CN110379909B - Cladding type LED device and preparation method of LED device - Google Patents
Cladding type LED device and preparation method of LED device Download PDFInfo
- Publication number
- CN110379909B CN110379909B CN201910693553.2A CN201910693553A CN110379909B CN 110379909 B CN110379909 B CN 110379909B CN 201910693553 A CN201910693553 A CN 201910693553A CN 110379909 B CN110379909 B CN 110379909B
- Authority
- CN
- China
- Prior art keywords
- polymer
- led chip
- nanocrystals
- light conversion
- conversion layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000002360 preparation method Methods 0.000 title abstract description 10
- 238000005253 cladding Methods 0.000 title abstract description 6
- 229920000642 polymer Polymers 0.000 claims abstract description 94
- 239000002159 nanocrystal Substances 0.000 claims abstract description 74
- 238000006243 chemical reaction Methods 0.000 claims abstract description 67
- 238000002156 mixing Methods 0.000 claims abstract description 17
- 239000011248 coating agent Substances 0.000 claims abstract description 16
- 238000000576 coating method Methods 0.000 claims abstract description 16
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 162
- 239000011787 zinc oxide Substances 0.000 claims description 81
- 239000000203 mixture Substances 0.000 claims description 22
- 230000004888 barrier function Effects 0.000 claims description 18
- 230000017525 heat dissipation Effects 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 238000003980 solgel method Methods 0.000 claims description 12
- 229920001940 conductive polymer Polymers 0.000 claims description 10
- 239000002904 solvent Substances 0.000 claims description 10
- 229920002125 Sokalan® Polymers 0.000 claims description 7
- 239000004584 polyacrylic acid Substances 0.000 claims description 7
- 239000004793 Polystyrene Substances 0.000 claims description 6
- 239000000853 adhesive Substances 0.000 claims description 6
- 230000001070 adhesive effect Effects 0.000 claims description 6
- 229920002223 polystyrene Polymers 0.000 claims description 6
- 239000002033 PVDF binder Substances 0.000 claims description 5
- 239000004698 Polyethylene Substances 0.000 claims description 5
- 239000011246 composite particle Substances 0.000 claims description 5
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 5
- -1 polyethylene Polymers 0.000 claims description 5
- 229920000573 polyethylene Polymers 0.000 claims description 5
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 5
- 229920002981 polyvinylidene fluoride Polymers 0.000 claims description 5
- 230000008569 process Effects 0.000 claims description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 4
- 239000002798 polar solvent Substances 0.000 claims description 4
- 230000008961 swelling Effects 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 15
- 239000001301 oxygen Substances 0.000 abstract description 15
- 229910052760 oxygen Inorganic materials 0.000 abstract description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 13
- 238000009413 insulation Methods 0.000 abstract description 12
- 230000007613 environmental effect Effects 0.000 abstract description 10
- 238000002955 isolation Methods 0.000 abstract description 7
- 239000000463 material Substances 0.000 abstract description 7
- 239000011229 interlayer Substances 0.000 abstract description 6
- 239000002105 nanoparticle Substances 0.000 abstract description 6
- 238000005286 illumination Methods 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 79
- 239000002245 particle Substances 0.000 description 10
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 9
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 9
- 238000013021 overheating Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000003756 stirring Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 238000004020 luminiscence type Methods 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- YZYKBQUWMPUVEN-UHFFFAOYSA-N zafuleptine Chemical compound OC(=O)CCCCCC(C(C)C)NCC1=CC=C(F)C=C1 YZYKBQUWMPUVEN-UHFFFAOYSA-N 0.000 description 3
- OZAIFHULBGXAKX-UHFFFAOYSA-N 2-(2-cyanopropan-2-yldiazenyl)-2-methylpropanenitrile Chemical compound N#CC(C)(C)N=NC(C)(C)C#N OZAIFHULBGXAKX-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- VOZRXNHHFUQHIL-UHFFFAOYSA-N glycidyl methacrylate Chemical compound CC(=C)C(=O)OCC1CO1 VOZRXNHHFUQHIL-UHFFFAOYSA-N 0.000 description 2
- 229910021389 graphene Inorganic materials 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229920002050 silicone resin Polymers 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- 229920002818 (Hydroxyethyl)methacrylate Polymers 0.000 description 1
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- KTALPKYXQZGAEG-UHFFFAOYSA-N 2-propan-2-ylthioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(C(C)C)=CC=C3SC2=C1 KTALPKYXQZGAEG-UHFFFAOYSA-N 0.000 description 1
