CN110408896A - Band transparent conductive film substrate and its manufacturing equipment and method and solar battery - Google Patents
Band transparent conductive film substrate and its manufacturing equipment and method and solar battery Download PDFInfo
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- CN110408896A CN110408896A CN201910327419.0A CN201910327419A CN110408896A CN 110408896 A CN110408896 A CN 110408896A CN 201910327419 A CN201910327419 A CN 201910327419A CN 110408896 A CN110408896 A CN 110408896A
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- 239000000758 substrate Substances 0.000 title claims abstract description 104
- 238000000034 method Methods 0.000 title claims abstract description 84
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 79
- 239000011159 matrix material Substances 0.000 claims abstract description 209
- 230000008569 process Effects 0.000 claims abstract description 69
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 47
- 238000004544 sputter deposition Methods 0.000 claims abstract description 47
- 230000007246 mechanism Effects 0.000 claims abstract description 20
- 239000007789 gas Substances 0.000 claims description 101
- 229910052739 hydrogen Inorganic materials 0.000 claims description 58
- 239000001257 hydrogen Substances 0.000 claims description 57
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 56
- 238000010438 heat treatment Methods 0.000 claims description 41
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 27
- 230000002829 reductive effect Effects 0.000 claims description 11
- 238000010276 construction Methods 0.000 claims description 9
- 238000005507 spraying Methods 0.000 claims description 6
- 230000008676 import Effects 0.000 claims description 3
- 239000007921 spray Substances 0.000 abstract description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 20
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000009826 distribution Methods 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 239000000376 reactant Substances 0.000 description 4
- 238000005266 casting Methods 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 150000002500 ions Chemical group 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000009738 saturating Methods 0.000 description 2
- 101150064138 MAP1 gene Proteins 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000005478 sputtering type Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5806—Thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Thermal Sciences (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Manufacturing Of Electric Cables (AREA)
- Physical Vapour Deposition (AREA)
- Photovoltaic Devices (AREA)
- Non-Insulated Conductors (AREA)
Abstract
The present invention discloses band transparent conductive film substrate and its manufacturing equipment and method and solar battery.This has the third register being heat-treated to the matrix being placed in the state of pallet and the first film formation device and the second film formation device that the first transparent conductive film and the second transparent conductive film are respectively formed to the face side and back side of matrix with transparent conductive film substrate.Near indoor first target that forms a film, the gas leading-out portion of the first process gas introducing mechanism is disposed in the target positioned at left side towards in the first target on the moving direction of matrix and sprays on the position of the first process gas.Near indoor second target that forms a film, it is equipped with the gas leading-out portion of the second process gas introducing mechanism.First target and the configuration of the second target are in film forming room, to form the first transparent conductive film by face side of the sputtering method to matrix when matrix is by before the first target, the second transparent conductive film is formed by back side of the sputtering method to matrix when matrix is by before the second target.
Description
Technical field
The present invention relates to a kind of face side by matrix transparent conductive film different with back side configuration hydrogen content
At the manufacturing equipment with transparent conductive film substrate, the manufacturing method with transparent conductive film substrate, band transparent conductive film substrate and
Solar battery.
Background technique
In recent years, since (heterojunction type crystallizes the solar battery with silicon metal and the hetero-junctions of amorphous silicon (a-Si)
Si solar battery) there is high conversion efficiency compared with previous system of crystallization silicon solar cell, therefore attracted attention.For different
Matter junction type crystallizes for Si solar battery, and electrically conducting transparent oxygen is usually formed on the amorphous silicon on the two sides for being disposed in silicon metal
Compound (TCO, Transparent Conducting Oxide).Here, TCO is material that is transparent and being powered, such as can enumerate
Indium oxide, tin oxide or zinc oxide etc..
The TCO for being disposed in the light receiving side of solar battery is especially required to meet low resistance and high-transmission rate simultaneously.Make
A scheme to solve this problem, it is known to which hydrogeneous transparent conductive film is set to the solar battery (patent of light receiving side
Document 1).
However, from the viewpoint of solar cell device, with following problem: due to constitute TCO substrate it is non-
The Plasma contact of crystal silicon (a-Si) and hydrogen and H occurs2O, and due to H2O is attached to again on amorphous silicon (a-Si),
Insulating layer is generated on interface between amorphous silicon (a-Si) and the TCO being deposited on the amorphous silicon (a-Si).Due to this exhausted
The presence of edge layer is the principal element electrically flowed hindered on laminating direction, therefore needs to develop the solution to the problem.
Patent document 1: international application for patent discloses No. 2013/061637
Summary of the invention
The present invention is to propose in view of the foregoing, and the purpose is to provide a kind of face side by matrix and the back side
The manufacturing equipment with transparent conductive film substrate made of the different transparent conductive film of hydrogen content, band transparent conductive film substrate is arranged in side
Manufacturing method, band transparent conductive film substrate and solar battery.
The manufacturing equipment with transparent conductive film substrate of the 1st aspect of the present invention includes having third register and the
The film forming room of one film formation device and the second film formation device, the third register to the matrix in the state of being placed in pallet into
Row heat treatment, first film formation device and second film formation device are respectively formed the face side and back side of described matrix
First transparent conductive film and the second transparent conductive film, the film forming is indoor, construction first film formation device and to described
The face side of matrix is formed near the first target of the first transparent conductive film, for supplying the first work of the first hydrogeneous process gas
The gas leading-out portion of skill gas introducing mechanism is disposed on the moving direction of described matrix is located at a left side in first target
The target of side (upper hand side) sprays on the position of first process gas, in indoor, construction second film forming that forms a film
Device and the back side of described matrix is formed near the second target of the second transparent conductive film, is equipped with supply not hydrogeneous second
The gas leading-out portion of second process gas introducing mechanism of process gas, first target and second target configuration it is described at
In film room, to form institute by face side of the sputtering method to the matrix when described matrix is by before first target
The first transparent conductive film is stated, and when described matrix is by before second target, by sputtering method to the back of the matrix
Surface side forms second transparent conductive film.
It, can also be in the film forming room in the manufacturing equipment with transparent conductive film substrate of the 1st aspect of the present invention
In, in a manner of the inner space being connected between first target and second target, have configured with more than one
The exhaust apparatus of air entry.
In the manufacturing equipment with transparent conductive film substrate of the 1st aspect of the present invention, the pallet can also have use
In expose described matrix front and back opening portion and support the matrix side position, it is more in the film forming room
A pallet along the pallet direction of travel arranging arranged in a straight line, and the particular pallet in multiple pallets have pass through institute
When stating before the first target and second target on the direction of travel of the particular pallet and before and after the particular pallet
Leading pallet and the position that is overlapped respectively of rear row pallet, described specific from first target side or second target side
When pallet, the particular pallet and one group of leading pallet and rear row pallet formation positioned at the front and back of the particular pallet, and institute
It states manufacturing equipment and has the shifting for controlling each pallet in such a way that leading pallet and rear row pallet clip particular pallet formation the same face
Dynamic device.
It, can also be in the film forming room in the manufacturing equipment with transparent conductive film substrate of the 1st aspect of the present invention
, positioned at described matrix by the inner space on the position before before first target and second target and be located at warp
The inner space on the position to form a film before each target is crossed, each inner space is each equipped with more than one described
Three registers.
In the manufacturing equipment with transparent conductive film substrate involved in the 1st aspect of the present invention, can also it is described at
In film room, it is disposed in for supplying the gas leading-out portion of the first process gas introducing mechanism of the first hydrogeneous process gas
On the position for spraying first process gas towards discharge space, the discharge space, which generates, is constructing first film formation device
And the face side of described matrix is formed between the first target of the first transparent conductive film and the described matrix of movement.
It, can also be in the film forming room in the manufacturing equipment with transparent conductive film substrate of the 1st aspect of the present invention
It is interior, it is equipped with flue in a manner of surrounding discharge space, the discharge space, which generates, is constructing first film formation device and right
The face side of described matrix is formed between the first target of the first transparent conductive film and the described matrix of movement.
It, can also be in the film forming room in the manufacturing equipment with transparent conductive film substrate of the 1st aspect of the present invention
Leading portion has loading room with the first register and the heating room with the second register, first register exist
The base of a-Si is equipped to from air atmosphere importing and in the state for being placed in pallet and in front and the back side in reduced atmosphere
Body is heat-treated, and second register is heat-treated to from the loading room mobile next pallet and matrix, in institute
The back segment for stating film forming room has conveying room and takes out room, the conveying room to from the film forming room it is mobile come pallet and matrix into
Row cooling, the room of taking out will export in air atmosphere from the conveying room mobile next pallet and matrix from reduced atmosphere.
The manufacturing method with transparent conductive film substrate of the 2nd aspect of the present invention, which uses at least to have, is packed into room, heating
Room, film forming room, conveying room and take out room first method the manufacturing equipment with transparent conductive film substrate, to be disposed in matrix
Front and the back side on Si film on form transparent conductive film, described matrix is placed on pallet, is fitted into room by described
The maximum value of heat treatment temperature be defined as TLThe maximum value of heat treatment temperature in the heating room is defined as T by [DEG C]H
The maximum value of heat treatment temperature in the film forming room is defined as T by [DEG C]SPIn the case where [DEG C], meet TL≥TSPOr TH≥
TSPRelational expression.
