CN110416354A - A kind of two-in-one method of tubular film plating machine - Google Patents
A kind of two-in-one method of tubular film plating machine Download PDFInfo
- Publication number
- CN110416354A CN110416354A CN201910578233.2A CN201910578233A CN110416354A CN 110416354 A CN110416354 A CN 110416354A CN 201910578233 A CN201910578233 A CN 201910578233A CN 110416354 A CN110416354 A CN 110416354A
- Authority
- CN
- China
- Prior art keywords
- notacoria
- silicon wafer
- positive
- area
- blanking
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 67
- 238000007747 plating Methods 0.000 title claims abstract description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 41
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 41
- 239000010703 silicon Substances 0.000 claims abstract description 41
- 230000008569 process Effects 0.000 claims abstract description 35
- 239000012528 membrane Substances 0.000 claims abstract description 16
- 238000007599 discharging Methods 0.000 claims abstract description 4
- 230000007306 turnover Effects 0.000 claims abstract 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 16
- 229910002804 graphite Inorganic materials 0.000 claims description 16
- 239000010439 graphite Substances 0.000 claims description 16
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- 238000012805 post-processing Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 description 7
- 230000005540 biological transmission Effects 0.000 description 6
- 230000008901 benefit Effects 0.000 description 3
- 230000008021 deposition Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 235000008216 herbs Nutrition 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The present invention provides a kind of two-in-one method of tubular film plating machine, notacoria, positive film are used a filming equipment by the two-in-one method, notacoria, positive membrane process merge, using manipulator by silicon wafer turnover, first process notacoria, it is processed to notacoria and is overturn the positive film of post-processing, reduce product carrying and operation of feeding and discharging process between process.
Description
Technical field
The present invention relates to silicon solar cell apparatus fields, and in particular to arrives the two-in-one side of tubular film plating (positive notacoria) machine
Method.
Background technique
With flourishing for solar energy industry, industry automatization level is gradually increased, and entire Automation of Manufacturing Process takes
For manual operation, board output capacity and board utilization rate become the key that factory's drop originally proposes effect.
Automated production runs through entire battery production process, from the positive film-of making herbs into wool-diffusion-etching-oxidation-PERC- notacoria-
Printing-sintering-testing, sorting, the operational motion of people gradually decreases in production process, and personnel gradually liberate from numerous operations,
Production process is just towards simple, efficient, security developments.
But also relatively rough for the automated procedures of plated film section process, silicon wafer first processes notacoria, and after processing, Xu is transported
It is further continued for processing positive film on to another equipment, program is complicated, and safety is poor.
Summary of the invention
In view of the above technical problems, the present invention is directed to propose a kind of two-in-one method of tubular film plating machine, emphasis is to plated film section
Process optimization provides scheme, improves production efficiency and cell piece yield efficiency.
The present invention proposes a kind of two-in-one method of tubular film plating machine, method includes the following steps:
The gaily decorated basket for being placed with silicon wafer is placed in automation feeding area by step 1；
Silicon wafer is transmitted in the pulldown region of manipulator by step 2 with belt；
Manipulator pulldown area's silicon wafer is inserted into graphite boat by step 3；
Step 4 sticks with the graphite boat inlet pipe of silicon wafer, carries out back side silicon nitride siliceous deposits；
Silicon wafer is sent to inserted sheet area after the completion of notacoria technique by step 5, by silicon chip extracting, is placed in blanking rest area；
Step 6, manipulator overturn 180 °, and blanking rest area silicon chip extracting is inserted into graphite boat；
Step 7 is front plated film, sticks with the graphite boat inlet pipe of silicon wafer, runs positive membrane process, carries out front side silicon nitride siliceous deposits；
Step 8, after the completion of positive membrane process, graphite boat is sent to inserted sheet area, by silicon chip extracting, is placed in blanking rest area；
The silicon wafer that notacoria, positive membrane process are completed is sent to the gaily decorated basket by step 9；
Step 10, the gaily decorated basket stick with rear automatic blanking, and positive notacoria technique is completed at this time, can flow into next procedure process.
