CN110441988A - Eurymeric light resistance composition and Cutting Road forming method - Google Patents
Eurymeric light resistance composition and Cutting Road forming method Download PDFInfo
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- CN110441988A CN110441988A CN201810710337.XA CN201810710337A CN110441988A CN 110441988 A CN110441988 A CN 110441988A CN 201810710337 A CN201810710337 A CN 201810710337A CN 110441988 A CN110441988 A CN 110441988A
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- light resistance
- resistance composition
- eurymeric light
- eurymeric
- solvent
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- 238000000034 method Methods 0.000 title claims abstract description 50
- 239000000203 mixture Substances 0.000 title claims abstract description 42
- 239000002904 solvent Substances 0.000 claims abstract description 34
- 239000003960 organic solvent Substances 0.000 claims abstract description 14
- -1 nitrine carboxylate Chemical class 0.000 claims abstract description 12
- 229920005989 resin Polymers 0.000 claims abstract description 9
- 239000011347 resin Substances 0.000 claims abstract description 9
- 229930192627 Naphthoquinone Natural products 0.000 claims abstract description 8
- 150000002791 naphthoquinones Chemical class 0.000 claims abstract description 8
- 239000007787 solid Substances 0.000 claims abstract description 8
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 claims abstract description 6
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 claims abstract description 6
- 238000012545 processing Methods 0.000 claims description 23
- 239000004065 semiconductor Substances 0.000 claims description 17
- 239000013078 crystal Substances 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 11
- 239000003795 chemical substances by application Substances 0.000 claims description 7
- 125000000217 alkyl group Chemical group 0.000 claims description 6
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 6
- 238000000059 patterning Methods 0.000 claims description 6
- 239000000654 additive Substances 0.000 claims description 5
- 150000002576 ketones Chemical class 0.000 claims description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 4
- 229910052799 carbon Inorganic materials 0.000 claims description 4
- 238000004528 spin coating Methods 0.000 claims description 4
- 238000009835 boiling Methods 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 150000002170 ethers Chemical class 0.000 claims description 2
- 238000010422 painting Methods 0.000 claims description 2
- 239000004744 fabric Substances 0.000 claims 1
- 239000007921 spray Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 13
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- CATSNJVOTSVZJV-UHFFFAOYSA-N heptan-2-one Chemical compound CCCCCC(C)=O CATSNJVOTSVZJV-UHFFFAOYSA-N 0.000 description 6
- DNIAPMSPPWPWGF-UHFFFAOYSA-N monopropylene glycol Natural products CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 6
- 238000005507 spraying Methods 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Natural products C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 230000003694 hair properties Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229960004063 propylene glycol Drugs 0.000 description 3
- 235000013772 propylene glycol Nutrition 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 2
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 2
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 2
- LNTHITQWFMADLM-UHFFFAOYSA-N gallic acid Chemical compound OC(=O)C1=CC(O)=C(O)C(O)=C1 LNTHITQWFMADLM-UHFFFAOYSA-N 0.000 description 2
- 239000004615 ingredient Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229940043265 methyl isobutyl ketone Drugs 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000003607 modifier Substances 0.000 description 2
- 239000005011 phenolic resin Substances 0.000 description 2
- 229920001568 phenolic resin Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- BDHFUVZGWQCTTF-UHFFFAOYSA-N sulfonic acid Chemical compound OS(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-N 0.000 description 2
- GBQZZLQKUYLGFT-UHFFFAOYSA-N (2,4-dihydroxyphenyl)-(2,3,4-trihydroxyphenyl)methanone Chemical compound OC1=CC(O)=CC=C1C(=O)C1=CC=C(O)C(O)=C1O GBQZZLQKUYLGFT-UHFFFAOYSA-N 0.000 description 1
- ZRDYULMDEGRWRC-UHFFFAOYSA-N (4-hydroxyphenyl)-(2,3,4-trihydroxyphenyl)methanone Chemical compound C1=CC(O)=CC=C1C(=O)C1=CC=C(O)C(O)=C1O ZRDYULMDEGRWRC-UHFFFAOYSA-N 0.000 description 1
- 150000000181 1,2-naphthoquinones Chemical class 0.000 description 1
- HTQNYBBTZSBWKL-UHFFFAOYSA-N 2,3,4-trihydroxbenzophenone Chemical compound OC1=C(O)C(O)=CC=C1C(=O)C1=CC=CC=C1 HTQNYBBTZSBWKL-UHFFFAOYSA-N 0.000 description 1
- HXDOZKJGKXYMEW-UHFFFAOYSA-N 4-ethylphenol Chemical compound CCC1=CC=C(O)C=C1 HXDOZKJGKXYMEW-UHFFFAOYSA-N 0.000 description 1
