CN110364519A - Photoelectrical coupler, production method and its application method - Google Patents
Photoelectrical coupler, production method and its application method Download PDFInfo
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- CN110364519A CN110364519A CN201910725044.3A CN201910725044A CN110364519A CN 110364519 A CN110364519 A CN 110364519A CN 201910725044 A CN201910725044 A CN 201910725044A CN 110364519 A CN110364519 A CN 110364519A
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- 238000000034 method Methods 0.000 title claims abstract description 14
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 53
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 52
- 238000006243 chemical reaction Methods 0.000 claims abstract description 15
- 239000003822 epoxy resin Substances 0.000 claims abstract description 14
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 14
- 238000005476 soldering Methods 0.000 claims abstract description 14
- 238000003466 welding Methods 0.000 claims abstract description 12
- 230000005540 biological transmission Effects 0.000 claims abstract description 6
- 239000000203 mixture Substances 0.000 claims description 21
- 239000002243 precursor Substances 0.000 claims description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 13
- 239000000741 silica gel Substances 0.000 claims description 13
- 229910002027 silica gel Inorganic materials 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 8
- 238000011049 filling Methods 0.000 claims description 4
- 238000002360 preparation method Methods 0.000 claims description 4
- 150000001336 alkenes Chemical class 0.000 claims description 3
- 238000005452 bending Methods 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 238000007872 degassing Methods 0.000 claims description 2
- 229910002804 graphite Inorganic materials 0.000 claims description 2
- 239000010439 graphite Substances 0.000 claims description 2
- 238000002156 mixing Methods 0.000 claims 1
- 230000010512 thermal transition Effects 0.000 claims 1
- 230000008859 change Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 230000008901 benefit Effects 0.000 description 3
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000005622 photoelectricity Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
- 230000008023 solidification Effects 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000010426 asphalt Substances 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
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- 238000010438 heat treatment Methods 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
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- 238000003756 stirring Methods 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Abstract
The invention discloses a kind of photoelectrical coupler, production method and its application method, photoelectrical coupler includes: light emitting source, and the pin of light emitting source is connected to receive the signal of signal input part transmission with signal input part, and light emitting source can emit beam；Light-receiving device is oppositely arranged with light emitting source, and light-receiving device can receive light and generate photoelectric current；Insulating layer, light emitting source and light-receiving device is isolated between light emitting source and light-receiving device, insulating layer includes epoxy resin；Clad, between light emitting source and insulating layer or between light-receiving device and insulating layer, the at least part for the light that light emitting source issues is irradiated to light-receiving device after clad, clad includes graphene oxide, graphene oxide heated in welding can be converted to graphene, and graphene can absorb the light of light source sending to reduce photoelectric conversion factors in the increase after Reflow Soldering.The photoelectrical coupler can be realized low photoelectric conversion rate offset.
Description
Technical field
The present invention relates to optical isolation coupled device technologies fields, more particularly, to a kind of photoelectrical coupler, photoelectric coupling
The production method and application method of device.
Background technique
Photoelectrical coupler is a kind of electrical-optical-electrical switching device using light as media transmission electric signal, usually by light emitting source and
Light-receiving device two parts composition.Light emitting source and light-receiving device are assembled in same closed shell, are isolated to each other with insulator, absolutely
Edge body is usually the epoxy resin filled, and epoxy resin is divided into two layers inside and outside, and internal layer is white epoxy resin, and light emitting source is allowed to issue
Light be perforated through arrival light-receiving device, outer layer is black epoxy, be used for shielding environment light, promoted the anti-interference energy of photoelectrical coupler
Power.The pin of light emitting source is input terminal, and the pin of light-receiving device is output end, and common light emitting source is light emitting diode, light-receiving device
For photodiode, phototriode etc..Existing photoelectrical coupler photoelectric current conversion coefficient after 1~3 time Reflow Soldering
(CTR) it can obviously increase, increasing degree is generally larger than 25%.Photoelectric current conversion coefficient (CTR) increases reason and is thought that
Be chip or wrap chip silica gel and internal layer epoxy resin it is peeling-off after Reflow Soldering, make the more light of light emitting source saturating
It crosses white epoxy resin and reaches light-receiving device.The test of more convincingness proves recently, and photoelectric current conversion coefficient (CTR) increases perhaps
Be internal layer epoxy resin after the Reflow Soldering less than 3 times its light penetration occur increase cause.But it is no matter any
The increased mode of electric current conversion coefficient can all cause the photoelectric conversion factors of photoelectrical coupler factory mark and client is practical makes
There is deviation with value, influences client's use.
