CN110364458A - The cutting process of machined object - Google Patents
The cutting process of machined object Download PDFInfo
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- CN110364458A CN110364458A CN201910266254.0A CN201910266254A CN110364458A CN 110364458 A CN110364458 A CN 110364458A CN 201910266254 A CN201910266254 A CN 201910266254A CN 110364458 A CN110364458 A CN 110364458A
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- cutting
- machined object
- bonding die
- die film
- cutting tool
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Dicing (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Turning (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
Abstract
The cutting process of machined object is provided, the undesirable generation of the processing of machined object can be prevented, and the generation of the overlap of bonding die film can be effectively inhibited.The cutting process of the machined object is cut using machined object of the cutting tool to plate, the machined object is respectively formed with device in the region of the face side of a plurality of segmentation preset lines division by clathrate formation, wherein, the cutting process of the machined object has following step: the bonding die film that laminated belt obtained by bonding die film and dicing tape has been laminated is pasted on the back side of machined object, and the peripheral part of dicing tape is pasted on ring-shaped frame, frame unit is formed；Machined object is kept across laminated belt using the chuck table of cutting apparatus；The cutting slot for cutting off machined object is formed along segmentation preset lines by incision；And the bonding die film exposed in the bottom of cutting slot is cut off and above cutting using cutting tool.
Description
Technical field
The present invention relates to the cutting process of machined object, are cut using machined object of the cutting tool to plate.
Background technique
Along segmentation preset lines (spacing track) to by being formed in face side with IC (Integrated Circuit: integrated
Circuit) etc. be split for the semiconductor wafer of multiple devices or the machined object of the plate of formation such as glass substrate of representative,
To obtain separately including multiple device chips of device.The segmentation of the machined object for example using be equipped with to machined object into
The cutting apparatus of the circular cutting tool of row cutting carries out.Cutting tool is set to rotate and be cut into along segmentation preset lines
Machined object, to be cut machined object and be split.
In most cases, it is pasted with the adhesive layer of the chip engagement of referred to as bonding die film respectively on device chip.It closes
In the stickup of bonding die film, it is known to following method: being pasted on the machined object first before segmentation and cover the machined object
The machined object is split by the bonding die film at the entire back side then along segmentation preset lines together with bonding die film, thus
To the multiple device chips for being attached with bonding die film.
Bonding die film is formed by soft resin etc., therefore when being cut off bonding die film using cutting tool, bonding die film is cut
Cutting knife tool stretches and generates the protrusion (overlap) of beard shape.The overlap can become barrier when carrying out chip engagement to device chip
Hinder, therefore proposes various schemes about the inhibition to overlap.Such as Patent Document 1 discloses a kind of methods: passing through
After cutting tool cuts off bonding die film, bonding die film is implemented to heat, so that overlap be made to shrink.
Patent document 1: Japanese Unexamined Patent Publication 2004-79597 bulletin
When the back side of machined object pastes soft bonding die film, machined object becomes by softness as described above
The state of parts carry.When utilizing cutting tool to cut off machined object and bonding die film simultaneously in this state, sometimes in quilt
It is bad that the referred to as processing such as the defect of chipping or crackle is generated in machining object.
In addition, being proposed as described above about overlap generated when being cut off bonding die film by cutting tool by adding
Method that is hot and making overlap contraction.But in the method, in order to remove overlap, the segmentation independently of machined object is needed
And the process heated, the production efficiency of device chip reduce.
Summary of the invention
The present invention is completed in view of the problem, and project is to provide a kind of cutting process of machined object, energy
The undesirable generation of the processing of machined object is enough prevented, and the generation of the overlap of bonding die film can be effectively inhibited.
According to the present invention, the cutting process of machined object is provided, is cut using machined object of the cutting tool to plate
It cuts, which is respectively formed with device in the region of the face side of a plurality of segmentation preset lines division by clathrate formation
Part, which is characterized in that the cutting process of the machined object has following step: bonding die will be laminated in frame unit forming step
The bonding die film of laminated belt obtained by film and dicing tape is pasted on the back side of the machined object, and by the periphery of the dicing tape
Portion is pasted on ring-shaped frame, forms frame unit；Step is kept, using the chuck table of cutting apparatus across the laminated belt
The machined object is kept；1st cutting step, according to the direction for moving the lower end of the cutting tool rotated and is somebody's turn to do
The consistent mode of the moving direction of chuck table moves the chuck table and the cutting tool relatively, makes the bite
Tool cuts the machined object, to make the bonding die film remain along segmentation preset lines formation and cut what the machined object was cut off
Cut slot；And the 2nd cutting step, implement the 1st cutting step after, according to make rotation the cutting tool lower end institute
The mode that the moving direction in mobile direction and the chuck table becomes opposite direction makes the chuck table and the bite
Tool relatively moves, and is cut off the bonding die film exposed in the bottom of the cutting slot using the cutting tool.
