CN110387577A - The heat shield component of pulling silicon single crystal device - Google Patents
The heat shield component of pulling silicon single crystal device Download PDFInfo
- Publication number
- CN110387577A CN110387577A CN201810360522.0A CN201810360522A CN110387577A CN 110387577 A CN110387577 A CN 110387577A CN 201810360522 A CN201810360522 A CN 201810360522A CN 110387577 A CN110387577 A CN 110387577A
- Authority
- CN
- China
- Prior art keywords
- single crystal
- silicon single
- wall
- bottom wall
- crystal rod
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
- C30B15/16—Heating of the melt or the crystallised materials by irradiation or electric discharge
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Abstract
The present invention provides a kind of temperature decline sharply of peripheral part for preventing the silicon single crystal rod from melted silicon lifting, and inhibits the heat shield component of the pulling silicon single crystal device of the generation of thermal stress in silicon single crystal rod.It is set in the indoor silica crucible of chamber and stores melted silicon, and be provided with the heat shield component with canister portion, cartridge is surrounded the outer peripheral surface of the silicon single crystal rod lifted from melted silicon and the surface interval of lower end and melted silicon and is located above.The lower part of canister portion is provided with protrusion, protrusion is made of following: cricoid bottom wall is connect and reached near the outer peripheral surface of silicon single crystal rod with the lower edge of canister portion；The longitudinal wall of tubular separates specified interval with the outer peripheral surface of silicon single crystal rod and connect setting with the inner edge of bottom wall；And upper wall, setting is connect with the upper limb of longitudinal wall and by with being formed upward and in a manner of diameter becomes larger, and upper limb is abutted with the inner peripheral surface of canister portion.Thermal storage member is filled in the inside of protrusion.
Description
Technical field
The present invention relates to a kind of heat shield components for being set to lifting and cultivating the device of silicon single crystal rod.
Background technique
In the past, it as this pulling silicon single crystal device, discloses following pulling apparatus: it is molten to accommodate storege silicon in chamber
The silica crucible of liquid, and inserted in a manner of surrounding silicon single crystal rod between the outer peripheral surface of silicon single crystal rod and the inner peripheral surface of silica crucible
Enter to have heat shield component (Japanese Patent Publication 57-40119).Heat shield component in the device has canister portion, cartridge packet
It encloses the outer peripheral surface of the silicon single crystal rod lifted and lower end and melted silicon surface interval and is located above and blocks and carry out self-heating
The radiant heat of device.
In the apparatus, if from melted silicon pulling single crystal silicon rod, the liquid level of melted silicon is gradually reduced and exposes quartzy earthenware
The internal perisporium of crucible, the outer peripheral surface of the radiant heat of the internal perisporium of the silica crucible from the exposing towards silicon single crystal rod.Heat shielding portion
Part prevents the outer peripheral surface of radiant heat from reaching silicon single crystal rod by blocking the radiant heat, to promote the silicon single crystal rod in lifting
Solidification, cools down silicon single crystal rod rapidly.
Also, as this heat shield component, the heat shield component that canister portion is formed as multilayered structure is disclosed, the multilayer knot
Structure includes: the base materials such as graphite of heat resistance in the temperature region with radiant heat；With the silicon single crystal rod side for coating the base material
Surface and radiance are less than the covering materials (Japanese Unexamined Patent Publication 8-325090) such as the quartz of radiance of base material.Thus configured
In heat shield component, due to by the big base material of thermal emissivity rate with thermal emissivity rate be less than the base material thermal emissivity rate covering material into
Row cladding, therefore can be improved the partition effect of the radiant heat to the crucible and heater of silicon single crystal rod.As a result, it is possible to pass through
Promote the cooling of silicon single crystal rod and increase pull rate, so as to improve the productivity of silicon single crystal rod.
Summary of the invention
But in the heat shield component in the single crystal pulling apparatus shown in Japanese Unexamined Patent Publication 8-325090 bulletin, from
Melted silicon lifting silicon single crystal rod in melted silicon near Temperature Distribution because the thermal discharge of the outer peripheral surface from silicon single crystal rod it is more,
Therefore it is drastically reduced with being gradually decreased towards outer peripheral surface in peripheral part in central part highest.On the other hand, it is contemplated that if
The heavy caliberization of silicon single crystal rod is in progress, then the temperature difference of the central part of above-mentioned silicon single crystal rod and peripheral part can become much larger.Therefore,
It is possible that generating the thermal stress based on above-mentioned temperature difference in silicon single crystal rod.
The purpose of the present invention is to provide it is a kind of can be by preventing the peripheral part of the silicon single crystal rod from melted silicon lifting
Sharply temperature decline come inhibit the thermal stress in silicon single crystal rod generation pulling silicon single crystal device heat shield component.
Invention involved in technical solution 1 is the improvement of heat shield component, as shown in Fig. 2, the heat shield component is arranged
In the device from the 12 pulling single crystal silicon rod 25 of melted silicon for being stored in silica crucible 13, and there is canister portion 37, cartridge 37
It surrounds the outer peripheral surface of silicon single crystal rod 25 and the surface interval of lower end and melted silicon 12 and is located above and blocks and carry out self-heating
The radiant heat of device 18.
Its structure with feature is, as shown in Figure 1, being provided with the protuberance of the direction in cylinder in the lower part of canister portion 37
Protrusion 41, protrusion 41 by constituting as follows: cricoid bottom wall 42 connect with the lower edge of canister portion 37 and reaches along horizontal extension
Near the outer peripheral surface of silicon single crystal rod 25；The longitudinal wall 44 of tubular, axis parallel relative to silicon single crystal rod 25 or with -30 degree with
Extend to upper and+30 degree angle tilts below and with the outer peripheral surface of silicon single crystal rod 25 separate specified interval and with bottom wall 42
Inner edge connection setting；And coniform upper wall 46, be formed as connecting setting with the upper limb of longitudinal wall 44 and with upward and straight
Diameter becomes larger, and upper limb is abutted with the inner peripheral surface of canister portion 37, encloses in lower part, bottom wall 42, longitudinal wall 44 and the upper wall 46 by canister portion 37
The inside of protrusion 41 firmly is filled with thermal storage member 47.
Invention involved in technical solution 2 is the improvement of heat shield component, as shown in Fig. 2, the heat shield component is arranged
In the device from the 12 pulling single crystal silicon rod 25 of melted silicon for being stored in silica crucible 13, and there is canister portion 37, cartridge 37
It surrounds the outer peripheral surface of silicon single crystal rod 25 and the surface interval of lower end and melted silicon 12 and is located above and blocks and carry out self-heating
The radiant heat of device 18.
