CN110426619A - IGBT low-frequency noise detection device - Google Patents
IGBT low-frequency noise detection device Download PDFInfo
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- CN110426619A CN110426619A CN201910728583.2A CN201910728583A CN110426619A CN 110426619 A CN110426619 A CN 110426619A CN 201910728583 A CN201910728583 A CN 201910728583A CN 110426619 A CN110426619 A CN 110426619A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2646—Testing of individual semiconductor devices for measuring noise
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Abstract
IGBT low-frequency noise detection device, is related to electronic measuring technology field, solves the damage problem in existing electronic reliability detection to device, and total system includes two parts of hardware testing system and software analysis platform.Hardware system includes power-supply system, four low-noise bias circuit, low-noise preamplifier and high-speed data acquisition card part of module;Software analysis platform is divided into time-domain analysis module, frequency-domain analysis module, data memory module, data read module, signal acquisition module and report generation module.Hardware system therein mainly completes the measurement of IGBT drain voltage noise, software platform mainly completes the display of the time series of low-frequency noise data, and spectrum analysis, the detection of the final low-frequency noise for realizing IGBT device are completed to the noise data that high-speed data acquisition card obtains.The present invention can avoid the irreversible damage in the detection of conventional electronics reliability to device noise, realize the non-destructive testing to IGBT low-frequency noise.
Description
Technical field
The present invention relates to electronic measuring technology fields, and in particular to a kind of low-frequency noise for IGBT device is examined
The device of survey.
Background technique
IGBT (Insulated Gate Bipolar Transistor, insulated gate bipolar transistor) combines bipolar
Transistor npn npn (BJT) low saturation voltage, high current and Metal Oxide Semiconductor Field Effect Transistor (MOSFET) are opened at a high speed
It closes and the characteristics of voltage drives, has that voltage control, driving are simple, switching frequency is high, switching loss is small, input impedance is high, defeated
The advantages such as impedance is low out, are widely used in power power equipment.IGBT is widely used in consumer electronics, Industry Control, new
The fields such as energy power generation, smart grid, locomotive traction, aerospace, high-speed rail and urban track traffic, become the master of converter plant
Device for power switching is wanted, reliability is directly related to the safe operation of entire electrical system.For example, Wind turbines critical component
In failure, the current transformer failure frequency is highest, up to 0.2 time/platform, and IGBT is that failure rate is highest in current transformer failure
Device, up to 30% or more;When IGBT is in control system (such as space transporter), reliability is directly related to
The track operating condition of entire rocket.In order to avoid the system crash due to caused by IGBT device failure causes the accident generation and warp
Ji loss, needs to be continuously updated and extend IGBT fault diagnosis technology and reliability estimation method.
Low-frequency noise is very sensitive to the defect of electronic device, existing studies have shown that even if special with identical I-V
Property device in but it can be observed that very big difference low-frequency noise.Meanwhile low-frequency noise can be used to study in electronic device
The carrier fluctuation occurred on portion's micro-scale and trap generate, compound phenomenon, thus as microelectronic material and device
The characterization tool of q&r.
For the noise research of different electronic components, different dedicated noise measurement systems is needed.For example, integrated fortune
The noise measurement system that the determination of the noise coefficient of calculation amplifier is required includes low noise power supply, preamplifier, known bandwidth
Filter and voltmeter;The measurement of transistor noise figure then needs additional low noise bias source.
Summary of the invention
The present invention is the damage problem solved in existing electronic reliability detection to device, is provided a kind of
IGBT low-frequency noise detection device.
IGBT low-frequency noise detection device, including power-supply system, low-noise bias circuit, low-noise preamplifier, height
Fast data collecting card and analysis module;
The output end of the power-supply system eliminates interference of the electromagnetic field to measurement using EMI low-pass filter, and low noise is inclined
Circuits provide the bias voltage of continuous variable for IGBT device to be measured, the IGBT device output low frequency noise signal to be measured,
The preamplifier amplifies the low-frequency noise signal, and is realized by data collecting card to making an uproar after amplification
Display and analysis to low-frequency noise signal time series and frequency spectrum are finally realized in the acquisition of acoustical signal by analysis module.
Beneficial effects of the present invention: IGBT low-frequency noise detection device of the present invention is designed by software and hardware,
It can avoid the irreversible damage in the detection of conventional electronics reliability to device noise, realize the nothing to IGBT low-frequency noise
Damage detection, so as to subsequently through the reliability of IGBT low-frequency noise specificity analysis device.
