CN110429092A - Imaging sensor and forming method thereof - Google Patents
Imaging sensor and forming method thereof Download PDFInfo
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- CN110429092A CN110429092A CN201910705010.8A CN201910705010A CN110429092A CN 110429092 A CN110429092 A CN 110429092A CN 201910705010 A CN201910705010 A CN 201910705010A CN 110429092 A CN110429092 A CN 110429092A
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- 238000003384 imaging method Methods 0.000 title claims abstract description 56
- 238000000034 method Methods 0.000 title claims abstract description 31
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- 238000009792 diffusion process Methods 0.000 claims abstract description 110
- 238000007667 floating Methods 0.000 claims abstract description 110
- 239000004065 semiconductor Substances 0.000 claims abstract description 102
- 238000002955 isolation Methods 0.000 claims abstract description 75
- 238000010276 construction Methods 0.000 claims abstract description 70
- 230000005540 biological transmission Effects 0.000 claims abstract description 49
- 239000000463 material Substances 0.000 claims description 54
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 5
- 229920005591 polysilicon Polymers 0.000 claims description 5
- 238000011049 filling Methods 0.000 claims description 4
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 4
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 4
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14632—Wafer-level processed structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14687—Wafer level processing
Abstract
The application provides a kind of imaging sensor and forming method thereof, and described image sensor includes: semiconductor substrate, and the photoelectric device of discrete arrangement is formed in the semiconductor substrate；Groove isolation construction is formed in the semiconductor substrate and between the photoelectric device；First floating diffusion region and the second floating diffusion region, are formed in the semiconductor substrate on the photoelectric device Nei and between the groove isolation construction；Grid is transmitted, is formed in the groove isolation construction of the photoelectric device side, the both ends of the transmission grid are close with first floating diffusion region and photoelectric device respectively；Grid is controlled, is formed on the first surface of the semiconductor substrate on the photoelectric device, the both ends of the control grid are close with first floating diffusion region and the second floating diffusion region respectively.The application realizes the high dynamic range and high sensitivity of imaging sensor, improves the performance of imaging sensor.
Description
Technical field
This application involves field of semiconductor manufacture, it particularly relates to a kind of imaging sensor and forming method thereof.
Background technique
Imaging sensor is a kind of device that optical imagery is converted into electric signal.With the hair of computer and communications industry
Exhibition, the demand to high-performance image sensors constantly increase, these high-performance image sensors are widely used in such as Digital photographic
The various necks of machine, camcorders, PCS Personal Communications System (PCS), game machine, security monitoring video camera, medical miniature camera etc
Domain.
Imaging sensor generally includes two types, charge coupling device (CCD) sensor and cmos image sensor
(CMOS Image Sensors, CIS).Compared to ccd image sensor, cmos image sensor has integrated level height, power consumption
The small, advantages such as manufacturing cost is low, thus there is widely application.Compared to the cmos image of the limited low-dynamic range of application
The cmos image sensor of sensor, high dynamic range (high dynamic range) has wider application, especially answers
For fields such as automation control and security systems.
Existing cmos image sensor using more floating diffusion regions (multi floating diffusion) structure come
Dynamic range is improved, however, this structure can reduce the area of photoelectric device such as photodiode, to reduce imaging sensor
Sensitivity.Such as in a kind of existing planar structure, photodiode and floating diffusion region are formed in semiconductor substrate
The same side, when the region of floating diffusion region increases (such as forming more floating diffusion regions), correspondingly, the region of photodiode will
Reduce.
Summary of the invention
Technical scheme technical problems to be solved are to provide a kind of high dynamic range and highly sensitive image passes
Sensor.
In order to solve the above technical problems, on the one hand the application provides a kind of imaging sensor, comprising: semiconductor substrate, institute
State the photoelectric device that discrete arrangement is formed in semiconductor substrate；Groove isolation construction, be formed in the semiconductor substrate and
Between the photoelectric device；First floating diffusion region and the second floating diffusion region, half be formed on the photoelectric device
In conductor substrate and between the groove isolation construction；Transmit grid, be formed in the groove of the photoelectric device side every
From in structure, the both ends of the transmission grid are close with first floating diffusion region and photoelectric device respectively；Control grid, shape
On the first surface of semiconductor substrate on photoelectric device described in Cheng Yu, the both ends of the control grid are floating with described first respectively
It sets diffusion region and the second floating diffusion region is close.
In some embodiments of the present application, the width for being formed with the groove isolation construction of transmission grid, which is greater than, not to be transmitted
The width of the groove isolation construction of grid.
In some embodiments of the present application, the groove isolation construction includes: to be formed in the semiconductor substrate
First groove；Positioned at the first insulating layer of the first groove side wall and bottom；It covers described in first insulating layer and filling
First filled layer of first groove.
