CN110444538A - Electronic device - Google Patents
Electronic device Download PDFInfo
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- CN110444538A CN110444538A CN201811555287.9A CN201811555287A CN110444538A CN 110444538 A CN110444538 A CN 110444538A CN 201811555287 A CN201811555287 A CN 201811555287A CN 110444538 A CN110444538 A CN 110444538A
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- Prior art keywords
- light
- conversion element
- photo
- emitting component
- electric conversion
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0601—Structure
- H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Abstract
The present invention provides a kind of electronic device, includes optical coupler module and encapsulating structure.Wherein, optical coupler module includes light-emitting component and photo-electric conversion element.Light-emitting component is stacked on the light-receiving surface of photo-electric conversion element.Light-emitting component is to generate optical signal to receive input signal, and according to this input signal.Photo-electric conversion element is to receive optical signal and according at least one control signal of optical signal output.Encapsulating structure includes transparent encapsulated layer.This transparent encapsulated layer is the light-receiving surface of covering luminous element Yu at least partly photo-electric conversion element.This transparent encapsulated layer has curved surface in the side of the light-receiving surface far from photo-electric conversion element.This curved surface is reflecting surface.
Description
Technical field
The present invention relates to a kind of electronic devices, more particularly to a kind of electricity with optical coupler module (photo coupler)
Sub-device.
Background technique
Optical coupler module is applied in a variety of different electronic devices.By taking general common optical relay as an example, light after
Electric appliance is a kind of electronic control device, has control system (also known as input circuit, internal to have optical coupler module) and is controlled
System (also known as output loop) processed, is usually applied in automatic control circuit.Operationally, optical relay can be regarded as a kind of benefit
A kind of automatic switch of control larger current is gone with lesser electric current, and is made with automatic adjustment, safeguard protection, conversion circuit etc.
With.
Fig. 1 is the circuit diagram of a typical optical relay.As shown in the figure, this optical relay 10 include a light-emitting component 12,
One photo-electric conversion element 14 and two MOS transistors 16,18.This light-emitting component 12, such as a light emitting diode (light
Emitting diode, LED), be connected to optical relay 10 input pin T1, T2 it is (i.e. smaller to receive a current signal
Electric current), and an optical signal (usually infrared light) is generated according to this current signal.This photo-electric conversion element 14 includes an inspection light two
Pole pipe array (not shown).The source S 1 of two MOS transistors 16,18, S2 connects, drain D 1, D2 be connected to light after
The output connecting pin T3, T4 of electric appliance 10.The inspection light diode array of photo-electric conversion element 14 receives the light for carrying out self-emission device 12
It after signal, can generate voltage change (i.e. pressure drop), and influence two MOS transistor transistors 16,18 on state, into
And control the electric current (i.e. larger current) for flowing through this two MOS transistors 16,18.
Fig. 2A is the schematic diagram of the section structure of the 10 1 typical package structure of optical relay of Fig. 1, and Fig. 2 B is that a vertical view is shown
It is intended to show the photo-electric conversion element 14 and two MOS transistors 16,18 of this encapsulating structure lower half.For in structure,
As shown in Fig. 2A and Fig. 2 B, light-emitting component 12 is typically situated in the upper half of optical relay 10, and photo-electric conversion element 14 and two
A MOS transistor 16,18 is then positioned at the lower half of optical relay 10.Substantially, photo-electric conversion element 14 and two golden oxygen
Semitransistor 16,18 is chip independent, and light-emitting component 12 is in alignment with photo-electric conversion element 14, especially photoelectric conversion
The inspection light diode array (not shown) of 14 upper surface of element.On photo-electric conversion element 14 and have at least two output ends,
The grid G 1 of two MOS transistors 16,18 is connected to by conducting wire (bonding wire) 19, G2 is to control golden oxygen hemihedral crystal
The on state of body pipe 16,18.In addition, the drain D 1 of two MOS transistors 16,18 in figure, D2 is positioned at the bottom of chip
Portion, and two input pin T1 of lead frame (lead frame) are connected directly to, T2, the output end as optical relay 10.
And two MOS transistors 16,18 source S 1, S2 are interconnected positioned at the upper surface of chip, and by conducting wire 20.
As shown in Fig. 2A and Fig. 2 B, since light-emitting component 12 is the lead frame for being set to the upper half of optical relay 10, and
Photo-electric conversion element 14 and two MOS transistor 16,18 are the lead frames for being set to the lower half of optical relay 10, because
This needs to be packaged processing procedure respectively to the upper half of lead frame and lower half, and packaging cost is caused to be difficult to decrease.
Summary of the invention
In view of this, the present invention provides a kind of electronic device, its internal optical coupler module encapsulation process can simplify, with drop
Low packaging cost.