It, can also be in the loading room in the manufacturing method with transparent conductive film substrate of the 2nd aspect of the present invention
In the inner space of inner space and the heating room, by being arranged respectively at the face side of the matrix and the first tune of back side
Warm device and the second register are heat-treated described matrix.
It, can also be in the film forming room in the manufacturing method with transparent conductive film substrate of the 2nd aspect of the present invention
, positioned at described matrix by the inner space on the position before before first target and be located at the matrix by this
In the inner space on position to form a film before one target, pass through the third tune for the non-film surface side configured in the matrix
Warm device is heat-treated the matrix.
It, can also be in the film forming room in the manufacturing method with transparent conductive film substrate of the 2nd aspect of the present invention
, positioned at described matrix by the inner space on the position before before second target and be located at the matrix by this
In the inner space on position to form a film before two targets, pass through the third tune for the non-film surface side configured in the matrix
Warm device is heat-treated the matrix.
The 3rd aspect of the present invention is to pass through the a- in the front and the back side that are disposed in matrix with transparent conductive film substrate
Substrate made of the first transparent conductive film and the second transparent conductive film is separately equipped on Si film, it is transparent described first will be included in
Hydrogen content in conductive film is defined as CH1[atomicity/cm3], it will include the hydrogen content definition in second transparent conductive film
For CH2[atomicity/cm3] in the case where, meet CH1> CH2Relational expression.
In the band transparent conductive film substrate of the 3rd aspect of the present invention, the CH1It is 1021Rank (platform), and it is described
CH2[atomicity/cm3] it is 1020Rank.
The solar battery of the 4th aspect of the present invention has by the a-Si in the front and the back side that are disposed in matrix
Be separately equipped with made of the first transparent conductive film and the second transparent conductive film band transparent conductive film substrate, by described matrix just
Surface side is set as light incident surface, will include that hydrogen content in first transparent conductive film is defined as CH1[atomicity/cm3], it will
It include that hydrogen content in second transparent conductive film is defined as CH2[atomicity/cm3] in the case where, meet CH1> CH2's
Relational expression.
In the solar battery of the 4th aspect of the present invention, the CH1It is 1021Rank, and the CH2[atomicity/
cm3] it is 1020Rank.
The manufacturing method of band transparent conductive film (hereinafter, also referred to TCO) substrate of aforesaid way according to the present invention, first
Film formation device uses the first target and hydrogeneous process gas, by splashing in the specific internal space indoor, positioned at leading portion that forms a film
The method of penetrating to form the first transparent conductive film to the face side of matrix.Then, the second film formation device uses the second target and not hydrogeneous
Process gas is formed the back side of matrix by sputtering method in the specific internal space indoor, positioned at back segment that forms a film
Second transparent conductive film.In other words, manufacturing equipment of the invention can be present in identical film forming room but in the row of matrix
After the first hydrogeneous transparent conductive film is formed in the face side of matrix in the specific film formation space of leading portion on into direction,
The second not hydrogeneous transparent conductive film is formed in the back side of matrix in the specific film formation space for being located at back segment.
Therefore, the manufacturing equipment of aforesaid way of the invention is previously provided on the both sides to matrix constitutes TCO
The substrate of the uncrystalline silicon (a-SI) of substrate forms the first transparent conductive film using face side of the hydrogeneous process gas to substrate
In the case of, even if generating H due to hydrogeneous Plasma contact2O also can solve following problem: that is, due to the H2O moves into base
The back side of body and on being attached to the amorphous silicon (a-Si) of the back side of matrix again etc., in the amorphous silicon of the back side of matrix
(a-Si) insulating layer is generated on the interface between the TCO that is deposited on the amorphous silicon (a-Si).
Therefore, the present invention provides the transparent conductive film different with back side arranging hydrogen content to the face side in matrix and forms
The manufacturing equipment made contributions of the formation with transparent conductive film substrate.
The manufacturing method with transparent conductive film substrate of aforesaid way of the invention, which uses at least to have, is packed into room, heating
Room, film forming room, conveying room and the manufacturing equipment with transparent conductive film substrate for taking out room, this method carry out in the film forming room
While heat treatment on the front and the back side that are disposed in the matrix being placed on pallet Si film formed transparent conductive film it
Before, it is heat-treated in advance in described be fitted into room and the heating room.
About heat treatment condition at this time, the maximum value of the heat treatment temperature being fitted into room is defined as TL
The maximum value of heat treatment temperature in the heating room is defined as T by [DEG C]H[DEG C], by the heat treatment temperature in the film forming room
The maximum value of degree is defined as TSPIn the case where [DEG C], meet TL≥TSPOr TH≥TSPRelational expression.
In order to meet the relational expression, by the maximum for controlling each heat treatment temperature being fitted into room, heating room and film forming room
Value, so that the matrix for being placed in pallet welcomes peak temperature in the loading room and heating room for being located at the leading portion of film forming room.Mounting
The state of temperature lower than the peak temperature is in the matrix on the pallet for being moved to film forming room.It is reduced as a result, because being placed in support
It the releasing of the indoor water of film forming caused by the matrix of disk and brings into.
Therefore, the manufacturing method with transparent conductive film substrate of aforesaid way according to the present invention, due to reducing film forming room
It the releasing of interior water and brings into, therefore can be stably formed that hydrogen content is arranged by face side in matrix and back side is different
Transparent conductive film made of band transparent conductive film substrate.
If manufacturing equipment and manufacturing method by way of aforementioned present invention, to be formed in the front for being disposed in matrix
And band transparent conductive film substrate made of the first transparent conductive film and the second transparent conductive film is separately equipped on the Si film at the back side,
Following band transparent conductive film substrate can then be obtained: that is, the band transparent conductive film substrate transparent is led will be included in described first
Hydrogen content in electrolemma is defined as CH1[atomicity/cm3], it will include that hydrogen content in second transparent conductive film is defined as
CH2[atomicity/cm3] in the case where, meet CH1> CH2Relational expression.The band electrically conducting transparent of aforesaid way of the invention as a result,
Structure made of the different transparent conductive film of hydrogen content is arranged as having the face side in matrix and back side in ilm substrate, and
The face side of matrix can be used as to light incident surface, therefore be suitble to solar battery purposes.
According to the manufacturing equipment and manufacturing method of the mode of aforementioned present invention, can obtain in the front and back for being disposed in matrix
Band transparent conductive film substrate made of the first transparent conductive film and the second transparent conductive film is separately equipped on the Si film in face.Pass through
Using the band transparent conductive film substrate, following solar battery can be obtained: that is, the solar battery by described matrix just
Surface side is set as light incident surface, will include that hydrogen content in first transparent conductive film is defined as CH1[atomicity/cm3], it will
It include that hydrogen content in second transparent conductive film is defined as CH2[atomicity/cm3] in the case where, meet CH1> CH2's
Relational expression.Solar battery with the structure can improve fill factor (F.F.:Fill Factor) and generating efficiency (Eff).
In addition, fill factor be " by peak power output (Pmax) divided by the product of open-circuit voltage (Voc) and short circuit current (Isc) after
Value ", generating efficiency be " product of open-circuit voltage (Voc), short-circuit current density (Jsc) and fill factor (F.F.) ".
Detailed description of the invention
Fig. 1 is the sectional view for indicating an example of the manufacturing equipment with transparent conductive film substrate.
Fig. 2 is the sectional view for indicating an example for the matrix being placed under pallet state.
Fig. 3 is the enlarged cross-sectional view for indicating the gas leading-out portion in the structural example with two targets.
Fig. 4 is the enlarged cross-sectional view for indicating the gas leading-out portion in the structural example with three targets.
Fig. 5 is an example for indicating the solar battery with transparent conductive film substrate and comprising this with transparent conductive film substrate
Sectional view.
Fig. 6 is the flow chart for indicating the previous manufacturing method with transparent conductive film substrate.
Fig. 7 is the flow chart for indicating the manufacturing method with transparent conductive film substrate of embodiments of the present invention.
Fig. 8 is the list for indicating the temperature of tray in the embodiment of the present invention 1~4.
Fig. 9 is the chart for indicating the temperature of tray in the embodiment of the present invention 1~4.
Figure 10 is the figure (H for indicating the hydrogen content distribution of transparent conductive film2The case where O/Ar=0%).
Figure 11 is the figure (H for indicating the hydrogen content distribution of transparent conductive film2The case where O/Ar=6%).
Specific embodiment
In the following, based on attached drawing to the best mode of the manufacturing equipment of the invention with transparent conductive film substrate and manufacturing method
It is illustrated.In addition, present embodiment be in order to better understand invention objective and what is carried out illustrate, do not referring in particular to
In the case where fixed, the present invention is not limited.
