CN110426619A - IGBT low-frequency noise detection device - Google Patents

IGBT low-frequency noise detection device Download PDF

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Publication number
CN110426619A
CN110426619A CN201910728583.2A CN201910728583A CN110426619A CN 110426619 A CN110426619 A CN 110426619A CN 201910728583 A CN201910728583 A CN 201910728583A CN 110426619 A CN110426619 A CN 110426619A
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low
noise
igbt
frequency noise
frequency
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CN110426619B (en
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陈晓娟
张新超
曲畅
吴洁
南春岩
李宁
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Changchun University of Science and Technology
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Changchun University of Science and Technology
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26Testing of individual semiconductor devices
    • G01R31/2646Testing of individual semiconductor devices for measuring noise

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  • General Physics & Mathematics (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)

Abstract

IGBT low-frequency noise detection device, is related to electronic measuring technology field, solves the damage problem in existing electronic reliability detection to device, and total system includes two parts of hardware testing system and software analysis platform.Hardware system includes power-supply system, four low-noise bias circuit, low-noise preamplifier and high-speed data acquisition card part of module;Software analysis platform is divided into time-domain analysis module, frequency-domain analysis module, data memory module, data read module, signal acquisition module and report generation module.Hardware system therein mainly completes the measurement of IGBT drain voltage noise, software platform mainly completes the display of the time series of low-frequency noise data, and spectrum analysis, the detection of the final low-frequency noise for realizing IGBT device are completed to the noise data that high-speed data acquisition card obtains.The present invention can avoid the irreversible damage in the detection of conventional electronics reliability to device noise, realize the non-destructive testing to IGBT low-frequency noise.