One embodiment of the invention provides a kind of electronic device.This electronic device includes that an optical coupler module and an encapsulation are tied
Structure.Wherein, optical coupler module includes a light-emitting component and a photo-electric conversion element.Light-emitting component is to be stacked in photo-electric conversion element
A light-receiving surface on.Light-emitting component is to generate an optical signal to receive an input signal, and according to this input signal.Photoelectricity turns
Changing element is to receive optical signal and according at least one control signal of optical signal output.Encapsulating structure includes a transparent enclosure
Layer.This transparent encapsulated layer is the light-receiving surface of covering luminous element Yu at least partly photo-electric conversion element.This transparent encapsulated layer is remote
The side of light-receiving surface from photo-electric conversion element has a curved surface.This curved surface is a reflecting surface.
One embodiment of the invention provides an electronic device.This electronic device includes that an optical coupler module and an encapsulation are tied
Structure.Wherein, optical coupler module includes a light-emitting component and a photo-electric conversion element.Light-emitting component is to be stacked in photo-electric conversion element
A light-receiving surface on, light-emitting component is to generate an optical signal to receive an input signal, and according to input signal.Photoelectric conversion
Element is to receive optical signal and according at least one control signal of optical signal output.Encapsulating structure includes a smooth penetrated bed and one
Reflection layer.Light penetrated bed is on the light-receiving surface of light-emitting component and at least partly photo-electric conversion element.Reflection layer is position
In on a upper surface of light penetrated bed, the light to self-emission device in future reflexes to the light-receiving surface of photo-electric conversion element.
One embodiment of the invention simultaneously provides another electronic device.This electronic device includes multiple electronic units and an envelope
Assembling structure.Each electronic unit includes an optical coupler module and a switch control module.Each optical coupler module includes one luminous
Element and a photo-electric conversion element.Light-emitting component is stacked on a light-receiving surface of photo-electric conversion element, light-emitting component be to
An input signal is received, and generates an optical signal according to input signal.Photo-electric conversion element is to receive optical signal and foundation
At least one control signal of optical signal output.Switch control module is electrically connected to photo-electric conversion element, and controls according at least one
Signal is to control at least one switch.Encapsulating structure includes a smooth penetrated bed, a reflection layer, an input leg structure and an output
Leg structure.Light penetrated bed is on the light-receiving surface of light-emitting component and at least partly photo-electric conversion element.Reflection layer is position
In on a upper surface of light penetrated bed, the light to self-emission device in future reflexes to the light-receiving surface of photo-electric conversion element.This
A little electronic units are electrical connection input leg structure and output connecting pin structure
Since light-emitting component of the invention is directly to be stacked on photo-electric conversion element, compared to traditional photoelectricity
Conversion equipment, such as optical relay, photo-coupler, electronic device of the invention need to only use the lead frame of lower half, thus can
Effectively to simplify encapsulation procedure, packaging cost is reduced.Secondly, these encapsulating structures also contribute to reducing package thickness, reduction envelope
Fill size.In addition, electronic device of the invention is also contributed to multiple electronics lists comprising light-emitting component and photo-electric conversion element
In the same encapsulating structure, to reduce cost, that reduces electronic device occupies size for member integration.
Specific embodiment of the present invention will be further described by examples and drawings below.
Detailed description of the invention
Fig. 1 is the circuit diagram of a typical optical relay.
Fig. 2A is the schematic diagram of the section structure of the one typical package structure of optical relay of Fig. 1.
Fig. 2 B is the schematic top plan view for the lower half of a typical package structure shown in Fig. 2A.
Fig. 3 A is the schematic diagram of the section structure of one first embodiment of optical relay of the invention.
Fig. 3 B is that optical relay shown in Fig. 3 A removes the schematic top plan view being covered in after the opaque encapsulated layer in outside.
Fig. 4 is the schematic diagram of the section structure of one second embodiment of optical relay of the invention.
Fig. 5 is the schematic diagram of the section structure of one 3rd embodiment of optical relay of the invention.
Fig. 6 A is the schematic diagram of the section structure of one fourth embodiment of optical relay of the invention.
Fig. 6 B is the schematic top plan view for the lower half of optical relay shown in Fig. 6 A.
Fig. 7 A is the diagrammatic cross-section of the first embodiment of electronic device of the invention.
Fig. 7 B is schematic top plan view of the electronic device of Fig. 7 A after removing the encapsulating material being covered in above chip.
Fig. 8 is the diagrammatic cross-section of one second embodiment of electronic device of the invention.
Fig. 9 is the diagrammatic cross-section of one 3rd embodiment of electronic device of the invention.
Figure 10 A is the diagrammatic cross-section of one fourth embodiment of electronic device of the invention.
Figure 10 B is schematic top plan view of the electronic device of Figure 10 A after removing the encapsulating material being covered in above chip.
Figure 11 is the 5th embodiment of electronic device 1 of the invention after removing the encapsulating material being covered in above chip
Schematic top plan view.
