JP4451172B2 - Photoresist composition for liquid crystal display device circuit - Google Patents

Description

  The present invention relates to a photoresist composition for a liquid crystal display device circuit used for the production of a fine circuit such as a liquid crystal display device circuit and a semiconductor integrated circuit, and more particularly, exposure and development two to three times in one exposure and development process. The present invention relates to a photoresist composition for a liquid crystal display device circuit which is effective for obtaining a process progress effect.

  A fine circuit pattern such as a liquid crystal display device circuit or a semiconductor integrated circuit is obtained by uniformly coating or applying a photoresist composition for a liquid crystal display device circuit on an insulating film or a conductive metal film formed on a substrate, and having a predetermined shape. The photoresist composition for a liquid crystal display device circuit coated in the presence of a mask is exposed and developed to form a pattern having a desired shape. Thereafter, the metal film or the insulating film is etched using the patterned photoresist film as a mask, and the remaining photoresist film is removed to form a fine circuit on the substrate. Such a photoresist composition for a liquid crystal display device circuit is classified into a negative type and a positive type depending on the solubility change of the exposed portion.

  The characteristics of the photoresist composition for liquid crystal display device circuits, which are important in practical aspects, are the resist speed of the formed resist film, the development contrast, the resolution, the adhesion to the substrate, the remaining film ratio, and the circuit line width uniformity ( CD uniformity) and convenience of use such as human safety.

  In particular, the characteristic of the photoresist composition effective for obtaining the effect of progressing the exposure process and development process twice or more in one exposure and development process is the residual film thickness uniformity of the half-exposed part.

  Currently, TFTs are mainly used in liquid crystal display device circuits. Such a TFT circuit uniformly coats or applies a photoresist composition for a liquid crystal display device circuit, exposes and develops the coated photoresist composition in the presence of a mask having a predetermined shape, After creating a pattern with the desired shape, the metal film or insulating film is etched using the patterned photoresist film as a mask, and then a series of processes for removing the remaining photoresist film are repeated many times. Although it can be formed, it is a general technique to advance the exposure and development process at least five times in this process (to obtain a TFT circuit by five exposure and development processes is called a 5-Mask process).

  Therefore, the production yield can be increased by reducing the number of times of the exposure and development process, but the residual after development as formed by performing the exposure and development process twice or more in one exposure and development process. Further, by applying a photoresist composition effective for obtaining a multi-layered residual film structure having different photoresist heights, the number of exposure and development processes can be reduced at least once (four exposures). And obtaining a TFT circuit by a development process is called a 4-Mask process). In this way, the photoresist having a special function is not only the development contrast due to the difference in the developing speed between the exposed part and the non-exposed part, which is important in the existing photoresist for liquid crystal display circuit, but also the half-tone part (half-tone part). Part: Remain Film Thickness uniformity is the most important property required by adjusting the double slit interval of Mask and the transmittance, and the part with the intermediate value between the exposure amount of the exposed part and the non-exposed part. is there.

  Photosensitivity refers to the rate at which the solubility of the photoresist for liquid crystal display circuit circuits changes due to exposure, and several exposures are required to generate multiple patterns through repeated processes, or light is a series of lenses and monochromatic filters. This is particularly important in photoresist films that use light of reduced intensity, such as projection exposure techniques that pass through.

  In particular, in order to reduce the long exposure time on the production line due to the large area of the substrate, which is a feature of the thin film transistor liquid crystal display device (hereinafter referred to as TFT-LCD), it is necessary to improve the photosensitive speed. In addition, the photosensitive speed and the remaining film ratio are inversely proportional to each other, and when the photosensitive speed is high, the remaining film ratio tends to decrease.

  The development contrast means the ratio of the film loss amount at a portion exposed by development to the film loss amount at a portion not exposed. Normally, an exposed substrate coated with a photoresist film is continuously developed until the coating on the exposed area is almost completely dissolved and removed, so that development contrast is achieved when the exposed coated area is completely removed. It can be easily determined by measuring the film loss at the unexposed part.

  The resolution of the photoresist film means the ability of the resist film system to reproduce fine circuit lines so as to show a highly sensitive image according to the space interval of the mask used when exposing the resist film.

  In various industrial applications, particularly in the manufacture of liquid crystal display devices and semiconductor circuits, the photoresist film for liquid crystal display device circuits needs to have a resolution that can form a pattern with very fine lines and a space area (10 μm or less). .

