CN110379803A - 包括电子芯片的电子设备 - Google Patents

包括电子芯片的电子设备 Download PDF

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CN110379803A
CN110379803A CN201910293064.8A CN201910293064A CN110379803A CN 110379803 A CN110379803 A CN 110379803A CN 201910293064 A CN201910293064 A CN 201910293064A CN 110379803 A CN110379803 A CN 110379803A
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lid
opening
chip
optical
chamber
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R·科菲
L·埃拉尔
D·加尼
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Yifa Semiconductor Co Ltd
Italian Semiconductor (grenoble 2) Co
STMicroelectronics Grenoble 2 SAS
STMicroelectronics Asia Pacific Pte Ltd
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Yifa Semiconductor Co Ltd
Italian Semiconductor (grenoble 2) Co
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
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    • G01S7/4811—Constructional features, e.g. arrangements of optical elements common to transmitter and receiver
    • G01S7/4813—Housing arrangements
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    • H01—ELECTRIC ELEMENTS
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
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Abstract

本公开的实施例涉及包括电子芯片的电子设备。一种载体晶片具有背面和正面以及在背面和正面之间的电连接的网络。第一电子芯片被安装，其中其底面位于载体晶片的正面之上。第一电子芯片具有在底面和面之间延伸的贯穿开口。第二电子芯片被安装在贯穿开口中，并且被安装到载体晶片的正面。

Description

包括电子芯片的电子设备
优先权权益
本申请要求于2018年4月13日提交的法国专利申请号1853230的优先权，其内容在法律允许的最大程度通过整体引用并入于此。
技术领域
本发明涉及微电子领域，更具体地涉及包括电子芯片的电子设备领域。
发明内容
在一个实施例中，一种电子设备包括：载体晶片，该载体晶片具有背面和正面，并且设置有从一个面到另一个面的电连接的网络；第一电子芯片，其被安装在载体晶片的正面之上，并且具有从一个面到另一个面的贯穿开口；以及第二电子芯片，其至少部分地位于所述开口中并且被安装在载体晶片的正面之上。
因此，可以减小芯片在衬底上的占用面积。
至少一个电连接线可以被设置为连接第一芯片的正面的至少一个焊盘和第二芯片的正面的至少一个焊盘。
第一芯片可以在其正面包括光传感器，并且第二芯片可以在其正面包括光发射器。
根据一个变型实施例，盖体可以被安装在载体晶片之上，并且可以限定光传感器和光发射器所位于的腔室，盖体可能包括具有贯穿开口的前壁，该贯穿开口设置有允许光穿过的光学元件，该光学元件位于光发射器的上方并且面向光发射器。
根据另一变型实施例，盖体可以被安装在载体晶片之上，并且可以限定由内部隔板分隔开的两个腔室，光传感器和光发射器分别位于该两个腔室中，盖体包括具有贯穿开口的前壁，该贯穿开口设置有允许光穿过的光学元件，该光学元件分别位于光发射器和光传感器的上方并且分别面向光发射器和光传感器。
第一芯片可以在其正面包括第一和第二光传感器，并且第二芯片可以在其正面包括光发射器。
根据另一变型实施例，盖体可以被安装在载体晶片之上，并且可以限定第一和第二腔室，第一和第二腔室由内部隔板分隔开，第一芯片穿过该内部隔板，光发射器和第一光传感器位于第一腔室中，并且第二光传感器位于第二腔室中，盖体包括具有贯穿开口和开口的前壁，该贯穿开口设置有允许光穿过的光学元件，该光学元件位于光发射器上方，并且开口设置有允许光穿过的光学元件，该光学元件位于第二光传感器的上方。
附图说明
现在将通过由附图图示的非限制性示例性实施例的方式来描述电子设备，其中：
图1示出了电子设备的纵向截面；
图2示出了沿着图1中标记的II-II的电子设备的俯视图，盖体处于截面中；和
图3示出了沿着图1中标记的III-III的电子设备的横截面。
具体实施方式
在图1至图3中图示的电子设备1包括由电介质材料制成的主载体晶片2(例如具有矩形轮廓)，主载体晶片2具有背面3和正面4，并且主载体晶片2设置有在正面的前焊盘和背面的背焊盘之间的电连接的集成网络5。
电子设备1包括第一电子集成电路芯片6(例如具有矩形轮廓)，其具有背面7和正面8，并且第一电子集成电路芯片6经由在主载体晶片2的正面4和第一芯片6的背面7之间被插入的粘合剂层被安装在主载体晶片2的正面4之上。
第一芯片6通过电连接线9连接到电连接的网络5，电连接线9将第一芯片6的前焊盘链接到主载体晶片2的前焊盘。
在没有电子部件的区域中，第一芯片6具有开口10，开口10从一个面穿过到另一个面。开口10可以通过激光钻削制成。
电子设备1包括第二电子集成电路芯片11，其至少部分地位于开口10中，并且第二电子集成电路芯片11被安装在载体晶片2的正面4之上。
因此，芯片6和11在衬底晶片2上的占用面积被减小到仅占第一芯片6的占用面积。
第二芯片11可以通过第二芯片11的背面12的至少一个背焊盘与主载体晶片2的至少一个前焊盘之间的至少一个直接连接而被连接到主载体晶片2的电连接的网络5，和/或第二芯片11可以通过至少一个电连接线13而被连接到第一芯片6，该至少一个电连接线13链接第二芯片11的正面14的至少一个前焊盘和第一芯片6的正面8的至少一个前焊盘。经由电线13传输的电信号可以经由主芯片6传输到主载体晶片2的电连接的网络5。
根据一个示例性实施例，电子设备1包括以下布置。
考虑纵向方向和横向方向。
第一芯片6的正面8被设置有两个光传感器15和16，它们被纵向间隔开。
第二芯片11的正面14设置有光发射器17。
第一芯片的开口10位于第一芯片的光传感器15附近并且与第一芯片的光传感器15隔开一定距离。
有利地，光传感器15和16以及光发射器17纵向对齐。
电子设备1包括盖体18，盖体18包括前壁或正面壁19和周壁20，周壁20从前壁19向后突出并且具有背端面21，背端面21位于主载体晶片2的正面4的周边区域之上。
盖体18经由粘合剂珠22附接到主载体晶片2上，粘合剂珠22被插入在主载体晶片2的前面8和周壁37的背端面38之间。
盖体18包括横向内部隔板23，其从前壁19向后突出并且重新连接周壁20的纵向侧。
内部隔板23具有背凹口24，第一芯片6穿过背凹口24，并且背凹口24在主载体晶片2上方限定两个腔室25和26，使得第一芯片6和第二芯片11的光传感器15位于腔室25中，并且第一芯片6的光传感器16位于腔室26中。
在凹口24中，粘合剂珠27被插入在内部隔板23和第一芯片6之间，并且在第一芯片6的两侧，粘合剂珠27被插入在内部隔板23和主载体晶片2之间。
盖体18的前壁19具有贯穿开口28和29，贯穿开口28和29被定位为面向腔室25和26，并且贯穿开口28和29设置有光可以穿过的光学元件30和31，例如，光学元件呈板状。光学元件30和31可以抵靠开口28和29的内肩部并且被接合到盖体18的前壁19。
光学元件30位于光发射器17上方。光学元件31位于光传感器16上方。
电子设备1可以以下列方式操作。
第二芯片11的光发射器15通过光学元件30向外发射光辐射，例如红外辐射。
在腔室25中存在的发出的光辐射由第一芯片6的光传感器15检测。
第一芯片6的光传感器16通过光学元件31检测外部光辐射。
电子设备1可以构成用于通过处理从光传感器30和31或相机产生的信号来检测身体的接近度的检测器。
借助于各种所述布置，电子设备1特别紧凑。

