CN110379800A - A kind of two-way low junction capacity TVS diode of ceramic paster encapsulation - Google Patents
A kind of two-way low junction capacity TVS diode of ceramic paster encapsulation Download PDFInfo
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- CN110379800A CN110379800A CN201910704596.6A CN201910704596A CN110379800A CN 110379800 A CN110379800 A CN 110379800A CN 201910704596 A CN201910704596 A CN 201910704596A CN 110379800 A CN110379800 A CN 110379800A
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- China
- Prior art keywords
- way
- junction capacity
- low junction
- tvs
- tube core
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- 239000000919 ceramic Substances 0.000 title claims abstract description 17
- 238000005538 encapsulation Methods 0.000 title claims description 7
- 239000011195 cermet Substances 0.000 claims description 4
- 230000015556 catabolic process Effects 0.000 claims description 3
- 230000002457 bidirectional effect Effects 0.000 abstract description 5
- 238000009434 installation Methods 0.000 abstract description 3
- 239000003990 capacitor Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
Abstract
The present invention provides a kind of ceramic pasters to encapsulate two-way low junction capacity TVS diode, including two-way TVS pipe core；One connection of the two-way TVS pipe core is terminated with two-way parallel branch, and two-way branch, which accesses, low junction capacity tube core, and the low junction capacity tube core of two-way branch road is contrary.The present invention is integrated two groups of bidirectional low-capacitance TVS pipes by way of series, parallel and copolar, needs the space with 2 products in the past, is only needed 1 space now, is designed for route and saved very big installation space, realize integrated, the miniaturization of product.
Description
Technical field
The present invention relates to a kind of ceramic pasters to encapsulate two-way low junction capacity TVS diode.
Background technique
Since the dosage of TVS pipe in circuit is larger, it is few then several, more reaches dozens or even hundreds of, so many use
Amount certainly will occupy a large amount of space of circuit version, be unfavorable for integrated, the miniaturization of product.
Summary of the invention
In order to solve the above technical problems, the present invention provides a kind of ceramic pasters to encapsulate two-way low junction capacity TVS diode,
The ceramic paster encapsulates two-way low junction capacity TVS diode by way of series, parallel and copolar for two groups of bidirectional low-capacitances
TVS pipe integrates, and designs for route and has saved very big installation space, realizes integrated, the miniaturization of product
The present invention is achieved by the following technical programs.
A kind of ceramic paster provided by the invention encapsulates two-way low junction capacity TVS diode, including two-way TVS pipe core；Institute
The connection for stating two-way TVS pipe core is terminated with two-way parallel branch, and two-way branch, which accesses, low junction capacity tube core, and two-way branch
The low junction capacity tube core of road is contrary.
The two-way branch road, the quantity of low junction capacity tube core are identical.
Low junction capacity tube core direction in the two-way branch on any road is in the same direction.
The two-way TVS pipe core and low junction capacity tube core are the encapsulation of cermet patch.
The two-way branch road, the electrical parameter of low junction capacity tube core are identical.
There is circuit connection between the interface end of the two-way branch and low junction capacity tube core.
The capacitance of the two-way TVS pipe core is 50pF.
Minimum breakdown voltage VBR >=1200V of the two-way TVS pipe core.
The beneficial effects of the present invention are: by two groups of bidirectional low-capacitance TVS pipe collection by way of series, parallel and copolar
At together, the space with 2 products was needed in the past, only needs 1 space now, is designed for route and has been saved very big installation sky
Between, realize integrated, the miniaturization of product.
Detailed description of the invention
Fig. 1 is connection schematic diagram of the invention；
Fig. 2 is encapsulation schematic diagram of the invention.
Specific embodiment
Be described further below technical solution of the present invention, but claimed range be not limited to it is described.
A kind of ceramic paster as shown in Figure 1 and Figure 2 encapsulates two-way low junction capacity TVS diode, including two-way TVS pipe core；
One connection of the two-way TVS pipe core is terminated with two-way parallel branch, and two-way branch, which accesses, low junction capacity tube core, and two-way
The low junction capacity tube core of branch road is contrary.
The two-way branch road, the quantity of low junction capacity tube core are identical.
Low junction capacity tube core direction in the two-way branch on any road is in the same direction.
The two-way TVS pipe core and low junction capacity tube core are the encapsulation of cermet patch.
The two-way branch road, the electrical parameter of low junction capacity tube core are identical.
There is circuit connection between the interface end of the two-way branch and low junction capacity tube core.
The capacitance of the two-way TVS pipe core is 50pF.
Minimum breakdown voltage VBR >=1200V of the two-way TVS pipe core.
The present invention relates to the pulse power 3000W of product and following (impulse waveform be 10/1000 μ s), junction capacity most down to
The two-way TVS diode of 50pF, antistatic grade reach 30KV, and up to 200A, (impulse waveform is 10/1000 μ to the pulse current that can be born
S), using ceramic paster packing forms, it can be achieved that the function of bidirectional protective circuit.
The present invention by a two-way TVS pipe core respectively the low junction capacity tube core contrary with two groups connect (VBR >=
1200V), electrical schematic diagram is as shown in Figure 1.The calculation of capacitor isCapacitor is directly proportional to chip area, with
Electrode plate spacing is inversely proportional and (refers in particular to chip PN junction depletion width at this), and in order to reduce device capacitor, chip selection principle is:
Under the premise of guaranteeing pulse power, depletion width is big as far as possible (i.e. VBR is big), and the area of chip is small as far as possible, according to a large amount of
Practical experience summarizes the corresponding relationship of pulse power and chip size, as shown in table 1:
The mapping table of table 1 pulse power and chip size
The present invention uses cermet patch outline packages, and assembled inside is as shown in Fig. 2, two groups of rectifying tubes press phase in product
Then opposite direction assembled in parallel is separately connected TVS pipe, form bidirectional protective circuit.According to capacitor series connection calculation formulaIn order to reduce product capacitor, in electrical parameter prescribed limit, the case where encapsulation allows, it can suitably increase rectification
Tube chip quantity.
