CN110429029B - Photoresist pattern preparation method and array substrate preparation method - Google Patents
Photoresist pattern preparation method and array substrate preparation method Download PDFInfo
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- CN110429029B CN110429029B CN201910786427.1A CN201910786427A CN110429029B CN 110429029 B CN110429029 B CN 110429029B CN 201910786427 A CN201910786427 A CN 201910786427A CN 110429029 B CN110429029 B CN 110429029B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
Abstract
The embodiment of the invention discloses a preparation method of a photoresist pattern and a preparation method of an array substrate. The preparation method of the photoresist pattern comprises the following steps: providing a substrate, wherein the substrate comprises an exposed area and a non-exposed area; setting a reflecting structure in an exposure area of the substrate, wherein the reflecting structure comprises a reflecting surface, and the reflecting surface is positioned on the side wall of the reflecting structure; forming a photoresist layer on the substrate, wherein the photoresist layer covers the exposure area and the non-exposure area; exposing the photoresist layer in the exposure area to modify the exposed photoresist, wherein the reflecting surface of the reflecting structure reflects light rays incident thereon to increase the volume of the modified photoresist close to the substrate; and developing the photoresist layer to form a photoresist pattern. The embodiment of the invention can improve the light sensitivity of the bottom layer photoresist, solve the problem that the photoresist pattern has errors due to weaker light sensitivity of the bottom layer of the photoresist in the existing exposure process, ensure the accuracy of the photoresist pattern and contribute to improving the photoetching quality.
Description
Technical Field
The embodiment of the invention relates to the technical field of display, in particular to a preparation method of a photoresist pattern and a preparation method of an array substrate.
Background
The current display panel adopts an array substrate for display driving, and the array substrate is provided with a pixel driving circuit, a data line and a scanning line for transmitting signals, and the like, so as to drive a pixel unit to emit light for display. The existing signal wiring such as data lines, scanning lines and the like is generally prepared by adopting a photoetching process. Specifically, the photolithography process includes exposing and developing photoresist to form a photoresist pattern, etching to form signal traces by using the photoresist pattern as a mask, and finally removing the photoresist pattern.
When the existing photoetching process is used for exposure and development, an exposure light source of equipment is vertical incident exposure light from top to bottom, the surface of the photoresist is strong in light sensitivity, and the bottom layer of the photoresist is weak in light sensitivity. Therefore, the slope angle of the actually obtained modified photoresist pattern is not 90 degrees relative to the photoresist pattern with the required slope angle of 90 degrees, so that an exposure error exists between the actually obtained modified photoresist pattern and the photoresist which needs to be modified in an exposure area. After the development is completed, the remained photoresist pattern has an error with the target photoresist pattern, which affects the accuracy of the lithography. Taking a positive photoresist as an example, the photoresist which is exposed to light and is strongly sensitive to light and modified is preferentially washed away, and the photoresist which is weakly sensitive and is not modified is retained, so that the formed photoresist pattern is narrow at the top and wide at the bottom and is in a regular trapezoid shape. The line width in the photoetching graph is widened due to the regular trapezoid photoresist pattern, and the performance of the conducting line of the signal line prepared by the photoetching method has errors.
Disclosure of Invention
The invention provides a preparation method of a photoresist pattern and a preparation method of an array substrate, which are used for improving the light sensitivity of a bottom photoresist and ensuring the accuracy of the photoresist pattern.
In a first aspect, an embodiment of the present invention provides a method for preparing a photoresist pattern, including:
providing a substrate comprising an exposed region and a non-exposed region;
providing a reflective structure within the exposure area of the substrate, the reflective structure comprising a reflective surface, the reflective surface being located on a sidewall of the reflective structure;
forming a photoresist layer on the substrate, the photoresist layer covering the exposed region and the non-exposed region;
exposing the photoresist layer in the exposure area to modify the exposed photoresist, the reflective surface of the reflective structure reflecting light incident thereon to increase the volume of the modified photoresist near the substrate;
and developing the photoresist layer to form a photoresist pattern.
In the method for preparing a photoresist pattern, the thickness of the photoresist layer is optionally greater than the height of the reflective structure.
In the method for preparing a photoresist pattern, the reflective surface may cover the entire sidewall of the reflective structure.
The method for preparing a photoresist pattern as described above, optionally, disposing a reflective structure in an exposure region of the substrate, comprising:
forming a reflective layer on the substrate;
and patterning the reflecting layer by adopting a dry etching process or a wet etching process to form the reflecting structure.
