經濟部智慧財產局員工消費合作社印製 573082 A7 B7 五、發明說明（1 ) 、本發明僳關於一種設在結晶提拉裝置中（又稱為拉晶 機）中用以從熔體提拉及長成矽單結晶晶錠之熱遮蔽構件 ,及使用該種熱遮蔽構件之拉晶機。 迄今有多種用以提拉矽單結晶晶錠之裝置已掲述於多 項文獻中。其中包括日本審核特許請願案第57-40119(1982) 號所掲示之拉晶機，係由具有用以保存矽熔體之石英坩堝 之容器，及設在矽單結晶晶錠之外表面與石英坩堝之内表 面之間之熱遮蔽構件所構成，晶錠係被封閉在熱遮蔽構件 内。換言之，該熱遮蔽構件具有圍繞著矽單結晶晶錠周面 並設在矽熔髏上方保持一特定間距之處之管體，藉以防止 熱能從加熱器中向外輻射。當矽結晶逐漸從矽熔體中提拉 出來時，矽熔髏之液面水平將逐漸降低，於是石英坩堝之 ' 内周壁將會曝現。從曝現之石英坩堝之内周面發出之熱輻 射將傳遞至矽單結晶晶錠之外周面。因此，熱封構件將阻 遏該輻射作用以防止熱輻射延伸至矽單結晶晶錠之外周面 ，於是矽單結晶晶錠可快速冷卻而加速提拉程序中之固化 作用。 另外，未經審核之日本特許請願案第8-325090 (1996) 號掲述一種同類之熱遮蔽構件之管體，係作成由基材與被 覆材所組成之多層結構體。基材僳石墨或在相對應之輻射 溫度下具有熱阻特性之材料。另一方面，該被覆材像石英 或與基材相比較下具有較低熱輻射率之材料。此種熱遮蔽 構件之結構將有助於防止坩堝及加熱器之熱能輻射至矽單 結晶晶錠，傺利用具有比基材更低之熱輻射率之被覆材料 -4- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） Φ H ϋ ϋ-·— H ϋ Ml n —i n n ϋ 0 ί ϋ l ϋ ·1 一-0, · ϋ I ϋ I ϋ I IMi ϋ ϋ I 1-1 I I 4— ϋ n ϋ ϋ ϋ ϋ I I ϋ n ϋ I I (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 573082 . A7 B7 五、發明說明（2 ) 覆蓋於具有較高熱輻射率之基材上。結果由於矽單結晶晶 錠之冷卻加速，從矽熔體提拉矽單結晶晶錠之提拉率亦將 增加，於是矽單結晶晶錠之生産率將會增加。 然而，未經審核之日本特許讅願案第8-325090 (1996) 號所掲述之拉晶機之熱遮蔽構件，在矽單結晶晶錠靠近矽 熔體之部份發生溫度不均之現象。卽在該部份之中央之溫 度最高，從中央至外側之溫度漸低，在該部份之最外周之 溫度驟減。可以想像如果矽單結晶晶錠之直徑更大時，矽 單結晶晶錠之中央與外周之溫差將會更鉅。因此上述溫差 將會導致矽單結晶晶錠中産生熱應力。 本發明之一目的在於提供一種從矽熔體中提拉矽結晶 以製取矽單結晶晶錠之拉晶機所用之熱遮蔽構件。該熱遮 蔽構件可防止從矽熔體中提拉之矽單結晶晶錠之外周面之 溫度驟降，藉以抑制矽單結晶晶錠中産生熱應力。 本發明之另一目的在於提供一種從矽熔體中提拉矽結 晶以製取矽單結晶晶錠之拉晶機。該拉晶機具有一熱遮蔽 構件，可防止從矽熔髏中提拉之矽單結晶晶錠之外周面之 溫度驟降，藉以抑制矽單結晶晶錠中産生熱應力。 本發明之第一項目的掲述一種裝配在拉晶機内用以將 保存在石英坩堝之矽熔體中提拉出矽單晶晶錠之熱遮蔽構 件，該拉晶機主要係在其外周面環繞設置有一加熱器，該 熱遮蔽構件具有一管體用以圍繞向上成長及提拉之矽單晶 晶錠以防止加熱器至矽單結晶晶錠之熱輻射。管體之下端 係設在矽熔體之表面上保持特定間距；及在管體下部設有 -5 - 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐) --I-------------------^訂--------AW (請先閱讀背面之注意事項再填寫本頁) 573082 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（3 ) 一突起部，其内裝填熱绝緣體，係向内延伸並具有朝向砂 熔體之底壁。 底壁僳作成璟形，其外緣僳連接管體之底緣，並延伸 至矽單結晶錠之外周面之近端。突起部亦具有一垂直壁， 僳與矽單結晶晶錠之外周面保持特定間距，並連接至底壁 之内緣，沿著與矽單結晶晶錠之軸心互相平行之方向或相 對於矽單結晶晶錠之軸心呈-30度或+30度之方向延伸；另 外包括一圓錐形之頂壁，其下線僳連接垂直壁之上緣，而 其上緣傺連接管髏之内周面，並以直徑漸近擴大之方式向 上延伸。 其中，向上延伸並具有逐漸擴大之直徑之斜内壁可在 垂直壁與底壁之間構成交會，並以梓對於底壁底面呈80度 或以下但不等於零之角度傾斜，以符合矽單結晶晶錠之直 徑”d”與垂直壁之底緣至底壁之底面之距離”L1”之闋僳為 0〈=Ll〈=d/2〇 在此，垂直壁之高度”Η”僳介於ΙΟίΒΐπ至d/2之範圍， 其中”d”係代表矽單結晶晶錠之直徑。 矽單結晶晶錠之外周面與垂直壁之間距係介於l〇mm至 30mm之間。 管體下緣直徑”D1"與石英坩堝之内徑"D2”及矽單結晶 晶錠之直徑”d”之關僳可以1.65d<Dl<D2表示。 管體朝下之直徑將會逐漸減小。 管體包括一内管部，一外管部，及介置於内管部與外 管部之間填充之熱絶緣體。 -6 一 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） IT· 一---.--------------^------- (請先閱讀背面之注意事項再填寫本頁) 573082 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（4 ) 至少一個環形熱傳導構件具有外周線連接至管體或斜 外壁，而内周綠連接至垂直壁或斜内壁，可橫向形成於突 起部之内側。 向下延伸同時直徑漸減之斜外壁可形成於管體與底壁 之交會處，並以相對於底壁下倒面傾斜80度或以下但不等 於零之角度，藉此符合矽單結晶晶錠之直徑”d”與管體下 緣至底壁下侧面之垂直距離” L2”之關係，即0< = L2〈 = d/2。 底壁可作成圓錐形狀，其外緣連接至管體之下緣並延 伸至矽單结晶晶錠之外周面之近端，在向上或向下之方向 直徑漸減，對平面呈80度或以下但不等於零之角度。突起 部另具有：設在與矽單結晶晶錠之外周面保持特定距離之 垂直壁，連接底壁之内緣，與矽單結晶晶錠之軸心平行之 方向延伸或相對於矽單結晶晶錠之軸心呈-30度至+30度之 角度延伸；及一圓錐形頂壁，其下緣偽連接垂直壁上綠， 而其上緣偽附接於管體之内周面，向上延伸而直徑漸減。 垂直壁之高度"H”係介於10mm至d/2之範圍，其中 "d”偽矽單結晶晶錠之直徑。 矽單結晶晶錠之外周面與垂直壁之間距係介於l〇mni至 30mm之範圍。 管髏下緣之直徑”D1”，石英坩堝之内徑”D2”，及矽單 結晶晶錠之直徑”d”之關僳為1.65d<Dl<D2。 管髏向下之直徑漸減。 管體包括一内管部，一外管部，及.介置於内管部與外 管部之間之熱絶緣體。 -7- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） II Γ I--^_wl ^-------- I ^---I--J--. (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 573082 A7 B7 五、發明說明（5 ) 至少一個環形熱傳導構件具有外周緣連接至管體或斜 外壁，而内周緣連接至垂直壁或斜内壁，可横向形成於突 起部之内倒。 底壁包括：外緣連接管體下緣之外底壁，相對於平面 呈80度或以下但不等於零之傾斜角度，向下方向之直徑漸 減；及外緣連接外底壁下緣之内底壁，其内緣延伸至矽單 結晶晶錠之外周面之近端，相對於平面呈80度或以下但不 等於零之傾斜角度，向上方向之直徑漸減。突起部另外包 括：設在與矽單結晶晶錠之外周面保持特定距離之垂直壁 ，連接底壁之内緣，與矽單結晶晶錠之軸心平行之方向延 伸或相對於矽單結晶晶錠之軸心呈-30度至+30度之角度延 伸；及一圓錐形頂壁，其下緣係連接垂直壁上綠，而其上 緣係附接於管髏之内周面，向上延伸而直徑漸減。 垂直壁之高度”H”傺介於10mm至d/2之範圍，其中 ”d”偽矽單結晶晶錠之直徑。 矽單結晶晶錠之外周面與垂直壁之間距僳介於10 mm至 30mm之範圍。 管體下緣之直徑” D1”，石英坩堝之内徑” D2”，及矽單 結晶晶錠之直徑”d"之關僳為1.65d<Dl<D2。 管體向下之直徑漸減。 管體包括一内管部，一外管部，及介置於内管部與外 管部之間之熱絶緣體。 至少一個璟形熱傳導構件具有外周緣連接至管-體或斜 外壁，而内周綠連接至垂直壁或斜内壁，可橫向形成於突 -8- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ----------------· I------^-------J. (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 573082 A7 一― B7 五、發明說明（6 ) ' 起部之内侧。 本發明之第二項目的掲述一種用以將保存在石英坩堝 之矽熔體中提拉出矽單晶晶錠之拉晶機，僳在其外周面環 繞設置有一加熱器，由一熱遮蔽構件構成為待徽，該熱遮 蔽構件具有一管體用以圍繞向上成長及提拉之矽單晶晶錠 以防止加熱器至矽單結晶晶錠之熱輻射。管體之下端係設 在矽熔體之表面上保持特定間距；及在管體下部設有一突 起部，其内裝填熱絶緣髏，係向内延伸並具有朝向矽熔體 之底壁。 因此，本發明可解決傳統熱遮蔽構件之靠近矽熔體之 矽單結晶晶錠部份之溫度不均，中央部份溫度最高而從中 央至外側溫度漸減，在外周面溫度驟減之問題。另一方面 ，根據本發明，從矽單結晶晶錠之外周面向外輻射之熱輻 射能偽受突起部之垂直壁所反射或受突起部之溫度所抑制 ,由高溫矽熔體之熱輻射中顯著增加。於是，突起部將可 制止矽單結晶晶錠之外周面之溫度發生驟減。結果該晶錠 之中央至外周面之溫度分佈較為均勻。換言之，突起部可 提供矽單結晶晶錠之垂直熱斜率，其中任何部份之徑向溫 度分佈僳大致均勻。由於可遏止作用在矽單結晶晶錠之熱 應力，故可防止最終産品之滑移生産及第一位錯生産。 另外，本發明中之圓錐形頂部可供惰性氣體向下通過 矽單結晶晶錠之外周部份與管體之外周面之間之空隙，順 暢地被引入矽熔體與突起部之間之空隙。於是該熱絶緣體 可藉聚集矽熔體至突起部之輻射熱能而有效地防止矽單結 -9* 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） — ^ίιιί — — — — — · -------I ^ « — — — — — — i— (請先閱讀背面之注意事項再填寫本頁) 573082 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（7 ) 晶晶錠之外周部份之降溫現象。 本發明之上述及其他目的，特徽及效益可藉以照 附圖之實施例之詳細說明而愈趨明晰。 以下參照附圖詳細說明本發明之第一較可取實施例。 第1圖僳本發明之用以從矽熔體中提拉矽結晶之拉晶 機之第一較可取實施例。本實施例之拉晶機10具有一容器 11,其内設置有用以保存矽熔體12之石英坩堝13。該石英 坩堝13之外周面僳以石墨支座14所包覆。石英坩堝13之底 側共軸固定於穿透石墨支座14之支軸16之頂端，而支軸16 之底端偽連接至具有第一迴轉發動機（未予圖示）之驅動機 構17,可轉動石英坩堝13及上下發動機（未予圖示）使石英 坩堝13作上下移動。於是，石英坩堝13除了可上下移動之 外，亦可作預定方向之轉動。石英谢堝13之外周面僳圍設 有一加熱器18,兩者之間保持預定間距。此外，加熱器18 係被熱絶緣筒19所圍繞。製備矽熔體12時，加熱器18將對 放置於石英坩堝13中之高純度矽多晶材料進行加熱及熔解 作用。 容器11之上端傺連接至設有提拉構件22之圓筒外殼21 上。提拉構件22具有下列組成：樞接於外殼21頂端之水平 位置之拉頭（未予圖示）；用以轉動拉頭之第二迴轉發動機 (未予圖示）；從拉頭懸吊至石英坩堝13之旋轉中心之纜索 23;及安裝在拉頭用ά捲動纜索23之提拉發動機（未予圖 示）。在嫌索23之下端繫有晶籽24以將晶籽24浸入矽熔體 12·中再缓慢地提拉上來。提拉上來之結晶體偽予轉動以確 -10- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） --I — — — — — — ·1111111 一 δ、a — — — — — — — I I — — — — — — ΓΙ — Ki. (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 573082 A7 B7 五、發明說明（8 ) 保均勻之結晶生成以取得矽單結晶晶錠25。 此外，容器11像連接著一氣體饋入及排出構件28,可 將惰性氣體饋入容器11中之矽單結晶晶錠25之側面，並將 惰性氣體從石英坩堝13之内周面之旁邊排出。氣髏饋入及 排出構件28具有一饋入管29及一排氣管30。饋入管29之一 端通過外殼21之周壁連通容器11内部，而另一端則連接至 一貯存上述惰性氣體之貯槽（未予圖示）。另一方面，排氣 管30之一端傺通過容器11之底部連通容器11内部，而另一 端則連接真空泵（未予圖示）。該饋入管及排氣管29, 30均 各裝配有第一及第二流動諝節閥31, 32,用以調節通過管 體29, 30之惰性氣體之量。 提拉發動機之輸出軸（未予圖示）僳裝設有一轉動编碼 器（未予圖示），而驅動機構17則裝設有重量感應器（未予 圖示）及線性编碼器（未予圔示）。重量感應器可偵測石英 坩堝13中之矽熔體12之重量，而線性编碼器則偵測支軸16 在上下移動時之位置。轉動编碼器，重量感應器及線性编 碼器之偵測輸出值係連接至控制器（未予圖示）之控制輸入 。此外，控制器之控制輸出值係連接至提拉裝置22之提拉 發動機及驅動機構17之上下發動機。再者，控制器之記億 體（未予圖示）可貯存第一映像及第二映像。第一映像包括 相對於轉動编碼器之偵测輸出值之繞成之纜索23長度之數 據（即從矽熔體12中提拉形成結晶之矽犟結晶晶錠25之長 度）。9 一方面，第二映像包括相對於重量感應器之偵測 輸出值之在石英坩堝13中之矽熔體12之液位數據。為了保 -11- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） --1---,--------------^-------- (請先閱讀背面之注意事項再填寫本頁) 573082 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（9 ) 持石英坩堝13中之矽熔體12之液位，控制器經設計依據重 量感應器之偵測信號控制坩堝驅動機構17之上下發動機。 在矽單結晶晶錠25之外周面與石英坩堝13之内周面之 間設置有一熱遮蔽構件36,利用熱遮蔽構件36將晶錠25圍 封起來。熱遮蔽構件36具有：用以防止圓筒形加熱器18發 出之輻射熱之管體37;連接管體37之上緣並以水平方向朝 外突出之凸緣部38。凸緣部38像安裝在熱絶緣管體19上以 將熱遮蔽構件36固定於容器11中。熱遮蔽構件38僳由選自 鉬（Mo),鎢00,及碩（C)或塗覆以SiC之石墨等材料所 製成。管體37可具有與同軸之任何組件相同之直徑。另一 方面，管體37可作成直徑遞減之截錐形結構體。在本實施 例中，管髏僳經設計使管體37下端之外徑” D1”，石英坩堝 13之内徑”D2”，及矽單結晶晶錠之直徑”d”之關僳可以下 式表示：1.65d<Dl<D2。 第2画所示之管體37與同軸之任何組件之直徑相同， 並具有沿著其底端向内突出之突起部41。突起部41俗由底 壁42,垂直壁44,及一頂壁46所組成。由平面圖而看，底 壁42係作成環狀可配合即將長成之結晶。如上圖所示，璟 狀底壁42之外緣僳連接於管髏37之底緣，並水平朝向矽單 結晶晶錠25之外周面之近端延伸。另一方面，底壁42之内 緣像連接至垂直壁44。頂壁46延伸如同截頭圓錐體之表面 而朝上之直徑遞增。如圖所示，傾斜之内壁43僳作為垂直 壁44與底壁42之交接。傾斜内壁43亦延伸如同截頭圓錐體 之表面而朝上之直徑遞減。另一方面，傾斜外壁45偽作為 -12- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） τ—---------------訂—-----*線 (請先閱讀背I之注意事項再填寫本頁) 573082 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（1〇) 管體37與底壁42之交接。傾斜外壁45偽延伸如截錐體之表 面而朝下之直徑遞增。内壁及外壁43,45之各個傾角Θ及 oc不超過80度，以相對於底壁42底倒之5至30度之範圍。 在本實施例中，管體37及壁部42,43,及45係以一件式 形成。内壁及傾斜外壁43,45僳經設計以符合下列條件。 即，矽單結晶晶錠25之直徑”d”，由垂直壁44之底緣至底壁 32下側之垂直距離”L1”俗以下式表示：0〈 LI < d/2。此 外，”d”與管體37底緣至底壁32之垂直距離"L2”之關偽是 0 < L2 < d/2。再者，矽單結晶晶錠25之外周面與垂直壁 44之間距”W1”僳介於10mm至3Omni之範圍，最好係15mm至20 mm。於此場合，最好突起部41之寬度” W2”僳50mm或以上。 垂直壁44之内倒與底壁42之内緣之間之水平間距”tf3”僳超 逾0mm但不超過突起部41之寬度”1/2”。同理，管體37之外 周面與底壁42之外緣之間之水平間距”W4”僳超逾0mm但低 於突起部41之寬度”W2”。 垂直壁44具有10至100ma之高度，並沿著平行於矽單 結晶晶錠25之軸心之方向或相對於該軸心傾斜-30至+30度 之角度延伸。於後者之場合，”-30度”僳指垂直壁44向上 直徑遞減而沿著該軸心之30度角度延伸，而” + 30度”僳指 垂直壁44向上直徑遞增而沿著該軸心之30度角度延伸。在 本實施例中，最後垂直壁44僳以與矽單結晶晶錠25之軸心 平行之方向延伸。換言之，最好垂直壁傜以垂直方向延伸 。前述之垂直距離L1,L2,間距W1,及高度Η等傜依據將取 得之矽單結晶晶錠25之直徑予以適當詮釋。作等截錐頂壁 -13 - 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) #裝 i訂· ;線< 經濟部智慧財產局員工消費合作社印製 573082 A7 B7 五、發明說明（11) 46之目的在於使直徑向上遞增。此外，頂壁46之頂線僳與 管體37之内周面接觸。突起部41之内側像被管體37之下部 ，底壁42,垂直壁44,及頂壁46所圍封形成一密封空間， 其内裝填有諸如磺缕製之昵絨材料等熱絶緣體47。垂直壁 44與頂壁46僳作成一髏形成構造，在將熱絶緣髏47裝填於 筒管37下部，傾斜外壁25,底壁42,及傾斜内壁43所形成 之空間後，可利用螺栓或銷等將該垂直壁44與頂壁46固定 於傾斜内壁43及管體37之上。 以下將說明用以提拉矽單結晶之拉晶機之操作特徽。 如前所述，傳統之拉晶機中，當矽單結晶25逐漸從矽 熔體中提拉出來時，在矽單結晶晶錠25與矽熔體12之近端 將發現溫度不均勻分佈之現象。即在該部位之中心出現最 高溫，從中心至外侧沿著晶錠25之徑向之溫度遞減/由於 矽單結晶晶錠25之外周面有大量熱輻射，於是在該部位之 外周之溫度將會驟降'。 然而，本實施例可防止述問題發生。熱遮蔽構件36具 有突起部41圍繞著從矽熔體12中提拉出來之矽單結晶晶錠 25。