CN110379867A - 硅基异质结太阳电池叠瓦光伏组件及其制备方法 - Google Patents
硅基异质结太阳电池叠瓦光伏组件及其制备方法 Download PDFInfo
- Publication number
- CN110379867A CN110379867A CN201910622894.0A CN201910622894A CN110379867A CN 110379867 A CN110379867 A CN 110379867A CN 201910622894 A CN201910622894 A CN 201910622894A CN 110379867 A CN110379867 A CN 110379867A
- Authority
- CN
- China
- Prior art keywords
- busbar
- printing
- gate line
- main gate
- battery
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 27
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 27
- 239000010703 silicon Substances 0.000 title claims abstract description 27
- 239000000758 substrate Substances 0.000 title claims abstract description 24
- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- 238000000034 method Methods 0.000 claims abstract description 18
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052709 silver Inorganic materials 0.000 claims abstract description 15
- 239000004332 silver Substances 0.000 claims abstract description 15
- 238000013461 design Methods 0.000 claims abstract description 14
- 230000008569 process Effects 0.000 claims abstract description 13
- 238000003466 welding Methods 0.000 claims description 17
- 239000003292 glue Substances 0.000 claims description 7
- 230000001680 brushing effect Effects 0.000 claims description 5
- 238000003475 lamination Methods 0.000 claims description 4
- 230000011218 segmentation Effects 0.000 claims description 4
- 230000004992 fission Effects 0.000 claims description 3
- 230000035807 sensation Effects 0.000 claims description 3
- 238000005520 cutting process Methods 0.000 claims description 2
- 238000012360 testing method Methods 0.000 abstract description 4
- 238000005457 optimization Methods 0.000 abstract description 2
- 239000013078 crystal Substances 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 22
- 238000005516 engineering process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000004070 electrodeposition Methods 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 241001455226 Sauria Species 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000006071 cream Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0508—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module the interconnection means having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/074—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a heterojunction with an element of Group IV of the Periodic Table, e.g. ITO/Si, GaAs/Si or CdTe/Si solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
正面主栅银浆耗量 | 正面细栅银耗量 | 背面主栅银浆耗量 | 背面细栅银耗量 | 降本 | |
现有技术 | 95mg | 80mg | 90mg | 94mg | baseline |
实施例1 | 56.4mg | 84mg | 53.4mg | 98mg | -18.7% |
实施例2 | 33.8mg | 90mg | 21.4mg | 103mg | -30.9% |
实施例3 | 0mg | 95mg | 0mg | 108mg | -43.5% |
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201910622894.0A CN110379867A (zh) | 2019-07-11 | 2019-07-11 | 硅基异质结太阳电池叠瓦光伏组件及其制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201910622894.0A CN110379867A (zh) | 2019-07-11 | 2019-07-11 | 硅基异质结太阳电池叠瓦光伏组件及其制备方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN110379867A true CN110379867A (zh) | 2019-10-25 |
Family
ID=68252672
