CN110429822A - A kind of T-type LLC resonant converter and its control method - Google Patents
A kind of T-type LLC resonant converter and its control method Download PDFInfo
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- CN110429822A CN110429822A CN201910724171.1A CN201910724171A CN110429822A CN 110429822 A CN110429822 A CN 110429822A CN 201910724171 A CN201910724171 A CN 201910724171A CN 110429822 A CN110429822 A CN 110429822A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
- H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
- H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
- H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
- H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/33569—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having several active switching elements
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0048—Circuits or arrangements for reducing losses
- H02M1/0054—Transistor switching losses
- H02M1/0058—Transistor switching losses by employing soft switching techniques, i.e. commutation of transistors when applied voltage is zero or when current flow is zero
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Dc-Dc Converters (AREA)
Abstract
The present invention provides a kind of T-type LLC resonant converter and its control method, direct current input side is two capacitor series connection, connects resonant cavity by T-type switching network, resonant cavity connects transformer primary side, and transformer secondary connects rectification circuit and output capacitance and load；By the way that auxiliary MOS transistor is added, it can be realized the insertion Vin/2 state in resonant cavity input voltage, reduce the fundamental wave virtual value of resonant cavity input voltage, lower gain can be obtained under same switching frequency；Broader gain ranging can be can be realized in same switching frequency range；It is open-minded that all metal-oxide-semiconductors of primary side can be realized no-voltage, and secondary side diode can realize ZCS in wider range.
Description
Technical field
The present invention relates to converters field, especially a kind of LLC resonant converter and its control method.
Background technique
LLC resonant converter has high efficiency, the significant advantages such as high power density, therefore has obtained very extensive answer
With.Traditional LLC controlled resonant converter uses frequency modulation control (PFM), i.e., the gain of converter is controlled by control switch frequency, only
There is one control freedom degree of switching frequency.After limiting switching frequency range, the gain ranging of converter is just defined.Unique control
The circuit structure and control method of freedom degree processed limit the gain ranging of LLC resonant converter.Traditional LLC is higher in order to realize
Efficiency need to increase magnetizing inductance, and then reduce the loss of exciting current bring, but with the increase of magnetizing inductance, open
The range for closing frequency can become very wide, and the increase of switching frequency range will lead to LLC transformer and be difficult to realize optimal design, transformation
The iron loss and copper loss of device increase, and efficiency reduces.Need to reduce the range of switching frequency in order to facilitate LLC design of transformer,
This requires magnetizing inductance can not ether it is big, lesser magnetizing inductance will lead to again exciting current loss increase, therefore tradition
LLC is difficult to realize the equilibrium between the loss of exciting current bring and design of transformer optimization.In addition to this, when input electricity
When pressure is greater than voltage rating, in order to realize that pressure stabilizing exports, the switching frequency of converter needs to be greater than resonance frequency, at this time secondary side two
Pole pipe cannot achieve ZCS (zero-current switching), and turn-off power loss not can avoid, this just further limits traditional LLC converter efficiency
Further increase.
Summary of the invention
For overcome the deficiencies in the prior art, the present invention provides a kind of T-type LLC resonant converter and its control method, In
In same switching frequency range, broader gain ranging can be realized.
The technical solution adopted by the present invention to solve the technical problems is:
A kind of T-type LLC resonant converter, direct current input side are two capacitor series connection, connect resonance by T-type switching network
Chamber, resonant cavity connect transformer primary side, and transformer secondary connects rectification circuit and output capacitance and load；
The T-type switching network includes first capacitor C1, the second capacitor C2, the first auxiliary MOS transistor S1, the second auxiliary MOS
Pipe S2, the first metal-oxide-semiconductor Q1 and the second metal-oxide-semiconductor Q2, wherein the positive bus-bar of one end of first capacitor C1 and input voltage connects, separately
One end is connect with the second capacitor C2, and the other end of the second capacitor C2 and the negative busbar of input voltage connect；First capacitor C1 and
One end of two capacitor C2 connections connects the drain D of the first auxiliary MOS transistor S1, the source S of the first auxiliary MOS transistor S1 and the second auxiliary
The source S of metal-oxide-semiconductor S2 is connected, and the drain D of the second auxiliary MOS transistor S2 is connected with the source S of the first metal-oxide-semiconductor Q1, the first MOS
The source S of pipe Q1 is connected D with the drain electrode of the second metal-oxide-semiconductor Q2, the drain D and the positive bus-bar phase of input voltage of the first metal-oxide-semiconductor Q1
Connection, the drain D of the second metal-oxide-semiconductor Q2 are connected with the negative busbar of inlet highway.
