CN110416393A - 电子装置 - Google Patents
电子装置 Download PDFInfo
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- CN110416393A CN110416393A CN201811197891.9A CN201811197891A CN110416393A CN 110416393 A CN110416393 A CN 110416393A CN 201811197891 A CN201811197891 A CN 201811197891A CN 110416393 A CN110416393 A CN 110416393A
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- 239000004065 semiconductor Substances 0.000 description 6
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
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- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 208000027418 Wounds and injury Diseases 0.000 description 1
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- 229910052738 indium Inorganic materials 0.000 description 1
- GRPQBOKWXNIQMF-UHFFFAOYSA-N indium(3+) oxygen(2-) tin(4+) Chemical compound [Sn+4].[O-2].[In+3] GRPQBOKWXNIQMF-UHFFFAOYSA-N 0.000 description 1
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- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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Abstract
本发明提供了一种电子装置,其包括基板、第一电路、多个接合垫以及发光单元。第一电路设置于基板上。接合垫设置在基板上,其中接合垫的至少其中一个包括接合部以及连接部,接合部通过连接部电连接至第一电路。发光单元设置在基板上并对应接合垫的接合部,且发光单元通过接合垫的至少其中一个电连接第一电路。第一电路的至少一部分在俯视方向上位于接合垫的其中两个之间。
Description
技术领域
本发明涉及一种电子装置,特别是涉及一种可减少电路被元件压伤的电子装置。
背景技术
随着电子装置的演进与发展,电子装置在现今社会中已成为不可或缺的物品。一般而言,电子装置可具有发光元件,例如发光二极管(light-emitting diode,LED),然而在接合发光元件的过程中,可能会进行将发光元件设置于基板上的动作及/或进行加热。此些步骤会使发光元件下方的电路受损,例如伤害晶体管、电容等元件,进而造成电子装置的合格率下降,因此需对此部分进行改良。
发明内容
在一实施例中,本发明提供了一种电子装置,其包括基板、第一电路、多个接合垫以及发光单元。基板包含了第一电路。接合垫设置在基板上,其中接合垫的至少其中一个包括接合部以及连接部,接合部通过连接部电连接至第一电路。发光单元设置在基板上并对应接合垫的接合部,且发光单元通过接合垫的至少其中一个电连接第一电路。第一电路的至少一部分在俯视方向上位于接合垫的其中两个之间。
附图说明
图1所示为本发明第一实施例的电子装置的俯视示意图。
图2所示为本发明第一实施例的电子装置的剖视示意图。
图3所示为本发明第一实施例的发光单元与第一电路的电路图。