  Adhesive strength with various substrates is one of the physical properties required for photoresist compositions for liquid crystal display device circuits. When wet etching a metal film or insulating film, selectivity depending on the presence or absence of patterns in the microcircuit on the substrate It plays a role to increase.

  Most of the photoresist compositions for liquid crystal display devices include a polymer resin, a photosensitive compound and a solvent for forming a photoresist film. Many attempts have been made in the prior art to improve the photosensitivity, development contrast, resolution and human safety of photoresist compositions for liquid crystal display circuits.

  For example, Patent Document 1 discloses the use of a mixture of two phenol formaldehyde novolak resins and a typical photosensitive compound, and Patent Document 2 discloses the use of a phenolic resin and a naphthoquinone diazide photosensitive material in order to increase the photosensitive speed. It is disclosed that an organic acid cyclic anhydride is added to an agent, and Patent Document 3 discloses a novolak resin, an o-quinonediazide photosensitive compound and propylene as a solvent in order to increase the photosensitive speed and improve human safety. The use of glycol alkyl ether acetate is disclosed. Patent Document 4 discloses the use of a method for classifying a novolak resin in order to increase resolution and heat resistance, and the above contents are widely known to those skilled in the art.

  Various solvents have been developed to improve the physical properties and work stability of photoresist compositions for liquid crystal display device circuits. Examples include ethylene glycol monoethyl ether acetate, propylene glycol monoethyl ether acetate, and ethyl lactate. There is.

However, liquid crystal display circuit such as photosensitivity, residual film rate, residual film uniformity in half-exposed area, development contrast, resolution, polymer resin solubility, adhesion to substrate, circuit line width uniformity, etc. A variety of photoresist compositions for liquid crystal display devices suitable for each industrial process have not been developed without sacrificing any one of the preferred characteristics of the photoresist composition for a liquid crystal display. ing.
U.S. Pat. No. 3,666,473 U.S. Pat. No. 4,115,128 U.S. Pat. No. 4,550,069 Japanese Patent No. 189,739

  The present invention takes into account the problems of the prior art as described above, and the photosensitive speed of the photoresist film, the remaining film rate, the remaining film uniformity of the half-exposed portion, the development contrast, the resolution, the circuit line width uniformity, and the substrate An object of the present invention is to provide a photoresist composition for a liquid crystal display device circuit having a novel composition capable of improving the adhesive strength of the liquid crystal display device.

  Another object of the present invention is to provide a semiconductor device manufactured using the photoresist composition.

To achieve the above object, the present invention provides a photoresist composition for a liquid crystal display device circuit comprising a polymer resin, a photosensitive compound, an adhesion enhancer, and an organic solvent.
(A) a novolak resin having a number average molecular weight of 5000 to 9000 having a meta / paracresol content of 50 to 80:50 to 20 parts by weight; (b) a diazide-based photosensitive compound; (c) an adhesion enhancer; d) looking contains an organic solvent, wherein the diazide based photosensitive compound is 2,3,4,4-tetrahydroxy-benzophenone 1,2-naphthoquinonediazide-5-sulfonate and 2,3,4 -1,2-naphthoquinonediazide-5-sulfonate, a mixture of propylene glycol methyl ether acetate (hereinafter referred to as PGMEA) in which the organic solvent is mixed in an amount of 70 to 90:30 to 10 parts by weight; Provided is a photoresist composition for a circuit of a liquid crystal display device , which is a mixture of ethyl methoxyacetate (hereinafter referred to as MMP) .

The photoresist composition of the present invention comprises (a) 15 to 25% by weight of a novolak resin having a number average molecular weight of 6000 to 7500 and having a meta / paracresol content of 50 to 65:50 to 35 parts by weight; (b) 2 , 3,4,4'-Tetrahydroxybenzophenone-1,2-naphthoquinonediazide-5-sulfonate and 2,3,4, -trihydroxybenzophenone-1,2-naphthoquinonediazide-5-sulfonate 4 to 8% by weight of a diazide-based photosensitive compound mixed in a weight ratio of 10 to 40:90 to 60; (c) 0.3 to 1% by weight of an adhesion enhancer; and (d) a mixture of PGMEA and MMP. It is preferable to include 65 to 90% by weight of organic solvent mixed in a ratio of 75 to 90:25 to 10 parts by weight.

  The present invention also provides a semiconductor device manufactured by coating a photoresist composition of the base material on a metal film or an insulating film, and then exposing and developing to form a photoresist pattern, etching and stripping. . The semiconductor element is preferably a TFT-LCD.

