CN110444649A - 模拟太阳光的全光谱led光源封装方法及其封装结构 - Google Patents
模拟太阳光的全光谱led光源封装方法及其封装结构 Download PDFInfo
- Publication number
- CN110444649A CN110444649A CN201910760037.7A CN201910760037A CN110444649A CN 110444649 A CN110444649 A CN 110444649A CN 201910760037 A CN201910760037 A CN 201910760037A CN 110444649 A CN110444649 A CN 110444649A
- Authority
- CN
- China
- Prior art keywords
- powder
- quality
- chip
- wave band
- glue
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001228 spectrum Methods 0.000 title claims abstract description 27
- 238000000034 method Methods 0.000 title claims abstract description 13
- 238000005538 encapsulation Methods 0.000 title claims abstract description 11
- 239000000843 powder Substances 0.000 claims abstract description 48
- 241000218202 Coptis Species 0.000 claims abstract description 13
- 235000002991 Coptis groenlandica Nutrition 0.000 claims abstract description 13
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 10
- 238000004020 luminiscence type Methods 0.000 claims abstract description 3
- 239000003292 glue Substances 0.000 claims description 31
- 239000012296 anti-solvent Substances 0.000 claims description 8
- 238000001556 precipitation Methods 0.000 claims description 8
- 238000004806 packaging method and process Methods 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 239000004568 cement Substances 0.000 claims description 3
- 239000000741 silica gel Substances 0.000 claims description 3
- 229910002027 silica gel Inorganic materials 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 abstract description 11
- 238000005286 illumination Methods 0.000 abstract description 5
- 238000009877 rendering Methods 0.000 abstract description 5
- 230000000258 photobiological effect Effects 0.000 abstract description 3
- 238000004088 simulation Methods 0.000 abstract description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000005284 excitation Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000005543 nano-size silicon particle Substances 0.000 description 2