图4所示为本发明第二实施例的电子装置的剖视示意图。
图5所示为本发明第三实施例的电子装置的俯视示意图。
图6所示为本发明第四实施例的电子装置的俯视示意图。
图7所示为本发明第四实施例的电子装置的剖视示意图。
图8所示为本发明第五实施例的电子装置的俯视示意图。
图9所示为本发明一实施例的电子装置的俯视示意图。
图10所示为本发明第六实施例的电子装置的俯视示意图。
图11所示为本发明第七实施例的电子装置的剖视示意图。
图12所示为本发明第八实施例的电子装置的剖视示意图。
附图标记说明:100、200、300、400、500、600发光结构;110-基板;120-半导体层;130-第一绝缘层;140-第一导电层;150-第二绝缘层;160-第二导电层;170-第三绝缘层;180-第三导电层;BP-接合垫;BP1-第一接合垫;BP2-第二接合垫;BP3-第三接合垫;BP4-第四接合垫;BR-接合部;BT1-第一桥接线;BT2-第二桥接线;BT3-第三桥接线;CLR-通道区;COL-绝缘覆盖层;CP-凸块;Cst-电容;CTE-接触端;CTR-连接部;D、Dd、Ds-汲极电极;DC1-第一电路;DC2-第二电路;DC3-第三电路;DL-资料线;DO-俯视方向;DP-面板;DT-驱动晶体管;ED-电子装置;G、Gd、Gs-闸极电极;LE-发光单元;OSB-拼接基板;PL-电源线;S、Sd、Ss-源极电极;SC、SCd、SCs-通道层;SR-安全区;ST-开关晶体管;SU-开关元件;VDD、VEE-电源。
具体实施方式
通过参考以下的详细描述并同时结合附图可以理解本发明,须注意的是,为了使读者能容易了解及图式的简洁,本发明中的多张图式只绘出显示器的一部分,且图式中的特定元件并非依照实际比例绘图。此外,图中各元件的数量及尺寸仅作为示意,并非用来限制本发明的范围。
本发明通篇说明书与后附的权利要求中会使用某些词汇来指称特定元件。本领域技术人员应理解,电子设备制造商可能会以不同的名称来指称相同的元件。本文并不意在区分那些功能相同但名称不同的元件。在下文说明书与权利要求书中,「含有」与「包括」等词为开放式词语,因此其应被解释为「含有但不限定为…」之意。
当相应的构件例如膜层或区域被称为「在另一个构件(或其变体)上」、「连接到另一构件」或「延伸到另一个构件」时,它可以直接在另一个构件上、直接连接到另一个构件或直接延伸到另一个构件,或者两者之间可存在有其他构件。另一方面,当构件被称为「直接在另一个构件(或其变体)上」或「直接延伸到另一个构件」时,则两者之间不存在任何构件。另外,当构件被称为「耦接于另一个构件(或其变体)」时,它可以直接地连接到此另一构件,通过一或多个构件间接地连接(例如电性接)到此另一构件。
当本发明的描述中使用术语「包括」、「包含」及/或「具有」时,其指定了相应的特征、区域、步骤、操作及/或构件的存在,但不排除一个或多个相应的特征、区域、步骤、操作及/或构件的存在。当本发明的描述中使用「约」、「大约」、「大抵」的用语,通常表示在一给定值或范围的20%之内,或10%之内,或5%之内,或3%之内,或2%之内,或1%之内,或0.5%之内。在此给定的数量为大约的数量,亦即在没有特定说明「约」、「大约」、「大抵」的情况下,仍可隐含「约」、「大约」、「大抵」的含义。
须知悉的是,以下所举实施例可以在不脱离本发明的精神下,将数个不同实施例中的特征进行替换、重组、混合以完成其他实施例。
下文将对电子装置进行说明,在本发明中,电子装置可为任何适合类型的电子装置。举例而言,电子装置可为发光结构、背光模块、显示器、拼接型电子装置、感测装置或天线,但不以此为限。
