CN117995783A - 半导体基底结构 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 45
- 239000000758 substrate Substances 0.000 title claims abstract description 37
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 40
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 40
- -1 fluoride ions Chemical class 0.000 claims abstract description 21
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims abstract description 18
- 229910052731 fluorine Inorganic materials 0.000 claims description 14
- 239000011737 fluorine Substances 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 5
- 239000010410 layer Substances 0.000 abstract description 71
- 239000000853 adhesive Substances 0.000 abstract description 5
- 230000001070 adhesive effect Effects 0.000 abstract description 5
- 239000002344 surface layer Substances 0.000 abstract description 5
- 238000004140 cleaning Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 3
- 238000004506 ultrasonic cleaning Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000010849 ion bombardment Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 230000008685 targeting Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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Abstract
本发明的半导体基底结构，包括：半导体基底；位于所述半导体基底之上的类金刚石碳层；位于所述类金刚石碳层之上的掺杂层，所述掺杂层包括类金刚石碳和氟离子；以及位于所述掺杂层上的氟离子层。该半导体基底的表面层体具有良好附着力、高硬度、高耐磨性以及较低表面能量，从而获得稳定的表面性能。
Description
技术领域
本发明涉及半导体域，尤其涉及一种半导体基底结构。
背景技术
在半导体制造中，半导体的表面处理通常使用硅、碳或者是类金刚石碳(DLC)。例如，为了提高表面硬度和耐磨性，半导体基底的表面通常形成DLC保护层。但是，传统的半导体基底表面处理往往为了保证高硬度高耐磨而忽略了表面能量积聚的问题，表面能量积聚的能量越高，造成的产品性能越不稳定。
因此，有必要提供一种改进的半导体基底结构以上缺陷。
发明内容
本发明的目的在于提供一种半导体基底结构，该半导体基底的表面层体具有良好附着力、高硬度、高耐磨性以及较低表面能量，从而获得稳定的表面性能。
为实现上述目的，本发明的半导体基底结构，包括：
半导体基底；
位于所述半导体基底之上的类金刚石碳层；
位于所述类金刚石碳层之上的掺杂层，所述掺杂层包括类金刚石碳和氟离子；以及
位于所述掺杂层之上的氟离子层。
与现有技术相比，本发明首先在半导体基底上形成类金刚石碳层，再在其上掺杂氟离子形成包括类金刚石碳和氟离子的掺杂层，继而，在掺杂层上形成氟离子层，也就是说，从外到内，半导体基底的表面层体依次是氟离子层、掺杂层(氟离子+类金刚石碳)、类金刚石碳层，该层体具有良好附着力、高硬度、高耐磨性，尤其是氟离子层以及掺杂层具有较低的表面能量，从而使表面更稳定，性能更佳。