<first embodiment>
In the following, referring to Fig. 5, to front and the two faces of the back side by matrix that Si film coats to cover the a-Si
The manufacturing method that the mode of film is arranged made of transparent conductive film with transparent conductive film substrate is illustrated.
Fig. 5 is an example for indicating the solar battery with transparent conductive film substrate and comprising this with transparent conductive film substrate
Sectional view.
In Fig. 5, the matrix 101 (substrate) of structural belt transparent conductive film substrate 10A (10) is flat system of crystallization silicon
This two sides positive 101a and back side 101b of substrate, matrix 101 is coated by Si film.In Fig. 5, just towards matrix 101
(directed downwardly) arrow of face 101a indicates light incident direction.
The Si film (in Fig. 5 label be) being arranged on the positive 101a as light incident side by with positive 101a phase
The i type Si film 102 for connecing setting and the p-type Si film 103 being set on the i type Si film 102 construction.In addition, to cover shape
The mode of the p-type Si film 103 of the outer surface of Si film (α) is provided with the first transparent conductive film 104.In addition, thoroughly first
The electrode 105 formed by metal film is equipped on the outer surface of bright conductive film 104.
On the other hand, be disposed in Si film (β is expressed as in Fig. 5) on the back side 101b as non-light incident side by
Connect the i type Si film 112 of setting with back side 101b and the N-shaped Si film 113 that is set on the i type Si film 112 constructs.Separately
Outside, the second transparent conductive film 114 is provided in a manner of covering the N-shaped Si film 113 for the outer surface for forming Si film (β).This
Outside, configured with the electrode 115 formed by metal film on the outer surface of the second transparent conductive film 114.
In the present invention, the manufacturing equipment and manufacturing method by aftermentioned with transparent conductive film substrate include to control
Hydrogen content in the first transparent conductive film 104 and the second transparent conductive film 114.That is, the first transparent conductive film will be included in
Hydrogen content in 104 is defined as CH1[atomicity/cm3], it will include that hydrogen content in second transparent conductive film is defined as
CH2[atomicity/cm3] in the case where, to meet CH1> CH2The mode of relational expression controlled.Band of the invention is saturating as a result,
Bright conductive film substrate has the structure made of the face side of the matrix transparent conductive film different with back side arranging hydrogen content, this
Invention with transparent conductive film substrate due to can by the face side of matrix be used as light incident surface, be suitble to used for solar batteries
On the way.
In the following, structural body made of Si film (α) and Si film (β) will be arranged to matrix 101 is referred to as intermediate structures 1A
(1).Structural body made of the first transparent conductive film 104 and the second transparent conductive film 114, which is arranged, to intermediate structures 1A (1) is
Band transparent conductive film substrate 10A (10).
In addition, using system of crystallization silicon substrate that electrode is arranged as matrix 101 and to band transparent conductive film substrate 10A (10)
105 and electrode 115 made of structural body be solar battery 100A (100).
For by the manufacturing equipment of the invention of explained later and manufacturing method production, there is above structure (Fig. 5)
I.e. for band transparent conductive film substrate 10A (10) with the first transparent conductive film 104 and the second transparent conductive film 114, from rear
Confirmed in the table 2 stated band transparent conductive film substrate 10A (10) have matrix face side and back side be arranged hydrogen content
Structure made of different transparent conductive films.With the structure with transparent conductive film substrate due to can be by the face side of matrix
As light incident surface, therefore it is suitble to solar battery purposes.
In addition, fill factor can be improved using the solar battery with transparent conductive film substrate being made of above structure
(F.F.:Fill Factor) and generating efficiency (Eff).
Although in addition, being not known in Fig. 5 indicates to match but it is also possible to be the positive side 101a as needed in matrix 101
Structure equipped with anti-reflecting layer (layer:AR layers of Anti Reflection).As anti-reflecting layer, such as it is suitble to using insulation
Property nitride film, silicon nitride film, oxidation titanium film or pellumina etc..
Fig. 6 and Fig. 7 is the flow chart for indicating the manufacturing method with transparent conductive film substrate, and Fig. 6 indicates previous example, Fig. 7 table
Show embodiments of the present invention.Embodiments of the present invention are different from previous example in " S16, S17 " process described below.
Previous band transparent conductive film substrate is formed via S51~S58 process flow shown in fig. 6.That is, by order
It carries out by " preparing c-Si (n), forming texture (two sides), form i type a-Si (two sides), form p-type a-Si (front), form N-shaped
A-Si (back side), anhydrous TCO (front) is formed, water (or anhydrous) TCO (back side) is formed with and forms electrode (two sides) " composition
Eight procedures are handled and are manufactured.
In particular, in the previous manufacturing method with transparent conductive film substrate, when face side of the formation as light-receiving surface
" water-free process gas " is used when TCO film, uses " aqueous process when forming the back side TCO film as non-illuminated surface
Gas ", and in the case where being formed a film in the order, " aqueous process gas " meeting used when forming back side TCO film
The face side TCO film surface to have formed a film in advance is moved into, and forms electricity on TCO film surface in the state of in water is attached with
Pole.Therefore, it is possible to occur between face side TCO and electrode electrical bad.
On the other hand, band transparent conductive film substrate of the invention is formed via S11~S18 process flow shown in Fig. 7.
That is, by carrying out " preparing c-Si (n), formation texture (two sides), formation i type a-Si (two sides), forming p-type a-Si (just in order
Face), form N-shaped a-Si (back side), be formed with water TCO (front), forming anhydrous TCO (back side) and formation electrode (two sides) " group
At eight procedures processing and manufacture.In the case where being formed a film in the order, the TCO film of back side " is free of due to using
The process gas of water ", therefore even if the water-free process gas moves into the face side TCO film surface to have formed a film in advance, also not
It is likely to become the state that water is attached on face side TCO film surface.Thereby, it is possible in the case where not influenced by water, in front
Electrode is formed on the TCO film surface of side.Therefore, it solves the problems, such as to occur between face side TCO and electrode electrical bad.
In order to make the band transparent conductive film substrate of aforementioned present invention, such as it is suitble to lead using as shown in Figure 1 with transparent
The manufacturing equipment of electrolemma substrate.Fig. 2 is an example for indicating matrix in the state of being placed in pallet in the manufacturing equipment of Fig. 1
Sectional view.Hereinafter, being described in detail referring to FIG. 1 and FIG. 2 to the manufacturing equipment of the invention with transparent conductive film substrate.
<sputtering equipment>
In the manufacturing method of the invention with transparent conductive film substrate, it is equivalent to the Si film of the substrate of transparent conductive film
(α, β) uses the film being previously formed on matrix 101 by well known CVD equipment.Here, use as shown in Figure 1 can be passed through
The manufacturing equipment (hereinafter referred to as sputtering equipment) that sputtering method forms a film forms two transparent conductive films 104 (TCO1), 114
(TCO2).Manufacturing equipment 700 is in-line arrangement sputtering equipment, is to have the horizontal conveyer for keeping matrix 101 and being transported
Horizontal transport type sputtering equipment.The discharge type of sputtering equipment 700 is not limited to DC, is also possible to the folded of RF or (DC+RF)
Add.
In sputtering equipment shown in Fig. 1, be connected in series configured with multiple process chambers [be packed into room L, heating room H, form a film into
Mouth room ENT, the first film forming room SP1, the second film forming room SP2, third film forming room SP3, the 4th film forming room SP4, film forming downstream chamber
EXT, conveying room B, room UL is taken out].It is equipped with the pallet for being formed with the matrix 101 [intermediate structures 1A (1)] of Si film (α, β)
400 pass through each process chamber in order, to make the electrically conducting transparent of embodiments of the present invention on intermediate structures 1A (1)
Film.
I.e. as described later, in the present invention, four film forming room (SP1 are passed through with the matrix 101 after the heat treatment of desired temperature
→ SP2 → SP3 → SP4) in, thus matrix 101 face side [on the Si film (α) as light incident surface] formed " hydrogen contains
The first more transparent conductive film 104 (TCO1) of amount ", in the back side [on the Si film (β) as non-light incident surface] of matrix 101
Form the second few transparent conductive film 114 (TCO2) of hydrogen content.
When forming the first transparent conductive film 104 (TCO1) and the second transparent conductive film 114 (TCO2) by sputtering method,
It is suitble to the pallet 400 using structure as shown in Figure 2.That is, pallet 400 is dashed forward by main body 401, positioned at the first of the inside of main body 401
Portion 402 and second protruding portion 403a, 403b positioned at the outside of main body 401 are constructed out, wherein the main body 401 has for revealing
Out as the first opening portion 400a of the positive α of the matrix of handled object 101 and back side β and the second opening portion 400b.
First protruding portion 402 is in such a way that the first opening portion 400a is set to be greater than the second opening portion 400b in main body
401 inside loads matrix 101.The first opening portion 400a is defined by the medial surface 401s of main body 401 as a result, by prominent
The medial surface 402s in portion 402 defines the second opening portion 400b out.This is the first electrically conducting transparent in order to be used as light incident side
Film 104 (TCO1) is formed as the area bigger than the second transparent conductive film 114 (TCO2) as non-light incident side.