请参考图1到图3,图1所示为本发明第一实施例的电子装置的俯视示意图,图2所示为本发明第一实施例的电子装置的剖视示意图,图3所示为本发明第一实施例的发光单元与第一电路的电路图。本实施例的电子装置为发光结构100。举例来说,发光结构100可为产生影像的显示器或产生光线的发光模块,但本发明不以此为限。发光结构100可包括至少一结构单元,用以产生光线。本实施例的发光结构100可为显示器,并包括多个结构单元,而为了清楚显示结构单元,图1到图3仅绘示单一结构单元,且图1省略了发光单元,但本发明不以此为限。如图1到图3所示,本实施例的发光结构100的结构单元包括基板110、多个接合垫BP以及发光单元LE,接合垫BP与发光单元LE设置在基板110上。发光单元LE可为例如发光二极管(light-emitting diode,LED)、微型发光二极管(micro-light-emitting diode,micro-LED)、次毫米发光二极管(mini-light-emitting diode,mini-LED)、有机发光二极管(organic light-emitting diode,OLED)、量子点有机发光二极管(quantum-dot light-emitting diode,QLED)、其他适合的发光元件或前述的组合,而且发光单元LE可发射单色光(例如红光、绿光或蓝光)或混合光(例如白光)。举例而言,本实施例的发光单元LE内可包括例如蓝光发光二极管芯片(未绘出)、绿光发光二极管芯片(未绘出)与红光发光二极管芯片(未绘出),以混合出白光。并且,发光单元LE举例可具有四个凸块(bump)CP与基板电连接,使得电信号可进入发光单元LE,其中三个凸块CP分别电连接蓝光发光二极管芯片的阳极、绿光发光二极管芯片的阳极与红光发光二极管芯片的阳极,另一个凸块CP可作为共阴极,电连接此三个发光二极管芯片的阴极,但不以此为限。
发光结构100的结构单元可包括设置在基板110上的各式膜层(例如绝缘层、导电层及/或半导体层)、导线与电子元件(主动元件或被动元件,例如晶体管、电容、电阻等),基板110的材料可包括玻璃、石英、蓝宝石、聚亚酰胺(polyimide,PI)、聚对苯二甲酸乙二酯(polyethylene terephthalate,PET)及/或其他适合的材料,以作为可挠或硬质的基板110,但不以此为限。在本实施例中,基板110上可设置有半导体层120、第一绝缘层130、第一导电层140、第二绝缘层150、第二导电层160、第三绝缘层170与第三导电层180,并由下而上依序设置,但发光结构100所包括的膜层与膜层之间的设置关系不以此为限。在另一实施例中,还可额外设置有其他绝缘层、导电层及/或半导体层,且各膜层的设置顺序可依设计而改变。所设置的绝缘层(例如第一绝缘层130、第二绝缘层150与第三绝缘层170)举例可包括氧化硅、氮化硅、氮氧化硅、其他适合的绝缘材料或其组合,所设置的导电层(例如第一导电层140、第二导电层160与第三导电层180)举例可包括金属材料、透明导电材料(例如氧化铟锡(ITO)、氧化铟锌(IZO)等)、其他适合的导电材料或其组合。可通过上述膜层形成第一电路DC1,以驱动发光单元LE使其产生所需光强度的光线。本实施例的第一电路DC1可包括两个开关元件SU(驱动晶体管DT与开关晶体管ST)以及电容Cst。举例来说,驱动晶体管DT的汲极电极Dd、开关晶体管ST的源极电极Ss与汲极电极Ds以及电容Cst的一电极由第二导电层160所形成,驱动晶体管DT的闸极电极Gd与源极电极Sd、开关晶体管ST的闸极电极Gs以及电容Cst的另一电极由第一导电层140所形成,驱动晶体管DT的通道层SCd与开关晶体管ST的通道层SCs由半导体层120所形成,而通道层SCd、SCs具有与闸极电极Gd、Gs对应的通道区CLR,开关晶体管ST的源极电极Ss与汲极电极Ds的其中一者(图2中为汲极电极Ds)电连接驱动晶体管DT的闸极电极Gd与电容Cst,开关晶体管ST的源极电极Ss与汲极电极Ds的其中另一者(图2中为源极电极Ss)可为亮度信号输入端(例如通过电连接亮度控制芯片接收亮度信号),开关晶体管ST的闸极电极Gs可为控制信号输入端(例如通过电连接闸极开关控制芯片接收闸极控制信号),驱动晶体管DT的源极电极Sd与汲极电极Dd的其中一者(图2中为源极电极Sd)电连接电源VDD与电容Cst,驱动晶体管DT的源极电极Sd与汲极电极Dd的其中另一者(图2中为汲极电极Dd)电连接发光单元LE,但设置方式与连接方式都不以此为限。在其他实施例中,第一电路DC1还可包括其他开关元件SU、电容或是适合的电子元件,并可使第一电路DC1额外具有其他功能,例如补偿功能。