CN110361096B - Infrared detector structure with high filling factor - Google Patents
Infrared detector structure with high filling factor Download PDFInfo
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- CN110361096B CN110361096B CN201910560491.8A CN201910560491A CN110361096B CN 110361096 B CN110361096 B CN 110361096B CN 201910560491 A CN201910560491 A CN 201910560491A CN 110361096 B CN110361096 B CN 110361096B
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- 239000000758 substrate Substances 0.000 claims abstract description 16
- 239000004065 semiconductor Substances 0.000 claims abstract description 14
- 239000010410 layer Substances 0.000 claims description 68
- 239000002184 metal Substances 0.000 claims description 30
- 239000011241 protective layer Substances 0.000 claims description 2
- 238000010521 absorption reaction Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 206010070834 Sensitisation Diseases 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000008313 sensitization Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J2005/106—Arrays
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- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
The invention discloses an infrared detector structure with high filling factor, which comprises the following components from bottom to top: the micro-bridge structure comprises a semiconductor substrate positioned on a first layer, a first conductive beam and a second conductive beam positioned on a second layer, and a micro-bridge deck positioned on a third layer; the first conductive beam and the second conductive beam are respectively provided with a first connecting end and a second connecting end, the lower surface of the first connecting end of the first conductive beam and the lower surface of the first connecting end of the second conductive beam are respectively connected with the upper surface of the semiconductor substrate through a first conductive supporting column, and the upper surface of the second connecting end of the first conductive beam and the upper surface of the second connecting end of the second conductive beam are respectively connected with the lower surface of the bridge deck of the micro-bridge through a second conductive supporting column. The invention can improve the filling factor and simultaneously use larger area space for the first conductive support column, the second conductive support column, the first conductive beam, the second conductive beam and other structures, thereby further improving the product performance.
Description
Technical Field
The invention relates to the technical field of infrared detectors, in particular to an infrared detector structure with a high filling factor.
Background
With the increase of the infrared detector array, the area of a single pixel is also continuously reduced.
In the whole infrared pixel microbridge structure of the existing infrared detector, structures such as a support, an electric connection and a beam are generally positioned on the same layer as a microbridge bridge floor. Among them, the bridge deck of the microbridge is a key component for absorbing incident infrared rays. Due to the requirements of performance and process, structures such as supports, electric connections and beams need to occupy a certain area, so that the occupation ratio of the micro-bridge area in the pixel area is influenced, the proportion of the infrared photosensitive micro-bridge area is reduced, and the performance of the detector is influenced.
Therefore, how to increase the filling factor (filing factor) of the infrared detector, that is, how to increase the proportion of the micro-bridge area to the whole pixel area, has become the key for ensuring the performance of the infrared detector while reducing the size of the pixel.
Disclosure of Invention
The present invention is directed to overcome the above-mentioned drawbacks of the prior art, and to provide an infrared detector structure with a high fill factor.
In order to achieve the purpose, the technical scheme of the invention is as follows:
an infrared detector structure with high filling factor comprises from bottom to top: the micro-bridge structure comprises a semiconductor substrate positioned on a first layer, a first conductive beam and a second conductive beam positioned on a second layer, and a micro-bridge deck positioned on a third layer; the first conductive beam and the second conductive beam are respectively provided with a first connecting end and a second connecting end, the lower surface of the first connecting end of the first conductive beam and the lower surface of the first connecting end of the second conductive beam are respectively connected with the upper surface of the semiconductor substrate through a first conductive supporting column, and the upper surface of the second connecting end of the first conductive beam and the upper surface of the second connecting end of the second conductive beam are respectively connected with the lower surface of the bridge deck of the micro-bridge through a second conductive supporting column.
Further, the first conductive beam and the second conductive beam are located in an area below and inside the micro-bridge deck.
Further, the first conductive beam and the second conductive beam have a repeated turning structure in a horizontal direction.
Furthermore, the bridge deck of the microbridge is provided with an infrared absorption and sensitive layer for infrared sensitization, and the infrared absorption and sensitive layer is connected with the second conductive support column.
Further, the infrared absorption and sensitive layer is connected with the second conductive support column through the first metal electrode layer.