Summary of the invention
The present invention is directed at least solve one of the technical problems existing in the prior art.
For this purpose, the present invention proposes a kind of photoelectrical coupler, photoelectrical coupler assembly is simple, is easy to use.
The production method that the present invention also proposes a kind of photoelectrical coupler, the production method step is simple, convenient for operation.
The present invention also proposes a kind of application method of photoelectrical coupler, and the application method is convenient to carry out, can effectively realize
The low photoelectric conversion rate of photoelectrical coupler deviates.
The photoelectrical coupler of embodiment according to a first aspect of the present invention, comprising: light emitting source, the pin and letter of the light emitting source
Number input terminal is connected to receive the signal of the signal input part transmission, and the light emitting source can emit beam；Light-receiving device, it is described
Light-receiving device is oppositely arranged with the light emitting source, and the light-receiving device can receive the light and generate photoelectric current；Insulating layer, it is described
The light emitting source and the light-receiving device, the insulating layer packet is isolated in insulating layer between the light emitting source and the light-receiving device
Containing epoxy resin；Clad, the clad is set between the light emitting source and the insulating layer or the light-receiving device and institute
It states between insulating layer, at least part for the light that the light emitting source issues is irradiated to the light after the clad
Device, the clad include graphene oxide, and the graphene oxide can be soldered on wiring board in the photoelectrical coupler
Shi Shoure is converted to graphene, and the graphene can absorb the light that the light emitting source issues and be existed with reducing photoelectric conversion factors
Increase after welding.
Photoelectrical coupler according to an embodiment of the present invention, by between the light emitting source and the insulating layer or described
Clad is equipped between light-receiving device and the insulating layer, at least part for the light for issuing light emitting source is by the clad
After be irradiated to the light-receiving device, clad includes graphene oxide, and graphene oxide is heated when by welding to be converted into graphite
Alkene, graphene can absorb the light of light emitting source sending, so as to realize the low photoelectric conversion rate offset of photoelectrical coupler.
According to an embodiment of the present invention, the clad is set to the outer surface of the light emitting source to coat described shine
Source.
According to an embodiment of the present invention, the clad layer-forming is the material mixed by graphene oxide and silica gel
Layer.
According to an embodiment of the present invention, the clad includes: the first clad, and first clad layer-forming is silicon
Glue-line, first clad can coat at least part of the light emitting source；Second clad, the second clad shape
As the material layer mixed by graphene oxide and silica gel, second clad is set to the outer of first clad
Side, second clad can at least coat the rest part of the light emitting source.
According to an embodiment of the present invention, the light emitting source is infrared light-emitting diode.
The production method of the photoelectrical coupler of embodiment according to a second aspect of the present invention, comprising the following steps: S1, preparation packet
Clad precursor mixture containing graphene oxide is spare；S2, the clad precursor mixture is placed in described shine
Between source and the insulating layer or between the light-receiving device and the insulating layer；S3, by the clad precursor mixture
Solidified, using epoxy resin by the reserved space mould filling between light emitting source and light-receiving device, the pin is rolled over
The photoelectrical coupler is obtained after curved.
According to an embodiment of the present invention, the mass concentration of graphene oxide described in the clad precursor mixture
It is 0.0001%~20%.
According to an embodiment of the present invention, step S1 further include: carry out the obtained clad precursor mixture
Evacuation and centrifugal degassing.
According to an embodiment of the present invention, in step s3, cured temperature is 80 DEG C -150 DEG C.
The application method of the photoelectrical coupler of embodiment according to a third aspect of the present invention, comprising the following steps: by the light
The clad in electric coupler is welded using Reflow Soldering or wave-soldering mode, the graphene oxide 180 DEG C~
Graphene is converted under 260 DEG C of temperature ranges.
