted that the first driving circuit 401 and the second driving circuit 402 in Fig. 3 be reduced to current source into Row explanation, the monitoring process of current monitoring circuit is further explained.Having remembered in Fig. 3 has in default laser driving circuit Total current Ip, i.e. electric current at the first driving circuit 401;Tail current In in default laser driving circuit, i.e., second drives Electric current at dynamic circuit 402;Bias current Ibias, Ibias=Ip-In in default laser driving circuit.The bias current Ibias is that the electric current exported at circuit node B in switch SW closure, circuit node B is the second of the first driving circuit 401 The tie point at end and the first end of switch SW.
As it can be seen that the first end of the first driving circuit 401 is the first reference point in default laser driving circuit, it will be defeated First reference signal I_up out;The first end of second driving circuit 402 will export the first sub- reference signal I_down1, and second drives The second end of dynamic circuit 402 will export the second sub- reference signal I_down2.It is defeated as the voltage in default laser driving circuit Outlet can be circuit node B.
In addition, the tail current In in default laser driving circuit can be generated by common-source common-gate current mirror, specifically, Since there are the superpositions of two metal-oxide-semiconductors, two bias voltages will be generated, correspond to the first sub- reference signal I_down1 and second Sub- reference signal I_down2.
In addition, the first reference signal I_up, the first sub- reference signal I_down1, the second sub- reference signal I_down2 and The signal exported at voltage output end Vref is d. c. voltage signal.Moreover, the second default power supply herein can also be remembered For VDD, the second default power supply and the first default power supply are power supply, and difference name herein is only for difference electricity Road position.
Further, the electric current determines that circuit 300 includes the first current mirror 301 and the second current mirror 302;
The drain electrode of the second N-channel MOS pipe NM2 is connect with the first end of first current mirror 301, first electricity The second end of stream mirror 301 is connect with the source electrode of the third N-channel MOS pipe NM3;
The third end of first current mirror 301 is connect with the first end of second current mirror 302;
The second end of second current mirror 302, for determining the bias current of the default laser driving circuit.
In the concrete realization, current mirror at two will be introduced in the present embodiment, this allows for electric current often through measurement electricity It presses and measures, after all, voltage signal often is easier to measure than current signal.Moreover, by introducing current mirror at two, it is also convertible Sense of current, in order to measure.
Further, first current mirror 301 includes the 4th N-channel MOS pipe NM4, the 5th N-channel MOS pipe NM5, the Six N-channel MOS pipe NM6 and the 7th N-channel MOS pipe NM7;
The source electrode of the first N-channel MOS pipe NM1 respectively with the drain electrode of the second N-channel MOS pipe NM2, the described 4th The drain electrode of N-channel MOS pipe NM4 and grid connection;
The source electrode of the 4th N-channel MOS pipe NM4 respectively with the drain electrode of the 5th N-channel MOS pipe NM5 and grid Connection, the source electrode of the 5th N-channel MOS pipe NM5 are connect with the source electrode of the third N-channel MOS pipe NM3, the 5th N ditch The source electrode of road metal-oxide-semiconductor NM5 is grounded;
The grid of the 4th N-channel MOS pipe NM4 is connect with the grid of the 6th N-channel MOS pipe NM6, and the described 6th The drain electrode of N-channel MOS pipe NM6 is connect with the first end of second current mirror 302;
The source electrode of the 6th N-channel MOS pipe NM6 is connect with the drain electrode of the 7th N-channel MOS pipe NM7, and the described 7th The grid of N-channel MOS pipe NM7 is connect with the grid of the 5th N-channel MOS pipe NM5, the 7th N-channel MOS pipe NM7's Source electrode is connect with the source electrode of the 5th N-channel MOS pipe NM5.