Compared with prior art, the invention has the following advantages:
This patent notacoria, positive film use a filming equipment, and traditional notacoria, positive membrane process are merged, reduce by 1 procedure, reduces 1
Platform filming equipment is reduced manual handling number 2 times, is reduced belt transmission times 2 times, reduces transit wagon dosage and 1 time across process
Handling process, the effective contact for reducing silicon wafer with equipment reduce product carrying and operation of feeding and discharging process between process；
Notacoria, positive film substep are two-in-one in this patent, and more separately two procedures have following advantage:
1, blanking, transmission, handling time optimize 3min, and production capacity promotes 5%；
2, silicon wafer contact is less, scratches badness optimization 0.3%, efficiency improves 0.05%；
3, manual work rate 50% is reduced；
4, board utilization rate increases by 5%.
Detailed description of the invention
Fig. 1 is the implementation flow chart of current plated film section flow chart in the prior art；
Fig. 2 is a kind of implementation flow chart of the two-in-one method of tubular film plating machine of the present invention.
Specific embodiment
Now technical solution of the present invention is completely described in conjunction with attached drawing.It is described below only of the invention one
Part case study on implementation, and it is not all.Based on the case study on implementation in the present invention, those skilled in the art are not making creation
Property labour under the premise of every other case study on implementation obtained, belong within the scope of the present invention.
Embodiment 1
As shown in Figure 1, embodiments thereof are as follows for the implementation flow chart of current plated film section flow chart in the prior art:
1, notacoria gaily decorated basket feeding: preceding working procedure is flowed into the artificial place apparatus 1 of piece and automates feeding area；
2, notacoria belt transmits: the area inserted sheet Zan Fang will be sent to notacoria piece by belt.
3, notacoria inserted sheet: the area Zan Fang silicon wafer is inserted into graphite boat；
4, notacoria technique: notacoria nitride deposition is carried out using equipment 1；
5, blanking takes piece: silicon wafer after the completion of notacoria technique being taken out by mechanical arm, is placed in the area blanking Zan Fang.
6, notacoria belt transmits: plated film completion silicon wafer in the area Zan Fang being sent in the blanking gaily decorated basket by belt.
7, notacoria gaily decorated basket blanking: the gaily decorated basket is carried in tote cart manually；
8, be carried to positive film: silicon wafer in tote cart is carried to positive film feeding region by employee；
9, positive film gaily decorated basket feeding: the positive film of silicon wafer place apparatus 2 after notacoria is automated feeding area by personnel；
10, silicon wafer in the gaily decorated basket positive hymeniderm band transmission: is sent to the area inserted sheet Zan Fang；
11, positive film inserted sheet: will be inserted into graphite boat to positive membrane process silicon wafer,
12, positive membrane process: front side silicon nitride siliceous deposits is carried out using equipment 2；
13, it takes piece: silicon wafer after positive membrane process is taken out out of graphite boat, placed and the area blanking Zan Fang by manipulator；
14, positive hymeniderm band transmission: silicon wafer after positive film is sent in the gaily decorated basket by belt；
15, the gaily decorated basket filled manually positive film gaily decorated basket blanking: is removed into automation.
As shown in Fig. 2, this method includes following for a kind of implementation flow chart of the two-in-one method of tubular film plating machine of the present invention
Step:
1, notacoria gaily decorated basket feeding: preceding working procedure is flowed into the artificial place apparatus 1 of piece and automates feeding area；
2, notacoria belt transmits: the area inserted sheet Zan Fang will be sent to notacoria piece by belt.
3, notacoria inserted sheet: the area Zan Fang silicon wafer is inserted into graphite boat；
4, notacoria technique: notacoria nitride deposition is carried out using equipment 1；
5, blanking takes piece: silicon wafer after the completion of notacoria technique being taken out by mechanical arm, is placed in the area blanking Zan Fang；
6, positive film inserted sheet: manipulator rotates 180 degree, and suction piece will be inserted into graphite boat to positive membrane process silicon wafer；
7, positive membrane process: front side silicon nitride siliceous deposits is carried out using equipment 1；
8, it takes piece: silicon wafer after positive membrane process is taken out out of graphite boat, placed and the area blanking Zan Fang by manipulator；
9, positive hymeniderm band transmission: silicon wafer after positive film is sent in the gaily decorated basket by belt；
10, the gaily decorated basket filled manually positive film gaily decorated basket blanking: is removed into automation equipment.