The photoresist pattern preparation method as described above, optionally, the photoresist layer is a positive photoresist layer;
after the photoresist layer in the exposure area is exposed; in the same exposure area, the sum of the modified photoresist area of the photoresist layer close to the substrate and the contact area of the reflecting structure and the substrate is larger than the modified photoresist area far away from the substrate.
In the method for preparing a photoresist pattern, optionally, the cross section of the reflective structure gradually increases along a direction perpendicular to the substrate and from the photoresist layer to the substrate.
In the method for preparing a photoresist pattern, optionally, a plane perpendicular to the substrate is a first plane;
a line obtained by cutting the reflecting surface by the first plane is a straight line;
the included angle between the straight line and the plane of the substrate is 30-80 degrees.
In the method for preparing a photoresist pattern, optionally, a plane perpendicular to the substrate is a first plane;
the line obtained after the reflecting surface is cut by the first plane is a curve.
In the method for preparing a photoresist pattern as described above, optionally, the material of the reflective structure includes at least one of silver, aluminum, molybdenum, and copper.
The embodiment of the invention also provides a preparation method of the array substrate, which adopts the preparation method of the photoresist pattern.
According to the photoresist pattern preparation method and the array substrate preparation method provided by the embodiment of the invention, the substrate is provided, and the reflecting structure is arranged in the exposure area of the substrate, wherein the reflecting structure comprises a reflecting surface, and the reflecting surface is positioned on the side wall of the reflecting structure; and then forming a photoresist layer on the substrate, exposing the photoresist layer in the exposure area to modify the exposed photoresist, reflecting the light incident on the reflecting surface of the reflecting structure in the exposure process to increase the volume of the modified photoresist reflected close to the substrate, and finally developing the photoresist layer to finally form a photoresist pattern. The embodiment of the invention can enable exposure light to be incident to the bottom layer of the photoresist layer of the exposure area, thereby improving the light sensitivity of the photoresist at the bottom layer, solving the problem that the photoresist pattern has errors due to the weak light sensitivity of the photoresist bottom layer in the existing exposure process, ensuring the accuracy of the photoresist pattern and being beneficial to improving the photoetching quality.
Drawings
FIG. 1 is a flow chart of a method for preparing a photoresist pattern provided by an embodiment of the present invention;
FIG. 2 is a flow chart of a structure of a method of fabricating a photoresist pattern shown in FIG. 1;
FIG. 3 is a schematic cross-sectional view of a reflective structure and a photoresist layer structure provided by an embodiment of the present invention;
FIG. 4 is a schematic top view of a reflective structure and a photoresist layer structure according to an embodiment of the present invention;
FIG. 5 is a flow chart of another method for preparing a photoresist pattern provided by an embodiment of the present invention;
FIG. 6 is a flow chart of a structure of a method of fabricating a photoresist pattern shown in FIG. 5;
FIG. 7 is a schematic illustration of the reflection of light in a photoresist layer by the reflective structure of FIG. 6 (b);
FIG. 8 is a schematic diagram of light reflection in a photoresist layer by another reflective structure provided by an embodiment of the present invention.
Description of reference numerals: 10-substrate, 110-exposed region, 120-unexposed region, 20-reflective structure, 21-reflective surface, 22-sidewall, 30-photoresist layer, 31-photoresist pattern, 221-line.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting of the invention. It should be further noted that, for the convenience of description, only some of the structures related to the present invention are shown in the drawings, not all of the structures.
Fig. 1 is a flowchart of a method for preparing a photoresist pattern according to an embodiment of the present invention, and fig. 2 is a flowchart of a structure of the method for preparing a photoresist pattern shown in fig. 1, and referring to fig. 1 and 2, the method for preparing a photoresist pattern includes:
s110, providing a substrate 10, wherein the substrate 10 comprises an exposure area 110 and a non-exposure area 120;
corresponding to step a) in fig. 2, the base 10 is not a pure substrate, and includes a substrate and a film layer on the substrate to be patterned by photolithography. Taking a positive photoresist as an example in photolithography, the exposed region 110 and the non-exposed region 120 of the substrate 10 correspond to a region to be etched and a remaining region in a film layer to be patterned, respectively. For a negative photoresist, the exposed regions 110 and the non-exposed regions 120 of the substrate 10 correspond to the regions to be preserved and etched in the film, respectively.
