CN110398848A - A kind of light shield, array substrate and preparation method thereof - Google Patents
A kind of light shield, array substrate and preparation method thereof Download PDFInfo
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- CN110398848A CN110398848A CN201910659215.7A CN201910659215A CN110398848A CN 110398848 A CN110398848 A CN 110398848A CN 201910659215 A CN201910659215 A CN 201910659215A CN 110398848 A CN110398848 A CN 110398848A
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- 239000000758 substrate Substances 0.000 title claims description 98
- 238000002360 preparation method Methods 0.000 title claims description 13
- 238000000034 method Methods 0.000 claims abstract description 32
- 238000012545 processing Methods 0.000 claims abstract description 14
- 238000004519 manufacturing process Methods 0.000 claims abstract description 9
- 239000011521 glass Substances 0.000 claims description 58
- 229920002120 photoresistant polymer Polymers 0.000 claims description 27
- 239000002184 metal Substances 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 238000013461 design Methods 0.000 claims description 6
- 238000011161 development Methods 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 4
- 230000010076 replication Effects 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 3
- 230000001737 promoting effect Effects 0.000 abstract description 3
- 239000000047 product Substances 0.000 description 19
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 1
- 230000001609 comparable effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/1303—Apparatus specially adapted to the manufacture of LCDs
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
- G02F1/136295—Materials; Compositions; Manufacture processes
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Optics & Photonics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Mathematical Physics (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
The present invention provides a kind of light shield, comprising: master pattern region includes the second sub- line pattern positioned at the first sub- line pattern of one end and positioned at opposite other end in the master pattern region;And outside the master pattern region: the first virtual circuit pattern is adjacent with the described first sub- line pattern;Second virtual circuit pattern is adjacent with the described second sub- line pattern;Wherein, the first virtual circuit pattern is identical as the length-width ratio of the described first sub- line pattern and area equation, and the second virtual circuit pattern is identical as the length-width ratio of the described second sub- line pattern and area equation;The utility model has the advantages that the present invention passes through in new product light shield manufacture, it is added by gate drive line pattern and carries out yellow light process with the virtual circuit pattern of density and shape, homogeneity of the gate drive in procedure for producing can be improved, reduce GOA processing procedure gate drive trench size difference, reaches the technical effect for promoting product quality.
Description
Technical field
The present invention relates to field of display technology more particularly to a kind of light shield, array substrate and preparation method thereof.
Background technique
In recent years, (Gate Driver on Array, Chinese abbreviation: gate drive is in array by industry liquid crystal display panel GOA
On substrate) it designs because liquid crystal display panel driving consumables cost can be reduced, it is widely used on liquid crystal large size panel, with liquid crystal surface
The increase of board size and the raising of resolution demand, the density and thickness of metallic circuit of the gate drive in array substrate processing procedure
Increase, gate drive homogeneity control difficulty in procedure for producing is caused to increase.
Because of the density and thickness of resultant metal route, is influenced by product processing procedure in glass substrate arrangement and GOA device exists
It is acted in manufacturing process by load difference, lock grade driving element the right and left trench size is caused difference occur, to influence to fill
The voltage swing for entering pixel causes product lock grade to drive difference, influences product quality, difference trend are as follows: 1. drives with product lock grade
The dynamic thicker difference of metallic circuit is bigger;2. bigger with the product lock grade driving bigger difference of density metal.Processing procedure can not solve at present
This difference.
In conclusion the array substrate of the prior art causes gate drive to exist since metallic circuit density and thickness increase
Homogeneity control difficulty increases in procedure for producing, causes lock grade driving element the right and left trench size difference occur, thus shadow
The voltage swing for being filled with pixel is rung, causes product lock grade to drive difference, influences product quality.Therefore, it is necessary to it provides a kind of novel
Light shield, array substrate and preparation method thereof improve this defect.
Summary of the invention
The embodiment of the present invention provides a kind of light shield, array substrate and preparation method thereof, for solving the prior art due to gold
Belong to line density and thickness increases, causes gate drive homogeneity control difficulty in procedure for producing to increase, lock grade is caused to drive
There is difference in device the right and left trench size, to influence the voltage swing for being filled with pixel, product lock grade is caused to drive difference,
The technical issues of influencing product quality.
The embodiment of the present invention provides a kind of light shield, comprising: master pattern region includes being located at one in the master pattern region
The first sub- line pattern at end, and the second sub- line pattern positioned at opposite other end;And
Outside the master pattern region:
First virtual circuit pattern is adjacent with the described first sub- line pattern;
Second virtual circuit pattern is adjacent with the described second sub- line pattern;
Wherein, the first virtual circuit pattern is identical as the length-width ratio of the described first sub- line pattern and area equation,
The second virtual circuit pattern is identical as the length-width ratio of the described second sub- line pattern and area equation.