- WOBHKFSMXKNTIM-UHFFFAOYSA-N Hydroxyethyl methacrylate Chemical compound CC(=C)C(=O)OCCO WOBHKFSMXKNTIM-UHFFFAOYSA-N 0.000 description 1
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 1
- HVVWZTWDBSEWIH-UHFFFAOYSA-N [2-(hydroxymethyl)-3-prop-2-enoyloxy-2-(prop-2-enoyloxymethyl)propyl] prop-2-enoate Chemical compound C=CC(=O)OCC(CO)(COC(=O)C=C)COC(=O)C=C HVVWZTWDBSEWIH-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000006072 paste Substances 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The application relates to a cladding type LED device and a preparation method of the LED device, and relates to the technical field of LEDs. By mixing the nanocrystals with the polymer, the nanocrystals are uniformly dispersed in the polymer and encapsulated by the polymer, isolating water and oxygen. And then coating the polymer-coated nanocrystals on the LED chip coated with the heat insulation interlayer to be used as an LED light conversion material, and combining the LED chip to form white light illumination or display backlight and the like. Compared with the prior art, the coating type LED device provided by the application can prevent moisture or oxygen from contacting with the nanocrystalline particles through polymer isolation water and oxygen, so that the influence of water and oxygen on the nanocrystalline particles is avoided, the luminous efficiency of the nanocrystalline is ensured, and the environmental stability of the white light device is further improved.
Description
Technical Field
The application relates to the technical field of LEDs, in particular to a coated LED device and a preparation method of the LED device.
Background
The white light device prepared by adopting the nanocrystalline (hereinafter referred to as nanocrystalline) with the fluorescence luminescence peak between 380 and 780nm as the light conversion material on the LED has the characteristics of low processing temperature, simple structure and low cost, but the nanocrystalline surface has different defects, and the luminescence efficiency can be influenced when the nanocrystalline surface encounters water oxygen, so that the environmental stability of the white light device is influenced.
Disclosure of Invention
The purpose of this application is to provide a cladding formula LED device, and this cladding formula LED device can be isolated water oxygen, guarantees its luminous efficacy, and then improves white light device's environmental stability.
Another object of the present application is to provide a method for manufacturing an LED device, which can implement the clad arrangement of the nanocrystals, so that the nanocrystals can isolate water and oxygen, thereby ensuring the luminous efficiency and further improving the environmental stability of the white light device.
In order to achieve the above purpose, the present application is implemented by adopting the following technical solutions.
In a first aspect, an embodiment of the present invention provides a clad LED device, including:
an LED chip;
a light conversion layer disposed on the LED chip;
wherein the light conversion layer comprises nanocrystals and a polymer mixed with each other, and the nanocrystals are encapsulated in the polymer.
In an alternative embodiment, a thermal insulation barrier layer is further arranged between the light conversion layer and the LED chip to isolate the LED chip from the light conversion layer.
In an alternative embodiment, the thermally insulating barrier comprises an insulating polymer coated over the LED chip.
In an alternative embodiment, a heat dissipation layer is further disposed between the light conversion layer and the LED chip, so as to dissipate heat of the LED chip.
In an alternative embodiment, the heat dissipation layer comprises a conductive polymer coated on the LED chip.
In an alternative embodiment, the nanocrystals are zinc oxide nanocrystals.
In a second aspect, an embodiment of the present invention provides a method for manufacturing an LED device, including:
coating a mixture of nanocrystals and a polymer on an LED chip and forming a light conversion layer;
wherein the nanocrystals are encapsulated in the polymer.
In an alternative embodiment, before the step of coating the light conversion layer on the LED chip, the method further includes:
an insulating polymer is coated on the LED chip and a thermally insulating barrier is formed.
In an alternative embodiment, before the step of coating the light conversion layer on the LED chip, the method further includes:
and coating a conductive polymer on the LED chip and forming a heat dissipation layer.
In an alternative embodiment, before the step of coating the light conversion layer on the LED chip, the method further includes:
preparing nanocrystalline by a low-temperature sol-gel method;
mixing the nanocrystals with the polymer such that the nanocrystals are encapsulated in the polymer.