更詳細而言，突起部41之傾斜内壁43及垂直壁44係設 在矽單結晶晶錠25甫離開矽熔體25表面之位置，故可防止 晶錠25該部位之外周面之大量熱輻射。即矽單結晶晶錠25 外周面之熱輻射將會被設在接近該表面之突起部41之傾斜 内壁43與垂直壁44所反射。此外，突起部41之溫度受高溫 矽熔體12之熱輻射影鎏而有顯著上升。結果矽單結晶晶錠 25外周面之溫度驟降現象可免發生，而中心至外周面之溫 -14- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） --------訂--------^-線· (請先閱讀背面之注意事項再填寫本頁) 573082 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（12 ) 度分佈亦大致均勻。換言之，本實施例之拉晶機可提供矽 單結晶晶錠25之垂直熱梯度，其中各該部位之溫度平均， 防止矽單結晶晶錠25上産生熱應力，於是産品之滑差製程 及第一錯位製程可免。 第3圖顯示本發明之第二較可取實施例之用以從矽熔 體中提拉矽單結晶之拉晶機之熱遮蔽構件36。在此圖中， 與第2圖所示之相同組件傈以相同代號表示。 本實施例中，在突起部41上設有二値環狀熱導體48, 使各該熱導髏48之外緣係連接著管體37或傾斜外壁45,而 内緣偽連接至垂直壁44或傾斜内壁43。當將熱絶緣體47填 入突起部41時，熱導體48亦連同熱絶緣體47被置於突起部 41中。即熱導體48像被置於由管體37下部，傾斜外壁45, 底壁42,及傾斜外壁45等所形成之空間，然後將一體成型 之垂直壁44及頂壁46利用螺栓或銷等安裝在傾斜内壁43與 管體37上。因此，熱導體48横貫突g部41内側，其中各部 件之外周面像連接至管體37,而内緣係連接至垂直壁44或 傾斜内壁43。 如前所述作成之熱遮蔽構件36可抑止矽單結晶晶錠25 外周面之溫度驟降.。從矽熔體中提拉出矽結晶之過程中， 垂直壁44或傾斜内壁43偽受石英坩堝13内周壁之輻射熱或 從加熱器發出之熱能予以加熱。於此場合，本實施例之拉 晶機可通過熱導體48將管體37或傾斜外壁45之熱傳遞至垂 直壁44或傾斜内壁43,藉此有效地提高垂直壁44及傾斜内 壁43之溫度。因此，升溫之垂直壁44或傾斜内壁43將有助 - -- (請先閱讀背面之注意事項再填寫本頁) #裝 -l·訂· 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 經濟部智慧財產局員工消費合作社印製 573082 A7 B7 五、發明說明（13 ) 於釋放矽單結晶晶錠25之熱輻射，可防止矽單結晶晶錠25 外周面之溫度驟降。各熱導體48之厚度像取決於熱導體48 之數目。然而，最好僳介於6至9min之範圍。本實施例之 拉晶機之操作特徵之進一步詳情傷與第一實施例者大致相 同，故不予赘述。 上述實施例中，熱遮蔽構件36之管體37偽呈圓筒形管 之形狀。如第4圖所示，它亦可作成直徑遞減之圓形截錐 中空體，向下逐漸縮小。於此場合，矽單結晶晶錠25外周 部與管體37外周面之間隙將朝向矽熔體12之方向逐漸擴大 ,於是向下通過該空間之惰性氣髏可順暢地被引入矽熔體 12與突起部41之間隙中。如第5圔所示，另一方面管體37 可包括内管部37a,外管部37b，及裝填在内外管部37a與 37b之間之熱絶緣體37c。設在管體37之雙層壁結構體中 之熱絶緣體37c將限制石英坩堝13之内周壁之熱輻射向矽 單結晶晶鍵25。 再者，上述實施例之傾斜内壁43僳設在垂直壁44與底 壁42之間，而傾斜外壁45僳設在管體47與底壁42之間。如 第6圖所示，傾斜内壁45僅設在垂直壁44與底壁42之間而 不需提供傾斜外壁。如第7圖所示，另一方面傾斜外周壁Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 573082 A7 B7 V. Description of the Invention (1) The present invention relates to a device that is provided in a crystal pulling device (also referred to as a crystal pulling machine) for pulling from the melt and A heat shielding member grown into a silicon single crystal ingot, and a crystal pulling machine using the heat shielding member. To date, various devices for pulling silicon single crystal ingots have been described in various documents. These include the crystal pulling machine shown in Japanese Examination and Approval Petition No. 57-40119 (1982), which is composed of a container with a quartz crucible for holding the silicon melt, and the outer surface of the silicon single crystal ingot and quartz The crucible is composed of a heat shielding member between the inner surfaces, and the ingot is enclosed in the heat shielding member. In other words, the heat shielding member has a pipe body surrounding the peripheral surface of the silicon single crystal ingot and provided at a certain distance above the silicon melting cross, thereby preventing heat energy from being radiated outward from the heater. When the silicon crystal is gradually pulled out of the silicon melt, the liquid level of the silicon melt skull will gradually decrease, so the inner wall of the quartz crucible will be exposed. Thermal radiation from the inner peripheral surface of the exposed quartz crucible will be transmitted to the outer peripheral surface of the silicon single crystal ingot. Therefore, the heat-sealing member will inhibit the radiation effect to prevent the heat radiation from extending to the outer peripheral surface of the silicon single crystal ingot, so the silicon single crystal ingot can be quickly cooled to accelerate the solidification effect in the pulling process. In addition, Unexamined Japanese Patent Application No. 8-325090 (1996) describes a tube body of the same type of heat shielding member, which is a multilayer structure composed of a base material and a covering material. Base material: graphite or materials with thermal resistance characteristics at the corresponding radiation temperature. On the other hand, the coating material is like quartz or a material having a lower thermal emissivity compared to the substrate. The structure of this heat shielding member will help prevent the heat energy of the crucible and the heater from radiating to the silicon single crystal ingot, and 傺 use a covering material with a lower thermal emissivity than the substrate -4- This paper is applicable to China Standard (CNS) A4 specification (210 X 297 mm) Φ H ϋ ϋ- · — H ϋ Ml n —inn ϋ 0 ί ϋ l ϋ · 1 a -0, · ϋ I ϋ I ϋ I IMi ϋ ϋ I 1 -1 II 4— ϋ n ϋ ϋ ϋ ϋ II ϋ n ϋ II (Please read the notes on the back before filling out this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 573082. A7 B7 V. Description of Invention (2) Covered on substrates with high thermal emissivity. As a result of the accelerated cooling of the silicon single crystal ingot, the pulling rate of the silicon single crystal ingot from the silicon melt will also increase, so the productivity of the silicon single crystal ingot will increase. However, in the unshielded Japanese Patent Volunteer Case No. 8-325090 (1996), the heat shielding member of the crystal pulling machine has a temperature unevenness in the portion of the silicon single crystal ingot near the silicon melt. .温 The temperature at the center of the part is the highest, the temperature from the center to the outside gradually decreases, and the temperature at the outermost part of the part decreases sharply. It is conceivable that if the diameter of the silicon single crystal ingot is larger, the temperature difference between the center and the periphery of the silicon single crystal ingot will be greater. Therefore, the above temperature difference will cause thermal stress in the silicon single crystal ingot. An object of the present invention is to provide a heat shielding member used in a crystal pulling machine for pulling a silicon crystal from a silicon melt to produce a silicon single crystal ingot. The heat shielding member can prevent the temperature drop on the outer peripheral surface of the silicon single crystal ingot pulled from the silicon melt, thereby suppressing thermal stress in the silicon single crystal ingot. Another object of the present invention is to provide a crystal pulling machine for pulling silicon crystals from a silicon melt to obtain silicon single crystal ingots. The crystal pulling machine has a heat shielding member, which can prevent the temperature drop on the outer surface of the silicon single crystal ingot pulled from the silicon melting cross, thereby suppressing thermal stress in the silicon single crystal ingot. A description of the first item of the present invention is a heat shielding member assembled in a crystal pulling machine for pulling out a silicon single crystal ingot from a silicon melt stored in a quartz crucible. The crystal pulling machine is mainly on its outer peripheral surface. A heater is arranged around, and the heat shielding member has a tube body for surrounding the silicon single crystal ingot grown and pulled upward to prevent heat radiation from the heater to the silicon single crystal ingot. The lower end of the pipe body is set on the surface of the silicon melt to maintain a specific distance; and -5 is provided on the lower part of the pipe body-This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) --I- ------------------ ^ Order -------- AW (Please read the precautions on the back before filling this page) 573082 Employee Consumption of Intellectual Property Bureau, Ministry of Economic Affairs Cooperative printed A7 B7 V. Description of the invention (3) A protruding part is filled with a thermal insulator, which extends inward and has a bottom wall facing the sand melt. The bottom wall 僳 is formed into a 璟 shape, and its outer edge 僳 is connected to the bottom edge of the pipe body and extends to the proximal end of the outer peripheral surface of the silicon single crystal ingot. The protruding portion also has a vertical wall, and the ytterbium maintains a certain distance from the outer peripheral surface of the silicon single crystal ingot, and is connected to the inner edge of the bottom wall, along a direction parallel to the axis of the silicon single crystal ingot or relative to the silicon The axis of the single crystal ingot extends in the direction of -30 degrees or +30 degrees; it also includes a conical top wall whose lower line 僳 connects the upper edge of the vertical wall and its upper edge 傺 connects the inner peripheral surface of the pipe skull. And extend upwards