在本实施例中,也可选择性地通过上述膜层形成用以驱动发光单元LE的第二电路DC2与第三电路DC3,第二电路DC2与第三电路DC3电连接发光单元LE,而第二电路DC2与第三电路DC3的电路设计可相同或不同于第一电路DC1。举例而言,本实施例的第一电路DC1可电连接发光单元LE中的蓝光发光二极管芯片的阳极(未绘出),第二电路DC2可电连接发光单元LE中的绿光发光二极管芯片的阳极(未绘出),第三电路DC3可电连接发光单元LE中的红光发光二极管芯片的阳极(未绘出),但不以此为限。此外,在本实施例中,第一电路DC1、第二电路DC2与第三电路DC3可为电子装置(例如显示器)的主动阵列(active matrix)电路中用以驱动发光单元LE的驱动电路,但不以此为限。须说明的是,图1省略了第一电路DC1、第二电路DC2与第三电路DC3内部的电子元件与走线的配置,以凸显第一电路DC1、第二电路DC2与第三电路DC3的设置范围。在本发明的一些实施例中,第一电路DC1、第二电路DC2与第三电路DC3的至少其中一者的设置范围包含了该电路中的电子元件(如晶体管、电阻、电容等)所在位置,以及电路内各电子元件之间电连接的线路所在位置,但不以此为限。
此外,在本实施例中,还可利用上述膜层形成多条连接线,例如数据线(dataline)DL、扫描线(scan line)与电源线(power line)PL,其中亮度控制芯片可通过数据线DL分别电连接至第一电路DC1、第二电路DC2、第三电路DC3(例如开关晶体管ST的源极电极Ss),闸极开关控制芯片可通过扫描线电连接至第一电路DC1、第二电路DC2、第三电路DC3(例如开关晶体管ST的闸极电极Gs),电源VDD可通过电源线PL电连接至发光单元LE(例如可通过多条电源线PL分别电连接发光单元LE中的蓝光发光二极管芯片、绿光发光二极管芯片与红光发光二极管芯片),以对发光单元LE提供电压或电流。举例来说,数据线DL与电源线PL可由第二导电层160所形成,扫描线可由第一导电层140所形成,但不以此为限。
接合垫BP用以使基板110上的电路与发光单元LE电连接,而接合垫BP举例可由第三导电层180所形成。在本发明中,接合垫BP的至少其中一个包括彼此电连接的接合部BR与连接部CTR,其中接合部BR与发光单元LE对应,并用以接合发光单元LE的凸块CP以电连接发光单元LE,连接部CTR用以电连接发光单元LE的驱动电路,而本实施例的所有接合垫BP都分别包括接合部BR与连接部CTR,但不以此为限。详细而言,本实施例的接合垫BP可包含第一接合垫BP1、第二接合垫BP2、第三接合垫BP3与第四接合垫BP4,第一接合垫BP1的接合部BR通过凸块CP与蓝光发光二极管芯片的阳极电连接,使得蓝光发光二极管芯片通过第一接合垫BP1与第一电路DC1电连接,第二接合垫BP2的接合部BR通过凸块CP与绿光发光二极管芯片的阳极电连接,使得绿光发光二极管芯片通过第二接合垫BP2与第二电路DC2电连接,第三接合垫BP3的接合部BR通过凸块CP与红光发光二极管芯片的阳极电连接,使得红光发光二极管芯片通过第三接合垫BP3与第三电路DC3电连接,第四接合垫BP4的接合部BR通过凸块CP与至少一发光二极管芯片的阴极电连接,使得可通过第四接合垫BP4对发光单元LE内至少一发光二极管芯片的阴极提供电压,例如电源VEE通过第四接合垫BP4与发光单元LE电连接,以提供接地电压,但接合垫BP的连接方式不以此为限。此外,在俯视方向DO上,接合部BR可设置于连接部CTR的不同侧,例如在图1所示的实施例中,接合垫BP的接合部BR在俯视方向DO上是位于连接部CTR的下侧,而在本发明的一些实施例中,至少一接合部BR的区域可为一接合垫BP与对应凸块CP在俯视方向上的重迭区域,更具体的说,此重迭区域在接合垫BP上且平行于数据线DL延伸方向有一第一长度,而此重迭区域在接合垫BP上且垂直于数据线DL延伸方向有一第二长度,第一长度与第二长度所围成的区域被视为接合部BR的区域,但不以此为限。另外,可选择性的在第三导电层180与发光单元LE之间形成绝缘覆盖层COL,用以保护基板110上的膜层,而本实施例的绝缘覆盖层COL可覆盖接合垫BP的连接部CTR并暴露出接合垫BP的接合部BR。需要注意的是,本实施例中的阳极和阴极设置位置和类型仅为举例,在其他实施例中,可视发光二极管的类型而更动。
