CN110444612B - Multilayer dielectric composite structure for increasing response bandwidth of terahertz detector - Google Patents
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- 239000002131 composite material Substances 0.000 title claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 86
- 239000000853 adhesive Substances 0.000 claims abstract description 11
- 230000001070 adhesive effect Effects 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 238000000034 method Methods 0.000 abstract description 4
- 230000005540 biological transmission Effects 0.000 abstract description 3
- 238000002360 preparation method Methods 0.000 abstract description 3
- 238000001514 detection method Methods 0.000 abstract description 2
- 238000003466 welding Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 52
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 238000004088 simulation Methods 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
- 239000002356 single layer Substances 0.000 description 5
- 238000013461 design Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000000411 transmission spectrum Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000011160 research Methods 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
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Abstract
The invention discloses a multilayer medium composite structure for increasing response bandwidth of a terahertz detector, which comprises a chip substrate and a plurality of medium layers arranged on the back surface of the chip substrate, wherein substrate pairs are arranged between the chip substrate and adjacent medium layers and between two adjacent medium layers, cavities are formed between the chip substrate and the adjacent medium layers and between the chip substrate and the two adjacent medium layers, and the substrate pairs are connected with the chip substrate or the medium layers through adhesive agents. The multilayer dielectric composite structure increases the frequency bandwidth of transmission signals under the condition of keeping high transmissivity, has simple preparation process and low cost, is compatible with a flip-chip welding process, lays a foundation for preparing a terahertz detector with high detection efficiency and working in a broadband, and has great practical significance and application prospect in the technical field of terahertz.
Description
Technical Field
The invention relates to a terahertz technology, in particular to a multilayer dielectric composite structure for increasing response bandwidth of a terahertz detector.
Background
The response bandwidth is one of important parameters of the terahertz detector, the working frequency range of the detector is determined, and the increase of the response bandwidth of the detector has great practical significance.
A Distributed Bragg Reflector (DBR) is a typical structure for increasing the response bandwidth of a detector, and is formed by combining and arranging a plurality of layers of materials with different dielectric constants according to a certain sequence, so that a signal can be reflected by nearly 100% in a wide frequency range, and the response bandwidth of the detector is effectively increased. However, for terahertz signals, the wavelength is long (30 to 3000 micrometers), and it is difficult to prepare a DBR structure in terms of process.
In addition, the substrate structure restricts and limits the response bandwidth of the detector to a great extent, and researches prove that the super-surface structure or the silicon grating step structure designed on the chip substrate can perform multiple interference and diffraction on terahertz signals, so that the response bandwidth of the whole sample is effectively increased. Although dielectric lenses and diffractive lenses can effectively eliminate the substrate interference effect, they are also commonly used to increase the response bandwidth of the detector, but the structure is complex in manufacturing process and high in cost.
Disclosure of Invention
The invention aims to provide a multilayer dielectric composite structure for increasing response bandwidth of a terahertz detector.
The technical solution for realizing the purpose of the invention is as follows: a multilayer medium composite structure for increasing response bandwidth of a terahertz detector comprises a chip substrate and a plurality of medium layers arranged on the back of the chip substrate, substrate pairs are arranged between the chip substrate and adjacent medium layers and between the chip substrate and the adjacent medium layers, cavities are formed between the chip substrate and the adjacent medium layers and between the chip substrate and the adjacent medium layers, and the substrate pairs are connected with the chip substrate or the medium layers through adhesive patches.
As a specific implementation manner, the cavity between the chip substrate and the adjacent dielectric layer and between the chip substrate and the adjacent dielectric layer is vacuum.
As a specific implementation manner, the cavity between the chip substrate and the adjacent dielectric layer and between the two adjacent dielectric layers is filled with air.
In a specific implementation mode, when the multilayer dielectric composite structure is combined with a terahertz detector, the detector is arranged on the surface of a chip substrate.
As a specific embodiment, the substrate thickness L of the multilayer dielectric composite structuren+1Dielectric layer thickness hn+1And the thickness h of the chip substrate0The following relationships are required:
in the above formulan+1The relative dielectric constants of the chip substrate and the (n + 1) th dielectric layer are respectively, k is a non-zero natural number, and lambda is the wavelength of an incident signal.
As a specific implementation manner, the chip substrate, the substrate and the dielectric layer are made of high-resistance silicon.