as the diameter gradually increases. Among them, the inclined inner wall extending upward and having a gradually enlarged diameter can form a meeting between the vertical wall and the bottom wall, and is inclined at an angle of 80 degrees or less but not equal to zero to the bottom surface of the bottom wall to meet the silicon single crystal The diameter of the ingot "d" and the distance "L1" from the bottom edge of the vertical wall to the bottom surface of the bottom wall is 0 <= Ll <= d / 2〇 Here, the height of the vertical wall "Η" 僳 is between ΙΟίΒΐπ In the range of d / 2, "d" represents the diameter of the silicon single crystal ingot. The distance between the outer peripheral surface of the silicon single crystal ingot and the vertical wall is between 10 mm and 30 mm. The relation between the diameter "D1" of the lower edge of the tube body and the inside diameter "D2" of the quartz crucible and the diameter "d" of the silicon single crystal ingot can be expressed by 1.65d < Dl < D2. The downward diameter of the tube will gradually decrease. The pipe body includes an inner pipe portion, an outer pipe portion, and a thermal insulator filled between the inner pipe portion and the outer pipe portion. -6 A paper size is applicable to China National Standard (CNS) A4 specification (210 X 297 mm) IT · 一 ---.-------------- ^ ------ -(Please read the precautions on the back before filling this page) 573082 Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention (4) At least one annular heat conducting member has a peripheral line connected to the pipe body or the inclined outer wall, The inner peripheral green is connected to the vertical wall or the inclined inner wall, and can be formed laterally on the inner side of the protruding portion. An oblique outer wall extending downward while decreasing in diameter can be formed at the intersection of the pipe body and the bottom wall, and at an angle of 80 degrees or less but not equal to zero relative to the bottom face of the bottom wall, thereby conforming to the silicon single crystal ingot The relationship between the diameter "d" and the vertical distance "L2" from the lower edge of the pipe body to the lower side of the bottom wall, that is, 0 < = L2 <= d / 2. The bottom wall can be made into a conical shape, and its outer edge is connected to the lower edge of the pipe body and extends to the proximal end of the outer peripheral surface of the silicon single crystal ingot. The diameter gradually decreases in the upward or downward direction, and the plane is 80 degrees or less but flat Angles not equal to zero. The protrusion also has a vertical wall provided at a certain distance from the outer peripheral surface of the silicon single crystal ingot, connected to the inner edge of the bottom wall, extending in a direction parallel to the axis of the silicon single crystal ingot or opposite to the silicon single crystal ingot. The axis of the ingot extends at an angle of -30 degrees to +30 degrees; and a conical top wall whose lower edge is pseudo-connected to the vertical wall green, and its upper edge is pseudo-attached to the inner peripheral surface of the pipe body and extends upward The diameter decreases. The height of the vertical wall " H "is in the range of 10mm to d / 2, where " d" is the diameter of the pseudo-silicon single crystal ingot. The distance between the outer peripheral surface of the silicon single crystal ingot and the vertical wall is in the range of 10 mm to 30 mm. The relation between the diameter "D1" of the lower edge of the pipe cross, the inner diameter "D2" of the quartz crucible, and the diameter "d" of the silicon single crystal ingot is 1.65d < Dl < D2. The downward diameter of the pipe skull decreases. The pipe body includes an inner pipe portion, an outer pipe portion, and a thermal insulator interposed between the inner pipe portion and the outer pipe portion. -7- This paper size is in accordance with Chinese National Standard (CNS) A4 (210 X 297 mm) II Γ I-^ _ wl ^ -------- I ^ --- I--J--. (Please read the precautions on the back before filling this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 573082 A7 B7 V. Description of the invention (5) At least one annular heat conduction member has an outer peripheral edge connected to the pipe body or the inclined outer wall, and The inner peripheral edge is connected to the vertical wall or the inclined inner wall, and can be formed inwardly and laterally in the protruding portion. The bottom wall includes: the outer edge connects the outer bottom wall of the lower edge of the pipe body, an inclination angle of 80 degrees or less but not equal to zero with respect to the plane, and the diameter in the downward direction gradually decreases; and the outer edge connects the inner bottom of the lower edge of the outer bottom wall The wall, whose inner edge extends to the proximal end of the outer peripheral surface of the silicon single crystal ingot, is inclined at an angle of 80 degrees or less but not equal to zero with respect to the plane, and the diameter in the upward direction gradually decreases. The protrusion further includes a vertical wall provided at a certain distance from the outer peripheral surface of the silicon single crystal ingot, connected to the inner edge of the bottom wall, extending in a direction parallel to the axis of the silicon single crystal ingot or opposite to the silicon single crystal ingot. The axis of the ingot extends at an angle of -30 degrees to +30 degrees; and a conical top wall, the lower edge of which is connected to the vertical wall green, and the upper edge is attached to the inner peripheral surface of the pipe skeleton and extends upward The diameter decreases. The height “H” of the vertical wall ranges from 10 mm to d / 2, where the diameter of the “d” pseudo-silicon single crystal ingot. The distance between the outer peripheral surface and the vertical wall of the silicon single crystal ingot ranges from 10 mm to 30 mm. The diameter of the lower edge of the tube "D1", the inner diameter of the quartz crucible "D2", and the diameter of the silicon single crystal ingot "d" are 1.65d < Dl < D2. The diameter of the tube decreases downwards. The body includes an inner tube portion, an outer tube portion, and a thermal insulator interposed between the inner tube portion and the outer tube portion. At least one 璟 -shaped heat conducting member has an outer peripheral edge connected to the tube-body or an inclined outer wall, and the inner portion Zhou Lu is connected to the vertical wall or the inclined inner wall, and can be formed in the horizontal direction -8- This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) ------------- --- · I ------ ^ ------- J. (Please read the notes on the back before filling out this page) Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 573082 A7 ― B7 5 (6) Description of the invention (6) 'Inside the starting portion. The description of the second item of the present invention is a crystal pulling machine for pulling a silicon single crystal ingot stored in a silicon melt in a quartz crucible, A heater is arranged around the outer peripheral surface, and is constituted by a heat shielding member. The heat shielding member has a tube body for surrounding a silicon single crystal grown and pulled upward. In order to prevent the heat radiation from the heater to the silicon single crystal ingot. The lower end of the tube is set on the surface of the silicon melt to maintain a specific distance; It extends inside and has a bottom wall facing the silicon melt. Therefore, the present invention can solve the temperature unevenness of the silicon single crystal ingot portion of the traditional heat shielding member near the silicon melt, and the temperature of the central portion is the highest and from the center to the outside The problem is that the temperature gradually decreases and the temperature decreases sharply on the outer peripheral surface. On the other hand, according to the present invention, the heat radiation radiated from the outer surface of the silicon single crystal ingot can be reflected by the vertical wall of the protrusion or the temperature of the protrusion. Suppressed, the heat radiation from the high-temperature silicon melt increases