一般而言,可藉由例如接合制程将发光单元LE的凸块CP设置在接合垫BP上,使接合垫BP与发光单元LE的凸块CP电连接,但在将发光单元LE的凸块CP接合于接合垫BP时,可能会对凸块CP进行加热或加压,因此,若接合垫BP的接合部BR下方有电路结构,例如开关元件SU、电容Cst等,上述的设置过程会对此些结构造成伤害,进而使电路受损。为了减少上述状况,本发明第一电路DC1的至少一部分在俯视方向DO上位于接合垫BP的其中两个之间,第二电路DC2的至少一部分在俯视方向DO上位于接合垫BP的其中两个之间,第三电路DC3的至少一部分在俯视方向DO上位于接合垫BP的其中两个之间。在本实施例中,第一电路DC1、第二电路DC2与第三电路DC3是位于两个接合垫BP之间。举例而言,在图1中,第一电路DC1位于第一接合垫BP1与第四接合垫BP4之间(也可视为位于第一接合垫BP1与第二接合垫BP2之间或是位于第一接合垫BP1与第三接合垫BP3之间),第二电路DC2位于第三接合垫BP3与第四接合垫BP4之间(也可视为位于第一接合垫BP1与第四接合垫BP4之间或是位于第二接合垫BP2与第四接合垫BP4之间),第三电路DC3位于第三接合垫BP3与第四接合垫BP4之间,但不以此为限。换句话说,第一电路DC1、第二电路DC2与第三电路DC3在俯视方向DO上可与接合垫BP的接合部BR不重迭,因此在电路中的开关元件SU(即本实施例的驱动晶体管DT与开关晶体管ST)、电容Cst等电子元件在俯视方向DO上与接合部BR不重迭。在此设计下,在将发光单元LE设置在接合垫BP上时,减少了第一电路DC1、第二电路DC2与第三电路DC3等驱动电路因为此设置过程而受到破坏的机率,进而提升发光结构100的合格率。在本实施例中,第一电路DC1、第二电路DC2与第三电路DC3是位于与同一个发光单元LE接合的其中两个接合垫BP之间,因此在完成发光单元LE的接合后,发光单元LE在俯视方向DO上可与第一电路DC1、第二电路DC2与第三电路DC3至少部分重迭,如图2所示。通过此配置,发光结构100在俯视方向DO上不需额外配置用于设置第一电路DC1、第二电路DC2与第三电路DC3的区域,因此可缩减结构单元的面积。当发光单元LE作为显示器的显示单元时,此配置还可降低相邻发光单元LE之间的间距。
另外,为了使第一电路DC1、第二电路DC2与第三电路DC3位于接合垫BP之间并可电连接于对应的接合垫BP,第一电路DC1可通过第一桥接线BT1电连接到第一接合垫BP1的连接部CTR,第二电路DC2可通过第二桥接线BT2电连接到第二接合垫BP2的连接部CTR,第三电路DC3可通过第三桥接线BT3电连接到第三接合垫BP3的连接部CTR,其中第一桥接线BT1、第二桥接线BT2与第三桥接线BT3可依据需求而跨过其他电路或连接线。第一桥接线BT1、第二桥接线BT2以及第三桥接线BT3可与接合垫BP由相同或不同膜层所形成。在本实施例中,第一桥接线BT1、第二桥接线BT2与第三桥接线BT3可由至少一个导电层所形成(也就是与接合垫BP由不同膜层所形成),而此些桥接线在俯视方向DO上与连接部CTR重迭,并可通过穿孔结构与连接部CTR电连接。举例来说,第一桥接线BT1与第三桥接线BT3可由第二导电层160所形成,第二桥接线BT2可由第一导电层140中的走线、第二导电层160中的走线与其之间的导电结构所连接形成,藉此跨过数据线DL、扫描线与电源线PL等连接线,但不以此为限。
本发明的发光结构与电子装置不以上述实施例为限,下文将继续揭示其它实施例,然为了简化说明并突显各实施例与上述实施例之间的差异,下文中使用相同标号标注相同元件,并不再对重复部分作赘述。
请参考图4,图4所示为本发明第二实施例的电子装置的剖视示意图。如图4所示,本实施例与第一实施例的差异在于本实施例的发光结构200的第一桥接线BT1、第二桥接线BT2以及第三桥接线BT3可与接合垫BP由相同导电层所形成,例如由第三导电层180所形成。须说明的是,由于第一桥接线BT1是电连接于第一接合垫BP1的连接部CTR与第一电路DC1之间,因此可将第一接合垫BP1与第一桥接线BT1的连接处视为第一接合垫BP1的连接部CTR。同理,可将第二接合垫BP2与第二桥接线BT2的连接处视为第二接合垫BP2的连接部CTR,可将第三接合垫BP3与第三桥接线BT3的连接处视为第三接合垫BP3的连接部CTR。
