CN110364596B - Complementary color LED device and preparation method thereof - Google Patents
Complementary color LED device and preparation method thereof Download PDFInfo
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- CN110364596B CN110364596B CN201910694497.4A CN201910694497A CN110364596B CN 110364596 B CN110364596 B CN 110364596B CN 201910694497 A CN201910694497 A CN 201910694497A CN 110364596 B CN110364596 B CN 110364596B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
Abstract
The application relates to a complementary color LED device and a preparation method of the complementary color LED device, relating to the technical field of LEDs. Wherein the light conversion layer comprises nanocrystals and a color complementing agent mixed with each other. The color complementing agent and the nanocrystalline phase are mixed and coated on the LED chip to form a light conversion layer, so that the color temperature of the color complementing LED device can be adjusted, a series of white LED devices with different color temperatures can be formed, the display effect is ensured, and the application range of the white LED device is enlarged.
Description
Technical Field
The application relates to the technical field of LEDs, in particular to a complementary color LED device and a preparation method of the complementary color LED device.
Background
The inorganic LED chip has high luminous efficiency, and the white light device prepared by adopting the nanocrystalline as the LED light conversion material in the prior art is mostly limited by the luminous peak of the nanocrystalline, so the color temperature of the prepared white light device is limited, the display effect is influenced, and the application range of the white light device is limited.
Disclosure of Invention
The application aims at providing a complementary color LED device which is adjustable in color temperature, good in display effect and capable of improving the application range of a white light device.
Another objective of the present application is to provide a method for manufacturing a complementary color LED device, which enables the complementary color LED device to have adjustable color temperature, good display effect, and wide application range.
In order to achieve the above object, the present invention is achieved by the following technical solutions.
In a first aspect, an embodiment of the present invention provides a complementary color LED device, including:
an LED chip;
a light conversion layer disposed on the LED chip;
wherein the light conversion layer comprises nanocrystals and a complementary color agent mixed with each other.
In an optional embodiment, the nanocrystal is a zinc oxide nanocrystal, and the color complementing agent is red phosphor or red quantum dots.
In an alternative embodiment, the zinc oxide nanocrystals have a luminescence peak between 380nm and 780 nm.
In an alternative embodiment, the light conversion layer further comprises a polymer, the nanocrystals, and the color replenisher are mixed with each other, and the nanocrystals and the color replenisher are both encapsulated in the polymer.
In an alternative embodiment, the polymer, the nanocrystals, and the color replenisher are mixed and bonded together by a transparent gel.
In an alternative embodiment, the LED chip has an emission peak less than or equal to 360 nm.
In an alternative embodiment, the thickness of the light conversion layer is between 0.01mm and 2 mm.
In a second aspect, an embodiment of the present invention provides a method for manufacturing a complementary color LED device, including:
coating a light conversion layer on the LED chip;
wherein the light conversion layer comprises nanocrystals and a complementary color agent mixed with each other.
In an alternative embodiment, before the step of coating the light conversion layer on the LED chip, the method further includes:
and mixing the nanocrystalline and the color supplementing agent according to a preset proportion.
In an alternative embodiment, after the step of mixing the nanocrystals and the color-replenishing agent according to the preset ratio, the method further includes:
and mixing the mixed nano-crystal and the color complementing agent with a polymer so as to wrap the nano-crystal and the color complementing agent in the polymer.
According to the complementary color LED device, the complementary color agent and the nanocrystalline phase are mixed and coated on the LED chip to form the light conversion layer, so that the color temperature of the complementary color LED device can be adjusted, the display effect is ensured, and the application range of a white light device is enlarged.
Additional features and advantages of the present application will be described in detail in the detailed description which follows.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are required to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained from the drawings without inventive effort.
Fig. 1 is a schematic structural diagram of an complementary color LED device provided in a first embodiment of the present application;
fig. 2 is a schematic structural diagram of an complementary color LED device provided in a third embodiment of the present application;
fig. 3 is a block diagram illustrating a method for manufacturing a complementary color LED device according to a fourth embodiment of the present disclosure;
fig. 4 is a block diagram illustrating a method for manufacturing a complementary color LED device according to a fifth embodiment of the present application.