  The photoresist composition for a liquid crystal display device circuit of the present invention has excellent photosensitive speed and residual film ratio, and the residual film uniformity of half-exposed areas, resolution, development contrast, heat resistance, adhesion and solubility in strippers. Since it is excellent, it can be easily applied to an actual industrial site and the working environment can be changed well.

  Hereinafter, the present invention will be described in detail.

  The present invention uses a novolak resin produced by adjusting the content of meta- and para-cresol as a polymer resin, and the physical properties such as the photosensitivity of the photoresist film, the remaining film ratio, the uniformity of the remaining film in the half-exposed area, and the adhesive strength The present invention relates to a photoresist composition for a circuit of a liquid crystal display device that can greatly improve the resistance.

  Polymer resins that can be used for producing the photoresist composition for a liquid crystal display device circuit are widely known in the art, and the present invention uses the above-mentioned novolak resin among them. The novolak resin is a polymer synthesized by reacting an aromatic alcohol such as meta and / or paracresol with formaldehyde.

  The properties of the novolak resin, such as the photosensitivity and the remaining film ratio, and the uniformity of the remaining film in the half-exposed portion, are affected by the mixing ratio of the meta / paracresol polymer. Also, in the photoresist composition for liquid crystal display device circuits, pattern heat flow occurs after the hard baking process. Such heat flow can be achieved by appropriately adjusting the ratio of metacresol and paracresol or the molecular weight of the polymer. If the substrate is treated with gas plasma, the line width and inclination of the substrate can be adjusted.

Accordingly, the photoresist composition of the present invention, (a) Number polymer resin comprises a novolak resin, more preferably prepared at a ratio of parts by weight of meta / content of para-cresol 50 to 80:50 to 20 A novolak resin having an average molecular weight of 5000 to 9000 is used. At this time, if the content of metacresol exceeds the above range, the photosensitivity increases and the remaining film rate decreases rapidly. If the content of paracresol exceeds the above range, the photosensitivity decreases.

  The content of the polymer resin used in the present invention is 5 to 30% by weight, and if the content of the polymer resin is less than 5% by weight, the viscosity is too low and there is a problem in coating with a desired thickness. If it exceeds 30% by weight, the viscosity is too high, so that there is a problem that it is difficult to uniformly coat the substrate.

  The (b) photosensitive compound is a 2,3,4-trihydroxybenzophenone-1,2 produced by esterification of trihydroxybenzophenone and 2-diazo-1-naphthol-5-sulfonic acid as a diazide compound. 2,3,4,4′-Tetrahydroxybenzophenone-1, produced by esterification of 2-naphthoquinonediazide-5-sulfonate, tetrahydroxybenzophenone and 2-diazo-1-naphthol-5-sulfonic acid 2-Naphthoquinonediazide-5-sulfonate can be used alone or in combination.

  The diazide photosensitive compound can be produced by reacting polyhydroxybenzophenone with a diazide compound such as 1,2-naphthoquinonediazide and 2-diazo-1-naphthol-5-sulfonic acid.

  In the present invention, two methods for adjusting the photosensitive speed using the photosensitive compound include a method of adjusting the amount of the photosensitive compound, 2,3,4-trihydroxybenzophenone, or 2,3,3. There is a method for adjusting the degree of esterification of 4,4′-tetrahydroxybenzophenone and 2-diazo-1-naphthol-5-sulfonic acid.

  More preferably, the photosensitive compound is 2,3,4,4′-tetrahydroxybenzophenone-1,2-naphthoquinonediazide-5-sulfonate and 2,3,4-trihydroxybenzophenone-1,2-naphtho. It is preferable to include a mixture of quinonediazide-5-sulfonate, and the mixing ratio of the two compounds is 10 to 60:90 to 40 parts by weight.

  The photosensitive compound content is 2 to 10% by weight. If the photosensitive compound content is less than 2% by weight, the photosensitive speed is too high, and there is a problem that the remaining film ratio is drastically reduced. If the ratio exceeds 50%, the photosensitive speed becomes too slow.

  In the photoresist composition of the present invention, (c) an adhesion enhancer is used to improve adhesion characteristics of the coated or applied photoresist to the lower film. The adhesion enhancer is preferably a compound in which a plurality of amino groups are substituted with a general melamine derivative, and more preferably a compound in which 3 to 6 amino groups are substituted on the melamine derivative. Methyl melamine can be used.