请参考图5,图5所示为本发明第三实施例的电子装置的俯视示意图,其中图5省略了第一电路DC1、第二电路DC2与第三电路DC3内部的电子元件与走线的配置,以凸显第一电路DC1、第二电路DC2与第三电路DC3的设置范围。如图5所示,本实施例与第一实施例的差异在于本实施例的发光结构300的各接合垫BP中的接合部BR与连接部CTR的相对位置可彼此不相同,其中第四接合垫BP4的连接部CTR在俯视方向DO上位于接合部BR与数据线DL之间,而第一接合垫BP1的连接部CTR介于接合部BR与沿数据线DL方向的相邻另一发光单元的第二接合垫(未绘出)之间、第二接合垫BP2的连接部CTR在俯视方向DO上位于接合部BR与第一电路DC1的水平凸出部分之间、第三接合垫BP3的连接部CTR则位于接合部BR与第三电路DC3之间,但不以此为限。此外,在本实施例中,电路的设置位置也可不同于第一实施例。具体地,第一电路DC1除了位于第一接合垫BP1与第二接合垫BP2之间以及第一接合垫BP1与第四接合垫BP4之间外,其一部分也可位于第二接合垫BP2与第三接合垫BP3之间,第二电路DC2除了位于第一接合垫BP1与第四接合垫BP4之间外,其一部分也可位于第二接合垫BP2与第三接合垫BP3之间。第三电路DC3位于第三接合垫BP3与第四接合垫BP4之间。
请参考图6与图7,图6所示为本发明第四实施例的电子装置的俯视示意图,图7所示为本发明第四实施例的电子装置的剖视示意图,其中图6省略了第一电路DC1、第二电路DC2与第三电路DC3内部的电子元件与走线的配置,并省略桥接线,以凸显第一电路DC1、第二电路DC2与第三电路DC3的设置范围,且图7仅绘示第一电路DC1的开关元件SU、接合垫BP的接合部BR以及发光单元LE的一部分。如图6与图7所示,本实施例与第一实施例的差异在于本实施例的发光结构400的电路的一部分在俯视方向DO上与接合垫BP的接合部BR重迭,举例而言,在图6中,第一电路DC1的一部分可在俯视方向DO上与接合垫BP的接合部BR重迭,另一部分则位于接合垫BP之间,而第二电路DC2与第三电路DC3则位于接合垫BP之间,但不以此为限。在一些实施例中,第一电路DC1、第二电路DC2与第三电路DC3中的至少一者的一部分可在俯视方向DO上与接合垫BP的接合部BR重迭。详细而言,电路中较脆弱的结构或元件或是电路中具有运作功能的结构在俯视方向DO上须与接合垫BP的接合部BR不重迭,以减少在设置发光单元LE的过程中造成毁损的状况。举例来说,在本实施例中,在第一电路DC1中,开关元件SU(例如驱动晶体管DT与开关晶体管ST)在俯视方向DO上不重迭于接合垫BP的接合部BR,其他结构与元件不限制,但不以此为限。须说明的是,本实施例所述的开关元件SU在俯视方向DO上不重迭于接合垫BP的接合部BR,表示开关元件SU中的通道层SC的信道区CLR、源极电极S与通道层SC之间的接触端CTE以及汲极电极D与通道层SC之间的接触端CTE在俯视方向DO上与接合垫BP的接合部BR不重迭。如图7所示,本实施例开关元件SU中的部分半导体层120在俯视方向DO上会与接合垫BP的接合部BR重迭,但不以此为限。在另一实施例中,开关元件SU中的任一导电层也可与接合垫BP的接合部BR重迭。在另一实施例中,开关元件SU的信道区CLR在俯视方向DO上与接合垫BP的接合部BR不重迭,但汲极电极D及/或源极电极S在俯视方向DO上与接合部BR重迭。在另一实施例中,第一电路DC1的开关元件SU与其他被动元件(例如电容Cst)在俯视方向DO上与接合垫BP的接合部BR不重迭,其他结构与元件(例如走线)可与接合部BR重迭。此外,接合部BR重迭于第一电路DC1的重迭面积与接合部BR的面积的比例可大于或等于0且小于或等于0.5(0≤比例≤0.5),或是大于或等于0且小于或等于0.3(0≤比例≤0.3),或是大于或等于0且小于或等于0.1(0≤比例≤0.1),但不以此为限。