The resonant cavity includes resonant capacitance Cr, resonant inductance Lr and magnetizing inductance Lm, the one end resonant capacitance Cr and metal-oxide-semiconductor
The source S of Q1 is connected, and the other end of resonant capacitance Cr is connect with resonant inductance Lr, the other end and magnetizing inductance of resonant inductance Lr
One end of Lm connects, and the magnetizing inductance Lm other end connects the source S of metal-oxide-semiconductor Q2；Magnetizing inductance Lm is connect with resonant inductance Lr
One end is connected with one end of transformer primary side, and the other end of magnetizing inductance Lm and the other end of transformer primary side are connected with each other,
The both ends magnetizing inductance Lm connect transformer both ends.
The transformer primary side is the side where input voltage, and transformer secondary is one where output voltage
Side, transformer T totally five terminals are separately connected primary side pair side, and primary side is there are two terminal, and there are three terminal, transformer pairs on secondary side
While being made of two windings, two windings are connected to one piece, so there are three terminals, two winding parts interconnected are
The one end at the midpoint on transformation pair side, transformer secondary winding is connect with first diode D1 anode, transformer secondary winding it is another
One end is connect with the anode of the second diode D2, the cathode connection of first diode D1 and the second diode D2, first diode
D1 and the connection of the second diode D2 cathode connected jointly and the anode of output capacitance, the anode of output capacitance connect output simultaneously
One end of load resistance, the negative terminal of output capacitance and the midpoint of transformer connect, while the negative terminal and load resistance of output capacitance
The other end connection.
When the first metal-oxide-semiconductor Q1 conducting, resonant cavity input voltage is input voltage vin；When the second metal-oxide-semiconductor Q2 conducting,
Resonant cavity input voltage is 0；When the first metal-oxide-semiconductor Q1 and the second metal-oxide-semiconductor Q2 are simultaneously turned off, and the first auxiliary MOS transistor S1 and
When two auxiliary MOS transistor S2 are simultaneously turned on, resonant cavity input voltage is the half Vin/2 of input voltage.
The present invention also provides be related to the control method of T-type LLC resonant converter, specific steps are as follows:
Second metal-oxide-semiconductor Q2 and the second auxiliary MOS transistor S2 is opened and resonance current is negative as original state, at this time resonance
Chamber input voltage is 0, turns off the second metal-oxide-semiconductor Q2, the parasitic diode and second of the resonance current change of current to the first auxiliary MOS transistor S1
Auxiliary MOS transistor S2, resonant cavity input voltage are Vin/2, and the first auxiliary MOS transistor S1 no-voltage is open-minded, turn off the second auxiliary MOS transistor
S2, the resonance current change of current to the first metal-oxide-semiconductor Q1 parasitic diode, resonant cavity input voltage are Vin, the first metal-oxide-semiconductor Q1 no-voltage
Open-minded, resonance current commutation, resonance current is positive, the first metal-oxide-semiconductor Q1 shutdown, the resonance current change of current to the first auxiliary MOS transistor S1
With the parasitic diode of the second auxiliary MOS transistor S2, resonant cavity input voltage is Vin/2, and the second auxiliary MOS transistor S2 no-voltage is opened
Logical, the first auxiliary MOS transistor S1 shutdown, the resonance current change of current to the second metal-oxide-semiconductor Q2 parasitic diode, resonant cavity input voltage is 0,
Second metal-oxide-semiconductor Q2 no-voltage is open-minded, completes a circulation；In the above-mentioned course of work, the first metal-oxide-semiconductor of primary side Q1, the second metal-oxide-semiconductor
Q2, S1, that no-voltage may be implemented in the second auxiliary MOS transistor S2 is open-minded.
The present invention compared with the prior art, the beneficial effects of the present invention are:
(1) it by the way that the first auxiliary MOS transistor S1 and the second auxiliary MOS transistor S2 is added, can be realized in resonant cavity input voltage
Middle insertion Vin/2 state reduces the fundamental wave virtual value of resonant cavity input voltage, can obtain under same switching frequency lower
Gain.
(2) broader gain ranging can be can be realized in same switching frequency range.
(3) all metal-oxide-semiconductors of primary side can be realized no-voltage and open (ZVS), and secondary side diode (or synchronous rectifier) can
ZCS is realized in wider range.
