CN110364497A - 用于功率控制的电子器件模块和其制造的方法 - Google Patents

用于功率控制的电子器件模块和其制造的方法 Download PDF

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CN110364497A
CN110364497A CN201910260635.8A CN201910260635A CN110364497A CN 110364497 A CN110364497 A CN 110364497A CN 201910260635 A CN201910260635 A CN 201910260635A CN 110364497 A CN110364497 A CN 110364497A
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electronic
component module
component
coldplate
cooling
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托马斯·迈尔
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Zf Frederick Harfin Co Ltd
ZF Friedrichshafen AG
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Abstract

本发明涉及用于功率控制的电子器件模块和其制造的方法。该电子器件模块(100)包括:载体元件(102),该载体元件至少具有带有第一冷却面(106)的第一功率开关元件(104)和带有第二冷却面(110)的第二功率开关元件(108);冷却体(126);以及冷却板(122),该冷却板在电子器件模块(100)的安装状态下不仅与第一冷却面(106)和第二冷却面(110)能导热地相互连接而且也与冷却体(126)能导热地连接。

Description

用于功率控制的电子器件模块和其制造的方法
技术领域
本发明涉及一种用于功率控制的电子器件模块和一种制造用于功率控制的电子器件模块的方法。
背景技术
在制造电子器件模块中,例如为了在车辆中的变速器或控制功率控制,一个重大挑战就是电子结构元件愈加微型化。在此,将越来越多的功率集成到变得越来越小的结构空间中的期望相应地造成了对散热的很高的要求。
为了有效散热,结构元件可以例如通过能导热的中间元件与冷却体耦联。
发明内容
在这种背景下,本发明创造了按照独立权利要求所述的一种经改良的电子器件模块和一种用于制造该电子器件模块的经改良的方法。有利的设计方案由从属权利要求和接下来的说明得出。
在此说明的解决办法基于这样的认知,即,通过电子器件模块的一组功率开关元件、如MOSFET,与共同的冷却板的耦联,可以实现冷却板内的热量散发,其中,在各个功率开关元件之间的区域也能用于运走热量。由此相比为每个功率开关元件配属单独的冷却小板的技术方案,能运走更多的热量。
设置带有下列特征的用于功率控制的电子器件模块:
载体元件,该载体元件至少具有带有第一冷却面的第一功率开关元件和带第二冷却面的第二功率开关元件;
冷却体;以及
冷却板,该冷却板在电子器件模块的安装状态下不仅与第一冷却面和第二冷却面能导热地相互连接而且也与冷却体能导热地连接。
电子器件模块可以例如指的是用于控制变速器、特别是车辆变速器的模块或者功率电子器件模块。载体元件可以例如指的是印制电路板,也称为电路板或PCB(印制电路板)。载体元件可以视实施方式而定地在单侧或双侧装备有电子结构元件。功率开关元件可以是电子开关,例如MOSFET或其它基于半导体的功率开关。第一和第二功率开关元件尤其可以涉及放大器电路的末级。在此,第一和第二功率开关元件可以彼此并联。第一和第二冷却面可以例如涉及第一或第二功率开关元件的背离载体元件的上侧的表面区段。冷却板可以指的是由具有较高的导热能力的材料制成的板、特别是金属板,如铜板或由其它合适的金属制成的板。冷却板可以例如也实现为由不同的材料制成的复合件。冷却体通常可以指的作用为散热片的主体,该主体通过其几何形状或其材料特性可以特别良好地吸收热量并又输出热量。冷却体例如涉及电子器件模块的壳体或该电子器件模块的至少一个区段。冷却体也可以涉及单独的构件,如变速器构件或车辆的其它作用为散热片的部分。冷却体可以例如也实现为金属的嵌入件,例如用于置放在压铸壳体中。
按照一种实施方式,第一功率开关元件和/或第二功率开关元件可以实现为MOSFET、IGBT或晶闸管。第一和第二功率开关元件可以附加或备选地相互并联。该实施方式在电子器件模块的尽可能紧凑的结构形式下实现了有效的功率控制。
