CN110364519B - Photoelectric coupler, manufacturing method and using method thereof - Google Patents
Photoelectric coupler, manufacturing method and using method thereof Download PDFInfo
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- CN110364519B CN110364519B CN201910725044.3A CN201910725044A CN110364519B CN 110364519 B CN110364519 B CN 110364519B CN 201910725044 A CN201910725044 A CN 201910725044A CN 110364519 B CN110364519 B CN 110364519B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 238000000034 method Methods 0.000 title claims abstract description 15
- 239000011247 coating layer Substances 0.000 claims abstract description 69
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 56
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 56
- 239000010410 layer Substances 0.000 claims abstract description 53
- 238000006243 chemical reaction Methods 0.000 claims abstract description 17
- 239000003822 epoxy resin Substances 0.000 claims abstract description 14
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 14
- 238000005476 soldering Methods 0.000 claims abstract description 11
- 238000003466 welding Methods 0.000 claims abstract description 11
- 239000000203 mixture Substances 0.000 claims description 20
- 239000002243 precursor Substances 0.000 claims description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
- 239000011248 coating agent Substances 0.000 claims description 11
- 238000000576 coating method Methods 0.000 claims description 11
- 239000000741 silica gel Substances 0.000 claims description 11
- 229910002027 silica gel Inorganic materials 0.000 claims description 11
- 238000002156 mixing Methods 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 8
- 238000005452 bending Methods 0.000 claims description 4
- 238000001746 injection moulding Methods 0.000 claims description 4
- 238000011049 filling Methods 0.000 claims description 3
- 229920001296 polysiloxane Polymers 0.000 claims description 2
- 230000005693 optoelectronics Effects 0.000 claims 1
- 238000001723 curing Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 238000005253 cladding Methods 0.000 description 5
- 230000008859 change Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000499 gel Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- APGXRXFCBZKIAN-BYCMXARLSA-N modephene Chemical compound C1CC[C@@]23[C@H](C)CC[C@@]31C(C)(C)C=C2C APGXRXFCBZKIAN-BYCMXARLSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Abstract
The invention discloses a photoelectric coupler, a manufacturing method and a using method thereof, wherein the photoelectric coupler comprises the following components: the pin of the light-emitting source is connected with the signal input end to receive the signal transmitted by the signal input end, and the light-emitting source can emit light; the light receiver is arranged opposite to the light emitting source and can receive light rays and generate photocurrent; an insulating layer between the light source and the light receiver to isolate the light source and the light receiver, the insulating layer comprising an epoxy resin; the coating layer is arranged between the light-emitting source and the insulating layer or between the light receiver and the insulating layer, at least one part of light emitted by the light-emitting source irradiates the light receiver after passing through the coating layer, the coating layer contains graphene oxide, the graphene oxide can be heated and converted into graphene during welding, and the graphene can absorb the light emitted by the light source to reduce the increase of the photoelectric conversion coefficient after reflow soldering. The photoelectric coupler can realize low photoelectric conversion rate offset.
Description
Technical Field
The invention relates to the technical field of optical isolation coupling devices, in particular to a photoelectric coupler, a manufacturing method and a using method of the photoelectric coupler.
Background
The photoelectric coupler is an electric-optical-electric conversion device for transmitting electric signals by taking light as a medium, and generally consists of a light emitting source and a light receiver. The light-emitting source and the light receiver are assembled in the same airtight shell and are isolated by an insulator, the insulator is generally filled with epoxy resin, the epoxy resin is divided into an inner layer and an outer layer, the inner layer is white epoxy resin, light emitted by the light-emitting source penetrates through the light receiver, the outer layer is black epoxy resin and is used for shielding ambient light, and the anti-interference capability of the photoelectric coupler is improved. The pins of the light-emitting source are input ends, the pins of the light receiver are output ends, the common light-emitting source is a light-emitting diode, and the light receiver is a photodiode, a phototriode and the like. The photocurrent conversion Coefficient (CTR) of the existing photoelectric coupler is obviously increased after 1-3 times of reflow soldering, and the increase amplitude is generally greater than 25%. The reason for the increase in the photocurrent conversion Coefficient (CTR) is thought to be that the silicon gel of the wafer or the wafer-coated silicon gel peels off from the inner epoxy resin after reflow soldering, so that more light from the light source passes through the white epoxy resin to reach the light receiver. More recent experiments have shown that an increase in the photocurrent conversion Coefficient (CTR) may be caused by an increase in the light transmittance of the inner layer of epoxy after less than 3 reflow passes. However, any mode of increasing the current conversion coefficient can cause deviation between the factory marked photoelectric conversion coefficient of the photoelectric coupler and the actual use value of the client, and influence the use of the client.