- 230000001376 precipitating effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 235000005976 Citrus sinensis Nutrition 0.000 description 1
- 240000002319 Citrus sinensis Species 0.000 description 1
- 241000083879 Polyommatus icarus Species 0.000 description 1
- 206010057430 Retinal injury Diseases 0.000 description 1
- IRERQBUNZFJFGC-UHFFFAOYSA-L azure blue Chemical compound [Na+].[Na+].[Na+].[Na+].[Na+].[Na+].[Na+].[Na+].[Al+3].[Al+3].[Al+3].[Al+3].[Al+3].[Al+3].[S-]S[S-].[O-][Si]([O-])([O-])[O-].[O-][Si]([O-])([O-])[O-].[O-][Si]([O-])([O-])[O-].[O-][Si]([O-])([O-])[O-].[O-][Si]([O-])([O-])[O-].[O-][Si]([O-])([O-])[O-] IRERQBUNZFJFGC-UHFFFAOYSA-L 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Abstract
模拟太阳光的全光谱LED光源封装方法及其封装结构,通过双波晶片激发宽谱荧光粉,在LED发光单元固定一个峰值波长440‑442.5nm的短波段蓝色芯片和一个峰值波长457.5‑460nm的长波段蓝色芯片,两个蓝光晶片通过金线串联,正装固晶。本发明采用双波晶片激发宽谱荧光粉技术,实现高度模拟太阳光谱的全光谱LED光源,光源显色指数98以上,R1‑R15均达到98以上,满足了消费者对光生物安全和健康照明方面的更高要求,具有成本低、发光自然和感光舒适的优点。
Description
技术领域
本发明涉及LED照明技术领域,具体涉及一种模拟太阳光的全光谱LED光源封装方法及其封装结构。
背景技术
随着LED照明技术的发展,人们对于光生物安全、健康照明等方面提出了更高的要求。人眼最习惯的光照是太阳光,所以人造光源的光谱越接近太阳光,人眼对于颜色的感觉越自然,越舒适。白光LED作为第四代照明光源,它具有固体化、体积小、发热量低、耗电量小、寿命长、反应速度快和环保等优点,预计未来会被广泛应用于普通照明和背光光源等领域。特别是白光LED照明,由于符合绿色照明工程节能与环保的要求,未来预计会被广泛应用。但是半导体LED的发光原理决定了它只能是单色光,而太阳可见光是由红橙黄绿青蓝紫颜色组成的多彩光谱,显然只有单色的半导体LED光源并不适合在普通的照明领域使用。半导体LED光源要进入普通照明领域就必须通过其他技术的运用来改变其单色发光的缺陷。白光LED技术就是对LED单色光进行改造的典型代表,其目的是使LED光源接近自然日光色从而可用于普通照明领域。
目前全光谱LED光源主要有:单波蓝光晶片激发红黄蓝荧光粉、紫光晶片激发红黄绿荧光粉技术。单波蓝光晶片激发红黄蓝荧光粉技术,这种光源的光谱在蓝绿波段有较明显的沟壑,难以达到太阳光谱的连续性,由于光谱部分缺失,显色指数98已是极限;另一种是紫光晶片激发红黄绿荧光粉技术,这种封装技术可以实现光谱的高度连续性,显色指数98以上,但是紫外晶片成本过高,是普通蓝光晶片的几十倍,导致这类全光谱LED光源的价格偏高。另外因紫外晶片能量过高,会增加高能低波段对于视网膜损伤的风险。
发明内容
本发明提供了一种模拟太阳光的全光谱LED光源封装方法及其封装结构,以解决现有技术存在的难以达到太阳光谱的连续性以及成本高的问题。
本发明解决其技术问题所采用技术方案是:
一种模拟太阳光的全光谱LED光源封装方法,通过双波晶片激发宽谱荧光粉,在LED发光单元固定一个峰值波长440-442.5nm的短波段蓝色芯片和一个峰值波长457.5-460nm的长波段蓝色芯片,两个蓝光晶片通过金线串联,正装固晶,双波蓝光晶片激发的荧光粉包括峰值波长490nm的绿色荧光粉(x=0.079±0.003,y=0.481±0.003);峰值波长为518nm(x=0.3328±0.003,y=0.5782±0.003)的黄绿粉;峰值波长为525nm(x=0.347±0.003,y=0.575±0.003)的黄绿粉;峰值波长为535nm(x=0.3774±0.003,y=0.5668±0.003)的黄绿粉以及峰值波长为660nm(x=0.6763±0.003,y=0.0.3235±0.003)的红色荧光粉,这五种荧光粉通过硅胶调和为荧光胶,调和成的荧光胶水中,490nm的绿色荧光粉的质量为胶水质量的3.4%-3.5%,518nm的黄绿荧光粉的质量为胶水质量的2.7%-2.8%,525nm的黄绿荧光粉的质量为胶水质量的6.4%-6.5%,535nm的黄绿荧光粉的质量为胶水质量的6.5%-6.6%,660nm的红色荧光粉的质量为胶水质量的1.5%-1.6%。
