CN110359017A - 一种半导体基材的表面处理方法 - Google Patents
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Abstract
本发明涉及半导体技术领域,公开了一种半导体基材的表面处理方法,首先采用超声波对半导体基材进行预清洗,以清除半导体基材表面的污迹,然后采用离子束刻蚀预清洗后的半导体基材,以提高半导体基材表面的清洁度,再采用磁控溅射在刻蚀后的半导体基材上沉积硅过渡层,以提高后续工序中类金刚石膜与半导体基材之间的结合性能,接着在沉积硅过渡层后的半导体基材上沉积类金刚石膜,以获得均匀致密的覆盖层,最后在沉积类金刚石膜后的半导体基材上掺杂氟,以提高半导体基材的疏水疏油性,从而避免水汽、液体、油污等积聚在半导体基材的表面,从而改善半导体的性能。
Description
技术领域
本发明涉及半导体技术领域,特别是涉及一种半导体基材的表面处理方法。
背景技术
半导体基材用于承载半导体,其表面的清洁程度影响半导体的性能。目前,一般通过清水清洗半导体基材,但是这种清洗方法只能暂时清洁半导体基材,由于现有的半导体基材一般具有较大的表面张力以及较好的亲水性,因此导致使用上述清洗方法后的半导体基材仍然容易受到水汽、液体、油污等的影响,从而影响半导体的性能。
发明内容
本发明的目的是提供一种半导体基材的表面处理方法,其能够提高半导体基材的疏水疏油性,以避免水汽、液体、油污等积聚在半导体基材的表面,从而改善半导体的性能。
为了解决上述技术问题,本发明提供一种半导体基材的表面处理方法,包括以下步骤:
采用超声波对半导体基材进行预清洗,预清洗时间为20分钟;其中,采用异丙醇作为清洗溶剂;
采用离子束刻蚀预清洗后的所述半导体基材;
采用磁控溅射在刻蚀后的所述半导体基材上沉积硅过渡层;其中,靶材为高纯度的硅靶材,过渡层厚度为
采用磁过滤真空阴极电弧法在沉积所述硅过渡层后的所述半导体基材上沉积类金刚石膜;
采用射频化学气相沉积在所述类金刚石膜上掺杂氟,以四氟化碳为掺杂气体,流量为80sccm,掺杂时间为15min。
作为优选方案,所述采用磁过滤真空阴极电弧法在刻蚀后的所述半导体基材上沉积类金刚石膜,具体包括以下步骤:
采用高纯度的石墨靶材,在沉积过程中以预定速度旋转所述半导体基材,在阳极施加范围是-70V到-120V的偏压。
作为优选方案,所述采用离子束刻蚀预清洗后的所述半导体基材,具体包括以下步骤:
在氩气气氛下,利用产生的氩离子束刻蚀所述半导体基材,所述氩离子束的入射角度的范围为30-45°,所述半导体基材的转速为30r/s,刻蚀速率约为
作为优选方案,在所述采用磁控溅射在刻蚀后的所述半导体基材上沉积硅过渡层之前,还包括以下步骤:
溅射所述硅靶材100秒,以使所述硅靶材产生的硅离子束稳定。
作为优选方案,所述采用超声波对半导体基材进行预清洗还包括以下步骤:
在超声波预清洗结束后,将所述半导体基材自然干燥,干燥时间为1小时。
本发明提供一种半导体基材的表面处理方法,首先采用超声波对半导体基材进行预清洗,以清除半导体基材表面的污迹,然后采用离子束刻蚀预清洗后的半导体基材,以提高半导体基材表面的清洁度,再采用磁控溅射在刻蚀后的半导体基材上沉积硅过渡层,以提高后续工序中类金刚石膜与半导体基材之间的结合性能,接着在沉积硅过渡层后的半导体基材上沉积类金刚石膜,以获得均匀致密的覆盖层,最后在沉积类金刚石膜后的半导体基材上掺杂氟,以提高半导体基材的疏水疏油性,从而避免水汽、液体、油污等积聚在半导体基材的表面,从而改善半导体的性能。
附图说明
图1是本发明实施例中的半导体基材的表面处理方法的流程图;
具体实施方式
下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。
参见图1所示,本发明优选实施例的一种半导体基材的表面处理方法,包括以下步骤:
S11,采用超声波对半导体基材进行预清洗,预清洗时间为20分钟;其中,采用异丙醇作为清洗溶剂;
S12,采用离子束刻蚀预清洗后的所述半导体基材;
S13,采用磁控溅射在刻蚀后的所述半导体基材上沉积硅过渡层;其中,靶材为高纯度的硅靶材,过渡层厚度为
S14,采用磁过滤真空阴极电弧法在沉积所述硅过渡层后的所述半导体基材上沉积类金刚石膜;
S15,采用射频化学气相沉积在所述类金刚石膜上掺杂氟,以四氟化碳为掺杂气体,流量为80sccm,掺杂时间为15min。
本发明提供一种半导体基材的表面处理方法,首先采用超声波对半导体基材进行预清洗,以清除半导体基材表面的污迹,然后采用离子束刻蚀预清洗后的半导体基材,以提高半导体基材表面的清洁度,再采用磁控溅射在刻蚀后的半导体基材上沉积硅过渡层,以提高后续工序中类金刚石膜与半导体基材之间的结合性能,接着在沉积硅过渡层后的半导体基材上沉积类金刚石膜,以获得均匀致密的覆盖层,最后在沉积类金刚石膜后的半导体基材上掺杂氟,以提高半导体基材的疏水疏油性,从而避免水汽、液体、油污等积聚在半导体基材的表面,从而改善半导体的性能。
在本发明实施例中,所述采用磁过滤真空阴极电弧法在刻蚀后的所述半导体基材上沉积类金刚石膜,具体包括以下步骤:
采用高纯度的石墨靶材,在沉积过程中以预定速度旋转所述半导体基材,在阳极施加范围是-70V到-120V的偏压。
在本发明实施例中,通过在沉积过程中以预定速度旋转所述半导体基材,在阳极施加范围是-70V到-120V的偏压,以获得更多的sp3含量,从而提高类金刚石膜的硬度。
在本发明实施例中,所述采用离子束刻蚀预清洗后的所述半导体基材,具体包括以下步骤:
在氩气气氛下,利用产生的氩离子束刻蚀所述半导体基材,所述氩离子束的入射角度的范围优选为30-45°,所述半导体基材的转速优选为30r/s,刻蚀速率约优选为
在本发明实施例中,在所述采用磁控溅射在刻蚀后的所述半导体基材上沉积硅过渡层之前,还包括以下步骤:
溅射所述硅靶材100秒,以使所述硅靶材产生的硅离子束稳定。
在本发明实施例中,通过在刻蚀后的所述半导体基材上沉积硅过渡层之前溅射所述硅靶材100秒,以使所述硅靶材产生的硅离子束稳定,从而使得在刻蚀后的所述半导体基材上沉积的硅过渡层覆盖均匀和致密,以进一步提高后续工序中类金刚石膜与所述半导体基材之间的结合性能。
在本发明实施例中,所述采用超声波对半导体基材进行预清洗还包括以下步骤:
在超声波预清洗结束后,将所述半导体基材自然干燥,干燥时间为1小时。
本发明提供一种半导体基材的表面处理方法,首先采用超声波对半导体基材进行预清洗,以清除半导体基材表面的污迹,然后采用离子束刻蚀预清洗后的半导体基材,以提高半导体基材表面的清洁度,再采用磁控溅射在刻蚀后的半导体基材上沉积硅过渡层,以提高后续工序中类金刚石膜与半导体基材之间的结合性能,接着在沉积硅过渡层后的半导体基材上沉积类金刚石膜,以获得均匀致密的覆盖层,最后在沉积类金刚石膜后的半导体基材上掺杂氟,以提高半导体基材的疏水疏油性,从而避免水汽、液体、油污等积聚在半导体基材的表面,从而改善半导体的性能。
以上所述仅是本发明的优选实施方式,应当指出,对于本技术领域的普通技术人员来说,在不脱离本发明技术原理的前提下,还可以做出若干改进和替换,这些改进和替换也应视为本发明的保护范围。
Claims (5)
1.一种半导体基材的表面处理方法,其特征在于,包括以下步骤:
采用超声波对半导体基材进行预清洗,预清洗时间为20分钟;其中,采用异丙醇作为清洗溶剂;
采用离子束刻蚀预清洗后的所述半导体基材;
采用磁控溅射在刻蚀后的所述半导体基材上沉积硅过渡层;其中,靶材为高纯度的硅靶材,过渡层厚度为
采用磁过滤真空阴极电弧法在沉积所述硅过渡层后的所述半导体基材上沉积类金刚石膜;
采用射频化学气相沉积在所述类金刚石膜上掺杂氟,以四氟化碳为掺杂气体,流量为80sccm,掺杂时间为15min。
2.如权利要求1所述的半导体基材的表面处理方法,其特征在于,所述采用磁过滤真空阴极电弧法在沉积所述硅过渡层后的所述半导体基材上沉积类金刚石膜,具体包括以下步骤:
采用高纯度的石墨靶材,在沉积过程中以预定速度旋转所述半导体基材,在阳极施加范围是-70V到-120V的偏压。
3.如权利要求1所述的半导体基材的表面处理方法,其特征在于,所述采用离子束刻蚀预清洗后的所述半导体基材,具体包括以下步骤:
在氩气气氛下,利用产生的氩离子束刻蚀所述半导体基材,所述氩离子束的入射角度的范围为30-45°,所述半导体基材的转速为30r/s,刻蚀速率约为
4.如权利要求1-3任一项所述的半导体基材的表面处理方法,其特征在于,在所述采用磁控溅射在刻蚀后的所述半导体基材上沉积硅过渡层之前,还包括以下步骤:
溅射所述硅靶材100秒,以使所述硅靶材产生的硅离子束稳定。
5.如权利要求1-3任一项所述的半导体基材的表面处理方法,其特征在于,所述采用超声波对半导体基材进行预清洗还包括以下步骤:
在超声波预清洗结束后,将所述半导体基材自然干燥,干燥时间为1小时。
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CN113278912A (zh) * | 2021-05-13 | 2021-08-20 | 哈尔滨工业大学 | 一种硅终端金刚石表面的制备方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20160333186A1 (en) * | 2015-05-15 | 2016-11-17 | Sae Magnetics (H.K.) Ltd. | Article coated with dlc and manufacturing method thereof |
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CN106282935A (zh) * | 2015-05-15 | 2017-01-04 | 新科实业有限公司 | 具有类金刚石涂层的材料及其制备方法 |
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CN113278912A (zh) * | 2021-05-13 | 2021-08-20 | 哈尔滨工业大学 | 一种硅终端金刚石表面的制备方法 |
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