Its structure with feature is, as can be seen from figures 8 and 9, the lower part of canister portion 37 is provided with the direction in cylinder
The protrusion 41 of protuberance, protrusion 41 by constituting as follows: coniform bottom wall 42 is formed as outer rim and connect with the lower edge of canister portion 37
And with respect to the horizontal plane with more than 0 degree and 80 degree of angle [alpha]s below or θ with downward or top and diameter is smaller, and
Inner edge reaches near the outer peripheral surface of silicon single crystal rod；The longitudinal wall 44 of tubular, axis parallel relative to silicon single crystal rod or with -30
Du or more and+30 degree angle tilts below extend and with the outer peripheral surface of silicon single crystal rod separate specified interval and with bottom wall 42
Inner edge connect setting；And coniform upper wall 46, be formed as connecting setting with the upper limb of longitudinal wall 44 and with upward and
Diameter becomes larger, and upper limb is abutted with the inner peripheral surface of canister portion 37, in lower part, bottom wall 42, longitudinal wall 44 and the upper wall 46 by canister portion 37
The inside of the protrusion 41 surrounded is filled with thermal storage member 47.
Invention involved in technical solution 3 is the improvement of heat shield component, as shown in Fig. 2, the heat shield component is arranged
In the device from the 12 pulling single crystal silicon rod 25 of melted silicon for being stored in silica crucible 13, and there is canister portion 37, cartridge 37
It surrounds the outer peripheral surface of silicon single crystal rod 25 and the surface interval of lower end and melted silicon 12 and is located above and blocks and carry out self-heating
The radiant heat of device 18.
Its structure with feature is, as shown in Figure 10, the lower part of canister portion 37 is provided with the direction in cylinder and swells
Protrusion 41, protrusion 41 by constituting as follows: exterior bottom wall 42a, be formed as outer rim connect with the lower edge of canister portion 37 and relative to
Horizontal plane with more than 0 degree and 80 degree of angle [alpha]s below with downward and diameter is smaller；Inner bottom wall 42b, be formed as outer rim with
The lower edge of exterior bottom wall 42a connects and with respect to the horizontal plane with more than 0 degree and 80 degree of angle, θs below are with upward and straight
Diameter is smaller, and inner edge reaches near the outer peripheral surface of silicon single crystal rod；The longitudinal wall 44 of tubular, the axial line relative to silicon single crystal rod are flat
Row ground or with -30 Dus or more and+30 extend with spending angle tilts below and with the outer peripheral surface of silicon single crystal rod separate it is specified between
Setting is connect every and with the inner edge of inner bottom wall 42b；And coniform upper wall 46, be formed as connecting with the upper limb of longitudinal wall 44 setting and
With upward and diameter becomes larger, and upper limb is abutted with the inner peripheral surface of canister portion 37, in the lower part by canister portion 37, exterior bottom wall
The inside for the protrusion 41 that 42a, inner bottom wall 42b, longitudinal wall 44 and upper wall 46 surround is filled with thermal storage member 47.
Silicon in the heat shield component in the pulling apparatus of existing monocrystalline silicon, from the silicon single crystal rod that melted silicon lifts
Temperature Distribution near melt is drastically reduced with gradually decreasing towards outer peripheral surface in peripheral part in central part highest.But
It is, in technical solution 1 to 3 in the heat shield component of documented pulling silicon single crystal device, the heat release from silicon single crystal rod 25
The temperature of the reflection of longitudinal wall 44 or protrusion 41 itself that are formed protrusion 41 passes through the heater 18 and melted silicon 12 of high temperature
And rise to which the heat release from silicon single crystal rod 25 is obtained inhibition, thus, it is possible to prevent the peripheral part of silicon single crystal rod 25 sharply
Temperature decline.As a result, the Temperature Distribution in silicon single crystal rod 25 becomes generally uniform from center towards outer peripheral surface, i.e. monocrystalline silicon
The radial distribution of vertical direction temperature gradient in stick 25 becomes generally uniform, therefore the heat being able to suppress in silicon single crystal rod 25 is answered
The generation of power.
In addition, what coniform upper wall 46 to flow down between the outer peripheral surface of silicon single crystal rod 25 and the inner peripheral surface of canister portion 37
Inert gas is swimmingly guided between melted silicon 12 and protrusion 41, and thermal storage member 47 will reach protrusion 41 from melted silicon 12
It radiates thermal regenerator and the temperature of the peripheral part of silicon single crystal rod 25 is effectively prevented to decline.
Invention involved in technical solution 4 is the heat shielding for the pulling silicon single crystal device invented involved in technical solution 1
The heat shield component of component, the pulling silicon single crystal device is formed as follows: being provided in the part that longitudinal wall 44 intersects with bottom wall 42
Coniform inside inclined wall 43, the coniform inside inclined wall 43 are formed as the lower surface relative to bottom wall 42 to be more than
0 degree and 80 degree of angle, θs below with upward and diameter is smaller, the diameter of monocrystal rod 25 is set as d, will be under longitudinal wall 44
The vertical range of the lower surface of edge and bottom wall 42 is set as L1When, inside inclined wall 43 becomes 0≤L1≤d/2。
In the heat shield component of the pulling silicon single crystal device described in the technical solution 4, especially from silicon single crystal rod 25
Heat release near solid liquid interface is reflected by inside inclined wall 43, can be prevented outer near the especially solid liquid interface of silicon single crystal rod 25
The temperature decline sharply of circumference.If the tiltangleθ of inside inclined wall 43 described in the technical solution 2 is more than 80 degree, inhibit
The effect decline declined from the temperature sharply of the peripheral part of the silicon single crystal rod 25 in the lifting of melted silicon 12.
Invention involved in technical solution 5 is the heat shielding for the pulling silicon single crystal device invented involved in technical solution 1 or 4
Component is covered, the heat shield component of the pulling silicon single crystal device is formed as follows: is arranged in canister portion 37 and the part that bottom wall 42 intersects
There is coniform outside inclined wall 45, the coniform outside inclined wall 45 is formed as the lower surface relative to bottom wall 42 with super
Cross 0 degree and 80 degree of angle [alpha]s below with downward and diameter is smaller, the diameter of monocrystal rod 25 is set as d, by canister portion 37
The vertical range of the lower surface of lower edge and bottom wall 42 is set as L2When, outside inclined wall 45 becomes 0≤L2≤d/2。
In the heat shield component of the pulling silicon single crystal device described in the technical solution 5, by outside inclined wall 45 receive Lai
The temperature of protrusion 41 itself rises from the heat release of melted silicon 12 or silica crucible 13, and thus, it is possible to prevent silicon single crystal rod 25
The temperature decline sharply of peripheral part near solid liquid interface.
Invention involved in technical solution 6 is the pulling silicon single crystal dress of invention involved in any one of technical solution 1 to 5
The heat shield component set, wherein when the diameter of monocrystal rod 25 is set as d, the height H of longitudinal wall 44 is 10mm or more and d/2 or less.