Have second protruding portion 403a, 403b in the outside of main body 401.In the row of pallet (also referred to particular pallet) 400
It is prominent towards second be extended in the direction of front tray (also referred to leading pallet) 410 into direction (arrow direction of Fig. 2)
The second protruding portion 403b that portion 403a and direction are extended in the direction of rear pallet (row pallet after also referred to) 420 out, is set
It is set to and is inverted upside down with the link position of main body 401.That is, in a manner of Chong Die with the second protruding portion 403a of pallet 400, Yu
The second protruding portion 413b is configured on front tray 410.Equally, in a manner of Chong Die with the second protruding portion 403b of pallet 400, in
The second protruding portion 423a is configured on rear pallet 420.
Second protruding portion 403a of pallet 400 shape Chong Die with the second protruding portion 413b holding in front tray 410 as a result,
State, and the second protruding portion 403b of pallet 400 and the second protruding portion 423a in rear pallet 420 keeps the same of overlap condition
When, three pallets 400,410,420 are connected, to carry out the first transparent conductive film 104 (TCO1) and the second transparent conductive film
The spatter film forming of 114 (TCO2).
In manufacturing equipment of the invention, on the direction of travel of pallet, it is connected with the pallet for loading matrix 101
400,410,420, gap is not present between pallet.Therefore, sputtering particle can be greatly reduced by the sky between pallet
Gap reaches a possibility that non-film face (for example, in the case where front is film forming face, the back side is non-film face) of matrix 101.
Equally, additionally it is possible to the process gas for sputtering be inhibited to move into.
Therefore, the present invention realizes that the following manufacturing equipment with transparent conductive film substrate, the manufacturing equipment are avoided that sputtering
Particle is attached on the non-film face of matrix 101 or the non-film face of matrix 101 is exposed in the process gas for sputtering
Unfavorable condition.The function and effect it is below the present invention in extremely efficient play a role, the invention with desired temperature heat at
Matrix 101 after reason is interior by four film forming room (SP1 → SP2 → SP3 → SP4), so that the face side in matrix 101 [is used as
On the Si film (α) of light incident surface] formed hydrogen content more than the first transparent conductive film 104 (TCO1), in the back side of matrix 101
[on the Si film (β) as non-light incident surface] forms the second few transparent conductive film 114 (TCO2) of hydrogen content.
It is connected in series in the sputtering equipment of Fig. 1 and [is packed into room L, heating room H, film forming inlet chamber configured with multiple process chambers
ENT, the first film forming room SP1, the second film forming room SP2, third film forming room SP3, the 4th film forming room SP4, film forming downstream chamber EXT, fortune
It send room B and takes out room UL].The sputtering equipment of Fig. 1 has: in mounting matrix 101 [intermediate structures 1A (1)] and horizontal holding base
The mechanism (not shown) transported in the state of body 101 from loading room L to taking-up room UL.
In the sputtering equipment of Fig. 1, appended drawing reference DV1~DV6 indicates gate valve.
Between airspace outside first gate valve DV1 blocking equipment and the inner space of loading room L.
Second gate valve DV2 is blocked between the inner space for being packed into room L and the inner space for heating room H.
Third gate valve DV3 is blocked between the inner space of heating room H and the inner space for the inlet chamber ENT that forms a film.4th
Valve DV4 is blocked between the inner space of film forming downstream chamber EXT and the inner space of conveying room B.5th gate valve DV5 blocks conveying room
Between the inner space of B and the inner space for taking out room UL.6th gate valve DV6 is blocked outside the inner space for taking out room UL and equipment
Between the airspace in portion.
In the sputtering equipment of Fig. 1, six chambers (film forming inlet chamber ENT, the first film forming room SP1, the second film forming room SP2,
Third film forming room SP3, the 4th film forming room SP4 and film forming downstream chamber EXT) inner space all be connected to, construct a vacuum tank.
In six chambers, indicate that " chain-dotted line " of the mutual partition of chamber being located on adjacent position means to be located on adjacent position
The inner space of chamber communicate with each other.
Matrix in the inner space for being fitted into room L, being placed in pallet 400 is being transported into from the exterior space of sputtering equipment
On the front and this two sides of the back side of 101 [intermediate structures 1A (1)], Si film is pre-formed with by well known CVD equipment.Base
Body 101 can be moved towards taking out room UL along forward direction in the state of being equipped on pallet 400 from room L is packed into.That is, in Fig. 1 institute
In the manufacturing equipment shown, the matrix 101 for being equipped on pallet 400 is returned without reverse [from room UL is taken out towards the direction for being packed into room L]
It returns.Therefore, the production of the sputtering equipment of Fig. 1 is excellent.
By carrying out the opening and closing operations of the first gate valve DV1, matrix 101 is transported into dress from airspace (outside sputtering equipment)
It enters the room in the inner space of L.Using first exhaust device P11, the inner space for being loaded into room L is set as desired reduced atmosphere.
As needed, using register H11, the H12 for being packed into room L, implement to heat from the two sides of matrix 101 in being fitted into room L.
By carrying out the opening and closing operations of the second gate valve DV2, the matrix 101 not being heat-treated or heat-treated as preferred temperature
Matrix 101 it is mobile to heating room H from room L is packed into.
Then, for from be fitted into room L be moved to heating room H in matrix 101 for, at the A of place, pass through register
H21, H22 implement to be heat-treated from the two sides of matrix 101.At this point, using second exhaust device P21, to the inner space of heating room H
Keep desired reduced atmosphere.By carrying out the opening and closing operations of third gate valve DV3, become the base of preferred temperature in heating room H
Body 101 is mobile from heating room H to film forming inlet chamber ENT.
Then, it is moved to for the matrix 101 in film forming inlet chamber ENT for from heating room H, at the B of place, passes through tune
Warm device H311, H312 implement to heat from the two sides of matrix 101.Become the base of preferred temperature in film forming inlet chamber ENT
Body 101 carries out desired from film forming inlet chamber ENT by the inner space of four film forming room (SP1 → SP2 → SP3 → SP4)
Then film forming is moved to film forming downstream chamber EXT.
Cooperation is located at the first film forming room SP1, the second film forming room SP2, third film forming room SP3 and the 4th film forming room of back segment
It is in SP4, form the first transparent conductive film 104 (TCO1) and atmospheric condition when the second transparent conductive film 114 (TCO2) (sputters
Membrance casting condition etc.), to adjust the atmosphere for the film forming inlet chamber ENT for containing matrix 101.First transparent conductive film 104
(TCO1) and the second transparent conductive film 114 (TCO2) will be formed on the positive back side of matrix 101.
Register H322, the register are configured in the first film forming room SP1 being located at after film forming inlet chamber ENT
H322 is heat-treated the back side of matrix 101 when matrix 101 is by place C.It will be next thereby, it is possible to adjust
The temperature of matrix 101 before the first transparent conductive film of formation 104 (TCO1) carried out in two film forming room SP2.
It is configured in the second film forming room SP2 being located at after the first film forming room SP1: register H332, in matrix 101
By being heat-treated when the D of place to the back side of matrix 101；With the first film formation device, by for the face side shape to matrix 101
It is constructed at a pair of of rotary target TG21, TG22 of the first transparent conductive film 104 (TCO1).Thereby, it is possible to from as non-film face
The back side (being lower surface in Fig. 1) starts to adjust film-forming temperature to the matrix 101 when forming the first transparent conductive film 104 (TCO1).
For a pair of of rotary target TG21, TG22, in the leftward position on the direction of travel of matrix 101, there are two techniques for configuration
The export mouth of gas supply mechanism G21, G22.
Matrix 101 so after adjustment temperature passes through the place D of the second film forming room SP2.At this point, pallet 400 is with matrix 101
Opposite with first target TG21, TG22 mode level maintenance matrix 101 in front.Matrix 101 is by pallet 400 by place
D only forms first in the face side of matrix 101 and transparent leads thus by using such as DC sputtering method of first target TG21, TG22
Electrolemma 104 (TCO1).The first transparent conductive film 104 is formed on the Si film (α) of side front (101a) of matrix 101 as a result,
(TCO1).In addition, being also possible to RF or (DC+ as described above, the discharge type of the sputtering method in the present invention is not limited to DC
RF superposition).
At this point, by the direction of travel in matrix towards left side target TG21 injection in a manner of supply inert gas (for example,
Ar) G21 and reactant gas are (for example, O2Gas) or hydrogen-containing gas (for example, H2O) G22 using as formed plasma first
Process gas.In the second film forming room SP2, first target TG21, TG22 is configured above relative to matrix 101, is carried out to sinking
The sputtering of product mode.