This patent notacoria, positive film use a filming equipment, and traditional notacoria, positive membrane process are merged, reduce by 1 procedure,
Reduce by 1 filming equipment, reduce manual handling number 2 times, reduce belt transmission times 2 times, reduce transit wagon dosage and 1 time across
Process handling process, the effective contact for reducing silicon wafer with equipment reduce product carrying and operation of feeding and discharging process between process.
Above embodiments are used for illustrative purposes only, rather than limitation of the present invention, the technology people in relation to technical field
Member, without departing from the spirit and scope of the present invention, made various transformation or modification belong to model of the invention
Farmland.
The basic principles, main features and advantages of the present invention have been shown and described above.The technology of the industry
Personnel are it should be appreciated that the present invention is not limited to the above embodiments, and the above embodiments and description only describe this
The principle of invention is not departing from the front lower of spirit and scope of the invention, and various changes and improvements may be made to the invention, and the present invention wants
Protection scope is asked to be delineated by the appended claims, the specification and equivalents thereof from the appended claims.
Claims (2)
1. a kind of two-in-one method of tubular film plating machine, which is characterized in that notacoria, positive film are used a plating by the two-in-one method
Film device, notacoria, positive membrane process merge, using manipulator by silicon wafer turnover, first process notacoria, process after overturning after notacoria
Positive film is processed, product carrying and operation of feeding and discharging process between process are reduced.
2. a kind of two-in-one method of tubular film plating machine according to claim 1, which is characterized in that the method includes following
Step:
The gaily decorated basket for being placed with silicon wafer is placed in automation feeding area by step 1；
Silicon wafer is transmitted in the pulldown region of manipulator by step 2 with belt；
Manipulator pulldown area's silicon wafer is inserted into graphite boat by step 3；
Step 4 sticks with the graphite boat inlet pipe of silicon wafer, carries out back side silicon nitride siliceous deposits；
Silicon wafer is sent to inserted sheet area after the completion of notacoria technique by step 5, by silicon chip extracting, is placed in blanking rest area；
Step 6, manipulator overturn 180 °, and blanking rest area silicon chip extracting is inserted into graphite boat；
Step 7 is front plated film, sticks with the graphite boat inlet pipe of silicon wafer, runs positive membrane process, carries out front side silicon nitride siliceous deposits；
Step 8, after the completion of positive membrane process, graphite boat is sent to inserted sheet area, by silicon chip extracting, is placed in blanking rest area；
The silicon wafer that notacoria, positive membrane process are completed is sent to the gaily decorated basket by step 9；
Step 10, the gaily decorated basket stick with rear automatic blanking, and positive notacoria technique is completed at this time, flow into next procedure process.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910578233.2A CN110416354A (en) | 2019-06-28 | 2019-06-28 | A kind of two-in-one method of tubular film plating machine |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910578233.2A CN110416354A (en) | 2019-06-28 | 2019-06-28 | A kind of two-in-one method of tubular film plating machine |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110416354A true CN110416354A (en) | 2019-11-05 |
Family
ID=68358506
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910578233.2A Pending CN110416354A (en) | 2019-06-28 | 2019-06-28 | A kind of two-in-one method of tubular film plating machine |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110416354A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110993548A (en) * | 2019-11-15 | 2020-04-10 | 通威太阳能(眉山)有限公司 | Front and back film two-in-one method and equipment |
| CN111129216A (en) * | 2019-12-17 | 2020-05-08 | 湖南红太阳光电科技有限公司 | Equipment for preparing double-sided passivation film of PERC battery and using method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202307808U (en) * | 2011-10-28 | 2012-07-04 | 上海太阳能工程技术研究中心有限公司 | Serial device for preparing double-sided heterojunction solar battery by PECVD (Plasma Enhanced Chemical Vapor Deposition) method |