According to one preferred embodiment of the present invention, the size of the size in the master pattern region and sub- glass substrate
It is identical.
According to one preferred embodiment of the present invention, the cabling of the first virtual circuit pattern and the described first sub- line pattern
Density and shape are all the same;The second virtual circuit pattern and the described second sub- line pattern walk line density and shape is homogeneous
Together.
The embodiment of the present invention provides a kind of method using above-mentioned light shield preparation array substrate, comprising steps of
S10 provides female glass substrate, and mother's glass substrate includes at least two rows of sub- glass substrates, the sub- glass base
Plate surface is formed with metal layer, and the layer on surface of metal is formed with photoresist layer;
S20, by the light shield be placed in any one row, any a piece of sub- glass substrate photoresist layer on, and make
The edge in the master pattern region of the light shield is aligned with sub- glass substrate edge described in this, and is blocked using baffle positioned at two
Arrange the virtual circuit pattern between the sub- glass substrate;
S30 is exposed processing the sub- glass substrate, forms photoresist design layer after development, described this later
Sub- glass substrate performs etching processing, forms metal pattern layer;
S40 repeats step S20 and S30, completes the yellow light process of the remaining sub- glass substrate.
According to one preferred embodiment of the present invention, in step s 30, the corresponding photoresist thickness of the sub- line pattern is monitored.
According to one preferred embodiment of the present invention, in step s 30, make photoresist thickness and the centre at the array substrate edge
Photoresist thickness reaches consistent.
According to one preferred embodiment of the present invention, in step s 40, the light shield is moved to down a piece of simultaneously with the baffle
The sub- glass substrate carries out yellow light process.
The embodiment of the present invention also provides a kind of using array substrate made of above-mentioned light shield, comprising: at least two groups are opposite to be set
The sub- glass substrate set;The sub- glass substrate includes at least two gate drive line modules, described two gate drive lines
Road module is located at the two sides of the sub- glass substrate;
Wherein, the edge of the array substrate is provided with and the one-to-one gate drive of gate drive line module
Line replica module.
According to one preferred embodiment of the present invention, the gate drive line replica module and the gate drive line module
Density, shape it is all the same.
According to one preferred embodiment of the present invention, the sub- glass substrate further includes data line, and the data line is for connecting
Described two gate drive line modules.
The utility model has the advantages that a kind of light shield provided in an embodiment of the present invention, array substrate and preparation method thereof, by new product
In light shield manufacture, it is added by light shield gate drive line pattern and is carried out with the gate drive wiring sample pattern of density and shape
Homogeneity of the gate drive in procedure for producing can be improved in yellow light process, reduces GOA processing procedure gate drive trench size difference,
Reach the technical effect for promoting product quality.
Detailed description of the invention
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for
For those skilled in the art, without creative efforts, it can also be obtained according to these attached drawings other attached
Figure.
Fig. 1 is the design structure diagram of light shield provided in an embodiment of the present invention;
Fig. 2 is the step exploded view of the production method of array substrate provided in an embodiment of the present invention;
Fig. 3 is the structure chart of array substrate provided in an embodiment of the present invention;
Fig. 4 is the structure chart for the array substrate that prior embodiment provides.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, those skilled in the art's every other implementation obtained without making creative work
Example, shall fall within the protection scope of the present invention.
The array substrate of the prior art causes gate drive in procedure for producing since metallic circuit density and thickness increase
Middle homogeneity control difficulty increases, and lock grade driving element the right and left trench size is caused difference occur, to influence to be filled with picture
The voltage swing of element causes product lock grade to drive difference, influences product quality, the present embodiment is able to solve the defect.
As shown in Figure 1, the design structure diagram of new light shield provided in an embodiment of the present invention, the light shield includes master pattern area
Domain 101 includes the first sub- line pattern 102 positioned at one end in the master pattern region 101, and positioned at opposite other end
Second sub- line pattern 103;And outside the master pattern region 101: the first virtual circuit pattern 104, with described
One sub- line pattern 102 is adjacent;Second virtual circuit pattern 105 is adjacent with the described second sub- line pattern 103;Wherein, described
First virtual circuit pattern 104 is identical as the length-width ratio of the described first sub- line pattern 102 and area equation, and described second is virtual
Line pattern 105 is identical as the length-width ratio of the described second sub- line pattern 103 and area equation.
Correspondingly, the size in the master pattern region 101 is identical as the size of sub- glass substrate;Described first
Virtual circuit pattern 104 and the described first sub- line pattern 102 walk line density and shape is all the same;Second virtual circuit
Pattern 105 and the described second sub- line pattern 103 walk line density and shape is all the same.