Description

IGBT low-frequency noise detection device
Technical field
The present invention relates to electronic measuring technology fields, and in particular to a kind of low-frequency noise for IGBT device is examined The device of survey.
Background technique
IGBT (Insulated Gate Bipolar Transistor, insulated gate bipolar transistor) combines bipolar Transistor npn npn (BJT) low saturation voltage, high current and Metal Oxide Semiconductor Field Effect Transistor (MOSFET) are opened at a high speed It closes and the characteristics of voltage drives, has that voltage control, driving are simple, switching frequency is high, switching loss is small, input impedance is high, defeated The advantages such as impedance is low out, are widely used in power power equipment.IGBT is widely used in consumer electronics, Industry Control, new The fields such as energy power generation, smart grid, locomotive traction, aerospace, high-speed rail and urban track traffic, become the master of converter plant Device for power switching is wanted, reliability is directly related to the safe operation of entire electrical system.For example, Wind turbines critical component In failure, the current transformer failure frequency is highest, up to 0.2 time/platform, and IGBT is that failure rate is highest in current transformer failure Device, up to 30% or more;When IGBT is in control system (such as space transporter), reliability is directly related to The track operating condition of entire rocket.In order to avoid the system crash due to caused by IGBT device failure causes the accident generation and warp Ji loss, needs to be continuously updated and extend IGBT fault diagnosis technology and reliability estimation method.
Low-frequency noise is very sensitive to the defect of electronic device, existing studies have shown that even if special with identical I-V Property device in but it can be observed that very big difference low-frequency noise.Meanwhile low-frequency noise can be used to study in electronic device The carrier fluctuation occurred on portion's micro-scale and trap generate, compound phenomenon, thus as microelectronic material and device The characterization tool of q&r.
For the noise research of different electronic components, different dedicated noise measurement systems is needed.For example, integrated fortune The noise measurement system that the determination of the noise coefficient of calculation amplifier is required includes low noise power supply, preamplifier, known bandwidth Filter and voltmeter;The measurement of transistor noise figure then needs additional low noise bias source.
Summary of the invention
The present invention is the damage problem solved in existing electronic reliability detection to device, is provided a kind of IGBT low-frequency noise detection device.
IGBT low-frequency noise detection device, including power-supply system, low-noise bias circuit, low-noise preamplifier, height Fast data collecting card and analysis module;
The output end of the power-supply system eliminates interference of the electromagnetic field to measurement using EMI low-pass filter, and low noise is inclined Circuits provide the bias voltage of continuous variable for IGBT device to be measured, the IGBT device output low frequency noise signal to be measured,
The preamplifier amplifies the low-frequency noise signal, and is realized by data collecting card to making an uproar after amplification Display and analysis to low-frequency noise signal time series and frequency spectrum are finally realized in the acquisition of acoustical signal by analysis module.
Beneficial effects of the present invention: IGBT low-frequency noise detection device of the present invention is designed by software and hardware, It can avoid the irreversible damage in the detection of conventional electronics reliability to device noise, realize the nothing to IGBT low-frequency noise Damage detection, so as to subsequently through the reliability of IGBT low-frequency noise specificity analysis device.
Detailed description of the invention
Fig. 1 is the functional block diagram of IGBT low-frequency noise detection device of the present invention;
Fig. 2 is low-noise programmable linear power source circuit figure;
Fig. 3 is electromagnetic interface filter circuit diagram;
Fig. 4 is low-noise preamplifier entire block diagram;
Fig. 5 is software platform front panel schematic diagram;
Fig. 6 is IGBT device low-frequency noise time series effect picture;
Fig. 7 is IGBT device spectrum analysis effect picture;
Fig. 8 is IGBT device power spectral density plot effect picture.
Specific embodiment
Specific embodiment one illustrates present embodiment, IGBT low-frequency noise detection device in conjunction with Fig. 1 to Fig. 8, comprising: Two parts of hardware testing system and software analysis platform.
In conjunction with Fig. 1, the hardware testing system includes power-supply system, low-noise bias circuit, low-noise preamplifier And four part of module of high-speed data acquisition card.The software analysis platform is mainly analysis module, and the analysis module is divided into Time-domain analysis module, frequency-domain analysis module, data memory module, data read module, signal acquisition module and report generation mould Block;The low noise linear stabilized power supply is that entire measuring system is powered, while electromagnetic interface filter eliminates electromagnetic field to measurement Interference, low-noise bias circuit can provide the bias voltage of continuous variable for measured device, and measured device is made to be in difference Working condition and low-frequency noise signal is exported, then preamplifier puts faint low-frequency noise signal Greatly, and by data collecting card the acquisition to noise signal after amplification is realized, finally by software desk Implementation to low-frequency noise signal The display and analysis of time series and frequency spectrum.
In present embodiment, the introducing of the electromagnetic interface filter is primarily to eliminate the presence due to electromagnetic field, it is known that electricity Magnetic field can generate the induced electricity that interference is generated to the normal operation of electronic equipment on the power supply line and signal wire of electronic equipment Pressure and electric current, the presence that can effectively solve in low-frequency noise detection process by electromagnetic field that is introduced into of electromagnetic interface filter are brought Voltage and current error.
The low-noise bias circuit is designed by periphery match circuit, provides continuous variable for IGBT device to be measured Bias voltage makes IGBT device to be measured be in different working conditions, and the low frequency of IGBT device to be measured under this state is made an uproar Acoustical signal is exported to subsequent low-noise preamplifier.
The low-noise preamplifier is that the design of the amplifying circuit of double mode can by the switching to different channels Realize the measurement to voltage noise and current noise signal.