In the heat shield component of the pulling silicon single crystal device described in the technical solution 6, by from silicon single crystal rod 25
Heat release is synthermal with thermal storage member 47 1 by the reflection of longitudinal wall 44 and using the radiant heat from heater 18 and melted silicon 12
The longitudinal wall 44 of rising come prevent from melted silicon 12 lifting in silicon single crystal rod 25 peripheral part sharply temperature decline.If longitudinal wall
44 height H is less than 10mm, then exothermic reflex reduces, if more than d/2,41 enlargement of protrusion.
Invention involved in technical solution 7 is the pulling silicon single crystal dress of invention involved in any one of technical solution 1 to 6
The heat shield component set, wherein the outer peripheral surface of silicon single crystal rod 25 and the interval W of longitudinal wall 441For 10mm or more and 30mm or less.
In the heat shield component of the pulling silicon single crystal device described in the technical solution 7, longitudinal wall 44, which effectively reflects, to be come from
The heat release of silicon single crystal rod 25 and prevent silicon single crystal rod 25 peripheral part sharply temperature decline.If the outer peripheral surface of silicon single crystal rod 25
With the interval W of longitudinal wall 441Less than 10mm, it is likely that in lifting, silicon single crystal rod 25 is contacted with longitudinal wall 44 on the way, if more than 30mm,
The thermal discharge from silicon single crystal rod 25 then reflected by longitudinal wall 44 is reduced.
Invention involved in technical solution 8 is the pulling silicon single crystal dress of invention involved in any one of technical solution 1 to 7
The heat shield component set, wherein the outer diameter of the lower edge of canister portion 37 is set as D1, the internal diameter of silica crucible 13 is set as D2, by monocrystalline
When the diameter of stick 25 is set as d, there is 1.65d < D1< D2Relationship.
In the heat shield component of the pulling silicon single crystal device described in the technical solution 8, pass through the outer of the lower edge of canister portion 37
Diameter D1More than 1.65d, the temperature sharply risen by reflection heat release or temperature to prevent the peripheral part of silicon single crystal rod 25 can be formed
Spend enough protrusions 41 of decline.If outer diameter D1For 1.65d hereinafter, enough protrusions 41 are then unable to get, if D2With
On, then it can be contacted with silica crucible 13.
Invention involved in technical solution 9 is the pulling silicon single crystal dress of invention involved in any one of technical solution 1 to 8
The heat shield component set, wherein as shown in figure 4, canister portion 37 be formed as with downward and diameter is smaller.
In the heat shield component of the pulling silicon single crystal device described in the technical solution 9, be formed as with downward and
The lesser canister portion 37 of diameter draws the inert gas flowed down between the canister portion 37 and the outer peripheral surface of silicon single crystal rod 25 swimmingly
To between melted silicon 12 and protrusion 41.
Invention involved in technical solution 10 is the pulling silicon single crystal of invention involved in any one of technical solution 1 to 9
The heat shield component of device, wherein as shown in figure 5, canister portion 37 has inner cylinder member 37a, outer cylinder member 37b and is filled in inner cylinder
Heat-insulating material 37c between component 37a and outer cylinder member 37b.
In the heat shield component of the pulling silicon single crystal device described in the technical solution 10, effectively block from silica crucible
13 internal perisporium towards silicon single crystal rod 25 radiant heat, and promote to cross protrusion 41 and the solidification of silicon single crystal rod 25 that lifts.
Invention involved in technical solution 11 is the pulling silicon single crystal of invention involved in any one of technical solution 1 to 10
The heat shield component of device, wherein as shown in figure 3, outer peripheral edge is connect with canister portion 37 or outside inclined wall 45 and inner peripheral and vertical
1 or 2 or more cricoid heat transfer component 48 that wall 44 or inside inclined wall 43 connect is to cross the inside of protrusion 41
Mode is arranged.
In the heat shield component of the pulling silicon single crystal device described in the technical solution 11, will be heated by heater 18 or
The heat of the canister portion 37 or outside inclined wall 45 that are heated by the radiant heat of the internal perisporium from silica crucible 13, is passed by heat transfer component 48
It is delivered to longitudinal wall 44 or inside inclined wall 43 and increase the temperature of longitudinal wall 44 and inside inclined wall 43.Temperature rise longitudinal wall 44 or
Inside inclined wall 43 inhibit the heat release from silicon single crystal rod 25, thus prevent the peripheral part of silicon single crystal rod 25 sharply at a temperature of
Drop.As a result, the Temperature Distribution in silicon single crystal rod 25 becomes generally uniform from center towards outer peripheral surface, and in silicon single crystal rod 25
The radial distribution of vertical direction temperature gradient becomes generally uniform, therefore can effectively inhibit the thermal stress in silicon single crystal rod 25
Generation.
Invention effect
As noted above, according to the present invention, canister portion lower part be arranged in cylinder direction protuberance protrusion, by protrusion by
Following to constitute: cyclic annular or coniform bottom wall connect with the lower edge of canister portion and extends horizontally or obliquely and reach monocrystalline silicon
Near the outer peripheral surface of stick；The longitudinal wall of tubular separates specified interval with the outer peripheral surface of silicon single crystal rod and connect with the inner edge of bottom wall
Setting；And coniform upper wall, be formed as connecting with the upper limb of longitudinal wall setting and with upward and diameter becomes larger, and on
Edge is abutted with the inner peripheral surface of canister portion, in the inside of the protrusion surrounded by the lower part of canister portion, bottom wall, longitudinal wall and upper wall filled with storage
Thermal part, therefore, the heat release from silicon single crystal rod is formed the longitudinal wall reflection of protrusion or the temperature of protrusion itself passes through
The melted silicon of high temperature and rising is inhibited to the heat release from silicon single crystal rod, the urgency of the peripheral part of silicon single crystal rod can be prevented
Acute temperature decline.As a result, the Temperature Distribution in silicon single crystal rod becomes generally uniform from center towards outer peripheral surface, i.e. monocrystalline silicon
The radial distribution of the temperature gradient of vertical direction in stick becomes generally uniform.Therefore, the heat being able to suppress in silicon single crystal rod is answered
The generation of power, therefore sliding occurs or dislocation is improved.
Detailed description of the invention
Fig. 1 is the portion the A enlarged cross-sectional view for indicating Fig. 2 of heat shield component of pulling silicon single crystal device of the present invention.
Fig. 2 is the cross section structure figure of the pulling silicon single crystal device.
Fig. 3 is the cross-sectional view corresponding to Fig. 1 for indicating another embodiment of the present invention.
Fig. 4 be indicate canister portion be formed towards lower section and the cross-sectional view of the lesser heat shield component of diameter.
Fig. 5 is the cross-sectional view corresponding to Fig. 4 for indicating the heat shield component with the canister portion filled with heat-insulating material.
Fig. 6 is the correspondence for indicating not set outside inclined wall and inside inclined wall being formed as to bigger heat shield component
In the cross-sectional view of Fig. 4.