Icon: 100-complementary color LED devices; 110-LED chips; 130-light converting layer; 150-ultraviolet light filter layer;
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. It is to be understood that the embodiments described are only a few embodiments of the present application and not all embodiments. The components of the embodiments of the present application, generally described and illustrated in the figures herein, can be arranged and designed in a wide variety of different configurations.
In the description of the present application, it should be noted that the terms "inside", "outside", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings or orientations or positional relationships that the products of the application usually place when using, and are only used for convenience in describing the present application and simplifying the description, but do not indicate or imply that the devices or elements that are referred to must have a specific orientation, be constructed in a specific orientation, and operate, and thus, should not be construed as limiting the present application. Furthermore, the terms "first," "second," and the like are used merely to distinguish one description from another, and are not to be construed as indicating or implying relative importance.
In the description of the present application, it is also to be noted that, unless otherwise explicitly specified or limited, the terms "disposed" and "connected" are to be interpreted broadly, e.g., as being either fixedly connected, detachably connected, or integrally connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present application can be understood in a specific case by those of ordinary skill in the art.
First embodiment
Referring to fig. 1, the embodiment provides a complementary color LED device 100 with adjustable color temperature and good display effect, and improves the application range of the white light device.
The complementary color LED device 100 provided in the present embodiment includes an LED chip 110 and a light conversion layer 130 disposed on the LED chip 110. The light conversion layer 130 includes nanocrystals and a complementary color agent mixed with each other. Here, the light conversion layer 130 is formed by coating the uniformly mixed nanocrystals and the color-compensating agent on the LED chip 110 and curing the mixture.
In this embodiment, the LED chip 110 is a blue LED chip 110, which has high light emitting efficiency, and the light conversion layer 130 is coated on the light emitting side of the LED chip 110, and forms white light after being converted by the light conversion layer 130, so that the whole device is used in the field of back panel display or illumination. While the LED chip 110 is disposed on a substrate, specifically, a substrate having a heat sink, the LED chip 110 is coupled to the heat sink via an electrically and thermally conductive bonding material, such as solder, adhesive, coating, film, encapsulant, paste, grease, and/or other suitable material, through which heat is dissipated.
It should be noted that the nanocrystal in this embodiment refers to a semiconductor material using a nano crystal (nano crystal), and preferably, in this embodiment, a zinc oxide nanocrystal (ZnO) is used as a light conversion material, and is mixed with a color complementing agent and then coated on the LED chip 110. Wherein the size of the zinc oxide nano-crystal (ZnO) is between 5nm and 15nm, preferably 7 nm.
In this embodiment, the nanocrystal is zinc oxide nanocrystal (ZnO), and the color complementing agent is red phosphor or red quantum dot, preferably red phosphor. Because the zinc oxide nanocrystals (ZnO) emit weaker in red light, the color temperature of the finally emitted white light can be adjusted by performing color compensation through red fluorescent powder or red quantum dots, and the display effect is improved.
Of course, the nanocrystal material may also be zinc sulfide (ZnS) nanocrystal, zinc selenide (ZnSe) nanocrystal, zinc telluride (ZnTe) nanocrystal, cadmium sulfide (CdS) nanocrystal, cadmium selenide (CdSe) nanocrystal, cadmium telluride (CdTe) nanocrystal, gallium nitride (GaN) nanocrystal, gallium phosphide (GaP) nanocrystal, gallium selenide (GaSe) nanocrystal, gallium antimonide (GaSb) nanocrystal, gallium arsenide (GaAs) nanocrystal, aluminum nitride (AlN) nanocrystal, aluminum phosphide (AlP) nanocrystal, aluminum arsenide (AlAs) nanocrystal, indium phosphide (InP) nanocrystal, or indium arsenide (InAs) nanocrystal, and the color compensator may also select color compensators of different colors according to the choice of nanocrystal material to achieve a color compensation effect, so long as the color temperature can be adjusted, and the color temperature adjustment is not particularly limited herein.