- 101001101476 Bacillus subtilis (strain 168) 50S ribosomal protein L21 Proteins 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- 125000002252 acyl group Chemical group 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011469 building brick Substances 0.000 description 1
- 239000004566 building material Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229920006026 co-polymeric resin Polymers 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000032050 esterification Effects 0.000 description 1
- 238000005886 esterification reaction Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229940074391 gallic acid Drugs 0.000 description 1
- 235000004515 gallic acid Nutrition 0.000 description 1
- 125000004836 hexamethylene group Chemical group [H]C([H])([*:2])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[*:1] 0.000 description 1
- 125000004464 hydroxyphenyl group Chemical group 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 230000003902 lesion Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 150000007974 melamines Chemical class 0.000 description 1
- 239000012046 mixed solvent Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- IWDCLRJOBJJRNH-UHFFFAOYSA-N p-cresol Chemical compound CC1=CC=C(O)C=C1 IWDCLRJOBJJRNH-UHFFFAOYSA-N 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 208000007578 phototoxic dermatitis Diseases 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000011342 resin composition Substances 0.000 description 1
- DCKVNWZUADLDEH-UHFFFAOYSA-N sec-butyl acetate Chemical compound CCC(C)OC(C)=O DCKVNWZUADLDEH-UHFFFAOYSA-N 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- XZZNDPSIHUTMOC-UHFFFAOYSA-N triphenyl phosphate Chemical class C=1C=CC=CC=1OP(OC=1C=CC=CC=1)(=O)OC1=CC=CC=C1 XZZNDPSIHUTMOC-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/782—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, each consisting of a single circuit element
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials For Photolithography (AREA)
Abstract
A kind of eurymeric light resistance composition, solid, the viscosity between 5~150cSt with 35wt%~55wt%, suitable for forming thickness between 6~20 μm of coated film, the eurymeric light resistance composition includes: the resin component of (A) alkali-soluble；(B) two nitrine carboxylate of naphthoquinones；And (C) organic solvent, include: (C1) high volatile solvent；And (C2) low voc solvent, wherein the high volatile solvent has rate of volatilization 1.5~5.0 with the rate of volatilization of butyl acetate for 1, the low voc solvent has rate of volatilization 0.2~1.0.The present invention goes back while providing a kind of Cutting Road forming method.
Description
Technical field
It is applicable in the present invention relates to a kind of eurymeric light resistance composition and using its Cutting Road forming method, more particularly to one kind
In the eurymeric light resistance composition for forming thick film and use its Cutting Road forming method.
Background technique
Photonasty mask is widely applied in manufacture of semiconductor, to define semiconductor element, such as liquid crystal display element
Or the patterns such as each material layer, wiring, electrode in optical element etc..After integrated circuit is formed, wafer can be cut into
The integrated circuit of multiple crystal grain is used in biggish circuit or electronic component.Wafer cutting technique is for semiconductor front end system
Journey can be described as of crucial importance, although the final step of front end of line, superiority and inferiority and the efficiency of cutting technique may be direct
Lead to the decline of yield or the raising of processing procedure cost.
Wafer has had multilayer material to be piled up on Silicon Wafer support plate before being cut, industry can generally be made first with etching
Journey removes subelement layer and material layer, carries out multiple crystal grain that sawing formation is separated from each other again after forming Cutting Road.According to not
With processing procedure and product demand, the etch process to cut needs to carry out using the mask of different-thickness, but thickness is bigger
Mask is less susceptible to control its deadline and yield on processing procedure, and is also more easy to happen what mask was burnt in yellow light process
Problem causes element damage or pollution, influences product yield.
In view of this, in need provide a kind of light resistance composition suitable for different-thickness, good thickness can be especially formed
The light resistance composition of film lesion element or will not cause the decline of product yield while forming Cutting Road.And based at
Originally it considers, is most preferably the thick film light resistance composition that can directly cover for existing board and processing procedure.