| CN202308007U (en) * | 2011-10-28 | 2012-07-04 | 上海太阳能工程技术研究中心有限公司 | Cluster-type device for preparing double-sided heterojunction solar battery by plasma enhanced chemical vapor deposition (PECVD) method |
| CN106803525A (en) * | 2015-11-26 | 2017-06-06 | 余姚快益电器有限公司 | Double-sided coating film passivated cell |
| CN107946220A (en) * | 2017-12-22 | 2018-04-20 | 君泰创新（北京）科技有限公司 | Cell piece slice turning device |
| CN207765473U (en) * | 2018-02-28 | 2018-08-24 | 君泰创新（北京）科技有限公司 | A kind of overturning of solar battery sheet and check device |
-
2019
- 2019-06-28 CN CN201910578233.2A patent/CN110416354A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202307808U (en) * | 2011-10-28 | 2012-07-04 | 上海太阳能工程技术研究中心有限公司 | Serial device for preparing double-sided heterojunction solar battery by PECVD (Plasma Enhanced Chemical Vapor Deposition) method |
| CN202308007U (en) * | 2011-10-28 | 2012-07-04 | 上海太阳能工程技术研究中心有限公司 | Cluster-type device for preparing double-sided heterojunction solar battery by plasma enhanced chemical vapor deposition (PECVD) method |
| CN106803525A (en) * | 2015-11-26 | 2017-06-06 | 余姚快益电器有限公司 | Double-sided coating film passivated cell |
| CN107946220A (en) * | 2017-12-22 | 2018-04-20 | 君泰创新（北京）科技有限公司 | Cell piece slice turning device |
| CN207765473U (en) * | 2018-02-28 | 2018-08-24 | 君泰创新（北京）科技有限公司 | A kind of overturning of solar battery sheet and check device |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110993548A (en) * | 2019-11-15 | 2020-04-10 | 通威太阳能(眉山)有限公司 | Front and back film two-in-one method and equipment |
| CN111129216A (en) * | 2019-12-17 | 2020-05-08 | 湖南红太阳光电科技有限公司 | Equipment for preparing double-sided passivation film of PERC battery and using method thereof |
| CN111129216B (en) * | 2019-12-17 | 2021-10-26 | 湖南红太阳光电科技有限公司 | Equipment for preparing double-sided passivation film of PERC battery and using method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110416354A (en) | A kind of two-in-one method of tubular film plating machine | |
| CN106609383B (en) | A kind of stripping zinc for small pole plate electrowinning zinc picks plate and brush board production line and its method | |
| CN106757180B (en) | A kind of full-automatic stripping zinc unit with prestripping function | |
| CN204732429U (en) | A kind of production equipment of crystal silicon solar batteries sheet | |
| CN104362221B (en) | A kind of preparation method of the polycrystalline silicon solar cell of RIE making herbs into wool | |
| CN101096759B (en) | Magnesium alloy chemical plating nickel solution and method | |
| CN201793745U (en) | Etching waste liquid regeneration and copper recovery processing system | |
| CN204047949U (en) | Pair roller type ratio of rhizome medicinal material cleaning drying device | |
| CN208662513U (en) | A kind of vacuum degreasing integrated treatment sintering furnace | |
| CN206746880U (en) | A kind of spraying equipment auxiliary mould | |
| CN109309001B (en) | Method for manufacturing GPP chip by adopting printing process | |
| CN210684001U (en) | High-efficient single crystal texturing equipment | |
| CN204623946U (en) | A kind of ceramic tile overturning device | |
| CN203155612U (en) | Silicon wafer fine washing device | |
| CN113306027B (en) | Automatic production line for bonding silicon rods | |
| CN213936243U (en) | Production process line for manufacturing lithium battery negative electrode material in coating granulation and carbonization stages | |
| CN208690280U (en) | A kind of Novel back passivation positive film board plated film disjunctor handling equipment of notacoria | |
| CN209217110U (en) | A kind of priming device of the lithium battery with heat sinking function | |
| CN209426004U (en) | A kind of coating steel pipe leaching modeling pre-treatment integrated device | |
| CN210754907U (en) | Sinker forging device | |
| CN217507268U (en) | Mechanism is sent with diving in making herbs into wool washing | |
| CN105710066B (en) | A kind of method for removing solar energy single germanium wafer polishing residual medicament | |
| CN210926048U (en) | Groove type and chain type combined black silicon texturing equipment | |
| CN202498054U (en) | Cleaning machine for finished bearing product | |
| CN111644411B (en) | High-pressure water type production line system for removing oxide skin of forge piece |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20191105 |
|
| RJ01 | Rejection of invention patent application after publication |