Specifically, the luminescence peak of the zinc oxide nanocrystal (ZnO) is between 380nm and 780nm, and preferably, the luminescence peak of the zinc oxide nanocrystal is 600 nm. Meanwhile, the light emission peak of the LED chip 110 is less than or equal to 320nm, and preferably, the light emission peak of the LED chip 110 is 300 nm. By mixing the zinc oxide nano-crystalline particles with red fluorescent powder and combining the LED chip 110 with the light-emitting peak below 360nm as the excitation wavelength, a white light device with adjustable color temperature can be formed, and the display effect is ensured.
In this embodiment, the zinc oxide nanocrystals (ZnO) were prepared by a low-temperature sol-gel method using a methanol solution of zinc acetate dihydrate and potassium hydroxide as a precursor. Adding a certain proportion of red fluorescent powder into the prepared zinc oxide nanocrystals (ZnO), adding transparent adhesive to mix the zinc oxide nanocrystals (ZnO) and the red fluorescent powder together, so that the red fluorescent powder is uniformly distributed in the zinc oxide nanocrystals (ZnO), then coating the mixture of the zinc oxide nanocrystals (ZnO) and the red fluorescent powder on the light-emitting side surface of the LED chip 110, and forming the light conversion layer 130 after curing. It should be noted that, when coating is performed by using a mixture of zinc oxide nanocrystals (ZnO) and red phosphor, it is necessary to ensure that the coating is uniform, and the thickness of the light conversion layer 130 at each position of the light-emitting surface of the cured LED chip 110 is consistent, and the thickness of the light conversion layer 130 is 0.01mm to 2mm, preferably 1 mm.
In this example, zinc oxide nanocrystals (ZnO) and red phosphor were mixed in a volume ratio of 2: 1, and adding transparent gel to uniformly distribute the zinc oxide nanocrystals (ZnO) and the red fluorescent powder in the transparent gel to ensure the display effect. Certainly, the addition amount of the red phosphor can be adjusted according to the actual color temperature requirement, when the expected color temperature is relatively cold, the red phosphor is properly added in a small amount, and when the expected color temperature is relatively warm, the red phosphor is properly added in a large amount, and the final display color temperature can be adjusted by adjusting the addition amount of the red phosphor. The volume ratio of the zinc oxide nanocrystals (ZnO) to the red phosphor is not specifically limited, as long as the color temperature requirement is satisfied.
In summary, in the complementary color LED device 100 provided in this embodiment, red phosphor is added into the zinc oxide nanocrystals (ZnO) of the light conversion layer 130 to perform color compensation, and the emission peak of the zinc oxide nanocrystals (ZnO) is between 380nm and 780nm, and the LED chip 110 with the emission peak below 360nm is combined to emit white light, so that the color temperature is adjustable, the display effect is good, and the application range of the white light device is improved.
Second embodiment
With reference to fig. 1, the basic structure and principle of the complementary color LED device 100 and the technical effects thereof are the same as those of the first embodiment, and for the sake of brief description, reference may be made to corresponding contents of the first embodiment for the sake of brevity.
The complementary color LED device 100 provided in the present embodiment includes an LED chip 110 and a light conversion layer 130 disposed on the LED chip 110. The light conversion layer 130 includes nanocrystals and a complementary color agent mixed with each other. Here, the light conversion layer 130 is formed by coating the uniformly mixed nanocrystals and the color-compensating agent on the LED chip 110 and curing the mixture.
In this embodiment, the light conversion layer 130 further includes a polymer, the nanocrystal, and the color complementing agent are mixed with each other, and the nanocrystal and the color complementing agent are both encapsulated in the polymer. It should be noted that, in this embodiment, the nanocrystal and the color complementing agent are mixed and then mixed with the polymer according to a certain ratio, where the ratio of the polymer should be greater than or equal to the ratio of the nanocrystal, and after the nanocrystal particles and the red phosphor are fully mixed, it can be ensured that both the nanocrystal particles and the red phosphor are coated in the polymer, and the red phosphor is uniformly distributed in the polymer.
It should be noted that the polymer, the nanocrystal, and the color complement are mixed and bonded together by the transparent gel.
