CN110364584A - 基于局域表面等离激元效应的深紫外msm探测器及制备方法 - Google Patents
基于局域表面等离激元效应的深紫外msm探测器及制备方法 Download PDFInfo
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Abstract
本发明提供基于局域表面等离激元效应的深紫外MSM探测器及制备方法，其结构从下至上包括：衬底、缓冲层、超短周期超晶格及金属电极；超短周期超晶格包括设置在超短周期超晶格的纳米孔阵，以及金属纳米颗粒；金属纳米颗粒注入在纳米孔阵空隙或沉积于超短周期超晶格上表面，颗粒尺寸可调控；金属电极设置在超短周期超晶格上，形成肖特基接触。本发明通过在有序分布的纳米孔阵中形成金属纳米颗粒再在其上设置金属电极，避免了超短周期超晶格吸收层载流子隧穿能力较弱问题，又利用产生的局域表面等离激元效应，增强深紫外光的吸收，最终提高深紫外MSM探测器的量子效率。
Description
技术领域
本发明涉及半导体光电子器件制造领域，特别是一种基于局域表面等离激元效应的深紫外MSM探测器及制备方法。
背景技术
随着19世纪末紫外光被人们的认知，紫外探测技术迅速崛起，在军事和民用领域得到广泛地应用，已成为国内外关注的热点。MSM探测器作为紫外探测器家族的重要成员之一，相较于其它结构的探测器，具有响应度大、紫外/可见光抑制比高、响应速度快、暗电流低等得天独厚的优势。
由于AlGaN半导体材料的带隙宽、热导率和电子迁移率较高，因此AlGaN材料被公认是制作紫外和深紫外探测器的首选材料。然而，通常AlGaN材料的位错密度较高，在外延过程中降低AlGaN体材料的位错密度仍然有难度，也对探测器的性能提出挑战。近年来，利用金属纳米颗粒产生的局域表面等离激元效应来提高探测器的光吸收效率已成为一个有效途径。这是因为，金属纳米颗粒在特定波长的光照下会发生能量共振，产生电荷集聚和振荡效应，形成的局域表面等离极化激元在远场表现出的散射增强特性具有增加光吸收率的显著优势，因此将最终提高探测器的外量子效率。
中国发明申请201810708469.9提出了一种纳米孔阵贯穿超短周期超晶格的深紫外MSM探测器结构，通过将金属电极设置在纳米孔阵贯穿型超短周期超晶格上，同时将金属注入到纳米孔阵列的空隙，金属电极能收集到较深处超晶格产生的载流子，提高了金属电极的收集效率和器件的响应光电流。然而，该探测结构的量子效率仍不能满足实际需求，亟待进一步提高该结构深紫外MSM探测器的量子效率。
发明内容
本发明的基于局域表面等离激元效应的深紫外MSM探测器及制备方法，在已有有序分布于超短周期超晶格的纳米孔阵结构基础之上，引入金属纳米颗粒产生局域表面等离激元效应，利用局域表面等离激元效应有效增强光吸收，进一步提升该结构深紫外MSM探测器的响应度和量子效率。
本发明采用如下技术方案：
基于局域表面等离激元效应的深紫外MSM探测器，其特征在于：包括由下至上衬底、缓冲层、超短周期超晶格以及金属电极；该超短周期超晶格设有纳米孔阵和金属纳米颗粒，该纳米孔阵有序分布于超短周期超晶格，该金属纳米颗粒注入纳米孔阵空隙或沉积于超短周期超晶格上表面，颗粒尺寸可调控；金属电极设置在超短周期超晶格上，形成肖特基接触。
所述衬底为同质衬底，该同质衬底为氮化镓或氮化铝单晶。
所述衬底为异质衬底，该异质衬底为蓝宝石或碳化硅或单晶硅。
所述超短周期超晶格采用两种禁带宽度不同的半导体材料交替生长而成。
所述两种禁带宽度不同的半导体材料为氮化镓单晶或氮化铝单晶或铝镓氮混晶中的任意两种。
所述金属纳米颗粒为铑颗粒或银颗粒或铝颗粒中的任意一种。
所述金属纳米颗粒直径范围为20nm-70nm。
