CN103922270A - Uncooled optical readout infrared focal plane array structure and manufacturing method - Google Patents
Uncooled optical readout infrared focal plane array structure and manufacturing method Download PDFInfo
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- CN103922270A CN103922270A CN201410172293.1A CN201410172293A CN103922270A CN 103922270 A CN103922270 A CN 103922270A CN 201410172293 A CN201410172293 A CN 201410172293A CN 103922270 A CN103922270 A CN 103922270A
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- 238000004519 manufacturing process Methods 0.000 title abstract description 13
- 230000003287 optical Effects 0.000 title abstract 4
- 229910052751 metal Inorganic materials 0.000 claims abstract description 62
- 239000002184 metal Substances 0.000 claims abstract description 62
- 238000002955 isolation Methods 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 229910021418 black silicon Inorganic materials 0.000 claims abstract description 17
- 238000010521 absorption reaction Methods 0.000 claims description 39
- 239000000463 material Substances 0.000 claims description 23
- 238000005057 refrigeration Methods 0.000 claims description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 11
- 229920005591 polysilicon Polymers 0.000 claims description 11
- 238000002360 preparation method Methods 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 7
- 241000935974 Paralichthys dentatus Species 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N Silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- 239000004411 aluminium Substances 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminum Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 238000010276 construction Methods 0.000 claims description 6
- 108060002965 flK Proteins 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 238000005452 bending Methods 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 230000000875 corresponding Effects 0.000 claims description 3
- 238000005755 formation reaction Methods 0.000 claims description 3
- RZVAJINKPMORJF-UHFFFAOYSA-N p-acetaminophenol Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 claims description 3
- 239000005297 pyrex Substances 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 5
- 230000035945 sensitivity Effects 0.000 abstract description 2
- 210000000078 Claw Anatomy 0.000 abstract 1
- 230000003014 reinforcing Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 10
- 230000004044 response Effects 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
Abstract
The invention discloses an uncooled optical readout infrared focal plane array structure and a manufacturing method. The uncooled optical readout infrared focal plane array structure comprises a transparent substrate and a metal reflective plate arranged on the substrate in a suspended mode, and the upper portion of the metal reflective plate is sequentially provided with an infrared absorbing medium layer and a black silicon infrared absorbing reinforcing layer; the left side and the right side of the metal reflective plate are symmetrically provided with multiple cantilevers and isolation beams at intervals, one end of the cantilever on the innermost side is connected with the infrared absorbing medium layer as a whole, the two ends of each isolation beam between the two cantilevers are connected between the two cantilevers respectively as a whole, and one end of the cantilever on the outermost side is bent downward and connected with the transparent substrate to form an anchor claw supporting structure. The uncooled optical readout infrared focal plane array structure is simple in process, can be compatible with later processes, besides, the black silicon medium layer is manufactured on an original infrared absorbing layer of an array detector so that infrared absorbing efficiency can be greatly improved, and accordingly responsivity and sensitivity of devices are greatly improved.
Description
Technical field
The present invention relates to a kind of non-refrigeration light and read infrared focal plane array structure and preparation method.
Background technology
The un-cooled infrared focal plane array of reading based on light, its INFRARED ABSORPTION efficiency is directly connected to signal response height, therefore, under the present situation that its infrared response is lower at present, in order to improve its response signal, all multi-methods in its INFRARED ABSORPTION, have been taked, such as: increase absorbed layer area, add resonator mode to improve the methods such as absorption, but these methods exist such as contradict with size of devices or sacrificial layer release process difficulty larger etc., make its DeGrain, and increased element manufacturing difficulty.
Summary of the invention
In order to overcome above-mentioned defect, the invention provides a kind of non-refrigeration light and read infrared focal plane array structure and preparation method, the INFRARED ABSORPTION efficiency of can significantly deducting a percentage, and manufacture craft is simple.