As a more specific embodiment, the chip substrate, the substrate and the dielectric layer have resistivity rho>1000. omega. cm, a dielectric constant ofSi＝11.7。
Compared with the prior art, the invention has the remarkable advantages that: 1) the multilayer dielectric composite structure increases the frequency bandwidth of a transmission signal under the condition of keeping high transmissivity (more than 80%); 2) the multilayer dielectric composite structure is simple in preparation process, low in cost and compatible with a flip-chip welding process, lays a foundation for preparing a terahertz detector with high detection efficiency and working in a wide frequency band, and has great practical significance and application prospects in the technical field of terahertz.
Drawings
FIG. 1 is a schematic representation of a multilayer dielectric composite structure of the present invention.
FIG. 2 shows that when silicon dielectric layers 1,2 and 3 are sequentially added on the back (left side) of a chip substrate 0, a terahertz signal is incident on the back side, and a device position E is arranged on the surface of the substrate2The simulation result diagram of (1).
FIG. 3 is a Nb with integrated planar helical antenna5N6Terahertz detector structure chart.
FIG. 4 shows Nb in the case of a single-layer chip substrate and multi-layer dielectric composite structure5N6And (3) a test result graph of the voltage response rate (Ro) of the terahertz detector.
Detailed Description
The invention is further illustrated by the following examples in conjunction with the accompanying drawings. In the description of the present invention, the terms "upper", "lower", "left", "right", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of describing the present invention and do not require that the present invention must be patterned and operated in a specific orientation, and thus, are not to be construed as limiting the present invention.
As shown in fig. 1, the multilayer dielectric composite structure for increasing response bandwidth of a terahertz detector comprises: a chip substrate 0, a dielectric layer n (n is 1, 2.) added on the back of the chip substrate, and the distance between the dielectric layer n +1 and the dielectric layer n (or the chip substrate 0) is Ln+1(ii) a The thickness L is used at the two side edges between the dielectric layer n +1 and the dielectric layer n (or the chip substrate 0)n+1The substrate is used for fixing the structure, and a sticky patch p (the thickness of which is far less than that of the substrate and can be ignored) is used for sticking the substrate and the dielectric layer (or the chip substrate 0) so as to ensure that the distance between the dielectric layer n +1 and the dielectric layer n (or the chip substrate 0) is Ln+1The region between the dielectric layers (and the dielectric layer 1 and the chip substrate 0) except the substrate, i.e. the enclosed cavity, may be in the form of vacuum or air filling.
The multilayer dielectric composite structure is combined with a terahertz detector, and the detector is designed at the position of the surface S of the chip substrate 0. The terahertz signal is incident from the back (left side) of the structure, and the substrate thickness L is used for enabling the signal passing through the multilayer medium to be strongest (namely, reflection is minimum)n+1Dielectric layer thickness hn+1And the thickness h of the chip substrate0The following relationships are required:
in the above formulan+1The relative dielectric constants of the chip substrate and the (n + 1) th dielectric layer are respectively, k is a non-zero natural number, and lambda is the wavelength of an incident signal.
Considering the advantages of low cost, mature processing technology conditions and the like, the materials of the chip substrate, the substrate and the dielectric layer are all selected from high-resistance silicon (resistivity rho)>1000. omega. cm) having a dielectric constant ofSi＝11.7。、
The multilayer dielectric composite structure utilizes the thicknesses of the chip substrate, the vacuum (or air) region and the dielectric layer to adjust the phases of terahertz signals with different frequencies at the S position, aiming at a certain working frequency range of the terahertz detector, when the number of dielectric layers is increased, a plurality of overlapped resonance peaks appear in the transmission spectrum of the structure, so that the bandwidth of the transmission signal is increased, and the bandwidth of the structure can be maximized by adjusting and optimizing the number of dielectric layers and the thickness of the vacuum (or air) region. When the number of dielectric layers is further increased, a plurality of resonance peaks (overlapped resonance peaks are separated) appear in the transmission spectrum of the signal, resulting in a reduction in the bandwidth of the structure.