significantly. Therefore, the protrusions can prevent the temperature of the outer peripheral surface of the silicon single crystal ingot from decreasing sharply. As a result, the temperature distribution from the center of the ingot to the outer peripheral surface is relatively uniform. In other words, the protrusion can provide the vertical thermal slope of the silicon single crystal ingot, and the radial temperature distribution of any part of it is approximately uniform. Because the thermal stress on the silicon single crystal ingot can be suppressed Therefore, the slip production of the final product and the first dislocation production can be prevented. In addition, the conical top in the present invention allows the inert gas to pass downward between the outer peripheral portion of the silicon single crystal ingot and the outer peripheral surface of the pipe body. The gap is smoothly introduced into the gap between the silicon melt and the protrusion. Therefore, the thermal insulator can effectively prevent the silicon single junction by collecting the radiant heat energy from the silicon melt to the protrusion -9 * This paper size is applicable to China National Standard (CNS) A4 specification (210 X 297 mm) — ^ ίιιί — — — — — · ------- I ^ «— — — — — — — i— (Please read the precautions on the back before (Fill in this page) 573082 A7 B7 printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs V. Description of the invention (7) The cooling phenomenon on the outer part of the crystal ingot. The above-mentioned and other objects, special emblems and benefits of the present invention can be made clearer by the detailed description of the embodiments of the drawings. Hereinafter, a first preferred embodiment of the present invention will be described in detail with reference to the drawings. Fig. 1 is a first preferred embodiment of a crystal pulling machine of the present invention for pulling silicon crystals from a silicon melt. The crystal pulling machine 10 of this embodiment has a container 11, and a quartz crucible 13 for holding a silicon melt 12 is set therein. The outer surface of the quartz crucible 13 is covered with a graphite support 14. The bottom side of the quartz crucible 13 is coaxially fixed to the top end of the support shaft 16 penetrating the graphite support 14, and the bottom end of the support shaft 16 is pseudo-connected to a drive mechanism 17 having a first rotary engine (not shown). The quartz crucible 13 and the up and down engine (not shown) are rotated to move the quartz crucible 13 up and down. Therefore, in addition to being vertically movable, the quartz crucible 13 can also be rotated in a predetermined direction. A heater 18 is provided around the outer surface of the quartz vessel 13 and a predetermined distance is maintained therebetween. In addition, the heater 18 is surrounded by a thermally insulating cylinder 19. When the silicon melt 12 is prepared, the heater 18 will heat and melt the high-purity silicon polycrystalline material placed in the quartz crucible 13. The upper end of the container 11 is connected to a cylindrical casing 21 provided with a pulling member 22. The lifting member 22 has the following components: a slider (not shown) pivoted to a horizontal position at the top end of the casing 21; a second rotary engine (not shown) for turning the slider; suspended from the slider to The cable 23 at the center of rotation of the quartz crucible 13; and a pulling engine (not shown) installed on the slider for scrolling the cable 23. A seed 24 is attached to the lower end of the susceptor 23 to immerse the seed 24 in the silicon melt 12 · and slowly pull it up. The crystals that are pulled up are pseudo-rotated to confirm -10- This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) --I — — — — — — 1111111 a δ, a — — — — — — — II — — — — — — ΓΙ — Ki. (Please read the notes on the back before filling this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 573082 A7 B7 V. Description of the invention (8) Guarantee uniformity Crystals were formed to obtain a silicon single crystal ingot 25. In addition, the container 11 is connected to a gas feeding and discharging member 28, which can feed inert gas to the side of the silicon single crystal ingot 25 in the container 11 and discharge the inert gas from the side of the inner peripheral surface of the quartz crucible 13 . The air-skeleton feed and discharge member 28 has a feed pipe 29 and an exhaust pipe 30. One end of the feed pipe 29 communicates with the inside of the container 11 through the peripheral wall of the casing 21, and the other end is connected to a storage tank (not shown) for storing the above inert gas. On the other hand, one end of the exhaust pipe 30 communicates with the inside of the container 11 through the bottom of the container 11, and the other end is connected to a vacuum pump (not shown). The feed pipe and the exhaust pipe 29, 30 are each equipped with first and second flow throttle valves 31, 32 for regulating the amount of inert gas passing through the pipe bodies 29, 30. The output shaft (not shown) of the pull-up engine is equipped with a rotary encoder (not shown), and the drive mechanism 17 is equipped with a weight sensor (not shown) and a linear encoder (not shown). Not shown). The weight sensor can detect the weight of the silicon melt 12 in the quartz crucible 13, and the linear encoder detects the position of the support shaft 16 when it moves up and down. The detection output value of the rotary encoder, weight sensor and linear encoder is connected to the control input of the controller (not shown). In addition, the control output value of the controller is connected to the pulling engine of the pulling device 22 and the upper and lower engines of the driving mechanism 17. In addition, the controller's memory (not shown) can store the first image and the second image. The first image includes data about the length of the cable 23 wound with respect to the detection output value of the rotary encoder (that is, the length of the silicon ingot 25 ingot 25 drawn from the silicon melt 12 to form a crystal). 9 In one aspect, the second image includes level data of the silicon melt 12 in the quartz crucible 13 relative to the detection output value of the weight sensor. In order to ensure -11- this paper size applies Chinese National Standard (CNS) A4 specification (210 X 297 mm) --1 ---, -------------- ^ ---- ---- (Please read the precautions on the back before filling this page) 573082 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention (9) Holding the silicon melt 12 level in the quartz crucible 13 The controller is designed to control the crucible driving mechanism 17 to move the engine up and down based on the detection signal of the weight sensor. A heat shielding member 36 is provided between the outer peripheral surface of the silicon single crystal ingot 25 and the inner peripheral surface of the quartz crucible 13, and the ingot 25 is enclosed by the heat shielding member 36. The heat shielding member 36 includes a pipe body 37 for preventing radiant heat from the cylindrical heater 18, and a flange portion 38 which connects the upper edge of the pipe body 37 and projects outward in the horizontal direction. The flange portion 38 is mounted on the heat-insulating pipe body 19 as it is to fix the heat shielding member 36 in the container 11. The heat shielding member 38 构件 is made of a material selected from molybdenum (Mo), tungsten 00, and master (C) or graphite coated with SiC. The tube body 37 may have the same diameter as any component coaxial. On the other hand, the tube body 37 can be formed as a truncated cone-shaped structure having a decreasing diameter. In this embodiment, the design of the pipe skull is such that the outer diameter “D1” of the lower end of the pipe body 37, the inner diameter “D2” of the quartz crucible 13 and the diameter “d” of the silicon single crystal ingot can be expressed as follows: Representation: 1.65d < Dl < D2. The tube 37 shown in the second drawing has the same diameter as any of the coaxial components, and has a protrusion 41 protruding inward along its bottom end. The protruding portion 41 is generally composed of a bottom wall 42, a vertical wall 44, and a top wall 46. Viewed from a plan view, the bottom wall 42 