The present invention for the technical scheme that solves its technical problem and adopt is: a kind of non-refrigeration light is read infrared focal plane array structure, comprise transparent substrates, the unsettled metal reflective plate that arranges in described transparent substrates, this metal reflective plate top is disposed with INFRARED ABSORPTION dielectric layer and black silicon INFRARED ABSORPTION enhancement layer, interval, the left and right sides at described metal reflective plate is symmetrically arranged with some cantilever beams and isolation beams, the cantilever beam of described each side of metal reflective plate and isolation beams is interspersed and occur in pairs, being positioned at cantilever beam one end and the described INFRARED ABSORPTION dielectric layer of inner side is connected to form one, the other end that the other end of the isolation beams between two cantilever beams bends inwards with the cantilever beam of inner side is connected to form one and one end outward of this cantilever beam and the cantilever beam one end in outside are connected to form one, being positioned at the bending downwards of outermost cantilever beam one end is connected to and in described transparent substrates, forms anchor fluke supporting construction.
As a further improvement on the present invention, described cantilever beam is two Material Cantilever Beam, and this cantilever beam consists of with the second layer metal layer that is positioned at top the ground floor dielectric layer that is positioned at below.
As a further improvement on the present invention, the ground floor dielectric layer of described isolation beams and described cantilever beam is connected to form one.
As a further improvement on the present invention, described ground floor dielectric layer is that silicon nitride and the one kind of material of silica are made, and described second layer metal layer is that gold and the one kind of material of aluminium are made.
As a further improvement on the present invention, described transparent substrates is that pyrex and quartzy one kind of material are made.
As a further improvement on the present invention, described metal reflective plate is that gold and the one kind of material of aluminium are made.
As a further improvement on the present invention, described INFRARED ABSORPTION dielectric layer is made by silicon nitride and the one kind of material of silica.
As a further improvement on the present invention, described black silicon INFRARED ABSORPTION enhancement layer is that silicon layer by deposit forms through SF6 gas etch.
The present invention also provides a kind of non-refrigeration light as above to read the preparation method of infrared focal plane array structure, comprises the following steps:
1. deposit one deck sacrifice layer in a transparent substrates;
2. deposit layer of metal thin layer on described sacrifice layer;
3. the figure of needs is transferred on described metal film layer, the metal film layer being positioned on sacrifice layer core retains formation metal reflective plate, and the metal film layer that is positioned at sacrifice layer marginal portion is etched away corresponding sacrifice layer is exposed;
4. on the described sacrifice layer exposing, etch through hole;
5. deposit one deck dielectric film layer respectively above described metal reflective plate and the sacrifice layer that exposes and in described through hole;
6. the figure of needs is transferred on described dielectric film layer, the part dielectric film layer of the dielectric film layer in described through hole and its connection forms the isolation beams with anchor fluke supporting construction, at the part dielectric film layer above described sacrifice layer, form respectively ground floor dielectric layer and some isolation beams between two cantilever beams of some cantilever beams, the dielectric film layer that is positioned at described metal reflective plate top forms INFRARED ABSORPTION dielectric layer;
7. deposit second layer metal thin layer above the ground floor dielectric layer of described cantilever beam, and by mask etch, obtain the second layer metal layer of cantilever beam;
8. depositing polysilicon layer above the INFRARED ABSORPTION dielectric layer of described metal reflective plate;
9. described polysilicon layer is converted to the black silicon INFRARED ABSORPTION enhancement layer with nanoforest structure;
10. described sacrifice layer is all discharged, obtain non-refrigeration light and read infrared focal plane array structure.
As a further improvement on the present invention, in described step 3., by mask plate etching, the figure of needs is transferred on described metal film layer; In described step 6., by mask plate etching, the figure of needs is transferred on described dielectric film layer; In described step 9., by mask etch, described polysilicon layer is converted to the black silicon INFRARED ABSORPTION enhancement layer with nanoforest structure.