Detailed description of the invention
Fig. 1 is T-type LLC resonant converter circuit topology figure of the invention.
Fig. 2 is the exemplary operation waveform diagram of converter of the invention in resonant frequency point.
Specific embodiment
Present invention will be further explained below with reference to the attached drawings and examples.
As shown in Figure 1, a kind of T-type LLC resonant converter, direct current input side is two capacitor series connection, switchs net by T-type
Network connects resonant cavity, and resonant cavity connects transformer primary side, and transformer secondary connects rectification circuit and output capacitance and load；
The T-type switching network includes first capacitor (C1), the second capacitor (C2), the first auxiliary MOS transistor (S1), second auxiliary
Metal-oxide-semiconductor (S2), the first metal-oxide-semiconductor (Q1) and the second metal-oxide-semiconductor (Q2) are helped, wherein one end of first capacitor (C1) and input voltage
Positive bus-bar connection, the other end are connect with the second capacitor (C2), and the other end of the second capacitor (C2) and the negative busbar of input voltage connect
It connects；The drain electrode (D) for one end connection the first auxiliary MOS transistor (S1) that first capacitor (C1) is connect with the second capacitor (C2), first is auxiliary
The source electrode (S) of metal-oxide-semiconductor (S1) is helped to be connected with the source electrode (S) of the second auxiliary MOS transistor (S2), the leakage of the second auxiliary MOS transistor (S2)
Pole (D) is connected with the source electrode (S) of the first metal-oxide-semiconductor (Q1), the leakage of the source electrode (S) and the second metal-oxide-semiconductor (Q2) of the first metal-oxide-semiconductor (Q1)
Pole is connected (D), and the drain electrode (D) of the first metal-oxide-semiconductor (Q1) is connected with the positive bus-bar of input voltage, the leakage of the second metal-oxide-semiconductor (Q2)
(D) is connected with the negative busbar of inlet highway for pole.
The resonant cavity includes resonant capacitance Cr, resonant inductance Lr and magnetizing inductance Lm, because of resonant capacitance and resonance electricity
Sense, magnetizing inductance is nonpolarity, therefore only defines one end and the other end.Source electrode (S) phase of the one end resonant capacitance Cr and metal-oxide-semiconductor Q1
Even, the other end of resonant capacitance Cr is connect with resonant inductance Lr, and the other end of resonant inductance Lr and one end of magnetizing inductance Lm connect
It connects, the magnetizing inductance Lm other end connects the source electrode (S) of metal-oxide-semiconductor Q2.Magnetizing inductance Lm and the one end connecting resonant inductance Lr and change
One end of depressor primary side is connected, and the other end of magnetizing inductance Lm and the other end of transformer primary side are connected with each other, due to transformation
The voltage that device primary side is added on two terminals is alternating voltage, therefore does not need to define the terminal position of transformer primary side, is encouraged
Magnetoelectricity sense both ends connect transformer both ends.
The transformer primary side is the side where input voltage, and transformer secondary is one where output voltage
Side, totally five terminals are separately connected primary side pair side to transformer (T), and primary side is there are two terminal, and there are three terminal, transformer pairs on secondary side
While being made of two windings, two windings are connected to one piece, so there are three terminals, two winding parts interconnected are
The midpoint on transformation pair side, two windings are in addition to the both ends in addition to midpoint that the part at midpoint is transformer secondary winding, transformation
One end of device vice-side winding is connect with first diode (D1) anode, the other end of transformer secondary winding and the second diode
(D2) anode connection, first diode (D1) are connected with the cathode of the second diode (D2), first diode (D1) and second
Diode (D2) cathode connected jointly and the anode of output capacitance connect, and the anode of output capacitance connects output loading electricity simultaneously
The midpoint of one end of resistance, the negative terminal of output capacitance and transformer connects, while the negative terminal of output capacitance and load resistance is another
End connection.
When the first metal-oxide-semiconductor (Q1) conducting, resonant cavity input voltage is input voltage (Vin)；When the second metal-oxide-semiconductor (Q2) is led
When logical, resonant cavity input voltage is 0；When the first metal-oxide-semiconductor (Q1) and the second metal-oxide-semiconductor (Q2) simultaneously turn off, and the first auxiliary MOS
When pipe (S1) and the second auxiliary MOS transistor (S2) are simultaneously turned on, resonant cavity input voltage is the half (Vin/2) of input voltage.