Through above-mentioned technical scheme, the cladding formula LED device that this application provided, through mixing nanocrystalline and polymer, nanocrystalline evenly disperses in the polymer to by the polymer parcel, the isolation water oxygen. And then coating the polymer-coated nanocrystals on the LED chip coated with the heat insulation interlayer to be used as an LED light conversion material, and combining the LED chip to form white light illumination or display backlight and the like. Compared with the prior art, the coating type LED device provided by the application can prevent moisture or oxygen from contacting with the nanocrystalline particles through polymer isolation water and oxygen, so that the influence of water and oxygen on the nanocrystalline particles is avoided, the luminous efficiency of the nanocrystalline is ensured, and the environmental stability of the white light device is further improved.
Additional features and advantages of the present application will be set forth in the detailed description which follows.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered limiting the scope, and that other related drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic structural diagram of a clad LED device according to a first embodiment of the present disclosure;
fig. 2 is a schematic structural diagram of a clad LED device according to a third embodiment of the present disclosure;
fig. 3 is a block diagram of steps of a method for manufacturing an LED device according to a fourth embodiment of the present disclosure;
fig. 4 is a block diagram illustrating steps of a method for manufacturing an LED device according to a fifth embodiment of the present application.
Icon: 100-clad LED device; a 110-LED chip; 130-a light conversion layer; 150-insulating barrier/heat sink layer; 170-ultraviolet light filter layer.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present application more clear, the technical solutions of the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. It will be apparent that the embodiments described are some, but not all, of the embodiments of the present application. The components of the embodiments of the present application, which are generally described and illustrated in the figures herein, may be arranged and designed in a wide variety of different configurations.
In the description of the present application, it should be noted that, the azimuth or positional relationship indicated by the terms "inner", "outer", etc. are based on the azimuth or positional relationship shown in the drawings, or the azimuth or positional relationship that is commonly put when the product of the application is used, are merely for convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element to be referred to must have a specific azimuth, be configured and operated in a specific azimuth, and therefore should not be construed as limiting the present application. Furthermore, the terms "first," "second," and the like, are used merely to distinguish between descriptions and should not be construed as indicating or implying relative importance.
In the description of the present application, it should also be noted that, unless explicitly specified and limited otherwise, the terms "disposed," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the terms in this application will be understood by those of ordinary skill in the art in a specific context.
First embodiment
Referring to fig. 1, an embodiment of the present invention provides a coated LED device 100, where the coated LED device 100 can isolate water and oxygen, ensure the light emitting efficiency thereof, and further improve the environmental stability of a white light device.
The coated LED device 100 provided in this embodiment includes an LED chip 110 and a light conversion layer 130 disposed on the LED chip 110, wherein the light conversion layer 130 includes nanocrystals and a polymer mixed with each other, and the nanocrystals are coated in the polymer. Specifically, the light conversion layer 130 is formed by uniformly mixing the nanocrystals and the polymer coated on the surface of the LED chip 110 after curing, and has a thickness of between 0.01mm and 2mm, preferably 1mm.
In this embodiment, the LED chip 110 is a blue LED chip 110, which has high light emitting efficiency, and the light conversion layer 130 is disposed on the light emitting side of the LED chip 110, and white light is formed after conversion by the light conversion layer 130, so that the whole device is used in the field of back panel display or illumination. Meanwhile, the LED chip 110 is packaged and disposed on a support, and epoxy resin is filled around the support, and a heat sink is further disposed on the support, and the LED chip 110 is coupled to the heat sink through an electrically and thermally conductive bonding material, such as solder, adhesive, coating, film, sealant, paste, grease, and/or other suitable materials, for heat dissipation through the heat sink.
It should be noted that, in this embodiment, the nanocrystalline and the polymer are mixed according to a certain proportion, where the ratio of the polymer should be greater than or equal to the ratio of the nanocrystalline, and after sufficient mixing, it can be ensured that the nanocrystalline particles are all coated in the polymer.
The nanocrystals mentioned in the present embodiment refer to semiconductor materials using nano-sized crystals (nano crystals), and preferably, a mixture of zinc oxide nanocrystals (ZnO) and polymers is used as a light conversion material in the present embodiment, which is coated on the LED chip 110. Wherein the size of the zinc oxide nanocrystals (ZnO) is between 5nm and 15nm, preferably 7nm.