S120, arranging a reflection structure 20 in the exposure area 110 of the substrate 10, wherein the reflection structure 20 comprises a reflection surface 21, and the reflection surface 21 is positioned on the side wall 22 of the reflection structure 20;
corresponding to step b) of fig. 2, the reflective structure has a reflective surface 21, so that the exposure light in the exposure area can be reflected. The reflective surface 21 is disposed on the sidewall of the reflective structure 20, and for the exposure light propagating perpendicular to the substrate 10, the reflective surface 21 changes the propagation direction of the exposure light so that the exposure light propagates to the area around the reflective structure 20. It is noted that in the cross-sectional view shown in step b) of fig. 2, the reflecting surface 21 and the side wall 22 of the reflecting structure 20 overlap. Whereas on the sidewalls of the other reflective structures 20, there may be no reflective surface 21.
S130, forming a photoresist layer 30 on the substrate 10, wherein the photoresist layer 30 covers the exposure region 110 and the non-exposure region 120;
corresponding to step c) of fig. 2, a positive photoresist or a negative photoresist may be used in the photoresist layer 30. When the photoresist is coated on the substrate 10, it will surround or even cover the reflective structure 20, and the transmission of the exposure light in the photoresist can be changed by the reflective structure 20.
S140, exposing the photoresist layer 30 in the exposure area 110 to modify the exposed photoresist, wherein the reflecting surface 21 of the reflecting structure 20 reflects the light incident thereon to increase the volume of the modified photoresist close to the substrate 10;
corresponding to step d) of fig. 2, the photoresist is modified after being irradiated by the exposure light. For positive photoresist, the exposed photoresist generates acidic substances, and the exposed modified photoresist can be washed away by a developing solution; for negative photoresist, the photosensitizer can generate nitrogen after exposure, and the generated free radicals can form cross-linking among rubber molecules, so that the exposed and modified photoresist cannot be washed away by a developing solution, and the unmodified photoresist is washed away. Since the exposure region is provided with the reflective structure 20, the reflective surface 21 thereon reflects the exposure light to transmit the light to the photoresist around the reflective structure 20. Moreover, because the propagation direction of the reflected light is related to the slope of the reflecting surface, the light can be adjusted to propagate to the photoresist layer 30 near the substrate 10 by reasonably setting the reflecting surface, and at this time, the photoresist at the bottom of the photoresist layer 30 around the reflecting structure 20 is modified by the illumination, so that the volume of the modified photoresist near the substrate 10 is increased. The attenuation of the exposure light at the bottom layer of the photoresist can be compensated to some extent by the reflection of the reflective structure 20, thereby improving the slope angle of the photoresist pattern.
S150, developing the photoresist layer to form a photoresist pattern 31.
Corresponding to step c) of fig. 2, the developing process is essentially a step of dissolving a portion of the photoresist using a developing solution. For positive tone photoresists, the developer is typically an aqueous alkaline solution, typically tetramethylammonium hydroxide. Acid substances such as carboxylic acid and the like can be generated in the positive photoresist during exposure, and the alkali in the tetramethylammonium hydroxide developing solution is neutralized with the acid, so that the exposure modified photoresist is dissolved and is not influenced.
According to the photoresist pattern preparation method provided by the embodiment of the invention, a substrate is provided, and a reflection structure is arranged in an exposure area of the substrate, wherein the reflection structure comprises a reflection surface, and the reflection surface is positioned on the side wall of the reflection structure; and then forming a photoresist layer on the substrate, exposing the photoresist layer in the exposure area to modify the exposed photoresist, reflecting the light incident on the reflecting surface of the reflecting structure in the exposure process to increase the volume of the modified photoresist reflected close to the substrate, and finally developing the photoresist layer to finally form a photoresist pattern. The embodiment of the invention can enable exposure light to be incident to the bottom layer of the photoresist layer of the exposure area, thereby improving the light sensitivity of the photoresist at the bottom layer, solving the problem that the photoresist pattern has errors due to the weak light sensitivity of the photoresist bottom layer in the existing exposure process, ensuring the accuracy of the photoresist pattern and being beneficial to improving the photoetching quality.
It should be noted that the method for preparing a photoresist pattern provided by the embodiment of the present invention is a step of exposing and developing a photoresist in a photolithography process, and a film layer to be patterned may be masked by using a formed photoresist pattern, and then an area not covered by the photoresist pattern in the film layer is etched to form a film layer pattern consistent with the photoresist pattern.