上述荧光胶水中加入抗沉淀粉,抗沉淀粉的质量为胶水质量的0.7%-0.8%,以保证量产稳定性,抗沉淀粉成份为纳米硅,是一种人工合成亲水型的无定形二氧化硅,主要用于LED之调配荧光粉和防止荧光粉沉淀。
采用上述封装方法制成的模拟太阳光的全光谱LED光源封装结构,长波段蓝光晶片与短波段蓝光晶片通过绝缘胶串联固定于LED支架上,短波段蓝光晶片正极通过金线与支架正极连接,短波段蓝光晶片负极通过金线与长波段蓝光晶片正极连接,长波段蓝光晶片正极通过金线与支架负极连接,LED支架碗杯内布满荧光胶。
本发明采用双波晶片激发宽谱荧光粉技术,实现高度模拟太阳光谱的全光谱LED光源,光源显色指数98以上,R1-R15均达到98以上,满足了消费者对光生物安全和健康照明方面的更高要求,具有成本低、发光自然和感光舒适的优点。
附图说明
下面结合附图和实施例对本发明进一步说明。
图1是本发明LED光源装置的封装结构示意图;
图2是本发明LED光源的光谱图。
图中1 LED支架、2长波段蓝光晶片、3短波段蓝光晶片、4晶片正极、5晶片负极、6金线、7荧光胶。
具体实施方式
一种模拟太阳光的全光谱LED光源封装方法,通过双波晶片激发宽谱荧光粉,在LED发光单元固定一个峰值波长440-442.5nm的短波段蓝色芯片和一个峰值波长457.5-460nm的长波段蓝色芯片,两个蓝光晶片通过金线串联,正装固晶,双波蓝光晶片激发的荧光粉包括峰值波长490nm的绿色荧光粉(x=0.079±0.003,y=0.481±0.003);峰值波长为518nm(x=0.3328±0.003,y=0.5782±0.003)的黄绿粉;峰值波长为525nm(x=0.347±0.003,y=0.575±0.003)的黄绿粉;峰值波长为535nm(x=0.3774±0.003,y=0.5668±0.003)的黄绿粉以及峰值波长为660nm(x=0.6763±0.003,y=0.0.3235±0.003)的红色荧光粉,这五种荧光粉通过硅胶调和为荧光胶,调和成的荧光胶水中,490nm的绿色荧光粉的质量为胶水质量的3.4%-3.5%,518nm的黄绿荧光粉的质量为胶水质量的2.7%-2.8%,525nm的黄绿荧光粉的质量为胶水质量的6.4%-6.5%,535nm的黄绿荧光粉的质量为胶水质量的6.5%-6.6%,660nm的红色荧光粉的质量为胶水质量的1.5%-1.6%。
上述荧光胶水中加入抗沉淀粉,抗沉淀粉的质量为胶水质量的0.7%-0.8%,以保证量产稳定性,抗沉淀粉成份为纳米硅,是一种人工合成亲水型的无定形二氧化硅,主要用于LED之调配荧光粉和防止荧光粉沉淀。
采用上述封装方法制成的模拟太阳光的全光谱LED光源封装结构,如图1所述,长波段蓝光晶片2与短波段蓝光晶片3通过绝缘胶串联固定于LED支架1上,短波段蓝光晶片的晶片正极4通过金线6与支架正极连接,短波段蓝光晶片的晶片负极5通过金线6与长波段蓝光晶片正极连接,长波段蓝光晶片正极通过金线与支架负极连接,LED支架碗杯内布满荧光胶7。
如图2所示,通过本发明封装技术制成的高度模拟太阳光谱的全光谱LED光源,光源显色指数98以上,R1-R15均达到98以上。
Claims (3)
1.一种模拟太阳光的全光谱LED光源封装方法,其特征是通过双波晶片激发宽谱荧光粉,在LED发光单元固定一个峰值波长440-442.5nm的短波段蓝色芯片和一个峰值波长457.5-460nm的长波段蓝色芯片,两个蓝光晶片通过金线串联,正装固晶,双波蓝光晶片激发的荧光粉包括峰值波长490nm的绿色荧光粉(x=0.079±0.003,y=0.481±0.003);峰值波长为518nm(x=0.3328±0.003,y=0.5782±0.003)的黄绿粉;峰值波长为525nm(x=0.347±0.003,y=0.575±0.003)的黄绿粉;峰值波长为535nm(x=0.3774±0.003,y=0.5668±0.003)的黄绿粉以及峰值波长为660nm(x=0.6763±0.003,y=0.0.3235±0.003)的红色荧光粉,这五种荧光粉通过硅胶调和为荧光胶,调和成的荧光胶水中,490nm的绿色荧光粉的质量为胶水质量的3.4%-3.5%,518nm的黄绿荧光粉的质量为胶水质量的2.7%-2.8%,525nm的黄绿荧光粉的质量为胶水质量的6.4%-6.5%,535nm的黄绿荧光粉的质量为胶水质量的6.5%-6.6%,660nm的红色荧光粉的质量为胶水质量的1.5%-1.6%。
2.根据权利要求1所述的模拟太阳光的全光谱LED光源封装方法,其特征是荧光胶水中加入抗沉淀粉,抗沉淀粉的质量为胶水质量的0.7%-0.8%。