Summary of the invention
The present invention provides a kind of eurymeric light resistance composition, has the solid of 35wt%~55wt%, between 5~150cSt
Viscosity, suitable for forming thickness between 6~20 μm of coated film, the eurymeric light resistance composition includes: (A) alkali-soluble
Resin component；(B) two nitrine carboxylate of naphthoquinones；And (C) organic solvent, include: (C1) high volatile solvent, wherein with acetic acid
The rate of volatilization of butyl ester is 1, and the high volatile solvent has rate of volatilization 1.5~5.0；And (C2) low voc solvent,
Wherein with the rate of volatilization of butyl acetate for 1, the low voc solvent has rate of volatilization 0.2~1.0.
In the preferred embodiment, it is 5 ketones and ether below that above-mentioned (C1) high volatile solvent, which is carbon number,
Any one of class or combinations thereof.
In the preferred embodiment, above-mentioned (C1) high volatile solvent accounts for the 20% of (C) organic solvent quality
~70%.
In the preferred embodiment, above-mentioned (C2) low voc solvent is boiling point between 120 DEG C~160 DEG C
Organic solvent.
In the preferred embodiment, the viscosity of above-mentioned thick film eurymeric light resistance composition is 90cSt or less.
In the preferred embodiment, above-mentioned (C2) low voc solvent accounts for described (C) organic solvent quality
30%~80%.
In the preferred embodiment, above-mentioned eurymeric light resistance composition also includes: (D) interfacial agent；And
(E) other additives, the compound comprising the aromatic hydroxyl as shown in following formula (I) is as sensitizer.
Wherein R1, R2, R3 represent hydrogen atom or rudimentary alkyl, and R4, R5, R6 represent alkyl or aromatic hydroxyl or hydrogen,
X, Y, Z represent 1~3 integer, the integer that l, m, n are 1~3.
The present invention goes back while providing a kind of Cutting Road forming method, includes: the eurymeric photoresist of the above-mentioned offer of the coating present invention
Constituent is on semiconductor element, forming thickness between 6~20 μm of coated film, and wherein eurymeric light resistance composition has 35wt%
The solid of~55wt%, the viscosity between 5~150cSt, and semiconductor element includes substrate, and is formed on substrate
Element layer；Coated film after patterning is dry, forms mask film；System is etched to semiconductor element using mask film as mask
Journey removes part semiconductor element；Remove mask film；And it carries out crystal grain and cuts saw.
In the preferred embodiment, above-mentioned application step applies processing procedure, spraying processing procedure or spin coating system using seam
Journey.
The above description is only an overview of the technical scheme of the present invention, in order to better understand the technical means of the present invention,
And it can be implemented in accordance with the contents of the specification, and in order to allow above and other objects, features and advantages of the invention can
It is clearer and more comprehensible, it is special below to lift preferred embodiment, and cooperate attached drawing, detailed description are as follows.
Detailed description of the invention
In the Cutting Road forming method that Fig. 1~5 are drawn for an embodiment according to the present invention, the cross-section structure of different step
Schematic diagram.
Specific embodiment
The present invention provides a kind of eurymeric light resistance composition, suitable for forming thickness between 6~20 μm of thick film, to make mask
It is used in the etch process to form Cutting Road.Eurymeric light resistance composition provided by the invention can not only quickly and uniformly be done
It is dry, bumping in the prior art is solved the problems, such as under the premise of not causing processing time and cost or is burnt, simultaneously because it has
The characteristic of some low-viscosities and low-solid content can be used the semiconductor front ends processing procedures such as seam painting, spraying, spin coating, effectively integrate simultaneously
Set is used for existing processing procedure and board.For above and other purpose of the invention, feature, advantage can be clearer and more comprehensible, hereafter will
It is directed to eurymeric light resistance composition of the invention respectively and is explained using its Cutting Road forming method.It provides simultaneously of the invention
The test result of different embodiments and comparative example, to illustrate the present invention and its effect.
Eurymeric light resistance composition of the invention includes the resin component, two nitrine carboxylate of (B) naphthoquinones of (A) alkali-soluble
And (C) organic solvent, and (C) organic solvent is by least one (C1) high volatile solvent and at least one (C2) is low waves
Mixed solvent composed by hair property solvent.With the rate of volatilization of butyl acetate for 1, (C1) high volatile solvent of the invention has
Rate of volatilization 1.5~5.0, and (C2) low voc solvent has rate of volatilization 0.2~1.0.(C1) high volatile solvent accounts for
(C) the 20%~70% of organic solvent quality, and (C2) low voc solvent account for described (C) organic solvent quality 30%~
80%.Eurymeric light resistance composition of the invention can also selectively add (D) interfacial agent or/and (E) according to demand
Other additives, such as adherence modifier, sensitizer etc..The solid of eurymeric light resistance composition be preferably 35wt%~
55wt%.