In this embodiment, the nanocrystal is zinc oxide nanocrystal (ZnO), and the color complementing agent is red phosphor or red quantum dot, preferably red phosphor. Because the zinc oxide nanocrystals (ZnO) emit weaker in red light, the color temperature of the finally emitted white light can be adjusted by performing color compensation through red fluorescent powder or red quantum dots, and the display effect is improved. The polymer is any one or a combination of at least two of polystyrene, polyvinylidene fluoride, polyethylene, polyacrylic acid, and polymethyl methacrylate, and polystyrene is preferable. Specifically, the mixing process of the polymer and the zinc oxide nanocrystals (ZnO) is as follows: after zinc oxide nanocrystals (ZnO) are prepared by a low-temperature sol-gel method, red fluorescent powder is added into the zinc oxide nanocrystals (ZnO) and mixed to obtain mixed particles, then a polymer is added into the mixed particles, a polar solvent such as an alcohol solvent is added for swelling to obtain composite particles of the nanocrystals-polymer-red fluorescent powder, transparent gel is added, and finally the mixture is coated on the LED chip 110 and cured to form the light conversion layer 130.
In summary, in the complementary color LED device 100 provided in this embodiment, the polymer is added in the light conversion layer 130, and the zinc oxide nanocrystals (ZnO) are wrapped in the polymer, so that the function of isolating water and oxygen can be achieved, the zinc oxide nanocrystals (ZnO) are prevented from being affected by water and oxygen, the display effect is improved, and the environmental stability of the device is improved.
Third embodiment
Referring to fig. 2, the present embodiment provides an complementary color LED device 100, the basic structure and principle and the technical effect thereof are the same as those of the first embodiment, and for the sake of brief description, no part of the present embodiment is mentioned, and reference may be made to the corresponding contents in the first embodiment.
The complementary color LED device 100 provided in the present embodiment includes an LED chip 110, a light conversion layer 130 disposed on the LED chip 110, and an ultraviolet light filtering layer 150 disposed on the light conversion layer 130. The light conversion layer 130 includes nanocrystals and a complementary color agent mixed with each other. Here, the light conversion layer 130 is formed by coating the uniformly mixed nanocrystals and the color-compensating agent on the LED chip 110 and curing the mixture.
In the present embodiment, the ultraviolet filter layer 150 is adhered to a surface of the light conversion layer 130 on a side away from the LED chip 110 by a transparent adhesive. By arranging the ultraviolet filter layer 150, ultraviolet light in light emitted after being converted by the light conversion layer 130 can be filtered out, and ultraviolet light with a wavelength less than or equal to 360nm can be filtered out, so that the harm to a human body is avoided.
Fourth embodiment
Referring to fig. 3, the present embodiment provides a method for manufacturing an complementary color LED device 100, for manufacturing the complementary color LED device 100 provided in the first embodiment, the method for manufacturing the complementary color LED device 100 includes the following steps:
s1: and mixing the nanocrystalline and the color supplementing agent according to a preset proportion.
Specifically, in the embodiment, the zinc oxide nanocrystals (ZnO) are used as the nanocrystals, and the red phosphor is used as the color complementing agent, and since the zinc oxide nanocrystals (ZnO) emit light in the red light portion, the color is complemented by the red phosphor or the red quantum dots, so that the color temperature of the finally emitted white light can be adjusted, and the display effect is improved.
In this embodiment, the zinc oxide nanocrystals (ZnO) were prepared by a low-temperature sol-gel method using a methanol solution of zinc acetate dihydrate and potassium hydroxide as a precursor. Adding a certain proportion of red fluorescent powder into the prepared zinc oxide nano-crystal (ZnO), and adding transparent adhesive to mix the zinc oxide nano-crystal (ZnO) and the red fluorescent powder together, so that the red fluorescent powder is uniformly distributed in the zinc oxide nano-crystal (ZnO).
In this embodiment, the zinc oxide nanocrystals (ZnO) are mixed with the red phosphor at a certain ratio, and preferably, the volume ratio of the zinc oxide nanocrystals (ZnO) to the red phosphor is 2: 1, and adding transparent gel to uniformly distribute the zinc oxide nanocrystals (ZnO) and the red fluorescent powder in the transparent gel to ensure the display effect. Certainly, the addition amount of the red phosphor can be adjusted according to the actual color temperature requirement, when the expected color temperature is relatively cold, the red phosphor is properly added in a small amount, and when the expected color temperature is relatively warm, the red phosphor is properly added in a large amount, and the final display color temperature can be adjusted by adjusting the addition amount of the red phosphor. The volume ratio of the zinc oxide nanocrystals (ZnO) to the red phosphor is not specifically limited, as long as the color temperature requirement is satisfied.