Fig. 7 is the correspondence for indicating not set inside inclined wall and outside inclined wall being formed as to bigger heat shield component
In the cross-sectional view of Fig. 4.
Fig. 8 is to indicate not set inside inclined wall and outside inclined wall and be formed as bottom wall with diameter downward
The cross-sectional view corresponding to Fig. 4 of small coniform heat shield component.
Fig. 9 is to indicate not set inside inclined wall and outside inclined wall and be formed as bottom wall with diameter upward
The cross-sectional view corresponding to Fig. 4 of small coniform heat shield component.
Figure 10 is the cross-sectional view corresponding to Fig. 4 for the heat shield component for indicating to have exterior bottom wall and inner bottom wall.
Figure 11 is the vertical direction temperature for indicating each portion of silicon single crystal rod of the G(from melted silicon surface until height 30mm
The average value of gradient) the silicon single crystal rod center of/Gc(from melted silicon surface until height 30mm vertical direction temperature gradient
Average value) relative to the distance from the center of silicon single crystal rod radially variation figure.
Specific embodiment
Then, the 1st embodiment of the invention is illustrated with reference to the accompanying drawings.
As shown in Fig. 2, being provided with the silica crucible of storage melted silicon 12 in the chamber 11 of the pulling apparatus 10 of monocrystalline silicon
13, the outer surface of the silica crucible 13 is coated by graphite base 14.The lower surface of silica crucible 13 is via above-mentioned graphite base 14
It is fixed on the upper end of fulcrum 16, the lower part of the fulcrum 16 is connect with crucible driving mechanism 17.Crucible driving mechanism 17, which has, not to be schemed
The 1st rotating motor for rotating silica crucible 13 shown and the lifting motor for going up and down silica crucible 13, pass through these horses
It reaches, silica crucible 13 can be rotated along specified direction, and can be moved along the vertical direction.The outer peripheral surface of silica crucible 13 with
Silica crucible 13 separates specified interval and is surrounded by heater 18, which surrounds.Heater 18 will
The policrystalline silicon body for putting into the high-purity of silica crucible 13 heats and melts and melted silicon 12 is made.
Also, cylindric shell 21 is connected in the upper end of chamber 11.The shell 21 is provided with shift mechanism 22.It mentions
Drawing mechanism 22 includes lifting head (not shown), and the upper end of shell 21 is set in a manner of it can turn round under horizontality；
2nd rotating motor (not shown) rotates this；From the beginning wirerope 23 hangs down towards the rotation center of silica crucible 13；And
Motor (not shown) is used in lifting, is set in above-mentioned head and batches or roll out wirerope 23.It is equipped in the lower end of wirerope 23
Seed crystal 24 for being impregnated in melted silicon 12 with pulling single crystal silicon rod 25.
In addition, connecting the silicon single crystal rod side supply inert gas of the oriented chamber 11 on chamber 11 and from the earthenware of chamber 11
Crucible inner peripheral surface side be discharged above-mentioned inert gas for exhaust gear 28.Supply pipe 29, one end and shell are included for exhaust gear 28
21 peripheral wall connects and the other end is connect with the gas tank (not shown) for storing above-mentioned inert gas；And discharge pipe 30, one end and chamber
The lower wall of room 11 connects and the other end is connect with vacuum pump (not shown).It is provided with adjustment in supply pipe 29 and flows through the lazy of pipe 29
Property gas flow the 1st flow rate regulating valve 31, be provided on discharge pipe 30 adjustment flow through pipe 30 inert gas flow
The 2nd flow rate regulating valve 32.
On the other hand, the output shaft (not shown) of lifting motor is provided with rotary encoder (not shown), in earthenware
Crucible driving mechanism 17 is provided with weight sensor (not shown) and the detection of the weight of the melted silicon 12 in detection silica crucible 13
The linear encoders (not shown) of the lifting position of fulcrum 16.Rotary encoder, weight sensor and linear encoders
Each detection output and the control of controller (not shown) input and connect, the control of controller export respectively with shift mechanism 22
The connection of the lifting motor of lifting motor and crucible driving mechanism.Also, memory (not shown) is provided in controller, it should
Store the length of batching of corresponding with the detection output of rotary encoder wirerope 23 in memory, i.e. silicon single crystal rod 25 mentions
Elongation degree stores the melted silicon detected in the corresponding silica crucible 13 of output with weight sensor as the 1st distribution map
12 liquid level is as the 2nd distribution map.Controller is configured to export control crucible driving machine according to the detection of weight sensor
The lifting motor of structure 17, so that the liquid level of the melted silicon 12 in silica crucible 13 remains certain level.
It is provided between the outer peripheral surface of silicon single crystal rod 25 and the inner peripheral surface of silica crucible 13 and surrounds the outer of silicon single crystal rod 25
The heat shield component 36 of circumferential surface.The heat shield component 36, which has, to be formed as cylindric and blocks the radiant heat from heater 18
Canister portion 37 and setting and general horizontal direction flange part 38 outstanding outward are connect with the upper limb of the canister portion 37.By will be above-mentioned
Flange part 38 is placed on heat-preservation cylinder 19, and heat shield component 36 is separated specified with the surface of the lower edge of canister portion 37 and melted silicon 12
Distance and the mode that is located above is fixed in chamber 11.Heat shield component 36 is by Mo(molybdenum), W(tungsten), C(carbon) formed or by
Surface is coated with the formation such as graphite of SiC.Canister portion 37 is the tubular body of same diameter or is formed as with downward and straight
The lesser tubular body of diameter, and formed as follows, that is, the outer diameter of the lower edge of canister portion 37 is set as D1, by the internal diameter of silica crucible 13
It is set as D2, when the diameter of silicon single crystal rod 25 is set as d, there is 1.65d < D1< D2Relationship.
Canister portion 37 shown in FIG. 1 is the cylindrical body of same diameter, and it is grand that the lower part of canister portion 37 is provided with the direction in cylinder
The protrusion 41 risen.The protrusion 41 by constituting as follows: cricoid bottom wall 42 is connect and along horizontal extension with the lower edge of canister portion 37
And it reaches near the outer peripheral surface of silicon single crystal rod 25；Longitudinal wall 44 connect setting with the inner edge of bottom wall 42；And coniform upper wall 46,
Be formed as connecting with the upper limb of the longitudinal wall 44 setting and with upward and diameter becomes larger.Intersect in longitudinal wall 44 with bottom wall 42
Part, which is provided with, to be formed as with the lesser inside inclined wall 43 of diameter upward, in the portion that canister portion 37 is intersected with bottom wall 42
Set up separately to be equipped with and be formed as with the lesser outside inclined wall 45 of diameter downward.Inside inclined wall 43 and outside inclined wall 45
The lower surface of bottom wall 42 is respectively relative to the angle within the scope of more than 0 degree and 80 degree angle, θ below, α, preferably 5~30 degree
Be formed as coniform.