Further, the surfaces of the infrared absorption and sensitive layer and the first metal electrode layer are covered with a release protective layer.
Furthermore, the first conductive beam and the second conductive beam are respectively provided with a second metal electrode layer, and the second metal electrode layers are respectively connected with the first conductive support column and the second conductive support column.
Furthermore, the first conductive support column and the second conductive support column are respectively provided with a third metal electrode layer, and the first metal electrode layer, the second metal electrode layer and the third metal electrode layer are connected.
Further, the surface of the second metal electrode layer is covered with a release protection layer, and the outer side of the third metal electrode layer is covered with a dielectric layer.
Further, the first conductive support column and/or the second conductive support column are/is of a column structure vertically upwards or of a conductive support beam structure obliquely upwards.
According to the technical scheme, the first conductive support column, the second conductive support column, the first conductive beam and the second conductive beam which are used for electric connection and support are arranged below the bridge deck of the micro-bridge, so that the filling factor can be improved, the structures such as the first conductive support column, the second conductive support column, the first conductive beam and the second conductive beam can use larger area space, the whole pixel area can be utilized for design, and the product performance is further improved.
Drawings
Fig. 1-3 are schematic top views of layers in an infrared detector structure with a high fill factor according to a preferred embodiment of the invention.
Fig. 4-6 are schematic partial cross-sectional views of fig. 1-3, respectively. Fig. 4 is a partial sectional view of the direction from a-a in fig. 1, fig. 5 is a partial sectional view of the direction from B-B in fig. 2, and fig. 6 is a partial sectional view of the direction from C-C in fig. 3.
Fig. 7-9 are schematic views of an inclined upward conductive support beam structure according to a preferred embodiment of the invention.
Detailed Description
The following describes embodiments of the present invention in further detail with reference to the accompanying drawings.
In the following detailed description of the embodiments of the present invention, in order to clearly illustrate the structure of the present invention and to facilitate explanation, the structure shown in the drawings is not drawn to a general scale and is partially enlarged, deformed and simplified, so that the present invention should not be construed as limited thereto.
In the following description of the present invention, please refer to fig. 1-3, and fig. 1-3 are schematic views of the structures of the layers in an infrared detector structure with high fill factor according to a preferred embodiment of the present invention. As shown in fig. 1-3, an infrared detector structure with high fill factor of the present invention comprises, from bottom to top: a semiconductor substrate 10 at a first layer, a first conductive beam 14 and a second conductive beam 13 at a second layer, and a microbridge deck 17 at a third layer. Wherein the first conductive beam 14 and the second conductive beam 13 are independent and are arranged in the same layer; and, the first conductive beam 14 and the second conductive beam 13 are provided with a first connection terminal and a second connection terminal, respectively.
Please refer to fig. 4 in conjunction with fig. 1. The semiconductor substrate 10 may employ a silicon substrate (sub) 10; conventional device layers may be provided on the silicon substrate 10. Two first conductive support posts 11, 12 are provided on the upper surface of the semiconductor substrate 10 for providing support to the microbridge structure of the overlying infrared detector and electrical connection to the semiconductor substrate 10. The two first conductive support pillars 11, 12 may be respectively located at two diagonal positions of the semiconductor substrate 10 to form a stable support for the micro-bridge structure. The present invention is not limited thereto.
Please refer to fig. 5 in conjunction with fig. 2. The upper ends of the two first conductive support columns 11 and 12 are connected to the lower surfaces of the first conductive beam 14 and the second conductive beam 13, respectively. The method specifically comprises the following steps: the upper end of one of the first conductive support columns 11 is connected to the lower surface of the first connection end of the first conductive beam 14, and the upper end of the other first conductive support column 12 is connected to the lower surface of the first connection end of the second conductive beam 13.
Please refer to fig. 6 in combination with fig. 3. Two second conductive support posts 16, 15 are provided on the upper surfaces of the first and second conductive beams 14, 13 for providing support to an overlying microbridge deck 17 and for making electrical connection with the semiconductor substrate 10. The two second conductive support pillars 16, 15 may be respectively located at two opposite side positions under the micro-bridge deck 17 to form a stable support for the micro-bridge structure together with the two first conductive support pillars 11, 12. The present invention is not limited thereto.