In addition, in the cutting process of machined object of the invention, in the 1st cutting step, the cutting tool to this
The depth of bonding die film incision is 5 μm or less.
In the cutting process of machined object of the invention, the machined object being pasted onto bonding die film is being cut by incision
After disconnected, bonding die film is cut off by above cutting.Thereby, it is possible to prevent the production of the processing of machined object bad (chipping, crackle etc.)
It is raw, and the generation of the overlap of bonding die film can be effectively inhibited.
Detailed description of the invention
Fig. 1 is the perspective view for showing the structural example of frame unit.
Fig. 2 is the broken section for showing the state kept using the chuck table of cutting apparatus to machined object
Side view.
(A) of Fig. 3 is the side elevation in partial section for showing the case where forming cutting slot, and (B) of Fig. 3 is the 1st cutting step
In cutting tool lower end enlarged drawing.
Fig. 4 is side elevation in partial section the case where showing the processing feeding in the 1st cutting step.
(A) of Fig. 5 is the side elevation in partial section for showing the case where cutting off bonding die film, and (B) of Fig. 5 is the 2nd cutting step
The enlarged drawing of the lower end of cutting tool in rapid.
Fig. 6 is side elevation in partial section the case where showing the processing feeding in the 2nd cutting step.
Label declaration
11: frame unit；13: machined object；13a: front；13b: the back side；15: segmentation preset lines；17: device；19: ring
Shape frame；21: laminated belt；23: bonding die film；25: dicing tape；27: cutting slot；2: cutting apparatus；4: chuck table；4a: it protects
Hold face；6: cutting unit；8: fixture；10: main shaft；12: cutting tool.
Specific embodiment
Hereinafter, the embodiments of the present invention will be described with reference to the drawings.Fig. 1 is to show to utilize 19 pairs of this realities of ring-shaped frame
Apply the plate of mode machined object 13 supported obtained by frame unit 11 structural example perspective view.
Machined object 13 is formed as discoid using semiconductor wafer or glass substrate etc., and machined object 13 has front
13a and back side 13b.Machined object 13 is divided into multiple areas by a plurality of segmentation preset lines (spacing track) 15 of clathrate arrangement
Domain is respectively formed with the device 17 being made of IC etc. in the positive side 13a in multiple region.Added for 15 pairs of preset lines along segmentation
Work object 13 is split, to obtain the multiple device chips for being respectively provided with device 17.
In addition, there is no limit for the material of machined object 13, shape, structure, size etc..It, can such as machined object 13
To use semiconductor substrate (silicon substrate, SiC substrate, GaAs substrate, InP substrate, GaN substrate etc.), glass substrate, process for sapphire-based
Plate, ceramic substrate, resin substrate, metal substrate etc..In addition, the type of device 17, quantity, shape, structure, size, configuration etc.
Also there is no limit.
When to be split to machined object 13, first of all for the chuck table by processing unit (plant) to machined object
13 are kept, (the frame unit shape of frame unit 11 obtained by formation supports machined object 13 using ring-shaped frame 19
At step).
As shown in Figure 1, machined object 13 is laminated by obtained by the circular bonding die film 23 of stacking and circular dicing tape 25
Band 21 and be supported on ring-shaped frame 19.Laminated belt 21 is to paste soft bonding die film 23 in dicing tape 25 and constitute, bonding die
Film 23 is according to more than the diameter that diameter is machined object 13 and be that the diameter mode below of dicing tape 25 is formed.
The bonding die film 23 of laminated belt 21 is pasted on the back side 13b of machined object 13, and by the periphery of dicing tape 25
Portion is pasted on ring-shaped frame 19.It is utilized frame unit obtained by ring-shaped frame 19 supports machined object 13 as a result,
11。
In addition, there is no limit for the material of bonding die film 23 and dicing tape 25.For example, bonding die film 23 can be by acrylic acid series and ring
The resin of oxygen system is formed, and dicing tape 25 can be formed by resins such as polyolefin or vinyl chloride.