In some embodiments of the present application, first insulating layer includes the first oxide layer, high dielectric constant material layer
With the second oxide layer；First filled layer includes silicon oxide layer or first filled layer includes silicon oxide layer and nitridation
Silicon layer.
In some embodiments of the present application, first oxide layer, the second oxide layer material be silica, the height
The material of dielectric constant material layer is aluminium oxide or hafnium oxide.
In some embodiments of the present application, the material of first insulating layer is silicon oxide or silicon nitride, the Gao Jie
The material of dielectric constant material is aluminium oxide.
In some embodiments of the present application, the transmission grid includes: the grid being formed in the groove isolation construction
Pole groove；Positioned at the dielectric layer of the gate trench sidewalls and bottom；It covers the dielectric layer and fills the gate trench
Gate material layers.
In some embodiments of the present application, the material of the dielectric layer is silicon oxide or silicon nitride, the grid material
For polysilicon or metal material.
In some embodiments of the present application, depth of the transmission grid in the groove isolation construction is greater than described
The distance between first floating diffusion region and the photoelectric device.
In some embodiments of the present application, the control grid includes: be sequentially formed at the semiconductor substrate the
Gate oxide and grid layer on one surface.
In some embodiments of the present application, the control grid is greater than described first in the width of the first surface and floats
Set the distance between diffusion region and second floating diffusion region.
In some embodiments of the present application, described image sensor further include: be formed in the of the semiconductor substrate
Colour filter and lenticule on two surfaces, the first surface and second surface are opposite face.
The another aspect of the application provides a kind of forming method of imaging sensor, comprising: semiconductor substrate is provided, it is described
The photoelectric device of discrete arrangement is formed in semiconductor substrate；Groove isolation construction is formed in the semiconductor substrate, it is described
Groove isolation construction is between the photoelectric device；Transmission grid are formed in the groove isolation construction of the photoelectric device side
Pole, one end of the transmission grid and the photoelectric device are close；Is formed in the semiconductor substrate on the photoelectric device
One floating diffusion region and the second floating diffusion region, first floating diffusion region and the second floating diffusion region be located at the groove every
From between structure, the other end and first floating diffusion region of the transmission grid are close；Half on the photoelectric device
On the first surface of conductor substrate formed control grid, it is described control grid both ends respectively with first floating diffusion region and
Second floating diffusion region is close.
In some embodiments of the present application, forming the groove isolation construction includes: the etching semiconductor substrate
First surface forms first groove in the semiconductor substrate；It is formed and covers the first of the first groove side wall and bottom
Insulating layer；The first filled layer for covering first insulating layer is formed in the first groove.
In some embodiments of the present application, forming the transmission grid includes: etching first filled layer, described
Gate trench is formed in groove isolation construction；Form the dielectric layer for covering the gate trench sidewalls and bottom；In the grid
Full grid material is filled in groove, forms the gate material layers for covering the dielectric layer.
In some embodiments of the present application, formed control grid include: the semiconductor substrate first surface according to
Secondary formation gate oxide and grid layer；The gate oxide and grid layer are etched, the control for corresponding to the photoelectric device is formed
Grid.
In some embodiments of the present application, the technique for forming first floating diffusion region and the second floating diffusion region is
Ion implantation technology.
In some embodiments of the present application, the forming method of described image sensor further include: grind the semiconductor
For the second surface of substrate the semiconductor substrate is thinned, the first surface and second surface are opposite face；After being thinned
Colour filter and lenticule are formed on the second surface of semiconductor substrate.
In some embodiments of the present application, the forming method of described image sensor further include: etch the semiconductor
The second surface of substrate forms the second groove for being connected to the groove isolation construction in the semiconductor substrate；Form covering
The second insulating layer of the second groove side wall；The second filling for covering the second insulating layer is formed in the second groove
Layer.
Using image sensor structure described in the embodiment of the present application and forming method thereof, (first is floating for floating diffusion region
Diffusion region and the second floating diffusion region) and photoelectric device be formed in the different depth in semiconductor substrate, i.e., floating diffusion region and
Photoelectric device is not in same plane, it may be said that is the stereoscopic arrangement of upper and lower position, when the area increase of floating diffusion region will not
The area of photoelectric device is influenced, photoelectric device can be sufficiently large, thereby ensures that light inlet, improves photoelectric conversion effect
Rate.Also, transmission grid is formed in groove isolation construction, and is not take up pixel unit area domain, and then will not influence photoelectricity
The area of device.Therefore, in the case where not increasing image area sensor, while high dynamic range and highly sensitive is realized
Degree, and then improve the performance of imaging sensor.
