CN110423102A - 一种适用于低电阻引线的陶瓷封装外壳材料 - Google Patents
一种适用于低电阻引线的陶瓷封装外壳材料 Download PDFInfo
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Abstract
本发明公开了一种适用于低电阻引线的陶瓷封装外壳材料,包括以下成分:二氧化硅、氟化钙、硼砂、氧化钡、氧化钾、着色剂和氧化铝。该材料通过原料配比的调整,可以达到显著降低介质损耗的技术效果;同时由于加入氟化钙和硼砂,本发明的陶瓷封装外壳材料制备过程中的烧结温度显著降低,减少了能耗。
Description
技术领域
本发明涉及陶瓷封装材料技术领域,尤其涉及一种适用于低电阻引线的陶瓷封装外壳材料。
背景技术
近年来,在半导体技术飞速发展的带动下,电子元器件不断向小型化、集成化和高频化方向发展。
常规氧化铝陶瓷的烧结温度在 1500℃以上,对烧成设备有较高的要求,需要高温氢气烧结炉,对能源的消耗也相当大,如电力、氢气等,所以制造成本一直居高不下,而且较高的烧结温度也限制了其只能采用难熔的 W、Mo 等金属作为导体材料。W、Mo材料的金属化电阻大,导体损耗高,不能完全满足高速、高频领域的应用。LTCC(低温共烧陶瓷材料)虽可以使用金、银、铜等低电阻导体,但为了降低烧结温度而加入了大量玻璃成分,从而导致其抗弯强度不足 200Mpa。抗弯强度的降低导致了其可靠性的下降,在稍大一些的冲击下易出现裂纹或发生断裂,造成产品出现严重的失效现象。此外LTCC低的抗弯强度也限制了封装基板的厚度,不利于超薄封装形式的应用,从而限制了封装的进一步小型化。
目前国内公开的可以匹配低电阻导体材料,同时又保持较高机械性能的陶瓷封装材料仍较少。中国发明专利CN102503377A公开了一种高强度半导体封装陶瓷材料及其制作方法,所用原料按质量百分比由以下物质组成:玻璃粉15-25%,着色剂5-15%,余量为氧化铝粉料。该陶瓷材料机械强度高,烧结温度较低,可以使用铜-钨作为配套的导体材料,其电导率大大提高。但其介电损耗仍有待改良,故本发明提供了一种适用于低电阻引线的陶瓷封装外壳材料。
发明内容
基于背景技术存在的技术问题,本发明提出了一种适用于低电阻引线的陶瓷封装外壳材料。
本发明的技术方案如下:
一种适用于低电阻引线的陶瓷封装外壳材料,包括以下成分:二氧化硅、氟化钙、硼砂、氧化钡、氧化钾、着色剂和氧化铝。
一种适用于低电阻引线的陶瓷封装外壳材料,由以下重量百分比的成分组成:二氧化硅 6-12%、氟化钙 1-3%、硼砂 1-2%、氧化钡 2-5%、氧化钾 0.5-1%、着色剂 6-15%和氧化铝。
优选的,所述的着色剂为二氧化钛、氧化铜、三氧化二铬、氧化亚钴中的一种或者多种的组合。
优选的,所述的氧化铝为α相氧化铝,纯度>99.9%。
优选的,所述的二氧化硅的粒径小于100nm、其余原料的粒径小于1μm。
优选的,所述的适用于低电阻引线的陶瓷封装外壳材料的制备方法,包括以下步骤:
A、将各种原料混合均匀;
B、成型;
C、将成型后在氮气与氢气的比例为1:(1-3)气氛中进行烧结,烧结温度为 800-1000℃,所述氮气与氢气的比例为体积比。
本发明的有益之处在于:本发明的适用于低电阻引线的陶瓷封装外壳材料,,包括以下成分:二氧化硅、氟化钙、硼砂、氧化钡、氧化钾、着色剂和氧化铝。该材料通过原料配比的调整,可以达到显著降低介质损耗的技术效果;同时由于加入氟化钙和硼砂,本发明的陶瓷封装外壳材料制备过程中的烧结温度显著降低,减少了能耗。
具体实施方式
实施例1:
一种适用于低电阻引线的陶瓷封装外壳材料,由以下重量百分比的成分组成:二氧化硅 8%、氟化钙 1.5%、硼砂 1.2%、氧化钡 3.5%、氧化钾 0.7%、着色剂 12%和氧化铝。
所述的着色剂为二氧化钛和三氧化二铬质量比为1:1的混合物。
所述的氧化铝为α相氧化铝,纯度>99.9%。
所述的二氧化硅的粒径小于100nm、其余原料的粒径小于1μm。
所述的适用于低电阻引线的陶瓷封装外壳材料的制备方法,包括以下步骤:
A、将各种原料混合均匀;
B、成型;