Then, using the chuck table of cutting apparatus across laminated belt 21 to the machined object for being supported on ring-shaped frame 19
13 are kept and (keep step).Fig. 2 is to show to keep machined object 13 using the chuck table 4 of cutting apparatus 2
State side elevation in partial section.
Cutting apparatus 2 includes chuck table 4, carries out attracting holding to machined object 13；And fixture 8, to branch
The ring-shaped frame 19 for holding machined object 13 is fixed.Machined object 13 configures on chuck table 4 across laminated belt 21,
Ring-shaped frame 19 is fixed by fixture 8.A part of the upper surface of chuck table 4, which is constituted, to be added across 21 Duis of laminated belt
Work object 13 carry out attracting holding retaining surface 4a, retaining surface 4a via the inside for being formed in chuck table 4 attraction road (not
Diagram) etc. and with attract source (not shown) connect.
In addition, being provided with processing feed mechanism (not shown) in the lower section of chuck table 4.The processing feed mechanism has
The function of moving chuck table 4 in the processing direction of feed (1st horizontal direction) substantially parallel with retaining surface 4a.Separately
Outside, it also can replace chuck table 4 and using being kept using mechanical means or electrical method etc. to machined object 13
Chuck table.
In addition, cutting apparatus 2 has the cutting list for being cut machined object 13 in the top of chuck table 4
Member 6.Cutting unit 6 has main shaft 10, which has axle center on the direction substantially parallel relative to retaining surface 4a, in master
The front end of axis 10 is equipped with cricoid cutting tool 12.The connection (not shown) of the rotary driving sources such as main shaft 10 and motor, peace
Cutting tool 12 loaded on main shaft 10 is rotated by the power transmitted from rotary driving source.Cutting tool 12 is for example by utilizing
Electroforming grinding tool obtained by nickel plating fixed diamond abrasive grain is constituted.
In addition, cutting unit 6 is supported in elevating mechanism (not shown) and index feed mechanism (not shown).Elevating mechanism
Have the function of making cutting unit 6 to move (lifting) in incision direction of feed (vertical direction), index feed mechanism is with making
Cutting unit 6 is in index feed substantially parallel with retaining surface 4a and substantially vertical with processing direction of feed (the 1st horizontal direction)
The function of being moved on direction (the 2nd horizontal direction).
In keeping step, machined object 13 is being configured on the retaining surface 4a of chuck table 4 across laminated belt 21
And in the state of being fixed by fixture 8 to ring-shaped frame 19, to the negative pressure in retaining surface 4a effect attraction source.As a result, by
Machining object 13 is held in chuck table 4 across laminated belt 21 in the state that the positive side 13a is exposed to top.
Then, cutting tool 12 is made to cut machined object 13, to keep bonding die film 23 residual along the segmentation formation of preset lines 15
The cutting slot 27 (the 1st cutting step) for staying and cutting off machined object 13.(A) of Fig. 3 is to show to be formed in the 1st cutting step
The side elevation in partial section of the case where cutting slot 27.
In the 1st cutting step, so that cutting tool 12 is rotated and is cut machined object 13 on one side, carry out making chuck work on one side
Make the processing feeding that platform 4 relatively moves in substantially parallel with retaining surface 4a and axle center generally perpendicular direction with main shaft 8.By
This, forms the linear cutting slot 27 for cutting off machined object 13.
The cutting tool in the 1st cutting step is set by cutting machined object 13 and in the way of not cutting off bonding die film 23
Height in 12 vertical direction.(B) of Fig. 3 is the enlarged drawing of the lower end of the cutting tool 12 in the 1st cutting step.Such as figure
Shown in 3 (B), the quilt in such a way that lower end becomes the height roughly the same with the back side 13b of machined object 13 of cutting tool 12
Positioning.
In this state, the processing feeding for relatively moving chuck table 4 and cutting tool 12 is carried out, thus bite
Bonding die film 23 will not be cut off but cut off machined object 13 by tool 12.As a result, becoming bonding die film 23 is passing through cutting tool
12 and formed cutting slot 27 bottom expose state.
In this way, setting cutting tool 12 in such a way that cutting tool 12 does not cut bonding die film 23 in the 1st cutting step
Height, to only machined object 13 be cut off by cutting tool 12.Thereby, it is possible to avoid by machined object 13 and bonding die
The processing bad (chipping, the crackle etc. of the back side side 13b) of issuable machined object 13 in the case that film 23 is cut off simultaneously
It generates.
Alternatively, it is also possible to set the height of cutting tool 12 in such a way that cutting tool 12 slightly cuts bonding die film 23.