The invention has the beneficial effects as follows: this non-refrigeration light is read infrared focal plane array structure and preparation method, adopt transparent substrates as the substrate of device, then realize on this basis making of two Material Cantilever Beam structures, and last depositing polysilicon above original infrared absorption layer, then adopt etching method to realize black silicon structure INFRARED ABSORPTION enhancement layer, finally realize the making of whole device, not only technique is simple, can later stage process compatible, and by make black silicon dielectric layer on the original infrared absorption layer of detector array, can significantly strengthen INFRARED ABSORPTION efficiency, thereby increase substantially responsiveness and the sensitivity of device.
Accompanying drawing explanation
Fig. 1 is one of manufacturing process schematic diagram of the present invention;
Fig. 2 is two of manufacturing process schematic diagram of the present invention;
Fig. 3 is three of manufacturing process schematic diagram of the present invention;
Fig. 4 is four of manufacturing process schematic diagram of the present invention;
Fig. 5 is five of manufacturing process schematic diagram of the present invention;
Fig. 6 is six of manufacturing process schematic diagram of the present invention;
Fig. 7 is seven of manufacturing process schematic diagram of the present invention;
Fig. 8 is eight of manufacturing process schematic diagram of the present invention;
Fig. 9 is nine of manufacturing process schematic diagram of the present invention;
Figure 10 is the infrared focal plane array structural profile structural representation that the present invention makes;
Figure 11 is infrared focal plane array structural upright schematic diagram of the present invention.
By reference to the accompanying drawings, make the following instructions:
1---transparent substrates 11---metal reflective plate
12---INFRARED ABSORPTION dielectric layer 13---black silicon INFRARED ABSORPTION enhancement layer
14---cantilever beam 15---isolation beams
141---ground floor dielectric layer 142---second layer metal layer
2---sacrifice layer 3---metal film layer
4---through hole 5---dielectric film layer
6---second layer metal thin layer 7---polysilicon layer
The specific embodiment
By reference to the accompanying drawings, the present invention is elaborated, but protection scope of the present invention is not limited to following embodiment, the simple equivalence of in every case being done with the present patent application the scope of the claims and description changes and modifies, within all still belonging to patent covering scope of the present invention.
As shown in Figure 10,11, a kind of non-refrigeration light is read infrared focal plane array structure, comprise transparent substrates 1, the unsettled metal reflective plate 11 that arranges in this transparent substrates, this metal reflective plate top is disposed with INFRARED ABSORPTION dielectric layer 12 and black silicon INFRARED ABSORPTION enhancement layer 13, at the interval, the left and right sides of metal reflective plate, be symmetrically arranged with some cantilever beams 14 and isolation beams 15, the cantilever beam of each side of metal reflective plate and isolation beams is interspersed and occur in pairs, being positioned at cantilever beam one end and the INFRARED ABSORPTION dielectric layer of inner side is connected to form one, the other end that the other end of the isolation beams between two cantilever beams bends inwards with the cantilever beam of inner side is connected to form one and one end outward of this cantilever beam and the cantilever beam one end in outside are connected to form one, being positioned at the bending downwards of outermost cantilever beam one end is connected to and in transparent substrates, forms anchor fluke supporting construction.
Preferably, described cantilever beam is two Material Cantilever Beam, and this cantilever beam consists of with the second layer metal layer 142 that is positioned at top the ground floor dielectric layer 141 that is positioned at below.
Preferably, the ground floor dielectric layer of described isolation beams and described cantilever beam is connected to form one.
Preferably, described ground floor dielectric layer is that silicon nitride and the one kind of material of silica are made or other have the dielectric material of higher absorption rate to infrared band, described second layer metal layer is material golden and that the one kind of material of aluminium is made or other are higher to visible reflectance, the thermal coefficient of expansion of the material of the material of this second layer metal layer and ground floor dielectric layer differs larger, thereby when temperature change, it introduces the larger displacement of cantilever beam because thermal expansion stress is different, realize reflector compared with the deflection of wide-angle.