Description of symbols
10 optical relays
12 light-emitting components
14 photo-electric conversion elements
16,18 MOS transistors
19,20 conducting wires
100,200,300,400 optical relays
120,420,520,820a optical coupler module
140,440 output modules
162,462 lead frames
164,364,464 transparent encapsulated layers
166,466 opaque encapsulated layers
122,222,322,422,522,822a light-emitting component
124,224,324,424,524,824a photo-electric conversion element
R1 light-receiving surface
172,174,272,472,474 conducting wires
T1, T2, T5, T6 input pin
T3, T4, T7, T8 output connecting pin
R2, R2 ' curved surface
1242 inspection light diode arrays
1244 discharge circuits
150,450 substratum transparents
A1, A2, A3, A4, A5 light-emitting surface
142,144,442,444 MOS transistor chips
G1, G2 grid
S1, S2 source electrode
D1, D2 drain electrode
222a salient point
500,600,700,800,900 electronic devices
540,840a, 940a switch control module
542 logic circuits
562,662,762 smooth penetrated beds
564,664,764,864a reflection layer
765,865 outer package supporting elements
566,866,966 input leg structures
9662 first part's pins
9664 second part pins
568,868 output connecting pin structures
The upper surface R3, R4
810a electronic unit
565 bearing structures
8652 partitions
Specific embodiment
A specific embodiment of the invention is described in more detail below in conjunction with schematic diagram.According to following description and
Claim, advantages and features of the invention will become apparent from.It should be noted that attached drawing is all made of very simplified form and makes
With non-accurate ratio, only for the purpose of facilitating and clarifying the purpose of the embodiments of the invention.
A and Fig. 3 B referring to figure 3., wherein Fig. 3 A is that the cross-section structure of one first embodiment of optical relay of the invention shows
It is intended to, Fig. 3 B is that optical relay shown in Fig. 3 A removes the schematic top plan view being covered in after the opaque encapsulated layer in outside.
As shown in the figure, this optical relay 100 includes an optical coupler module 120, an output module 140, a lead frame
162, a transparent encapsulated layer 164 and an opaque encapsulated layer 166.Optical coupler module 120 includes a light-emitting component 122 and a photoelectricity
Conversion element 124.Optical coupler module 120 is set on the lead frame 162 of left part in figure, wherein light-emitting component 122 is
It is stacked on a light-receiving surface R1 of photo-electric conversion element 124, and conducting wire is electrically connected to by conducting wire (bonding wire) 172
Input the pin T5, T6 of frame 162 are to receive an input signal (i.e. low current signal).Light-emitting component 122 is according to this input signal
An optical signal is generated to project outward.Photo-electric conversion element 124 is to receive the optical signal for carrying out self-emission device, and according to this light
Signal output at least one controls signal to output module 140.
Output module 140 is the lead frame 162 for being set to right part in figure, and is electrically connected to light by conducting wire 174
Electric transition element 124 is to receive control signal.Output module 140 generates an output signal (i.e. high current according to this control signal
Signal), by the output connecting pin T7 of lead frame 162, T8 is exported outward.
Transparent encapsulated layer 164 is the light-receiving surface R1 of covering luminous element 122 Yu at least partly photo-electric conversion element 124, and
And this transparent encapsulated layer 164 forms one in the side (upper side i.e. in figure) of the light-receiving surface R1 far from photo-electric conversion element 124
Curved surface R2.Opaque encapsulated layer 166 is covering transparent encapsulated layer 164, and the light to generate light-emitting component 122 is limited in
Bright encapsulated layer 164 it is interior.For an embodiment, the interface of transparent encapsulated layer 164 and opaque encapsulated layer 166 is (i.e. in figure
Curved surface R2) have the effect of light reflection, the light that light-emitting component 122 generates is reflexed to the light of photo-electric conversion element 124
Face R1.For example, transparent silica gel material (Silicone) can be selected in transparent encapsulated layer, and light color then can be selected in opaque encapsulated layer
Epoxy resin (Epoxy).
In the present embodiment, transparent encapsulated layer 164 is the light-receiving surface R1 that photo-electric conversion element 124 is substantially completely covered, with
Ensure that the light-receiving surface R1 of photo-electric conversion element 124 can fully receive the light for carrying out self-emission device 122.But, of the invention
It is not limited to this.In another embodiment, the difference according to the circuit configuration of photo-electric conversion element, this transparent encapsulated layer 164
The sensitive area that photo-electric conversion element 124 can only be covered, without covering whole surface.Secondly, in the present embodiment, opaque envelope
Layer 166 is filled in addition to cover transparent encapsulated layer 164 other than, also cladding optical coupler module 120 and output module 140, and by this light after
Electric appliance 100 is encapsulated as single a element.
In the present embodiment, light-emitting component 122 is a light-emitting diode chip for backlight unit.For an embodiment, this light-emitting diodes
Tube chip can be an infrared light (infrared) light-emitting diode chip for backlight unit or a visible light emitting diode chip.