较佳地，所述类金刚石碳层的厚度为12-30nm。
较佳地，所述掺杂层的厚度为2-6nm。
较佳地，所述氟离子层的厚度为1-3nm。
类金刚石碳层的层体厚度最大以保持优良的高硬度高耐磨性，而掺杂层均匀分布有类金刚石碳和氟离子，结合在掺杂有两种物质的掺杂层上继续形成的氟离子层使表面能量较低。
较佳地，所述类金刚石碳层通过FCVA方法沉积形成。
较佳地，所述掺杂层通过IBE/ECR将氟离子掺杂扩散到所述类金刚石碳层而成。
附图说明
图1本发明半导体基底结构的一个实施例的示意图。
具体实施方式
下面结合实施例对本发明半导体基底结构作进一步说明，但不因此限制本发明。本发明的方法旨在提供一种半导体基底结构，其表面层体具有良好附着力、高硬度、高耐磨性以及较低表面能量，从而获得稳定的表面性能。
如图1所示，本发明的半导体基底结构100包括半导体基底110、类金刚石碳层120、掺杂层130及氟离子层140。需注意的是，本发明的半导体基底110并不限制，其可以是适于半导体的金属基底或金属合金基底等。具体地，该类金刚石碳层120位于半导体基底110上。掺杂层130从类金刚石碳层120上掺杂并扩散从而包括类金刚石碳和氟离子，即掺杂层中的类金刚石碳和氟离子均匀扩散不会出现分层状态。氟离子层140形成在掺杂层130上。
下面介绍本发明半导体基底结构的形成流程。
首先，对半导体基底进行超声波预清洗，将半导体基底置于真空室进行局部抽真空及加热并采用离子轰击清洗；继而，在半导体基底上沉积形成类金刚石碳层；继而，在类金刚石碳层上掺杂氟离子形成包含类金刚石碳和氟离子的掺杂层，继续沉积氟离子以在掺杂层上形成氟离子层。
具体地，在超声波预清洗中，使用NMP溶剂进行超声波清洗，清洗温度为20-40，清洗时间为20-30分钟；继而，使用去离子水冲洗；再使用IPA溶剂进行超声波清洗，清洗温度为45-50度，清洗时间为20-30分钟。超声波清洗结束后，将半导体基底干燥并置于真空室，进行局部抽真空及加热并采用离子轰击清洗。继而，以10ml/min通入氩气并控制真空室的气压为5-8Pa，工作偏压为-1000V至-1200V，对真空室的基体表面进行轰击清洗。继而，通过FCVA(过滤阴极真空电弧)方式沉积DLC层，标靶是高纯度的碳靶，厚度为12-30nm。接着，在DLC层上掺杂氟离子形成包含类金刚石碳和氟离子的掺杂层。在该步骤中，氟元素通过IBE(离子束刻蚀)或ECR(电子回旋共振等离子体)方式掺杂到DLC层中。采用CF4气体，以用于射频源产生等离子体。氟离子扩散到DLC层，与碳形成化学键。具体地，控制真空室温度200-250℃，气压为0.1-0.3Pa，沉积时间80-100min，沉积掺杂层的厚度为2-6nm。在该层体中，氟离子和部分DLC掺杂在一起，具有很强的化学键以提高层体性能。接着，采用CF4气体继续沉积形成不掺杂DLC的氟离子层，使得表面最外层以一定厚度的氟离子层的形式存在，氟离子层和掺杂层具有较低的表面能量。
由此可见，本发明首先在半导体基底上形成类金刚石碳层，再在其上掺杂氟离子形成包括类金刚石碳和氟离子的掺杂层，继而，在掺杂层上形成氟离子层，也就是说，从外到内，半导体基底的表面层体依次是氟离子层、掺杂层(氟离子+类金刚石碳)、类金刚石碳层，该层体具有良好附着力、高硬度、高耐磨性，尤其是氟离子层以及掺杂层具有较低的表面能量，从而使表面更稳定，性能更佳。
以上所揭露的仅为本发明的较佳实施例而已，当然不能以此来限定本发明之权利范围，因此依本发明申请专利范围所作的等同变化，仍属本发明所涵盖的范围。
Claims (6)
1.一种半导体基底结构，包括：
半导体基底；
位于所述半导体基底之上的类金刚石碳层；
位于所述类金刚石碳层之上的掺杂层，所述掺杂层包括类金刚石碳和氟离子；以及
在所述掺杂层上的氟离子层。
2.如权利要求1所述的半导体基底结构，其特征在于：所述类金刚石碳层的厚度为12-30nm。
3.如权利要求1所述的半导体基底结构，其特征在于：所述掺杂层的厚度为2-6nm。
4.如权利要求1所述的半导体基底结构，其特征在于：所述氟离子层的厚度为1-3nm。
5.如权利要求1所述的半导体基底结构，其特征在于：所述类金刚石碳层通过FCVA方法沉积形成。
6.如权利要求1所述的半导体基底结构，其特征在于：所述掺杂层通过IBE/ECR将氟离子掺杂扩散到所述类金刚石碳层而成。
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