所述纳米孔阵周期范围为200nm-600nm。
所述金属电极为金、铬/金、镍/金、钛/金组合中的任意一种。
基于局域表面等离激元效应的深紫外MSM探测器制备方法，其特征在于：
1)制作衬底；
2)在衬底上生长缓冲层；
3)在缓冲层生长超短周期超晶格；
4)利用纳米压印、感应耦合等离子体刻蚀技术形成有序分布于超短周期超晶格的纳米孔阵；
5)采用高真空热蒸发技术沉积金属铝薄膜；
6)制备金属电极；
7)在氮气氛围下，400℃低温退火60s，金属铝薄膜形成铝纳米颗粒结构，且形成金属电极与铝纳米颗粒嵌入的纳米孔阵式超短周期超晶格的肖特基接触。
由上述对本发明的描述可知，与现有技术相比，本发明具有如下有益效果：本发明提供的基于局域表面等离激元效应的深紫外MSM探测器及制备方法，通过在有序分布在超短周期超晶格的纳米孔阵中形成金属纳米颗粒，产生局域表面等离激元效应，从而有效增强对深紫外光子的吸收，进一步提高深紫外MSM探测器的响应度和量子效率。
附图说明
图1为本发明基于局域表面等离激元效应的深紫外MSM探测器的结构图。其中1表示衬底，2表示缓冲层，3表示超短周期超晶格，4表示金属纳米颗粒，5表示金属电极，6表示纳米孔阵。
具体实施方式
以下通过具体实施方式对本发明作进一步的描述。本发明的各附图仅为示意以更容易了解本发明，其具体比例可依照设计需求进行调整。文中所描述的图形中相对元件的上下关系，在本领域技术人员应能理解是指构件的相对位置而言，对应的，以元件在上一面为正面、在下一面为背面以便于理解，因此皆可以翻转而呈现相同的构件，此皆应同属本说明书所揭露的范围。
本发明的基于局域表面等离激元效应的深紫外MSM探测器，其器件结构从下到上依次包括：衬底1，缓冲层2，超短周期超晶格3，分布于超短周期超晶格的金属纳米颗粒4和金属电极5。
本发明所述的衬底1为同质衬底或异质衬底。当衬底1为同质衬底时，为氮化镓或氮化铝单晶；当衬底1为异质衬底时，为蓝宝石或碳化硅或单晶硅。在本实施例中，如衬底1为蓝宝石衬底，由于蓝宝石衬底与氮化镓单晶存在较大的晶格失配，可外延生长厚度约为1微米的氮化铝缓冲层2。
本发明所述的超短周期超晶格3为氮化镓/铝镓氮组合或铝镓氮/氮化铝组合或氮化镓/氮化铝组合中的任意一个，经纳米压印、感应耦合等离子体刻蚀等技术形成周期性有序的纳米孔阵结构；设置在超短周期超晶格的纳米孔阵周期和尺寸可调，周期范围为200nm-600nm，尺寸(直径)范围为70nm-130nm。
本发明的分布于超短周期超晶格的金属纳米颗粒4通过高真空热蒸发和快速热退火工艺制备而成，可改变高真空热蒸发时间、退火温度和时间来调控金属纳米颗粒的尺寸。作为优选，本实施例选用铝金属纳米颗粒，该铝金属纳米颗粒直径大小可调范围为20nm-70nm。
本发明所述的金属电极5利用标准光刻工艺制备，可以为金、铬/金、镍/金、钛/金组合中的任意一种。作为优选，本实施例选用镍/金作为金属电极。
本发明基于局域表面等离激元效应的深紫外MSM探测器及制备方法，具体制备如下：
1)采用金属有机物气相外延技术在蓝宝石衬底c面上进行外延生长。三甲基镓(TMGa)和三甲基铝(TMAl)分别作为镓源和铝源，高纯度的氨气(NH3)作为氮源，氢气作为载气。
2)在步骤1)的基础上，将蓝宝石衬底1置于H2气氛中，在1100℃高温和100Torr反应室压强下，去除表面的沾污；随后降低温度至800℃，在500Torr反应室压强下，通入TMAl和NH3，在衬底1上生长约1微米厚的氮化铝缓冲层2。
3)在步骤2)的氮化铝缓冲层2上交替生长300个周期左右的氮化镓和氮化铝，形成超短周期超晶格。通过改变TMGa、TMAl和NH3的流量及生长时间来控制氮化镓和氮化铝的生长厚度。