Present invention is mainly used for precision components in protection circuit, and since the capacitance of product is lower, signal is decayed
To good control, to be effectively protected the authenticity of transmission signal.As digital I/O mouthfuls of electrostatic protection, 100M Ethernet are anti-
Thunder protection, communication interface lightning protection etc..
Claims (8)
1. a kind of ceramic paster encapsulates two-way low junction capacity TVS diode, including two-way TVS pipe core, it is characterised in that: described double
A connection to TVS pipe core is terminated with two-way parallel branch, and two-way branch, which accesses, low junction capacity tube core, and two-way branch road
Low junction capacity tube core it is contrary.
2. ceramic paster as described in claim 1 encapsulates two-way low junction capacity TVS diode, it is characterised in that: the two-way
Branch road, the quantity of low junction capacity tube core are identical.
3. ceramic paster as described in claim 1 encapsulates two-way low junction capacity TVS diode, it is characterised in that: described two
The low junction capacity tube core direction of any road is in the same direction in the branch of road.
4. ceramic paster as described in claim 1 encapsulates two-way low junction capacity TVS diode, it is characterised in that: described two-way
TVS pipe core and low junction capacity tube core are the encapsulation of cermet patch.
5. ceramic paster as described in claim 1 encapsulates two-way low junction capacity TVS diode, it is characterised in that: the two-way
Branch road, the electrical parameter of low junction capacity tube core are identical.
6. ceramic paster as described in claim 1 encapsulates two-way low junction capacity TVS diode, it is characterised in that: the two-way
There is circuit connection between the interface end of branch and low junction capacity tube core.
7. ceramic paster as described in claim 1 encapsulates two-way low junction capacity TVS diode, it is characterised in that: described two-way
The capacitance of TVS pipe core is 50pF.
8. ceramic paster as described in claim 1 encapsulates two-way low junction capacity TVS diode, it is characterised in that: described two-way
Minimum breakdown voltage VBR >=1200V of TVS pipe core.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910704596.6A CN110379800A (en) | 2019-07-31 | 2019-07-31 | A kind of two-way low junction capacity TVS diode of ceramic paster encapsulation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910704596.6A CN110379800A (en) | 2019-07-31 | 2019-07-31 | A kind of two-way low junction capacity TVS diode of ceramic paster encapsulation |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110379800A true CN110379800A (en) | 2019-10-25 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910704596.6A Pending CN110379800A (en) | 2019-07-31 | 2019-07-31 | A kind of two-way low junction capacity TVS diode of ceramic paster encapsulation |
Country Status (1)
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| CN (1) | CN110379800A (en) |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050189619A1 (en) * | 2004-02-27 | 2005-09-01 | Walters Cecil K. | PIN or NIP low capacitance transient voltage suppressors and steering diodes |
| CN201898328U (en) * | 2010-11-30 | 2011-07-13 | 百圳君耀电子（深圳）有限公司 | Semiconductor surge protection device |
| CN102709333A (en) * | 2012-06-16 | 2012-10-03 | 中国振华集团永光电子有限公司 | Low-capacity glass solid packaged silicon transient voltage suppressor and manufacturing method thereof |
| CN203119463U (en) * | 2012-12-28 | 2013-08-07 | 李怀东 | Low-capacitance large-surge protection circuit |
| CN105186478A (en) * | 2015-08-20 | 2015-12-23 | 北京燕东微电子有限公司 | Transient voltage suppressor |
| US20160240510A1 (en) * | 2015-02-17 | 2016-08-18 | Sfi Electronics Technology Inc. | Multi-function miniaturized surface-mount device and process for producing the same |
| CN208111441U (en) * | 2017-12-29 | 2018-11-16 | 杭州士兰集成电路有限公司 | Bidirectional low-capacitance TVS device |
| CN210142650U (en) * | 2019-07-31 | 2020-03-13 | 中国振华集团永光电子有限公司（国营第八七三厂） | Two-way low junction capacitance TVS diode of ceramic paster encapsulation |
-
2019
- 2019-07-31 CN CN201910704596.6A patent/CN110379800A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050189619A1 (en) * | 2004-02-27 | 2005-09-01 | Walters Cecil K. | PIN or NIP low capacitance transient voltage suppressors and steering diodes |
| CN201898328U (en) * | 2010-11-30 | 2011-07-13 | 百圳君耀电子（深圳）有限公司 | Semiconductor surge protection device |
| CN102709333A (en) * | 2012-06-16 | 2012-10-03 | 中国振华集团永光电子有限公司 | Low-capacity glass solid packaged silicon transient voltage suppressor and manufacturing method thereof |
| CN203119463U (en) * | 2012-12-28 | 2013-08-07 | 李怀东 | Low-capacitance large-surge protection circuit |
| US20160240510A1 (en) * | 2015-02-17 | 2016-08-18 | Sfi Electronics Technology Inc. | Multi-function miniaturized surface-mount device and process for producing the same |
| CN105186478A (en) * | 2015-08-20 | 2015-12-23 | 北京燕东微电子有限公司 | Transient voltage suppressor |
| CN208111441U (en) * | 2017-12-29 | 2018-11-16 | 杭州士兰集成电路有限公司 | Bidirectional low-capacitance TVS device |
| CN210142650U (en) * | 2019-07-31 | 2020-03-13 | 中国振华集团永光电子有限公司（国营第八七三厂） | Two-way low junction capacitance TVS diode of ceramic paster encapsulation |
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