In this embodiment, zinc oxide nanocrystals (ZnO) are prepared by a low-temperature sol-gel method using a methanol solution of zinc acetate dihydrate and potassium hydroxide as precursors, and then the prepared zinc oxide nanocrystals (ZnO) are uniformly mixed with a polymer, and the mixed particles are coated on the LED chip 110 to be cured to form the light conversion layer 130. And the fluorescence emission peak of the zinc oxide nanocrystalline (ZnO) is between 380nm and 780nm, preferably, the emission peak of the zinc oxide nanocrystalline (ZnO) is 600nm in the embodiment.
In this embodiment, the polymer is any one or a combination of at least two of polystyrene, polyvinylidene fluoride, polyethylene, polyacrylic acid, or polymethyl methacrylate, preferably polyacrylic acid. Specifically, the mixing process of the polymer and zinc oxide nanocrystals (ZnO) is as follows: after preparing zinc oxide nanocrystals (ZnO) by a low temperature sol-gel method, adding a polymer into a solvent, adding a polar solvent such as an alcohol solvent to swell to obtain nanocrystal-polymer composite particles, adding transparent adhesive, and finally coating the mixture on the LED chip 110 to form the light conversion layer 130 after curing.
A thermal insulation barrier 150 is further provided between the light conversion layer 130 and the LED chip 110 to isolate the LED chip 110 from the light conversion layer 130. Specifically, a thermal isolation layer is provided on the light emitting side of the LED chip 110, which is capable of isolating heat generated by the LED chip 110 from the light conversion layer 130. Since the zinc oxide nanocrystals (ZnO) have a small particle size and are sensitive to heat, by providing a heat insulating layer, overheating of the zinc oxide nanocrystals (ZnO) in the light conversion layer 130 can be avoided and the stability thereof can be improved.
In this embodiment, the insulating barrier 150 includes an insulating polymer coated on the LED chip 110. Specifically, the insulating polymer is a transparent resin, and the insulating interlayer 150 is formed by curing an insulating polymer such as a silicone resin or an epoxy resin coated on the LED chip 110, and mainly plays a role in insulating heat generated by the LED chip 110, and does not affect light emission of the LED chip 110.
In other preferred embodiments of the present invention, a vacuum insulation chamber is further provided at the middle of the insulation barrier 150 to enhance the insulation effect of the insulation barrier 150.
In the actual manufacturing process, it is necessary to coat an insulating polymer on the light emitting side of the LED chip 110 and cure the insulating polymer to form the insulating barrier 150, and then coat mixed particles of zinc oxide nanocrystals (ZnO) and polymer on the LED chip 110 coated with the insulating barrier 150 and cure the mixed particles to form the light conversion layer 130. It is noted that the solvent used herein in preparing the mix particles should not corrode the insulating barrier 150, i.e., the insulating polymer is insoluble in the solvent.
In this embodiment, the light emission peak of the LED chip 110 is 360nm or less, preferably 320nm. And combining zinc oxide nanocrystals (ZnO) with luminescence peaks between 380nm and 780nm to form white light illumination or display backlight.
In summary, the embodiment provides a coated LED device 100, which isolates water and oxygen through coating zinc oxide nanocrystals (ZnO) with polymers, thereby improving the environmental stability of the device, and meanwhile, the heat insulation interlayer 150 is disposed on the surface of the LED chip 110, so that the heat generated by the LED chip 110 can be effectively isolated from the light conversion layer 130, the thermal stability of the zinc oxide nanocrystals (ZnO) is improved, and finally, the environmental stability of the white light device is significantly improved.
Second embodiment
With continued reference to fig. 1, this embodiment provides a covered LED device 100, which has the same basic structure and principle and technical effects as those of the first embodiment, and for brevity, reference is made to the corresponding parts of the first embodiment.
The coated LED device 100 provided in this embodiment includes an LED chip 110 and a light conversion layer 130 disposed on the LED chip 110, wherein the light conversion layer 130 includes nanocrystals and a polymer mixed with each other, and the nanocrystals are coated in the polymer.
