CN110358454A - A kind of general chemistry machine polishing liquor - Google Patents
A kind of general chemistry machine polishing liquor Download PDFInfo
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- CN110358454A CN110358454A CN201910658529.5A CN201910658529A CN110358454A CN 110358454 A CN110358454 A CN 110358454A CN 201910658529 A CN201910658529 A CN 201910658529A CN 110358454 A CN110358454 A CN 110358454A
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- China
- Prior art keywords
- polishing
- chemical mechanical
- mechanical polishing
- sodium metasilicate
- deionized water
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
A kind of general chemistry machine polishing liquor, belongs to superhard material Ultra-precision Turning field, and ingredient includes zirconia, sodium metasilicate analytical reagents, deionized water.At room temperature, by abrasive material zirconium oxide, sodium metasilicate, be separately added into deionized water, shaken 5 minutes in ultrasonic device and obtain chemical mechanical polishing liquid.In the polishing fluid, zirconium oxide concentration is 0.05~0.09g/ml, and partial size is 0.05~0.2 μm, and the sodium silicate silicate is 0.05~0.12g/ml.The chemical mechanical polishing liquid has versatility, can be used in polishing sapphire crystal, quartz, diamond, silicon wafer, tungsten alloy material.Compared to traditional polishing fluid, plane of crystal roughness is reduced, not damaged defect.And the novel polishing liquid is low in cost, synthesizes without special process, and all components not will cause environmental pollution.
Description
Technical field
The invention belongs to superhard material Ultra-precision Turning fields, are related to matching for the general chemistry machine polishing liquor of multiple material
System, is related specifically to sapphire crystal, quartz, diamond, silicon wafer, the preparation of the chemical mechanical polishing liquid of tungsten alloy material.
Background technique
With the development of science and technology, society is higher and higher to the surface quality requirements of a variety of materials.Sapphire crystal, quartz,
Diamond, silicon wafer, tungsten alloy material is due to respective unique physical and chemical performance, in aerospace, national defence, processing and manufacturing field
There is important role.Chemically mechanical polishing is as a kind of unique Ultraprecision Machining for being able to achieve global planarizartion, extensively
Applied in the final processing technology of material.
A kind of polishing fluid of patent 201910250862.2 invention is zirconia, sodium metasilicate, the mixing water of magnesia
Solution, but the polishing fluid must be using magnesia as a part of chemical reaction reagent, and the polishing fluid is only applicable to yttroalumite
Garnet crystal material.109251679 A of patent CN has invented a kind of comprising cerium oxide abrasives, the change of oligosaccharide and PH regulator
Machine polishing liquor is learned, but the invention is only applicable to the chemically mechanical polishing of quartz.Presently, there are chemical mechanical polishing liquid it is all main
To be suitable for the chemically mechanical polishing of homogenous material, not have versatility.Therefore, novel general chemistry machine polishing liquor is studied
It is the effective way for solving problem above.
Summary of the invention
The problems such as to solve chemical mechanical polishing liquid poor universality, removal rate is low, and quality of finish is limited to, the present invention provide one
The novel chemical mechanical polishing liquid of kind can be used in polishing sapphire crystal, quartz, diamond, silicon wafer, tungsten alloy material etc.,
With versatility.
The technical solution adopted by the present invention are as follows:
A kind of general chemistry machine polishing liquor, ingredient include zirconia, sodium metasilicate analytical reagents, deionization
Water.At room temperature, by abrasive material zirconium oxide, sodium metasilicate, be separately added into deionized water, shaken 5 minutes in ultrasonic device and obtain chemistry
Machine polishing liquor.In the chemical mechanical polishing liquid, zirconium oxide concentration is 0.05~0.09g/ml, and partial size is 0.05~0.2 μm,
The sodium silicate silicate is 0.05~0.12g/ml.The general chemistry machine polishing liquor can be used in polishing sapphire crystal,
Quartz, diamond, silicon wafer, tungsten alloy material.