Other feature will be set forth in part in the description in the application.By the elaboration, make the following drawings and
The content of embodiment narration becomes apparent for those of ordinary skills.Inventive point in the application can pass through
Practice is sufficiently illustrated using method described in detailed example discussed below, means and combinations thereof.
Detailed description of the invention
Exemplary embodiment disclosed in this application is described in detail in the following drawings.Wherein identical appended drawing reference is in attached drawing
Several views in indicate similar structure.Those of ordinary skill in the art will be understood that these embodiments be non-limiting,
Exemplary embodiment, the purpose that attached drawing is merely to illustrate and describes, it is no intended to it limits the scope of the present disclosure, other modes
Embodiment may also similarly complete the intention of the invention in the application.It should be appreciated that the drawings are not drawn to scale.Wherein:
Fig. 1 is the cross section structure schematic diagram of the imaging sensor of the embodiment of the present application；
Fig. 2 is a kind of overlooking structure diagram of application example of the imaging sensor of the embodiment of the present application；
Fig. 3 is the structural schematic diagram of the reading circuit of the pixel unit of the imaging sensor of the embodiment of the present application；
The corresponding cross section structure of each step of forming method of Fig. 4 to the imaging sensor that Fig. 9 figure is the embodiment of the present application shows
It is intended to.
Specific embodiment
Following description provides the specific application scene of the application and requirements, it is therefore an objective to those skilled in the art be enable to make
It makes and using the content in the application.To those skilled in the art, to the various partial modifications of the disclosed embodiments
Be it will be apparent that and without departing from the spirit and scope of the disclosure, the General Principle that will can be defined here
Applied to other embodiments and application.Therefore, the embodiment the present disclosure is not limited to shown in, but it is consistent most wide with claim
Range.
In existing image sensor structure, for the transmission grid of photodiode (PD) Yu floating diffusion region (FD) to be connected
Pole (TG) is formed in the surface of semiconductor substrate, therefore photodiode and floating diffusion region are formed in the half of transmission grid two sides
The same side in conductor substrate and positioned at semiconductor substrate surface.However when forming more floating diffusion regions, for being connected two
The control grid (SG) of floating diffusion region is also formed in the surface of semiconductor substrate, and two floating diffusion regions are formed in control grid
The same side in the semiconductor substrate of two sides and positioned at semiconductor substrate surface.The plane of this photoelectric device and floating diffusion region
Layout structure, in the case where pixel unit region is constant, since the region of floating diffusion region increases, correspondingly, photoelectric device
Region area will reduce, to affect light inlet, reduce the sensitivity of imaging sensor.If increasing floating expansion
Area of the region in area without reducing photoelectric device is dissipated, then will increase the area of imaging sensor again.
Defect based on the prior art, technical scheme propose a kind of image sensing with more floating diffusion regions
Device, two floating diffusion regions and photoelectric device are formed in the different depth in semiconductor substrate, and transmission grid is formed in phototube
In the groove isolation construction of part side, in the case where not increasing pixel unit region, so that the region area foot of photoelectric device
It is enough big, it ensure that the absorbing amount of photoelectric device, improve the sensitivity of imaging sensor.
Technical scheme is described in detail below with reference to embodiment and attached drawing.
Referring to FIG. 1, the imaging sensor of the embodiment of the present application includes: semiconductor substrate 10, the semiconductor substrate 10
Inside it is formed with the photoelectric device 11 of discrete arrangement；Groove isolation construction 12 is formed in the semiconductor substrate 10 and is located at institute
It states between photoelectric device 11；First floating diffusion region 131 and the second floating diffusion region 132, are formed on the photoelectric device 11
Semiconductor substrate 10 in and between the groove isolation construction 12；Grid 14 is transmitted, the photoelectric device 11 is formed in
In the groove isolation construction 12 of side, it is described transmission grid 14 both ends respectively with first floating diffusion region 131 and photoelectricity
Device 11 is close；Grid 15 is controlled, is formed on the first surface 101 of the semiconductor substrate 10 on the photoelectric device 11, institute
The both ends for stating control grid 15 are close with first floating diffusion region 131 and the second floating diffusion region 132 respectively.
It can be with it should be noted that semiconductor substrate 10 includes multiple pixel unit regions, in each pixel unit region
At least one photoelectric device 11 is formed, the attached drawing of the embodiment of the present application illustrates only a pixel unit region, with clearly
The structure of each part mentioned above in display pixel cells region.