Embodiment is described with reference to Fig. 2, and low noise linear stabilized power supply can using linear regulator chip LM317 generation The positive supply of tune, LM337 generate adjustable negative supply, and voltage adjustable extent is respectively 1.2V~37V and -1.2V~37V.It should The input terminal of regulated power supply is nickel-metal hydride battery group, by taking positive supply part as an example, capacitor C11、 C14、C15It is the filtering to battery pack Capacitor, capacitor C16For improving the rejection ability of ripple, C10、C13Output voltage is filtered, the stability of output is improved. In order to further decrease the ripple factor of power supply, second order passive low-pass filter is used in output end, takes R=10K, C=1uF, Cutoff frequency is 15.8Hz.It has extremely low noise level in IGBT low-frequency noise measurement frequency range, in typical integrated fortune Calculating maximum noise power when APS amplifier power supply voltage is+10V and -5V is respectivelyWith It is fully able to meet the requirement of IGBT device low-frequency noise measurement.
Embodiment is described with reference to Fig. 3, and the electromagnetic interface filter is level Four electromagnetic interface filter, wherein every dual stage filter Share a common mode capacitance;Wherein, LcmxAnd CMxRespectively represent common mode inductance and common mode capacitance, common filtering common mode interference;Electricity Hold CdxIt is the differential mode capacitor of filtering circuit DM EMI.
Embodiment is described with reference to Fig. 4, and the low-frequency noise signal of IGBT device to be measured includes that current noise and voltage are made an uproar Two kinds of sound, in order to measure both low-frequency noise signals simultaneously, the design proposes the design of the amplifying circuit of double mode, passes through Measurement, it can be achieved that voltage noise and current noise signal is switched to different channels.It is obtained by the drain electrode of IGBT device Voltage or current noise signal have fully differential input-output amplifier section to carry out the amplification of the first order, later can be by selecting not Amplify voltage or current signal with Measurement channel.Voltage amplification channel therein uses cross-spectrum measuring technique, can put in offer While big, by auto-correlation cross-spectrum, the influence of itself equivalent inpnt voltage noise is eliminated.
Embodiment is described with reference to Fig.5, is divided into time-domain analysis module, frequency-domain analysis mould for entire software analysis platform Block, data memory module, data read module, signal acquisition module and report generation module.The design philosophy of front panel is, low Frequency Time sequence of noise and time series analysis can be shown to same interface.When the user clicks when frequency-domain waveform, shown in intermediate Show that region can display in real time the amplitude spectrum, phase spectrum and power spectrum curve that noise data spectrum analysis obtains.User can lead to Mouse click is crossed, conveniently and efficiently realizes the realization and display of each spectrum analysis function.
In present embodiment, the software platform is initialized first when system is run, including acquisition card initialization, Waveform diagram initialization, button initialization etc..The software platform front panel is the human-computer interaction of entire low-frequency noise detection platform Interface can allow user to understand the testing process and simple operations software platform of entire software platform.
Low-frequency noise time series analysis mainly includes mean-square value, average value, standard variance, signal peak-to-peak value and maximum The detection of minimum value.Low frequency noise spectral analysis mainly includes that amplitude spectrum detection, phase spectrum detection and power spectral density calculate simultaneously Display.
The acquisition of IGBT device low-frequency noise time series and frequency spectrum data mainly includes the judgement quickly tested, device to be measured Four parts of acquisition of the addition of part information, the setting of capture card parameter and time series and frequency spectrum.Wherein before starting test If fruit determines the existing detection history of measured device, quick test can be started.If not being detected, then by the correlation of measured device The information such as information, including device type, device classification, device production manufacturer are added to software platform, and set capture card parameter, Start to test later, acquires measured device low-frequency noise time series and frequency spectrum data.
Illustrate present embodiment in conjunction with Fig. 6-Fig. 8, after the Accuracy Verification to system, to selected IGBT device Carry out low-frequency noise detection.Using designed IGBT low-frequency noise detection platform to the low frequency of the IGBT device of normal work Time sequence of noise data collection and analysis.IGBT low-frequency noise time series data is one group of rambling random sequence, Its mean value tends to 0, and low frequency noise component is flooded by white noise completely, and it is special can not effectively to characterize IGBT low-frequency noise Property.IGBT device result of spectrum analysis figure, from top to bottom respectively IGBT low-frequency noise data amplitude spectrum, phase spectrum and power spectrum Curve.Wherein, IGBT low-frequency noise power spectrum can most reflect IGBT device low-frequency noise characteristic, and in low-frequency range, IGBT is low Frequency noise shows as apparent 1/f noise trend, i.e. its power spectral density is reduced with the increase of frequency;In intermediate frequency range, IGBT low-frequency noise data are mainly accounted for by white noise component leading;In high-frequency range, IGBT low-frequency noise power spectral density table Now trend is composed for apparent Lorentz.
It, will be by frequency spectrum point in order to more intuitively compare the low-frequency noise power skin density curve of two class IGBT devices Low-frequency noise data after analysis are provided in the form of examining report by storage export.Tested normal IGBT device and process The all-bottom sound power spectrum data comparison diagram of two class IGBT devices after high temperature reverse bias experiment.For normal IGBT device, In Become in 0.1Hz-100Hz frequency range and 1/f noise trend is presented, is i.e. its power spectral density is reduced with the raising of frequency;But In 100Hz-100kHz frequency range, can be observed apparent Lorentz spectrum trend, the noise component(s) may for g-r noise or RTS noise;And the low-frequency noise power spectral density spectrum overall noise amplitude of the IGBT device after high temperature reverse bias is tested is bright It is aobvious to increase and reduced with the increase of frequency, there is very big fluctuation in the low-frequency range less than 100Hz.