Detailed description of the invention
Fig. 1 is the functional block diagram of IGBT low-frequency noise detection device of the present invention;
Fig. 2 is low-noise programmable linear power source circuit figure;
Fig. 3 is electromagnetic interface filter circuit diagram;
Fig. 4 is low-noise preamplifier entire block diagram;
Fig. 5 is software platform front panel schematic diagram;
Fig. 6 is IGBT device low-frequency noise time series effect picture;
Fig. 7 is IGBT device spectrum analysis effect picture;
Fig. 8 is IGBT device power spectral density plot effect picture.
Specific embodiment
Specific embodiment one illustrates present embodiment, IGBT low-frequency noise detection device in conjunction with Fig. 1 to Fig. 8, comprising:
Two parts of hardware testing system and software analysis platform.
In conjunction with Fig. 1, the hardware testing system includes power-supply system, low-noise bias circuit, low-noise preamplifier
And four part of module of high-speed data acquisition card.The software analysis platform is mainly analysis module, and the analysis module is divided into
Time-domain analysis module, frequency-domain analysis module, data memory module, data read module, signal acquisition module and report generation mould
Block;The low noise linear stabilized power supply is that entire measuring system is powered, while electromagnetic interface filter eliminates electromagnetic field to measurement
Interference, low-noise bias circuit can provide the bias voltage of continuous variable for measured device, and measured device is made to be in difference
Working condition and low-frequency noise signal is exported, then preamplifier puts faint low-frequency noise signal
Greatly, and by data collecting card the acquisition to noise signal after amplification is realized, finally by software desk Implementation to low-frequency noise signal
The display and analysis of time series and frequency spectrum.
In present embodiment, the introducing of the electromagnetic interface filter is primarily to eliminate the presence due to electromagnetic field, it is known that electricity
Magnetic field can generate the induced electricity that interference is generated to the normal operation of electronic equipment on the power supply line and signal wire of electronic equipment
Pressure and electric current, the presence that can effectively solve in low-frequency noise detection process by electromagnetic field that is introduced into of electromagnetic interface filter are brought
Voltage and current error.
The low-noise bias circuit is designed by periphery match circuit, provides continuous variable for IGBT device to be measured
Bias voltage makes IGBT device to be measured be in different working conditions, and the low frequency of IGBT device to be measured under this state is made an uproar
Acoustical signal is exported to subsequent low-noise preamplifier.
The low-noise preamplifier is that the design of the amplifying circuit of double mode can by the switching to different channels
Realize the measurement to voltage noise and current noise signal.
Embodiment is described with reference to Fig. 2, and low noise linear stabilized power supply can using linear regulator chip LM317 generation
The positive supply of tune, LM337 generate adjustable negative supply, and voltage adjustable extent is respectively 1.2V~37V and -1.2V~37V.It should
The input terminal of regulated power supply is nickel-metal hydride battery group, by taking positive supply part as an example, capacitor C11、 C14、C15It is the filtering to battery pack
Capacitor, capacitor C16For improving the rejection ability of ripple, C10、C13Output voltage is filtered, the stability of output is improved.
In order to further decrease the ripple factor of power supply, second order passive low-pass filter is used in output end, takes R=10K, C=1uF,
Cutoff frequency is 15.8Hz.It has extremely low noise level in IGBT low-frequency noise measurement frequency range, in typical integrated fortune
Calculating maximum noise power when APS amplifier power supply voltage is+10V and -5V is respectivelyWith
It is fully able to meet the requirement of IGBT device low-frequency noise measurement.
Embodiment is described with reference to Fig. 3, and the electromagnetic interface filter is level Four electromagnetic interface filter, wherein every dual stage filter
Share a common mode capacitance;Wherein, LcmxAnd CMxRespectively represent common mode inductance and common mode capacitance, common filtering common mode interference;Electricity
Hold CdxIt is the differential mode capacitor of filtering circuit DM EMI.
Embodiment is described with reference to Fig. 4, and the low-frequency noise signal of IGBT device to be measured includes that current noise and voltage are made an uproar
Two kinds of sound, in order to measure both low-frequency noise signals simultaneously, the design proposes the design of the amplifying circuit of double mode, passes through
Measurement, it can be achieved that voltage noise and current noise signal is switched to different channels.It is obtained by the drain electrode of IGBT device
Voltage or current noise signal have fully differential input-output amplifier section to carry out the amplification of the first order, later can be by selecting not
Amplify voltage or current signal with Measurement channel.Voltage amplification channel therein uses cross-spectrum measuring technique, can put in offer
While big, by auto-correlation cross-spectrum, the influence of itself equivalent inpnt voltage noise is eliminated.