Semiconductor substrate 10 can be that the material of silicon substrate or semiconductor substrate 10 can also be germanium, SiGe, carbonization
Silicon, GaAs or gallium indium etc. are suitable for the material of imaging sensor, and the semiconductor substrate 10 can also be insulator surface
Silicon substrate or insulator surface germanium substrate, or growth has the substrate of epitaxial layer.Semiconductor substrate 10 has first
Surface 101 and second surface 102, first surface 101 and second surface 102 are opposite face.Photoelectric device 11 can be photoelectricity two
Pole pipe is formed in semiconductor substrate 10, photoelectric device 11 and first surface and carrying out ion implanting in first surface 101
101 distance is greater than photoelectric device 11 at a distance from second surface 102.
In the present embodiment, the groove isolation construction 12 is deep trench isolation structure (DTI), from the of semiconductor substrate 10
One surface 101 extends to second surface 102, and depth is greater than photoelectric device 11 at a distance from first surface 101, trench isolations knot
The bottom of structure 12 is close to second surface 102.In other embodiments, groove isolation construction 12 can also prolong from first surface 101
Second surface 102 is extended to, i.e. perforation first surface 101 and second surface 102.
Groove isolation construction 12 may include: the first groove 121 being formed in the semiconductor substrate 10；Positioned at described
First insulating layer 122 of 121 side wall of first groove and bottom；It covers first insulating layer 122 and fills the first groove
121 the first filled layer 123.Wherein, first insulating layer 122 is usually composite layer, and such as the first insulating layer 122 can be into one
Step includes the first oxide layer for being sequentially formed at 121 side wall of first groove and bottom, high dielectric constant material layer and the second oxidation
Layer (not shown), i.e., the side wall of the described first oxide layer covering first groove 121 and bottom, the high dielectric constant material
Layer covers first oxide layer, and second oxide layer covers the high dielectric constant material layer.First oxide layer,
The material of dioxide layer is silica, and the material of the high dielectric constant material layer is hafnium oxide or aluminium oxide etc..Described first
Filled layer 123 can be single layer such as silicon oxide layer；First filled layer 123 is also possible to composite layer, such as may include oxidation
Silicon layer and silicon nitride layer.
The critical size (width) of groove isolation construction 12 should be as small as possible under the premise of meeting technique and requiring, due to
Transmission grid 14 is formed in the groove isolation construction 12 of 11 side of photoelectric device, is formed with the trench isolations knot of transmission grid 14
The width of structure 12 can be greater than the width that the groove isolation construction 12 of grid is not transmitted in the other side, to guarantee transmission grid 14
Critical size meets technique requirement.
In other embodiments, the groove isolation construction of the two sides of photoelectric device also can have identical width, wherein
It is each formed with transmission grid structure, in practical application, applying as needed to the transmission grid in wherein side groove isolation construction
Making alive.
In the present embodiment, the transmission grid 14 includes: the gate trench being formed in the groove isolation construction 12
141；Positioned at the dielectric layer 142 of 141 side wall of gate trench and bottom；It covers the dielectric layer 142 and fills the grid
The gate material layers 143 of groove 141.Wherein, the material of the dielectric layer 142 can be silicon oxide or silicon nitride, the grid
The material of material layer 143 can be polysilicon or metal material, and the metal material can be, for example, aluminium or tungsten etc..
Transmission grid 14 extends from the surface of groove isolation construction 12 to the bottom of groove isolation construction 12, and one end is close
First floating diffusion region 131, the other end is close to photoelectric device 11.It transmits grid 14 to be used for when powering on, makes the first floating diffusion
Channel (Channel) between area 131 and photoelectric device 11 is opened, so that the photo-generated carrier that photoelectric device 11 is formed can
It is stored with being moved to the first floating diffusion region 131.Transmission grid 14 needs to cover the first floating diffusion region 131 and phototube
Channel region between part 11, therefore, depth of the transmission grid 14 in the groove isolation construction 12 can be greater than institute
State the distance between the first floating diffusion region 131 and described photoelectric device 11.In a specific example, the width of grid 14 is transmitted
It can be 50nm~1000nm, depth can be 80nm~400nm.
In the present embodiment, the control grid 15 includes: the first surface 101 for being sequentially formed at the semiconductor substrate 10
On gate oxide 151 and grid layer 152.Wherein, the material of gate oxide 151 can be silica etc., the material of grid layer 152
Material can be polysilicon or metal material etc..It controls grid 15 to be used for when powering on, keeps the first floating diffusion region 131 and second floating
The channel set between diffusion region 132 is opened.One end of grid 15 is controlled close to the first floating diffusion 131, the other end is close to second
Floating diffusion region 132, control grid 15 need to cover the ditch between the first floating diffusion region 131 and the second floating diffusion region 132
Road region, therefore, the control grid 15 can be greater than first floating diffusion region in the width of the first surface 101
The distance between 131 and second floating diffusion region 132.