Preferably, described transparent substrates is that pyrex and quartzy one kind of material are made.
Preferably, described metal reflective plate is that gold and the one kind of material of aluminium are made, or other materials higher to visible reflectance.
Preferably, described INFRARED ABSORPTION dielectric layer is made by silicon nitride and the one kind of material of silica, or other have the dielectric material of higher absorption rate to infrared band.
Preferably, described black silicon INFRARED ABSORPTION enhancement layer is that silicon layer by deposit forms through SF6 gas etch.
Non-refrigeration light as above is read a preparation method for infrared focal plane array structure, comprises the following steps:
1. deposit one deck sacrifice layer 2 in a transparent substrates 1, as Fig. 1;
2. deposit layer of metal thin layer 3 on described sacrifice layer, is used as the structure reflecting layer of device, as Fig. 2;
3. the figure of needs is transferred on described metal film layer, the metal film layer being positioned on sacrifice layer core retains formation metal reflective plate 11, and the metal film layer that is positioned at sacrifice layer marginal portion is etched away corresponding sacrifice layer is exposed, as Fig. 3;
4. on the described sacrifice layer exposing, etch through hole 4, as Fig. 4;
5. deposit one deck dielectric film layer 5 respectively above described metal reflective plate and the sacrifice layer that exposes and in described through hole, as Fig. 5;
6. the figure of needs is transferred on described dielectric film layer, the part dielectric film layer of the dielectric film layer in described through hole and its connection forms the isolation beams 15 with anchor fluke supporting construction, at the part dielectric film layer above described sacrifice layer, form respectively ground floor dielectric layer 141 and some isolation beams 15 between two cantilever beams of some cantilever beams 14, the dielectric film layer that is positioned at described metal reflective plate top forms INFRARED ABSORPTION dielectric layer 12, as Fig. 6;
7. deposit second layer metal thin layer 6 above the ground floor dielectric layer of described cantilever beam, and by mask etch, obtain the second layer metal layer 142 of cantilever beam, as Fig. 7;
8. depositing polysilicon layer 7 above the INFRARED ABSORPTION dielectric layer of described metal reflective plate, as Fig. 8;
9. described polysilicon layer is converted to the black silicon INFRARED ABSORPTION enhancement layer 13 with nanoforest structure, as Fig. 9;
10. described sacrifice layer is all discharged, obtain non-refrigeration light and read infrared focal plane array structure, as Figure 10, Figure 11 is its perspective view.
Preferably, in described step 3., by mask plate etching, the figure of needs is transferred on described metal film layer; In described step 6., by mask plate etching, the figure of needs is transferred on described dielectric film layer; In described step 9., by mask etch, described polysilicon layer is converted to the black silicon INFRARED ABSORPTION enhancement layer 13 with nanoforest structure.
Claims (10)
1. a non-refrigeration light is read infrared focal plane array structure, comprise transparent substrates (1), it is characterized in that: the unsettled metal reflective plate (11) that arranges in described transparent substrates, this metal reflective plate top is disposed with INFRARED ABSORPTION dielectric layer (12) and black silicon INFRARED ABSORPTION enhancement layer (13), at the interval, the left and right sides of described metal reflective plate, be symmetrically arranged with some cantilever beams (14) and isolation beams (15), the cantilever beam of described each side of metal reflective plate and isolation beams is interspersed and occur in pairs, being positioned at cantilever beam one end and the described INFRARED ABSORPTION dielectric layer of inner side is connected to form one, the other end that the other end of the isolation beams between two cantilever beams bends inwards with the cantilever beam of inner side is connected to form one and one end outward of this cantilever beam and the cantilever beam one end in outside are connected to form one, being positioned at the bending downwards of outermost cantilever beam one end is connected to and in described transparent substrates, forms anchor fluke supporting construction.