In the concrete realization, for the first current mirror 301, the 4th N-channel MOS pipe NM4, the 5th N-channel MOS pipe NM5, 6th N-channel MOS pipe NM6 and the 7th N-channel MOS pipe NM7 forms into common-source common-gate current mirror, right branch by equal proportion from Left branch replica current.If the left branch current in common-source common-gate current mirror is denoted as I3, right branch current is denoted as I4, then I3= I4。
Further, second current mirror 302 includes the second P-channel metal-oxide-semiconductor PM2 and third P-channel metal-oxide-semiconductor PM3;
The third end of first current mirror 301 connects with the drain electrode of the second P-channel metal-oxide-semiconductor PM2 and grid respectively It connects, the grid of the second P-channel metal-oxide-semiconductor PM2 is connect with the grid of the third P-channel metal-oxide-semiconductor PM3;
The source electrode of the third P-channel metal-oxide-semiconductor PM3 respectively with the source electrode of the second P-channel metal-oxide-semiconductor PM2 and described First default power supply VDD connection;
The drain electrode of the third P-channel metal-oxide-semiconductor PM3, for according to first reference signal, the first son reference letter Number and the second sub- reference signal determine the bias current of the default laser driving circuit.
In the concrete realization, for the second current mirror 302, the left branch current of the second current mirror 302 can be denoted as I5, Right branch current is denoted as I6, then I5=I6.
It is understood that since I4 and I5 is in same branch, I4=I5.Then, I5 passes through the 2nd P ditch again POMS current mirror 302 equal proportion of i.e. the second current mirror that road metal-oxide-semiconductor PM2 and third P-channel metal-oxide-semiconductor PM3 is formed replicates, and obtains I6, so, I5=I6.So I3=I4, I4=I5, I5=I6.
It should be understood that I3=I1-I2, I3=I4, I4=I5, I5=I6, finally, I6=I1-I2 can be true by I6 Surely the bias current of default laser driving circuit.And for input quantity, input quantity will be the first reference signal I_up, first The sub- sub- reference signal I_down2 of reference signal I_down1 and second.
In addition, sense of current can be converted to by introducing the second current mirror 302 downwards, in order to measure.
Further, the electric current determines that circuit 300 further includes the 8th N-channel MOS pipe NM8;
The second end of second current mirror 302 connects with the drain electrode of the 8th N-channel MOS pipe NM8 and grid respectively It connects;
The source electrode of the 8th N-channel MOS pipe NM8, for determining the bias current of the default laser driving circuit.
It is understood that before obtaining I6 the 8th N-channel MOS pipe NM8 can be accessed by diode connection to protect Third P-channel metal-oxide-semiconductor PM3 avoids the source-drain voltage of third P-channel metal-oxide-semiconductor PM3 excessive and damages the third P-channel metal-oxide-semiconductor PM3。
Further, the current monitoring circuit further includes outer connecting resistance;
The source electrode of the 8th N-channel MOS pipe NM8 is connect with the first end of the outer connecting resistance;
The second end of the outer connecting resistance determines described default sharp for obtaining bias voltage according to the bias voltage The bias current of light device driving circuit.
It in the concrete realization, is microampere order in view of the electric current I6 of final output, direct externally measured electric current has certain difficult Degree, when current direction is downward, can measure bias voltage by the outer connecting resistance of known resistance to obtain the bias current.
The present invention also proposes a kind of laser application circuit, which includes current monitoring as described above Circuit, the specific structure of the current monitoring circuit is referring to above-described embodiment, since this laser application circuit uses above-mentioned institute There are whole technical solutions of embodiment, therefore at least all beneficial effects brought by the technical solution with above-described embodiment, This is no longer going to repeat them.
The default laser driving circuit is connect with the current monitoring circuit.
Specifically, default laser driving circuit can be default high speed VCSEL driving circuit, can be the VCSEL of array Driving circuit.In addition, the default high speed VCSEL driving circuit can be in high speed VCSEL driving chip.
It further, include that the first driving circuit 401, second drives reference can be made to Fig. 3, in the default laser driving circuit Dynamic circuit 402 and switch SW;
The first end of first driving circuit 401 is connect with the second default power supply, first driving circuit 401 Second end connect with the first end of the switch SW, the of the second end of the switch SW and second driving circuit 402 One end connection;
The first end of first driving circuit 401 is connect with the grid of the first P-channel metal-oxide-semiconductor PM1;
The first end of the switch SW is connect with the inverting input terminal of the operational amplifier AMP;
The first end of second driving circuit 402 is connect with the grid of the second N-channel MOS pipe NM2, and described second The second end of driving circuit 402 is connect with the grid of the third N-channel MOS pipe NM3, and the of second driving circuit 402 Three ends ground connection.