In this embodiment, canister portion 37, outside inclined wall 45, bottom wall 42 and inside inclined wall 43 are formed as one.Separately
Outside, inside inclined wall 43 and outside inclined wall 45 are formed as follows: when the diameter of the monocrystal rod 25 lifted is set as d, longitudinal wall 44
Lower edge and bottom wall 42 lower surface vertical range L1, canister portion 37 lower edge and bottom wall 42 lower surface vertical range L2Point
It Cheng Wei not be more than 0 and d/2 hereinafter, and the outer peripheral surface of silicon single crystal rod 25 and the interval W of longitudinal wall 441As 10mm or more and 30mm with
Under.In this case, the width W of protrusion 412Preferably 50mm or more, the water of the inner edge of the inner surface and bottom wall 42 of longitudinal wall 44
Flat distance W3, canister portion 37 outer surface and bottom wall 42 outer rim horizontal distance W40mm is respectively become more than and less than W2Range
It is interior.In addition, interval W1Preferred value be 15~20mm.
Longitudinal wall 44 is formed as its height H as 10mm or more and 100mm is hereinafter, and be formed as relative to silicon single crystal rod 25
Axis parallel or extended with -30 Dus or more and+30 degree angle tilts below.- 30 degree indicate to protect relative to axial line
Hold 30 degree of angle and be formed as with upward and diameter becomes smaller ,+30 degree indicate to keep 30 degree of angle relative to axial line
Spend and be formed as with upward and diameter becomes larger, preferably with respect to silicon single crystal rod 25 axis parallel formed, i.e., it is vertical
Wall 44 is vertically formed.In addition, above-mentioned vertical range L1、L2, interval W1And height H can be according to the silicon single crystal rod 25 lifted
Diameter be suitably determined.Coniform upper wall 46 be formed as with upward and diameter becomes larger, and be configured to upper limb and cylinder
The inner peripheral surface in portion 37 abuts.In addition, the protrusion 41 surrounded in lower part, bottom wall 42, longitudinal wall 44 and the upper wall 46 by canister portion 37
Inside is filled with the felt material comprising carbon fiber as thermal storage member 47.Longitudinal wall 44 is formed as one with upper wall 46, by canister portion
After the space filling thermal storage member 47 that 37 lower part, outside inclined wall 25, bottom wall 42 and inside inclined wall 43 surrounds, spiral shell is utilized
Silk or pin etc. are fixed on inside inclined wall 43 and canister portion 37.
The movement of the pulling apparatus of thus configured monocrystalline silicon is illustrated.
In the heat shield component in the pulling apparatus of existing monocrystalline silicon, if from melted silicon 12 with specified pull rate
Pulling single crystal silicon rod 25, then the Temperature Distribution near the melted silicon 12 in the silicon single crystal rod 25 is because of the periphery from silicon single crystal rod 25
The thermal discharge in face is more, therefore drastically reduces with gradually decreasing towards outer peripheral surface in peripheral part in central part highest.
It is molten by the silicon from high temperature but in the heat shield component 36 of the pulling silicon single crystal device of present embodiment
The temperature of the radiant heat of liquid 12 and protrusion 41 rises, or by by protrusion 41 inside inclined wall 43 and longitudinal wall 44 it is anti-
The heat release from silicon single crystal rod 25 is penetrated, thus the heat release sharply from silicon single crystal rod 25 is inhibited.As a result, it is possible to prevent
The temperature decline sharply of the peripheral part of silicon single crystal rod 25.Therefore, the Temperature Distribution in silicon single crystal rod 25 is from center towards periphery
Face becomes generally uniform, i.e. the radial distribution of the temperature gradient of vertical direction in silicon single crystal rod 25 becomes generally uniform, therefore
It is able to suppress the generation of the thermal stress in silicon single crystal rod 25, sliding occurs or dislocation is improved.
Fig. 3 indicates the 2nd embodiment of the invention.In Fig. 3, appended drawing reference identical with Fig. 1 indicates same components.
In this embodiment, outer peripheral edge is connect and inner peripheral and longitudinal wall 44 or inside with canister portion 37 or outside inclined wall 45
2 cricoid heat transfer components 48 that inclined wall 43 connects are arranged in a manner of crossing the inside of protrusion 41.Heat transfer component 48 exists
It is installed on lower part by the canister portion 37 being formed as one, outside inclined wall when filling thermal storage member 47 together with the thermal storage member 47
45, the space that bottom wall 42 and inside inclined wall 43 surround.Then, the longitudinal wall 44 being integrated and upper wall 46 will be additionally formed and utilize spiral shell
Silk or pin etc. are fixed on inside inclined wall 43 and canister portion 37, and thus heat transfer component 48 is set in a manner of crossing the inside of protrusion 41
It sets.The outer peripheral edge of the heat transfer component 48 of such setting is connect with canister portion 37, the inner peripheral of heat transfer component 48 and longitudinal wall 44 or inside
Inclined wall 43 connects.
In the heat shield component 36 of thus configured pulling silicon single crystal device, will the heat caused by heater 18 or by
The canister portion 37 of the radiant heat heating of internal perisporium from silica crucible 13 or the heat of outside inclined wall 45, are transmitted by heat transfer component 48
Increase the temperature of longitudinal wall 44 and inside inclined wall 43 to longitudinal wall 44 or inside inclined wall 43.The longitudinal wall that temperature rises
44 or inside inclined wall 43 inhibit the heat release from silicon single crystal rod 25, to prevent the temperature sharply of the peripheral part of silicon single crystal rod 25
Degree decline.In addition, heat transfer component 48 is not limited to 2 of diagram, or 1 or 3 or 4.Also, each heat transfer
Every 1 thickness of component 48 is preferably added and subtracted according to set the piece number, preferably in the range of 6~9mm.It is other than the above
Movement is roughly the same with the movement of the 1st embodiment, therefore omits repeated explanation.
In addition, in the above-described embodiment, the canister portion 37 of heat shield component is formed as cylindric, but as shown in figure 4, cylinder
Portion 37 can also be formed as with downward and hollow circular cone shape that diameter becomes smaller, as shown in figure 5, canister portion 37 can have
The heat-insulating material 37c for having inner cylinder member 37a, outer cylinder member 37b and being filled between inner cylinder member 37a and outer cylinder member 37b.If
By canister portion 37 be formed as with downward and diameter is smaller, then can by the outer peripheral surface of the canister portion 37 and silicon single crystal rod 25 it
Between the inert gas that flows down swimmingly guide between melted silicon 12 and protrusion 41, as shown in figure 5, if by heat-insulating material 37c with
Dual structure is filled in canister portion 37, then can effectively block the radiation from the internal perisporium of silica crucible 13 towards silicon single crystal rod 25
Heat.