One kind for polishing sapphire crystal, quartz, diamond, silicon wafer, tungsten alloy material cmp method,
It comprises the steps of:
The first step prepares chemical mechanical polishing liquid；
At room temperature, abrasive material sodium metasilicate analytical reagents, zirconia are separately added into deionized water, in ultrasonic device
Concussion obtains chemical mechanical polishing liquid in 5 minutes.
Second step, using polyurethane polishing pad or glass plate as polishing pad for chemomechanical polishing (disk)；
Third step chemically-mechanicapolish polishes sapphire crystal, quartz, diamond, silicon wafer, tungsten alloy material respectively,
Sapphire crystal surface roughness is 0.538nm, quartz surfaces roughness 0.572nm, diamond surface roughness after processing
0.623nm, silicon chip surface roughness 0.412nm, tungsten alloy surface roughness 0.862nm.
Effect and benefit of the present invention is: polishing sapphire crystal, quartz, gold using new chemical mechanical polishing liquid of the present invention
Hard rock, silicon wafer, tungsten alloy material.1) different from other chemical mechanical polishing liquids, which has versatility, can be used for a variety of
The chemically mechanical polishing 2 of material) compared to traditional polishing fluid, plane of crystal roughness reduces, not damaged defect；3) the novel throwing
Light liquid it is low in cost, synthesized without special process, and all components not will cause environmental pollution.
Detailed description of the invention
Fig. 1 is invention polishing fluid chemical-mechanical polishing mathing reason figure；
Fig. 2 is the optical microphotograph shape appearance figure after sapphire crystal polishing；
Rough surface figure after the polishing of Fig. 3 sapphire crystal measures figure；
Fig. 4 is the optical microphotograph shape appearance figure after diamond polishing；
Fig. 5 is that the rough surface figure after diamond crystal polishing measures figure；
Fig. 6 is the optical microphotograph shape appearance figure after silicon wafer polishing；
Fig. 7 is that the rough surface figure after silicon wafer polishing measures figure.
Specific embodiment
The present invention is based on for the purpose of inventing the high quality general chemistry machine polishing liquor that one kind can polish multiple material
Silicone hydroxyl can chemically react in aqueous solution with material surface, and combine chemical action and mechanism cooperates with work
With the final chemical mechanical polishing liquid for obtaining function admirable.Fig. 1 is chemical-mechanical polishing mathing reason figure.Specifically includes the following steps:
Example 1:
1) determine the zirconium oxide for selecting partial size 100nm as polishing fluid abrasive material.Sodium metasilicate is as chemical reaction reagent.
2) 7 parts of zirconias, 10 parts of sodium metasilicate analytical reagents are added in 100 parts of deionized waters.Use glass bar
Ultrasonic vibration 10min after being sufficiently stirred on one side stir while in ultrasonic vibration instrument.
3) polyurethane polishing pad is selected to be used as polishing pad for chemomechanical polishing, polishing it is preceding to polishing pad deionized water into
Row rinses.
3) setting polish pressure is 0.04Mpa, polishing disk rotating speed 90r/min, polishes flow quantity 10ml/min to sapphire
Crystal is chemically-mechanicapolish polished.
Fig. 2 is the optical microphotograph shape appearance figure after sapphire crystal polishing；
Rough surface figure after the polishing of Fig. 3 sapphire crystal measures figure；
By the above method configure chemical mechanical polishing liquid, on polyurethane polishing pad, with defined technological parameter into
Row chemically mechanical polishing experiment, can get the sapphire crystal surface that surface roughness is 0.538nm after processing.
Example 2:
1) determine the zirconium oxide for selecting partial size 100nm as polishing fluid abrasive material.Sodium metasilicate is as chemical reaction reagent.
2) 9 parts of zirconias, 12 parts of sodium metasilicate analytical reagents are added in 100 parts of deionized waters.Use glass bar
Ultrasonic vibration 10min after being sufficiently stirred on one side stir while in ultrasonic vibration instrument.
3) it selects glass plate as chemically mechanical polishing polishing disk, polishing disk is rushed with deionized water before polishing
It washes.