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201910622894.0A Pending CN110379867A (zh) | 2019-07-11 | 2019-07-11 | 硅基异质结太阳电池叠瓦光伏组件及其制备方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN110379867A (zh) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110828598A (zh) * | 2019-10-30 | 2020-02-21 | 江苏朗道新能源有限公司 | 一种半片叠瓦组件及其制作方法 |
CN110838527A (zh) * | 2019-10-30 | 2020-02-25 | 江苏朗道新能源有限公司 | 一种用于半片叠瓦光伏组件的电池片及该组件的制作方法 |
CN112885914A (zh) * | 2021-01-07 | 2021-06-01 | 昆山协鑫光电材料有限公司 | 钙钛矿hjt叠层叠瓦太阳能电池组件及其制备方法 |
WO2021217786A1 (zh) * | 2020-04-30 | 2021-11-04 | 浙江晶科能源有限公司 | 一种叠瓦组件网版结构 |
CN113921653A (zh) * | 2021-09-26 | 2022-01-11 | 中国华能集团清洁能源技术研究院有限公司 | 叠瓦光伏组件的制作方法 |
CN113921654A (zh) * | 2021-09-26 | 2022-01-11 | 中国华能集团清洁能源技术研究院有限公司 | 叠瓦光伏组件的制作方法 |
CN114373810A (zh) * | 2021-12-24 | 2022-04-19 | 新余赛维电源科技有限公司 | 光伏组件及制备方法 |
CN115799366A (zh) * | 2022-11-18 | 2023-03-14 | 江苏悦阳光伏科技有限公司 | 一种高功率太阳能组件 |
CN117276378A (zh) * | 2023-09-19 | 2023-12-22 | 隆基绿能科技股份有限公司 | 一种太阳能电池阵列 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN207542262U (zh) * | 2017-10-16 | 2018-06-26 | 泰州隆基乐叶光伏科技有限公司 | 一种基于互联结构的太阳能叠片电池 |
CN109037365A (zh) * | 2018-08-03 | 2018-12-18 | 浙江爱旭太阳能科技有限公司 | 贯孔单面叠瓦太阳能电池组件及制备方法 |
CN109119498A (zh) * | 2018-09-12 | 2019-01-01 | 江苏爱康能源研究院有限公司 | 外观统一且高可靠性的太阳能电池组件及其制备方法 |
CN109256235A (zh) * | 2018-09-20 | 2019-01-22 | 彭延岩 | 导电胶、太阳能背钝化电池、叠瓦电池串及其制作方法 |
CN208444844U (zh) * | 2018-04-09 | 2019-01-29 | 成都晔凡科技有限公司 | 用于叠瓦组件的太阳能电池片和太阳能电池 |
CN210156385U (zh) * | 2019-07-11 | 2020-03-17 | 江苏爱康科技股份有限公司 | 硅基异质结太阳电池叠瓦光伏组件 |
-
2019
- 2019-07-11 CN CN201910622894.0A patent/CN110379867A/zh active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN207542262U (zh) * | 2017-10-16 | 2018-06-26 | 泰州隆基乐叶光伏科技有限公司 | 一种基于互联结构的太阳能叠片电池 |
CN208444844U (zh) * | 2018-04-09 | 2019-01-29 | 成都晔凡科技有限公司 | 用于叠瓦组件的太阳能电池片和太阳能电池 |
CN109037365A (zh) * | 2018-08-03 | 2018-12-18 | 浙江爱旭太阳能科技有限公司 | 贯孔单面叠瓦太阳能电池组件及制备方法 |
CN109119498A (zh) * | 2018-09-12 | 2019-01-01 | 江苏爱康能源研究院有限公司 | 外观统一且高可靠性的太阳能电池组件及其制备方法 |
CN109256235A (zh) * | 2018-09-20 | 2019-01-22 | 彭延岩 | 导电胶、太阳能背钝化电池、叠瓦电池串及其制作方法 |
CN210156385U (zh) * | 2019-07-11 | 2020-03-17 | 江苏爱康科技股份有限公司 | 硅基异质结太阳电池叠瓦光伏组件 |
Cited By (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110828598A (zh) * | 2019-10-30 | 2020-02-21 | 江苏朗道新能源有限公司 | 一种半片叠瓦组件及其制作方法 |
CN110838527A (zh) * | 2019-10-30 | 2020-02-25 | 江苏朗道新能源有限公司 | 一种用于半片叠瓦光伏组件的电池片及该组件的制作方法 |
CN110838527B (zh) * | 2019-10-30 | 2024-03-08 | 江苏朗道新能源有限公司 | 一种用于半片叠瓦光伏组件的电池片及该组件的制作方法 |
CN110828598B (zh) * | 2019-10-30 | 2024-03-08 | 江苏朗道新能源有限公司 | 一种半片叠瓦组件及其制作方法 |
WO2021217786A1 (zh) * | 2020-04-30 | 2021-11-04 | 浙江晶科能源有限公司 | 一种叠瓦组件网版结构 |
CN112885914A (zh) * | 2021-01-07 | 2021-06-01 | 昆山协鑫光电材料有限公司 | 钙钛矿hjt叠层叠瓦太阳能电池组件及其制备方法 |
CN113921654B (zh) * | 2021-09-26 | 2023-11-03 | 中国华能集团清洁能源技术研究院有限公司 | 叠瓦光伏组件的制作方法 |
CN113921653B (zh) * | 2021-09-26 | 2023-11-07 | 中国华能集团清洁能源技术研究院有限公司 | 叠瓦光伏组件的制作方法 |
CN113921654A (zh) * | 2021-09-26 | 2022-01-11 | 中国华能集团清洁能源技术研究院有限公司 | 叠瓦光伏组件的制作方法 |
CN113921653A (zh) * | 2021-09-26 | 2022-01-11 | 中国华能集团清洁能源技术研究院有限公司 | 叠瓦光伏组件的制作方法 |
CN114373810A (zh) * | 2021-12-24 | 2022-04-19 | 新余赛维电源科技有限公司 | 光伏组件及制备方法 |
CN115799366A (zh) * | 2022-11-18 | 2023-03-14 | 江苏悦阳光伏科技有限公司 | 一种高功率太阳能组件 |