Zero vector is introduced by using T-type switching network, lower gain can be obtained under same switching frequency.It compares
In traditional LLC converter, introduces zero vector and LLC converter is made not need very wide switching frequency range, by introducing null vector
Amount can reduce the gain of resonant cavity, so that LLC is not needed to increase frequency on a large scale and can be reduced resonant cavity gain, in turn
Reduce switching frequency range, so that the design pressure of LLC transformer reduces.In addition to this, when input voltage is greater than voltage rating
When, even if making switching frequency still be able to realize resonant cavity less than 1, because of switch less than resonance frequency by introducing zero vector
Frequency is less than resonance frequency, even if this also can be realized secondary side diode when allowing for input voltage greater than voltage rating
The efficiency of ZCS, converter greatly improve.By control switch frequency and zero two freedom degrees of appropriate width, can significantly widen
The gain ranging of LLC resonant converter improves the efficiency of control flexibility and converter.
The control method of T-type LLC resonant converter are as follows:
Second metal-oxide-semiconductor (Q2) and the second auxiliary MOS transistor (S2) are opened and resonance current is negative as original state, at this time
Resonant cavity input voltage is 0, is turned off the second metal-oxide-semiconductor (Q2), two pole of parasitism of the resonance current change of current to the first auxiliary MOS transistor (S1)
Pipe and the second auxiliary MOS transistor (S2), resonant cavity input voltage are Vin/2, and the first auxiliary MOS transistor (S1) no-voltage is open-minded, shutdown
Second auxiliary MOS transistor (S2), the resonance current change of current to the first metal-oxide-semiconductor (Q1) parasitic diode, resonant cavity input voltage are Vin,
First metal-oxide-semiconductor (Q1) no-voltage is open-minded, and resonance current commutation, resonance current is positive, the first metal-oxide-semiconductor (Q1) shutdown, resonance current
The change of current to the first auxiliary MOS transistor (S1) and the second auxiliary MOS transistor (S2) parasitic diode, resonant cavity input voltage be Vin/2,
Second auxiliary MOS transistor (S2) no-voltage is open-minded, the first auxiliary MOS transistor (S1) shutdown, the resonance current change of current to the second metal-oxide-semiconductor (Q2)
Parasitic diode, resonant cavity input voltage are 0, and the second metal-oxide-semiconductor (Q2) no-voltage is open-minded, complete a circulation；In above-mentioned work
In the process, the first metal-oxide-semiconductor of primary side (Q1), the second metal-oxide-semiconductor (Q2), S1, the second auxiliary MOS transistor (S2) may be implemented no-voltage and open
It is logical.
The working mechanism of T-type LLC resonant converter is: when the first metal-oxide-semiconductor (Q1) conducting, resonant cavity input voltage is
Input voltage (Vin)；When the second metal-oxide-semiconductor (Q2) conducting, resonant cavity input voltage is 0；As the first metal-oxide-semiconductor (Q1) and second
Metal-oxide-semiconductor (Q2) simultaneously turns off, and when the first auxiliary MOS transistor (S1) and the second auxiliary MOS transistor (S2) are simultaneously turned on, resonant cavity is defeated
Enter the half (Vin/2) that voltage is input voltage.
According to fig. 2 as can be seen that resonant cavity input voltage is three level (Vin, Vin/2,0)；By being inputted in resonant cavity
It is inserted into Vin/2 state in voltage, reduces the fundamental wave virtual value of resonant cavity input voltage, the pressure regulation model of controlled resonant converter can be widened
It encloses.