is formed in a ring shape to cope with the crystal that is about to grow. As shown in the figure above, the outer edge of the 璟 -shaped bottom wall 42 is connected to the bottom edge of the pipe cross 37 and extends horizontally toward the proximal end of the outer peripheral surface of the silicon single crystal ingot 25. On the other hand, the inner edge of the bottom wall 42 is likewise connected to the vertical wall 44. The top wall 46 extends like a surface of a frustoconical cone with increasing diameter. As shown in the figure, the inclined inner wall 43 僳 serves as the interface between the vertical wall 44 and the bottom wall 42. The inclined inner wall 43 also extends like a surface of a frustoconical cone and decreases in diameter upward. On the other hand, the inclined outer wall 45 is false -12- This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) τ —--------------- Order— ----- * line (please read the precautions of the back I before filling out this page) 573082 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs V. Description of the invention (10) The tube 37 and the bottom wall 42 Handover. The diameter of the inclined outer wall 45 extending pseudo-likely as the surface of a truncated cone increases downward. Each of the inclination angles Θ and oc of the inner wall and the outer wall 43, 45 does not exceed 80 degrees, in a range of 5 to 30 degrees relative to the bottom of the bottom wall 42. In this embodiment, the pipe body 37 and the wall portions 42, 43, and 45 are formed in one piece. The inner and inclined outer walls 43,45 僳 are designed to meet the following conditions. That is, the diameter “d” of the silicon single crystal ingot 25 is expressed by the vertical distance “L1” from the bottom edge of the vertical wall 44 to the lower side of the bottom wall 32 as follows: 0 <LI < d / 2. In addition, the relationship between “d” and the vertical distance " L2 " from the bottom edge of the tube body 37 to the bottom wall 32 is 0 < L2 < d / 2. Furthermore, the outer peripheral surface of the silicon single crystal ingot 25 is perpendicular to The distance "W1" between the walls 44 is between 10mm and 3Omni, preferably between 15mm and 20mm. In this case, the width of the protrusion 41 is preferably "W2" 僳 50mm or more. The horizontal distance “tf3” between the inner edges of the bottom wall 42 exceeds 0 mm but does not exceed the width “1/2” of the protrusion 41. Similarly, between the outer peripheral surface of the pipe body 37 and the outer edge of the bottom wall 42 The horizontal distance “W4” is more than 0 mm but less than the width “W2” of the protrusion 41. The vertical wall 44 has a height of 10 to 100ma and is parallel or opposite to the axis of the silicon single crystal ingot 25 Extend at an angle of -30 to +30 degrees from the axis. In the latter case, "-30 degrees" means that the vertical wall 44 decreases in diameter upward and extends along the axis at an angle of 30 degrees, and "+ 30 degrees" “僳” means that the vertical wall 44 increases in diameter upward and extends along the axis at an angle of 30 degrees. In this embodiment, the final vertical wall 44 is aligned with the axis of the silicon single crystal ingot 25 Extend in a parallel direction. In other words, it is preferable that the vertical wall 傜 extend in the vertical direction. The aforementioned vertical distances L1, L2, pitch W1, and height Η are appropriately interpreted based on the diameter of the silicon single crystal ingot 25 obtained. Top wall of equal truncated cone -13-This paper size is applicable to Chinese National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page) # 装 i 订 ·; Thread < Economy Printed by the Consumer Cooperatives of the Ministry of Intellectual Property Bureau 573082 A7 B7 5. The purpose of the invention description (11) 46 is to increase the diameter upward. In addition, the top line 僳 of the top wall 46 is in contact with the inner peripheral surface of the pipe body 37. The protrusion 41 The inner side is enclosed by the lower part of the pipe body 37, the bottom wall 42, the vertical wall 44, and the top wall 46 to form a sealed space, which is filled with a thermal insulator 47 such as a velvet material such as sulphur cord. Vertical wall 44 and the top wall 46 僳 are formed into a skeleton forming structure. After the thermal insulation skeleton 47 is filled in the lower part of the bobbin 37, the space formed by the inclined outer wall 25, the bottom wall 42, and the inclined inner wall 43 can be bolted or pinned. The vertical wall 44 and the top wall 46 are fixed to the inclined inner wall 43 and the pipe body 37 The following will describe the special operation of the crystal pulling machine for pulling silicon single crystals. As mentioned above, in the traditional crystal pulling machine, when the silicon single crystal 25 is gradually pulled out of the silicon melt, The non-uniform temperature distribution will be found near the near ends of the silicon single crystal ingot 25 and the silicon melt 12. That is, the highest temperature appears in the center of the part, and the temperature along the radial direction of the ingot 25 decreases from the center to the outside / because There is a large amount of heat radiation on the outer peripheral surface of the silicon single crystal ingot 25, so the temperature at the outer periphery of the portion will drop sharply '. However, this embodiment can prevent the problems described above from occurring. The heat shielding member 36 has a protrusion 41 surrounding the silicon single crystal ingot 25 pulled out from the silicon melt 12. In more detail, the inclined inner wall 43 and the vertical wall 44 of the protruding portion 41 are provided at positions where the silicon single crystal ingot 25 leaves the surface of the silicon melt 25, so that a large amount of heat radiation on the outer peripheral surface of the portion of the ingot 25 can be prevented. . That is, the heat radiation from the outer peripheral surface of the silicon single crystal ingot 25 will be reflected by the inclined inner wall 43 and the vertical wall 44 of the protruding portion 41 provided near the surface. In addition, the temperature of the protrusion 41 is significantly increased by the heat radiation of the high-temperature silicon melt 12. As a result, the temperature drop on the outer surface of the silicon single crystal ingot 25 can be avoided, and the temperature from the center to the outer surface is -14- This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) --- ----- Order -------- ^-line · (Please read the notes on the back before filling out this page) 573082 A7 B7 Printed by the Consumers ’Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs ) Degree distribution is also roughly uniform. In other words, the crystal pulling machine of this embodiment can provide a vertical thermal gradient of the silicon single crystal ingot 25, in which the temperature of each part is averaged to prevent thermal stress from occurring on the silicon single crystal ingot 25, so the slip process of the product and the A dislocation process can be avoided. Fig. 3 shows a heat shielding member 36 of a crystal pulling machine for pulling a silicon single crystal from a silicon melt in a second preferred embodiment of the present invention. In this figure, the same components as those shown in Figure 2 are denoted by the same code. In the present embodiment, two protruding heat conductors 48 are provided on the protruding portion 41, so that the outer edge of each of the heat conducting ribs 48 is connected to the pipe body 37 or the inclined outer wall 45, and the inner edge is pseudo-connected to the vertical wall 44. Or inclined inner wall 43. When the thermal insulator 47 is filled in the protruding portion 41, the thermal conductor 48 is also placed in the protruding portion 41 together with the thermal insulator 47. That is, the heat conductor 48 is placed in the space formed by the lower part of the pipe body 37, the inclined outer wall 45, the bottom wall 42, and the inclined outer wall 45, and then the integrally formed vertical wall 44 and the top wall 46 are installed with bolts or pins. On the inclined inner wall 43 and the pipe body 37. Therefore, the heat conductor 48 traverses the inside of the protruding