Disclosure of Invention
The present invention aims to solve at least one of the technical problems existing in the prior art.
Therefore, the invention provides the photoelectric coupler which is simple to assemble and convenient to use.
The invention also provides a manufacturing method of the photoelectric coupler, which has simple steps and is convenient to operate.
The invention also provides a using method of the photoelectric coupler, which is convenient to implement and can effectively realize low photoelectric conversion rate offset of the photoelectric coupler.
An embodiment of a photocoupler according to a first aspect of the present invention includes: the pin of the light-emitting source is connected with the signal input end to receive the signal transmitted by the signal input end, and the light-emitting source can emit light; the light receiver is arranged opposite to the light emitting source and can receive the light rays and generate photocurrent; an insulating layer between the light emitting source and the light receiver to isolate the light emitting source and the light receiver, the insulating layer comprising an epoxy resin; the coating layer is arranged between the light-emitting source and the insulating layer or between the light receiver and the insulating layer, at least one part of light emitted by the light-emitting source passes through the coating layer and irradiates the light receiver, the coating layer comprises graphene oxide, the graphene oxide can be heated and converted into graphene when the photoelectric coupler is welded on the circuit board, and the graphene can absorb the light emitted by the light-emitting source to reduce the increase of the photoelectric conversion coefficient after welding.
According to the photoelectric coupler provided by the embodiment of the invention, the coating layer is arranged between the light emitting source and the insulating layer or between the light receiver and the insulating layer, so that at least part of light emitted by the light emitting source passes through the coating layer and irradiates the light receiver, the coating layer contains graphene oxide, the graphene oxide is heated and converted into graphene when being welded, and the graphene can absorb the light emitted by the light emitting source, so that the low photoelectric conversion rate offset of the photoelectric coupler can be realized.
According to one embodiment of the present invention, the coating layer is disposed on an outer surface of the light emitting source to coat the light emitting source.
According to one embodiment of the invention, the coating layer is formed as a material layer formed by mixing graphene oxide and silica gel.
According to one embodiment of the invention, the cladding layer comprises: a first coating layer formed as a silicone layer, the first coating layer being capable of coating at least a portion of the light emitting source; the second coating layer is formed into a material layer formed by mixing graphene oxide and silica gel, the second coating layer is arranged on the outer side of the first coating layer, and the second coating layer can at least cover the rest part of the light-emitting source.
According to one embodiment of the invention, the light emitting source is an infrared light emitting diode.
The manufacturing method of the photoelectric coupler according to the embodiment of the second aspect of the invention comprises the following steps: s1, preparing a coating layer precursor mixture containing graphene oxide for later use; s2, placing the coating layer precursor mixture between the light emitting source and the insulating layer or between the light receiver and the insulating layer; s3, solidifying the coating layer precursor mixture, filling a reserved space between the light emitting source and the light receiver by using epoxy resin in an injection molding way, and bending the pins to obtain the photoelectric coupler.
According to one embodiment of the invention, the mass concentration of the graphene oxide in the coating precursor mixture is 0.0001% -20%.
According to one embodiment of the present invention, step S1 further comprises: and (3) carrying out centrifugal defoaming on the obtained coating precursor mixture.
According to one embodiment of the invention, in step S3, the curing temperature is 80-150 ℃.
The use method of the photoelectric coupler according to the embodiment of the third aspect of the invention comprises the following steps: and welding the coating layer in the photoelectric coupler in a reflow soldering or wave soldering mode, wherein the graphene oxide is converted into graphene at the temperature of 180-260 ℃.
Additional aspects and advantages of the invention will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention.
Drawings
The foregoing and/or additional aspects and advantages of the invention will become apparent and may be better understood from the following description of embodiments taken in conjunction with the accompanying drawings in which:
FIG. 1 is a schematic view of a light emitting source coated with a coating layer of a photo-coupler according to an embodiment of the invention;
FIG. 2 is a schematic illustration of a welded wrap of a photo-coupler according to an embodiment of the invention;
FIG. 3 is a schematic view of a light source coated first coating layer of a photo-coupler according to yet another embodiment of the invention;
Fig. 4 is a schematic view of a structure in which a light emitting source of a photocoupler according to still another embodiment of the present invention is coated with a second encapsulation layer;
FIG. 5 is a schematic illustration of a wrap-through of a photo-coupler according to yet another embodiment of the invention after welding;
FIG. 6 is a schematic diagram of CTR change rate of a prior art photocoupler after 3 reflow solders;
fig. 7 is a schematic diagram of the CTR change rate of the photocoupler after 3 reflow processes according to an embodiment of the present invention.