Please refer to a kind of plan structure signal of application example of the imaging sensor of the embodiment of the present application shown in Fig. 2
Figure, Fig. 1 are the cross section structure schematic diagram in Fig. 2 along A-A.Four pixel unit regions, adjacent pixel unit area are shown in Fig. 2
Domain can share the transmission grid 14 in the groove isolation construction 12 between them, that is, control phase by a transmission grid 14
Channel between adjacent two the first floating diffusion regions 131 and photoelectric device 11 opens or closes.In other embodiments, may be used
Be the channel transmitted around the control of grid 14 between four the first floating diffusion regions 131 and photoelectric device 11 by one open or
Close etc..
The structural schematic diagram of the reading circuit of the pixel unit of the imaging sensor of the present embodiment shown in Fig. 3 is please referred to,
The reading circuit of diagram includes that transmission transistor T1, switching transistor T2, reset transistor T3, amplifying transistor T4 and selection are brilliant
Body pipe T5.In dim light, the logic circuit control transmission grid TG of imaging sensor opens transmission transistor T1, and control gate SG is closed
The total capacitance of switching transistor T2, floating diffusion region are small, can detecte dim light；In strong light, logic circuit control transmission grid TG
Opening transmission transistor T1, control gate SG turn on the switch transistor T2, and the total capacitance of floating diffusion region increases, can detecte stronger
Light.Therefore, higher responding range is realized by the capacitance variations that logic circuit controls floating diffusion region.Work as logic
Circuit control selection grid SEL opens selection transistor T5, and the photogenerated charge of floating diffusion region storage is carried out through amplifying transistor T4
Signal amplifies and is read out on bus COLBUS.
It is described in detail below in conjunction with forming method of the attached drawing to the imaging sensor of the embodiment of the present application.
Referring to FIG. 4, providing semiconductor substrate 10, the photoelectric device of discrete arrangement is formed in the semiconductor substrate 10
11.A pixel unit region is shown in figure, is formed with a photoelectric device 11, and photoelectric device 11 can be photoelectricity two
Pole pipe or phototriode etc..
Referring to FIG. 5, forming groove isolation construction 12, the groove isolation construction 12 in the semiconductor substrate 10
Between the photoelectric device 11.Due to illustrating only a pixel unit region in figure, groove isolation construction 12 is located at
The two sides of photoelectric device 11, wherein the width of the groove isolation construction 12 of side is greater than the groove isolation construction of the other side.
In the present embodiment, forming the groove isolation construction 12 includes: the first surface for etching the semiconductor substrate 10
101, first groove 121 is formed in the semiconductor substrate 10；It is formed and covers the of 121 side wall of first groove and bottom
One insulating layer 122；Full insulating materials is filled in the first groove 121, is formed and is covered the first of first insulating layer 122
Filled layer 123.Wherein, etch semiconductor substrates 10 can use photoetching process, and forming the first insulating layer 122 can further wrap
It includes: sequentially forming the first oxide layer, high dielectric constant material (High K) layer and in 121 side wall of first groove and bottom
Dioxide layer.The high dielectric constant material can be formed using oxidation technology or depositing operation by forming first oxide layer
Layer, the second oxide layer and the first filled layer 123 can use depositing operation, wherein second oxide layer and the first filled layer
It is to separate growth.
Referring to FIG. 6, forming transmission grid 14, the biography in the groove isolation construction 12 of 11 side of photoelectric device
One end of defeated grid 14 and the photoelectric device 11 are close.
In the present embodiment, forming the transmission grid 14 includes: to etch first filled layer 123, the groove every
From formation gate trench 141 in structure 12；Form the dielectric layer 142 for covering 141 side wall of gate trench and bottom；Described
Full grid material is filled in gate trench 141, forms the gate material layers 143 for covering the dielectric layer 142.Wherein, etching is high
Dielectric constant material layer 123 can use photoetching process, form dielectric layer 142 and gate material layers 143 can be using deposition work
Skill.
Referring to FIG. 7, forming the first floating diffusion region 131 and in the semiconductor substrate 10 on the photoelectric device 11
Two floating diffusion regions 132, first floating diffusion region 131 and the second floating diffusion region 132 are located at the groove isolation construction
Between 12, the other end and first floating diffusion region 131 of the transmission grid 14 are close.Wherein, it is floating to form described first
The technique for setting diffusion region 131 and the second floating diffusion region 132 can be ion implantation technology, pass through the to semiconductor substrate 10
One surface 101 carries out ion implanting and forms floating diffusion region 131 and 132.
Referring to FIG. 8, forming control grid on the first surface 101 of the semiconductor substrate 10 on the photoelectric device 11
15, the both ends of the control grid 15 are close with first floating diffusion region 131 and the second floating diffusion region 131 respectively.