As long as cutting tool 12 is less than the thickness of bonding die film 23 to the penetraction depth of bonding die film 23, bonding die film 23 is not cut off and energy
Enough residuals.But when the depth that cutting tool 12 cuts bonding die film 23 increases, it is bad to be easy to produce processing, therefore preferably cut
Entering depth is, for example, 5 μm or less.
In addition, carrying out following processing feeding: according to the lower end institute of the cutting tool 12 of rotation in the 1st cutting step
Mobile direction and the consistent mode of moving direction of chuck table 4 move chuck table 4 and cutting tool 12 relatively
It is dynamic.
Fig. 4 is side elevation in partial section the case where showing the processing feeding in the 1st cutting step.As shown in figure 4, on one side
It rotates cutting tool 12 in the direction indicated by the arrow, chuck table 4 is made to process feeding side shown in arrow B on one side
It moves up.Cutting tool 12 is carried out from the positive side 13a of machined object 13 towards the back side side 13b to machined object 13 as a result,
The so-called incision cut.
Positive 13a is being exposed and back side 13b is supported in the machined object of bearing part (in Fig. 4 for bonding die film 23)
In the case where 13 cuttings, machined object 13 is cut from the back side side 13b towards the front side 13a when the progress of cutting tool 12
When cutting on so-called, it is easy to generate chipping in the positive side 13a.On the other hand, the case where being cut off machined object 13b by incision
Under, there is the bearing part by carry the back side side 13b to inhibit the trend of the generation of chipping.
Therefore, in the present embodiment, machined object 13 is cut off by incision.Thereby, it is possible to inhibit machined object 13
Segmentation when chipping generation.
As described above, cutting tool 12 is not cutting bonding die film 23 or the less condition of approach in the 1st cutting step
Machined object 13 is cut off by incision down.Thereby, it is possible to inhibit the processing caused by the cutting of machined object 13 bad
Generation.
Then, will be exposed in the bottom of the cutting slot 27 formed by the 1st cutting step using cutting tool 12 viscous
The cutting of piece film 23 (the 2nd cutting step).(A) of Fig. 5 is the office for showing the case where cutting off bonding die film 23 in the 2nd cutting step
Portion's sectional side view.
In the 2nd cutting step, on one side rotates cutting tool 12 and be cut into the viscous of the bottom of cutting slot 27 exposing
Piece film 23 carries out making chuck table 4 in axle center generally perpendicular direction substantially parallel with retaining surface 4a and with main shaft 8 on one side
The processing of upper movement is fed.Bonding die film 23 is cut off along cutting slot 27 as a result,.
The height in the vertical direction of the cutting tool 12 in the 2nd cutting step is set in the way of cutting off bonding die film 23
Degree.(B) of Fig. 5 is the enlarged drawing of the lower end of the cutting tool 12 in the 2nd cutting step.As shown in (B) of Fig. 5, bite
Tool 12 is positioned as follows: the lower end of cutting tool 12 configures the position in the lower surface than bonding die film 23 on the lower
Set, cutting tool 12 can the whole thickness direction to bonding die film 23 cut.
By carrying out processing feeding in this state, so that cutting tool 12 cuts off bonding die film 23 along cutting slot 27.
But in the 2nd cutting step, the direction according to the lower end of the cutting tool 12 of rotation moved different from the 1st cutting step
The mode for becoming opposite direction with the moving direction of chuck table 4 moves chuck table 4 and cutting tool 12 relatively.
Fig. 6 is side elevation in partial section the case where showing the processing feeding in the 2nd cutting step.As shown in fig. 6, on one side
It rotates cutting tool 12 in the direction indicated by the arrow, chuck table 4 is made to process feeding side shown in arrow C on one side
It moves up.As a result, cutting tool 12 carry out bonding die film 23 is cut from lower face side towards upper surface side on cut.
When being cut off bonding die film 23 using cutting tool 12, bonding die film 23 is cut the stretching of cutter 12, generates sometimes recklessly
The protrusion (overlap) of palpus shape.When the overlap can become to the progress chip engagement of device chip obtained from machined object 13 is divided
Obstacle, therefore preferably do not generate the overlap as far as possible.
As shown in fig. 6, the upper surface side of bonding die film 23 is covered by machined object 13, lower face side is by than machined object 13
In the case that soft dicing tape 25 covers, when carrying out the cutting of bonding die film 23 using incision in the same manner as the 1st cutting step,
Bonding die film 23 is cut towards more soft 25 side of dicing tape.When cutting tool 12 is like this towards soft layer to bonding die film
23 when being cut, and there is the trend for the overlap for being easy to produce bonding die film 23.