Claims (7)

1.一种电子设备，包括：
载体晶片，具有背面和正面，并且所述载体晶片设置有在所述正面和所述背面之间的电连接的网络；
第一电子芯片，具有被安装在所述载体晶片的所述正面之上的底面，并且具有从顶面到所述底面的贯穿开口；以及
第二电子芯片，至少部分地位于所述开口中，并且具有被安装在所述载体晶片的所述正面之上的第一面。
2.根据权利要求1所述的设备，其中所述第一电子芯片的所述顶面的至少一个焊盘和所述第二电子芯片的至少一个焊盘通过至少一个电连接线连接。
3.根据权利要求1所述的设备，其中所述第一电子芯片包括位于所述顶面中的光传感器，并且所述第二电子芯片包括位于与所述第一面相对的第二面中的光发射器。
4.根据权利要求3所述的设备，还包括盖体，所述盖体被安装在所述载体晶片之上，并且所述盖体限定腔室，所述光传感器和所述光发射器位于所述腔室中，所述盖体包括具有贯穿开口的前壁，所述贯穿开口设置有允许光通过的光学元件，所述光学元件位于所述光发射器上方、并且面向所述光发射器。
5.根据权利要求3所述的设备，还包括盖体，所述盖体被安装在所述载体晶片之上，并且所述盖体限定由内部隔板分隔开的两个腔室，其中所述光传感器位于所述两个腔室中的一个腔室内，并且所述光发射器位于所述两个腔室中的另一个腔室中，所述盖体包括具有贯穿开口的前壁，所述贯穿开口设置有允许光穿过的光学元件，其中所述光学元件分别位于所述光发射器和所述光传感器的上方、并且分别面向所述光发射器和所述光传感器。
6.根据权利要求1所述的设备，其中所述第一电子芯片包括位于所述顶面中的第一光传感器和第二光传感器，并且所述第二芯片包括位于与所述第一面相对的第二面中的光发射器。
7.根据权利要求6所述的设备，还包括盖体，所述盖体被安装在所述载体晶片之上，并且所述盖体限定第一腔室和第二腔室，所述第一腔室和所述第二腔室由内部隔板分隔开，所述第一芯片穿过所述内部隔板，所述光发射器和所述第一光传感器位于所述第一腔室中，并且所述第二光传感器位于所述第二腔室中，所述盖体包括具有第一贯穿开口和第二贯穿开口的前壁，所述第一贯穿开口设置有允许光穿过的、并且位于所述光发射器上方的光学元件，所述第二贯穿开口设置有允许光穿过的、并且位于第二光传感器上方的光学元件。
CN201910293064.8A 2018-04-13 2019-04-12 包括电子芯片的电子设备 Pending CN110379803A (zh)

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