另一方面,本实施例与第一实施例的另一差异在于本实施例的发光结构400的接合垫BP的连接部CTR可位于接合部BR的外侧且呈现L状,且连接部CTR在俯视方向DO上位于对应同一个发光单元LE的两接合垫BP的接合部BR之间,但不以此为限。此外,本实施例的第二电路DC2在俯视方向DO上还可横跨连接线(例如数据线DL与电源线PL),但连接部CTR的区域形状不以此为限。
请参考图8,图8所示为本发明第五实施例的电子装置的俯视示意图,其中图8省略了第一电路DC1、第二电路DC2与第三电路DC3内部的电子元件与走线的配置,以凸显第一电路DC1、第二电路DC2与第三电路DC3的设置范围。如图8所示,本实施例与第一实施例的差异在于本实施例的发光结构500的连接线在俯视方向DO上横跨接合垫BP的至少其中一个。举例来说,图8中所绘示的数据线DL与电源线PL横跨两个接合垫BP,但不以此为限。也就是说,在本实施例中,接合垫BP的接合部BR在俯视方向DO上与连接线重迭。
图9所示为本发明一实施例的电子装置的俯视示意图。由上述实施例的发光结构可知,在充分利用发光单元LE下方空间的考虑下,电路中较脆弱的结构或元件须设置在图9所示的安全区SR内,而安全区SR在俯视方向DO上位于接合垫BP之间,藉此使得电路中较脆弱的结构或元件与接合垫BP的接合部BR在俯视方向上不重迭,以减少设置发光单元LE时造成毁损的状况,其中电路中较脆弱的结构或元件举例为开关元件SU或是其信道区CLR。在一些实施例中,其他主动元件或是被动元件也可设置在安全区SR内,例如电容Cst。在一些实施例中,可将驱动发光单元LE的电路中较脆弱的结构或元件,以及电路中的其他部分设置在安全区SR内,例如第一电路DC1、第二电路DC2或第三电路DC3的部分或全部面积。在一些实施例中,可将上述的连接线也设置在安全区SR内,但不以此为限。
请参考图10,图10所示为本发明第六实施例的电子装置的俯视示意图,其中图10仅绘示接合垫BP与位于接合垫BP之间的安全区SR范围,并绘示出设置三个发光单元LE所需的范围的发光结构600。如图10所示,本实施例的各发光单元LE可具有两个凸块CP。结构单元中的接合垫BP可包含多个第一接合垫BP1与多个第二接合垫BP2,而各发光单元LE的两凸块CP分别与发光二极管芯片的阳极与阴极电连接,并分别对应一第一接合垫BP1与一第二接合垫BP2,且在图10中横向设置。本实施例的发光单元LE举例可发射单色光,例如对应图10的上方的第一接合垫BP1与第二接合垫BP2的发光单元LE可发射蓝光,对应图10的中间的第一接合垫BP1与第二接合垫BP2的发光单元LE可发射绿光,对应图10的下方的第一接合垫BP1与第二接合垫BP2的发光单元LE可发射红光,但不以此为限。在本实施例中,第一电路DC1的至少一部分可设置在图10的上方的第一接合垫BP1与第二接合垫BP2之间的安全区SR内,以驱动发光单元LE发射蓝光,第二电路DC2的至少一部分可设置在图10的中间的第一接合垫BP1与第二接合垫BP2之间的安全区SR内,以驱动发光单元LE发射绿光,第三电路DC3的至少一部分可设置在图10的下方的第一接合垫BP1与第二接合垫BP2之间的安全区SR内,以驱动发光单元LE发射红光,而设置在安全区SR内的电路结构或元件可参考上述实施例,在此不重复赘述。
请参考图11,图11所示为本发明第七实施例的电子装置的剖视示意图。如图11所示,电子装置ED可包括一或多个发光结构与拼接基板OSB,其中发光结构可为上述实施例的或其变化型的其中一种,图11以第一实施例的发光结构100为例。在本实施例中,电子装置ED可包括多个发光结构100,而拼接基板OSB可设置邻近于多个发光结构100,以形成拼接型电子装置ED。举例而言,本实施例的电子装置ED可为户外显示器(public informationdisplay),而发光结构100可作为显示器的阵列基板,以发出对应光线来显示画面,但不以此为限。在变化实施例中,电子装置ED也可包括仅一个发光结构100与拼接基板OSB,而拼接基板OSB可设置邻近于此发光结构100。在另一变化实施例中,电子装置ED也可包括仅包括一个发光结构100而不包含拼接基板OSB,并直接对此发光结构100进行封装以形成电子装置ED。