Additional aspect and advantage of the invention will be set forth in part in the description, and will partially become from the following description
Obviously, or practice through the invention is recognized.
Detailed description of the invention
Above-mentioned and/or additional aspect of the invention and advantage will become from the description of the embodiment in conjunction with the following figures
Obviously and it is readily appreciated that, in which:
Fig. 1 is that the light emitting source of photoelectrical coupler according to an embodiment of the invention is coated with the structural schematic diagram of wrapping layer；
Fig. 2 is schematic diagram of the wrapping layer of photoelectrical coupler according to an embodiment of the invention after welding；
Fig. 3 is that the light emitting source of the photoelectrical coupler of another embodiment according to the present invention coats the structural representation of the first wrapping layer
Figure；
Fig. 4 is that the light emitting source of the photoelectrical coupler of another embodiment according to the present invention coats the structural representation of the second wrapping layer
Figure；
Fig. 5 is schematic diagram of the wrapping layer of the photoelectrical coupler of another embodiment according to the present invention after welding；
Fig. 6 is CTR change rate schematic diagram of the photoelectrical coupler of the prior art after 3 Reflow Solderings；
Fig. 7 is CTR change rate schematic diagram of the photoelectrical coupler according to an embodiment of the present invention after 3 Reflow Solderings.
Appended drawing reference:
Photoelectrical coupler 100；
Light emitting source 10；Light-receiving device 20；
Clad 30；First clad 31；Second clad 32.
Specific embodiment
The embodiment of the present invention is described below in detail, examples of the embodiments are shown in the accompanying drawings, wherein from beginning to end
Same or similar label indicates same or similar element or element with the same or similar functions.Below with reference to attached
The embodiment of figure description is exemplary, and for explaining only the invention, and is not considered as limiting the invention.
In the description of the present invention, it is to be understood that, term " center ", " longitudinal direction ", " transverse direction ", " length ", " width ",
" thickness ", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom" "inner", "outside", " up time
The orientation or positional relationship of the instructions such as needle ", " counterclockwise ", " axial direction ", " radial direction ", " circumferential direction " be orientation based on the figure or
Positional relationship is merely for convenience of description of the present invention and simplification of the description, rather than the device or element of indication or suggestion meaning must
There must be specific orientation, be constructed and operated in a specific orientation, therefore be not considered as limiting the invention.In addition, limit
There is the feature of " first ", " second " to can explicitly or implicitly include one or more of the features surely.Of the invention
In description, unless otherwise indicated, the meaning of " plurality " is two or more.
In the description of the present invention, it should be noted that unless otherwise clearly defined and limited, term " installation ", " phase
Even ", " connection " shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or be integrally connected；It can
To be mechanical connection, it is also possible to be electrically connected；It can be directly connected, can also can be indirectly connected through an intermediary
Connection inside two elements.For the ordinary skill in the art, above-mentioned term can be understood at this with concrete condition
Concrete meaning in invention.
Below with reference to the accompanying drawings photoelectrical coupler 100 according to an embodiment of the present invention is specifically described.
As shown in Figures 1 to 5, photoelectrical coupler 100 according to an embodiment of the present invention, comprising: light emitting source 10, light-receiving device
20, insulating layer and clad 30.
Specifically, the pin of light emitting source 10 is connected to receive the signal of signal input part transmission, hair with signal input part
Light source 10 can emit beam, and light-receiving device 20 is oppositely arranged with light emitting source 10, and light-receiving device 20 can receive light and generate photoelectricity
Light emitting source 10 and light-receiving device 20 is isolated in stream, insulating layer between light emitting source 10 and light-receiving device 20, and insulating layer includes asphalt mixtures modified by epoxy resin
Rouge, clad 30 are set between light emitting source 10 and insulating layer or between light-receiving device 20 and insulating layer, the light that light emitting source 10 issues
At least part of line is irradiated to light-receiving device 20 after clad 30, and clad 30 includes graphene oxide, graphene oxide
It can be heated when photoelectrical coupler 100 is soldered on wiring board and be converted to graphene, graphene can absorb the hair of light emitting source 10
Light out is to reduce photoelectric conversion factors in the increase after welding.