In the present embodiment, a heat dissipation layer 150 is further disposed between the light conversion layer 130 and the LED chip 110 to dissipate heat from the LED chip 110. Specifically, the heat dissipation layer 150 is disposed on the light emitting side of the LED chip 110, and can rapidly dissipate the heat generated by the LED chip 110 from the periphery, so as to avoid heat from being concentrated at the junction of the light conversion layer 130 and the heat dissipation layer 150, avoid overheating of zinc oxide nanocrystals (ZnO) in the light conversion layer 130, and improve the stability of the device.
In this embodiment, the heat dissipation layer 150 includes a conductive polymer coated on the LED chip 110. Specifically, the conductive polymer is made of a transparent material, and the heat dissipation layer 150 is formed by curing a graphene transparent conductive film coated on the LED chip 110, and has a main function of timely dissipating heat generated by the LED chip 110 from the periphery to the outside, and meanwhile, does not affect the light emission of the LED chip 110. Of course, other conductive polymers, such as doped polymer materials, may be used for the heat dissipation layer 150.
Third embodiment
Referring to fig. 2, the present embodiment provides a covered LED device 100, whose basic structure and principle and technical effects are the same as those of the first embodiment, and for brevity, reference is made to the corresponding contents of the first embodiment where the description of the embodiment is not mentioned.
The coated LED device 100 provided in this embodiment includes an LED chip 110 and a light conversion layer 130 disposed on the LED chip 110, wherein the light conversion layer 130 includes nanocrystals and a polymer mixed with each other, and the nanocrystals are coated in the polymer. A thermal insulation barrier 150 is further provided between the light conversion layer 130 and the LED chip 110 to isolate the LED chip 110 from the light conversion layer 130. Specifically, a thermal isolation layer is provided on the light emitting side of the LED chip 110, which is capable of isolating heat generated by the LED chip 110 from the light conversion layer 130. Since the zinc oxide nanocrystals (ZnO) have a small particle size and are sensitive to heat, by providing a heat insulating layer, overheating of the zinc oxide nanocrystals (ZnO) in the light conversion layer 130 can be avoided and the stability thereof can be improved.
In this embodiment, the surface of the light conversion layer 130 far from the heat isolation layer is further provided with an ultraviolet light filter layer 170, and specifically, the ultraviolet light filter layer 170 is adhered to the surface of the light conversion layer 130 far from the LED chip 110 through transparent adhesive. By providing the ultraviolet light filter layer 170, ultraviolet light in light emitted after being converted by the light conversion layer 130 can be filtered out, and ultraviolet light with a wavelength less than or equal to 360nm can be filtered out, thereby avoiding damage to human bodies.
It should be noted that, the uv filter layer 170 is a filter, and the filter completely covers the upper surface of the light conversion layer 130, so that uv light with a specific wavelength in the white light converted by the light conversion layer 130 can be filtered, thereby avoiding damage to a user.
Fourth embodiment
Referring to fig. 3, the present embodiment provides a method for manufacturing an LED device, for manufacturing the coated LED device 100 as provided in the first embodiment. The preparation method of the LED device comprises the following steps:
s1: the nanocrystals are mixed with the polymer such that the nanocrystals are encapsulated in the polymer.
Specifically, the nanocrystalline adopts zinc oxide nanocrystalline (ZnO), and before the mixing step, the preparation method further comprises the steps of: the nanocrystalline is prepared by a low-temperature sol-gel method. Specifically, zinc oxide nanocrystalline (ZnO) is prepared by taking methanol solution of zinc acetate dihydrate and potassium hydroxide as precursors and adopting a low-temperature sol-gel method, and then the prepared zinc oxide nanocrystalline (ZnO) is uniformly mixed with a polymer.
In this embodiment, the polymer is any one or a combination of at least two of polystyrene, polyvinylidene fluoride, polyethylene, polyacrylic acid, or polymethyl methacrylate, preferably polystyrene. Specifically, the mixing process of the polymer and zinc oxide nanocrystals (ZnO) is as follows: after zinc oxide nanocrystalline (ZnO) is prepared by adopting a low-temperature sol-gel method, methyl methacrylate, hydroxyethyl methacrylate and glycidyl methacrylate are simultaneously stirred and mixed uniformly, azodiisobutyronitrile is added into the mixture, stirring is carried out to dissolve the azodiisobutyronitrile, dioxane is added into the mixture, and stirring and mixing are carried out uniformly. Adding the mixture into the mixture at the temperature of 75 ℃ and stirring the mixture to react until the viscosity of the polymer reaches the standard, and cooling the mixture to stop the reaction. Mixing a photoinitiator, 2-isopropyl thioxanthone, glycidyl methacrylate and pentaerythritol triacrylate, introducing the mixture into the mixture, adding a zinc oxide nanocrystalline solution, stirring until the mixture is uniformly mixed to obtain nanocrystalline-polymer composite particles, and adding transparent glue.