Therefore, in the present embodiment, using the cutting for above cutting into row bonding die film 23, direction is higher than 25 rigidity of dicing tape
Machined object 13 cuts bonding die film 23.It can inhibit the generation of the overlap caused by the cutting of bonding die film 23 as a result,.
In addition, can respectively processing feeding continuously implement the 1st cutting step on road toward road and returning and the 2nd cutting walks
Suddenly.Specifically, chuck table 4 is made to move (past road) in the 1st processing direction of feed shown in arrow B (Fig. 4) first, from
And machined object 13 is cut off using incision.Then, do not change the direction of rotation of cutting tool 12 and make chuck table in arrow
2nd processing direction of feed shown in head C (Fig. 6) is to move on the direction opposite with the 1st processing direction of feed and (return road), thus sharp
Bonding die film 23 is cut off with cutting.
In this way, can lead to after the 1st cutting step about using the 2nd cutting step for cutting off bonding die film 23 is above cut
It crosses the moving direction for changing chuck table 4 and continuously implements.Therefore, it is not necessary to the new independent process such as additional heat treatment and
The generation of the overlap of bonding die film 23 can be effectively inhibited.
In addition, the movement on index feed direction of the main shaft 10 of cutting unit 6 need not be made just after the 1st cutting step
Enough implement the 2nd cutting step.Therefore, the cutting region of cutting tool 12 will not be generated in the 1st cutting step and the 2nd cutting step
The positional shift in domain can prevent from cutting machined object 13 in the 2nd cutting step using above cutting.Thereby, it is possible to keep away
Exempt to generate chipping in the positive side 13a of machined object 13.
When implementing the 1st cutting step and the 2nd cutting step to all segmentation preset lines 15, machined object 13 is divided
At with device 17 and being pasted with multiple device chips of bonding die film.The processing that has been inhibited as a result, is bad (chipping, crackle etc.)
With the good device chip of the generation of the overlap of bonding die film.
Result after being cut off machined object 13 and bonding die film 23 by the 1st cutting step and the 2nd cutting step is shown in
Table 1.Table 1, which is shown, is set as -5 μm, 0 μm, 5 μ to the depth that bonding die film 23 is cut for cutting tool 12 in the 1st cutting step
M, 10 μm when obtained device chip whether there is or not chipping and the generations of the overlap of bonding die film 23.In addition, what bonding die film 23 used
It is the bonding die film 23 with a thickness of 30 μm.
In addition, -5 μm of the penetraction depth back side 13b for referring to that the lower end by cutting tool 12 is positioned at than machined object 13 are leaned on
The condition for the position that 5 μm of top.In addition, 0 μm of the penetraction depth back for referring to the lower end according to cutting tool 12 Yu machined object 13
The mode that face 13b becomes identical height carries out cutting tool 12 to be positioned such that the item that cutting tool 12 does not cut bonding die film 23
Part.
[table 1]
| The depth [μm] that cutting tool is cut to bonding die film | The chipping of device chip | The overlap of bonding die film |
| -5 | Have | Nothing |
| 0 | Nothing | Nothing |
| 5 | Nothing | Nothing |
| 10 | Have | Nothing |
According to table 1, it is not cut according to a part that penetraction depth is -5 μm of i.e. back side 13b of machined object 13
It cuts, in the case where the 1st cutting step of condition implementation that machined object 13 is not completely severed, chipping is generated on device chip.
It is therefore preferable that the 1st cutting step in the way of at least machined object 13 can be cut off by penetraction depth be set as 0 μm with
On.
It is found that not generating the chipping of device chip in the case where penetraction depth is 0 μm or more and 5 μm of situations below, obtaining good
Good result.On the other hand, when penetraction depth reaches 10 μm, the result that chipping is generated on device chip is obtained.Therefore, special
The depth that cutting tool 12 in not the preferably the 1st cutting step is cut to bonding die film 23 is 5 μm or less.But, if the production of chipping
Raw frequency is certain frequency hereinafter, can also being then set to be large in 5 μm by penetraction depth and implement the 1st cutting step.
In addition, no matter penetraction depth is any value, the overlap of bonding die film 23 is not observed.Thus, it can be known that even if the 1st
Bonding die film 23 is according to being cut to a certain degree in cutting step, by being cut bonding die film 23 in the 2nd cutting step using above cutting
It is disconnected, it can also prevent the generation of overlap.