Also, inside inclined wall 43, In in the above-described embodiment, is provided in longitudinal wall 44 and the part that bottom wall 42 intersects
Canister portion 37 is provided with outside inclined wall 45 with the part that bottom wall 42 intersects, but as shown in fig. 6, can also be not provided with outside inclined wall
And the inclined wall 43 on the inside of the part that longitudinal wall 44 intersects with bottom wall 42 is only arranged, as shown in fig. 7, inside inclination can also be not provided with
Wall and on the outside of the part that canister portion 37 is intersected with bottom wall 42 is only arranged inclined wall 45.Also, inside inclined wall can also be not provided with
43 and 45 both sides of outside inclined wall and by outer rim connect with the lower edge of canister portion 37 and inner edge reach silicon single crystal rod outer peripheral surface near
Bottom wall 42 be set as coniform in itself, as a result, as shown in figure 8, bottom wall 42 can be formed as with respect to the horizontal plane more than 0 degree
And 80 degree of angle [alpha]s below are with keeping diameter smaller downward, or as shown in figure 9, can be formed as relative to level
Face is with more than 0 degree and 80 degree of angle, θs below with keeping diameter smaller upward.
In addition, bottom wall can also combine cone shape.That is, as shown in Figure 10, can also be formed into relative to level
Face is with more than 0 degree and 80 degree of angle [alpha]s below are with the outer rim of the lesser exterior bottom wall 42a of diameter and canister portion 37 downward
Lower edge connection, and be formed into respect to the horizontal plane with more than 0 degree and 80 degree of angle, θs below are with diameter upward
The outer rim that smaller and inner edge reaches the inner bottom wall 42b near the outer peripheral surface of silicon single crystal rod is connect with the lower edge of exterior bottom wall 42a.I.e.
Make for this heat shield component, the longitudinal wall 44 that the heat release from silicon single crystal rod 25 can also be formed protrusion 41 reflects, Huo Zhelong
The temperature for playing portion 41 itself is risen by the heater 18 and melted silicon 12 of high temperature to the heat release from silicon single crystal rod 25
It can be inhibited, the temperature decline sharply of the peripheral part of silicon single crystal rod 25 can be prevented.
Embodiment
Then, the embodiment of the present invention is described in detail together with comparative example.
1 > of < embodiment
The internal diameter of the canister portion 37 of the heat shield component 36 of pulling silicon single crystal device as shown in Figures 1 and 2 and height are set respectively
For 410mm and 420mm, it is provided in the lower part of canister portion 37 by outside inclined wall 45, bottom wall 42, inside inclined wall 43, longitudinal wall 44
And the protrusion 41 that upper wall 46 is constituted.Longitudinal wall 44 is set as the cylindrical body that inclination angle is 0 degree, by the internal diameter of longitudinal wall 44 and height point
It is not set as 250mm and 40mm.The bottom diameter of inside inclined wall 43, tiltangleθ and vertical range L are set to 330mm, 45
Degree and 40mm, are set to 45 degree and 40mm for the inclined angle alpha of outside inclined wall 45 and vertical range L.Also, by bottom wall 42
Lower surface and the interval of melted silicon 12 are set as 35mm, by the interval W of longitudinal wall 44 and silicon single crystal rod 251It is set as 20mm.In addition, 37,
45, it 42,43,44 and 46 is all formed by carbon.The heat shield component of thus configured pulling apparatus is set as embodiment 1.
2 > of < embodiment
As shown in figure 3, outer peripheral edge is connect respectively with canister portion 37 and outside inclined wall 45 and inner peripheral is tilted with longitudinal wall 44 and inside
2 cricoid heat transfer components 48 that wall 43 connects are arranged in a manner of crossing the inside of protrusion 41, in addition to this, by heat shielding
Component is constituted identically as above-described embodiment 1.The heat shield component of the pulling apparatus is set as embodiment 2.
1 > of < comparative example
Although not shown, but in the not set protrusion 41 in the lower part of canister portion 37, in addition to this, by pulling apparatus and above-described embodiment 1
It constitutes in the same manner.The pulling apparatus is set as comparative example 1.
< comparative test and evaluation >
In each pulling apparatus of embodiment 1, embodiment 2 and comparative example 1, calculated using the simulation of heat conduction analysis program by diameter
The Temperature Distribution in silicon single crystal rod when the silicon single crystal rod lifting 400mm of 210mm, and compare.It finds out from melted silicon table
Face rise the average value G of the vertical direction temperature gradient in each portion of silicon single crystal rod until height 30mm and from melted silicon surface to
The average value Gc of the vertical direction temperature gradient at the silicon single crystal rod center until height 30mm, and G/Gc has been found out relative to from list
The variation of the distance of the center of crystalline silicon rod radially.It the results are shown in Figure 11.
It is clear that according to Figure 11, in embodiment 1 and embodiment 2, compared with comparative example 1, the value of G/Gc is in silicon periphery
Face does not also steeply rise, and close to level, i.e. the radial distribution of vertical direction temperature gradient becomes generally uniform.This be because
For in embodiment 1 and embodiment 2, the temperature of protrusion 41 rises and the radiant heat from melted silicon, thus from single
The heat release sharply of crystalline silicon rod is inhibited by protrusion 41, can prevent the temperature sharply of the peripheral part of silicon single crystal rod 25
Decline.Also, compared with Example 1, the radial distribution of the vertical direction temperature gradient of embodiment 2 becomes more evenly.Think this
It is because reaching the radiant heat of canister portion 37 or outside inclined wall 45 in heat transfer part from the internal perisporium of heater 18 or silica crucible 13
It is conducted in part 48 and increase the temperature of longitudinal wall 44 or inside inclined wall 43, so that the heat release from silicon single crystal rod 25 further obtains
To inhibition.
If also, the part that longitudinal wall and bottom wall intersect setting be formed as with upward and diameter is lesser coniform
Inside inclined wall, then the heat release near the especially solid liquid interface from silicon single crystal rod is reflected by inside inclined wall, can be prevented
The temperature decline sharply of peripheral part near the especially solid liquid interface of silicon single crystal rod, if being set in canister portion and the part that bottom wall intersects
It sets and is formed as then receiving to melt from silicon by outside inclined wall with the lesser coniform outside inclined wall of diameter downward
The heat release of liquid or silica crucible can make the temperature of protrusion itself further up.