In other words, photoelectrical coupler 100 according to an embodiment of the present invention is mainly by light emitting source 10, light-receiving device 20, insulating layer
Formed with clad 30, light emitting source 10 and light-receiving device 20 be assembled in same closed shell, each other can with insulating layer into
Row isolation, insulating layer are the epoxy resin of filling.The pin of light emitting source 10 is input terminal, and the pin and signal of light emitting source 10 input
End is connected, and can receive the signal of signal input part transmission, and light emitting source 10 can emit beam.The pin of light-receiving device 20 is output
End, after light emitting source 10 emits beam, light-receiving device 20 can receive light and generate photoelectric current.Light emitting source 10 and insulating layer it
Between or between light-receiving device 20 and insulating layer be equipped with clad 30, at least part for the light that light emitting source 10 issues can be through
It is irradiated to light-receiving device 20 after crossing clad 30, and is received by light-receiving device 20.Clad 30 includes graphene oxide, photoelectricity coupling
When by welding, graphene oxide can be heated and be converted to graphene clutch 100, and graphene can absorb the hair of light emitting source 10
Light out can reduce the increase in the caused photoelectric conversion factors after welding, so as to keep photoelectric current to convert
Coefficient (CTR) is constant.
Photoelectrical coupler 100 according to an embodiment of the present invention is using light emitting source 10, light-receiving device 20, insulating layer and packet as a result,
The device that coating 30 combines is equipped with clad between light emitting source 10 and insulating layer or between light-receiving device 20 and insulating layer
30, clad 30 includes graphene oxide, and graphene oxide is being converted into graphene after welding and being heated, is being able to maintain CTR
It is constant, and since graphene oxide itself has very high transmitance, infrared emission initial strength will not be reduced.
According to one embodiment of present invention, clad 30 is set to the outer surface of light emitting source 10 to coat light emitting source 10, energy
Enough improve the probability that the light that light emitting source 10 issues passes through clad 30.
Further, clad 30 is formed as the material layer mixed by graphene oxide and silica gel.That is, can
The surface that light emitting source 10 is clicked and entered in a manner of through a dispensing, light emitting source 10 can be wrapped.It is mixed by graphene oxide
In silica gel, silica gel can keep normal use, not will increase procedure for producing step.
In certain specific embodiments of the invention, clad 30 includes: the first clad 31 and the second clad 32,
First clad 31 is formed as layer of silica gel, and the first clad 31 can coat at least part of light emitting source 10, the second clad
32 are formed as the material layer mixed by graphene oxide and silica gel, and the second clad 32 is set to the outer of the first clad 31
Side, the second clad 32 can at least coat the rest part of light emitting source 10.That is, being improved pair by secondary dispensing mode
Covered effect in the surface of light emitting source 10.It, will prepared 19 light according to embodiments of the present invention as shown in Fig. 7 and Fig. 6
100 sample of electric coupler and do not pass through 3 times Reflow Solderings respectively using 20 samples of photoelectrical coupler of clad, surveys respectively
Obtain the change rate of CTR.In terms of result, compared to the CTR change rate (Fig. 6) for the photoelectrical coupler for not using clad, according to this
The variation of the CTR of the photoelectrical coupler of inventive embodiments is substantially reduced.
According to one embodiment of present invention, light emitting source 10 is infrared light-emitting diode.
The production method of photoelectrical coupler according to an embodiment of the present invention, comprising the following steps: S1, preparation include oxidation stone
The clad precursor mixture of black alkene is spare；S2, the clad precursor mixture is placed in the light emitting source and described
Between insulating layer or between the light-receiving device and the insulating layer；S3, the clad precursor mixture is solidified,
Using epoxy resin by the reserved space mould filling between light emitting source and light-receiving device, institute is obtained after carrying out bending to the pin
State photoelectrical coupler.