It should be noted that the total current Ip having in default laser driving circuit has been remembered in Fig. 3, i.e., the first driving electricity Electric current at road 401;Preset the tail current In in laser driving circuit, i.e. electric current at the second driving circuit 402;It is default to swash Bias current Ibias, Ibias=Ip-In in light device driving circuit.Bias current Ibias is the electricity in switch SW closure The electric current exported at circuit node B, circuit node B are the connection of the second end of the first driving circuit 401 and the first end of switch SW Point.
As it can be seen that the first end of the first driving circuit 401 is the first reference point in default laser driving circuit, it will be defeated First reference signal I_up out;The first end of second driving circuit 402 will export the first sub- reference signal I_down1, and second drives The second end of dynamic circuit 402 will export the second sub- reference signal I_down2.It is defeated as the voltage in default laser driving circuit Outlet can be circuit node B.
In addition, the first reference signal I_up, the first sub- reference signal I_down1, the second sub- reference signal I_down2 and The signal exported at voltage output end Vref is d. c. voltage signal.Moreover, the second default power supply herein can also be remembered For VDD, the second default power supply and the first default power supply are power supply, and difference name herein is only for difference electricity Road position.
The above is only a preferred embodiment of the present invention, is not intended to limit the scope of the invention, all to utilize this hair Equivalent structure or equivalent flow shift made by bright specification and accompanying drawing content is applied directly or indirectly in other relevant skills Art field, is included within the scope of the present invention.

Claims (10)

1. a kind of current monitoring circuit, which is characterized in that the current monitoring circuit include upper biasing circuit, below-center offset circuit, Operational amplifier, the first N-channel metal-oxide semiconductor fieldeffect transistor metal-oxide-semiconductor and electric current determine circuit;
The first end of the upper biasing circuit is connect with the first default power supply, the second end of the upper biasing circuit respectively with The drain electrode of the non-inverting input terminal of the operational amplifier and the first N-channel MOS pipe connects, and the of the upper biasing circuit Three ends are connect with the first reference point in default laser driving circuit, and first reference point is for exporting first with reference to letter Number;
The output end of the operational amplifier is connect with the grid of the first N-channel MOS pipe, the reverse phase of the operational amplifier Input terminal is connect with the voltage output end in the default laser driving circuit;
The source electrode of the first N-channel MOS pipe determines circuit with the first end of the below-center offset circuit and the electric current respectively First end connection, the below-center offset circuit second end ground connection;
The third end of the below-center offset circuit is connect with the second reference point in the default laser driving circuit, and described second Reference point for exporting the second reference signal, the voltage output end be in first reference point and second reference point it Between;
The electric current determines the second end of circuit, for determining institute according to first reference signal and second reference signal State the bias current of default laser driving circuit.
2. current monitoring circuit as described in claim 1, which is characterized in that second reference signal includes the first son reference Signal and the second sub- reference signal, the upper biasing circuit include the first P-channel metal-oxide-semiconductor, include the in the below-center offset circuit Two N-channel MOS pipes and third N-channel MOS pipe;
The source electrode of the first P-channel metal-oxide-semiconductor is connect with the described first default power supply;
The grid of the first P-channel metal-oxide-semiconductor is connect with the first reference point in the default laser driving circuit;
The first P-channel metal-oxide-semiconductor drain electrode respectively with the non-inverting input terminal of the operational amplifier and first N-channel The drain electrode of metal-oxide-semiconductor connects;
The source electrode of the first N-channel MOS pipe determines electricity with the drain electrode of the second N-channel MOS pipe and the electric current respectively The first end on road connects;
The grid of the second N-channel MOS pipe, for obtaining the first son reference in the default laser driving circuit Signal;
The source electrode of the second N-channel MOS pipe is connect with the drain electrode of the third N-channel MOS pipe, the third N-channel MOS pipe Source electrode ground connection;
The grid of the third N-channel MOS pipe, for obtaining the second son reference in the default laser driving circuit Signal.