S2: an insulating polymer is coated on the LED chip 110 and a heat insulating barrier 150 is formed.
Specifically, the insulating barrier 150 includes an insulating polymer. The thermal isolation layer is disposed at the light emitting side of the LED chip 110, and is capable of isolating heat generated from the LED chip 110 from the light conversion layer 130. Since the zinc oxide nanocrystals (ZnO) have a small particle size and are sensitive to heat, by providing a heat insulating layer, overheating of the zinc oxide nanocrystals (ZnO) in the light conversion layer 130 can be avoided and the stability thereof can be improved. In this embodiment, the insulating polymer is transparent resin, and the insulating interlayer 150 is formed by curing an insulating polymer such as silicone resin or epoxy resin coated on the LED chip 110, and mainly plays a role of insulating heat generated by the LED chip 110, and does not affect light emission of the LED chip 110.
S3: a mixture of nanocrystals and a polymer is coated on the LED chip 110 and a light conversion layer 130 is formed.
Specifically, a mixture of zinc oxide nanocrystals (ZnO) and a polymer is coated on the light emitting side of the LED chip 110 in the present embodiment, wherein the light conversion layer 130 includes nanocrystals and a polymer mixed with each other, and the nanocrystals are encapsulated in the polymer. And the light conversion layer 130 is covered on the heat insulation barrier 150.
In this embodiment, the nanocrystals and the polymer are mixed according to a certain proportion, wherein the ratio of the polymer is equal to or greater than the ratio of the nanocrystals, and after sufficient mixing, it can be ensured that the nanocrystal particles are all coated in the polymer. Finally, a mixture of zinc oxide nanocrystals (ZnO) and a polymer is coated on the LED chip 110, and the light conversion layer 130 is formed after curing.
According to the preparation method of the LED device, zinc oxide nanocrystals (ZnO) and polymers can be coated, meanwhile, the heat insulation interlayer 150 is arranged, so that water and oxygen can be isolated, heat generated by the LED chip 110 can be effectively isolated from the light conversion layer 130, the thermal stability of the zinc oxide nanocrystals (ZnO) is improved, and finally the environmental stability of a white light device is remarkably improved.
Fifth embodiment
Referring to fig. 4, the present embodiment provides a method for manufacturing an LED device, for manufacturing the covered LED device 100 as provided in the second embodiment. The preparation method of the LED device comprises the following steps:
s1: the nanocrystals are mixed with the polymer such that the nanocrystals are encapsulated in the polymer.
Specifically, the nanocrystalline adopts zinc oxide nanocrystalline (ZnO), and before the mixing step, the preparation method further comprises the steps of: the nanocrystalline is prepared by a low-temperature sol-gel method. Specifically, zinc oxide nanocrystalline (ZnO) is prepared by taking methanol solution of zinc acetate dihydrate and potassium hydroxide as precursors and adopting a low-temperature sol-gel method, and then the prepared zinc oxide nanocrystalline (ZnO) is uniformly mixed with a polymer.
In this embodiment, the polymer is any one or a combination of at least two of polystyrene, polyvinylidene fluoride, polyethylene, polyacrylic acid, or polymethyl methacrylate, preferably polyacrylic acid. Specifically, the mixing process of the polymer and zinc oxide nanocrystals (ZnO) is as follows: after preparing zinc oxide nanocrystalline (ZnO) by adopting a low-temperature sol-gel method, adding a polymer into a solvent, adding a polar solvent such as an alcohol solvent for swelling to obtain nanocrystalline-polymer composite particles, and adding transparent adhesive.
S2: a conductive polymer is coated on the LED chip 110 and a heat dissipation layer 150 is formed.