按照另一种实施方式,冷却板至少绝大部分都由铜实现和/或包括作为主要组分的铜。冷却板可以例如实现为铜板或铜板材。备选地,冷却板可以由含铜的合金实现。由此能在较低的制造成本下有效地运走热量。
按照另一种实施方式,电子器件模块可以具有如下的连接元件,该连接元件具有带有预限定的热阻的填料。该连接元件可以构造用于在电子器件模块的安装的状态下将冷却板和冷却体能导热地相互连接起来。填料可以例如指的是带有预限定的机械的和化学的性能的所谓的填隙物,填料例如根据这些性能选出。连接元件可以例如实现为膜、板或膏。通过这种实施方式可以进一步提高运走热量的效率。
电子器件模块此外可以具有电绝缘的绝缘层,该绝缘层构造用于在电子器件模块的安装状态下将连接元件和冷却体能导热地相互连接起来。绝缘层通常可以指的是能导热的、但电绝缘的层。绝缘层可以例如在制造冷却体时至少以区段的方式例如通过阳极化施加到冷却体的表面上。通过这种实施方式也可以进一步提高运走热量的效率。
连接元件视实施方式而定地具有预限定的弹性并且/或者是自附着的并且/或者能无残余地清除并且/或者是能导电的并且/或者实现为导热膜。连接元件可以例如借助或者通过预定(期望的)弹性来具体选择。绝缘层可以附加或备选地实现为金属的氧化层。通过这种实施方式可以减少在制造、安装或拆卸电子器件模块时的耗费。此外,由此能以简单的方式补偿在冷却体和冷却板中的相应的表面特性的不均匀性。
按照另一种实施方式,冷却板可以与第一冷却面和/或第二冷却面材料锁合地连接,特别是焊接和/或粘接。由此可以明显改善在第一冷却面和冷却板之间或者在第二冷却面和冷却板之间的导热。
此外,电子器件模块可以具有用于封入电子器件模块的壳体。该壳体可以例如由塑料或金属或者塑料和金属来实现。壳体例如可以流体密封地构造。通过这种实施方式可以保护电子器件模块不受环境影响和机械损伤。
在此,冷却体可以实现为壳体的一部分。由此能尽可能紧凑地实现电子器件模块。
特别有利的是,壳体通过以壳体材料对电子器件模块进行注塑包封来形成。壳体材料例如指的是塑料或含塑料的复合材料。由此能特别成本有利且紧凑地制造壳体。
在此提出的解决办法最终创造出了一种制造用于功率控制的电子器件模块的方法,其中,该方法包括下列步骤:
将冷却板布置在冷却体和载体元件之间,载体元件至少具有带有第一冷却面的第一功率开关元件和带有第二冷却面的第二功率开关元件;以及
将冷却板与第一冷却面、第二冷却面和冷却体能导热地连接,以便制造电子器件模块。
也有利的是一种带有计算机代码的计算机程序产品,计算机代码可以储存在能机读的载体如半导体存储器、硬盘存储器或光学存储器上并且当所述程序在计算机上或装置上实施时,能够用于执行按照前述实施方式中任一种所述的方法。
附图说明
借助附图示例性地详细阐释本发明。图中:
图1是按照本发明的一种实施例的电子器件模块的示意性横剖面图;
图2是按照本发明的另一个实施例的电子器件模块的示意性横截面图;以及
图3是用于制造按照本发明的一种实施例的电子器件模块的方法的流程图。
在对本发明的优选实施例的下列说明中,为在不同的附图中示出的和相似地作用的元件使用相同的或相似的附图标记,其中,取消了对这些元件的重复说明。
具体实施方式
图1示出了按照本发明的一种实施例的用于功率控制的电子器件模块100的示意性横截面图。电子器件模块100,例如用于(电动)车辆的电子的控制器的或功率电子器件的部件,包括也称为电路载体的载体元件102,该载体元件按照本实施例在单侧装备了带第一冷却面106的第一功率开关元件104、带第二冷却面110的第二功率开关元件108和带第三冷却面114的第三功率开关元件112。冷却面106、110、114用于通过功率开关元件104、108、112的背离载体元件102的相应的上侧散热,这也被称为顶侧冷却。功率开关元件104、108、112例如实现为MOSFET末级。
三个冷却面106、110、114例如分别通过在焊接部位118处的焊接与冷却板122的第一接触侧120、例如与铜板材件能导热地连接。冷却面106、110、114备选地通过粘接与第一接触侧120材料锁合地(stoffschlüssig)连接。因此,冷却面106、110、114通过冷却板122彼此热耦联。通过使冷却板122也在载体元件102的处在功率开关元件104、108、112之间的区域上方延伸,可以通过冷却板122特别有效地进行散热,这是因为冷却板122的总表面相比冷却面106、110、114的总表面或单独装在每一个功率开关元件上的冷却小板的总表面明显更大。
冷却板122的与第一接触侧120对置的第二接触侧用于能导热地接触冷却体126,冷却体例如由电子器件模块100的壳体下侧的区段、散热片或冷却器形成。