The specific connection between the two second conductive support columns 16 and 15 and the first conductive beam 14, the second conductive beam 13 and the micro-bridge deck 17 can be as follows: the upper ends of the two second conductive support columns 16 and 15 are respectively connected to two opposite side positions below the micro-bridge deck 17, the lower end of one of the two second conductive support columns 16 and 15 is connected to the upper surface of the second connection end of the first conductive beam 14, and the lower end of the other second conductive support column 15 is connected to the upper surface of the second connection end of the second conductive beam 13.
Please refer to fig. 1-6. The first conductive beam 14 and the second conductive beam 13 are arranged in the area below the micro-bridge deck 17, so that the filling factor of the infrared detector can be maximized, and the structures such as the first conductive support columns 11 and 12, the second conductive support columns 16 and 15, the first conductive beam 14 and the second conductive beam 13 can use larger area space, thereby further improving the product performance.
For example, the first conductive beam 14 and the second conductive beam 13 may be designed to have a repeated turning structure in a horizontal direction, and the first conductive beam 14 and the second conductive beam 13 are provided independently of each other. Wherein, the first connection ends of the first conductive beam 14 and the second conductive beam 13 can be located at two diagonal positions below the micro-bridge deck 17 (corresponding to the positions of the first conductive support columns 11 and 12), and the second connection ends of the first conductive beam 14 and the second conductive beam 13 can be located at two opposite sides below the micro-bridge deck 17 (corresponding to the positions of the second conductive support columns 16 and 15) and located at the inner sides of the first conductive beam 14 and the second conductive beam 13, as shown in fig. 2. The present invention is not limited thereto.
Please refer to fig. 6. An infrared absorbing and sensitive layer 22 for infrared sensitization is arranged on the micro-bridge deck 17. The infrared absorbing and sensing layer 22 can be electrically connected to the underlying second conductive support posts 15, 16, respectively, through the first metal electrode layer 20.
As an alternative embodiment, the surfaces of the infrared absorbing and sensitive layer 22 and the first metal electrode layer 20 may be covered with a release protection layer 21.
Please refer to fig. 6 and 5. The first conductive beam 14 and the second conductive beam 13 may be respectively provided with a second metal electrode layer 19; the second metal electrode layers 19 on the first and second conductive beams 14 and 13 are connected to the first and second conductive support pillars 11 and 12 and 16 and 15, respectively.
As an alternative embodiment, the surface of the second metal electrode layer 19 may also be covered with a release protection layer 18.
Further, third metal electrode layers may be respectively disposed inside the first conductive support pillars 11, 12 and the second conductive support pillars 16, 15; the third metal electrode layer is used for electrically connecting the first conductive support pillars 11 and 12 and the second conductive support pillars 16 and 15 with the second metal electrode layer 19 and the first metal electrode layer 20.
As other alternative embodiments, the outside of the third metal electrode layer may be coated with a dielectric layer.
Referring to fig. 7-9, fig. 7-9 are schematic views of an inclined upward conductive support beam according to a preferred embodiment of the invention. Wherein fig. 7 shows a pre-release state of one of the electrically conductive support beam structures 24 inclined upward, fig. 8 shows a post-release state of one of the electrically conductive support beam structures 24 inclined upward, and fig. 9 shows a top-view structure of the electrically conductive support beam structures 24, 24' inclined upward. As shown in fig. 7-9, the first conductive support column and/or the second conductive support column can be either the vertically upward pillar- shaped structures 11, 12 in fig. 1-6 or the obliquely upward conductive support beam structures 24, 24' in this embodiment.
Advantages of using an obliquely upward conductive support beam structure 24, 24' may include:
1) the total length of the conductive beam can be further increased, so that the heat conduction speed is reduced, and the performance is improved;
2) the thickness of the sacrificial layer can be effectively reduced, thereby simplifying the process complexity.
One method of manufacturing the inclined upward electrically conductive support beam structure 24, 24' may be:
as shown in fig. 7, a thin sacrificial layer 25 is deposited on the semiconductor substrate 10 and patterned to form grooves connected to the lower electrode terminals 23, 23'.