Examples
In order to verify the effectiveness of the scheme of the invention, a structure is simulated and designed by using a Finite Difference Time Domain (FDTD) method aiming at a signal with the frequency of 0.6-0.7THz, and the electric field intensity (E) at the position S of a device is monitored2)。
When the structure is only the chip substrate 0, the thickness of the chip substrate is selected to be h so that the resonance peak of the structure falls within the frequency range of 0.6-0.7THz0340 microns. It E2The simulation results of (2) are shown as a gray curve 0 in FIG. 2, at a frequency of 0.645THz, the E thereof2Has a value of 0.933 at most and a frequency E in the range of 0.6336-0.656THz2The values are all larger than 0.8, and the corresponding frequency band bandwidth is 22.4GHz, (the ratio of the frequency band bandwidth is (0.656-0.6336)/(0.7-0.6) ═ 22.4%); when the first dielectric layer 1 is added, a thickness L is used at the edge position1Substrate m of1The dielectric layer 1 is separated from the chip substrate 0 while the base sheet m is bonded with the adhesive sheet p1Is adhered to the dielectric layer 1 and the chip substrate 0, and the thickness of the adhesive p is far less than that of the adhesive L1And is negligible. Likewise, L is selected so that the resonant peak of the structure falls within the frequency range of 0.6-0.7THz1350 μm, h1200 microns. It E2The simulation results are shown as a gray dashed line 0+1 in FIG. 2, and the results are significantly changed, where the frequencies are 0.6THz and 0.7THz, and the E is2The intensity values are significantly reduced, from 0.33 to 0.07 and 0.28 to 0.05 respectively, however, E is in the frequency range 0.6326-0.657THz2The values are all larger than 0.8, and the corresponding frequency bandThe width is 24.4 GHz; when the second dielectric layer 2 is further added, the thickness L is also used at the edge position2Substrate m of2Separating the medium layer 2 from the medium layer 1, and bonding the substrate m with the adhesive agent p2And the adhesive is adhered to the medium layer 2 and the medium layer 1. Also to allow the resonant peak of the structure to fall within the 0.6-0.7THz frequency range and to simplify the structural design and analysis, L is selected2＝L1350 μm, h2＝h1200 microns. It E2The simulation results are shown in FIG. 2 as the black curve 0+1+22The frequency range corresponding to the value greater than 0.8 is 0.6271-0.6626THz, and the bandwidth of the frequency band is 35.5GHz (the bandwidth ratio of the frequency band is (0.6626-0.6271)/(0.7-0.6) ═ 35.5%). When the addition of the third dielectric layer 3 is continued, a thickness L is also used at the edge position thereof3Substrate m of3Separating the medium layer 3 from the medium layer 2, and bonding the substrate m with the adhesive agent p3And is adhered to the medium layer 3 and the medium layer 2. Also to allow the resonant peak of the structure to fall within the 0.6-0.7THz frequency range and to simplify the structural design and analysis, L is selected3＝L2＝L1350 μm, h3＝h2＝h1200 microns. It E2The simulation result of (2) is shown by a black dot dashed line 0+1+3 in fig. 2. The curve shows three distinct peaks, E at frequencies 0.6298THz and 0.66THz2The intensity of the first dielectric layer is reduced to 0.73 and 0.71, so that the above simulation results show that the optimized result in the embodiment is a composite structure with two dielectric layers added on the back surface of the chip substrate, and compared with the case of only the chip substrate, the frequency band bandwidth is increased by 13.1%.
In order to verify the design result, the multi-layer medium composite structure is applied to Nb by utilizing a micro-processing technology5N6In the preparation of the terahertz detector, and compared with the case of a single-layer chip substrate. The thickness of the high-resistance silicon substrate is 340 micrometers, the thickness of the silicon medium layer is 200 micrometers, the thickness of the silicon substrate layer is 350 micrometers, and the adhesive p is photoresist AZ1500, and the thickness of the adhesive p is less than 1 micrometer. Nb integrated with planar helical antenna5N6The terahertz detector is structurally shown in fig. 3, and the size parameters are as follows: t 1.125, g 12 μm, w13 μm, w3＝w45 μm, w5＝w612 μm, S 160 microns and S 280 microns grid area in fig. 3 (g × w)1) Is Nb5N6The location of the membrane. The terminals of the left side and the right side connecting line are respectively connected with an electrode 1 and an electrode 2. Nb in the case of a multilayer dielectric composite structure and a single-layer chip substrate5N6The test result of the voltage responsivity (Ro) of the terahertz detector is shown in fig. 4. For Nb prepared on single-layer chip substrate5N6For the terahertz detector, the test result is shown by a gray chain line, the tested signal frequency range is 0.613-0.684THz, and the Ro value is maximum 90V/W at 0.6444 THz. The ratio of the response bandwidth corresponding to the Ro intensity being greater than 0.8 to the test frequency range is 2.7%. However, for Nb prepared on multilayer dielectric composite structures5N6For the terahertz detector, the test result is shown by a black dot-and-dash line in fig. 4, and the Ro value is 87.5V/W at 0.6509THz at most. The ratio of response bandwidth corresponding to Ro intensity greater than 0.8 to the test frequency range is 12.5%, compared with Nb on a single-layer chip substrate5N6For the terahertz detector, the response width is increased by 9.8%, and the response bandwidth of the terahertz detector is effectively increased by the multilayer medium composite structure.