In the present embodiment, forming control grid 15 includes: to sequentially form in the first surface 101 of the semiconductor substrate 10
Gate oxide 151 and grid layer 152；The gate oxide 151 and grid layer 152 are etched, is formed and corresponds to the photoelectric device
11 control grid 15.Wherein, depositing operation can be used by forming gate oxide 151 and grid layer 152, etch gate oxide
151 and grid layer 152 can use photoetching process." correspondence " described here is specially the correspondence of position.
Further, referring to FIG. 9, the forming method of the imaging sensor of the present embodiment further include: grind the semiconductor
For the second surface 102 of substrate 10 the semiconductor substrate 10 is thinned, the first surface 101 and second surface 102 are opposite
Face；The colour filter 16 and lenticule of corresponding photoelectric device 11 are formed on the second surface 102 of the semiconductor substrate 10 after being thinned
17.Wherein, semiconductor substrate 10, which is thinned, can use chemical mechanical grinding, form colour filter 16 and lenticule 17 using conventional work
Skill, herein not reinflated explanation.
Referring still to Fig. 9, the second surface 102 of the semiconductor substrate 10 after etching is thinned, in the semiconductor substrate 10
Middle to form the second groove for being connected to the groove isolation construction 12, second groove is connected to first groove 121；It is formed described in covering
The second insulating layer of second groove side wall, the second insulating layer are connected to the first insulating layer 122, the knot of the second insulating layer
Structure and material can be identical as the structure and material of the first insulating layer 122；Covering described second is formed in the second groove
Second filled layer of insulating layer, second filled layer are connected to the first filled layer 123, the structure and material of second filled layer
Material can be identical as the structure and material of the first filled layer 123.In other embodiments, groove isolation construction can also formed
The groove isolation construction of perforation first surface 101 and second surface 102 is directly formed when 12.
It should be noted that before thinned semiconductor substrate 10, further includes: form other devices over the semiconductor substrate 10
With metal connecting line；Then, the semiconductor substrate 10 upward of second surface 102 is formed with logical device and patrolled with another
It collects the semiconductor substrate bonding (bonding) of circuit and interconnects, these are common process, herein not reinflated explanation.Subtracting
When the thin semiconductor substrate 10, the semiconductor substrate for being formed with logical device and logic circuit can play semiconductor substrate 10
To supporting role.
Using image sensor structure described in the embodiment of the present application and forming method thereof, (first is floating for floating diffusion region
Diffusion region and the second floating diffusion region) and photoelectric device be formed in the different depth in semiconductor substrate, i.e., floating diffusion region and
Photoelectric device is not in same plane, but the stereoscopic arrangement of upper and lower position, when the area increase of floating diffusion region will not influence
The area of photoelectric device, photoelectric device can be sufficiently large, thereby ensure that light inlet, improve photoelectric conversion efficiency.
Also, transmission grid is formed in groove isolation construction, and is not take up pixel unit area domain, and then will not influence photoelectric device
Area.Therefore the area that the application does not increase imaging sensor can improve image biography while realizing high dynamic range
The sensitivity of sensor improves the performance of imaging sensor.
In conclusion after reading this detailed disclosures, it will be understood by those skilled in the art that aforementioned detailed disclosure
Content can be only presented in an illustrative manner, and can not be restrictive.Although not explicitly described or shown herein, this field skill
Art personnel are understood that improve and modify it is intended to include the various reasonable changes to embodiment.These change, improve and
It modifies and is intended to be proposed by the disclosure, and in the spirit and scope of the exemplary embodiment of the disclosure.
It should be appreciated that the term "and/or" that the present embodiment uses includes associated listing one or more of project
It is any or all combination.It should be appreciated that when an element is referred to as being "connected" or "coupled" to another element, it can be with
It is directly connected or is coupled to another element, or there may also be intermediary elements.
Similarly, it should be understood that when the element of such as layer, region or substrate etc is referred to as in another element "upper"
When, it can directly on the other element, or there may also be intermediary elements.In contrast, term " directly " indicates
There is no intermediary element.It is also understood that term "comprising", " including ", " comprising " and/or " including ", herein in use, referring to
Bright there are documented feature, entirety, step, operation, element and/or component, but presence or one or more additional is not precluded
Other a features, entirety, step, operation, element, component and/or their group.
It is also understood that although term first, second, third, etc. can be used herein to describe various elements, these
Element should not be limited by these terms.These terms are only used to distinguish an element with another element.Therefore, In
In the case where not being detached from teachings of the present application, first element in some embodiments can be referred to as in other embodiments
Second element.Identical reference label or identical reference designator indicate identical element throughout the specification.