In addition, if the interval of the outer peripheral surface of silicon single crystal rod and longitudinal wall is set as 10mm or more and 30mm hereinafter, if longitudinal wall not
It can be contacted with silicon single crystal rod and can effectively reflect the heat release from silicon single crystal rod.If outer peripheral edge and canister portion or outside are tilted
1 or 2 or more the cricoid heat transfer component that wall connection and inner peripheral are connect with longitudinal wall or inside inclined wall is to cross protuberance
The mode of the inside in portion is arranged, then can by the canister portion heated from the radiant heat of heater or the internal perisporium of silica crucible or
The heat of outside inclined wall is transmitted to longitudinal wall or inside inclined wall by heat transfer component and keeps the temperature of longitudinal wall and inside inclined wall effective
Ground rises, so as to further suppress the heat release from silicon single crystal rod.As a result, from the silicon single crystal rod in melted silicon lifting
The temperature decline sharply of peripheral part is inhibited by comparing the protrusion of high temperature, therefore can effectively inhibit silicon single crystal rod
In thermal stress generation.
Description of symbols
10- pulling silicon single crystal device, 12- melted silicon, 13- silica crucible, 18- heater, 25- silicon single crystal rod, 36- heat shielding portion
Part, 37- canister portion, 37a- inner cylinder member, 37b- outer cylinder member, 37c- heat-insulating material, 41- protrusion, 42- bottom wall, 42a- outer bottom
Wall, 42b- inner bottom wall, inclined wall on the inside of 43-, 44- longitudinal wall, inclined wall on the outside of 45-, 46- upper wall, 47- thermal storage member, 48- heat transfer
Component, θ-angle of the inside inclined wall relative to the lower surface of bottom wall, α-angle of the outside inclined wall relative to the lower surface of bottom wall
Degree, L1The vertical range of the lower surface of the lower edge and bottom wall of longitudinal wall, L2The lower surface of the lower edge and bottom wall of canister portion it is vertical away from
From, the height of H- longitudinal wall, W1The outer peripheral surface of silicon single crystal rod and the interval of longitudinal wall, the diameter of d- silicon single crystal rod, D1Canister portion lower edge
Outer diameter, D2The internal diameter of silica crucible.
Claims (11)
1. a kind of heat shield component of pulling silicon single crystal device is set to from the melted silicon (12) for being stored in silica crucible (13)
The device of pulling single crystal silicon rod (25), and there are canister portion (37), cartridge (37) surrounds the outer of the silicon single crystal rod (25)
The surface interval of circumferential surface and lower end and the melted silicon (12) and be located above and block the radiation from heater (18)
Heat,
The heat shield component is characterized in that,
The lower part of cartridge (37) is provided with the protrusion (41) of the protuberance of the direction in cylinder,
The protrusion (41) by constituting as follows:
Cricoid bottom wall (42), connect with the lower edge of canister portion (37) and reaches the outer peripheral surface of silicon single crystal rod (25) along horizontal extension
Near；
The longitudinal wall (44) of tubular, axis parallel relative to the silicon single crystal rod (25) or with -30 Dus or more and+30 degree with
Under angle tilt extend and separate specified interval with the outer peripheral surface of the silicon single crystal rod (25) and with the bottom wall (42)
Inner edge connect setting；And
Coniform upper wall (46), connect with the upper limb of the longitudinal wall (44) setting and with upward and what diameter became larger
Mode is formed, and upper limb is abutted with the inner peripheral surface of cartridge (37),
In the protrusion (41) that the lower part by cartridge (37), the bottom wall (42), longitudinal wall (44) and upper wall surround
Inside is filled with thermal storage member (47).
2. a kind of heat shield component of pulling silicon single crystal device is set to from the melted silicon (12) for being stored in silica crucible (13)
The device of pulling single crystal silicon rod (25), and there are canister portion (37), cartridge (37) surrounds the outer of the silicon single crystal rod (25)
The surface interval of circumferential surface and lower end and the melted silicon (12) and be located above and block the radiation from heater (18)
Heat,
The heat shield component is characterized in that,
The lower part of cartridge (37) is provided with the protrusion (41) of the protuberance of the direction in cylinder,
The protrusion (41) is made of following；
Coniform bottom wall (42), be formed as outer rim connect with the lower edge of canister portion (37) and with respect to the horizontal plane with more than 0 degree and
80 degree of angles (α or θ) below with downward or top and diameter is smaller, and inner edge reaches the outer of silicon single crystal rod (25)
Near circumferential surface；
The longitudinal wall (44) of tubular, axis parallel relative to the silicon single crystal rod (25) or with -30 Dus or more and+30 degree with
Under angle tilt extend and separate specified interval with the outer peripheral surface of the silicon single crystal rod (25) and with the bottom wall (42)
Inner edge connect setting；And
Coniform upper wall (46) is formed as connecting setting with the upper limb of the longitudinal wall (44) and with diameter change upward
Greatly, and upper limb is abutted with the inner peripheral surface of cartridge (37),
In the protrusion (41) that the lower part by cartridge (37), the bottom wall (42), longitudinal wall (44) and upper wall surround
Inside is filled with thermal storage member (47).
3. a kind of heat shield component of pulling silicon single crystal device is set to from the melted silicon (12) for being stored in silica crucible (13)
The device of pulling single crystal silicon rod (25), and there are canister portion (37), cartridge (37) surrounds the outer of the silicon single crystal rod (25)
The surface interval of circumferential surface and lower end and the melted silicon (12) and be located above and block the radiation from heater (18)
Heat,
The heat shield component is characterized in that,
The lower part of cartridge (37) is provided with the protrusion (41) of the protuberance of the direction in cylinder,
The protrusion (41) by constituting as follows:
Exterior bottom wall (42a), be formed as outer rim connect with the lower edge of canister portion (37) and with respect to the horizontal plane with more than 0 degree and 80 degree with
Under angle (α) with downward and diameter is smaller；
Inner bottom wall (42b), outer rim connect with the lower edge of the exterior bottom wall (42a) and with respect to the horizontal plane more than 0 degree and 80 degree
Angle (θ) below with upward and diameter is smaller, and inner edge reach silicon single crystal rod (25) outer peripheral surface near；
The longitudinal wall (44) of tubular, axis parallel relative to the silicon single crystal rod (25) or with -30 Dus or more and+30 degree with
Under angle tilt extend and separate specified interval with the outer peripheral surface of the silicon single crystal rod (25) and with the inner bottom wall
The inner edge of (42b) connects setting；And
Coniform upper wall (46) is formed as connecting setting with the upper limb of the longitudinal wall (44) and with diameter change upward
Greatly, and upper limb is abutted with the inner peripheral surface of cartridge (37),
In the institute that the lower part by cartridge (37), the exterior bottom wall (42a), inner bottom wall (42b), longitudinal wall (44) and upper wall surround
The inside of protrusion (41) is stated filled with thermal storage member (47).