Fig. 3 is the enlarged cross-sectional view for indicating the gas leading-out portion in the structural example with two targets.A pair of target shown in Fig. 3
Indicate the first target of a pair TG21, the TG22 of configuration in the second film forming room SP2 of Fig. 1.In Fig. 3, appended drawing reference 400 is to carry
There is the pallet of matrix, the block arrow (on the right side of towards paper) of white hollow indicates the moving direction of pallet (that is, matrix).
As shown in figure 3, preferably following structure: that is, the first film formation device described in the film forming interior structure and right
The face side of described matrix is formed near first target TG21, TG22 of the first transparent conductive film, for supplying the first process gas
In reactant gas or hydrogen-containing gas G22 the first process gas introducing mechanism gas leading-out portion (arrow) in described matrix
Moving direction [direction of (extending to the right in Fig. 3 from the right end of pallet 400) white hollow block arrow] on be disposed in
On the position for spraying the first process gas G22 towards the target TG21 positioned at left side in first target TG21, TG22.According to the knot
Structure can carry out the few film forming of hydrogen amount by the cathode consumption hydrogen in left side, and by the cathode on right side.It is formed in the front of matrix as a result,
First transparent conductive film of side can become: the hydrogen concentration in primary growth portion it is higher and with film thickness thickening and hydrogen concentration subtracts
Few film.
In addition, the first process gas that illustration omitted supplies the inert gas G21 in the first process gas in Fig. 3 imports
The gas leading-out portion of mechanism, but it is same as reactant gas or hydrogen-containing gas G22 be not necessarily disposed in left side, such as can also be with
It is the structure for being disposed in right side etc..
In addition, being also possible to following instead of above structure (structure for spraying the first process gas G22 towards target TG21)
Structure: that is, in the film forming room, the first process gas for supplying the first hydrogeneous process gas G22 imports machine
The gas leading-out portion of structure is disposed on the position for spraying the first process gas G22 towards discharge space (plasma), described to put
Electric space (plasma) occurs constructing first film formation device and leading to the face side of described matrix formation first is transparent
Between first target TG21, TG22 and the described matrix of movement of electrolemma.Thereby, it is possible to realize in discharge space (plasma)
It equably include the state of hydrogen, therefore the first transparent conductive film being formed on matrix can realize the equal of hydrogen content in its film
It homogenizes.
In the structure that structure i.e. the first target of Fig. 3 is formed by two cylindrical targets TG21, TG22, the arranging of flue has very much
Effect.In the case where flue is arranged in the structure in figure 3, preferably it is arranged in a manner of surrounding two first targets TG21, TG22
The structure of flue C21, C22.By the way that flue is arranged, it is able to suppress in order to which the face side to described matrix forms the first electrically conducting transparent
Film forming (the shape of the second transparent conductive film of film and the first hydrogeneous process gas 22 that uses to the back side of described matrix
At) bring influence.
Fig. 4 is the enlarged cross-sectional view for indicating the gas leading-out portion in the structural example with three targets.
It is a pair of structure that first target TG21, TG22, which is shown in FIG. 3, but the present invention is not limited to this.For example, as schemed
Shown in 4, the first target is formed by three cylindrical targets TG21, TG22, TG23, described matrix moving direction [(in Fig. 4 from
The right end of pallet 400 extends towards right side) direction of the block arrow of white hollow] on, it is arranged in order arranging from left to right
There are TG23, TG21, TG22, it also can be using the present invention to the structure.TG21, TG22 in Fig. 4 are same a pair first with Fig. 3
Target.
On the moving direction of described matrix, first the first target TG23 is individually located at leading portion, second and third the
One target TG21, TG22 constitute it is a pair of and in the case where being located at back segment, only to supply individually is arranged positioned at the first target TG23 of leading portion
The gas leading-out portion of first process gas introducing mechanism of the first process gas.At this point, to the first target TG23 supply first
The gas leading-out portion of first process gas introducing mechanism of process gas is not limited to a left side on the moving direction of described matrix
Side, such as right side can also be disposed in etc..
To be located at leading portion the first target TG23 supply the first process gas due to first target TG21, TG22 towards back segment
Direction flowing, therefore can also be supplied in first target TG21, TG22 of back segment.It as a result, not necessarily will be to the of back segment
One target TG21, TG22 supplies the gas leading-out portion (gas as shown in Figure 3 of the first process gas introducing mechanism of the first process gas
Body leading-out portion) it is disposed in the structure of Fig. 4.
Flue is set in the structure, the structure that i.e. the first target is formed by three cylindrical targets TG21, TG22, TG23 of Fig. 4
Also very effectively.In the case where flue is arranged in the structure of Fig. 4, the is preferably arranged in a manner of surrounding first the first target TG23
One flue C23, C24, and be arranged in a manner of surrounding second and third first target TG21, TG22 the second flue C21,
C22.It is also same as the structure of Fig. 3 above-mentioned as a result, in the structure of Fig. 4, the effect of setting flue is stably obtained [that is, suppression
It has been made as face side the first transparent conductive film of formation to described matrix and has used, the first hydrogeneous process gas G22
This effect is influenced on film forming (formation of the second transparent conductive film) bring of the back side of described matrix].
In addition, the first target can also be constructed by four or more cylindrical targets.It, will be upper in the case where the first target is four
State the configuration weight of a pair of of target twice.
Equally, in the case where the first target is five, the configuration of first target and a pair of of target is repeated twice.
That is, the present invention can be applied not only to the case where the first target is formed by the cylindrical target of even number root, but also be applied to the first target by
The case where cylindrical target formation of odd number root.
Register H331, the register are configured in the third film forming room SP3 being located at after the second film forming room SP2
H331 is heat-treated the front of matrix 101 when matrix 101 is by place E.
It is configured in the 4th film forming room SP4 being located at after third film forming room SP3: register H341, in matrix 101
When by place F, the front of matrix 101 is heat-treated；With the second film formation device, by for the back side to matrix 101
A pair of of rotary target TG41, the TG43 for forming the second transparent conductive film 114 (TCO2) are formed.Thereby, it is possible to from as non-film face
Front (in Fig. 1 be upper surface) film-forming temperature is adjusted to the matrix 101 when forming the second transparent conductive film 114 (TCO2).
For two for rotary target TG41, TG42, in the leftward position on the direction of travel of matrix 101, there are two techniques for configuration
The export mouth of gas supply mechanism G41, G42.
Matrix 101 so after adjustment temperature passes through the place F of the 4th film forming room SP4.At this point, pallet 400 is with matrix 101
The back side mode level opposite with second TG41, TG42 maintain matrix 101.Matrix 101 is by pallet 400 by place
F only forms second in the back side of matrix 101 and transparent leads thus by using such as DC sputtering method of second target TG41, TG42
Electrolemma 114 (TCO2).The second transparent conductive film 114 is formed on the Si film (β) of side the back side (101b) of matrix 101 as a result,
(TCO2).In addition, being also possible to RF or (DC+ as described above, the discharge type of the sputtering method in the present invention is not limited to DC
RF superposition).
At this point, supplying inertia in a manner of spraying on the direction of travel in matrix towards left side target TG41 or right side target TG42
Gas (for example, Ar gas) or reactant gas are (for example, O2Gas) G42 using as formed plasma process gas.In
In 4th film forming room SP4, target TG41, TG42 configure the sputtering deposited upwards in lower section relative to matrix 101.
In other words, the film forming is indoor, construction second film formation device and is formed to the back side of described matrix
Near second target TG41, TG42 of second transparent conductive film, it is equipped with the second technique for supplying the second not hydrogeneous process gas
The gas leading-out portion of gas introducing mechanism.
For example, the suitable structure of the gas leading-out portion of the second process gas introducing mechanism is as follows: that is, in described matrix
On moving direction, the gas leading-out portion configuration towards in described second target TG41, TG42 positioned at the target TG41 in left side or position
In on the position that the target TG42 on right side sprays second process gas, but the present invention is not limited to the structures.
Second target is also not limited to above-mentioned a pair of of structure.It is same as the first target above-mentioned, it can also be arranged three
Root cylindrical target is as the second target, or four or more the cylindrical targets of can also being arranged are as the second target.That is, of the invention
It is not only applicable to the case where the second target is formed by the cylindrical target of even number root, but also is applied to the second target by the cylinder of odd number root
The case where shape target formation.
The system in the first film forming room SP1 and third film forming room SP3 without the specification framework of film forming is disclosed in Fig. 1
Manufacturing apparatus, but the present invention is not limited to the structures.For example, it is also possible to setting and the second film forming room in the first film forming room SP1
The same film formation device of SP2.Film formation device same as the 4th film forming room SP4 can also be set in third film forming room SP3.
For the sputtering equipment of Fig. 1, in six chambers (film forming inlet chamber ENT, the first film forming room SP1, the second film forming
Room SP2, third film forming room SP3, the 4th film forming room SP4 and film forming downstream chamber EXT) in, in order to which the inner space of connection is set as
Reduced atmosphere is configured with multiple exhaust apparatus (P31, P332, P331, P352).That is, between six chambers, such as
In adjacent film forming room not set gate valve, gate valve or differential valve etc. at all each other.It is able to achieve as a result, above-mentioned " multiple
Pallet (for example, pallet 400,410,420) is connected and the structure mobile to direction of travel ".