portion 41, wherein the outer peripheral surface of each component is connected to the pipe body 37, and the inner edge is connected to the vertical wall 44 or the inclined inner wall 43. The heat shielding member 36 prepared as described above can suppress a sudden drop in the temperature of the outer peripheral surface of the silicon single crystal ingot 25. In the process of pulling out the silicon crystal from the silicon melt, the vertical wall 44 or the inclined inner wall 43 is pseudo-heated by the radiant heat of the inner wall of the quartz crucible 13 or the thermal energy emitted from the heater. In this case, the crystal pulling machine of this embodiment can transfer the heat of the pipe body 37 or the inclined outer wall 45 to the vertical wall 44 or the inclined inner wall 43 through the thermal conductor 48, thereby effectively increasing the temperature of the vertical wall 44 and the inclined inner wall 43. . Therefore, the heated vertical wall 44 or inclined inner wall 43 will help-(Please read the precautions on the back before filling out this page) # 装 -l · 定 · This paper size applies to China National Standard (CNS) A4 specifications ( 210 X 297 mm) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 573082 A7 B7 V. Description of the invention (13) The heat radiation of the silicon single crystal ingot 25 is released, which can prevent the temperature of the outer surface of the silicon single crystal ingot 25 Plunge. The thickness image of each heat conductor 48 depends on the number of heat conductors 48. However, it is preferred that the range be between 6 and 9 minutes. Further details of the operating characteristics of the crystal pulling machine of this embodiment are substantially the same as those of the first embodiment, so they will not be described in detail. In the above embodiment, the pipe body 37 of the heat shielding member 36 is pseudo-cylindrical. As shown in Figure 4, it can also be made into a circular truncated cone hollow body with decreasing diameter, which gradually decreases downward. In this case, the gap between the outer peripheral portion of the silicon single crystal ingot 25 and the outer peripheral surface of the pipe body 37 will gradually expand toward the silicon melt 12, so that the inert gas cross passing through the space can be smoothly introduced into the silicon melt 12 With the protrusion 41. As shown in FIG. 5 (a), on the other hand, the pipe body 37 may include an inner pipe portion 37a, an outer pipe portion 37b, and a thermal insulator 37c filled between the inner and outer pipe portions 37a and 37b. The thermal insulator 37c provided in the double-walled structure of the pipe body 37 restricts the heat radiation from the inner peripheral wall of the quartz crucible 13 to the silicon single crystal bond 25. Furthermore, the inclined inner wall 43 of the above embodiment is disposed between the vertical wall 44 and the bottom wall 42, and the inclined outer wall 45 is disposed between the pipe body 47 and the bottom wall 42. As shown in Fig. 6, the inclined inner wall 45 is provided only between the vertical wall 44 and the bottom wall 42 without providing an inclined outer wall. As shown in Figure 7, the outer peripheral wall is inclined
Ikl 45只設在管體37與底壁42之間而不提供傾斜内壁。再者， 底壁本身可作成圓錐形，具有與管髏37底緣相接之外緣及 延伸至矽單結晶晶錠外周面近端之内緣，而不需提供傾斜 内壁43及傾斜外壁45,如第8圖所示，底壁42可相對於水 平面作80度以下之α角（cx>0),朝下之直徑遞減。如第9 -16 - 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ------·ί1ι!-----會--------訂--------：_ 線· (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 573082 A7 B7 五、發明說明（14 ) 圖所示，底壁42亦可以相對於平面作80度以下之0角度 (θ>0),朝上之直徑遞減。 · 另外，底壁可作成第8與第9圖之結構之組合之圓錐 形。換言之，底壁42可包括一外底壁42a及内底壁42b,外 底壁42a之緣部僳連接管體36,而内底壁42b之緣部係連 接於垂直構件44。外底壁42a可相對於平面作80度之傾斜 角（α>0)傾斜，朝下之直徑遞減。另一方面，内底壁42b 可相對於平面作80度以下之Θ角度（θ>0)傾斜，朝上之直 徑遞減。第4至第10圖中所示之任一種熱遮蔽構件均可利 用晶錠25上之熱輻射反射至突起部41之垂直壁44而防止矽 單結晶晶錠25外周部之溫度驟降，或因高溫加熱器18及矽 熔體而使突起部41之溫度上升。 以下將詳細說明本發明之實際例及比較例。 [實施例1] 一種如第1圖及第2圖所示之相同構造之用以從矽熔 體中提拉矽結晶之拉晶機之熱遮蔽構件36,其構造如下。 熱遮蔽構件36之管體37之内徑為410mm,高度為420 mm。 在管體37下端部設有由傾斜外壁45,底壁42,傾斜内壁43 ,垂直壁44,頂壁46等所構成之突起部41。突起部41傜呈 管狀，其中垂直壁44之傾斜度為零（卽與管體37之周面平 行），内徑為250ιπιη,高度為40mm。傾斜内壁43之下端之内 徑為330mm,傾斜度”α”為45度，垂直距離”L”為40πιπ»。 此外，底壁42之下側面與矽熔體12表面之間距為35mffl, 而垂直壁44之間距”W1”為20inro。在此實施例中，所有構件 -17- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁)Ikl 45 is provided only between the pipe body 37 and the bottom wall 42 and does not provide a sloped inner wall. Furthermore, the bottom wall itself can be made conical, with an outer edge connected to the bottom edge of the pipe cross 37 and an inner edge extending to the proximal end of the outer peripheral surface of the silicon single crystal ingot without the need to provide the inclined inner wall 43 and the inclined outer wall 45 As shown in Figure 8, the bottom wall 42 can make an angle α (cx > 0) below 80 degrees with respect to the horizontal plane, and the diameter decreases downward. Such as Section 9 -16-This paper size applies Chinese National Standard (CNS) A4 (210 X 297 mm) ------ · ί1ι! ----- 会 -------- Order- -------: _ Line · (Please read the notes on the back before filling out this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 573082 A7 B7 V. Description of the invention (14) The bottom wall 42 can also make a 0 angle (θ > 0) below 80 degrees with respect to the plane, and the diameter decreases upward. · In addition, the bottom wall can be made into a conical shape with a combination of the structure shown in Figures 8 and 9. In other words, the bottom wall 42 may include an outer bottom wall 42a and an inner bottom wall 42b. An edge of the outer bottom wall 42a is connected to the pipe body 36, and an edge of the inner bottom wall 42b is connected to the vertical member 44. The outer bottom wall 42a can be inclined at an inclination angle (α > 0) of 80 degrees with respect to the plane, and the diameter decreases downward. On the other hand, the inner bottom wall 42b may be inclined at an angle θ (θ > 0) of 80 degrees or less with respect to the plane, and the diameter thereof may be gradually decreased toward the upper side. Any of the heat shielding members shown in FIGS. 4 to 10 can use the heat radiation on the ingot 25 to reflect to the vertical wall 44 of the protrusion 41 to prevent the temperature of the outer peripheral portion of the silicon single crystal ingot 25 from dropping suddenly, or The temperature of the protrusion 41 is increased by the high-temperature heater 18 and the silicon melt. Hereinafter, practical examples and comparative examples of the present invention will be described in detail. [Embodiment 1] A heat shield member 36 of a crystal pulling machine for pulling silicon crystals from a silicon melt with the same structure as shown in Figs. 1 and 2 has the following structure. The inner diameter of the tube body 37 of the heat shielding member 36 is 410 mm and the height is 420 mm. The lower end of the pipe body 37 is provided with a protruding portion 41 composed of an inclined outer wall 45, a bottom wall 42, an inclined inner wall 43, a vertical wall 44, a top wall 46, and the like. The protrusion 41 傜 has a tubular shape, in which the inclination of the vertical wall 44 is zero (卽 is parallel to the peripheral surface of the pipe body 37), the inner diameter is 250 μm, and the height is 40mm. The inner diameter of the lower end of the inclined inner wall 43 is 330 mm, the inclination "α" is 45 degrees, and the vertical distance "L" is 40 ππ ». In addition, the distance between the lower side of the bottom wall 42 and the surface of the silicon melt 12 is 35 mffl, and the distance “W1” between the vertical walls 44 is 20 inro. In this example, all the components -17- This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page)