S2: a light conversion layer 130 is coated on the LED chip 110.
Specifically, the light conversion layer 130 includes nanocrystals and a color complementing agent mixed with each other. In this embodiment, the light emitting side of the LED chip 110 is coated with a mixture of zinc oxide nanocrystals (ZnO) and red phosphor, and the red phosphor is uniformly distributed in the zinc oxide nanocrystals (ZnO). After zinc oxide nanocrystals (ZnO) and red phosphor are mixed, the mixture is coated on the LED chip 110, thereby forming the light conversion layer 130.
In this embodiment, the luminescence peak of the zinc oxide nanocrystal (ZnO) is between 380nm and 780 nm. Meanwhile, the light emission peak of the LED chip 110 is less than or equal to 320nm, and preferably, the light emission peak of the LED chip 110 is 300 nm. By mixing the zinc oxide nano-crystalline particles with red fluorescent powder and combining the LED chip 110 with the light-emitting peak below 360nm as the excitation wavelength, a white light device with adjustable color temperature can be formed, and the display effect is ensured.
Fifth embodiment
Referring to fig. 4, the present embodiment provides a method for manufacturing an complementary color LED device 100, for manufacturing the complementary color LED device 100 provided in the first embodiment, the method for manufacturing the complementary color LED device 100 includes the following steps:
s1: and mixing the nanocrystalline and the color supplementing agent according to a preset proportion.
Specifically, in the embodiment, the zinc oxide nanocrystals (ZnO) are used as the nanocrystals, and the red phosphor is used as the color complementing agent, and since the zinc oxide nanocrystals (ZnO) emit light in the red light portion, the color is complemented by the red phosphor or the red quantum dots, so that the color temperature of the finally emitted white light can be adjusted, and the display effect is improved.
S2: and mixing the mixed nanocrystal and the color complementing agent with the polymer so as to wrap the nanocrystal and the color complementing agent in the polymer.
Specifically, the mixture of the mixed zinc oxide nanocrystals (ZnO) and red phosphor is mixed with a polymer, so that the zinc oxide nanocrystals (ZnO) and red phosphor are wrapped in the polymer. It should be noted that the polymer, the nanocrystal, and the color complement are mixed and bonded together by the transparent gel. In this embodiment, the nanocrystal and the color complementing agent are mixed and then mixed with the polymer according to a certain ratio, wherein the ratio of the polymer is greater than or equal to that of the nanocrystal, and after the nanocrystal and the red phosphor are fully mixed, it can be ensured that both the nanocrystal particles and the red phosphor are coated in the polymer, and the red phosphor is uniformly distributed in the polymer.
In this embodiment, the polymer is any one or a combination of at least two of polystyrene, polyvinylidene fluoride, polyethylene, polyacrylic acid, and polymethyl methacrylate, and polystyrene is preferred. Specifically, the mixing process of the polymer and the zinc oxide nanocrystals (ZnO) is as follows: after zinc oxide nanocrystals (ZnO) are prepared by a low-temperature sol-gel method, red fluorescent powder is added into the zinc oxide nanocrystals (ZnO) and mixed to obtain mixed particles, then a polymer is added into the mixed particles, and a polar solvent such as an alcohol solvent is added for swelling to obtain the zinc oxide nanocrystals (ZnO) -polymer-red fluorescent powder composite particles.
S3: a light conversion layer 130 is coated on the LED chip 110.
Specifically, the light conversion layer 130 includes nanocrystals, a color-complementing agent, and a polymer mixed with each other. In this embodiment, the light emitting side of the LED chip 110 is coated with a mixture of zinc oxide nanocrystals (ZnO), red phosphor, and a polymer, and the red phosphor is uniformly distributed in the zinc oxide nanocrystals (ZnO). The zinc oxide nanocrystals (ZnO) and the red phosphor are mixed and then mixed with a polymer, and the final mixture is coated on the LED chip 110, thereby forming the light conversion layer 130.
It should be noted that the features of the embodiments in the present application may be combined with each other without conflict.