4. the heat shield component of pulling silicon single crystal device according to claim 1, the heat shielding of the pulling silicon single crystal device
Component is covered to be formed as follows:
Longitudinal wall (44) and the part that bottom wall (42) intersects are provided with coniform inside inclined wall (43), it is described coniform interior
Roll skew wall (43) be formed as the lower surface relative to the bottom wall (42) with more than 0 degree and 80 degree angle (θ) below with
Upward and diameter is smaller, the diameter of monocrystal rod (25) is set as d, by the lower edge of the longitudinal wall (44) and the bottom wall (42)
The vertical range of lower surface be set as L1When, the inside inclined wall (43) becomes 0≤L1≤d/2。
5. the heat shield component of pulling silicon single crystal device according to claim 1 or 4, the heat of the pulling silicon single crystal device
Shield member is formed as follows:
Canister portion (37) and the part that bottom wall (42) intersects are provided with coniform outside inclined wall (45), it is described coniform outer
Roll skew wall (45) be formed as the lower surface relative to the bottom wall (42) with more than 0 degree and 80 degree angle (α) below with
Downward and diameter is smaller, the diameter of monocrystal rod (25) is set as d, by the lower edge of cartridge (37) and the bottom wall (42)
The vertical range of lower surface be set as L2When, the outside inclined wall (45) becomes 0≤L2≤d/2。
6. the heat shield component of pulling silicon single crystal device according to any one of claim 1 to 5, wherein
When the diameter of monocrystal rod (25) is set as d, the height H of longitudinal wall (44) is 10mm or more and d/2 or less.
7. the heat shield component of pulling silicon single crystal device according to any one of claim 1 to 6, wherein
The outer peripheral surface of silicon single crystal rod (25) and the interval (W of longitudinal wall1) it is 10mm or more and 30mm or less.
8. the heat shield component of pulling silicon single crystal device according to any one of claim 1 to 7, wherein
The outer diameter of the lower edge of canister portion (37) is set as D1, the internal diameter of silica crucible (13) is set as D2, by the diameter of monocrystal rod (25)
When being set as d, there is 1.65d < D1< D2Relationship.
9. the heat shield component of pulling silicon single crystal device according to any one of claim 1 to 8, wherein
Canister portion (37) be formed as with downward and diameter is smaller.
10. the heat shield component of pulling silicon single crystal device according to any one of claim 1 to 9, wherein
Canister portion (37) has inner cylinder member (37a), outer cylinder member (37b) and is filled in the inner cylinder member (37a) and described outer
Heat-insulating material (37c) between cartridge unit (37b).
11. the heat shield component of pulling silicon single crystal device according to any one of claim 1 to 10, wherein
Outer peripheral edge is connect with canister portion (37) or outside inclined wall (45) and inner peripheral connects with longitudinal wall (44) or inside inclined wall (43)
1 connect or 2 or more cricoid heat transfer component (48) is arranged in a manner of crossing the inside of protrusion (41).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810360522.0A CN110387577A (en) | 2018-04-20 | 2018-04-20 | The heat shield component of pulling silicon single crystal device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810360522.0A CN110387577A (en) | 2018-04-20 | 2018-04-20 | The heat shield component of pulling silicon single crystal device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110387577A true CN110387577A (en) | 2019-10-29 |
Family
ID=68283213
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810360522.0A Pending CN110387577A (en) | 2018-04-20 | 2018-04-20 | The heat shield component of pulling silicon single crystal device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110387577A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020156213A1 (en) * | 2019-02-01 | 2020-08-06 | 上海新昇半导体科技有限公司 | Semiconductor crystal growth device |
| CN111876823A (en) * | 2020-08-10 | 2020-11-03 | 西安奕斯伟硅片技术有限公司 | Combined sleeve of single crystal furnace and single crystal furnace |
| US11932961B2 (en) | 2020-08-10 | 2024-03-19 | Xian Eswin Material Technology Co., Ltd. | Assembly sleeve of single crystal pulling apparatus, and single crystal pulling apparatus |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000247776A (en) * | 1999-02-26 | 2000-09-12 | Mitsubishi Materials Silicon Corp | Heat-shielding member in pulling apparatus of silicon single crystal |
-
2018
- 2018-04-20 CN CN201810360522.0A patent/CN110387577A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000247776A (en) * | 1999-02-26 | 2000-09-12 | Mitsubishi Materials Silicon Corp | Heat-shielding member in pulling apparatus of silicon single crystal |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020156213A1 (en) * | 2019-02-01 | 2020-08-06 | 上海新昇半导体科技有限公司 | Semiconductor crystal growth device |
| CN111876823A (en) * | 2020-08-10 | 2020-11-03 | 西安奕斯伟硅片技术有限公司 | Combined sleeve of single crystal furnace and single crystal furnace |
| US11932961B2 (en) | 2020-08-10 | 2024-03-19 | Xian Eswin Material Technology Co., Ltd. | Assembly sleeve of single crystal pulling apparatus, and single crystal pulling apparatus |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110387577A (en) | The heat shield component of pulling silicon single crystal device | |
| TW482831B (en) | Single crystal production apparatus and production of single crystal | |
| JP3709494B2 (en) | Heat shielding member of silicon single crystal pulling device | |
| US20100126407A1 (en) | Silica glass crucible and method for pulling single-crystal silicon | |
| JP6844560B2 (en) | Silicon melt convection pattern control method, silicon single crystal manufacturing method, and silicon single crystal pulling device | |
| JP6760128B2 (en) | Silicon single crystal manufacturing method, rectifying member, and single crystal pulling device | |
| CN105980614B (en) | Single-crystal growing apparatus | |
| CN103352247B (en) | A kind of adjustable insulation construction of axial-temperature gradient being applied to kyropoulos Sapphire Crystal Growth | |
| US6379460B1 (en) | Thermal shield device and crystal-pulling apparatus using the same | |
| JP2004352581A (en) | Heat shielding member of silicon single crystal pulling device | |
| JP2007182355A (en) | Heat shielding member of silicon single crystal pulling apparatus | |
| JP3428625B2 (en) | Apparatus and method for pulling silicon single crystal | |
| JP3428626B2 (en) | Apparatus and method for pulling silicon single crystal | |
| JP3587231B2 (en) | Silicon single crystal pulling device | |
| JP4345276B2 (en) | Pulling-up method of magnetic field applied silicon single crystal | |
| KR100358029B1 (en) | Thermal shield device and crystal-pulling apparatus using the same | |
| JP6471700B2 (en) | Method for melting silicon raw material using recharge device | |
| JP3719332B2 (en) | Silicon single crystal pulling device | |
| KR102138455B1 (en) | A heat shield member for single crystal growth and single crystal growth apparatus using the same | |
| US11186921B2 (en) | Method for controlling convection pattern of silicon melt and method for producing monocrystalline silicon | |
| JP2009269802A (en) | Method and apparatus for manufacturing single crystal | |
| JP3719329B2 (en) | Silicon single crystal pulling device | |
| JP4221797B2 (en) | Melting method of polycrystalline silicon before silicon single crystal growth | |
| JP3642174B2 (en) | Silicon single crystal pulling apparatus and pulling method thereof | |
| JP5040848B2 (en) | Silicon single crystal manufacturing equipment |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20191029 |