Specifically, when making photoelectrical coupler, firstly, preparation is mixed comprising the clad presoma of graphene oxide
Object, then by clad precursor mixture be placed between light emitting source 10 and insulating layer or be placed in light-receiving device 20 and insulating layer it
Between, it is alternatively possible to which clad precursor mixture to be coated on to the outer surface of light emitting source 10 or light-receiving device 20.Then, it passes through
Cross solidification, injection molding, die cut, bending angle production and etc. after obtain photoelectrical coupler 100, to clad precursor mixture
Solidification process baking-curing can be used, the heating of baking-curing can choose gradient increased temperature, optionally, first at a temperature of 80 DEG C
1h is heated, then is warming up to 150 DEG C, heats 2h.
When clad precursor mixture is mixed by graphene oxide and silica gel, it can use and stir in mixed process
Mode is mixed, can be improved mixture homogeneity.
Further, the mass concentration of graphene oxide is 0.0001%~20% in clad precursor mixture.
According to one embodiment of present invention, step S1 further include: by obtained clad precursor mixture carry out from
Heart deaeration can remove the bubble in silica gel.
In certain specific embodiments of the invention, in step s3, cured temperature is 80 DEG C -150 DEG C.
The application method of photoelectrical coupler according to an embodiment of the present invention, comprising the following steps: will be in photoelectrical coupler 100
Clad 30 welded using Reflow Soldering or wave-soldering mode, graphene oxide turns under 180 DEG C~260 DEG C temperature ranges
Turn to graphene.
To sum up, photoelectrical coupler according to an embodiment of the present invention, has structure simple, and it is easy to make, it is easy to operate
The advantages that.When in use, user becomes photoelectrical coupler by welding procedures, graphene oxides such as Reflow Solderings at high temperature
Part infrared light can be absorbed in graphene, by adjusting graphene oxide concentration, can be realized the effect of photoelectric conversion rate zero offset
Fruit.That is, aoxidizing stone the present invention is directed to by the way that graphene oxide is added to solve the technical problems existing in the prior art
Black alkene can be converted into graphene after heated, and graphene can absorb the light of light emitting source sending, reduce photoelectric conversion factors and passing through
Value added after crossing welding.
In the description of this specification, reference term " one embodiment ", " some embodiments ", " illustrative examples ",
The description of " example ", " specific example " or " some examples " etc. means specific features described in conjunction with this embodiment or example, knot
Structure, material or feature are included at least one embodiment or example of the invention.In the present specification, to above-mentioned term
Schematic representation may not refer to the same embodiment or example.Moreover, specific features, structure, material or the spy of description
Point can be combined in any suitable manner in any one or more of the embodiments or examples.
Although an embodiment of the present invention has been shown and described, it will be understood by those skilled in the art that: not
A variety of change, modification, replacement and modification can be carried out to these embodiments in the case where being detached from the principle of the present invention and objective, this
The range of invention is defined by the claims and their equivalents.
Claims (10)
1. a kind of photoelectrical coupler characterized by comprising
Light emitting source, the pin of the light emitting source are connected to receive the signal of the signal input part transmission, institute with signal input part
Stating light emitting source can emit beam；
Light-receiving device, the light-receiving device are oppositely arranged with the light emitting source, and the light-receiving device can receive the light and generate light
Electric current；
The light emitting source and the light is isolated in insulating layer, the insulating layer between the light emitting source and the light-receiving device
Device, the insulating layer include epoxy resin；
Clad, the clad is set between the light emitting source and the insulating layer or the light-receiving device and the insulating layer
Between, at least part for the light that the light emitting source issues is irradiated to the light-receiving device, the packet after the clad
Coating includes graphene oxide, and the graphene oxide can be when the photoelectrical coupler be soldered on wiring board by thermal transition
At graphene, the graphene can absorb the light that the light emitting source issues to reduce photoelectric conversion factors after welding
Increase.
2. photoelectrical coupler according to claim 1, which is characterized in that the clad is set to the appearance of the light emitting source
Face is to coat the light emitting source.
3. photoelectrical coupler according to claim 2, which is characterized in that the clad layer-forming be by graphene oxide and
The material layer that silica gel mixes.
4. photoelectrical coupler according to claim 2, which is characterized in that the clad includes:
First clad, first clad layer-forming are layer of silica gel, and first clad can coat the light emitting source
At least partially；
Second clad, second clad layer-forming are the material layer mixed by graphene oxide and silica gel, described
Two clads are set to the outside of first clad, and second clad can at least coat its remaining part of the light emitting source
Point.