(A) resin of alkali-soluble can select appointing in phenolic resin, alkyl styrene/styrene copolymer resin etc.
One or combinations thereof is not particularly limited herein as long as being dissolvable in water the resin of alkaline-based developer.The present invention is preferable
Phenolic resin is used in embodiment.
Two nitrine carboxylate of (B) naphthoquinones in the present invention is emulsion, preferably uses two nitrine carboxylate of naphthoquinones.Preferably
2,3,4- trihydroxybenzophenone, 2,3,4,4'- tetrahydroxybenzophenone, 2,3,4,2', 4'- pentahydroxybenzophenone, three (4-
Hydroxy phenyl) methane, three (4- hydroxy phenyl) ethane, bis- [1- (4- the hydroxy phenyl) -1- Methylethyl] benzene of 1,4- etc. and 1,2-
The esterification of naphthoquinones diazido -4- sulphonic acid ester (or sulfonic acid chloride), 1,2- naphthoquinones diazido -5- sulphonic acid ester (or sulfonic acid chloride)
Object etc..With the resin component of (A) alkali-soluble for for 100 parts by weight, two nitrine carboxylate of (B) naphthoquinones is preferably
With the rate of volatilization of butyl acetate for 1, (C1) high volatile solvent has rate of volatilization 1.5~5.0.(C1) height is waved
Hair property solvent be carbon number is any one of 5 ketones and ethers below or combinations thereof, such as (rate of volatilization is 2- butanone
3.8), methyl iso-butyl ketone (MIBK) (rate of volatilization 1.6) etc., and preferably select 2- butanone (Methyl Ethyl Ketone, letter
Claim MEK).
With the rate of volatilization of butyl acetate for 1, (C2) low voc solvent has rate of volatilization 0.2~1.0.(C2) low to wave
Hair property solvent can select propylene glycol monomethyl ether acetate (0.4), diethylene glycol dimethyl ether (0.36), ethylene glycol monoalkyl ether second
Esters of gallic acid (0.3), propylene-glycol monoalky lether class (0.7), propylene glycol dialkyl ether (0.54), propylene-glycol monoalky lether acetic acid esters
Class (0.4), aromatic hydrocarbon (such as dimethylbenzene (0.7) etc.), ketone (such as the 2-HEPTANONE (0.34), hexamethylene that carbon number is 6 or more
Ketone (0.3) etc., and preferably select 2-HEPTANONE (Methyl N-Amyl Ketone, abbreviation MAK).And preferably implement in this case
In example, (C2) low voc solvent is boiling point between 120 DEG C~160 DEG C of organic solvent.
(D) interfacial agent preferably selects fluorine/Polyester interfacial agent, such as the Flourate FC- of commercially available 3M
430, F top EF122A of FC-431 and Tochem product, 122B, 122C, 126 and BL20 etc..With (A) alkali-soluble
Resin component be 100 parts by weight for, (D) interfacial agent is preferably(E) its
He can selectively add adherence modifier by additive on demand, for increasing positive-type photosensitive resin composition and attaching substrates
Between adherence, such as Cymel-300,303 (manufactures of three well commercial firms), MW-30MH, MW-30, MS-11, MS-001, MX-750,
The melamines such as MX-706 (acyl) polyimide resin etc.；Sensitizer can also be added, to increase the sensitivity of photosensitive compoistion, e.g. with
The compound etc. of aromatic hydroxyl shown in lower formula (I),
R1, R2, R3 represent hydrogen atom or rudimentary alkyl in Formulas I, and R4, R5, R6 represent alkyl or aromatic hydroxyl or hydrogen,
X, Y, Z represent 1~3 integer, the integer that l, m, n are 1~3.Specific example is for example: Japanese Honshu Chemical Ind
Trade name TPPA series commercially available product, does not limit the type and quantity of (E) other additives herein.With the resin of (A) alkali-soluble
Composition is for 100 parts by weight, sensitizer isPreferably
Eurymeric light resistance composition is formed by with viscosity between 5~150cSt according to above-mentioned condition, and preferable viscosity
For 90cSt hereinafter, suitably forming thickness between 6~20 μm of coated film.The semiconductor front end processing procedure generally used according to industry
Board, majority are suitable for spraying and form 5 μm of thickness slim photoresistance films or coated film below, but in the product for needing thick film
The difficulty in production is encountered, often there is a phenomenon where burn in yellow light process.It is found after inventor's research, thick film
(thickness is, for example, the coated film between 6~20 μm) since its thickness is larger, forming mask film, (coated film carries out after being completely dried
Patterning forms mask film) during be not easy drying, therefore in the intense reaction of etch process, the solvent in film is easy
Bumping occurs or burns, and then component contamination problem and product yield is led to problems such as to decline.And needed for reaching
Thickness certainly will need higher viscosity and solid content compared to film, but this really also causes to dry more difficult, spraying unevenness
The problems such as even；If however elongate coating duration, number or drying time, not only need to adjust existing process conditions, cause into
This increase, is likely to therefore cause the decline of yield.And its viscosity of eurymeric light resistance composition provided by the invention is not only
It can be suitably used for existing board and processing procedure, and thickness can also be formed with this condition between 6~20 μm of coated film.