4)在步骤3)的超短周期超晶格上利用纳米压印、感应耦合等离子体刻蚀等技术，形成周期为460nm，孔径为120nm，孔径深度为300nm的有序分布的纳米孔阵。
5)在步骤4)有序分布于超短周期超晶格的纳米孔阵结构上，采用高真空热蒸发技术沉积厚度为10nm的金属铝薄膜。
6)制备金属电极，具体步骤如下：
6.1)对外延片进行标准清洗，依次在丙酮、乙醇及高纯度去离子水中各自超声清洗10分钟；然后用去离子水加强冲洗，去除有机物；再使用氮气吹干表面；之后，使用AZ5214E光刻胶进行涂胶、甩胶和前烘工艺，再通过德国Karl Suss MA6/BA6型双面对准光刻机进行对准和曝光，后利用反转烘、泛曝光、显影等方法形成叉指电极图形。
6.2)在室温下真空度为10-6Torr的Temescal FC2000高真空热蒸发系统中，基于6.1)步骤所获得的基底，沉积厚度为10nm和200nm的镍/金复合金属层。
6.3)使用丙酮溶液浸泡并剥离光刻胶，只保留沉积在叉指电极上的金属。
7)将上述步骤得到的样品在在氮气氛围下，400℃低温退火60s，形成铝纳米颗粒结构，同时形成镍/金电极与铝纳米颗粒嵌入的纳米孔阵式超短周期超晶格的肖特基接触。至此，完成本发明所述深紫外MSM探测器的制备。
上述仅为本发明的具体实施方式，但本发明的设计构思并不局限于此，凡利用此构思对本发明进行非实质性的改动，均应属于侵犯本发明保护范围的行为。
Claims (10)
1.基于局域表面等离激元效应的深紫外MSM探测器，其特征在于：包括由下至上衬底、缓冲层、超短周期超晶格，以及金属电极；该超短周期超晶格设有纳米孔阵和金属纳米颗粒，该纳米孔阵有序分布于超短周期超晶格，该金属纳米颗粒注入纳米孔阵空隙或沉积于超短周期超晶格上表面，颗粒尺寸可调控；金属电极设置在超短周期超晶格上，形成肖特基接触。
2.如权利要求1所述的基于局域表面等离激元效应的深紫外MSM探测器，其特征在于：所述衬底为同质衬底，该同质衬底为氮化镓或氮化铝单晶。
3.如权利要求1所述的基于局域表面等离激元效应的深紫外MSM探测器，其特征在于：所述衬底为异质衬底，该异质衬底为蓝宝石或碳化硅或单晶硅。
4.如权利要求1所述的基于局域表面等离激元效应的深紫外MSM探测器，其特征在于：所述超短周期超晶格采用两种禁带宽度不同的半导体材料交替生长而成。
5.如权利要求4所述的基于局域表面等离激元效应的深紫外MSM探测器，其特征在于：所述两种禁带宽度不同的半导体材料为氮化镓单晶或氮化铝单晶或铝镓氮混晶中的任意两种。
6.如权利要求1所述的基于局域表面等离激元效应的深紫外MSM探测器，其特征在于：所述金属纳米颗粒为铑颗粒或银颗粒或铝颗粒中的任意一种。
7.如权利要求1所述的基于局域表面等离激元效应的深紫外MSM探测器，其特征在于：所述金属纳米颗粒直径范围为20nm-70nm。
8.如权利要求1所述的基于局域表面等离激元效应的深紫外MSM探测器，其特征在于：所述纳米孔阵周期范围为200nm-600nm。
9.如权利要求1所述的基于局域表面等离激元效应的深紫外MSM探测器，其特征在于：所述金属电极为金、铬/金、镍/金、钛/金组合中的任意一种。
10.基于局域表面等离激元效应的深紫外MSM探测器制备方法，其特征在于：
1)制作衬底；
2)在衬底上生长缓冲层；
3)在缓冲层生长超短周期超晶格；
4)利用纳米压印、感应耦合等离子体刻蚀技术形成有序分布于超短周期超晶格的纳米孔阵；
5)采用高真空热蒸发技术沉积金属铝薄膜；
6)制备金属电极；
7)在氮气氛围下，400℃低温退火60s，金属铝薄膜形成铝纳米颗粒结构，且形成金属电极与超短周期超晶格的肖特基接触。
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