The above description is only a preferred embodiment of the present application and is not intended to limit the present application, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present application shall be included in the protection scope of the present application.
Claims (6)
1. A complementary color LED device, comprising:
an LED chip;
a light conversion layer coated on the LED chip;
the light conversion layer comprises nanocrystals, a color supplementing agent and a polymer which are mixed with each other, and the nanocrystals and the color supplementing agent are both wrapped in the polymer; the nano-crystal is a zinc oxide nano-crystal, and the color supplementing agent is red fluorescent powder or red quantum dots;
wherein the luminous peak of the zinc oxide nanocrystal is between 380nm and 780nm, and the luminous peak of the LED chip is less than or equal to 360 nm.
2. The complementary color LED device of claim 1, wherein the polymer, the nanocrystal, and the complementary color agent are mixed and bonded together by a transparent gel.
3. The complementary color LED device of claim 1, wherein the light conversion layer has a thickness of 0.01mm-2 mm.
4. A preparation method of a complementary color LED device is characterized by comprising the following steps:
coating a light conversion layer on the LED chip;
the light conversion layer comprises nanocrystals, a color supplementing agent and a polymer which are mixed with each other, and the nanocrystals and the color supplementing agent are both wrapped in the polymer;
the nano-crystal is a zinc oxide nano-crystal, and the color supplementing agent is red fluorescent powder or red quantum dots;
wherein the luminous peak of the zinc oxide nanocrystal is between 380nm and 780nm, and the luminous peak of the LED chip is less than or equal to 360 nm.
5. The method of claim 4, wherein the step of coating the light conversion layer on the LED chip is preceded by the step of:
and mixing the nanocrystalline and the color supplementing agent according to a preset proportion.
6. The method for preparing the color-complementing LED device as claimed in claim 5, wherein the step of mixing the nanocrystals and the color-complementing agent in a predetermined ratio is further followed by:
and mixing the mixed nano-crystal and the color complementing agent with a polymer so as to wrap the nano-crystal and the color complementing agent in the polymer.
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1385491A (en) * | 2001-05-16 | 2002-12-18 | 双叶电子工业株式会社 | White luminous fluorescent substance |
CN102533261A (en) * | 2011-11-29 | 2012-07-04 | 天津理工大学 | Preparing method and application of red light materials based on ZnO doped with Co |
CN102820388A (en) * | 2011-06-09 | 2012-12-12 | 庄育丰 | Manufacturing method of LED substrate, LED substrate and white light LED structure |
CN103560201A (en) * | 2013-11-20 | 2014-02-05 | 电子科技大学 | Ultraviolet light-emitting diode promoting growth of plants |
CN104364346A (en) * | 2012-05-07 | 2015-02-18 | 帕夫莱·拉多万诺维奇 | Light emitting material and method for production thereof |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2381495B1 (en) * | 2008-12-19 | 2017-04-26 | Samsung Electronics Co., Ltd. | Light emitting device package |
CN101969078B (en) * | 2010-08-06 | 2012-11-14 | 白金 | Selectively converging optical device |
CN102252273A (en) * | 2011-04-12 | 2011-11-23 | 广东佛照新光源科技有限公司 | Wavelength conversion device and manufacturing method thereof |
KR102522593B1 (en) * | 2017-01-19 | 2023-04-17 | 삼성디스플레이 주식회사 | Color conversion panel and display device including the same |
-
2019
- 2019-07-30 CN CN201910694497.4A patent/CN110364596B/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1385491A (en) * | 2001-05-16 | 2002-12-18 | 双叶电子工业株式会社 | White luminous fluorescent substance |
CN102820388A (en) * | 2011-06-09 | 2012-12-12 | 庄育丰 | Manufacturing method of LED substrate, LED substrate and white light LED structure |
CN102533261A (en) * | 2011-11-29 | 2012-07-04 | 天津理工大学 | Preparing method and application of red light materials based on ZnO doped with Co |
CN104364346A (en) * | 2012-05-07 | 2015-02-18 | 帕夫莱·拉多万诺维奇 | Light emitting material and method for production thereof |
CN103560201A (en) * | 2013-11-20 | 2014-02-05 | 电子科技大学 | Ultraviolet light-emitting diode promoting growth of plants |
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