In the present embodiment, photo-electric conversion element 124 is a chip, and upper surface (i.e. light-receiving surface R1) includes an inspection light two
Pole pipe array 1242 and a discharge circuit 1244.Examining light diode array 1242 is to receive the light for carrying out self-emission device 122
Signal is to produce electricl energy.Discharge circuit 1244 is according to the optical signal for carrying out self-emission device 122, to inspection light diode array 1242
It discharges, to ensure the normal operation of photo-electric conversion element 124.
In the present embodiment, the size of light-emitting component 122 is significantly less than the light-receiving surface R1 area of photo-electric conversion element 124.
Light-emitting component 122 is the light-receiving surface R1 that photo-electric conversion element 124 is fixed on by a substratum transparent 150.This light-emitting component 122 tool
There are two light-emitting surfaces A1, A2, one of light-emitting surface A1 (is located at and shines in face of the light-receiving surface R1 of photo-electric conversion element 124
The lower side of element 122), another light-emitting surface A2 is then to be located at light-receiving surface of the light-emitting component 122 far from photo-electric conversion element 124
The side (upper side for being located at light-emitting component 122) of R1.Light caused by light-emitting surface A1 can be thrown by substratum transparent 150
It is incident upon the light-receiving surface R1 of 122 lower section of light-emitting component, light caused by light-emitting surface A2 can be then projected to by the reflection of curved surface R2
The other parts of light-receiving surface R1.In this way, light caused by light-emitting component 122 can effectively be distributed in light-receiving surface R1, to ensure
The normal operation of photo-electric conversion element 124.
For an embodiment, luminous the two of tool transparent sapphire substrate (sapphire) are can be used in this light-emitting component 122
Pole pipe chip.Due to the characteristics of luminescence of light emitting diode tool point light source, pass through making for light reflection structure and transparent sapphire substrate
With, the position of its light-emitting surface can be adjusted, achieve the purpose that upper and lower two sides and meanwhile shine.These technologies are LED technology
Known to field, it will not be described here.
In the present embodiment, opaque encapsulated layer 166 is the curved surface R2 of direct covering transparent encapsulated layer 164, to reflect hair
The light that optical element 122 generates.But, the present invention is not limited thereto.In order to promote reflection efficiency, opaque encapsulated layer is reduced
166 absorption for light can be additionally formed a reflection layer, such as a white resin on the surface of transparent encapsulated layer 164
Layer.
In the present embodiment, control signal caused by photo-electric conversion element 124 is a voltage control signal.Output module
140 include two MOS transistor chips 142,144.The grid G 1 of this two MOS transistor chips 142,144, G2 are
To receive aforesaid voltage control signal.The source S 1 of this two MOS transistor chips 142,144, S2 are connected.This two
The drain electrode of MOS transistor chip 142,144 is to be located at its lower surface, is connected directly to lead frame 162 to generate output signal
By the output connecting pin T7 of lead frame 162, T8 is exported outward.
But, the present invention is not limited thereto.In another embodiment, signal is controlled caused by photo-electric conversion element 124
It is a current controling signal, output module 140 includes a bidirectional thyristor (TRIAC).The grid of bidirectional thyristor is to connect
It receives aforementioned currents and controls signal, anode and cathode are then to generate output signal.
Fig. 4 is the schematic diagram of the section structure of 200 1 second embodiment of optical relay of the invention.In addition to conventionally employed conducting wire
Outside the light emitting diode construction of connection, flip (flip chip) light-emitting diodes tube core is can also be used in light-emitting component 222 of the invention
Piece.As shown in the figure, this light-emitting component 222 is directly using photo-electric conversion element 224 as its support plate.In light-emitting component 222
Lower section there is conductive pattern (not shown) of the salient point 222a to be electrically connected on photo-electric conversion element 224, and led by this
Electrical pattern and conducting wire 272 are electrically connected to input the pin T5, T6 of lead frame 162.
In the present embodiment, light-emitting component 222 only has a light-emitting surface A3, positioned at it far from photo-electric conversion element 224
Side.By the setting position (such as being placed in around inspection light diode array) of appropriate adjustment light-emitting component 222, hair can avoid
Optical element 222 covers the light receiving circuit (such as aforementioned inspection light diode array and discharge circuit) on photo-electric conversion element 224.It shines
The reflection that the light that element 222 projects upwards passes through the curved surface R2 between transparent encapsulated layer 164 and opaque encapsulated layer 166
Effectively it is distributed in the region that do not covered by light-emitting component 222 on light-receiving surface R1.But, the present invention is not limited thereto.In another reality
It applies in example, it is possible to use the flip-chip light-emitting diode chip of double-side is as light-emitting component.Since light emitting diode has point light
The characteristics of luminescence in source can reach upper and lower two sides while luminous purpose by the use of transparent sapphire substrate.These technologies
For known to LED technology field, it will not be described here.