Embodiment is described with reference to Fig.5, is divided into time-domain analysis module, frequency-domain analysis mould for entire software analysis platform
Block, data memory module, data read module, signal acquisition module and report generation module.The design philosophy of front panel is, low
Frequency Time sequence of noise and time series analysis can be shown to same interface.When the user clicks when frequency-domain waveform, shown in intermediate
Show that region can display in real time the amplitude spectrum, phase spectrum and power spectrum curve that noise data spectrum analysis obtains.User can lead to
Mouse click is crossed, conveniently and efficiently realizes the realization and display of each spectrum analysis function.
In present embodiment, the software platform is initialized first when system is run, including acquisition card initialization,
Waveform diagram initialization, button initialization etc..The software platform front panel is the human-computer interaction of entire low-frequency noise detection platform
Interface can allow user to understand the testing process and simple operations software platform of entire software platform.
Low-frequency noise time series analysis mainly includes mean-square value, average value, standard variance, signal peak-to-peak value and maximum
The detection of minimum value.Low frequency noise spectral analysis mainly includes that amplitude spectrum detection, phase spectrum detection and power spectral density calculate simultaneously
Display.
The acquisition of IGBT device low-frequency noise time series and frequency spectrum data mainly includes the judgement quickly tested, device to be measured
Four parts of acquisition of the addition of part information, the setting of capture card parameter and time series and frequency spectrum.Wherein before starting test
If fruit determines the existing detection history of measured device, quick test can be started.If not being detected, then by the correlation of measured device
The information such as information, including device type, device classification, device production manufacturer are added to software platform, and set capture card parameter,
Start to test later, acquires measured device low-frequency noise time series and frequency spectrum data.
Illustrate present embodiment in conjunction with Fig. 6-Fig. 8, after the Accuracy Verification to system, to selected IGBT device
Carry out low-frequency noise detection.Using designed IGBT low-frequency noise detection platform to the low frequency of the IGBT device of normal work
Time sequence of noise data collection and analysis.IGBT low-frequency noise time series data is one group of rambling random sequence,
Its mean value tends to 0, and low frequency noise component is flooded by white noise completely, and it is special can not effectively to characterize IGBT low-frequency noise
Property.IGBT device result of spectrum analysis figure, from top to bottom respectively IGBT low-frequency noise data amplitude spectrum, phase spectrum and power spectrum
Curve.Wherein, IGBT low-frequency noise power spectrum can most reflect IGBT device low-frequency noise characteristic, and in low-frequency range, IGBT is low
Frequency noise shows as apparent 1/f noise trend, i.e. its power spectral density is reduced with the increase of frequency;In intermediate frequency range,
IGBT low-frequency noise data are mainly accounted for by white noise component leading;In high-frequency range, IGBT low-frequency noise power spectral density table
Now trend is composed for apparent Lorentz.
It, will be by frequency spectrum point in order to more intuitively compare the low-frequency noise power skin density curve of two class IGBT devices
Low-frequency noise data after analysis are provided in the form of examining report by storage export.Tested normal IGBT device and process
The all-bottom sound power spectrum data comparison diagram of two class IGBT devices after high temperature reverse bias experiment.For normal IGBT device, In
Become in 0.1Hz-100Hz frequency range and 1/f noise trend is presented, is i.e. its power spectral density is reduced with the raising of frequency;But
In 100Hz-100kHz frequency range, can be observed apparent Lorentz spectrum trend, the noise component(s) may for g-r noise or
RTS noise;And the low-frequency noise power spectral density spectrum overall noise amplitude of the IGBT device after high temperature reverse bias is tested is bright
It is aobvious to increase and reduced with the increase of frequency, there is very big fluctuation in the low-frequency range less than 100Hz.
Claims (5)
1.IGBT low-frequency noise detection device, it is characterized in that: including being put before power-supply system, low-noise bias circuit, low noise
Big device, high-speed data acquisition card and analysis module;
The output end of the power-supply system eliminates interference of the electromagnetic field to measurement, low noise bias electricity using EMI low-pass filter
Road provides the bias voltage of continuous variable, the IGBT device output low frequency noise signal to be measured for IGBT device to be measured;
The preamplifier amplifies the low-frequency noise signal, and is believed by data collecting card realization noise after amplification
Number acquisition, display and analysis to low-frequency noise signal time series and frequency spectrum is finally realized by analysis module.