3. current monitoring circuit as claimed in claim 2, which is characterized in that the electric current determines that circuit includes the first current mirror And second current mirror;
The drain electrode of the second N-channel MOS pipe is connect with the first end of first current mirror, and the second of first current mirror End is connect with the source electrode of the third N-channel MOS pipe;
The third end of first current mirror is connect with the first end of second current mirror;
The second end of second current mirror, for determining the bias current of the default laser driving circuit.
4. current monitoring circuit as claimed in claim 3, which is characterized in that first current mirror includes the 4th N-channel MOS Pipe, the 5th N-channel MOS pipe, the 6th N-channel MOS pipe and the 7th N-channel MOS pipe;
The source electrode of the first N-channel MOS pipe respectively with the drain electrode of the second N-channel MOS pipe, the 4th N-channel MOS pipe Drain electrode and grid connection;
The source electrode of the 4th N-channel MOS pipe is connect with the drain electrode of the 5th N-channel MOS pipe and grid respectively, and described The source electrode of five N-channel MOS pipes is connect with the source electrode of the third N-channel MOS pipe, and the source electrode of the 5th N-channel MOS pipe connects Ground;
The grid of the 4th N-channel MOS pipe is connect with the grid of the 6th N-channel MOS pipe, the 6th N-channel MOS pipe Drain electrode connect with the first end of second current mirror;
The source electrode of the 6th N-channel MOS pipe is connect with the drain electrode of the 7th N-channel MOS pipe, the 7th N-channel MOS pipe Grid connect with the grid of the 5th N-channel MOS pipe, the source electrode of the 7th N-channel MOS pipe and the 5th N-channel The source electrode of metal-oxide-semiconductor connects.
5. current monitoring circuit as claimed in claim 3, which is characterized in that second current mirror includes the second P-channel MOS Pipe and third P-channel metal-oxide-semiconductor;
The third end of first current mirror is connect with the drain electrode of the second P-channel metal-oxide-semiconductor and grid respectively, and described second The grid of P-channel metal-oxide-semiconductor is connect with the grid of the third P-channel metal-oxide-semiconductor;
The source electrode of the third P-channel metal-oxide-semiconductor is preset with the source electrode of the second P-channel metal-oxide-semiconductor and described first supply respectively Power supply connection;
The drain electrode of the third P-channel metal-oxide-semiconductor, for according to first reference signal, the first sub- reference signal and The second sub- reference signal determines the bias current of the default laser driving circuit.
6. current monitoring circuit as claimed in claim 3, which is characterized in that the electric current determines that circuit further includes the 8th N ditch Road metal-oxide-semiconductor;
The second end of second current mirror is connect with the drain electrode of the 8th N-channel MOS pipe and grid respectively;
The source electrode of the 8th N-channel MOS pipe, for determining the bias current of the default laser driving circuit.
7. current monitoring circuit as claimed in claim 6, which is characterized in that the current monitoring circuit further includes external electricity Resistance;
The source electrode of the 8th N-channel MOS pipe is connect with the first end of the outer connecting resistance;
The second end of the outer connecting resistance determines the default laser according to the bias voltage for obtaining bias voltage The bias current of driving circuit.
8. a kind of laser application circuit, which is characterized in that the laser application circuit includes default laser driving circuit With the current monitoring circuit as described in any one of claim 2 to 7;
The default laser driving circuit is connect with the current monitoring circuit.
9. laser application circuit as claimed in claim 8, which is characterized in that include in the default laser driving circuit First driving circuit, the second driving circuit and switch;
The first end of first driving circuit is connect with the second default power supply, the second end of first driving circuit with The first end of the switch connects, and the second end of the switch is connect with the first end of second driving circuit;
The first end of first driving circuit is connect with the grid of the first P-channel metal-oxide-semiconductor;
The first end of the switch is connect with the inverting input terminal of the operational amplifier;
The first end of second driving circuit is connect with the grid of the second N-channel MOS pipe, second driving circuit Second end is connect with the grid of the third N-channel MOS pipe, the third end ground connection of second driving circuit.
10. laser application circuit as claimed in claim 8, which is characterized in that the default laser driving circuit is pre- If high velocity vertical cavity surface emitting lasers driving circuit.
CN201910801031.XA 2019-08-27 2019-08-27 Current monitoring circuit and laser application circuit Active CN110456134B (en)

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