In addition, by reference to as Utopian graphical representation of exemplary cross sectional view and/or plane diagram example is described
Property embodiment.Therefore, because with the shape illustrated not being both foreseeable caused by such as manufacturing technology and/or tolerance.Cause
Exemplary embodiment, should not be interpreted as being limited to the shape in region out shown here, but should include by for example making by this
The deviation in shape caused by making.For example, the etching area for being shown as rectangle would generally have circular or curved spy
Sign.Therefore, region shown in figure is substantially schematical, and shape is not configured to show the practical shape in the region of device
Shape is also not to limit the range of exemplary embodiment.
In addition, embodiment of the present disclosure can also include following exemplary example (EE).
A kind of imaging sensor characterized by comprising
Semiconductor substrate is formed with the photoelectric device of discrete arrangement in the semiconductor substrate；
Groove isolation construction is formed in the semiconductor substrate and between the photoelectric device；
First EE1 floating diffusion region and the second floating diffusion region are formed in the semiconductor substrate on the photoelectric device
And between the groove isolation construction；
Grid is transmitted, is formed in the groove isolation construction of the photoelectric device side, the both ends point of the transmission grid
It is not close with first floating diffusion region and photoelectric device；
Grid is controlled, is formed on the first surface of the semiconductor substrate on the photoelectric device, the control grid
Both ends are close with first floating diffusion region and the second floating diffusion region respectively.
Imaging sensor of the EE2 as described in EE1, which is characterized in that be formed with the width of the groove isolation construction of transmission grid
Degree is greater than the width of the groove isolation construction without transmitting grid.
Imaging sensor of the EE3 as described in EE1, which is characterized in that the groove isolation construction includes: to be formed in described half
First groove in conductor substrate；Positioned at the first insulating layer of the first groove side wall and bottom；Cover first insulation
Layer and the first filled layer for filling the first groove.
Imaging sensor of the EE4 as described in EE1, which is characterized in that first insulating layer includes the first oxide layer, Gao Jie
Dielectric constant material and the second oxide layer；First filled layer includes silicon oxide layer or first filled layer includes oxygen
SiClx layer and silicon nitride layer.
Imaging sensor of the EE5 as described in EE4, which is characterized in that first oxide layer, the second oxide layer material be
Silica, the material of the high dielectric constant material layer are aluminium oxide or hafnium oxide.
Imaging sensor of the EE6 as described in EE1, which is characterized in that the transmission grid include: be formed in the groove every
From the gate trench in structure；Positioned at the dielectric layer of the gate trench sidewalls and bottom；It covers the dielectric layer and fills institute
State the gate material layers of gate trench.
Imaging sensor of the EE7 as described in EE6, which is characterized in that the material of the dielectric layer is silicon oxide or silicon nitride,
The grid material is polysilicon or metal material.
Imaging sensor of the EE8 as described in EE1, which is characterized in that the transmission grid is in the groove isolation construction
Depth be greater than the distance between first floating diffusion region and the photoelectric device.
Imaging sensor of the EE9 as described in EE1, which is characterized in that the control grid includes: to be sequentially formed at described half
Gate oxide and grid layer on the first surface of conductor substrate.
Imaging sensor of the EE10 as described in EE1, which is characterized in that width of the control grid in the first surface
Greater than the distance between first floating diffusion region and second floating diffusion region.
Imaging sensor of the EE11 as described in EE1, which is characterized in that further include: it is formed in the of the semiconductor substrate
Colour filter and lenticule on two surfaces, the first surface and second surface are opposite face.
A kind of forming method of imaging sensor of EE12 characterized by comprising
Semiconductor substrate is provided, the photoelectric device of discrete arrangement is formed in the semiconductor substrate；In the semiconductor
Groove isolation construction is formed in substrate, the groove isolation construction is between the photoelectric device；
Transmission grid, one end of the transmission grid and institute are formed in the groove isolation construction of the photoelectric device side
It is close to state photoelectric device；
The first floating diffusion region and the second floating diffusion region are formed in the semiconductor substrate on the photoelectric device, it is described
First floating diffusion region and the second floating diffusion region between the groove isolation construction, it is described transmission grid the other end with
First floating diffusion region is close；Control grid is formed on the first surface of the semiconductor substrate on the photoelectric device,
The both ends of the control grid are close with first floating diffusion region and the second floating diffusion region respectively.
The forming method of imaging sensor of the EE13 as described in EE12, which is characterized in that form the groove isolation construction
Include:
The first surface for etching the semiconductor substrate, forms first groove in the semiconductor substrate；
Form the first insulating layer for covering the first groove side wall and bottom；
The first filled layer for covering first insulating layer is formed in the first groove.