In the above embodiment, the specific method for disposing the reflective structure in the exposure region of the substrate in step S120 includes:
s121, forming a reflecting layer on the substrate;
the reflective layer is made of a material having light reflectivity, and may be a metal material such as silver, aluminum, molybdenum, or copper. Moreover, when the reflective layer is prepared, the reflective layer can be deposited by adopting a thermal evaporation process, a magnetron sputtering process and other processes.
And S122, patterning the reflecting layer by adopting a dry etching process or a wet etching process to form a reflecting structure.
The dry etching and the wet etching are common processes for patterning the film layer, and here, not only the reflective layer needs to be patterned, but also a reflective structure having a sidewall is formed in the patterning process. When etching is performed, the etching conditions can be adjusted to obtain a reflective structure having a sidewall reflective surface. Taking dry etching as an example, etching parameters such as etching time, etching gas ratio, electrode loading voltage and the like can be adjusted, so that the side wall of the reflecting structure is adjusted. When the reflective layer is etched, the actual reflection effect of the sidewall shape of the reflective structure on the exposure light needs to be considered, so the etching condition needs to be adjusted according to the photoresist pattern, thereby obtaining an error-free photoresist pattern, which is not limited herein.
In addition, in addition to the above-mentioned method of forming the reflective structure by etching the reflective layer, a non-reflective structure having a sidewall shape may be formed first, and then the reflective layer is deposited on the surface of the non-reflective structure, so as to form the reflective structure.
In the above embodiment, for the shape of the reflective structure, not only the reflective effect of the shape of the reflective surface on the sidewall on the exposure light needs to be set, but also the utilization rate of the reflective structure on the exposure light and the position of the photoresist pattern where the slope angle needs to be adjusted need to be considered. In view of the above, fig. 3 is a schematic cross-sectional view of a reflective structure and a photoresist layer structure according to an embodiment of the present invention, comparing fig. 2(b) and fig. 3, in the above method for preparing a photoresist pattern, the thickness of the photoresist layer 30 may be set to be greater than the height of the reflective structure 20, at this time, the reflective structure 20 and the sidewall thereof are both located in the photoresist layer 30, that is, the reflective surface 21 in the reflective structure 20, which plays a role in reflection, is also located in the photoresist layer 30, so that a problem that the reflective surface 21 is exposed outside the photoresist layer 30 and the reflected light cannot be incident on the bottom layer of the photoresist is avoided, and the reflective surface 21 located in the photoresist layer 30 can effectively reflect the exposure light incident thereon, so that the exposure light is transmitted to the bottom layer of the photoresist, and the utilization rate of the exposure light is improved.
Fig. 4 is a schematic top view of a reflective structure and a photoresist layer structure according to an embodiment of the present invention, and referring to fig. 4, a reflective surface 21 may be further disposed to cover the entire sidewall 22 of the reflective structure 20. At this time, the side wall of the reflection structure 20 can totally reflect the exposure light, that is, the slope angle of the photoresist pattern in the region corresponding to the reflection structure 20 can be adjusted, so as to ensure the accuracy of the slope angle of all the photoresist patterns. Of course, in consideration of the difficulty in disposing the reflective structure 20, a person skilled in the art may dispose the reflective structure 20 and the reflective surface 21 thereon at the slope angle of the key position in the photoresist pattern, so as to adjust the slope angle of the key position in a targeted manner, which is not limited in the embodiment of the invention.