Reference numerals:
A photocoupler 100;
A light-emitting source 10; a light receiver 20;
a coating layer 30; a first clad layer 31; a second cladding layer 32.
Detailed Description
Embodiments of the present invention are described in detail below, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to like or similar elements or elements having like or similar functions throughout. The embodiments described below by referring to the drawings are illustrative only and are not to be construed as limiting the invention.
In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings are merely for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the device or element being referred to must have a specific orientation, be configured and operated in a specific orientation, and therefore should not be construed as limiting the present invention. Furthermore, features defining "first", "second" may include one or more such features, either explicitly or implicitly. In the description of the present invention, unless otherwise indicated, the meaning of "a plurality" is two or more.
In the description of the present invention, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present invention will be understood in specific cases by those of ordinary skill in the art.
The photocoupler 100 according to an embodiment of the present invention is described in detail below with reference to the accompanying drawings.
As shown in fig. 1 to 5, a photo coupler 100 according to an embodiment of the present invention includes: a light emitting source 10, a light receiver 20, an insulating layer and a cladding layer 30.
Specifically, the pin of the light emitting source 10 is connected with the signal input end to receive the signal transmitted by the signal input end, the light emitting source 10 can emit light, the light receiver 20 is opposite to the light emitting source 10, the light receiver 20 can receive the light and generate photocurrent, the insulating layer is arranged between the light emitting source 10 and the light receiver 20 to isolate the light emitting source 10 and the light receiver 20, the insulating layer comprises epoxy resin, the coating layer 30 is arranged between the light emitting source 10 and the insulating layer or between the light receiver 20 and the insulating layer, at least a part of the light emitted by the light emitting source 10 irradiates the light receiver 20 after passing through the coating layer 30, the coating layer 30 comprises graphene oxide, the graphene oxide can be heated and converted into graphene when the photoelectric coupler 100 is welded on the circuit board, and the graphene can absorb the light emitted by the light emitting source 10 to reduce the increase of the photoelectric conversion coefficient after welding.
In other words, the photo-coupler 100 according to the embodiment of the invention mainly comprises the light source 10, the light receiver 20, the insulating layer and the coating layer 30, wherein the light source 10 and the light receiver 20 are assembled in the same airtight housing, and can be isolated from each other by the insulating layer, and the insulating layer is filled with epoxy resin. The pin of the light emitting source 10 is an input end, the pin of the light emitting source 10 is connected with a signal input end, the signal transmitted by the signal input end can be received, and the light emitting source 10 can emit light. The pins of the light receiver 20 are output ends, and after the light source 10 emits light, the light receiver 20 can receive the light and generate photocurrent. A coating layer 30 is provided between the light emitting source 10 and the insulating layer or between the light receiver 20 and the insulating layer, and at least a part of the light emitted from the light emitting source 10 can pass through the coating layer 30, then be irradiated to the light receiver 20, and be received by the light receiver 20. The coating layer 30 contains graphene oxide, and when the photoelectric coupler 100 is welded, the graphene oxide can be heated and converted into graphene, and the graphene can absorb light emitted by the light emitting source 10, so that an increase of a photoelectric conversion coefficient caused after welding can be reduced, and a photocurrent conversion Coefficient (CTR) can be kept unchanged.
Therefore, the photocoupler 100 according to the embodiment of the present invention adopts a device that combines the light emitting source 10, the light receiver 20, the insulating layer and the coating layer 30, and the coating layer 30 is disposed between the light emitting source 10 and the insulating layer or between the light receiver 20 and the insulating layer, where the coating layer 30 contains graphene oxide, and the graphene oxide is converted into graphene after being heated by welding, so that the CTR can be kept unchanged, and the initial intensity of infrared emission is not reduced due to the high transmittance of the graphene oxide.
According to an embodiment of the present invention, the coating layer 30 is disposed on the outer surface of the light emitting source 10 to cover the light emitting source 10, so that the probability of the light emitted from the light emitting source 10 passing through the coating layer 30 can be improved.