Fig. 5 is the schematic diagram of the section structure of one 3rd embodiment of optical relay of the invention.Compared to first embodiment
Optical relay 100, the light-emitting component 322 of the optical relay 300 of the present embodiment is in addition in the side towards photo-electric conversion element 324
With a light-emitting surface A4, this light-emitting component 322 also can lateral direction light emission (that is, four sides of this light-emitting component 322 are
Light-emitting surface A5 is only indicated in figure wherein one with to illustrate).But, this light-emitting component 322 is in separate photo-electric conversion element 324
Side does not shine.This light-emitting component 322 can be a light-emitting diode chip for backlight unit.Due to the hair of light emitting diode tool point light source
Light characteristic can reach the purpose of lateral direction light emission by the setting of light reflection structure.These technologies are LED technology neck
Known to domain, it will not be described here.
In order to which lateral light to be effectively distributed in the light-receiving surface R1 of photo-electric conversion element 324, the curved surface of transparent encapsulated layer 364
R2' shape also cooperates lateral light caused by this light-emitting component to be adjusted.In one embodiment, this curved surface R2' is in correspondence
At lateral light be it is rough and lateral light caused by light-emitting component is projected upwards upward, to ensure light-emitting component 322
The light of generation can effectively be distributed in the light-receiving surface R1 of photo-electric conversion element 324.
On the other hand, light caused by light-emitting surface A4 can be transferred directly to photoelectric conversion element by substratum transparent 150
Part immediately below the light-receiving surface R1 of part 324, especially light-emitting component 322.In this way, light caused by light-emitting component 322 is
Light-receiving surface R1 can be effectively distributed in, it is ensured that the normal operation of photo-electric conversion element 324.
Fig. 6 A is the schematic diagram of the section structure of one fourth embodiment of optical relay of the invention.Fig. 6 B is for shown in Fig. 6 A
Optical relay lower half schematic top plan view.Compared to the optical relay 100 of first embodiment, the light relay of the present embodiment
Device 400 is that optical coupler module 420 (comprising a light-emitting component 422 and a photo-electric conversion element 424) is stacked in output module 440
On (including two MOS transistor chips 442,444).Light-emitting component 422 is the light-receiving surface for being stacked in photo-electric conversion element 424
On R1, and input the pin T5, T6 of lead frame 462 are electrically connected to receive input by conducting wire (bonding wire) 472
Signal (i.e. low current signal).Photo-electric conversion element 424 is to receive the optical signal for carrying out self-emission device 422, and according to this
Optical signal outputs control signals to output module 440.
The grid G 1 of MOS transistor chip 442,444, G2 and source S 1, S2 are to be exposed to outer (be not optically coupled
Module 420 covers).Control signal is to be sent to MOS transistor core by conducting wire 474 caused by photo-electric conversion element 424
The grid G 1, G2 of piece 442,444.Output module 440 generates output signal according to this control signal again, passes through lead frame 462
Output connecting pin T7, T8 are exported outward.
Remaining element of the present embodiment, such as transparent encapsulated layer 464, opaque encapsulated layer 466, substratum transparent 450 are phases
It is similar to the counter element of the first implementation power, it will not be described here.
Compared to the optical relay 100 of first embodiment, the optical relay 400 of the present embodiment can omit is located at optocoupler originally
The lead frame 162 for molding 120 lower section of block facilitates the size for further reducing chip covering (footprint).
In aforementioned first to fourth embodiment, opaque encapsulated layer 166 is by optical coupler module 120 and output module
140 are packaged into single a element.But, the present invention is not limited thereto.According to the demand of actual use, in another embodiment,
Can also be used opaque encapsulated layer by the optical coupler module 120 of this optical relay and output module 140 be packaged into two it is independent
Element, to provide more diverse collocation selection.
Secondly, in previous embodiment, optical coupler module 120 only has single light-emitting component 122,222,322 to generate light
Signal.But, the present invention is not limited thereto.According to the demand in actual design, for example, photo-electric conversion element light-receiving area compared with
Greatly or in the insufficient situation of the light emission luminance of single light-emitting component, it is possible to use a plurality of light-emitting elements, to ensure light-emitting component
The light of generation can effectively be distributed in light-receiving surface R1.
Fig. 7 A is the diagrammatic cross-section of the first embodiment of electronic device of the invention, Fig. 7 B be Fig. 7 A electronic device in
Removal is covered in the schematic top plan view after the encapsulating material above chip.
As shown in the figure, this electronic device 500 includes an optical coupler module 520, a switch control module 540 and an encapsulation
Structure.Wherein, optical coupler module 520 includes a light-emitting component 522 and a photo-electric conversion element 524.Light-emitting component 522 is to stack
In on a light-receiving surface R1 of photo-electric conversion element 524, light-emitting component 522 is believed to receive an input signal, and according to input
Number generate an optical signal.Photo-electric conversion element 524 is to receive optical signal and according at least one control signal of optical signal output.
For a preferred embodiment, light-emitting component 522 is a chip, such as a light-emitting diode chip for backlight unit, photo-electric conversion element 524
It is a chip.The size of photo-electric conversion element 524 is greater than the size of light-emitting component 522.