As described above, bonding die film will be pasted by incision in the processing method of the machined object of present embodiment
After machined object 13 on 23 is cut off, bonding die film 23 is cut off by above cutting.Thereby, it is possible to prevent the processing of machined object 13
The generation of bad (chipping, crackle etc.), and the generation of the overlap of bonding die film 23 can be effectively inhibited.
In addition to this, the structure of above embodiment, method etc., then can be with without departing from the range of the purpose of the present invention
It is suitably changed and implemented.
Claims (2)
1. a kind of cutting process of machined object is cut, the machined object using machined object of the cutting tool to plate
Device is respectively formed in the region of the face side of a plurality of segmentation preset lines division by clathrate formation, which is characterized in that
The cutting process of the machined object has following step:
The bonding die film that laminated belt obtained by bonding die film and dicing tape has been laminated is pasted on this and is added by frame unit forming step
On the back side of work object, and the peripheral part of the dicing tape is pasted on ring-shaped frame, forms frame unit；
Step is kept, the machined object is kept across the laminated belt using the chuck table of cutting apparatus；
1st cutting step, the movement in the direction and the chuck table moved according to the lower end for the cutting tool for making rotation
The consistent mode in direction moves the chuck table and the cutting tool relatively, so that the cutting tool is cut this and is processed
Object, to form the cutting slot for remaining the bonding die film and cutting off the machined object along the segmentation preset lines；And
2nd cutting step is moved after implementing the 1st cutting step according to the lower end for the cutting tool for making rotation
Direction and the chuck table moving direction become opposite direction mode make the chuck table and the cutting tool phase
It moves, is cut off the bonding die film exposed in the bottom of the cutting slot over the ground using the cutting tool.
2. the cutting process of machined object according to claim 1, which is characterized in that
In the 1st cutting step, the depth which cuts to the bonding die film is 5 μm or less.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018-075171 | 2018-04-10 | ||
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013069814A (en) * | 2011-09-21 | 2013-04-18 | Renesas Electronics Corp | Method for manufacturing semiconductor device |
| JP2016039345A (en) * | 2014-08-11 | 2016-03-22 | 株式会社ディスコ | Wafer processing method |
| TW201614723A (en) * | 2014-09-18 | 2016-04-16 | Disco Corp | Wafer processing method |
| JP2017011133A (en) * | 2015-06-23 | 2017-01-12 | 株式会社ディスコ | Wafer processing method |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004079597A (en) | 2002-08-12 | 2004-03-11 | Disco Abrasive Syst Ltd | Working method of semiconductor chip |
| JP2005223130A (en) * | 2004-02-05 | 2005-08-18 | Disco Abrasive Syst Ltd | Splitting method of semiconductor wafer |
| JP2006059914A (en) * | 2004-08-18 | 2006-03-02 | Matsushita Electric Ind Co Ltd | Semiconductor device and manufacturing method thereof |
| JP5045745B2 (en) * | 2007-04-05 | 2012-10-10 | 日立化成工業株式会社 | Semiconductor chip manufacturing method, semiconductor adhesive film, and composite sheet using the same |
| JP5122893B2 (en) * | 2007-09-14 | 2013-01-16 | 株式会社ディスコ | Device manufacturing method |
| JP2010123823A (en) * | 2008-11-21 | 2010-06-03 | Disco Abrasive Syst Ltd | Cutting device |
| JP2011222847A (en) * | 2010-04-13 | 2011-11-04 | Toppan Printing Co Ltd | Ic chip and method of manufacturing the same |
| US8647966B2 (en) * | 2011-06-09 | 2014-02-11 | National Semiconductor Corporation | Method and apparatus for dicing die attach film on a semiconductor wafer |
| US10535554B2 (en) * | 2016-12-14 | 2020-01-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor die having edge with multiple gradients and method for forming the same |
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| JP2013069814A (en) * | 2011-09-21 | 2013-04-18 | Renesas Electronics Corp | Method for manufacturing semiconductor device |
| JP2016039345A (en) * | 2014-08-11 | 2016-03-22 | 株式会社ディスコ | Wafer processing method |
| TW201614723A (en) * | 2014-09-18 | 2016-04-16 | Disco Corp | Wafer processing method |
| JP2017011133A (en) * | 2015-06-23 | 2017-01-12 | 株式会社ディスコ | Wafer processing method |
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