Further, the coating layer 30 is formed as a material layer formed by mixing graphene oxide and silica gel. That is, the surface of the light emitting source 10 may be dispensed by one-time dispensing, so that the light emitting source 10 may be wrapped. In the process of mixing graphene oxide into silica gel, the silica gel can be kept in normal use without increasing the production process steps.
In some embodiments of the present invention, the cladding layer 30 includes: the first coating layer 31 and the second coating layer 32, the first coating layer 31 is formed as a silica gel layer, the first coating layer 31 can coat at least a part of the light-emitting source 10, the second coating layer 32 is formed as a material layer formed by mixing graphene oxide and silica gel, the second coating layer 32 is provided outside the first coating layer 31, and the second coating layer 32 can coat at least the rest of the light-emitting source 10. That is, the coating effect on the surface of the light emitting source 10 is improved by the secondary dispensing method. As shown in fig. 7 and 6, 19 samples of the photocoupler 100 and 20 samples of the photocoupler without the coating layer, which were manufactured according to the embodiment of the present invention, were subjected to 3 times of reflow soldering, respectively, to measure the rate of change of CTR. From the results, the variation of the CTR of the photocoupler according to the embodiment of the present invention was significantly reduced compared to the variation of the CTR of the photocoupler without the cladding layer (fig. 6).
According to one embodiment of the present invention, the light emitting source 10 is an infrared light emitting diode.
The manufacturing method of the photoelectric coupler comprises the following steps: s1, preparing a coating layer precursor mixture containing graphene oxide for later use; s2, placing the coating layer precursor mixture between the light emitting source and the insulating layer or between the light receiver and the insulating layer; s3, solidifying the coating layer precursor mixture, filling a reserved space between the light emitting source and the light receiver by using epoxy resin in an injection molding way, and bending the pins to obtain the photoelectric coupler.
Specifically, in manufacturing the photocoupler, first, a coating layer precursor mixture including graphene oxide is prepared, and then the coating layer precursor mixture is interposed between the light emitting source 10 and the insulating layer or between the light receiver 20 and the insulating layer, alternatively, the coating layer precursor mixture may be coated on the outer surface of the light emitting source 10 or the light receiver 20. Subsequently, the optocoupler 100 is obtained after the steps of curing, injection molding, punching cutting, bending angle manufacturing and the like, baking curing can be adopted in the curing process of the coating precursor mixture, and gradient heating can be selected for heating in the baking curing process, and optionally, the optocoupler is heated for 1h at 80 ℃ and then heated to 150 ℃ for 2h.
When the coating layer precursor mixture is formed by mixing graphene oxide and silica gel, a stirring mode can be adopted in the mixing process, so that the mixing uniformity can be improved.
Further, the mass concentration of the graphene oxide in the coating precursor mixture is 0.0001-20%.
According to one embodiment of the invention, step S1 further comprises: the obtained coating precursor mixture was subjected to centrifugal defoaming, so that bubbles in the silica gel were removed.
In some embodiments of the invention, in step S3, the curing temperature is 80 ℃ to 150 ℃.
The use method of the photoelectric coupler comprises the following steps: the coating layer 30 in the photoelectric coupler 100 is welded by adopting a reflow soldering or wave soldering mode, and graphene oxide is converted into graphene at the temperature of 180-260 ℃.
In summary, the photoelectric coupler according to the embodiment of the invention has the advantages of simple structure, convenient manufacture, convenient operation and the like. When the photoelectric coupler is used, a user changes the graphene oxide into graphene at high temperature through a welding process such as reflow soldering and the like, part of infrared light can be absorbed, and the effect of zero offset of the photoelectric conversion rate can be achieved by adjusting the concentration of the graphene oxide. That is, the invention aims to solve the technical problems in the prior art by adding graphene oxide, the graphene oxide can be converted into graphene after being heated, the graphene can absorb light emitted by a light-emitting source, and the increase value of the photoelectric conversion coefficient after welding is reduced.
In the description of the present specification, reference to the terms "one embodiment," "some embodiments," "illustrative embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiments or examples. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
While embodiments of the present invention have been shown and described, it will be understood by those of ordinary skill in the art that: many changes, modifications, substitutions and variations may be made to the embodiments without departing from the spirit and principles of the invention, the scope of which is defined by the claims and their equivalents.