按照该实施例,冷却体126和冷却板122通过填隙物形式的可选的连接元件128彼此热耦联。在此尤其涉及固态的或膏状的填料,通过填料使冷却板122和冷却体126之间的热阻最小化。填隙物能良好地压缩并且是弹性的。由此能持久地避免冷却板122和冷却体126之间的由公差、结构高度差或不同的膨胀系数引起的气隙。通过填隙物的限定的弹性能达到将相应的压力施加到冷却板122与冷却体126的分界面上。由此即使在很小的按压力下也能达到特别有效的热接驳。此外,填隙物可选地是自附着的,由此实现了简单的预安装。填隙物也视实施方案而定地能无残余地清除。由此实现了电子器件模块100的简单的拆卸。
通过这种用于将功率开关元件104、108、112热接驳到冷却体126上的构思,在此以由冷却面106、110、114、钎焊部位118、冷却板122和连接元件128构成的能导热的复合件的形式,可以在电子器件模块100的尽可能紧凑的结构形式下达到特别有效的散热。
图2示出了按照本发明的另一种实施例的电子器件模块100的示意性横截面图。在图2中示出的电子器件模块100的结构基本上对应借助图1所说明的结构,区别在于,电子器件模块100在此额外具有用于封入电子器件模块100的部件的壳体200。在此,壳体200包围由功率半导体元件104、108、112、冷却板122、连接元件128和冷却体126构成的复合件的大部分。冷却体126的背离载体元件102的表面区段露出,以便实现与电子器件模块100的周边环境的无阻碍的热交换。
壳体200例如通过以合适的壳体材料、例如与热固性塑料或其它合适的塑料或含塑料的复合原料对电子器件模块100进行注塑包封来形成。
此外,冷却体126的面朝载体元件102的表面区段以电绝缘的绝缘层202涂层。绝缘层202例如通过对冷却体126阳极化被实现为也称为阳极氧化层的金属的氧化层。尤其结合能导电的连接元件128以这种方式实现通过冷却体126的特别有效的散热。
接下来又换一种表达来总结在此提出的解决办法。该解决办法涉及结构设计方案,该结构设计方案允许了有效且节省空间地导出所使用的半导体的损耗功率。
特别是在功率半导体中,基于很高的功率而产生了这样的要求,即,将例如设计成MOSFET的多个末级并联。如之前所说明的那样,功率开关元件104、108、112的损耗功率例如能通过由电绝缘的、能导热的材料构成的连接元件128,即填隙物,朝着散热片去地,如壳体200的作用为冷却体126的(铝)底部排导出。在此,主要的热阻由下列参数决定:连接元件128的热导性,功率开关元件距散热片、也就是说距冷却体126的间距以及冷却面106、110、114的大小。
因为仍要良好地处理的可用的填隙物材料在其导热性能方面受到限制,例如限制到约5W/mK,并且所述间距也由于在总系统内的公差,例如结构元件公差或冷却体公差而无法明显减小,所以仅保留对有待观察的面积的提高作为改善措施。
按照本发明的一种特别有利的实施例,铜板材为此作为冷却板122焊接到功率开关元件104、108、112上,以便因此实现明显较大的热作用面。因为钎焊接驳极为良好地导热,所以有待排出的热量能极为良好地转移到铜板材上,铜板材基于其良好的导热能力而能极为良好地排热。
若紧接着附加地将作为连接元件128的绝缘的填隙物施加到冷却板122上,那么基于明显较大的作用面,尽管由于冷却板122的附加的公差而存在例如较大的间距,但仍实现了总系统的明显改善的导热能力。
取代铜板材的是也能使用其它能钎焊的或能粘接的材料。
能使用绝缘的、良好导热的材料,例如热膜作为填隙物。
通过冷却体126的附加的阳极氧化,也就是说通过形成电绝缘的氧化层作为绝缘层202,而能使用导电的填隙物材料,所述填隙物材料具有明显较高的导热能力。
可选地如图2中所示那样对所述结构进行注塑包封。
冷却体126例如构造成水冷却器的部件。
图3示出了用于制造按照一种实施例的电子器件模块、例如之前借助图1和2所说明的电子器件模块的方法300的流程图。在此,在第一步骤310中,将冷却板布置在冷却体和载体元件之间,从而冷却板在一侧与功率开关元件的相应的冷却面对置,而在另一侧与冷却体对置。在第二步骤320中,将冷却板不仅与冷却面而且也与冷却体导热地连接起来,以便制造电子器件模块。
所说明的和在图中示出的实施例仅示例性地选出。不同的实施例可以完全地或参照单个特征地相互组合。实施例也能通过另一个实施例的特征得到补充。
此外,按本发明的方法步骤可以重复并且以不同于所说明的顺序地实施。
若实施例在第一个特征和第二个特征之间包括关联词“和/或”,那么可以理解为,该实施例按照一种实施方式既具有第一特征也具有第二特征以及按照另一种实施方式要么仅具有第一特征要么仅具有第二特征。
附图标记列表
100 电子器件模块
102 载体元件
104 第一功率开关元件
106 第一冷却面
108 第二功率开关元件
110 第二冷却面
112 第三功率开关元件
114 第三冷却面
118 焊接部位
120 第一接触侧
122 冷却板
124 第二接触侧
126 冷却体
128 连接元件
200 壳体
202 绝缘层
300 用于制造电子器件模块的方法
310 布置的步骤
320 能导热地连接的步骤