3.采用权利要求1或2封装方法制成的模拟太阳光的全光谱LED光源封装结构,其特征是长波段蓝光晶片与短波段蓝光晶片通过绝缘胶串联固定于LED支架上,短波段蓝光晶片正极通过金线与支架正极连接,短波段蓝光晶片负极通过金线与长波段蓝光晶片正极连接,长波段蓝光晶片正极通过金线与支架负极连接,LED支架碗杯内布满荧光胶。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201910760037.7A CN110444649A (zh) | 2019-08-16 | 2019-08-16 | 模拟太阳光的全光谱led光源封装方法及其封装结构 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201910760037.7A CN110444649A (zh) | 2019-08-16 | 2019-08-16 | 模拟太阳光的全光谱led光源封装方法及其封装结构 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN110444649A true CN110444649A (zh) | 2019-11-12 |
Family
ID=68436085
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201910760037.7A Pending CN110444649A (zh) | 2019-08-16 | 2019-08-16 | 模拟太阳光的全光谱led光源封装方法及其封装结构 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN110444649A (zh) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111828851A (zh) * | 2020-08-13 | 2020-10-27 | 北京泊菲莱科技有限公司 | 一种能够模拟标准光源的led集成灯珠及光谱调节适配方法 |
CN112786575A (zh) * | 2020-12-30 | 2021-05-11 | 广州硅能照明有限公司 | 一种全光谱led光源 |
CN113540315A (zh) * | 2021-06-11 | 2021-10-22 | 东莞市立德达光电科技有限公司 | 一种植物照明led封装方法 |
CN113540321A (zh) * | 2021-05-27 | 2021-10-22 | 东莞市立德达光电科技有限公司 | 一种高光色品质的白光led封装方法 |
CN113540322A (zh) * | 2021-06-03 | 2021-10-22 | 东莞市立德达光电科技有限公司 | 一种摄影补光灯led封装方法 |
CN116751585A (zh) * | 2023-06-25 | 2023-09-15 | 江苏博睿光电股份有限公司 | 一种荧光粉组合物以及led器件 |
CN117558723A (zh) * | 2024-01-12 | 2024-02-13 | 广东华辉煌光电科技有限公司 | 一种多波峰连续全光谱护眼光源及其制造方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN205828382U (zh) * | 2016-06-03 | 2016-12-21 | 易美芯光(北京)科技有限公司 | 一种多芯片激发的led全光谱器件 |
CN205944086U (zh) * | 2016-07-28 | 2017-02-08 | 长春希达电子技术有限公司 | 一种自然光谱led光源 |
CN106784235A (zh) * | 2016-11-05 | 2017-05-31 | 杨华琼 | 一种特种光谱的发光二极管及其应用 |
CN109216529A (zh) * | 2018-10-19 | 2019-01-15 | 王斌 | 一种自然光或太阳光光谱的led光源 |
-
2019
- 2019-08-16 CN CN201910760037.7A patent/CN110444649A/zh active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN205828382U (zh) * | 2016-06-03 | 2016-12-21 | 易美芯光(北京)科技有限公司 | 一种多芯片激发的led全光谱器件 |
CN205944086U (zh) * | 2016-07-28 | 2017-02-08 | 长春希达电子技术有限公司 | 一种自然光谱led光源 |
CN106784235A (zh) * | 2016-11-05 | 2017-05-31 | 杨华琼 | 一种特种光谱的发光二极管及其应用 |