2. non-refrigeration light according to claim 1 is read infrared focal plane array structure, it is characterized in that: described cantilever beam is two Material Cantilever Beam, and the second layer metal layer (142) of this cantilever beam by the ground floor dielectric layer (141) below being positioned at and above being positioned at forms.
3. non-refrigeration light according to claim 2 is read infrared focal plane array structure, it is characterized in that: the ground floor dielectric layer of described isolation beams and described cantilever beam is connected to form one.
4. non-refrigeration light according to claim 2 is read infrared focal plane array structure, it is characterized in that: described ground floor dielectric layer is that silicon nitride and the one kind of material of silica are made, and described second layer metal layer is that gold and the one kind of material of aluminium are made.
5. non-refrigeration light according to claim 1 is read infrared focal plane array structure, it is characterized in that: described transparent substrates is that pyrex and quartzy one kind of material are made.
6. non-refrigeration light according to claim 1 is read infrared focal plane array structure, it is characterized in that: described metal reflective plate is that gold and the one kind of material of aluminium are made.
7. non-refrigeration light according to claim 1 is read infrared focal plane array structure, it is characterized in that: described INFRARED ABSORPTION dielectric layer is made by silicon nitride and the one kind of material of silica.
8. non-refrigeration light according to claim 1 is read infrared focal plane array structure, it is characterized in that: described black silicon INFRARED ABSORPTION enhancement layer is that the silicon layer by deposit forms through SF6 gas etch.
9. the non-refrigeration light as described in any one in claim 1-8 is read a preparation method for infrared focal plane array structure, it is characterized in that, comprises the following steps:
1. at the upper deposit one deck sacrifice layer (2) of a transparent substrates (1);
2. deposit layer of metal thin layer (3) on described sacrifice layer;
3. the figure of needs is transferred on described metal film layer, the metal film layer being positioned on sacrifice layer core retains formation metal reflective plate (11), and the metal film layer that is positioned at sacrifice layer marginal portion is etched away corresponding sacrifice layer is exposed;
4. on the described sacrifice layer exposing, etch through hole (4);
5. deposit one deck dielectric film layer (5) respectively above described metal reflective plate and the sacrifice layer that exposes and in described through hole;
6. the figure of needs is transferred on described dielectric film layer, the part dielectric film layer of the dielectric film layer in described through hole and its connection forms the isolation beams (15) with anchor fluke supporting construction, the part dielectric film layer that is positioned at described sacrifice layer top forms respectively ground floor dielectric layer (141) and some isolation beams (15) between two cantilever beams of some cantilever beams (14), and the dielectric film layer that is positioned at described metal reflective plate top forms INFRARED ABSORPTION dielectric layer (12);
7. deposit second layer metal thin layer (6) above the ground floor dielectric layer of described cantilever beam, and by mask etch, obtain the second layer metal layer (142) of cantilever beam;
8. depositing polysilicon layer (7) above the INFRARED ABSORPTION dielectric layer of described metal reflective plate;
9. described polysilicon layer is converted to the black silicon INFRARED ABSORPTION enhancement layer (13) with nanoforest structure;
10. described sacrifice layer is all discharged, obtain non-refrigeration light and read infrared focal plane array structure.
10. non-refrigeration light according to claim 9 is read the preparation method of infrared focal plane array structure, it is characterized in that: in described step 3., by mask plate etching, the figure of needs is transferred on described metal film layer; In described step 6., by mask plate etching, the figure of needs is transferred on described dielectric film layer; In described step 9., by mask etch, described polysilicon layer is converted to the black silicon INFRARED ABSORPTION enhancement layer (13) with nanoforest structure.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104913852A (en) * | 2015-06-18 | 2015-09-16 | 中国科学院上海微系统与信息技术研究所 | Bonding technology-based optical readout infrared detector array manufacturing method |
| CN105486412A (en) * | 2015-12-31 | 2016-04-13 | 武汉高芯科技有限公司 | Uncooled infrared focal plane array detector with overlap vertical bridge legs |
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