For that can become apparent from the advantage for illustrating this case eurymeric light resistance composition, multiple embodiments presented below, comparative example and
Test result respectively.
The ingredient and ratio of Examples 1 to 6 presented below are as shown in table 1 below, and the ingredient and ratio of comparative example 1~4 are as follows
Shown in table 2.First detect Examples 1 to 6, comparative example 1~4 viscosity out of the ordinary after, Examples 1 to 6, comparative example 1~4 are applied respectively
It is distributed on Photosensing Units and forms coated film, and detect its thickness, carry out patterning after coated film is dry and form mask film, later
Dry ecthing procedure is carried out, then observes and other burns situation.Photosensing Units 10 as shown in Figure 1, substrate 11 (such as Silicon Wafer)
On be formed with element layer 12 (comprising institute it is necessary to electronic building brick and material layers, by taking Photosensing Units as an example, element layer 12 includes
There are implantation region, pixel circuit, colour filter array, interlayer dielectric layer, patterned electrodes etc., since element interior details are not this
Case invention emphasis, therefore shows in detail and explanation are not done, those skilled in the art can apply existing element and process technique simultaneously
Understand its content for being included), and such as lens array 13 etc. is formed thereon, but not limited to this；And region R1 is predetermined
The region of Cutting Road is formed, to separate crystal grain C1 and crystal grain C2.Then as shown in Fig. 2, coated film after patterning is dry with
Mask film 14 is formed, mask film 14 is covered in a part of element layer 12, and unlapped part is region R1, later with mask
Film 14 is that mask is etched processing procedure, removes the element layer 12 in the R1 of region, (carries out dry corrosion using oxygen herein as shown in Figure 3
It carves, but is not limited to this, according to different processing procedures, dry or wet etching can be used, shifting may also can be synchronized in other processing procedures
Except the part substrate 11 in the R1 of region).Mask film 14 is removed later, as shown in Figure 4.In general the program of crystal grain cutting can connect
Using crystal grain saw (for example, diamond saw) remove region R1 in substrate 11, as shown in figure 5, to separate crystal grain C1 and C2；But
Detection to influence testing result the step of avoiding crystal grain saw from removing substrate 11 of remainder, therefore burning situation is carried out at dry
After etch process, before crystal grain saw.In addition, the present invention is illustrated with Photosensing Units as example, but not to limit this
The spirit of invention and application, the present invention can be covered for any semiconductor element.
Table 1
Table 2
As seen from the above table, although 1~3 viscosity of comparative example is extremely close with Examples 1 to 3 respectively, since its is organic molten
Agent contains only low voc solvent, due to a lack of the film that high volatile solvent quickly volatilizees and generates, leads to the sense in rotary coating
Photosensitiveness constituent be easy to get rid of it is flat, therefore its formed coated film film thickness be unable to reach 6 μm.
Therefore, the present invention also provides a kind of Cutting Road forming method simultaneously, includes: (S1) is coated with the eurymeric light of above-mentioned offer
Constituent is hindered on semiconductor element, and wherein the viscosity of eurymeric light resistance composition is between 5~150cSt, and semiconductor element includes
Substrate, and the element layer being formed on substrate；(S2) the eurymeric light resistance composition after patterning is dry forms mask film,
Middle mask film thickness is between 6~20 μm；(S3) processing procedure is etched to semiconductor element using mask film as mask, removes part half
Conductor element；(S4) mask film is removed；And (S5) carries out crystal grain and cuts saw.And since this case eurymeric light resistance composition has fastly
The characteristics such as rapid-curing cutback is dry, quick volatilization, even spread, can form 6~20 μm of thickness of thick film again with low-viscosity, can directly cover
For existing processing procedure and board, it might even be possible to which set is for all types of for the existing board for being used to be formed film
Coating process, such as seam apply processing procedure, spraying processing procedure or spin coating processing procedure.Furthermore it is worth noting that, although the present invention is with Cutting Road
Application note, however, the present invention is not limited thereto are done for forming method；Eurymeric light resistance composition provided by the invention can be adapted for
Any need was formed in the step of photoresistance film, such as formed the etching step of internal connecting layer, the etching step for forming dielectric layer, shape
At the etching step etc. of electrode.