C、将成型后在氮气与氢气的比例为1:1气氛中进行烧结,烧结温度为 870℃,所述氮气与氢气的比例为体积比。
所制高强度半导体封装陶瓷材料的主要技术指标如下 :
抗弯强度>300MPa
介电常数 8.7(1MHz)、8.2(10GHz)
介质损耗 5.8×10-6(1MHz)、3.2×10-5(10GHz)
成瓷颜色:黑色
实施例2:
一种适用于低电阻引线的陶瓷封装外壳材料,由以下重量百分比的成分组成:二氧化硅 12%、氟化钙 1%、硼砂 2%、氧化钡 2%、氧化钾 1%、着色剂 7%和氧化铝。
所述的着色剂为二氧化钛和氧化亚钴质量比为2.5:1的混合物。
所述的氧化铝为α相氧化铝,纯度>99.9%。
所述的二氧化硅的粒径小于100nm、其余原料的粒径小于1μm。
所述的适用于低电阻引线的陶瓷封装外壳材料的制备方法,包括以下步骤:
A、将各种原料混合均匀;
B、成型;
C、将成型后在氮气与氢气的比例为1:3气氛中进行烧结,烧结温度为 800℃,所述氮气与氢气的比例为体积比。
抗弯强度>300MPa
介电常数 8.5(1MHz)、7.7(10GHz)
介质损耗 2.3×10-5(1MHz)、8.1×10-5(10GHz)
成瓷颜色:黑灰色
实施例3:
一种适用于低电阻引线的陶瓷封装外壳材料,由以下重量百分比的成分组成:二氧化硅 6%、氟化钙 3%、硼砂 1%、氧化钡 5%、氧化钾 0.5%、着色剂 15%和氧化铝。
所述的着色剂为二氧化钛和氧化铜质量比为5:1的混合物。
所述的氧化铝为α相氧化铝,纯度>99.9%。
所述的二氧化硅的粒径小于100nm、其余原料的粒径小于1μm。
所述的适用于低电阻引线的陶瓷封装外壳材料的制备方法,包括以下步骤:
A、将各种原料混合均匀;
B、成型;
C、将成型后在氮气与氢气的比例为1:(1-3)气氛中进行烧结,烧结温度为 800-1000℃,所述氮气与氢气的比例为体积比。
抗弯强度>300MPa
介电常数 9.0(1MHz)、8.5(10GHz)
介质损耗 6.9×10-6(1MHz)、3.7×10-5(10GHz)
成瓷颜色:浅红色
对比例1
将实施例1中的氟化钙去除,其余配比和制备方法不变。
介质损耗 7.1×10-5(1MHz)、5.5×10-4(10GHz)
对比例2
将实施例1中的硼砂去除,其余配比和制备方法不变。
介质损耗 1.5×10-4(1MHz)、8.6×10-4(10GHz)
由以上实施例和对比例的测试数据可以知道,本发明的适用于低电阻引线的陶瓷封装外壳材料具有非常低的介质损耗。
以上所述,仅为本发明较佳的具体实施方式,但本发明的保护范围并不局限于此,任何熟悉本技术领域的技术人员在本发明揭露的技术范围内,根据本发明的技术方案及其发明构思加以等同替换或改变,都应涵盖在本发明的保护范围之内。
Claims (6)
1.一种适用于低电阻引线的陶瓷封装外壳材料,其特征在于,二氧化硅、氟化钙、硼砂、氧化钡、氧化钾、着色剂和氧化铝。
2.如权利要求1所述的适用于低电阻引线的陶瓷封装外壳材料,其特征在于,由以下重量百分比的成分组成:二氧化硅 6-12%、氟化钙 1-3%、硼砂 1-2%、氧化钡 2-5%、氧化钾0.5-1%、着色剂 6-15%和氧化铝。
3.如权利要求1或2所述的适用于低电阻引线的陶瓷封装外壳材料,其特征在于,所述的着色剂为二氧化钛、氧化铜、三氧化二铬、氧化亚钴中的一种或者多种的组合。
4.如权利要求1或2所述的适用于低电阻引线的陶瓷封装外壳材料,其特征在于,所述的氧化铝为α相氧化铝,纯度>99.9%。
5.如权利要求1或2所述的适用于低电阻引线的陶瓷封装外壳材料,其特征在于,所述的二氧化硅的粒径小于100nm、其余原料的粒径小于1μm。
6.如权利要求1或2所述的适用于低电阻引线的陶瓷封装外壳材料,其特征在于,所述的适用于低电阻引线的陶瓷封装外壳材料的制备方法,包括以下步骤:
A、将各种原料混合均匀;
B、成型;
C、将成型后在氮气与氢气的比例为1:(1-3)气氛中进行烧结,烧结温度为 800-1000℃,所述氮气与氢气的比例为体积比。
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