2. IGBT low-frequency noise detection device according to claim 1, it is characterised in that: the power-supply system is low noise
Linear stabilized power supply is generated adjustable positive supply using linear regulator chip LM317, is generated using linear regulator chip LM337
Adjustable negative supply, voltage adjustable extent are respectively 1.2V~37V and -1.2V~-37V.
3. IGBT low-frequency noise detection device according to claim 2, it is characterised in that: the input terminal of the regulated power supply
For nickel-metal hydride battery group, filtered in output end using EMI low-pass filter.
4. IGBT low-frequency noise detection device according to claim 3, it is characterised in that: the EMI low-pass filter is
Level Four electromagnetic interface filter, every dual stage filter share a common mode capacitance.
5. requiring the IGBT low-frequency noise detection device according to right 1, it is characterised in that: the IGBT device to be measured it is low
Frequency noise signal includes current noise signal and voltage noise signals, and the current noise signal and voltage noise signals pass through low
The fully differential input-output amplifier section of noise preamps carries out first order amplification, then preposition by the low noise
The other Measurement channels amplification voltage or current signal of amplifier.
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111721401A (en) * | 2020-06-17 | 2020-09-29 | 广州广电计量检测股份有限公司 | Low-frequency noise analysis system and method |
CN112505146A (en) * | 2020-11-26 | 2021-03-16 | 电子科技大学 | IGBT module bonding wire fracture detection method based on ultrasonic reflection |
CN112698121A (en) * | 2020-11-19 | 2021-04-23 | 中国电子产品可靠性与环境试验研究所((工业和信息化部电子第五研究所)(中国赛宝实验室)) | Low-frequency noise test system and reliability test method |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102338846A (en) * | 2010-07-22 | 2012-02-01 | 中国科学院微电子研究所 | Reliability evaluation method of GaN-based HEMT device |
CN104020365A (en) * | 2014-06-04 | 2014-09-03 | 电子科技大学 | Method for testing low-frequency noise of amorphous silicon membrane |
CN108614204A (en) * | 2018-05-29 | 2018-10-02 | 长春理工大学 | A kind of IGBT device low-frequency noise method for evaluating reliability |
CN109212336A (en) * | 2018-10-24 | 2019-01-15 | 西安电子科技大学 | A kind of Method for Measuring Low Frequency Noise of portable ultra-weak electronic signal |
US20190204375A1 (en) * | 2017-12-29 | 2019-07-04 | Texas Instruments Incorporated | Direct current measurement of 1/f transistor noise |
-
2019
- 2019-08-08 CN CN201910728583.2A patent/CN110426619B/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102338846A (en) * | 2010-07-22 | 2012-02-01 | 中国科学院微电子研究所 | Reliability evaluation method of GaN-based HEMT device |
CN104020365A (en) * | 2014-06-04 | 2014-09-03 | 电子科技大学 | Method for testing low-frequency noise of amorphous silicon membrane |
US20190204375A1 (en) * | 2017-12-29 | 2019-07-04 | Texas Instruments Incorporated | Direct current measurement of 1/f transistor noise |
CN108614204A (en) * | 2018-05-29 | 2018-10-02 | 长春理工大学 | A kind of IGBT device low-frequency noise method for evaluating reliability |
CN109212336A (en) * | 2018-10-24 | 2019-01-15 | 西安电子科技大学 | A kind of Method for Measuring Low Frequency Noise of portable ultra-weak electronic signal |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111721401A (en) * | 2020-06-17 | 2020-09-29 | 广州广电计量检测股份有限公司 | Low-frequency noise analysis system and method |
CN111721401B (en) * | 2020-06-17 | 2022-03-08 | 广州广电计量检测股份有限公司 | Low-frequency noise analysis system and method |
CN112698121A (en) * | 2020-11-19 | 2021-04-23 | 中国电子产品可靠性与环境试验研究所((工业和信息化部电子第五研究所)(中国赛宝实验室)) | Low-frequency noise test system and reliability test method |
CN112505146A (en) * | 2020-11-26 | 2021-03-16 | 电子科技大学 | IGBT module bonding wire fracture detection method based on ultrasonic reflection |
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