Claims (13)

1.用于功率控制的电子器件模块(100),其中,所述电子器件模块(100)具有下列特征:
载体元件(102),所述载体元件具有至少一个带有第一冷却面(106)的第一功率开关元件(104)和带有第二冷却面(110)的第二功率开关元件(108);
冷却体(126);以及
冷却板(122),所述冷却板在电子器件模块(100)的安装状态下将第一冷却面(106)和第二冷却面(110)能导热地相互连接而且也与冷却体(126)能导热地连接。
2.按照权利要求1所述的电子器件模块(100),其中,所述第一功率开关元件(104)和/或所述第二功率开关元件(108)实现为MOSFET、IGBT或晶闸管,和/或其中,所述第一功率开关元件(104)和所述第二功率开关元件(108)彼此并联或能彼此并联。
3.按照前述权利要求中任一项所述的电子器件模块(100),其中,所述冷却板(122)至少绝大部分地由铜来实现并且/或者包括作为主要组分的铜。
4.按照前述权利要求中任一项所述的电子器件模块(100),所述电子器件模块(100)具有连接元件(128),所述连接元件具有带有预限定的热阻的填料,其中,所述连接元件(128)构造用于在所述电子器件模块(100)已安装的状态下将所述冷却板(122)和所述冷却体(126)能导热地相互连接起来。
5.按照权利要求4所述的电子器件模块(100),所述电子器件模块(100)具有电绝缘的绝缘层(202),所述绝缘层构造用于在所述电子器件模块(100)已安装的状态下将所述连接元件(128)和所述冷却体(126)能导热地相互连接起来。
6.按照权利要求4或5所述的电子器件模块(100),其中,所述连接元件(128)具有预先确定的弹性并且/或者是自附着的并且/或者能无残余地清除并且/或者是能导电的并且/或者实现为导热膜并且/或者所述绝缘层(202)实现为金属的氧化层。
7.按照前述权利要求中任一项所述的电子器件模块(100),其中,所述冷却板(122)与所述第一冷却面(106)和/或所述第二冷却面(110)材料锁合地连接、特别是焊接和/或粘接。
8.按照前述权利要求中任一项所述的电子器件模块(100),所述电子器件模块(100)具有用于对所述电子器件模块(100)进行封入的壳体(200)。
9.按照权利要求8所述的电子器件模块(100),其中,所述冷却体(126)实现为所述壳体(200)的一部分。
10.按照权利要求8或9所述的电子器件模块(100),其中,所述壳体(200)通过以壳体材料对所述电子器件模块(100)进行注塑包封来形成。
11.制造用于功率控制的电子器件模块(100)的方法(300),其中,所述方法(300)包括下列步骤:
将冷却板(122)布置(310)在冷却体(126)和载体元件(102)之间,所述载体元件具有至少一个带有第一冷却面(106)的第一功率开关元件(104)和带有第二冷却面(110)的第二功率开关元件(108);以及
将冷却板(122)与第一冷却面(106)、第二冷却面(110)和冷却体(126)能导热地连接(320),以便制造所述电子器件模块(100)。
12.计算机程序,其设置用于实施和/或驱控按照权利要求11所述的方法(300)的步骤。
13.能机读的存储介质,在其上储存有按照权利要求12所述的计算机程序。
CN201910260635.8A 2018-04-09 2019-04-02 用于功率控制的电子器件模块和其制造的方法 Pending CN110364497A (zh)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113257791A (zh) * 2020-01-27 2021-08-13 Seg汽车德国有限公司 带有功率电子器件的壳体
CN113891509A (zh) * 2020-07-01 2022-01-04 埃贝赫卡腾有限两合公司 电加热装置