  If the content of the adhesion enhancer is 0.1 to 1% by weight, and the content of the adhesion enhancer is less than 0.1% by weight, the adhesion characteristics between the photoresist and the lower film are deteriorated, which causes a problem in the etching process. If the amount exceeds 1% by weight, the strip process for removing the photoresist becomes difficult.

  The photoresist composition of the present invention contains the organic solvent (d), preferably 60 to 90% by weight of the organic solvent. Specifically, the organic solvent can be used by using PGMEA alone or by mixing PGMEA and EL, MMP, PGME, etc., more preferably PGMEA and MMP in a mixing ratio of 70 to 90:30 to 10. Mix by weight.

  In addition, the liquid crystal display device circuit photoresist composition of the present invention additionally includes additives such as colorants, dyes, anti-scratch agents, plasticizers, adhesion promoters, and surfactants as necessary. By covering the substrate, the performance can be improved by the characteristics of the individual process.

  In addition, the present invention can manufacture a semiconductor element using the photoresist composition for a liquid crystal display device manufactured as described above. As a preferred example of the semiconductor element, it can be used in the manufacturing process of a liquid crystal display device circuit as follows.

  In the present invention, the photoresist composition for a liquid crystal display device circuit is applied to a substrate by a usual method including dipping, spraying, rotation, and spin coating. For example, in the case of spin coating, a coating having a desired thickness can be formed by appropriately changing the solid content of the photoresist solution for a liquid crystal display device circuit according to the type and method of the spinning device.

  The substrates include silicon, aluminum, indium tin oxide (ITO), indium zinc oxide (IZO), molybdenum, chromium, silicon dioxide, doped silicon dioxide, silicon nitride, tantalum, copper, polysilicon, ceramic, aluminum / copper Those composed of a mixture and various polymerizable resins are included.

  The photoresist composition for a liquid crystal display device circuit coated on the substrate by the above method is heated at a temperature of 80 to 130 ° C. This is called a soft baking process. Such heat treatment is performed in order to evaporate the solvent without thermally decomposing solid components in the photoresist composition for liquid crystal display device circuits. In general, it is preferable to minimize the concentration of the solvent by a soft baking process. Therefore, in such a heat treatment, a thin coating film of a photoresist composition for a liquid crystal display device circuit having a thickness of 3 μm or less is obtained by evaporating most of the solvent. Continue until it remains on the substrate.

  Next, the substrate on which the photoresist film is formed is exposed to light, particularly ultraviolet rays, using an appropriate mask or a template, thereby forming a pattern of a desired form. Next, the exposed substrate is sufficiently immersed in an alkaline developing aqueous solution, and then left to stand until all or most of the photoresist film exposed to light is dissolved. As the alkaline developing aqueous solution, an aqueous solution containing an alkali hydroxide, ammonium hydroxide or tetramethylammonium hydroxide can be used.

  In addition, the present invention can improve the adhesion and chemical resistance of the photoresist film by removing the substrate from which the exposed portion has been dissolved and removed from the developer, and then heat-treating it again. This is called a hard baking process. Such heat treatment is performed at a temperature below the softening point of the photoresist film, and preferably at a temperature of 90 to 140 ° C.

  In this way, the exposed substrate portion is processed by treating the developed substrate with a corrosive solution or gas plasma, and at this time, the unexposed portion of the substrate is protected by the photoresist film. After processing the substrate in this way, a fine circuit pattern is formed on the substrate by removing the photoresist film with an appropriate stripper.

  The present invention will be described in more detail through the following examples and comparative examples. However, the following examples are only for illustrating the present invention, and the present invention is not limited to the following examples.

(Synthesis of meta / paranovolak resin)
[Comparative Synthesis Example 1]
An overhead stirrer was charged with 40 g of metacresol, 60 g of paracresol, 65 g of formaldehyde, and 0.5 g of oxalic acid, and stirred to produce a homogeneous mixture. The reaction mixture was heated at 95 ° C. and this temperature was maintained for 4 hours. The reflux condenser was replaced with a distillation apparatus, and the temperature of the reaction mixture was distilled at 110 ° C. for 2 hours. Vacuum distillation was performed at 180 ° C. for 2 hours to distill off the remaining monomers, and the molten novolak resin was cooled to room temperature. The number average molecular weight was measured by GPC to obtain a novolak resin having a molecular weight of 4800 (polystyrene basis).