3) setting polish pressure is 0.6Mpa, polishing disk rotating speed 90r/min, and polishing flow quantity 10ml/min is to sapphire crystalline substance
Body is chemically-mechanicapolish polished.
Fig. 4 is the optical microphotograph shape appearance figure after diamond polishing；
Rough surface figure after Fig. 5 diamond polishing measures figure；
The chemical mechanical polishing liquid configured by the above method carries out chemistry on glass plate with defined technological parameter
Mechanical polishing experiment can get the diamond surface that surface roughness is 0.623nm after processing.
Example 3:
1) determine the zirconium oxide for selecting partial size 100nm as polishing fluid abrasive material.Sodium metasilicate is as chemical reaction reagent.
2) 8 parts of zirconias, 5 parts of sodium metasilicate analytical reagents are added in 100 parts of deionized waters.It is filled using glass bar
Ultrasonic vibration 10min after point stirring on one side stir while in ultrasonic vibration instrument.
3) polyurethane polishing pad is selected to be used as polishing pad for chemomechanical polishing, polishing it is preceding to polishing pad deionized water into
Row rinses.
3) setting polish pressure is 0.04Mpa, polishing disk rotating speed 90r/min, polishes flow quantity 10ml/min to sapphire
Crystal is chemically-mechanicapolish polished.
Fig. 6 is the optical microphotograph shape appearance figure after silicon wafer polishing；
Rough surface figure after Fig. 7 silicon wafer polishing measures figure；
By the above method configure chemical mechanical polishing liquid, on polyurethane polishing pad, with defined technological parameter into
Row chemically mechanical polishing experiment, can get the silicon chip surface that surface roughness is 0.412nm after processing.
Claims (1)
1. a kind of general chemistry machine polishing liquor, which can be used in polishing sapphire crystal, quartz,
Diamond, silicon wafer, tungsten alloy material, which is characterized in that the general chemistry machine polishing liquor ingredient include zirconia,
Sodium metasilicate analytical reagents, deionized water；At room temperature, by abrasive material zirconium oxide, sodium metasilicate, be separately added into deionized water, ultrasound
It is shaken 5 minutes in equipment and obtains chemical mechanical polishing liquid；In the chemical mechanical polishing liquid, zirconium oxide concentration be 0.05~
0.09g/ml, partial size are 0.05~0.2 μm, and the sodium silicate silicate is 0.05~0.12g/ml.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910658529.5A CN110358454A (en) | 2019-07-20 | 2019-07-20 | A kind of general chemistry machine polishing liquor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910658529.5A CN110358454A (en) | 2019-07-20 | 2019-07-20 | A kind of general chemistry machine polishing liquor |
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| Publication Number | Publication Date |
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| CN110358454A true CN110358454A (en) | 2019-10-22 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201910658529.5A Pending CN110358454A (en) | 2019-07-20 | 2019-07-20 | A kind of general chemistry machine polishing liquor |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101313388A (en) * | 2005-11-22 | 2008-11-26 | 卡伯特微电子公司 | Friction reducing aid for cmp |
| US20130171823A1 (en) * | 2011-12-30 | 2013-07-04 | Cheil Industries Inc. | CMP Slurry Composition and Polishing Method Using the Same |
| CN109913133A (en) * | 2019-03-29 | 2019-06-21 | 大连理工大学 | A kind of high-effect high-quality chemical mechanical polishing liquid of yag crystal |
-
2019
- 2019-07-20 CN CN201910658529.5A patent/CN110358454A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101313388A (en) * | 2005-11-22 | 2008-11-26 | 卡伯特微电子公司 | Friction reducing aid for cmp |
| US20130171823A1 (en) * | 2011-12-30 | 2013-07-04 | Cheil Industries Inc. | CMP Slurry Composition and Polishing Method Using the Same |
| CN109913133A (en) * | 2019-03-29 | 2019-06-21 | 大连理工大学 | A kind of high-effect high-quality chemical mechanical polishing liquid of yag crystal |
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| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20191022 |