CN109216529A (zh) * | 2018-10-19 | 2019-01-15 | 王斌 | 一种自然光或太阳光光谱的led光源 |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111828851A (zh) * | 2020-08-13 | 2020-10-27 | 北京泊菲莱科技有限公司 | 一种能够模拟标准光源的led集成灯珠及光谱调节适配方法 |
CN112786575A (zh) * | 2020-12-30 | 2021-05-11 | 广州硅能照明有限公司 | 一种全光谱led光源 |
CN113540321A (zh) * | 2021-05-27 | 2021-10-22 | 东莞市立德达光电科技有限公司 | 一种高光色品质的白光led封装方法 |
CN113540322A (zh) * | 2021-06-03 | 2021-10-22 | 东莞市立德达光电科技有限公司 | 一种摄影补光灯led封装方法 |
CN113540315A (zh) * | 2021-06-11 | 2021-10-22 | 东莞市立德达光电科技有限公司 | 一种植物照明led封装方法 |
CN116751585A (zh) * | 2023-06-25 | 2023-09-15 | 江苏博睿光电股份有限公司 | 一种荧光粉组合物以及led器件 |
CN117558723A (zh) * | 2024-01-12 | 2024-02-13 | 广东华辉煌光电科技有限公司 | 一种多波峰连续全光谱护眼光源及其制造方法 |
CN117558723B (zh) * | 2024-01-12 | 2024-03-29 | 广东华辉煌光电科技有限公司 | 一种多波峰连续全光谱护眼光源及其制造方法 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN110444649A (zh) | 模拟太阳光的全光谱led光源封装方法及其封装结构 | |
CN107565006B (zh) | 一种具有日光可见光部分光谱结构的led光源及灯具 | |
CN201225532Y (zh) | 功率型白光发光二极管 | |
US8044410B2 (en) | White light-emitting diode and its light conversion layer | |
CN101872825B (zh) | 制备低色温高显色性大功率白光led的方法 | |
CN107706282A (zh) | 能同时满足植物生长和人眼需求的led生态光源的生成方法 | |
CN104011457A (zh) | 白色光源以及包括所述白色光源的白色光源系统 | |
CN102352970A (zh) | 一种新型led光源及其照明装置 | |
CN101661987A (zh) | 一种白光led封装结构及其封装方法 | |
CN110137164A (zh) | 一种实现低蓝光危害的类太阳光谱白光的方法及白光led | |
CN111180428A (zh) | 一种含紫光或近紫外芯片的光谱调光封装结构及其制作方法 | |
CN208538852U (zh) | 一种led芯片的封装产品 | |
CN104241494A (zh) | 可调节低色温高显色性大功率白光led新方法 | |
CN102637808A (zh) | 一种白光led封装结构 | |
CN109256458A (zh) | 一种led产品封装结构及其封装方法 | |
CN113078250A (zh) | 一种仿自然光全光谱led光源及其制作方法 | |
CN102454945A (zh) | 一种获得高显色性暖白光的方法及其封装结构 | |
CN110880494A (zh) | 一种全光谱led灯珠 | |
CN107654864A (zh) | 一种具有ofed结构的光源体及其在照明中的应用 | |
CN107248511B (zh) | 一种具有低司辰节律因子的三基色白光led | |
CN109888073A (zh) | 一种全光谱led封装方法 | |
CN110364517A (zh) | 一种三合一全光谱led贴片光源 | |
CN205944086U (zh) | 一种自然光谱led光源 | |
CN115472601A (zh) | 多波段芯片搭配特殊基板实现多色温广角全光谱白光光源 | |
WO2020000512A1 (zh) | 一种准自然光led光源的优化方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
RJ01 | Rejection of invention patent application after publication | ||
RJ01 | Rejection of invention patent application after publication |
Application publication date: 20191112 |