请参考图12,图12所示为本发明第八实施例的电子装置的剖视示意图。如图12所示,电子装置ED可包括一或多个发光结构100与非自发光的面板DP,其中发光结构可为上述实施例的或其变化型的其中一种,图12以第一实施例的发光结构100为例。在本实施例中,电子装置ED可包括一个发光结构100,而面板DP设置在发光结构100上,以形成电子装置ED。举例来说,电子装置ED可为显示器,其中发光结构100可作为显示器的背光模块,使得显示器可通过调整面板DP的透光度以及发光结构100所发出的背光以显示画面,但不以此为限。非自发光的面板DP可例如为液晶面板,但不以此为限。在变化实施例中,电子装置ED也可包括多个发光结构100与面板DP,而面板DP可设置在多个发光结构100上。在另一变化实施例中,电子装置ED也可由多个面板DP拼接,其中面板DP可设置在一个或多个发光结构100上。在本发明的一些实施例中,多个面板PD的拼接方式可用于曲面拼接、可挠式拼接、异型拼接等等,但不限于此。
综上所述,由于本发明的驱动电路中较脆弱的结构或元件在俯视方向上位于接合垫之间,因此,在设置发光单元的过程中,可减少因为加热或加压而使此些结构或元件受到毁损的机率,因此可提升电路的可靠度与电子装置的合格率。
以上所述仅为本发明的实施例而已,并不用于限制本发明,对于本领域的技术人员来说,本发明可以有各种更改和变化。凡在本发明的精神和原则之内,所作的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。
Claims (10)
1.一种电子装置,其特征在于,包括:
一基板;
一第一电路,设置于所述基板上;
多个接合垫,设置在所述基板上,其中所述多个接合垫的至少其中一个包括一接合部以及一连接部,所述接合部通过所述连接部电连接至所述第一电路;以及
一发光单元,设置在所述基板上并对应所述接合垫的所述接合部,且所述发光单元通过所述接合垫的至少其中一个电连接所述第一电路;
其中所述第一电路的至少一部分在俯视方向上位于所述接合垫的其中两个之间。
2.如权利要求1所述的电子装置,其特征在于,所述第一电路在俯视方向上与所述接合部不重迭。
3.如权利要求1所述的电子装置,其特征在于,所述第一电路包括一开关元件,所述开关元件在俯视方向上与所述接合部不重迭。
4.如权利要求1所述的电子装置,其特征在于,所述第一电路包括一开关元件,所述开关元件包括一闸极电极以及一通道层,所述通道层具有对应于所述闸极电极的一通道区,且所述通道区在俯视方向上与所述接合部不重迭。
5.如权利要求1所述的电子装置,其特征在于,所述第一电路包括一开关元件与一电容,所述电容电连接于所述开关元件。
6.如权利要求1所述的电子装置,其特征在于,还包括一第二电路,所述第二电路的至少一部分在俯视方向上位于所述多个接合垫的其中两个之间,且所述发光单元通过所述接合垫的至少其中一个电连接所述第二电路。
7.如权利要求5所述的电子装置,其特征在于,所述电容在俯视方向上与所述接合部不重迭。
8.如权利要求1所述的电子装置,其特征在于,还包括一连接线,所述第一电路通过所述连接线电连接于一电源或一芯片,且所述连接线在俯视方向上和所述接合垫的至少其中一个部分重迭。
9.如权利要求1所述的电子装置,其特征在于,所述接合部和所述第一电路的重迭面积与所述接合部的面积的比例大于或等于0且小于或等于0.5。
10.如权利要求1所述的电子装置,其特征在于,所述发光单元在俯视方向上与所述第一电路重迭。
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US20210408350A1 (en) | 2021-12-30 |
CN110416393B (zh) | 2021-10-08 |
EP3561871B1 (en) | 2022-05-11 |
EP3561871A1 (en) | 2019-10-30 |
KR20190125187A (ko) | 2019-11-06 |
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