It can be understood that, in the existing photolithography process, due to the limitation of the preparation process of the exposure mask and the problem of exposure light diffraction, the line width of the existing mask is wide, and therefore the line width of the pattern correspondingly prepared and formed is wide. In the existing photoetching process, when negative photoresist is adopted for photoetching, the pattern of an exposure area is reserved, so that under the condition that exposure light cannot be incident to a photoresist bottom layer, the pattern modified by exposure in the negative photoresist is in an inverted trapezoid shape, namely, the bottom line width of the negative photoresist pattern is smaller than the line width of a mask plate, and therefore, the mask plate with a wider line width is favorable for preparing and forming a photoetching mask pattern with a narrower line width. For a positive photoresist, the exposure area of the top layer of the photoresist is increased compared to the exposure area due to diffraction phenomena of the exposure light. Meanwhile, because it is relatively difficult for exposure light to be incident on the bottom layer of the photoresist, the pattern of the positive photoresist exposed and modified is in an inverted trapezoid shape. Furthermore, because the developing solution is relatively difficult to corrode the photoresist bottom layer during developing, the photoresist pattern remained after developing is in a regular trapezoid with a small gradient angle, so that the line width of the photoresist pattern is greatly increased. In view of the above, the embodiment of the invention also provides a method for preparing a photoresist pattern for a positive photoresist. Fig. 5 is a flowchart of another method for preparing a photoresist pattern according to an embodiment of the present invention, and fig. 6 is a flowchart of a structure of the method for preparing a photoresist pattern shown in fig. 5, and referring to fig. 5 and 6, the method for preparing a photoresist pattern includes:
s210, providing a substrate, wherein the substrate comprises an exposure area and a non-exposure area;
s220, arranging a reflecting structure in the exposure area of the substrate, wherein the reflecting structure comprises a reflecting surface, and the reflecting surface is positioned on the side wall of the reflecting structure;
s230, forming a photoresist layer on the substrate, wherein the photoresist layer covers the exposure area and the non-exposure area;
s240, exposing the photoresist layer in the exposure area to modify the exposed photoresist, wherein the reflection surface of the reflection structure reflects light rays incident on the reflection surface to increase the volume of the modified photoresist close to the substrate, and the sum of the area of the modified photoresist close to the substrate and the contact area of the reflection structure and the substrate in the same exposure area is larger than the modified area of the photoresist far away from the substrate;
corresponding to step e) in fig. 6, it can be understood that after a reasonable sidewall shape is formed during the preparation of the reflective structure, the reflection of the reflective surface on the sidewall to the exposure light can be ensured, and the reflective surface can be reflected to the position where the photoresist is close to the substrate, that is, the bottom layer of the photoresist around the reflective structure, so as to increase the photosensitive modified area of the bottom layer of the photoresist in the exposure region, and form a regular trapezoid exposure modified photoresist pattern in combination with the modified area of the photoresist layer far from the substrate (that is, the top layer).
And S250, developing the photoresist layer to form a photoresist pattern.
In the last step, the photoresist pattern is in a regular trapezoid structure, after the photoresist pattern is developed, the regular trapezoid structure is washed away, and the remained photoresist pattern is in an inverted trapezoid structure, so that the bottom layer line width of the photoresist pattern is narrower compared with the exposure area of the mask, and the photoresist pattern can be utilized to form the photoresist pattern with the narrower line width.
It should be noted here that, in consideration of diffraction of light during exposure, the exposure modification area of the top layer of the photoresist is enlarged, and thus, when forming a positive trapezoid exposure modification photoresist pattern, the photosensitivity and the photosensitive area of the bottom layer need to be further increased, so that the photosensitive modification area of the bottom layer is larger than that of the top layer.
Specifically, when the reflective structure is formed, it is necessary to make the reflective structure satisfy the reflection of the exposure light and make the exposure light reflect to the bottom layer of the photoresist around the reflective structure. Referring to fig. 6(b), the cross-section of the reflective structure may be arranged to gradually increase in a direction perpendicular to the substrate and directed from the photoresist layer to the substrate. At the moment, the side wall formed by the reflecting structure forms a certain included angle with the exposure light which is vertical to the substrate, so that the exposure light can be transmitted in a trend of being parallel to the substrate, and the light sensitivity of the photoresist bottom layer is increased.
Fig. 7 is a schematic diagram of light reflection of the reflective structure shown in fig. 6(b) in a photoresist layer, and referring to fig. 7, alternatively, a line 221 obtained by cutting the reflective surface on the reflective structure 20 by a first plane is a straight line with a plane perpendicular to the substrate, i.e., a plane of paper shown in fig. 7, as the first plane. And, the line may be disposed at an angle α of 30 ° to 80 ° with respect to the plane of the substrate 10.
It will be appreciated that fig. 7 only shows a cross-sectional view of the reflective structure, and that the reflective structure may be shaped according to an actual lithographic pattern. Illustratively, the reflective structure is a line if the lithographic pattern is a line, and a cone if the lithographic pattern is a via. The side wall of the linear or conical reflecting structure is a straight inclined plane, and the included angle between the inclined plane and the substrate is 30-80 degrees, so that when exposure light is reflected, the light can be transmitted in a direction parallel to the substrate, and the photosensitive modification of the photoresist bottom layer can be improved.
Fig. 8 is a schematic diagram of light reflection of another reflective structure in a photoresist layer according to an embodiment of the present invention, and referring to fig. 8, a line 221 obtained by cutting a reflective surface on the reflective structure 20 by a first plane is also a curved line with a plane perpendicular to the substrate, i.e., a plane of paper shown in fig. 8, as the first plane. It can be understood that, in essence, the reflective surface of the reflective structure 20 shown in fig. 8 is a convex curved surface, and the shape of the corresponding exposure-modified photoresist in cross section is a regular trapezoid with a convex side surface. Of course, the line obtained by cutting the reflection surface by the first plane may also be a concave curve, and the shape of the corresponding photoresist on the interface after exposure modification is a regular trapezoid with a concave side surface.