Third exhaust apparatus P31 is connected on the position that mainly inner space of film forming inlet chamber ENT is exhausted.
4th exhaust apparatus P332 is connected on the position that mainly inner space of the second film forming room SP2 is exhausted.5th row
Device of air P331 is connected on the position that mainly inner space of third film forming room SP3 is exhausted.6th exhaust apparatus
P352 is connected on the position that mainly inner space of film forming downstream chamber EXT is exhausted.
Wherein more importantly the 4th exhaust apparatus P332 and the 5th exhaust apparatus P331.4th exhaust apparatus P332 is main
It is exhausted to being configured with by the inner space of the second film forming room SP2 of a pair of of rotary target TG11, TG22 film formation device constituted,
Wherein, rotary target TG11, TG22 is used to form the first transparent conductive film 104 (TCO1).5th exhaust apparatus P331 is mainly right
The inner space of third film forming room SP3 in front of the inner space of the 4th film forming room SP4 is exhausted, wherein the 4th
Film forming room SP4 is configured with the film formation device being made of two couples of rotary targets TG41, TG42, and the rotary target TG41, TG42 are used to form
Second transparent conductive film 114 (TCO2).
The 4th exhaust apparatus P332 and the 5th exhaust apparatus P331 play function below as a result: that is, from being used to form the
The process gas that two process gas feedways G21, G22 of one transparent conductive film 104 (TCO1) are imported [is used to form hydrogen to contain
The gas of the first more transparent conductive film 104 (TCO1) of amount] will not be few to the hydrogen content for being located at subsequent handling second transparent lead
The film forming of electrolemma 114 (TCO2) affects.
It is affected with the film forming of the second transparent conductive film 114 (TCO2) that will not be few to the hydrogen content for being located at subsequent handling
The method of mode help function be above-mentioned " to pass through three pallets 400,410,420 of connection and carry out the first transparent conductive films
The structure of 104 (TCO1) and the spatter film forming of the second transparent conductive film 114 (TCO2) ".
In manufacturing equipment of the invention, multiple pallets (for example, pallet 400,410,420) are connected and to direction of travel
It is mobile, so that gap be not present between pallet, sputtering particle can be greatly reduced and reached by the gap between pallet
A possibility that non-film face (for example, in the case where front is film forming face, the back side is non-film face) of matrix 101.Equally, energy
It is enough that the process gas for sputtering is inhibited to move into.According to the invention it is thus possible to steadily carry out the second transparent conductive film 114
(TCO2) film forming, second transparent conductive film 114 are in latter made, the hydrogen for forming the first transparent conductive film 104 (TCO1)
Poor film.
In this way, by four film forming room (SP1 → SP2 → SP3 → SP4) following matrix 101 can be obtained: that is, the base
The face side [on the Si film (α) as light incident surface] of body 101 is formed with " the first transparent conductive film 104 more than hydrogen content
(TCO1) ", and in the back side of matrix 101 [on the Si film (β) as non-light incident surface] it is formed with few of hydrogen content
Two transparent conductive films 114 (TCO2).Pass through pallet by the matrix 101 in four film forming room (SP1 → SP2 → SP3 → SP4)
400 are moved into the place G being located in the inner space of film forming downstream chamber EXT.
It is mobile in the matrix 101 for being formed with the first transparent conductive film 104 (TCO1) and the second transparent conductive film 114 (TCO2)
To film forming downstream chamber EXT after (place G), carry out the 4th gate valve DV4 opening and closing operations, matrix 101 from film forming downstream chamber EXT to
Conveying room B is mobile.
After matrix 101 is moved to conveying room B (place H), carry out the 5th gate valve DV5 opening and closing operations, matrix 101 from
Conveying room B is mobile to room UL (place I) is taken out.Then, by by take out room UL inside pressure be set as atmospheric pressure after, into
The opening and closing operations of the 6th gate valve DV6 of row, to be formed with the first transparent conductive film 104 (TCO1) and the second transparent conductive film 114
(TCO2) matrix 101 is transported outside to sputtering equipment.
As described above, being imported into the second film forming room SP2 of leading portion in order to prevent in the sputtering equipment of Fig. 1
Hydrogen-containing gas in portion space is flowed out to the inner space for the 4th film forming room for being located at back segment, is devised saturating to being used to form first
The 4th exhaust apparatus P332 and the 5th exhaust apparatus P331 is arranged in a pair of of rotary target TG11, TG22 of bright conductive film 104 (TCO1)
Configuration.
In addition, the inside for importeding into the second film forming room SP2 positioned at leading portion in order to prevent is empty in the sputtering equipment of Fig. 1
Between in hydrogen-containing gas to be located at back segment the 4th film forming room inner space flow out, in the state of loading matrix 101
Mobile pallet 400 is also designed.That is, direction of travel of the pallet 400,410,420 in pallet for loading matrix 101
Upper connection, and pallet 400,410,420 can be moved in the state of connecting into and gap is not present between pallet.
The present invention realizes the technique that can substantially inhibit for sputtering by this design related with exhaust apparatus and pallet
Gas moves into the sputtering equipment of another surface side (for example, from face side to back side) from a surface side of matrix.
In addition, the sputtering equipment due to Fig. 1 is in-line arrangement sputtering equipment, have the advantage that is, can be with height
Productivity manufacture band transparent conductive film substrate (and solar battery), and the occupied space of equipment can be reduced.In addition, in array
In the case where formula sputtering equipment, it is suitble to manufacture uniform film under identical membrance casting condition.
On the other hand, using general one chip (piece leaf formula) manufacturing equipment, when one substrate of every processing,
The substrate (film forming metacoxal plate) for needing previously to have formed a film is fetched into mobile room (transfer chamber) from film forming room, and will be following
Substrate (substrate before forming a film) to be filmed is transported in film forming room from mobile room.In addition, it is necessary to after taking out film forming metacoxal plate,
By the indoor residual gas of removal film forming, so that substrate is transported to before then forming a film by clean state is set as in film forming room
In film forming room.However, in this case, since the residual component of residual gas is attached to the wall portion etc. of film forming room, thus can not
Residual component is completely removed from film forming room, residual component is possible to affect the characteristic of the film of subsequent film forming.In addition, In
When forming film on substrate, the operation of introducing technology gas is carried out in film forming room and stops the operation of introducing technology gas, and
Unlatching/the closing (ON/OFF) discharged.In this case, when one substrate of every processing, need to control water in basilar memebrane
Adsorbance is easy to cause difficulty in process.
On the other hand, using in-line arrangement sputtering equipment, matrix 101 is from room L is packed into towards taking-up room UL
Only while moved along forward direction, by the inner space of connection, thus on the Si film (α, β) on 101 two sides of matrix respectively
The first transparent conductive film 104 (TCO1) and the second transparent conductive film 114 (TCO2) are formed, therefore is being made with easily control water
For the Si film of basilar memebrane adsorbance the advantages of.In addition, making contributions since power supply is always set to open (ON) to film forming
Time is 100 [%], can be achieved at the same time high production rate and low operating cost.
In addition, for the sputtering equipment of Fig. 1, due to construct continuous enclosure space film forming room (SP1, SP2,
SP3, SP4) in, the first transparent conductive film 104 (TCO1) and second is formed a film respectively thoroughly to the Si film (α, β) on 101 two sides of matrix
Bright conductive film 114 (TCO2), therefore matrix 101 is not exposed in air atmosphere, can in the case where maintaining vacuum state,
First transparent conductive film 104 (TCO1) and the second transparent conductive film 114 are respectively formed to the Si film (α, β) on 101 two sides of matrix
(TCO2) (film forming at the positive back side is carried out under consistent vacuum state).
In the following, multiple process chambers of sputtering equipment to structural map 1 [are packed into room L, heating room H, film forming inlet chamber ENT, the
One film forming room SP1, the second film forming room SP2, third film forming room SP3, the 4th film forming room SP4, film forming downstream chamber EXT, conveying room B and
Take out room UL] in temperature of tray verified, and the verification result is illustrated.
Fig. 8 is the list for indicating the temperature of tray [DEG C] in 1~experimental example of experimental example 4, and in fig. 8, " Pos. " is work
The title of skill room, " time " is the time moving since pallet, for example, since " 240 " expression pallet " 240 moving
After second ".The number recorded in 1~4 column of experimental example is (to utilize tune of the configuration in each process chamber under the time (" time ")
Warm device is come after being heat-treated) temperature [DEG C] of pallet.
Fig. 9 is the chart for indicating the temperature of tray [DEG C] of Fig. 8.In Fig. 9, solid line indicates that experimental example 1, short dash line indicate real
Example 2 is tested, long dotted line indicates that experimental example 3, chain-dotted line indicate experimental example 4.
<experimental example 1>
Under the setting condition of experimental example 1, by gradually increasing temperature in being fitted into room L and heating room H, make four film forming
Room (SP1~SP4, especially SP3, SP4) has temperature peak.Therefore, it is released from tray surface to the inner space of film forming room
Water increase, it is possible to sputtering when process gas bring adverse effect.