Claims (2)
1. a kind of T-type LLC resonant converter, it is characterised in that:
The T-type LLC resonant converter, direct current input side are two capacitor series connection, connect resonant cavity by T-type switching network,
Resonant cavity connects transformer primary side, and transformer secondary connects rectification circuit and output capacitance and load；
The T-type switching network include first capacitor C1, the second capacitor C2, the first auxiliary MOS transistor S1, the second auxiliary MOS transistor S2,
First metal-oxide-semiconductor Q1 and the second metal-oxide-semiconductor Q2, wherein the positive bus-bar of one end of first capacitor C1 and input voltage connect, the other end with
Second capacitor C2 connection, the other end of the second capacitor C2 and the negative busbar of input voltage connect；First capacitor C1 and the second capacitor
One end of C2 connection connects the drain D of the first auxiliary MOS transistor S1, the source S and the second auxiliary MOS transistor of the first auxiliary MOS transistor S1
The source S of S2 is connected, and the drain D of the second auxiliary MOS transistor S2 is connected with the source S of the first metal-oxide-semiconductor Q1, the first metal-oxide-semiconductor Q1
Source S be connected with the drain electrode of the second metal-oxide-semiconductor Q2 D, the drain D of the first metal-oxide-semiconductor Q1 is connected with the positive bus-bar of input voltage,
The drain D of second metal-oxide-semiconductor Q2 is connected with the negative busbar of inlet highway；
The resonant cavity includes resonant capacitance Cr, resonant inductance Lr and magnetizing inductance Lm, and the one end resonant capacitance Cr is with metal-oxide-semiconductor Q1's
Source S is connected, and the other end of resonant capacitance Cr is connect with resonant inductance Lr, and the other end of resonant inductance Lr is with magnetizing inductance Lm's
One end connection, the magnetizing inductance Lm other end connect the source S of metal-oxide-semiconductor Q2；One end that magnetizing inductance Lm is connect with resonant inductance Lr
It is connected with one end of transformer primary side, the other end of magnetizing inductance Lm and the other end of transformer primary side are connected with each other, excitation
The both ends inductance Lm connect transformer both ends；
The transformer primary side is the side where input voltage, and transformer secondary is the side where output voltage, is become
Depressor T totally five terminals are separately connected primary side pair side, and primary side is there are two terminal, and there are three terminals on secondary side, and transformer secondary is by two
A winding composition, two windings are connected to one piece, so there are three terminals, two winding parts interconnected are transformation pair
The one end at the midpoint on side, transformer secondary winding is connect with first diode D1 anode, the other end of transformer secondary winding with
The anode of second diode D2 connects, the cathode connection of first diode D1 and the second diode D2, first diode D1 and the
The two diode D2 cathodes connected jointly and the anode of output capacitance connect, and the anode of output capacitance connects output loading electricity simultaneously
The midpoint of one end of resistance, the negative terminal of output capacitance and transformer connects, while the negative terminal of output capacitance and load resistance is another
End connection；
When the first metal-oxide-semiconductor Q1 conducting, resonant cavity input voltage is input voltage vin；When the second metal-oxide-semiconductor Q2 conducting, resonance
Chamber input voltage is 0；When the first metal-oxide-semiconductor Q1 and the second metal-oxide-semiconductor Q2 are simultaneously turned off, and the first auxiliary MOS transistor S1 and second is auxiliary
When metal-oxide-semiconductor S2 being helped to simultaneously turn on, resonant cavity input voltage is the half Vin/2 of input voltage.
2. a kind of control method using T-type LLC resonant converter described in claim 1, it is characterised in that include the following steps:
Second metal-oxide-semiconductor Q2 and the second auxiliary MOS transistor S2 is opened and resonance current is negative as original state, and resonant cavity is defeated at this time
Entering voltage is 0, turns off the second metal-oxide-semiconductor Q2, the resonance current change of current to the parasitic diode of the first auxiliary MOS transistor S1 and the second auxiliary
Metal-oxide-semiconductor S2, resonant cavity input voltage are Vin/2, and the first auxiliary MOS transistor S1 no-voltage is open-minded, turn off the second auxiliary MOS transistor S2,
The resonance current change of current to the first metal-oxide-semiconductor Q1 parasitic diode, resonant cavity input voltage is Vin, and the first metal-oxide-semiconductor Q1 no-voltage is opened
Logical, resonance current commutation, resonance current is positive, the first metal-oxide-semiconductor Q1 shutdown, the resonance current change of current to the first auxiliary MOS transistor S1 and
The parasitic diode of second auxiliary MOS transistor S2, resonant cavity input voltage are Vin/2, and the second auxiliary MOS transistor S2 no-voltage is open-minded,
First auxiliary MOS transistor S1 shutdown, the resonance current change of current to the second metal-oxide-semiconductor Q2 parasitic diode, resonant cavity input voltage are 0, the
Two metal-oxide-semiconductor Q2 no-voltages are open-minded, complete a circulation；In the above-mentioned course of work, the first metal-oxide-semiconductor of primary side Q1, the second metal-oxide-semiconductor
Q2, S1, that no-voltage may be implemented in the second auxiliary MOS transistor S2 is open-minded.
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| CN102969898A (en) * | 2012-11-29 | 2013-03-13 | 盐城工学院 | Low-voltage wide-input three-level full-bridge converter and control method thereof |
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