Specifically, the heat dissipation layer 150 includes a conductive polymer. The heat dissipation layer 150 is disposed at the light emitting side of the LED chip 110, and is capable of rapidly dissipating heat generated from the LED chip 110 from the periphery. Since the zinc oxide nanocrystals (ZnO) have a small particle size and are sensitive to heat, the provision of the heat dissipation layer 150 can prevent the zinc oxide nanocrystals (ZnO) in the light conversion layer 130 from overheating and improve the stability thereof. In this embodiment, the conductive polymer is made of a transparent material, and the heat dissipation layer 150 is formed by curing a graphene transparent conductive film coated on the LED chip 110, and mainly plays a role in timely dissipating heat generated by the LED chip 110 from the periphery to the outside, and does not affect the light emission of the LED chip 110.
S3: a mixture of nanocrystals and a polymer is coated on the LED chip 110 and a light conversion layer 130 is formed.
Specifically, a mixture of zinc oxide nanocrystals (ZnO) and a polymer is coated on the light emitting side of the LED chip 110 in the present embodiment, wherein the light conversion layer 130 includes nanocrystals and a polymer mixed with each other, and the nanocrystals are encapsulated in the polymer.
In this embodiment, the nanocrystals and the polymer are mixed according to a certain proportion, wherein the ratio of the polymer is equal to or greater than the ratio of the nanocrystals, and after sufficient mixing, it can be ensured that the nanocrystal particles are all coated in the polymer. Finally, a mixture of zinc oxide nanocrystals (ZnO) and a polymer is coated on the LED chip 110, and the light conversion layer 130 is formed after curing.
According to the preparation method of the LED device, the zinc oxide nanocrystalline (ZnO) and the polymer can be coated, meanwhile, the heat dissipation layer 150 is arranged, the heat generated by the LED chip 110 can be effectively dissipated while water and oxygen are isolated, the thermal stability of the zinc oxide nanocrystalline (ZnO) is improved, and finally the environmental stability of the white light device is obviously improved.
It should be noted that, without conflict, features in the embodiments of the present application may be combined with each other.
The foregoing description is only of the preferred embodiments of the present application and is not intended to limit the same, but rather, various modifications and variations may be made by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principles of the present application should be included in the protection scope of the present application.
Claims (10)
1. A coated LED device, comprising:
an LED chip;
a light conversion layer disposed on the LED chip;
wherein the light conversion layer comprises nanocrystals and a polymer mixed with each other, and the nanocrystals are encapsulated in the polymer;
wherein the polymer is any one or the combination of at least two of polystyrene, polyvinylidene fluoride, polyethylene, polyacrylic acid or polymethyl methacrylate, and the mixing process of the polymer and the nanocrystalline is as follows: after preparing nanocrystalline by adopting a low-temperature sol-gel method, adding a polymer into a solvent, adding a polar solvent such as an alcohol solvent for swelling to obtain nanocrystalline-polymer composite particles, adding transparent adhesive, finally coating the mixture on the LED chip, and curing to form the light conversion layer.
2. The encapsulated LED device of claim 1, wherein a thermally insulating barrier is further disposed between the light conversion layer and the LED chip to isolate the LED chip from the light conversion layer.
3. The covered LED device of claim 2, wherein the thermally insulating barrier layer comprises an insulating polymer coated over the LED chip.
4. The coated LED device of claim 1, wherein a heat sink layer is further disposed between the light conversion layer and the LED chip to dissipate heat from the LED chip.
5. The encapsulated LED device of claim 4, wherein the heat dissipation layer comprises a conductive polymer coated on the LED chip.
6. The coated LED device of claim 1, wherein the nanocrystals are zinc oxide nanocrystals.
7. A method of manufacturing an LED device, comprising:
coating a mixture of nanocrystals and a polymer on an LED chip and forming a light conversion layer;
wherein the nanocrystals are encapsulated in the polymer;
wherein the polymer is any one or the combination of at least two of polystyrene, polyvinylidene fluoride, polyethylene, polyacrylic acid or polymethyl methacrylate, and the mixing process of the polymer and the nanocrystalline is as follows: after preparing nanocrystalline by adopting a low-temperature sol-gel method, adding a polymer into a solvent, adding a polar solvent such as an alcohol solvent for swelling to obtain nanocrystalline-polymer composite particles, adding transparent adhesive, finally coating the mixture on the LED chip, and curing to form the light conversion layer.
8. The method of manufacturing an LED device of claim 7, further comprising, prior to said step of applying a light conversion layer to the LED chip:
an insulating polymer is coated on the LED chip and a thermally insulating barrier is formed.