[Comparative Synthesis Example 2]
Although synthesized by the same method as in Comparative Synthesis Example 1, a novolak resin having a number average molecular weight of 9600 was obtained using 85 g of metacresol, 15 g of paracresol, 65 g of formaldehyde, and 0.5 g of oxalic acid (polystyrene basis). .

[Synthesis Example 1]
Although synthesized by the same method as in Comparative Synthesis Example 1, 55 g of metacresol, 45 g of paracresol, 65 g of formaldehyde, and 0.5 g of oxalic acid were used to obtain a novolak resin having a number average molecular weight of 6300 (polystyrene basis). .

[Example 1]
5.5 g of the photosensitizer, 20 g of the novolak resin obtained in Synthesis Example 1 above, 0.5 g of hexamethoxymethylmelamine as the adhesion enhancer, and 56 g of PGMEA and 14 g of MMP as organic solvents were added and stirred at room temperature at 40 rpm. A circuit photoresist composition was prepared. The sensitizers are 2,3,4-trihydroxybenzophenone-1,2-naphthoquinonediazide-5-sulfonate and 2,3,4,4′-tetrahydroxybenzophenone-1,2-naphthoquinonediazide-5-sulfone. A mixture of 9/1 acid salt was used.

  The liquid crystal display device photoresist composition manufactured as described above is dropped on a 0.7T (thickness, 0.7 mm) glass substrate and rotated at a constant rotation speed, and then the substrate is heated at 110 ° C. for 90 minutes. Heat drying was performed to form a film film having a thickness of 2.40 μm. A mask having a predetermined shape is mounted on the film film, and then irradiated with ultraviolet light, immersed in a 2.38% by weight aqueous solution of tetramethylammonium hydroxide for 70 seconds, and a portion exposed to the ultraviolet light is removed to form a photoresist pattern. Formed. Such a pattern was formed on Cr glass, and this was treated with a corrosive solution to measure the length of the corroded Cr not exposed to the corrosive solution.

[Comparative Example 1]
Although manufactured by the same method as in Example 1, a novolak resin obtained in Comparative Synthesis Example 1 was used to manufacture a photoresist composition for a liquid crystal display device circuit.

[Comparative Example 2]
Although manufactured by the same method as in Example 1, a novolak resin obtained in Comparative Synthesis Example 2 was used to manufacture a photoresist composition for a liquid crystal display device circuit.

[Comparative Example 3]
Although produced by the same method as in Example 1, 2,3,4-trihydroxybenzophenone-1,2-naphthoquinonediazide-5-sulfonate was used alone using the novolak resin obtained in Synthesis Example 1. A photoresist composition for a liquid crystal display device circuit was produced.

[Comparative Example 4]
Although manufactured by the same method as in Example 1, 2,3,4,4′-tetrahydroxybenzophenone-1,2-naphthoquinonediazide-5-sulfonate is used using the novolak resin obtained in Synthesis Example 1. Was used alone to produce a photoresist composition for liquid crystal display device circuits.

[Test example]
The physical properties of the photoresist compositions prepared in Example 1 and Comparative Examples 1 to 4 were measured by the following method. The results are shown in Table 1 below.

A. Photosensitivity and remaining film rate The photosensitivity is obtained by measuring the energy at which a film is completely dissolved under a constant development condition depending on the exposure energy. After exposure to light and development by performing soft baking at 110 ° C., Equation 1 And 2 were used to measure the remaining film ratio.
[Formula 1]
Initial film thickness = loss thickness + residual film thickness
[Formula 2]
Residual film rate = (Residual film thickness / Initial film thickness)
B. Residual film uniformity in half-exposed area The degree of uniformity of the residual film thickness (RFT) remaining in the semi-exposed area even after the development process was measured by the following Equation 3 by the double slit interval of the mask pattern.
[Formula 3]
ΔRFT (Å) = | RFT (avg.) − RFT (x) |
In the above equation, RFT (avg.) Is the average remaining film thickness of the entire half-exposed area, and RFT (x) is the remaining film thickness of the semi-exposed area at an arbitrary position.

C. Heat resistance Tg (Glass Transition Temperature) was measured by DSC.

D. Adhesive A photoresist film manufactured with a photoresist composition for a liquid crystal display device circuit on glass coated with Cr has a desired pattern (fine line width) obtained in a development process, and then the exposed portion of Cr is applied. In order to remove it, it was treated with a corrosive solution, and the adhesion was tested by measuring the length of the corroded Cr not exposed to the corrosive solution.

前記表１の結果から分かるように、実施例１のフォトレジスト組成物によって製造されたフォトレジスト膜の半露光部残膜均一度は従来法による比較例１乃至４と比較して非常に優れていることが分かる。

As can be seen from the results in Table 1, the uniformity of the half-exposed portion residual film of the photoresist film manufactured by the photoresist composition of Example 1 is very excellent as compared with Comparative Examples 1 to 4 by the conventional method. I understand that.

  Further, it can be seen that the photosensitive energy of the photoresist film manufactured by the photoresist composition of Example 1 has a high value of the residual film ratio at the same level as compared with Comparative Examples 1 to 4 by the conventional method.

  In addition, the photoresist film manufactured using the photoresist composition for a liquid crystal display device circuit according to the present invention is a residue of the photoresist for the liquid crystal display device circuit than the photoresist film manufactured using the conventional photoresist composition for a liquid crystal display device circuit. It can be seen that many films remain and the physical properties as a photoresist film are superior to those of the conventional comparative example.

  Furthermore, as shown in Table 1 above, the photoresist film manufactured with the photoresist composition of Example 1 has improved adhesion in the hard baking process after obtaining a desired pattern (fine line width) in the development process. And you can expect changes in the pattern profile.

Claims (7)

In a photoresist composition for a liquid crystal display device circuit comprising a polymer resin, a photosensitive compound, an adhesion enhancer and an organic solvent,
(A) a novolak resin having a number average molecular weight of 5000 to 9000 having a meta / paracresol content of 50 to 80:50 to 20 parts by weight; (b) a diazide-based photosensitive compound; (c) an adhesion enhancer; viewing including the d) organic solvent,
The diazide-based photosensitive compound includes 2,3,4,4′-tetrahydroxybenzophenone-1,2-naphthoquinonediazide-5-sulfonate and 2,3,4-trihydroxybenzophenone-1,2-naphthoquinonediazide— A mixture of 5-sulfonates,
The organic solvent is a mixture of propylene glycol methyl ether acetate (hereinafter referred to as PGMEA) and ethyl 2-methoxyacetate (hereinafter referred to as MMP) mixed in 70 to 90:30 to 10 parts by weight. Photoresist composition for liquid crystal display device circuit. The photoresist composition for a liquid crystal display device circuit comprises (a) 5 to 30% by weight of a novolak resin having a number average molecular weight of 5000 to 9000; (b) 2 to 10% by weight of a diazide-based photosensitive compound; (c) an adhesion enhancer 0. The photoresist composition for a liquid crystal display device circuit according to claim 1, comprising: 1 to 1% by weight; and (d) 60 to 90% by weight of an organic solvent. 2,3,4,4′-tetrahydroxybenzophenone-1,2-naphthoquinonediazide-5-sulfonate and 2,3,4, -trihydroxybenzophenone-1,2-naphthoquinonediazide-5-sulfonate 2. The photoresist composition for a liquid crystal display device circuit according to claim 1 , wherein the mixing ratio is 10 to 60:90 to 40 parts by weight.   The photoresist composition for a liquid crystal display device circuit according to claim 1, wherein the adhesion enhancing agent is a compound in which 3 to 6 amino groups are substituted on a melamine derivative. (A) 15 to 25% by weight of a novolak resin having a number average molecular weight of 6000 to 7500 in which the content of meta / paracresol is 50 to 65:50 to 35 parts by weight; (b) 2,3,4,4′-tetra The mixing ratio of hydroxybenzophenone-1,2-naphthoquinonediazide-5-sulfonate to 2,3,4, -trihydroxybenzophenone-1,2-naphthoquinonediazide-5-sulfonate is 10 to 40:90 to 60 4 to 8% by weight of a diazide-based photosensitive compound mixed in parts by weight; (c) an adhesion enhancer of 0.3 to 1% by weight; and (d) a mixing ratio of PGMEA and MMP of 75 to 90:25 to 10 2. The photoresist composition for a liquid crystal display device circuit according to claim 1, comprising 65 to 90 wt% of an organic solvent mixed in an amount of 1 wt.   The photoresist composition according to claim 1 is manufactured by coating a metal film or an insulating film, and then exposing and developing to form a photoresist pattern, etching and stripping. Semiconductor element. The semiconductor device according to claim 6 , wherein the semiconductor device is a TFT-LCD.