5. photoelectrical coupler according to claim 1, which is characterized in that the light emitting source is infrared light-emitting diode.
6. a kind of production method of photoelectrical coupler according to any one of claims 1-5, which is characterized in that including with
Lower step:
The clad precursor mixture of S1, preparation comprising graphene oxide is spare；
S2, by the clad precursor mixture be placed between the light emitting source and the insulating layer or the light-receiving device and
Between the insulating layer；
S3, the clad precursor mixture is solidified, it will be pre- between light emitting source and light-receiving device using epoxy resin
Spacing mould filling obtains the photoelectrical coupler after carrying out bending to the pin.
7. the production method of photoelectrical coupler according to claim 6, which is characterized in that the clad presoma mixing
The mass concentration of graphene oxide described in object is 0.0001%~20%.
8. the production method of photoelectrical coupler according to claim 6, which is characterized in that step S1 further include:
The obtained clad precursor mixture is subjected to evacuation and centrifugal degassing.
9. the production method of photoelectrical coupler according to claim 6, which is characterized in that in step s3, cured temperature
Degree is 80 DEG C -150 DEG C.
10. it is a kind of according to claim 1 in -5 any photoelectrical coupler application method, which is characterized in that including with
Lower step:
The clad in the photoelectrical coupler is welded using Reflow Soldering or wave-soldering mode, the graphite oxide
Alkene is converted into graphene under 180 DEG C~260 DEG C temperature ranges.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910725044.3A CN110364519B (en) | 2019-08-07 | 2019-08-07 | Photoelectric coupler, manufacturing method and using method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910725044.3A CN110364519B (en) | 2019-08-07 | 2019-08-07 | Photoelectric coupler, manufacturing method and using method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110364519A true CN110364519A (en) | 2019-10-22 |
| CN110364519B CN110364519B (en) | 2024-04-23 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201910725044.3A Active CN110364519B (en) | 2019-08-07 | 2019-08-07 | Photoelectric coupler, manufacturing method and using method thereof |
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| KR20000032592A (en) * | 1998-11-16 | 2000-06-15 | 이택렬 | Photocoupler and method for manufacturing the photocoupler |
| CN102169963A (en) * | 2010-12-22 | 2011-08-31 | 涂洪明 | Carbon thin layer electrode |
| EP2792720A2 (en) * | 2013-04-15 | 2014-10-22 | Instytut Technologii Materialów Elektronicznych | Method of a thermal resistance reduction in electronic power devices, especially in laser diodes |
| WO2015150198A1 (en) * | 2014-04-04 | 2015-10-08 | Koninklijke Philips N.V. | A method of producing a graphene layer |
| CN106947906A (en) * | 2017-03-23 | 2017-07-14 | 合肥仁德电子科技有限公司 | A kind of electronic package material and preparation method thereof |
| CN210429807U (en) * | 2019-08-07 | 2020-04-28 | 江苏欧密格光电科技股份有限公司 | Photoelectric coupler |
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Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20000032592A (en) * | 1998-11-16 | 2000-06-15 | 이택렬 | Photocoupler and method for manufacturing the photocoupler |
| CN102169963A (en) * | 2010-12-22 | 2011-08-31 | 涂洪明 | Carbon thin layer electrode |
| EP2792720A2 (en) * | 2013-04-15 | 2014-10-22 | Instytut Technologii Materialów Elektronicznych | Method of a thermal resistance reduction in electronic power devices, especially in laser diodes |
| WO2015150198A1 (en) * | 2014-04-04 | 2015-10-08 | Koninklijke Philips N.V. | A method of producing a graphene layer |
| CN106947906A (en) * | 2017-03-23 | 2017-07-14 | 合肥仁德电子科技有限公司 | A kind of electronic package material and preparation method thereof |
| CN210429807U (en) * | 2019-08-07 | 2020-04-28 | 江苏欧密格光电科技股份有限公司 | Photoelectric coupler |
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| CN110364519B (en) | 2024-04-23 |
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