經濟部智慧財產局員工消費合作社印製 573082 A7 _ B7 五、發明說明（15) 37，45, 42, 43, 44及46均為碩材料製成。因此，所取 得之熱遮蔽構件被安裝於拉晶機用以從矽熔體中提拉矽結 晶，而該拉晶機僳被稱為實施例1,用以提供以下所述之 比較測試及評估。 [實施例2] 一種如第3圖所示之相同構造之用以從矽熔髏中提拉 矽結晶之拉晶機之熱遮蔽構件36,其構造與實施例1者相 同，唯一不同在於：在突起部41内倒横設有二個環狀熱導 體48,其中各該熱導體之外周緣係連接至管體37,而内緣 係連接至傾斜内壁43。因此，所取得之熱遮蔽構件僳被安 裝於拉晶機用以從矽熔髏中提拉矽結晶，而該拉晶機係被 稱為簧施例2,用以提供以下所述之比較測試及評估。 [比較例1 ] 一種用以從矽熔體中提拉矽結晶之拉晶機之熱遮蔽構 件36,其構造與實施例1者相同，唯一不同在於：在管體 37之下端部（未予圖示）不設突起部41。因此，所取得之熱 遮蔽構件僳被安裝於拉晶機用以從矽熔體中提拉矽結晶， 而該拉晶機偽被稱為比較例1 ,用以提供以下所述之比較測 試及評估。 [fckr較測試及評估] 使用熱導分析程式進行電腦模擬。 首先，利用電腦模擬下列條件。即各該實施例1,實施 例2 ,及比較例1之拉晶機係用以從矽熔體中提拉直徑為 210mm之矽單結晶晶錠。當晶錠之頂部被提拉至矽熔體表 -18 - 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 。 ----------------訂-------- (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 573082 A7 B7 五、發明說明（16) 面以上400mm時，模擬矽單結晶晶錠之溫度分佈，並使用 熱導分析程式予以計算。然後電腦將計算相對於矽單結晶 晶錠中心徑向至其外周面之距離之G/Gc變化。其中，”G” 像代表相對於矽單結晶晶錠各部份在矽熔體表面以上高達 30mm之高度之垂直溫度分佈之平均值。而” Gc”#指相對於 矽單結晶晶錠中心在矽熔體表面以上高達30 mm之高度之垂 直溫度分佈之平均值。上述計算結果繪製於第11圖。 如第11圖所示，實施例1及實施例2所取得之G/Gc值 繪成之曲線較之比較例1者具有較平緩之斜度。至於實施 例1及實施例2,無法察覺矽單結晶晶錠外周面之G/Gc值之 急劇變化。卽在垂直溫度斜率之徑向溫度分佈相當均勻。 各實施例1及實施例2均可藉助將晶錠之熱輻射反射至突 起部41之垂直壁或利用高溫加熱器18及矽熔體以提升突起 部41之溫度等方式防止矽單結晶晶錠外周部之溫度驟降。 再者，實施例2之垂直溫度斜率之徑向溫度分佈比實 施例1者更為均勻。 於此場合，可想像實施例2之拉晶機可通過熱導體48 將管體37或傾斜外壁45之熱量傳遞至垂直壁44或傾斜内壁 43,藉以提供垂直壁44及傾斜内壁43更有效之升溫作用。 因此升溫之垂直壁44或傾斜内壁43可進一步防止矽單結晶 晶錠25之熱輻射，可避免矽單結晶晶錠25外周部之溫度驟 降。 如前所述，本發明之優點在於該熱遮蔽構件之管體下 部設有瑱充熱絶緣體之突起部。突起部像向内突出，其底 -1 9 - 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 7---^-------^裝--------訂--------線· (請先閱讀背面之注意事項再填寫本頁) 573082 A7 __B7_ 五、發明說明（17 ) 壁像朝向矽熔體。突起部係由底壁，垂直壁及頂壁所構成 。底壁之形狀作成環狀或錐形，外緣係連接至管體之下緣 。底壁將水平延伸或以預定傾斜角度延伸至矽單結晶晶録 之外周面之近端。垂直壁傺設在矽單結晶晶錠外周面之預 定距離，並連接至底壁之内緣。垂直壁僳沿著平行於矽單 結晶晶錠軸心之方向延伸或相對於矽單結晶晶錠軸心呈預 定角度延伸。頂壁之下緣僳連接至垂直壁上緣，而其上綠 係連接至管體之内周面。頂壁可朝上而直徑遞減之方式延 伸。因此，矽單結晶晶錠外周面之熱輻射將受突起部之垂 直壁之反射，或受高溫矽熔體之熱輻射而升溫之突起部之 溫度影響而受抑制。於是，突起部之構造可防止矽單結晶 晶錠之外周面之湄度驟降現象。結果從該晶錠之中心至外 周部之溫度分佈大致呈均勻。再者，該突起部可提供矽單 結晶晶錠中之垂直熱梯度，其中在任一部份之溫度之徑向 分佈大致均勻。由於可防止矽單結晶晶錠上之熱應力，産 品之滑差製程及第一錯位製程可免。 -----------^^^裝--------訂 *------l· l^^wi (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 直輻部。成輻mol 垂熱周降構熱 C10 成之外下偽之度於 構面錠劇壁堝溫介 係周晶急外坩之偽 好外晶度斜英部距 最錠結溫傾石起間 壁晶單之形或突之 内晶矽處錐體低壁 斜結止近圓熔降直 傾單防之之矽步垂 之矽可面減 ，一與 減，是介遞合進面 遞合於體徑場可周 徑場。液直此。外 直此射 _ 而於射錠 而於反體伸。反晶 上 C 所固延接之晶 朝接壁之下交壁結 該交内錠向之内單 ,之斜晶，壁斜矽 外壁傾該面底傾好 此底受偽方與受最 與將別一體將 壁射待另管射 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 經濟部智慧財產局員工消費合作社印製 573082 A7 B7 五、發明說明（18 ) 至30mm之範圍。於此場合，從該晶錠之熱輻射將被有效反 射而不會在其間發生接觸。 最好該外周緣連接至管體或傾斜外壁而内周緣連接至 垂直壁或傾斜内壁之至少一個環狀熱導體傺横向設在突起 部之内倒。於此場合，此種構造通過從管體傳導熱量或利 用石英坩堝之熱輻射加熱之傾斜外壁或通過熱導體利用加 熱器加熱垂直壁或傾斜内壁等方式，提供垂直壁及傾斜内 壁之溫度有效升高。因此，升溫之垂直壁或傾斜内壁將進 一步釋放矽單結晶晶錠之熱輻射，可防止矽單結晶晶錠外 周面之溫度驟降。最後，由於從矽熔體提拉之矽單結晶晶 錠之外周面之溫度驟降受突起部較高溫度之抑制，將更有 效防止矽單結晶晶錠上産生熱應力。 以上係參照較可取實施例詳細說明本發明，但精於此 藝者當可在不脱離本發明之精神之前提下作成其他變更態 樣，而所有變更態樣應被視為歸屬於本發明之申請專利範 圍之範躊。 〆 * 圖式之簡單說明 第1圖偽本發明之一較可取實施例之用以從矽熔體中 提拉矽結晶之拉晶機之剖視圖之一斷面剖視； 第2圖僳第1圖所示之拉晶機之熱遮蔽構件之擴大剖 視圖（第1圖中箭頭”A”所示）； 第3圖係本發明之另一較可取實施例之用以從矽熔體 中提拉矽結晶之拉晶機之熱遮蔽構件之部份剖視圖； 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) 訂--------線赢 573082 A7 B7 五、發明說明（19 ) 第4圔傺熱遮蔽構件之剖視圖，該熱遮蔽構件具有直 徑向下端逐漸縮小之管體； (請先閱讀背面之注意事項再填寫本頁) 第5圖像熱遮蔽構件之剖視圖，該熱遮蔽構件具有裝 填有熱絶綠體之管體； 第6圖傺具有管體之熱遮蔽構件之剖視圖，其中該管 體之突起部具有較大口徑之内壁部但不具有外壁部； 第7圖偽具有管體之熱遮蔽構件之剖視圖，其中該管 體之突起部具有較大口徑之外壁部但不具有内壁部； 第8圖僳具有管體之熱遮蔽構件之剖視圖，其中該管 體之突起部不具有傾斜之内壁部及外壁部，係作成圓錐形 沿著底壁向下之直徑逐漸縮減； 第9圖僳具有管體之熱遮蔽構^之剖視圖，其中該管 體之突起部不具有傾斜之内壁部及外壁部，僳作成圓錐形 沿著底壁向上之直徑逐漸縮減； 經濟部智慧財產局員工消費合作社印製 第10圖傺具有内外底壁之熱遮蔽構件之剖視圖；及 第11圖像相對於矽單結晶晶錠中心之徑向距離之G/Gc 之變化圖，其中”G”代表由矽熔體表面之垂直方向至矽熔 體上方30mm之高度之矽單結晶晶錠外周之溫度梯度之平均 值，而”Gc”代表由矽熔體表面之垂直方向至矽熔體上方30 ιππι之高度之矽單結晶晶錠中心之溫度梯度之平均值。 符號說明 10 一一 拉晶機 11 --容器 12 — 矽熔體 13 --石英坩堝 14 — 石墨支座 16 —支軸 -22- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱） 573082 A7 B7 五、發明說明（20 ) 經濟部智慧財產局員工消費合作社印製 17 - -驅 動 機 構 18 - -加 熱 器 19 - -熱 絶 緣 筒 21 - -外 殼 22 - -提 拉 裝 置 23 - 線 24 - -晶 籽 25 - -矽 CftY 卑 結 晶 晶鍵 28 - -氣 體 饋 入及排出裝置 29 - -饋 入 管 30 - -排 出 管 36 - -熱 遮 蔽 構 件 37 - -管 體 38 - -突 緣 41 - -突 起 部 42 - -底 壁 43 - -内 壁 44 - -垂 直 壁 45 - -傾 斜 外 壁 46 - -頂 壁 47 - -熱 絶 緣 體 48 - -熱 導 體 7 ---------------'訂--------線· (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 573082 A7 _ B7 V. Description of Invention (15) 37, 45, 42, 43, 44 and 46 are made of master materials. Therefore, the obtained heat shielding member is installed in a crystal pulling machine to pull silicon crystals from a silicon melt, and the crystal pulling machine is referred to as Example 1 to provide a comparative test and evaluation described below. . [Embodiment 2] A heat shield member 36 of a crystal pulling machine for pulling silicon crystals from a silicon melting cross with the same structure as shown in FIG. 3, the structure is the same as that of Embodiment 1, except that: Two annular heat conductors 48 are provided in the protrusion 41 in an inverted manner. The outer periphery of each heat conductor is connected to the pipe body 37, and the inner edge is connected to the inclined inner wall 43. Therefore, the obtained heat shielding member 僳 is installed in a crystal pulling machine to pull silicon crystals from the silicon melting cross. The crystal pulling machine is called a spring application example 2 to provide a comparative test described below. And evaluation. [Comparative Example 1] A heat shielding member 36 of a crystal pulling machine for pulling silicon crystals from a silicon melt, the structure is the same as that of Example 1, except that the end portion (not (Illustrated) No protrusion 41 is provided. Therefore, the obtained heat shielding member 僳 is installed in a crystal pulling machine to pull silicon crystals from a silicon melt, and the crystal pulling machine is pseudo-referred to as Comparative Example 1 to provide a comparative test and Evaluation. [fckr comparison test and evaluation] Computer simulation using thermal conductivity analysis program. First, the following conditions were simulated using a computer. That is, the crystal pulling machine of each of Example 1, Example 2, and Comparative Example 1 is used to pull a silicon single crystal ingot having a diameter of 210 mm from a silicon melt. When the top of the ingot is pulled up to the silicon melt table -18-This paper size applies to China National Standard (CNS) A4 (210 X 297 mm). ---------------- Order -------- (Please read the notes on the back before filling out this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 573082 A7 B7 V. Description of the invention When (16) plane is 400mm above, the temperature distribution of silicon single crystal ingot is simulated and calculated by using thermal conductivity analysis program. The computer will then calculate the G / Gc change relative to the distance from the center of the silicon single crystal ingot radially to its outer peripheral surface. Among them, "G" image represents the average value of the vertical temperature distribution with respect to each part of the silicon single crystal ingot on the surface of the silicon melt up to a height of 30 mm. "Gc" # refers to the average value of the vertical temperature distribution of the silicon single crystal ingot center with a height of up to 30 mm above the surface of the silicon melt. The above calculation results are plotted in Figure 11. As shown in FIG. 11, the curves drawn by the G / Gc values obtained in Examples 1 and 2 have a gentler slope than those in Comparative Example 1. As for Example 1 and Example 2, a sharp change in the G / Gc value on the outer peripheral surface of the silicon single crystal ingot was not observed.径向 The radial temperature distribution in the vertical temperature slope is quite uniform. In each of Examples 1 and 2, the silicon single crystal ingot can be prevented by reflecting the heat radiation of the ingot to the vertical wall of the protrusion 41 or by using the high-temperature heater 18 and the silicon melt to raise the temperature of the protrusion 41. The temperature in the outer periphery dropped sharply. Furthermore, the radial temperature distribution of the vertical temperature slope of Example 2 is more uniform than that of Example 1. In this case, it is conceivable that the crystal pulling machine of Embodiment 2 can transfer the heat of the pipe body 37 or the inclined outer wall 45 to the vertical wall 44 or the inclined inner wall 43 through the heat conductor 48, thereby providing the vertical wall 44 and the inclined inner wall 43 more effectively. Heating effect. Therefore, the heated vertical wall 44 or the inclined inner wall 43 can further prevent the heat radiation of the silicon single crystal ingot 25, and can prevent the temperature of the outer periphery of the silicon single crystal ingot 25 from falling sharply. As mentioned above, the present invention is advantageous in that the lower part of the tube body of the heat shielding member is provided with a projection of a heat-insulating insulator. The protruding part protrudes inward, and its bottom is -19.