The embodiment of the invention also provides a preparation method of the array substrate, and the preparation method of the array substrate adopts any one of the photoresist pattern preparation methods provided by the embodiments. When various signal lines, film layer patterns, connecting holes and the like on the array substrate are prepared, the photoresist pattern preparation method provided by the embodiment can be adopted to form accurate photoresist patterns, and then the photoresist patterns are etched to form the signal lines, the film layer patterns or the connecting holes.
According to the preparation method of the array substrate, provided by the embodiment of the invention, the substrate is provided when the photoresist pattern is prepared, and the reflecting structure is arranged in the exposure area of the substrate, wherein the reflecting structure comprises a reflecting surface which is positioned on the side wall of the reflecting structure; and then forming a photoresist layer on the substrate, exposing the photoresist layer in the exposure area to modify the exposed photoresist, reflecting the light incident on the reflecting surface of the reflecting structure in the exposure process to increase the volume of the modified photoresist reflected close to the substrate, and finally developing the photoresist layer to finally form an accurate photoresist pattern. According to the embodiment of the invention, exposure light can be incident to the bottom layer of the photoresist layer of the exposure area, so that the photosensitivity of the photoresist at the bottom layer is improved, the problem that the photoresist pattern has errors due to the weak photosensitivity of the bottom layer of the photoresist in the existing exposure process is solved, the accuracy of the photoresist pattern is ensured, and the improvement of the photoetching quality and the preparation of an accurate array substrate are facilitated.
It is to be noted that the foregoing is only illustrative of the preferred embodiments of the present invention and the technical principles employed. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious modifications, rearrangements, combinations and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail by the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the spirit of the present invention, and the scope of the present invention is determined by the scope of the appended claims.
Claims (7)
1. A method of preparing a photoresist pattern, comprising:
providing a substrate comprising an exposed region and a non-exposed region;
arranging a reflecting structure in the exposure area of the substrate, wherein the reflecting structure comprises a reflecting surface, the reflecting surface is positioned on the side wall of the reflecting structure, and the reflecting surface covers the whole side wall of the reflecting structure;
forming a photoresist layer on the substrate, the photoresist layer covering the exposed region and the non-exposed region;
exposing the photoresist layer in the exposure area to modify the exposed photoresist, the reflective surface of the reflective structure reflecting light incident thereon to increase the volume of the modified photoresist near the substrate; the photoresist layer is a positive photoresist layer; after the photoresist layer in the exposure area is exposed; in the same exposure area, the sum of the modified photoresist area of the photoresist layer close to the substrate and the contact area of the photoresist layer and the substrate is larger than the modified photoresist area far away from the substrate; the cross section of the reflecting structure is gradually increased along the direction which is perpendicular to the substrate and is pointed to the substrate by the photoresist layer;
and developing the photoresist layer to form a photoresist pattern.
2. The method of claim 1, wherein the photoresist layer has a thickness greater than a height of the reflective structure.
3. The method of claim 2, wherein disposing a reflective structure within an exposure region of the substrate comprises:
forming a reflective layer on the substrate;
and patterning the reflecting layer by adopting a dry etching process or a wet etching process to form the reflecting structure.
4. The method according to claim 1, wherein a plane perpendicular to the substrate is made a first plane;
a line obtained by cutting the reflecting surface by the first plane is a straight line;
the included angle between the straight line and the plane of the substrate is 30-80 degrees.
5. The method according to claim 1, wherein a plane perpendicular to the substrate is made a first plane;
the line obtained after the reflecting surface is cut by the first plane is a curve.
6. The method of preparing a photoresist pattern according to claim 1, wherein the material of the reflective structure includes at least one of silver, aluminum, molybdenum, and copper.
7. A method for preparing an array substrate, wherein the method for preparing a photoresist pattern according to any one of claims 1 to 6 is used.
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| CN111243945B (en) * | 2020-01-15 | 2022-11-22 | 合肥维信诺科技有限公司 | Patterning, etching and display panel manufacturing method and display panel |
| CN111796706A (en) * | 2020-05-22 | 2020-10-20 | 南昌欧菲显示科技有限公司 | Panel, preparation method thereof, touch display screen and electronic equipment |
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