Claims (5)

1.IGBT low-frequency noise detection device, it is characterized in that: including being put before power-supply system, low-noise bias circuit, low noise Big device, high-speed data acquisition card and analysis module;
The output end of the power-supply system eliminates interference of the electromagnetic field to measurement, low noise bias electricity using EMI low-pass filter Road provides the bias voltage of continuous variable, the IGBT device output low frequency noise signal to be measured for IGBT device to be measured;
The preamplifier amplifies the low-frequency noise signal, and is believed by data collecting card realization noise after amplification Number acquisition, display and analysis to low-frequency noise signal time series and frequency spectrum is finally realized by analysis module.
2. IGBT low-frequency noise detection device according to claim 1, it is characterised in that: the power-supply system is low noise Linear stabilized power supply is generated adjustable positive supply using linear regulator chip LM317, is generated using linear regulator chip LM337 Adjustable negative supply, voltage adjustable extent are respectively 1.2V~37V and -1.2V~-37V.
3. IGBT low-frequency noise detection device according to claim 2, it is characterised in that: the input terminal of the regulated power supply For nickel-metal hydride battery group, filtered in output end using EMI low-pass filter.
4. IGBT low-frequency noise detection device according to claim 3, it is characterised in that: the EMI low-pass filter is Level Four electromagnetic interface filter, every dual stage filter share a common mode capacitance.
5. requiring the IGBT low-frequency noise detection device according to right 1, it is characterised in that: the IGBT device to be measured it is low Frequency noise signal includes current noise signal and voltage noise signals, and the current noise signal and voltage noise signals pass through low The fully differential input-output amplifier section of noise preamps carries out first order amplification, then preposition by the low noise The other Measurement channels amplification voltage or current signal of amplifier.
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111721401A (en) * 2020-06-17 2020-09-29 广州广电计量检测股份有限公司 Low-frequency noise analysis system and method
CN112505146A (en) * 2020-11-26 2021-03-16 电子科技大学 IGBT module bonding wire fracture detection method based on ultrasonic reflection
CN112698121A (en) * 2020-11-19 2021-04-23 中国电子产品可靠性与环境试验研究所((工业和信息化部电子第五研究所)(中国赛宝实验室)) Low-frequency noise test system and reliability test method

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CN104020365A (en) * 2014-06-04 2014-09-03 电子科技大学 Method for testing low-frequency noise of amorphous silicon membrane
CN108614204A (en) * 2018-05-29 2018-10-02 长春理工大学 A kind of IGBT device low-frequency noise method for evaluating reliability
CN109212336A (en) * 2018-10-24 2019-01-15 西安电子科技大学 A kind of Method for Measuring Low Frequency Noise of portable ultra-weak electronic signal
US20190204375A1 (en) * 2017-12-29 2019-07-04 Texas Instruments Incorporated Direct current measurement of 1/f transistor noise

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CN102338846A (en) * 2010-07-22 2012-02-01 中国科学院微电子研究所 Reliability evaluation method of GaN-based HEMT device
CN104020365A (en) * 2014-06-04 2014-09-03 电子科技大学 Method for testing low-frequency noise of amorphous silicon membrane
US20190204375A1 (en) * 2017-12-29 2019-07-04 Texas Instruments Incorporated Direct current measurement of 1/f transistor noise
CN108614204A (en) * 2018-05-29 2018-10-02 长春理工大学 A kind of IGBT device low-frequency noise method for evaluating reliability
CN109212336A (en) * 2018-10-24 2019-01-15 西安电子科技大学 A kind of Method for Measuring Low Frequency Noise of portable ultra-weak electronic signal

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111721401A (en) * 2020-06-17 2020-09-29 广州广电计量检测股份有限公司 Low-frequency noise analysis system and method
CN111721401B (en) * 2020-06-17 2022-03-08 广州广电计量检测股份有限公司 Low-frequency noise analysis system and method
CN112698121A (en) * 2020-11-19 2021-04-23 中国电子产品可靠性与环境试验研究所((工业和信息化部电子第五研究所)(中国赛宝实验室)) Low-frequency noise test system and reliability test method
CN112505146A (en) * 2020-11-26 2021-03-16 电子科技大学 IGBT module bonding wire fracture detection method based on ultrasonic reflection

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