CN115799366B (zh) * | 2022-11-18 | 2023-10-20 | 江苏悦阳光伏科技有限公司 | 一种太阳能组件 |
CN117276378A (zh) * | 2023-09-19 | 2023-12-22 | 隆基绿能科技股份有限公司 | 一种太阳能电池阵列 |
CN117276378B (zh) * | 2023-09-19 | 2024-04-30 | 隆基绿能科技股份有限公司 | 一种太阳能电池阵列及其拼接方法 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN110379867A (zh) | 硅基异质结太阳电池叠瓦光伏组件及其制备方法 | |
CN205376541U (zh) | 光伏结构和太阳能模块 | |
CN204538036U (zh) | 太阳能电池板、太阳能电池、太阳能电池板装置和太阳能电池装置 | |
CN106898665B (zh) | 一种串联式柔性薄膜太阳能电池组件及其制作方法 | |
CN210156385U (zh) | 硅基异质结太阳电池叠瓦光伏组件 | |
EP3557634A1 (en) | Solar laminated cell inter-slice connection structure and solar laminated cell | |
CN104037265A (zh) | 一种hit太阳电池及其电极制备及串联的方法 | |
JP2007294866A (ja) | 太陽電池モジュール | |
CN107910396A (zh) | 一种双面单晶叠片光伏组件及其制造方法 | |
CN108538948A (zh) | 太阳能电池栅线结构、太阳能电池片及太阳能叠片组件 | |
WO2023024585A1 (zh) | 一种太阳能电池片、太阳能电池分片及光伏组件 | |
CN108598199A (zh) | 一种背接触式分片太阳电池组件及制备方法 | |
CN109119498A (zh) | 外观统一且高可靠性的太阳能电池组件及其制备方法 | |
CN205657073U (zh) | 一种具有透明电极晶体硅光伏电池的连接结构 | |
CN110071186B (zh) | 一种薄膜光伏组件内联结构及生产工艺 | |
US20240204123A1 (en) | Heterojunction cell and processing method therefor, and battery assembly | |
CN106449796B (zh) | 一种用于太阳电池的电极 | |
CN106876486A (zh) | P型晶体硅背接触双面电池的组串连接结构、组件及方法 | |
US8329495B2 (en) | Method of forming photovoltaic modules | |
CN210272399U (zh) | 条形太阳电池片、太阳电池和光伏组件 | |
CN209104165U (zh) | 太阳能电池片及太阳能电池组件 | |
CN112447864A (zh) | 条形太阳电池片、太阳电池和光伏组件及其制造方法 | |
WO2012128284A1 (ja) | 裏面電極型太陽電池、裏面電極型太陽電池の製造方法及び太陽電池モジュール | |
CN111725335A (zh) | Hbc高效太阳能电池背电极连接及封装一体化结构 | |
CN205657065U (zh) | 一种具有透明电极晶体硅光伏电池的组串连接结构 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
CB02 | Change of applicant information |
Address after: 214421 no.1015, Qinfeng Road, Hongmiao Park, Huashi Industrial Park, Jiangyin City, Wuxi City, Jiangsu Province Applicant after: Zhejiang Aikang New Energy Technology Co.,Ltd. Applicant after: JIANGSU AKCOME ENERGY RESEARCH INSTITUTE Co.,Ltd. Applicant after: Zhejiang Aikang Photoelectric Technology Co.,Ltd. Address before: 214421 no.1015, Qinfeng Road, Hongmiao Park, Huashi Industrial Park, Jiangyin City, Wuxi City, Jiangsu Province Applicant before: JIANGYIN AKCOME SCIENCE AND TECHNOLOGY Co.,Ltd. Applicant before: JIANGSU AKCOME ENERGY RESEARCH INSTITUTE Co.,Ltd. Applicant before: Zhejiang Aikang Photoelectric Technology Co.,Ltd. |
|
CB02 | Change of applicant information | ||
CB02 | Change of applicant information |
Country or region after: China Address after: Room 901-20, Building 1, 1818-2 Wenyi West Road, Yuhang Street, Yuhang District, Hangzhou City, Zhejiang Province, 311100 Applicant after: Zhejiang Aikang New Energy Technology Co.,Ltd. Applicant after: JIANGSU AKCOME ENERGY RESEARCH INSTITUTE Co.,Ltd. Applicant after: Zhejiang Aikang Photoelectric Technology Co.,Ltd. Address before: 214421 no.1015, Qinfeng Road, Hongmiao Park, Huashi Industrial Park, Jiangyin City, Wuxi City, Jiangsu Province Applicant before: Zhejiang Aikang New Energy Technology Co.,Ltd. Country or region before: China Applicant before: JIANGSU AKCOME ENERGY RESEARCH INSTITUTE Co.,Ltd. Applicant before: Zhejiang Aikang Photoelectric Technology Co.,Ltd. |
|
CB02 | Change of applicant information |