An upwardly inclined conductive support beam material is deposited in the recesses and patterned to provide a compressive stress pattern, resulting in a conductive support beam structure 24, 24' that is under compressive stress prior to release.
A first layer of conductive beam material is then deposited and patterned on the sacrificial layer 25 to have a stress mode that is a zero stress mode (or a stress within +/-1000 MPa), resulting in conductive beams (first conductive beam 14 and second conductive beam 13) that have a zero stress state before release.
And so on in the following.
As shown in fig. 8, a sacrificial layer release process is performed. After release, the conductive beam will bend upwards due to the greater stress of the material of the conductive support beam, and form a conductive support beam structure 24, 24' that is inclined upwards; the conductive beam structure with zero stress (the first conductive beam 14 and the second conductive beam 13, please refer to fig. 9) will not bend.
The above film layer structure may be a single layer or a multilayer.
General knowledge of the structure of an infrared detector can be understood by reading the inventor's previous patent literature. The present invention can be supplemented by the present invention not related to the above-described structure by referring to these patent documents.
In summary, the first conductive support column, the second conductive support column, the first conductive beam and the second conductive beam for electrical connection and support are arranged below the bridge deck of the microbridge, so that the filling factor can be improved, the structures such as the first conductive support column, the second conductive support column, the first conductive beam and the second conductive beam can use larger area space, the whole pixel area can be used for design, and the product performance can be further improved.
The above description is only a preferred embodiment of the present invention, and the embodiments are not intended to limit the scope of the present invention, so that all equivalent structural changes made by using the contents of the specification and the drawings of the present invention should be included in the scope of the present invention.
Claims (10)
1. The utility model provides a high fill factor's infrared detector structure which characterized in that includes from bottom to top: the micro-bridge structure comprises a semiconductor substrate positioned on a first layer, a first conductive beam and a second conductive beam positioned on a second layer, and a micro-bridge deck positioned on a third layer; the first conductive beam and the second conductive beam are respectively provided with a first connecting end and a second connecting end, the lower surface of the first connecting end of the first conductive beam and the lower surface of the first connecting end of the second conductive beam are respectively connected with the upper surface of the semiconductor substrate through a first conductive supporting column, the upper surface of the second connecting end of the first conductive beam and the upper surface of the second connecting end of the second conductive beam are respectively connected with the lower surface of the bridge deck of the micro-bridge through a second conductive supporting column, wherein,
the first conductive beams are arranged in parallel side by side along a first direction relative to the second conductive beams, the first connection ends are arranged diagonally relative to the semiconductor substrate, and the second connection ends are arranged perpendicular to the first direction relative to the corresponding first connection ends.
2. The high fill factor infrared detector structure of claim 1, wherein the first and second conductive beams are located in an area below and within the microbridge deck.
3. The high fill factor infrared detector structure of claim 1, wherein the first and second conductive beams have a repeating turning structure in a horizontal direction.
4. The high fill factor infrared detector structure of claim 1, wherein the microbridge deck is provided with an infrared absorbing and sensitive layer for infrared sensing, the infrared absorbing and sensitive layer connecting the second conductive support pillars.
5. The high fill factor infrared detector structure of claim 4, wherein the infrared absorbing and sensing layer is connected to the second conductive support posts by a first metal electrode layer.
6. The high fill factor infrared detector structure of claim 5, wherein the surfaces of the infrared absorbing and sensing layer and the first metal electrode layer are covered with a release protective layer.
7. The high-fill-factor infrared detector structure of claim 5, wherein the first and second conductive beams are respectively provided with second metal electrode layers, and the second metal electrode layers are respectively connected with the first and second conductive support pillars.
8. The high-fill-factor infrared detector structure of claim 7, wherein the first conductive support pillar and the second conductive support pillar are respectively provided with a third metal electrode layer, and the first metal electrode layer, the second metal electrode layer and the third metal electrode layer are connected.
9. The high-fill-factor infrared detector structure of claim 8, wherein the surface of the second metal electrode layer is covered with a release protection layer, and the outside of the third metal electrode layer is covered with a dielectric layer.
10. The high fill factor infrared detector structure of claim 1, wherein the first and/or second conductive support posts are vertically upward column structures or obliquely upward conductive support beam structures.
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|---|---|---|---|---|
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