9. The method of manufacturing an LED device of claim 7, further comprising, prior to said step of applying a light conversion layer to the LED chip:
and coating a conductive polymer on the LED chip and forming a heat dissipation layer.
10. The method of manufacturing an LED device of claim 7, further comprising, prior to said step of applying a light conversion layer to the LED chip:
preparing nanocrystalline by a low-temperature sol-gel method;
mixing the nanocrystals with the polymer such that the nanocrystals are encapsulated in the polymer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910693553.2A CN110379909B (en) | 2019-07-30 | 2019-07-30 | Cladding type LED device and preparation method of LED device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910693553.2A CN110379909B (en) | 2019-07-30 | 2019-07-30 | Cladding type LED device and preparation method of LED device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110379909A CN110379909A (en) | 2019-10-25 |
| CN110379909B true CN110379909B (en) | 2024-02-13 |
Family
ID=68256903
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910693553.2A Active CN110379909B (en) | 2019-07-30 | 2019-07-30 | Cladding type LED device and preparation method of LED device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110379909B (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109509841A (en) * | 2018-10-08 | 2019-03-22 | 纳晶科技股份有限公司 | Zinc oxide nanocrystalline, preparation method, nanocrystalline composition and quantum dot light emitting device comprising it |
| CN210052759U (en) * | 2019-07-30 | 2020-02-11 | 广东省半导体产业技术研究院 | Cladding type LED device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI378575B (en) * | 2008-10-01 | 2012-12-01 | Silitek Electronic Guangzhou | Light emitting diode device and manufacturing method thereof |
-
2019
- 2019-07-30 CN CN201910693553.2A patent/CN110379909B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109509841A (en) * | 2018-10-08 | 2019-03-22 | 纳晶科技股份有限公司 | Zinc oxide nanocrystalline, preparation method, nanocrystalline composition and quantum dot light emitting device comprising it |
| CN210052759U (en) * | 2019-07-30 | 2020-02-11 | 广东省半导体产业技术研究院 | Cladding type LED device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110379909A (en) | 2019-10-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Zhang et al. | All-inorganic light convertor based on phosphor-in-glass engineering for next-generation modular high-brightness white LEDs/LDs | |
| Sohn et al. | Stacked quantum dot embedded silica film on a phosphor plate for superior performance of white light-emitting diodes | |
| CN104100933B (en) | A kind of Wavelength converter and preparation method thereof, related lighting fixtures | |
| JP5519440B2 (en) | Light emitting device | |
| US8098005B2 (en) | White light emitting device | |
| JP5744386B2 (en) | Optical semiconductor encapsulant | |
| JP5966539B2 (en) | Inorganic molded body for wavelength conversion, method for producing the same, and light emitting device | |
| US20070108463A1 (en) | Light-emitting diode with UV-blocking nano-particles | |
| CN108388050A (en) | A kind of preparation method of quantum dot film leaded light component and its corresponding backlight module | |
| JP2014236202A (en) | Light-emitting device | |
| EP3144985A1 (en) | Phosphor ceramic, sealed optical semiconductor element, circuit board, optical semiconductor device and light-emitting device | |
| TW201205900A (en) | Component for light-emitting device, light-emitting device and producing method thereof | |
| TW201238088A (en) | Light emitting diode package and method for making it | |
| JP5366587B2 (en) | Processed sheet for optical semiconductor encapsulation | |
| CN102544312A (en) | Optical semiconductor device | |
| JP2008258334A (en) | Light-emitting device and its manufacturing method | |
| WO2020063485A1 (en) | Manufacturing process of light-emitting part and light-emitting part | |
| WO2021056935A1 (en) | Chip scale package structure for moisture-sensitive high-gamut backlight applications, and manufacturing method | |
| CN111187610A (en) | Composite quantum dot material, preparation method and display device thereof | |
| TWI523279B (en) | Light emitting diode device with full azimuth and its packaging method | |
| JP2012052061A (en) | Phosphor composite member | |
| EP3331042B1 (en) | Encapsulation material, organic light-emitting diode device and encapsulation method therefor | |
| JP2013138216A (en) | Light-emitting device | |
| CN210052759U (en) | Cladding type LED device | |
| CN110379909B (en) | Cladding type LED device and preparation method of LED device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |