CN110379916A - The preparation method of piezo ceramic element - Google Patents
The preparation method of piezo ceramic element Download PDFInfo
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- CN110379916A CN110379916A CN201910603204.7A CN201910603204A CN110379916A CN 110379916 A CN110379916 A CN 110379916A CN 201910603204 A CN201910603204 A CN 201910603204A CN 110379916 A CN110379916 A CN 110379916A
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- 239000000919 ceramic Substances 0.000 title claims abstract description 104
- 238000002360 preparation method Methods 0.000 title description 6
- 238000000034 method Methods 0.000 claims abstract description 38
- 238000012545 processing Methods 0.000 claims abstract description 15
- 230000010354 integration Effects 0.000 claims abstract description 8
- 238000009413 insulation Methods 0.000 claims abstract description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 24
- 239000000126 substance Substances 0.000 claims description 17
- 238000007747 plating Methods 0.000 claims description 15
- 230000010287 polarization Effects 0.000 claims description 14
- 229910052759 nickel Inorganic materials 0.000 claims description 12
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 11
- 239000011135 tin Substances 0.000 claims description 11
- 229910052718 tin Inorganic materials 0.000 claims description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 239000010949 copper Substances 0.000 claims description 7
- 239000006071 cream Substances 0.000 claims description 5
- 238000011049 filling Methods 0.000 claims description 5
- 238000003466 welding Methods 0.000 claims description 5
- 239000004568 cement Substances 0.000 claims description 4
- 238000001465 metallisation Methods 0.000 claims description 4
- 239000011230 binding agent Substances 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 230000008569 process Effects 0.000 claims description 3
- 238000006263 metalation reaction Methods 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 9
- 238000004140 cleaning Methods 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000008367 deionised water Substances 0.000 description 4
- 229910021641 deionized water Inorganic materials 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000003801 milling Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical group [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 244000137852 Petrea volubilis Species 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- KWSLGOVYXMQPPX-UHFFFAOYSA-N 5-[3-(trifluoromethyl)phenyl]-2h-tetrazole Chemical compound FC(F)(F)C1=CC=CC(C2=NNN=N2)=C1 KWSLGOVYXMQPPX-UHFFFAOYSA-N 0.000 description 2
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910052573 porcelain Inorganic materials 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 229910001379 sodium hypophosphite Inorganic materials 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- YXLXNENXOJSQEI-UHFFFAOYSA-L Oxine-copper Chemical compound [Cu+2].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 YXLXNENXOJSQEI-UHFFFAOYSA-L 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 235000019270 ammonium chloride Nutrition 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000739 chaotic effect Effects 0.000 description 1
- 238000005660 chlorination reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- TVQLLNFANZSCGY-UHFFFAOYSA-N disodium;dioxido(oxo)tin Chemical compound [Na+].[Na+].[O-][Sn]([O-])=O TVQLLNFANZSCGY-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000693 micelle Substances 0.000 description 1
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 description 1
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- PIBWKRNGBLPSSY-UHFFFAOYSA-L palladium(II) chloride Chemical compound Cl[Pd]Cl PIBWKRNGBLPSSY-UHFFFAOYSA-L 0.000 description 1
- 238000005554 pickling Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000001509 sodium citrate Substances 0.000 description 1
- NLJMYIDDQXHKNR-UHFFFAOYSA-K sodium citrate Chemical compound O.O.[Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NLJMYIDDQXHKNR-UHFFFAOYSA-K 0.000 description 1
- 229940079864 sodium stannate Drugs 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
- 230000010148 water-pollination Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/05—Manufacture of multilayered piezoelectric or electrostrictive devices, or parts thereof, e.g. by stacking piezoelectric bodies and electrodes
- H10N30/057—Manufacture of multilayered piezoelectric or electrostrictive devices, or parts thereof, e.g. by stacking piezoelectric bodies and electrodes by stacking bulk piezoelectric or electrostrictive bodies and electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
- H10N30/085—Shaping or machining of piezoelectric or electrostrictive bodies by machining
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
- H10N30/085—Shaping or machining of piezoelectric or electrostrictive bodies by machining
- H10N30/086—Shaping or machining of piezoelectric or electrostrictive bodies by machining by polishing or grinding
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Transducers For Audible Bands (AREA)
- Transducers For Ultrasonic Waves (AREA)
Abstract
A method of piezo ceramic element is prepared, includes the following steps: that (1) carries out fillet processing to two diagonal ribs of the piezoelectric ceramic piece of cuboid；(2) it metallizes to by the surface of step (1) treated piezoelectric ceramic piece；(3) piezoelectric ceramic piece that step (2) is obtained, with two parallel two others of diagonal rib diagonal rib progress chamfered by fillet processing；(4) piezoelectric ceramic piece that integration step (3) obtains forms the piezoelectric ceramic stack for having fillet slot and chamfering slot；(5) conductive protection is carried out to the fillet slot and insulation protection is carried out to the chamfering slot；(6) it metallizes to by the surface of step (5) treated piezoelectric ceramic stack, to form conductive layer；(7) remove the conductive layer at the upper and lower surfaces by step (6) treated piezoelectric ceramic stack at the position with chamfering.Method of the invention does not need excessively to weld, and increases the safety of piezo ceramic element.
Description
Technical field
The invention belongs to piezoelectric ceramic technology fields.In particular it relates to a kind of achievable arbitrary polarisation direction pressure
The preparation method of electroceramics element.
Background technique
With the development of electromechanical integration, Piezoelectric Ceramic element plays more and more important work in electromechanical transformation
With for example as the driver of stepper motor in scanning tunneling microscope.But often efficiency is very low for the piezoelectric ceramics of monolithic, especially
It is under low temperature, the piezoelectric modulus of piezoelectric ceramics declines significantly, therefore the piezo ceramic element being made of multilayer piezoelectric ceramic obtains
To being more widely applied.Further, since the offset of monolithic piezoelectric ceramic is too small, tend not to meet the needs of using, because
This multilayer piezoelectric ceramic, which cooperates, becomes the most common use form.
The piezoelectric ceramics of longitudinal polarization can before sintering be added electrode, the polarized method of making alive after sintering
It is made into piezoelectric ceramic stack.The electricity of needs is usually first arranged now for the manufacture craft of longitudinal polarization piezo ceramic element
Pole is then mixed into piezoelectric ceramic powder, finally re-sinters, and can produce required electrode form in this way, finally adds between electrode
High pressure polarizes.But this technique is only applicable to the piezo ceramic element of longitudinal polarization due to being finally to polarize.
For shear-polarization piezoelectric ceramics due to polarize perpendicular to thickness direction added electric field, cannot be with longitudinal
The method of polarized sintered electrode is handled, and method before is only polarized piezoelectric ceramics corner cut bonding wire or
Among polarized piezoelectric ceramics plus conductive sheet and connection electrode.Both methods can make in piezoelectric ceramic stack between electrode
Lead is various and chaotic.It is most commonly that first now for the manufacture craft of tangential piezoelectric ceramic component the tangential pole of piezoelectric ceramics
Change, then puts piezoelectric ceramic piece according to the opposite sequence of adjacent piezoelectric ceramic piece polarization direction, centre insertion electrode slice,
Electrode slice wants some to stretch out piezoelectric ceramic stack, so as to lead use, then piezoelectric ceramic piece and electrode slice is welded or is bonded
To together, being made into one group of piezoelectric ceramic stack.In use, applying opposite voltage to the electrode slice of adjacent layer, piezoelectricity can be realized
The offset in ceramic stack shear-polarization direction.But the route of such process requirement later period welding is more, it is especially many in the number of plies
In the case where, and line the space occupied of the electrode and welding stretched out is larger, between each other and between device other parts
There is the danger of short circuit, is unfavorable for using in the lesser equipment in space.
In short, a kind of piezo ceramic element technique that is easier, safer, can have any polarization direction is urgently
Occur.
Summary of the invention
The object of the present invention is to provide the piezo ceramic elements that a kind of preparation of easy safety has any polarization direction
Method.
Above-mentioned purpose of the invention is realized by following technological means.
In the context of the present invention, term " diagonal rib " refers to that two not on the same surface of cuboid are mutual
Parallel rib.
The present invention provides a kind of method for preparing piezo ceramic element, includes the following steps:
(1) fillet processing is carried out to two diagonal ribs of the piezoelectric ceramic piece of cuboid；
(2) it metallizes to by the surface of step (1) treated piezoelectric ceramic piece, to form conductive layer；
(3) piezoelectric ceramic piece that step (3) is obtained, with by fillet processing two diagonal ribs it is parallel other two
The diagonal rib of item carries out chamfered；
(4) piezoelectric ceramic piece that integration step (3) obtains forms the piezoelectric ceramic stack for having fillet slot and chamfering slot；Institute
Stating integration is the polarization direction of adj acent piezoelectric potsherd is opposite, fillet of adj acent piezoelectric potsherd connects with fillet and adjacent pressure
What the chamfering of electroceramics piece carried out under conditions of connecting with chamfering；
(5) conductive protection is carried out to the fillet slot and insulation protection is carried out to the chamfering slot；
(6) it metallizes to by the surface of step (5) treated piezoelectric ceramic stack, to form conductive layer；
(7) remove the position with chamfering at the upper and lower surfaces by step (6) treated piezoelectric ceramic stack
The conductive layer at place.
In the method for the invention, it is carried out to the diagonal rib of two parallel two others of diagonal rib by fillet processing
Chamfered is the electrical connection in order to disconnect upper and lower two surfaces, and two surfaces are perpendicular to required electric field up and down herein
Surface.
Preferably, in method of the present invention, the metallization is to form chemical deposit by chemical plating to make table
Face metallization；It is highly preferred that the chemical deposit is formed by nickel or copper；It is highly preferred that the chemical deposit with a thickness of
0.5-5μm。
Preferably, in method of the present invention, the method also includes after the step (2) to passing through surface metal
Piezoelectric ceramic piece after change carries out the step of plating forms electroplated layer；It is highly preferred that the electroplated layer is by copper, gold, tin or nickel
It is formed；It is highly preferred that the electroplated layer with a thickness of 1-10 μm.
Preferably, in method of the present invention, the integration piezoelectric ceramic piece in the step (4) is to pass through binder
It carries out bonding or scolding tin welds progress.
Preferably, in method of the present invention, the conductive protection in the step (5) be by using conducting resinl or
The filling of person's tin cream carries out；Insulation protection in the step (5) is carried out by using insulating cement or insulating trip filling.
Beneficial effects of the present invention:
1. method of the invention handles polarized piezoelectric ceramics, the piezoelectricity pottery of any polarization direction can be prepared
Porcelain element；
2. method of the invention is not required between piezoelectric ceramics and outside increases electrode, the body of element is greatly reduced
Product, saves the space of device；
3. method of the invention does not need the later period and carries out excessive welding, the repeatable of piezo ceramic element is substantially increased
Property；
4. piezo ceramic element prepared by method of the invention is safer, more stable.
Detailed description of the invention
Hereinafter, carrying out the embodiment that the present invention will be described in detail in conjunction with attached drawing, in which:
Fig. 1 is the structure of the piezoelectric ceramic stack based on the preparation of shear-polarization potsherd according to an embodiment of the invention
Schematic diagram；
Fig. 2 is the schematic diagram of shear-polarization piezoelectric ceramic piece according to an embodiment of the invention；
Fig. 3 is the schematic diagram of piezoelectric ceramic piece boundary fillet processing according to an embodiment of the invention；
Fig. 4 is the schematic diagram of piezoelectric ceramic piece surface metalation processing according to an embodiment of the invention；
Fig. 5 is the schematic diagram of piezoelectric ceramics plate electrode chamfered according to an embodiment of the invention；
Fig. 6 is the schematic diagram for integrating piezoelectric ceramic piece according to an embodiment of the invention；
Fig. 7 is showing for piezoelectric ceramic stack boundary conductive protection according to an embodiment of the invention and insulation protection processing
It is intended to；
Fig. 8 is the schematic diagram of connection of metallizing between piezoelectric ceramic stack electrode according to an embodiment of the invention；
Fig. 9 is the schematic diagram of piezoelectric ceramic stack electrode chamfered according to an embodiment of the invention.
Specific embodiment
The present invention is further described in detail With reference to embodiment, and the embodiment provided is only for explaining
The bright present invention, the range being not intended to be limiting of the invention.
Fig. 1 is the structure of the piezoelectric ceramic stack based on the production of shear-polarization potsherd according to an embodiment of the invention
Schematic diagram.The piezoelectric ceramic stack preparation process of one embodiment of the invention includes the following steps:
As shown in Fig. 2, the piezoelectric ceramic piece 1 of shear-polarization is chosen, it is of course also possible to select longitudinal polarization or other
The piezoelectric ceramic piece of polarization direction.It is cut to required cuboid.
As shown in figure 3, profile processing is carried out to aforementioned piezoelectric ceramic piece 1, by the way of mechanical grinding, corner rounding(milling) cutter milling
Fillet processing 2 is carried out to the diagonal rib for a pair of of the piezoelectric ceramic piece arbitrarily chosen.
As shown in figure 4, using chemical plating bottoming to 1 surface of piezoelectric ceramic piece through above-mentioned processing, the method thickened is electroplated
Coat one layer of metal conducting layer 3.Wherein, chemical plating needs successively to carry out acetone, alcohol, deionized water ultrasound to piezoelectric ceramic piece
Oil removing is cleaned, is then dried with nitrogen, carries out roughing in surface, deionized water cleaning later；It is activated again, deionized water cleaning,
Then it is dried with nitrogen, dries；Then chemical nickel plating or copper are carried out.It needs before plating to the piezoelectric ceramics through chemical plating
Piece 1 successively carries out oil removing, cleaning, pickling removal surface oxide layer, then cleans again.
As shown in figure 5, being carried out at chamfering to the diagonal rib of two parallel two others of diagonal rib by fillet processing
Reason 4, to disconnect the electrical connection of upper and lower surface.Wherein, chamfering can be using modes such as mill, millings.
As shown in fig. 6, being stacked to integrating in sequence through the aforementioned piezoelectric ceramic piece handled well together, the integration is
According to the polarization direction of adj acent piezoelectric potsherd, opposite, adj acent piezoelectric potsherd fillet connects with fillet and adj acent piezoelectric is ceramic
What the sequence that the chamfering of piece connects with chamfering carried out.Then piezoelectric ceramic stack is bonded using binder or solder(ing) paste mode
Or welding 5.
It is led as shown in fig. 7, the slot (fillet slot) left at the fillet formed to the piezoelectric ceramic stack through above-mentioned processing utilizes
Electric glue or tin cream filling carry out conductive protection 6.The slot (chamfering slot) left at chamfering is filled out using insulating cement or insulating trip
It is charged into row insulation protection 7.
As shown in figure 8, to above-mentioned processed piezoelectric ceramic stack edge grinding process, then chemical plating bottoming is carried out, it is electroplated
Thickening (specific embodiment is identical as method shown in Fig. 4) makes the surface of piezoelectric ceramic stack cover one layer of conductive layer 8.
As shown in figure 9, removing extra lead using modes such as polishing, milling, corrosion to above-mentioned processed piezoelectric ceramic stack
Electric layer 9 such as removes leading at the position at the upper and lower surfaces by treated piezoelectric ceramic stack with chamfering
Electric layer, to disconnect the electrode of different electrical signals.
Embodiment 1
4 shear-polarization piezoelectric ceramics are selected, to make the piezoelectric ceramic stack of shear-polarization comprising following steps:
Choose the PZT8 piezoelectric ceramic piece 1 of the rectangle shear-polarization of 4 55 × 5 × 0.5mm.
By it is every it is a piece of it is middle choose a pair of perpendicular to polarization direction and two opposite long sides, be polished into half using sand paper
The fillet of diameter 0.1mm.
By one layer of bottom nickel of surface chemical plating of treated 4 piezoelectric ceramics.Method particularly includes: first by 4 piezoelectricity
Ceramics are ultrasonically treated 5 minutes in acetone, alcohol, deionized water respectively to be had reached to the clean effect of surface degreasing, is then set
3 minutes are handled in chemical coarsening solution (10% fluoboric acid) to improve the hydrophily on piezoelectric ceramics surface and improve surface roughness
To guarantee the adhesive force of coating；The acid that clean the surface persists is subsequently placed in colloidal pd activation solution (1g/L palladium chloride, 75g/L chlorination
Stannous, 7g/L sodium stannate, 300mL/L hydrochloric acid) middle activation 15 minutes, cleaning is placed in solution glue (30g/L sodium hypophosphite),
Stannous micelle around palladium atom to remove piezoelectric ceramics adsorption, is exposed palladium, is put into after cleaning again
50 DEG C low temperature chemcial plating nickel liquid (20g/L nickel sulfate, 30g/L sodium hypophosphite, 30g/L ammonium chloride, 10g/L sodium citrate,
30mL/L ammonium hydroxide) in plating 10min, obtain 2-3 μm of nickel layer.Certainly, in other embodiments, those skilled in the art
Electroless copper can be carried out to replace chemical nickel plating.Then, 10 μm or so are electroplated on the basis of nickel layer using electro-plating method
Bright copper, to improve the electric conductivity and mechanical strength of conductive layer 3.Certainly, in other embodiments, those skilled in the art can
To be electroplated using gold, tin or nickel.
With reference to Fig. 5, the two other side of the non-angle rounding in every a piece of piezoelectric ceramic piece as the aforementioned in 4 longest edges
It falls the angle 4 of 0.1mm in the way of sand paper polishing, disconnects bilevel conductive layer.