-This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 7 --- ^ ------- ^ pack ---- ---- Order -------- Line · (Please read the precautions on the back before filling this page) 573082 A7 __B7_ V. Description of the invention (17) The wall image faces the silicon melt. The protruding part is composed of a bottom wall, a vertical wall and a top wall. The shape of the bottom wall is annular or tapered, and the outer edge is connected to the lower edge of the pipe body. The bottom wall extends horizontally or at a predetermined inclined angle to the proximal end of the outer peripheral surface of the silicon single crystal crystal record. The vertical wall is set at a predetermined distance from the outer peripheral surface of the silicon single crystal ingot, and is connected to the inner edge of the bottom wall. The vertical niches extend in a direction parallel to the axis of the silicon single crystal ingot or at a predetermined angle with respect to the axis of the silicon single crystal ingot. The lower edge of the top wall is connected to the upper edge of the vertical wall, and the upper green line is connected to the inner peripheral surface of the pipe body. The top wall can be extended upwards with decreasing diameter. Therefore, the heat radiation on the outer peripheral surface of the silicon single crystal ingot will be suppressed by the reflection of the vertical wall of the protrusion, or the temperature of the protrusion which is heated by the heat radiation of the high temperature silicon melt. Therefore, the structure of the protrusions can prevent the sudden decrease of the Mae degree on the outer peripheral surface of the silicon single crystal ingot. As a result, the temperature distribution from the center to the periphery of the ingot was approximately uniform. Furthermore, the protrusion can provide a vertical thermal gradient in a silicon single crystal ingot, in which the radial distribution of the temperature in any portion is substantially uniform. Since the thermal stress on the silicon single crystal ingot can be prevented, the slip process and the first dislocation process of the product can be avoided. ----------- ^^^ 装 -------- Order * ------ l · l ^^ wi (Please read the notes on the back before filling this page) The Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs prints the Department of Direct Spokes. Radial mol, vertical thermal cycle, destructive heat, C10, and external pseudo-degrees in the surface of the ingot. The temperature of the ingots is in the surface of the ingot. The shape of the wall crystal single or the inner crystal of the cone is at the low wall of the cone. The oblique knot near the circle is melted down. The straight silicon single-step prevention silicon can be reduced by one. In the body track field can be around the track field. Liquid straight. Out of this straight shot _ while injecting the ingot and stretching in the opposite body. The crystal fixedly connected by C on the reverse crystal faces the wall below the junction wall and intersects the ingot inwardly. The oblique crystal, the oblique silicon wall tilts the surface and the bottom is tilted. The other will be integrated and the wall will be shot separately. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm). Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. 573082 A7 B7 V. Description of the invention (18) to 30mm range. In this case, the heat radiation from the ingot will be effectively reflected without contact between them. Preferably, at least one ring-shaped heat conductor 连接 which is connected to the pipe body or the inclined outer wall and the inner periphery is connected to the vertical wall or the inclined inner wall is provided laterally inside the protrusion. In this case, this structure provides effective temperature rise of the vertical wall and the inclined inner wall by conducting heat from the pipe body or heating the inclined outer wall by the thermal radiation of the quartz crucible or heating the vertical wall or the inclined inner wall by a heater through a heat conductor. high. Therefore, the heated vertical wall or inclined inner wall will further release the heat radiation of the silicon single crystal ingot, which can prevent the temperature of the outer surface of the silicon single crystal ingot from dropping sharply. Finally, because the temperature drop on the outer surface of the silicon single crystal ingot pulled from the silicon melt is suppressed by the higher temperature of the protrusions, it will be more effective to prevent thermal stress on the silicon single crystal ingot. The above is a detailed description of the present invention with reference to preferred embodiments, but those skilled in the art can make other changes without departing from the spirit of the present invention, and all changes should be deemed to belong to the present invention. The scope of patent application scope. 〆 * Brief description of the drawing. Fig. 1 is a cross-sectional view of a cross-sectional view of a crystal pulling machine for pulling silicon crystals from a silicon melt, which is a preferred embodiment of the present invention. Fig. 2 僳 1 The enlarged sectional view of the heat shielding member of the crystal pulling machine shown in the figure (shown by the arrow "A" in the first figure); Figure 3 is another preferred embodiment of the present invention for pulling from the silicon melt Partial cross-sectional view of the heat shielding member of the silicon crystal pulling machine; This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page) Order- ------ Line win 573082 A7 B7 V. Description of the invention (19) Section 4: Sectional view of the heat shielding member, which has a pipe body with a diameter gradually decreasing toward the lower end; (Please read the precautions on the back first (Fill in this page again.) Image 5 is a cross-sectional view of a heat-shielding member having a pipe body filled with a thermal insulator; FIG. 6 傺 cross-sectional view of a heat-shielding member having a pipe body, in which the protrusion of the pipe body It has a large-diameter inner wall but no outer wall; Figure 7 Sectional view of the heat shielding member of the body, wherein the protruding portion of the pipe body has a large-diameter outer wall portion but no inner wall portion; FIG. 8 僳 A sectional view of the heat shielding member having the pipe body, wherein the protruding portion of the pipe body is not The inclined inner wall portion and the outer wall portion are formed in a conical shape and the diameter is gradually reduced along the bottom wall; FIG. 9 is a cross-sectional view of a heat shielding structure of a pipe body, wherein the protrusion of the pipe body does not have an inclined The inner wall and outer wall are made conical and gradually decrease in diameter along the bottom wall; printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs, Figure 10, a cross-sectional view of a heat shielding member with inner and outer bottom walls; and image 11 The graph of the change in G / Gc relative to the radial distance of the center of the silicon single crystal ingot, where "G" represents the temperature of the outer periphery of the silicon single crystal ingot from the vertical direction of the silicon melt surface to a height of 30 mm above the silicon melt The average value of the gradient, and "Gc" represents the average value of the temperature gradient from the vertical direction of the surface of the silicon melt to the center of the silicon single crystal ingot at a height of 30 pmm above the silicon melt. Explanation of symbols 10 One crystal pulling machine 11-Container 12-Silicon melt 13-Quartz crucible 14-Graphite support 16-Support shaft -22- This paper size applies to China National Standard (CNS) A4 (210 X 297) (Public love) 573082 A7 B7 V. Description of the invention (20) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 17--Drive mechanism 18--Heater 19--Thermal insulation tube 21--Shell 22--Lifting device 23 -Line 24--Seed 25--Silicon CftY Crystalline Bond 28--Gas Feeding and Discharging Device 29--Feeding Tube 30--Discharging Tube 36--Thermal Shielding Member 37--Tube 38-- Edge 41--protrusion 42--bottom wall 43--inner wall 44--vertical wall 45--inclined outer wall 46--top wall 47--thermal insulator 48--thermal conductor 7 -------- ------- 'Order -------- Line · (Please read the precautions on the back before filling this page) This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) )