The embodiment of the present invention provides a kind of method using above-mentioned light shield preparation array substrate, comprising steps of
S10 provides female glass substrate, and mother's glass substrate includes at least two rows of sub- glass substrates, the sub- glass base
Plate surface is formed with metal layer, and the layer on surface of metal is formed with photoresist layer;
S20, by the light shield be placed in any one row, any a piece of sub- glass substrate photoresist layer on, and make
The edge in the master pattern region of the light shield is aligned with sub- glass substrate edge described in this, and is blocked using baffle positioned at two
Arrange the virtual circuit pattern between the sub- glass substrate;
S30 is exposed processing the sub- glass substrate, forms photoresist design layer after development, described this later
Sub- glass substrate performs etching processing, forms metal pattern layer;
S40 repeats step S20 and S30, completes the yellow light process of the remaining sub- glass substrate.
Correspondingly, in step s 30, monitoring the corresponding photoresist thickness of the sub- line pattern, making the array substrate side
The photoresist thickness of edge reaches consistent with intermediate photoresist thickness;In step s 40, the light shield and the baffle are moved to down simultaneously
The a piece of sub- glass substrate carries out yellow light process.
As shown in Fig. 2, the step exploded view of the production method of array substrate provided in an embodiment of the present invention, the first step, if
Count the embodiment of the present invention new light mask image, the new mask set include at least two gate drive line patterns, first
Gate drive line pattern 202, the second gate drive line pattern 203, described two gate drive line patterns are located at
The two sides in the new light shield master pattern region 201;Wherein, the edge of the new light shield is provided with and the gate drive line map
The one-to-one gate drive wiring sample pattern of case, the first gate drive wiring sample pattern 204, the second gate drive route
Sample pattern 205;The first gate drive wiring sample pattern 204 and the second gate drive wiring sample pattern
205 walk line density and shape with the first gate drive line pattern 202 and the second gate drive line pattern 203
Shape is all the same.
Second step is exposed processing procedure.Above-mentioned new light shield is placed in the photoresist of any one row, any a piece of sub- glass substrate
On layer, and the edge in the master pattern region of light shield is aligned with the sub- glass substrate edge, and block and be located at using baffle
Gate drive wiring sample pattern 206 between two rows of sub- glass substrates, to realize the edge load of the array substrate in
Between load comparable effect.
Third step monitors gate drive line pattern and the corresponding photoresist thickness of gate drive wiring sample pattern, makes
209 photoresist thickness reaches one among the photoresist thickness and the array substrate at the array substrate edge 207 and edge 208
It causes.
4th step etches processing procedure.The figure (by taking positivity photoresist as an example) of photoresist after exposure development is transferred under photoresist
The metallic diaphragm in face or nonmetallic film layer form for route, reach the consistent purpose of gate trench size.Generally there is dry ecthing
With two kinds of etching modes of wet etching.
As shown in figure 3, the structure chart of array substrate provided in an embodiment of the present invention, the array substrate uses above-mentioned light shield
It is made, comprising: the sub- glass substrate that at least two groups are oppositely arranged;The sub- glass substrate 301 includes at least two gate drives
Line module, the first gate drive line module 302, the second gate drive line module 303, described two gate drive routes
Module is located at the two sides of the sub- glass substrate;Wherein, the edge of the array substrate is provided with and the gate drive route
The one-to-one gate drive line replica module of module;The gate drive line replica module 304 and the gate drive
Density, the shape of line module 302 are all the same;The sub- glass substrate further includes data line 305, and the data line 305 is used for
Connect described two gate drive line modules.
In this preferred embodiment, the size of the array substrate is indefinite, can be two groups of sub- glass bases being oppositely arranged
Plate, every group of three pieces;It is also possible to multiple groups, every group there can also be multiple sub- glass substrates;It only need to be in the edge gate of array substrate
Gate drive line replica module is added by driver circuit module, so that the load at the array substrate edge 306 and edge 307
It is suitable with the load of centre 308, edge photoresist thickness and intermediate photoresist consistency of thickness, to realize that gate trench size is consistent
Purpose promotes product quality.
As shown in figure 4, the structure chart for the array substrate that prior embodiment provides, in this embodiment, the array
Substrate includes the sub- glass substrate that at least two groups are oppositely arranged;The sub- glass substrate 401 includes at least two gate drive lines
Road module, the first gate drive line module 402, the second gate drive line module 403, described two gate drive route moulds
Block is located at the two sides of the platelet;The sub- glass substrate 401 further includes data line 404, and the data line 404 is for connecting institute
State the first gate drive line module 402 and the second gate drive line module 403.