The forming method of imaging sensor of the EE14 as described in EE13, which is characterized in that forming the transmission grid includes:
First filled layer is etched, forms gate trench in the groove isolation construction；
Form the dielectric layer for covering the gate trench sidewalls and bottom；
Full grid material is filled in the gate trench, forms the gate material layers for covering the dielectric layer.
The forming method of imaging sensor of the EE15 as described in EE12, which is characterized in that forming control grid includes:
Gate oxide and grid layer are sequentially formed in the first surface of the semiconductor substrate；
The gate oxide and grid layer are etched, the control grid for corresponding to the photoelectric device is formed.
The forming method of imaging sensor of the EE16 as described in EE12, which is characterized in that form the first floating diffusion
The technique of area and the second floating diffusion region is ion implantation technology.
The forming method of imaging sensor of the EE17 as described in EE12, which is characterized in that further include:
The second surface of the semiconductor substrate is ground so that the semiconductor substrate, the first surface and the second table is thinned
Face is opposite face；
Colour filter and lenticule are formed on the second surface of the semiconductor substrate after being thinned.
The forming method of imaging sensor of the EE18 as described in EE17, which is characterized in that further include:
The second surface of the semiconductor substrate is etched, is formed be connected to the trench isolations knot in the semiconductor substrate
The second groove of structure；
Form the second insulating layer for covering the second groove side wall；
The second filled layer for covering the second insulating layer is formed in the second groove.
Claims (10)
1. a kind of imaging sensor characterized by comprising
Semiconductor substrate is formed with the photoelectric device of discrete arrangement in the semiconductor substrate；
Groove isolation construction is formed in the semiconductor substrate and between the photoelectric device；
First floating diffusion region and the second floating diffusion region are formed in the semiconductor substrate on the photoelectric device Nei and are located at institute
It states between groove isolation construction；
Transmit grid, be formed in the groove isolation construction of the photoelectric device side, it is described transmission grid both ends respectively with
First floating diffusion region and photoelectric device are close；
Grid is controlled, is formed on the first surface of the semiconductor substrate on the photoelectric device, the both ends of the control grid
It is close with first floating diffusion region and the second floating diffusion region respectively.
2. imaging sensor as described in claim 1, which is characterized in that be formed with the width of the groove isolation construction of transmission grid
Degree is greater than the width of the groove isolation construction without transmitting grid.
3. imaging sensor as described in claim 1, which is characterized in that the groove isolation construction include: be formed in it is described
First groove in semiconductor substrate；Positioned at the first insulating layer of the first groove side wall and bottom；Cover described first absolutely
Edge layer and the first filled layer for filling the first groove.
4. imaging sensor as described in claim 1, which is characterized in that first insulating layer includes the first oxide layer, height
Dielectric constant material layer and the second oxide layer；First filled layer includes silicon oxide layer or first filled layer includes
Silicon oxide layer and silicon nitride layer.
5. imaging sensor as claimed in claim 4, which is characterized in that the material of first oxide layer, the second oxide layer
For silica, the material of the high dielectric constant material layer is aluminium oxide or hafnium oxide.
6. imaging sensor as described in claim 1, which is characterized in that the transmission grid includes: to be formed in the groove
Gate trench in isolation structure；Positioned at the dielectric layer of the gate trench sidewalls and bottom；It covers the dielectric layer and fills
The gate material layers of the gate trench.
7. imaging sensor as claimed in claim 6, which is characterized in that the material of the dielectric layer is silica or nitridation
Silicon, the grid material are polysilicon or metal material.
8. imaging sensor as described in claim 1, which is characterized in that the transmission grid is in the groove isolation construction
Depth be greater than the distance between first floating diffusion region and the photoelectric device.
9. imaging sensor as described in claim 1, which is characterized in that the control grid include: be sequentially formed at it is described
Gate oxide and grid layer on the first surface of semiconductor substrate.
10. a kind of forming method of imaging sensor characterized by comprising
Semiconductor substrate is provided, the photoelectric device of discrete arrangement is formed in the semiconductor substrate；
Groove isolation construction is formed in the semiconductor substrate, and the groove isolation construction is between the photoelectric device；
Transmission grid, one end of the transmission grid and the light are formed in the groove isolation construction of the photoelectric device side
Electrical part is close；
Form the first floating diffusion region and the second floating diffusion region in the semiconductor substrate on the photoelectric device, described first
Floating diffusion region and the second floating diffusion region between the groove isolation construction, it is described transmission grid the other end with it is described
First floating diffusion region is close；
Control grid, the both ends point of the control grid are formed on the first surface of the semiconductor substrate on the photoelectric device
It is not close with first floating diffusion region and the second floating diffusion region.
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