<experimental example 2>
Under the setting condition of experimental example 2, with temperature peak and being heated in being fitted into room L, and
It is dehydrated from tray surface.In the process chamber for being located at back segment compared with being fitted into room L, monotone decreasing temperature of tray.As a result, at four
Low state of temperature compared with being capable of forming in film forming room (SP1~SP4) when with temperature peak, therefore can reduce putting for water
Out or bring into.
<experimental example 3>
Under the setting condition of experimental example 3, filled and being heated in being fitted into room L and heating room H from tray surface
Divide dehydration.Then, by being also provided with high temperature hold time in film forming inlet chamber ENT and four film forming room (SP1~SP4), from
And improve degasifying effect.
<experimental example 4>
It under the setting condition of experimental example 4, is only vacuum-evacuated to room L is packed into, and by being carried out in heating room H
It heats and is dehydrated from tray surface.Then, same as experimental example 3, by film forming inlet chamber ENT and four film forming room (SP1~
SP4 high temperature hold time is also provided in), to improve degasifying effect.Although temperature when being formed a film by the back side adjusts, temperature is slightly
Micro- rising, but since heat de-airing can be carried out in advance, the influence to discharge gas is slight.
Figure 10 is the figure (H for indicating the hydrogen content distribution of transparent conductive film2The case where O/Ar=0%).Figure 11 indicates transparent
Figure (the H of the hydrogen content distribution of conductive film2The case where O/Ar=6%).Figure 10 and Figure 11 is the result obtained by sims analysis.
Measuring instrument used in sims analysis is the SIMS6650 of Ai Fake (ア Le バ ッ Network Off ァ イ) manufacture.As measuring condition, one
Secondary ion type is Cs+, acceleration voltage 5kV.
In Figure 10 and Figure 11, horizontal axis is the depth of transparent conductive film (from the rearwardly direction digging of the front of transparent conductive film
Dig the time of transparent conductive film), the longitudinal axis on the left side indicates hydrogen content [atomicity/cm3], the longitudinal axis on the right indicates that secondary ion is strong
It spends (16O, 115In, 28Si).
The following is specified from Figure 10 and Figure 11.
The transparent conductive film of Figure 10 is equivalent to above-mentioned second transparent conductive film 114 (TCO2), hydrogen content 1020Rank
[atomicity/cm3]。
The transparent conductive film of Figure 11 is equivalent to above-mentioned first transparent conductive film 104 (TCO1), hydrogen content 1021Rank
[atomicity/cm3]。
Table 1 is representative when forming the first transparent conductive film 104 (TCO1) and the second transparent conductive film 114 (TCO2)
Membrance casting condition.In the project column of table 1, " preceding (Front) " refers to the first transparent conductive film 104 of the face side for being formed in matrix
(TCO1), " rear (Rear) " refers to the second transparent conductive film 114 (TCO2) of the back side for being formed in matrix.
[table 1]
| Project | Before | Afterwards |
| Cathode | Rotation | Rotation |
| Material | In2O3It is TCO | In2O3It is TCO |
| Power | 4.5kW | 4.3kW |
| Power density | 4.1kW/m | 3.9kW/m |
| Temperature | 90 | 90 |
| Film thickness | 100 | 100 |
| Voltage | 250 | 240 |
| Pressure | 0.7 | 0.7 |
| Ar | 250 | 250 |
| O2 | 5 | 6 |
| H2O | 3 | 0 |
| Water partial pressure | 4.60E-02 | 1.60E-02 |
| Intermediate pump | 2100L/s×1 | 2100L/s×1 |
| The importing position of water | Between the TG of left side | - |
| The introducing port of water | Towards left side TG | - |
| Gas analyser | Immediately below cathode | Nothing |
According to result above, it is of the invention with transparent conductive film substrate be the front and the back side that are disposed in matrix a-Si
Band transparent conductive film substrate, the band electrically conducting transparent made of the first transparent conductive film and the second transparent conductive film are separately equipped on film
Ilm substrate is formed as including that hydrogen content in first transparent conductive film is defined as CH1[atomicity/cm3], it will wrap
The hydrogen content being contained in second transparent conductive film is defined as CH2[atomicity/cm3] in the case where, meet CH1> CH2Pass
It is formula.At this point, the CH1It is 1021Rank, the CH2[atomicity/cm3] it is 1020Rank.
Under the conditions of " preceding " of table 1, pass through change " water (H2O)/Ar " ratio, evaluation are included in the first transparent conductive film
In hydrogen content CH1[atomicity/cm3], by this evaluation result is shown in table 2.
[table 2]
| H2O/Ar [%] | H2Content [atomicity/cm3] |
| 0 | 4.81E+20 |
| 0.3 | 2.15E+21 |
| 2 | 4.06E+21 |
| 6 | 7.03E+21 |
Four kinds of solar batteries that the structure of production as shown in Figure 3 is constituted.Four kinds of solar batteries are set as being set to base
The transparent conductive film [front side TCO (Front side TCO)] of the face side (light receiving side) of body and the back side for being set to matrix
Transparent conductive film [rear side TCO (Rear side TCO)] the different combination of hydrogen content.Structure in addition to this is identical.Table 3
Shown in 11~experimental example of experimental example 14 be four kinds of solar batteries.As the evaluation result of solar battery, evaluation filling because
Sub- FF and generating efficiency Eff.
[table 3]
| Experimental example | Front side TCO | Rear side TCO |
| 11 | There is water In2O3It is TCO | Anhydrous In2O3It is TCO |
| 12 | There is water In2O3It is TCO | There is water In2O3It is TCO |
| 13 | Anhydrous In2O3It is TCO | Anhydrous In2O3It is TCO |
| 14 | Anhydrous In2O3It is TCO | There is water In2O3It is TCO |
It is 1.019 the case where experimental example 11 if fill factor FF be normalized with the numerical value of experimental example 14, it is real
The case where the case where testing example 12 is 0.998, experimental example 13 is 1.007.
It is 1.044 the case where experimental example 11 if generating efficiency Eff be normalized with the numerical value of experimental example 14,
The case where the case where experimental example 12 is 1.032, experimental example 13 is 1.010.
From the above results, it can be seen that, the face side of matrix is being set as light incident surface, first electrically conducting transparent will be included in
Hydrogen content in film is defined as CH1[atomicity/cm3], it will include that hydrogen content in second transparent conductive film is defined as CH2
[atomicity/cm3] in the case where, meet CH1> CH2The solar battery (experimental example 11) of relational expression fill factor can be improved
(F.F.:Fill Factor) and generating efficiency (Eff).In addition, fill factor is " by peak power output (Pmax) divided by opening
Value after the product of road voltage (Voc) and short circuit current (Isc) ", generating efficiency are " open-circuit voltage (Voc), short-circuit current density
(Jsc) and the product of fill factor (F.F.) ".
More than, the invention made by the present inventor is illustrated based on embodiment, but the present invention and unlimited
Due to aforementioned embodiments, can make various changes certainly without departing from the scope of the subject in the invention.
Industrial availability
The present invention can be widely used in the manufacturing equipment with transparent conductive film substrate, the system with transparent conductive film substrate
It makes in method, band transparent conductive film substrate and solar battery.
Description of symbols
L is packed into room
H heats room
ENT film forming inlet chamber
The first film forming room of SP1
The second film forming room of SP2
SP3 third film forming room
The 4th film forming room of SP4
EXT film forming downstream chamber
B conveying room
UL takes out room
DV1, DV2, DV3, DV4, DV5, DV6 gate valve
The first process gas introducing mechanism of G21, G22 (the process gas feedway of the first transparent conductive film)
The second process gas introducing mechanism of G41, G42 (the process gas feedway of the second transparent conductive film)
H11, H12, H21, H22, H311, H312, H322, H332, H331, H341 register
P11, P21, P31, P331, P332, P352, P41, P52 exhaust apparatus
The rotary target (the first film formation device) of the first transparent conductive film of TG21, TG22
The rotary target (the second film formation device) of the second transparent conductive film of TG41, TG42
α, β Si film
101 matrixes
104 first transparent conductive films (TCO1)
114 second transparent conductive films (TCO2)
400 pallets
700 sputtering equipments
Claims (16)
1. a kind of manufacturing equipment with transparent conductive film substrate, including have third register and the first film formation device and second
The film forming room of film formation device, the third register are heat-treated the matrix in the state of being placed in pallet, and described
One film formation device and second film formation device are respectively formed the first transparent conductive film to the face side and back side of described matrix
And second transparent conductive film, wherein
The film forming is indoor, construction first film formation device and forms the first electrically conducting transparent to the face side of described matrix
Near first target of film, exist for supplying the gas leading-out portion of the first process gas introducing mechanism of the first hydrogeneous process gas
It is disposed on the moving direction of described matrix and first process gas is sprayed to the target positioned at left side in first target
On position,
The film forming is indoor, construction second film formation device and forms the second electrically conducting transparent to the back side of described matrix
Near second target of film, it is equipped with the gas export for supplying the second process gas introducing mechanism of the second not hydrogeneous process gas
Portion,
First target and second target configuration are in the film forming room, thus before described matrix is by first target
When face, first transparent conductive film is formed by face side of the sputtering method to the matrix, and described in passing through in described matrix
When before the second target, second transparent conductive film is formed by back side of the sputtering method to the matrix.