Claims (7)
1. An optoelectronic coupler, comprising:
the pin of the light-emitting source is connected with the signal input end to receive the signal transmitted by the signal input end, and the light-emitting source can emit light;
The light receiver is arranged opposite to the light emitting source and can receive the light rays and generate photocurrent;
An insulating layer between the light emitting source and the light receiver to isolate the light emitting source and the light receiver, the insulating layer comprising an epoxy resin;
the coating layer is arranged between the light emitting source and the insulating layer, at least part of light emitted by the light emitting source passes through the coating layer and irradiates the light receiver, the coating layer comprises graphene oxide, the graphene oxide can be heated and converted into graphene when the photoelectric coupler is welded to the circuit board, and the graphene can absorb the light emitted by the light emitting source to reduce the increase of the photoelectric conversion coefficient after welding;
The coating layer is arranged on the outer surface of the light-emitting source so as to coat the light-emitting source;
the coating layer is formed into a material layer formed by mixing graphene oxide and silica gel;
or the coating layer comprises:
a first coating layer formed as a silicone layer, the first coating layer being capable of coating at least a portion of the light emitting source;
The second coating layer is formed into a material layer formed by mixing graphene oxide and silica gel, the second coating layer is arranged on the outer side of the first coating layer, and the second coating layer can at least cover the rest part of the light-emitting source.
2. The optocoupler of claim 1 wherein the light emitting source is an infrared light emitting diode.
3. A method of manufacturing a photocoupler according to any one of claims 1 to 2, comprising the steps of:
S1, preparing a coating layer precursor mixture containing graphene oxide for later use;
S2, coating the coating layer precursor mixture on the outer surface of the luminous source;
s3, solidifying the coating layer precursor mixture, filling a reserved space between the light emitting source and the light receiver by using epoxy resin in an injection molding way, and bending the pins to obtain the photoelectric coupler.
4. The method of manufacturing a photocoupler according to claim 3, wherein a mass concentration of said graphene oxide in said coating precursor mixture is 0.0001% to 20%.
5. The method of manufacturing a photocoupler according to claim 3, wherein step S1 further comprises:
and (3) carrying out centrifugal defoaming on the obtained coating precursor mixture.
6. The method of manufacturing a photocoupler according to claim 3, wherein in step S3, the curing temperature is 80 ℃ to 150 ℃.
7. A method of using a photocoupler according to any one of claims 1 to 2, comprising the steps of:
and welding the photoelectric coupler by adopting a reflow soldering or wave soldering mode, wherein the graphene oxide is converted into graphene at the temperature of 180-260 ℃.
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20000032592A (en) * | 1998-11-16 | 2000-06-15 | 이택렬 | Photocoupler and method for manufacturing the photocoupler |
| CN102169963A (en) * | 2010-12-22 | 2011-08-31 | 涂洪明 | Carbon thin layer electrode |
| EP2792720A2 (en) * | 2013-04-15 | 2014-10-22 | Instytut Technologii Materialów Elektronicznych | Method of a thermal resistance reduction in electronic power devices, especially in laser diodes |
| WO2015150198A1 (en) * | 2014-04-04 | 2015-10-08 | Koninklijke Philips N.V. | A method of producing a graphene layer |
| CN106947906A (en) * | 2017-03-23 | 2017-07-14 | 合肥仁德电子科技有限公司 | A kind of electronic package material and preparation method thereof |
| CN210429807U (en) * | 2019-08-07 | 2020-04-28 | 江苏欧密格光电科技股份有限公司 | Photoelectric coupler |
-
2019
- 2019-08-07 CN CN201910725044.3A patent/CN110364519B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20000032592A (en) * | 1998-11-16 | 2000-06-15 | 이택렬 | Photocoupler and method for manufacturing the photocoupler |
| CN102169963A (en) * | 2010-12-22 | 2011-08-31 | 涂洪明 | Carbon thin layer electrode |
| EP2792720A2 (en) * | 2013-04-15 | 2014-10-22 | Instytut Technologii Materialów Elektronicznych | Method of a thermal resistance reduction in electronic power devices, especially in laser diodes |
| WO2015150198A1 (en) * | 2014-04-04 | 2015-10-08 | Koninklijke Philips N.V. | A method of producing a graphene layer |
| CN106947906A (en) * | 2017-03-23 | 2017-07-14 | 合肥仁德电子科技有限公司 | A kind of electronic package material and preparation method thereof |
| CN210429807U (en) * | 2019-08-07 | 2020-04-28 | 江苏欧密格光电科技股份有限公司 | Photoelectric coupler |
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