With reference to Fig. 6,4 piezoelectric ceramic piece upper and lower surfaces above-mentioned are uniformly coated with tin cream 5, then according to adjacent pressure
Electroceramics piece polarization direction on the contrary, and fillet connect with fillet, the sequence that chamfering connects with chamfering is stacked, be put into plus
Be heated slowly to 250 DEG C in hot tank, maintain 30 minutes, melt tin cream, can be obtained after cooling be welded as a whole with a thickness of
2.2mm piezoelectric ceramic stack finally cleans out the scolding tin and scaling powder of spilling.
With reference to Fig. 7, treated piezoelectric ceramic stack side can exist 3 due to fillet formed arc grooves (that is,
Fillet slot) and 3 triangular grooves (that is, chamfering slot) formed due to chamfering, the arc groove 6 of fillet is filled and led up with conducting resinl,
The triangular groove 7 at chamfering is filled and led up with insulating cement, finally side polishes flat.
With reference to Fig. 8, by the above-mentioned piezoelectric ceramic stack handled well again in one layer 2-3 μm of surface chemical plating of bottom nickel, then
One layer 10 μm of bright copper 8 (processing method is identical as method shown in Fig. 4) is electroplated to realize the electrical connection of all electrodes.
With reference to Fig. 9, the chamfering 9 of the upper and lower surfaces of treated piezoelectric ceramic stack is polishing to down with sand paper
Conductive layer on angle falls off, and disconnects the electrical connection of the electrode of the unlike signal of piezoelectric ceramic stack.
Finally, the piezoelectric ceramic stack of 55mm long to be cut into the piezoelectric ceramic stack of 10 5 × 5mm, and make pottery in each piezoelectricity
Piece conducting wire of each side soldering of porcelain heap, as electrode input, so far the piezoelectric ceramic stack with shear-polarization has been made
At.
So far, although those skilled in the art will appreciate that present invention has been shown and described in detail herein multiple shows
Example property embodiment still without departing from the spirit and scope of the present invention, still can according to the present disclosure directly
Determine or deduce out many other variations or modifications consistent with the principles of the invention.Therefore, the scope of the present invention is understood that and recognizes
It is set to and covers all such other variations or modifications.
Claims (9)
1. a kind of method for preparing piezo ceramic element, includes the following steps:
(1) fillet processing is carried out to two diagonal ribs of the piezoelectric ceramic piece of cuboid；
(2) it metallizes to by the surface of step (1) treated piezoelectric ceramic piece, to form conductive layer；
(3) piezoelectric ceramic piece that step (2) is obtained, with the parallel two other pair of two diagonal ribs by fillet processing
Angle rib carries out chamfered；
(4) piezoelectric ceramic piece that integration step (3) obtains forms the piezoelectric ceramic stack for having fillet slot and chamfering slot；It is described whole
Conjunction is the polarization direction of adj acent piezoelectric potsherd is opposite, fillet of adj acent piezoelectric potsherd connects with fillet and adj acent piezoelectric pottery
What the chamfering of tile carried out under conditions of connecting with chamfering；
(5) conductive protection is carried out to the fillet slot and insulation protection is carried out to the chamfering slot；
(6) it metallizes to by the surface of step (5) treated piezoelectric ceramic stack, to form conductive layer；
(7) remove at the upper and lower surfaces by step (6) treated piezoelectric ceramic stack at the position with chamfering
Conductive layer.
2. according to the method described in claim 1, wherein, the metallization is to form chemical deposit by chemical plating to make surface
Metallization.
3. according to the method described in claim 2, wherein, the chemical deposit is formed by nickel or copper.
4. according to the method described in claim 2, wherein, the chemical deposit with a thickness of 0.5-5 μm.
5. according to the method described in claim 1, the method also includes after the step (2) and before step (3) to process
Piezoelectric ceramic piece after surface metalation carries out the step of plating forms electroplated layer.
6. according to the method described in claim 5, wherein, the electroplated layer is formed by copper, gold, tin or nickel.
7. according to the method described in claim 5, wherein, the electroplated layer with a thickness of 1-10 μm.
8. according to the method described in claim 1, wherein, the integration in the step (4) be carried out by binder bonding or
The welding of person's scolding tin carries out.
9. according to the method described in claim 1, wherein, the conductive protection in the step (5) be by using conducting resinl or
The filling of person's tin cream carries out；Insulation protection in the step (5) is carried out by using insulating cement or insulating trip filling.
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| AT237928B (en) * | 1962-08-30 | 1965-01-11 | Hans Dipl Ing Dr Techn List | Piezo element, in particular for piezoelectric force gauges |
| JPS61206281A (en) * | 1985-03-08 | 1986-09-12 | Toshiba Corp | Piezoelectric displacement element |
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