2. the manufacturing equipment according to claim 1 with transparent conductive film substrate, wherein
In the film forming room, it is configured in a manner of the inner space being connected between first target and second target
The more than one exhaust apparatus for having air entry.
3. the manufacturing equipment according to claim 1 with transparent conductive film substrate, wherein
The pallet has the opening portion of the front and back for exposing described matrix and supports the position of the side of the matrix,
In the film forming room, direction of travel arranged in a straight line arranging of multiple pallets along the pallet, and the spy in multiple pallets
Determine pallet have when by before first target and second target on the direction of travel of the particular pallet be located at
The position that the leading pallet of the front and back of the particular pallet and rear row pallet are overlapped respectively, from first target side or described
When the particular pallet is observed in two target sides, the particular pallet and leading pallet and rear row support positioned at the front and back of the particular pallet
Disk forms one group, and the manufacturing equipment has the side that particular pallet formation the same face is clipped with leading pallet and rear row pallet
Formula controls the device of the movement of each pallet.
4. the manufacturing equipment according to claim 1 with transparent conductive film substrate, wherein
The film forming it is indoor, positioned at described matrix by the position before before first target and second target
Inner space and be located across before each target and the inner space on the position that forms a film, each inner space configures
There is the more than one third register.
5. the manufacturing equipment according to claim 1 with transparent conductive film substrate, wherein
In the film forming room, the gas of the first process gas introducing mechanism for supplying the first hydrogeneous process gas
Leading-out portion is disposed on the position for spraying first process gas towards discharge space, and the discharge space generates described in the construction
First film formation device and to the face side of described matrix formed the first transparent conductive film the first target and mobile described matrix it
Between.
6. the manufacturing equipment according to claim 1 with transparent conductive film substrate, wherein
In the film forming room, it is equipped with flue in a manner of surrounding discharge space, the discharge space generates described in the construction
First film formation device and to the face side of described matrix formed the first transparent conductive film the first target and mobile described matrix it
Between.
7. the manufacturing equipment according to claim 5 with transparent conductive film substrate, wherein
In the film forming room, it is equipped with flue in a manner of surrounding discharge space, the discharge space generates described in the construction
First film formation device and to the face side of described matrix formed the first transparent conductive film the first target and mobile described matrix it
Between.
8. with the manufacturing equipment of transparent conductive film substrate described according to claim 1~any one of 7, wherein
Have loading room with the first register in the leading portion of the film forming room and with the heating room of the second register,
First register in reduced atmosphere to from air atmosphere import and in be placed in pallet state and front and
The matrix that the back side is equipped with a-Si is heat-treated, and second register is to the pallet and base come from loading room movement
Body is heat-treated,
Have conveying room in the back segment of the film forming room and take out room, the conveying room is to the pallet come from film forming room movement
It is cooled down with matrix, the room of taking out will export to atmosphere from reduced atmosphere from the conveying room mobile next pallet and matrix
In atmosphere.
9. a kind of manufacturing method with transparent conductive film substrate,
Using at least having, the band according to any one of claims 8 for being packed into room, heating room, film forming room, conveying room and taking-up room is transparent to be led
The manufacturing equipment of electrolemma substrate, it is described to form transparent conductive film on the Si film on the front and the back side for being disposed in matrix
Matrix is placed on pallet,
The maximum value of the heat treatment temperature being fitted into room is being defined as TL, by the heat treatment temperature in the heating room
Maximum value is defined as TH, the maximum value of the heat treatment temperature in the film forming room is defined as TSPIn the case where, meet TL≥TSP、
Or TH≥TSPRelational expression, wherein the TL, the THAnd the TSPUnit be DEG C.
10. the manufacturing method according to claim 9 with transparent conductive film substrate, wherein
In the inner space of the inner space for being fitted into room and the heating room, by being arranged respectively at described matrix just
The first register and the second register of surface side and back side is heat-treated described matrix.
11. the manufacturing method according to claim 9 with transparent conductive film substrate, wherein
The film forming it is indoor, positioned at described matrix by the position before before first target inner space and
Pass through in the inner space on the position to form a film before first target positioned at the matrix, by configuring in the matrix
The third register of non-film surface side is heat-treated the matrix.
12. the manufacturing method according to claim 9 with transparent conductive film substrate, wherein
The film forming it is indoor, positioned at described matrix by the position before before second target inner space and
Pass through in the inner space on the position to form a film before second target positioned at the matrix, by configuring in the matrix
The third register of non-film surface side is heat-treated the matrix.
13. a kind of band transparent conductive film substrate, by being separately equipped on the Si film in the front and the back side that are disposed in matrix
One transparent conductive film and the second transparent conductive film form, wherein
It will include that hydrogen content in first transparent conductive film is defined as CH1, second transparent conductive film will be included in
In hydrogen content be defined as CH2In the case where, meet CH1> CH2Relational expression, the CH1And CH2Unit be atomicity/cm3。
14. band transparent conductive film substrate according to claim 13, wherein
The CH1It is 1021Rank, and the CH2It is 1020Rank.
15. a kind of solar battery has by being separately equipped with first on the a-Si in the front and the back side that are disposed in matrix thoroughly
Band transparent conductive film substrate made of bright conductive film and the second transparent conductive film, wherein
The face side of described matrix is being set as light incident surface, will include the hydrogen content definition in first transparent conductive film
For CH1, will include that hydrogen content in second transparent conductive film is defined as CH2In the case where, meet CH1> CH2Relationship
Formula, the CH1And CH2Unit be atomicity/cm3。
16. solar battery according to claim 15, wherein
The CH1It is 1021Rank, and the CH2It is 1020Rank.
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| JP2018087205A JP7063709B2 (en) | 2018-04-27 | 2018-04-27 | Equipment for manufacturing substrates with transparent conductive film, manufacturing method for substrates with transparent conductive film |
| JP2018-087205 | 2018-04-27 |
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|---|---|
| CN110408896A true CN110408896A (en) | 2019-11-05 |
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Citations (6)
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|---|---|---|---|---|
| CN101978508A (en) * | 2008-03-19 | 2011-02-16 | 三洋电机株式会社 | Solar cell and method for manufacturing the same |
| CN102190156A (en) * | 2010-02-10 | 2011-09-21 | 佳能安内华股份有限公司 | Tray-type substrate conveying system, film formation method and manufacturing method of electronic device |
| CN102758189A (en) * | 2011-04-28 | 2012-10-31 | 日东电工株式会社 | Vacuum film formation method and laminate obtained by the method |
| CN103382545A (en) * | 2012-05-04 | 2013-11-06 | 株式会社半导体能源研究所 | Method for manufacturing light-emitting element and deposition apparatus |
| JP2016072523A (en) * | 2014-09-30 | 2016-05-09 | 株式会社カネカ | Crystal silicon solar cell, method of manufacturing the same, and solar cell module |
| WO2017170125A1 (en) * | 2016-03-29 | 2017-10-05 | 株式会社アルバック | Method for manufacturing substrates with transparent conductive film, apparatus for manufacturing substrates with transparent conductive film, substrate with transparent conductive film, and solar cell |
-
2018
- 2018-04-27 JP JP2018087205A patent/JP7063709B2/en active Active
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2019
- 2019-04-23 CN CN201910327419.0A patent/CN110408896A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101978508A (en) * | 2008-03-19 | 2011-02-16 | 三洋电机株式会社 | Solar cell and method for manufacturing the same |
| CN102190156A (en) * | 2010-02-10 | 2011-09-21 | 佳能安内华股份有限公司 | Tray-type substrate conveying system, film formation method and manufacturing method of electronic device |
| CN102758189A (en) * | 2011-04-28 | 2012-10-31 | 日东电工株式会社 | Vacuum film formation method and laminate obtained by the method |
| CN103382545A (en) * | 2012-05-04 | 2013-11-06 | 株式会社半导体能源研究所 | Method for manufacturing light-emitting element and deposition apparatus |
| JP2016072523A (en) * | 2014-09-30 | 2016-05-09 | 株式会社カネカ | Crystal silicon solar cell, method of manufacturing the same, and solar cell module |
| WO2017170125A1 (en) * | 2016-03-29 | 2017-10-05 | 株式会社アルバック | Method for manufacturing substrates with transparent conductive film, apparatus for manufacturing substrates with transparent conductive film, substrate with transparent conductive film, and solar cell |
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|---|---|
| JP2019189931A (en) | 2019-10-31 |
| JP7063709B2 (en) | 2022-05-09 |
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Application publication date: 20191105 |