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102019218157A1 (de) * 2019-11-25 2021-05-27 Zf Friedrichshafen Ag Leistungsmodul mit gehäusten Leistungshalbleitern zur steuerbaren elektrischen Leistungsversorgung eines Verbrauchers sowie Verfahren zur Herstellung
DE102020212803B4 (de) 2020-10-09 2022-10-13 Vitesco Technologies Germany Gmbh Steuereinheit für ein Fahrzeug mit mindestens einem Elektromotor und einem Getriebe
DE102021201263A1 (de) * 2021-02-10 2022-08-11 Zf Friedrichshafen Ag Leistungsmodul zum Betreiben eines Elektrofahrzeugantriebs mit einer Direktkühlung der Leistungshalbleiter
DE102022213665A1 (de) 2022-12-14 2024-06-20 Zf Friedrichshafen Ag Kühlvorrichtung für ein Elektronikbauteil

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070057284A1 (en) * 2005-08-02 2007-03-15 Leo Francis Casey Double-sided package for power module
US20080291636A1 (en) * 2007-05-25 2008-11-27 Shogo Mori Semiconductor device
DE102013110815B3 (de) * 2013-09-30 2014-10-30 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitereinrichtung und Verfahren zur Herstellung einer Leistungshalbleitereinrichtung
DE102014013036A1 (de) * 2014-09-02 2016-03-03 Daimler Ag Leistungsmodul für ein Kraftfahrzeug

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5396403A (en) * 1993-07-06 1995-03-07 Hewlett-Packard Company Heat sink assembly with thermally-conductive plate for a plurality of integrated circuits on a substrate
US6724631B2 (en) * 2002-04-22 2004-04-20 Delta Electronics Inc. Power converter package with enhanced thermal management
EP2043412B1 (de) * 2007-09-28 2010-05-19 Eberspächer Controls GmbH & Co. KG Stromschiene mit Wärmeableitung
DE102010001958A1 (de) * 2010-02-16 2011-08-18 Robert Bosch GmbH, 70469 Elektronisches Steuergerät
DE102013212446A1 (de) * 2013-06-27 2015-01-15 Zf Friedrichshafen Ag Elektrische Schaltung und Verfahren zum Herstellen einer elektrischen Schaltung zur Ansteuerung einer Last
DE102014201032A1 (de) * 2014-01-21 2015-07-23 Zf Friedrichshafen Ag Elektrisches Steuergerät, Getriebe mit einem elektrischen Steuergerät und Verfahren zur Herstellung eines elektrischen Steuergeräts

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070057284A1 (en) * 2005-08-02 2007-03-15 Leo Francis Casey Double-sided package for power module
US20080291636A1 (en) * 2007-05-25 2008-11-27 Shogo Mori Semiconductor device
DE102013110815B3 (de) * 2013-09-30 2014-10-30 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitereinrichtung und Verfahren zur Herstellung einer Leistungshalbleitereinrichtung
EP2854173A2 (de) * 2013-09-30 2015-04-01 SEMIKRON Elektronik GmbH & Co. KG Leistungshalbleitereinrichtung und Verfahren zur Herstellung einer Leistungshalbleitereinrichtung
CN104517917A (zh) * 2013-09-30 2015-04-15 赛米控电子股份有限公司 功率半导体器件以及用于制造功率半导体器件的方法
DE102014013036A1 (de) * 2014-09-02 2016-03-03 Daimler Ag Leistungsmodul für ein Kraftfahrzeug

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113257791A (zh) * 2020-01-27 2021-08-13 Seg汽车德国有限公司 带有功率电子器件的壳体
CN113891509A (zh) * 2020-07-01 2022-01-04 埃贝赫卡腾有限两合公司 电加热装置

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