Claims (5)
1. The multilayer dielectric composite structure is used for increasing response bandwidth of the terahertz detector and is characterized by comprising a chip substrate and a plurality of dielectric layers arranged on the back surface of the chip substrate, wherein substrate pairs are arranged between the chip substrate and the adjacent dielectric layers and between the two adjacent dielectric layers, cavities are formed between the chip substrate and the adjacent dielectric layers and between the chip substrate and the two adjacent dielectric layers, and the substrate pairs are connected with the chip substrate or the dielectric layers through adhesive; and the cavity between the chip substrate and the adjacent dielectric layers and between the chip substrate and the adjacent dielectric layers is vacuum or filled with air.
2. The multilayer dielectric composite structure of claim 1, in combination with a terahertz detector disposed at a surface of a chip substrate.
3. The multilayer dielectric composite structure of claim 1, wherein the multilayer dielectric composite structure has a substrate thickness Ln+1Dielectric layer thickness hn+1And the thickness h of the chip substrate0The following relationships are required:
in the above formulan+1The relative dielectric constants of the chip substrate and the (n + 1) th dielectric layer are respectively, k is a non-zero natural number, and lambda is the wavelength of an incident signal.
4. The multi-layer dielectric composite structure of claim 1, wherein the chip substrate, the substrate and the dielectric layer are made of high-resistivity silicon.
5. The multi-layer dielectric composite structure of claim 3, wherein the chip substrate, the base sheet, and the dielectric layer have a resistivity p>1000. omega. cm, a dielectric constant ofSi＝11.7。
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| PCT/CN2020/102905 WO2021013111A1 (en) | 2019-07-22 | 2020-07-20 | Multi-layer dielectric composite structure for increasing response bandwidth of terahertz detector |
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| CN103367473A (en) * | 2012-03-31 | 2013-10-23 | 中国科学院上海微系统与信息技术研究所 | Metal microcavity optical coupling terahertz quantum well photon detector |
| CN103715291A (en) * | 2013-12-30 | 2014-04-09 | 中国科学院上海微系统与信息技术研究所 | Terahertz photoelectric detector |
| CN109830546A (en) * | 2019-03-05 | 2019-05-31 | 金华伏安光电科技有限公司 | A kind of sub- terahertz wave detector enhancing fuel factor |
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| CN103135260B (en) * | 2013-03-12 | 2015-02-25 | 中国计量学院 | Light-controlled TeraHertz wave switch |
| CN106099263B (en) * | 2016-05-25 | 2019-03-05 | 哈尔滨工程大学 | A kind of THz wave filter based on forbidden band interaction |
| CN107064052B (en) * | 2017-04-26 | 2019-12-27 | 中国计量大学 | Terahertz fingerprint detection sensitivity enhancement method based on microcavity resonance mode |
| CN110444612B (en) * | 2019-07-22 | 2020-09-01 | 南京大学 | Multilayer dielectric composite structure for increasing response bandwidth of terahertz detector |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103367473A (en) * | 2012-03-31 | 2013-10-23 | 中国科学院上海微系统与信息技术研究所 | Metal microcavity optical coupling terahertz quantum well photon detector |
| CN103715291A (en) * | 2013-12-30 | 2014-04-09 | 中国科学院上海微系统与信息技术研究所 | Terahertz photoelectric detector |
| CN109830546A (en) * | 2019-03-05 | 2019-05-31 | 金华伏安光电科技有限公司 | A kind of sub- terahertz wave detector enhancing fuel factor |
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| 六氮五铌微测热辐射计太赫兹阵列探测芯片研究;涂学凑 等;《中国激光》;20190630;第46卷(第6期);全文 * |
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