The above described is only a preferred embodiment of the present invention, be not intended to limit the present invention in any form, though
So the present invention has been disclosed as a preferred embodiment, and however, it is not intended to limit the invention, any technology people for being familiar with this profession
Member, without departing from the scope of the present invention, when the method and technique content using the disclosure above make it is a little more
Equivalent embodiment that is dynamic or being modified to equivalent variations, but anything that does not depart from the technical scheme of the invention content, according to the present invention
Technical spirit any simple modification, equivalent change and modification to the above embodiments, still fall within technical solution of the present invention
In the range of.
Claims (10)
1. a kind of eurymeric light resistance composition, which is characterized in that there is the solid of 35wt%~55wt%, between 5~150cSt
Viscosity, suitable for forming thickness between 6~20 μm of coated film, the eurymeric light resistance composition includes:
(A) resin component of alkali-soluble；
(B) two nitrine carboxylate of naphthoquinones；And
(C) organic solvent is made of at least one (C1) high volatile solvent and at least one (C2) low voc solvent；Its
In with the rate of volatilization of butyl acetate be 1, (C1) high volatile solvent have rate of volatilization 1.5~5.0, (C2) is low
Volatile solvent has rate of volatilization 0.2~1.0.
2. eurymeric light resistance composition as described in claim 1, which is characterized in that (C1) high volatile solvent is that carbon number is
Any one of 5 ketones and ethers below or combinations thereof.
3. eurymeric light resistance composition as described in claim 1, which is characterized in that (C1) high volatile solvent accounts for described
(C) the 20%~70% of organic solvent quality.
4. eurymeric light resistance composition as described in claim 1, which is characterized in that (C2) low voc solvent is that boiling point is situated between
In 120 DEG C~160 DEG C of organic solvent.
5. eurymeric light resistance composition as described in claim 1, which is characterized in that the thick film eurymeric light resistance composition it is described
Viscosity is 90cSt or less.
6. eurymeric light resistance composition as described in claim 1, which is characterized in that (C2) low voc solvent accounts for described
(C) the 30%~80% of organic solvent quality.
7. eurymeric light resistance composition as described in claim 1, which is characterized in that the eurymeric light resistance composition also includes:
(D) interfacial agent.
8. thick film eurymeric light resistance composition as described in claim 1, which is characterized in that the eurymeric light resistance composition also wraps
Contain:
(E) other additives, the sensitizer comprising the compound with aromatic hydroxyl shown in lower formula (I), wherein R1, R2,
R3 represents hydrogen atom or rudimentary alkyl, and R4, R5, R6 represent alkyl or aromatic hydroxyl or hydrogen, X, Y, Z represent 1~3 it is whole
Number, the integer that l, m, n are 1~3.
9. a kind of Cutting Road forming method, characterized by comprising:
Eurymeric light resistance composition as described in claim 1 is coated on semiconductor element, forms thickness between 6~20 μm of painting
Cloth film, wherein the eurymeric light resistance composition has solid, the viscosity between 5~150cSt of 35wt%~55wt%, and
The semiconductor element includes substrate, and the element layer being formed on the substrate；
The coated film after patterning is dry, forms mask film；
Processing procedure is etched to the semiconductor element using the mask film as mask, removes part semiconductor element；
Remove the mask film；And
It carries out crystal grain and cuts saw.
10. Cutting Road forming method as claimed in claim 9, which is characterized in that the application step applies processing procedure, spray using seam
Apply processing procedure or spin coating processing procedure.
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| TW107115238A TWI700319B (en) | 2018-05-04 | 2018-05-04 | Positive photosensitive composition and wafer dicing method using the same |
| TW107115238 | 2018-05-04 |
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| CN113652126A (en) * | 2020-05-12 | 2021-11-16 | 彰洋材料股份有限公司 | Composition of strippable protective film and reflective strippable protective film and spray product thereof |
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| TW201946958A (en) | 2019-12-16 |
| TWI700319B (en) | 2020-08-01 |
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