Switch control module 540 is electrically connected to photo-electric conversion element 524, and according to from photo-electric conversion element 524
At least one switch of at least one control signal control, such as a metal-oxide half field effect transistor.In the present embodiment, this switch control mould
Block 540 is a chip, and optical coupler module 520 is stacked on this switch control module 540.Switch control module 540 can pass through
The mode of conducting wire connection, or the engagement pad of the lower surface by being formed in photo-electric conversion element 524, are electrically connected to photoelectric conversion
Element 524.
In one embodiment, switch control module 540 may include a logic circuit 542.In one embodiment, aforementioned by opening
Closing the switch that control module 540 is controlled can be built into switch control module 540, be also possible to an external switch.
Encapsulating structure includes a smooth penetrated bed 562, a reflection layer 564, one input leg structure 566, an output connecting pin
Structure 568 and a bearing structure 565.Light penetrated bed 562 is to be located at light-emitting component 522 and at least partly photo-electric conversion element 524
Light-receiving surface R1 on.Reflection layer 564 is on a upper surface of light penetrated bed 562, to self-emission device in future 522
Light reflexes to the light-receiving surface R1 of photo-electric conversion element 524.Light-emitting component 522 is that input leg structure is electrically connected by conducting wire
566 to obtain from external input signal.Switch control module 540 is electrical connection output connecting pin structure 568 to generate output
Signal.Bearing structure 565 is to carry switch control module 540.In one embodiment, this bearing structure 565 is independently of
Aforementioned input leg structure 566 and output connecting pin structure 568.But, the present invention is not limited thereto.In other embodiments, this
Bearing structure 565 is also possible to extend connection input leg structure 566 or output connecting pin structure 568.
In the present embodiment, light penetrated bed 562 is made of transparent encapsulation material.The upper surface R3 of light penetrated bed 562 is
One curved surface.It, can automatic shape by the cohesive force that liquid encapsulating material itself has for a preferred embodiment on processing procedure
At this curved surface.Reflection layer 564 can be a coat of metal, is also possible to an opaque encapsulating material layer of light color, will come from
The light of light-emitting component reflexes to the light-receiving surface R1 of photo-electric conversion element 524.
Fig. 8 is the diagrammatic cross-section of 600 1 second embodiment of electronic device of the invention.Compared to the reality of Fig. 7 A and Fig. 7 B
Example is applied, the light penetrated bed 662 of the encapsulating structure of the present embodiment is made of transparent encapsulation material, and upper surface R4 is a plane.
Reflection layer 664 is located in this plane, and the light to self-emission device in future 522 reflexes to photo-electric conversion element 524
Light-receiving surface R1.The design of the encapsulating structure of the present embodiment is conducive to the accurate control of encapsulation procedure, and helps to promote light reflection
The uniformity of layer 664.
Fig. 9 is the diagrammatic cross-section of 700 1 3rd embodiment of electronic device of the invention.Embodiment compared to Fig. 8, light
Penetrated bed 662 is made of transparent encapsulation material, and the light penetrated bed 762 of the encapsulating structure of the present embodiment is then an air layer.Into one
For step, the electronic device of the present embodiment be this air layer is defined using an outer package supporting element 765 of encapsulating structure, and
The inner surface (upper surface for namely corresponding to air layer) of this outer package supporting element 765 forms reflection layer 764, in the future
The light of self-emission device 522 reflexes to the light-receiving surface R1 of photo-electric conversion element 524.In one embodiment, this outer package supports
Part 765 is a preform (pre-mold) support construction.
The design of the encapsulating structure of the present embodiment can save the use of transparent encapsulation material, help to reduce packaging cost,
Promote package speed.
The electronic device 500,600,700 of earlier figures 7A to Fig. 9 all has a switch control module 540, receives and comes from light
The control signal of electric transition element 524 is to generate output signal.But, the present invention is not limited thereto.In another embodiment, this
Electronic device is to omit this switch control module, but directly turn photoelectricity as a photo-coupler (photo coupler)
The signal for changing element 524 exports outward, to provide isolation effect.
Figure 10 A is the diagrammatic cross-section of the fourth embodiment of electronic device 800 of the invention, and Figure 10 B is the electronics of Figure 10 A
Schematic top plan view of the device 800 after removing the encapsulating material being covered in above chip.
Compared to being provided only with an optical coupler module 520 and one in the electronic device 500,600,700 of previous embodiment
A switch control module 540, the electronic device 800 of the present embodiment (are only indicated wherein in figure comprising multiple electronic unit 810a
One of) and an encapsulating structure.Each electronic unit 810a includes an optical coupler module 820a and a switch control module 840a.
Optical coupler module 820a is stacked on switch control module 840a.
Each optical coupler module 820a includes an a light-emitting component 822a and photo-electric conversion element 824a.Light-emitting component 822a
It is to be stacked on a light-receiving surface R1 of photo-electric conversion element 824a.Light-emitting component 822a be to receive an input signal, and according to
An optical signal is generated according to input signal.Photo-electric conversion element 824a is to receive optical signal and according to optical signal output at least one
Control signal.Switch control module 840a is electrically connected to photo-electric conversion element 824a, and according to from photo-electric conversion element
At least one switch of control signal control of 824a.