Wherein, the load at the edge 405 and edge 406 of the array substrate and the centre 407 of the array substrate
It loads inconsistent, lock grade driving element the right and left trench size is caused difference occur, so that the voltage for influencing to be filled with pixel is big
It is small, cause product lock grade to drive difference, influences product quality, and the embodiment of the present invention is by being arranged same density, stack pile
Gate drive line replica module, so that gate drive homogeneity in procedure for producing improves, the effective solution prior art
Defect.
In conclusion a kind of light shield provided in an embodiment of the present invention, array substrate and preparation method thereof, by new product
In light shield manufacture, it is added by light shield gate drive line pattern and is carried out with the gate drive wiring sample pattern of density and shape
Homogeneity of the gate drive in procedure for producing can be improved in exposure manufacture process, reduces GOA processing procedure gate drive trench size difference,
Reach the technical effect for promoting product quality, solve the array substrate of the prior art, since metallic circuit density and thickness increase
Greatly, cause gate drive homogeneity control difficulty in procedure for producing to increase, cause lock grade driving element the right and left channel big
It is small difference occur, to influence the voltage swing for being filled with pixel, causes product lock grade to drive difference, influence the technology of product quality
Problem.
It is provided for the embodiments of the invention a kind of light shield, array substrate and preparation method thereof above and has carried out detailed Jie
It continues.It should be understood that illustrative embodiments as described herein should be to be considered only as descriptive, it is used to help understand side of the invention
Method and its core concept, and be not intended to restrict the invention.
Claims (10)
1. a kind of light shield characterized by comprising
Master pattern region includes the first sub- line pattern positioned at one end in the master pattern region, and is located at relatively another
The second sub- line pattern at end;And
Outside the master pattern region:
First virtual circuit pattern is adjacent with the described first sub- line pattern;
Second virtual circuit pattern is adjacent with the described second sub- line pattern;
Wherein, the first virtual circuit pattern is identical as the length-width ratio of the described first sub- line pattern and area equation, described
Second virtual circuit pattern is identical as the length-width ratio of the described second sub- line pattern and area equation.
2. light shield as described in claim 1, which is characterized in that the size in the master pattern region and sub- glass substrate
Size is identical.
3. light shield as described in claim 1, which is characterized in that the first virtual circuit pattern and the described first sub- line map
Case walk line density and shape is all the same;The second virtual circuit pattern and the described second sub- line pattern walk line density and
Shape is all the same.
4. a kind of method using the described in any item light shields of claims 1 to 33 preparation array substrate, which is characterized in that including
Step:
S10 provides female glass substrate, and mother's glass substrate includes at least two rows of sub- glass substrates, the sub- glass substrate table
Face is formed with metal layer, and the layer on surface of metal is formed with photoresist layer;
S20, by the light shield be placed in any one row, any a piece of sub- glass substrate photoresist layer on, and make described
The edge in the master pattern region of light shield is aligned with sub- glass substrate edge described in this, and is blocked using baffle and be located at two rows of institutes
State the virtual circuit pattern between sub- glass substrate;
S30 is exposed processing the sub- glass substrate, forms photoresist design layer after development, later the sub- glass
Glass substrate performs etching processing, forms metal pattern layer;
S40 repeats step S20 and S30, completes the yellow light process of the remaining sub- glass substrate.
5. the method for preparation array substrate as claimed in claim 4, which is characterized in that in step s 30, monitor the sub-line
The corresponding photoresist thickness of road pattern.
6. the production method of array substrate as claimed in claim 4, which is characterized in that in step s 30, make the array base
The photoresist thickness of edges of boards edge reaches consistent with intermediate photoresist thickness.
7. the production method of array substrate as claimed in claim 4, which is characterized in that in step s 40, the light shield and institute
It states baffle while being moved to down a piece of sub- glass substrate and carry out yellow light process.
8. a kind of use array substrate made of the described in any item light shields of claims 1 to 33 characterized by comprising at least
Two groups of sub- glass substrates being oppositely arranged;The sub- glass substrate includes at least two gate drive line modules, described two
Gate drive line module is located at the two sides of the sub- glass substrate;
Wherein, the edge of the array substrate is provided with and the one-to-one gate drive route of the gate drive line module
Replication module.
9. array substrate as claimed in claim 8, which is characterized in that the gate drive line replica module and the gate
Density, the shape of driver circuit module are all the same.
10. array substrate as claimed in claim 8, which is characterized in that the sub- glass substrate further includes data line, the number
According to line for connecting described two gate drive line modules.
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CN201910659215.7A CN110398848A (en) | 2019-07-22 | 2019-07-22 | A kind of light shield, array substrate and preparation method thereof |
PCT/CN2019/099211 WO2021012311A1 (en) | 2019-07-22 | 2019-08-05 | Photomask, and array substrate and manufacturing method thereof |
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