Encapsulating structure includes an outer package supporting element 865, multiple reflection layer 864a (only one of mark in figure), one
Input leg structure 866 and an output connecting pin structure 868.These reflection layers 864a is formed at outer package supporting element 865
Inner surface, and it is aligned with the light-emitting component 822a of each electronic unit 810a, with self-emission device 822a's in future
Light reflexes to the light-receiving surface R1 of corresponding photo-electric conversion element 824a.In one embodiment, this outer package supporting element 865 is
One preform (pre-mold) support construction.Also, in one embodiment, this outer package supporting element 865 has at least one partition
8652 (only one of marks in figure), define multiple spaces to accommodate these electronic units 810a.These reflection layers
864a is located in corresponding space.By the setting of this partition 8652, it can effectively completely cut off the light of adjacent electronic units 810a
The interference of signal, to ensure the normal operation of each electronic unit 810a.
Each light-emitting component 822a is to be electrically connected input leg structure 866 by conducting wire to believe to obtain from external input
Number.Each switch control module 840a is to be electrically connected output connecting pin structure 868 by conducting wire to export outward to generate output signal.
The electronic device of the present embodiment is the encapsulating structure of Fig. 9 to be applied to multiple electronic unit 810a, and carry out corresponding
Adjustment.But, the present invention is not limited thereto.The other configurations mode that the present invention discloses, such as the encapsulating structure of Fig. 7 A and Fig. 8,
It is equally applicable to these electronic devices with multiple electronic units.
Figure 11 is 900 1 the 5th embodiment of electronic device of the invention after removing the encapsulating material being covered in above chip
Schematic top plan view.In the embodiment of Figure 10 A, leg structure 866 is inputted only to provide input signal to each luminous member
Part 822a.In comparison, the input leg structure 966 of the encapsulating structure of the present embodiment be comprising first part's pin 9662 with
One second part pin 9664, wherein first part's pin 9662 be electrically connected to by conducting wire each light-emitting component 822a with
First input signal is provided, second part pin 9664 is then that each switch control module 940a is electrically connected to by conducting wire, with
One second input signal is provided.Switch control module 940a is according at least one control signal from photo-electric conversion element 824a
With at least one switch of the second input signal control from second part pin 9664.
The embodiment of earlier figures 7A to Figure 11 is to be mentioned input signal by input leg structure 566 in a manner of conducting wire connection
It is supplied to photoelectric coupling module 520 or switch control module 540, and is to be produced switch control module 540 in a manner of conducting wire connection
Raw output signal is exported outward by output connecting pin structure 568.But, the present invention is not limited thereto.Need according to actual use
It asks, other electric connection structures, such as copper foil (copper foil), lead frame etc. can also be used in this electronic device, is connected
It connects.
Since light-emitting component of the invention is directly to be stacked on photo-electric conversion element, compared to traditional photoelectricity
Conversion equipment, such as optical relay, photo-coupler, electronic device of the invention need to only use the lead frame of lower half, thus can
Effectively to simplify encapsulation procedure, packaging cost is reduced.Secondly, these encapsulating structures also contribute to reducing package thickness, reduction envelope
Fill size.In addition, electronic device of the invention is also contributed to multiple electronics lists comprising light-emitting component and photo-electric conversion element
In the same encapsulating structure, to reduce cost, that reduces electronic device occupies size for member integration.
It above are only preferred embodiments of the present invention, any restrictions do not carried out to the present invention.Technology belonging to any
The technical staff in field, in the range of not departing from technological means of the invention, technological means and technology that the present invention is disclosed
Content makes the variation such as any type of equivalent replacement or modification, belongs to the content without departing from technological means of the invention, still falls within
Within protection scope of the present invention.
Claims (19)
1. a kind of electronic device, characterized by comprising:
Optical coupler module includes light-emitting component and photo-electric conversion element, and the light-emitting component is to be stacked in the photoelectric conversion element
On the light-receiving surface of part, the light-emitting component is to generate optical signal to receive input signal, and according to the input signal, described
Photo-electric conversion element is to receive the optical signal and according at least one control signal of optical signal output；And
Encapsulating structure, including transparent encapsulated layer cover the described of the light-emitting component and at least partly described photo-electric conversion element
Light-receiving surface, the transparent encapsulated layer have curved surface, the song in the side of the light-receiving surface far from the photo-electric conversion element
Face is reflecting surface.
2. electronic device according to claim 1 further includes output module, it is electrically connected to the photo-electric conversion element, and
According at least one control signal to generate output signal.
3. electronic device according to claim 1, wherein the control signal is voltage control signal or current control
Signal.
4. electronic device according to claim 1, wherein the light-emitting component be visible light emitting diode chip or
Sapphire substrate light-emitting diode chip for backlight unit.
5. electronic device according to claim 1, wherein the light-emitting component has an at least light-emitting surface, is located at described
The side of the light-receiving surface of the light-emitting component far from the photo-electric conversion element.
6. electronic device according to claim 1, wherein the light-emitting component has at least two light-emitting surfaces, wherein one
A light-emitting surface is the light-receiving surface in face of the photo-electric conversion element.
7. electronic device according to claim 1, wherein the light-emitting component is to be fixed on the light by substratum transparent
The light-receiving surface of electric transition element.
8. electronic device according to claim 1, wherein the encapsulating structure further includes opaque encapsulated layer, covers institute
State transparent encapsulated layer.
9. electronic device according to claim 1, wherein the optical coupler module is stacked on the output module.
10. a kind of electronic device, characterized by comprising:
Optical coupler module includes light-emitting component and photo-electric conversion element, and the light-emitting component is to be stacked in the photoelectric conversion element
On the light-receiving surface of part, the light-emitting component is to generate optical signal to receive input signal, and according to the input signal, described
Photo-electric conversion element is to receive the optical signal and according at least one control signal of optical signal output；And
Encapsulating structure, including light penetrated bed and reflection layer, the smooth penetrated bed be located at the light-emitting component at least partly
On the light-receiving surface of the photo-electric conversion element, the reflection layer is located on the upper surface of the smooth penetrated bed, to
Light from the light-emitting component is reflexed to the light-receiving surface of the photo-electric conversion element.
11. electronic device according to claim 10 further includes switch control module, it is electrically connected to the photoelectric conversion element
Part, and according at least one control signal to control at least one switch.
12. electronic device according to claim 10, wherein the smooth penetrated bed is air layer or transparent encapsulation material
Layer.
13. electronic device according to claim 10, wherein the upper surface of the smooth penetrated bed is plane.
14. electronic device according to claim 10, wherein the upper surface of the smooth penetrated bed is curved surface.
15. electronic device according to claim 10, wherein the encapsulating structure further includes outer package supporting element, described
Reflection layer is the inner surface positioned at the outer package supporting element.
16. electronic device according to claim 11, wherein the optical coupler module is to be stacked in the switch control mould
On block.
17. a kind of electronic device, characterized by comprising:
Polyelectron unit, each electronic unit includes:
Optical coupler module, each optical coupler module include light-emitting component and photo-electric conversion element, and the light-emitting component is to stack
In on the light-receiving surface of the photo-electric conversion element, the light-emitting component is believed to receive input signal, and according to the input
Number generate optical signal, the photo-electric conversion element be to receive the optical signal and according to the optical signal output at least one control
Signal processed；And
Switch control module is electrically connected to the photo-electric conversion element, and according at least one control signal to control at least
One switch；And
Encapsulating structure, including light penetrated bed, multiple reflection layers, input leg structure and output connecting pin structure, the light penetrate
Layer is on the light-receiving surface of the light-emitting component and at least partly described photo-electric conversion element, and the reflection layer is position
In on the upper surface of the smooth penetrated bed, and it is respectively aligned to each light-emitting component, corresponding described shine will be come from
The light of element reflexes to the light-receiving surface of the corresponding photo-electric conversion element, and the electronic unit is described in electrical connection
Input leg structure and the output connecting pin structure.
18. electronic device according to claim 17, wherein the encapsulating structure further includes outer package supporting element, described
Reflection layer is the inner surface positioned at the outer package supporting element.
19. electronic device according to claim 18, wherein the outer package supporting element has at least one partition with fixed
Justice goes out multiple spaces to accommodate the electronic unit.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810409735 | 2018-05-02 | ||
| CN2018104097358 | 2018-05-02 |
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| Publication Number | Publication Date |
|---|---|
| CN110444538A true CN110444538A (en) | 2019-11-12 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101819969A (en) * | 2009-02-27 | 2010-09-01 | 亿光电子工业股份有限公司 | Optical coupler |
| CN101872761A (en) * | 2009-04-23 | 2010-10-27 | 欧姆龙株式会社 | Optocoupler |
| US20150303180A1 (en) * | 2013-08-30 | 2015-10-22 | Kabushiki Kaisha Toshiba | Photocoupler |
| US9236521B2 (en) * | 2012-10-30 | 2016-01-12 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Optocoupler having lens layer |
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2018
- 2018-12-19 CN CN201811555287.9A patent/CN110444538A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101819969A (en) * | 2009-02-27 | 2010-09-01 | 亿光电子工业股份有限公司 | Optical coupler |
| CN101872761A (en) * | 2009-04-23 | 2010-10-27 | 欧姆龙株式会社 | Optocoupler |
| US9236521B2 (en) * | 2012-10-30 | 2016-01-12 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Optocoupler having lens layer |
| US20150303180A1 (en) * | 2013-08-30 | 2015-10-22 | Kabushiki Kaisha Toshiba | Photocoupler |
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