CN110346423A - 一种cmos-mems湿度传感器 - Google Patents

一种cmos-mems湿度传感器 Download PDF

Info

Publication number
CN110346423A
CN110346423A CN201910591523.0A CN201910591523A CN110346423A CN 110346423 A CN110346423 A CN 110346423A CN 201910591523 A CN201910591523 A CN 201910591523A CN 110346423 A CN110346423 A CN 110346423A
Authority
CN
China
Prior art keywords
layer
sensor
humidity
mems
heating resistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201910591523.0A
Other languages
English (en)
Other versions
CN110346423B (zh
Inventor
肖韩
叶乐
於广军
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Institute of Information Technology AIIT of Peking University
Hangzhou Weiming Information Technology Co Ltd
Original Assignee
Advanced Institute of Information Technology AIIT of Peking University
Hangzhou Weiming Information Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Institute of Information Technology AIIT of Peking University, Hangzhou Weiming Information Technology Co Ltd filed Critical Advanced Institute of Information Technology AIIT of Peking University
Priority to CN201910591523.0A priority Critical patent/CN110346423B/zh
Publication of CN110346423A publication Critical patent/CN110346423A/zh
Priority to PCT/CN2020/099378 priority patent/WO2021000866A1/zh
Priority to US17/621,977 priority patent/US12000792B2/en
Application granted granted Critical
Publication of CN110346423B publication Critical patent/CN110346423B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/22—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance
    • G01N27/223—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance for determining moisture content, e.g. humidity
    • G01N27/225—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance for determining moisture content, e.g. humidity by using hygroscopic materials
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
    • G01N27/128—Microapparatus
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0083—Temperature control
    • B81B7/009—Maintaining a constant temperature by heating or cooling
    • B81B7/0096—Maintaining a constant temperature by heating or cooling by heating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00222—Integrating an electronic processing unit with a micromechanical structure
    • B81C1/00246—Monolithic integration, i.e. micromechanical structure and electronic processing unit are integrated on the same substrate
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
    • G01N27/121—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid for determining moisture content, e.g. humidity, of the fluid
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/22—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance
    • G01N27/223—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance for determining moisture content, e.g. humidity
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0214—Biosensors; Chemical sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/01—Suspended structures, i.e. structures allowing a movement
    • B81B2203/0136—Comb structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/04—Electrodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2207/00—Microstructural systems or auxiliary parts thereof
    • B81B2207/01—Microstructural systems or auxiliary parts thereof comprising a micromechanical device connected to control or processing electronics, i.e. Smart-MEMS
    • B81B2207/015—Microstructural systems or auxiliary parts thereof comprising a micromechanical device connected to control or processing electronics, i.e. Smart-MEMS the micromechanical device and the control or processing electronics being integrated on the same substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/07—Integrating an electronic processing unit with a micromechanical structure
    • B81C2203/0707—Monolithic integration, i.e. the electronic processing unit is formed on or in the same substrate as the micromechanical structure
    • B81C2203/0714—Forming the micromechanical structure with a CMOS process
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/07—Integrating an electronic processing unit with a micromechanical structure
    • B81C2203/0707—Monolithic integration, i.e. the electronic processing unit is formed on or in the same substrate as the micromechanical structure
    • B81C2203/0757—Topology for facilitating the monolithic integration
    • B81C2203/0771—Stacking the electronic processing unit and the micromechanical structure

Landscapes

  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Pathology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Immunology (AREA)
  • General Physics & Mathematics (AREA)
  • Electrochemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)

Abstract

本申请公开了一种CMOS‑MEMS湿度传感器，包括：互补金属氧化物半导体ASIC读出电路和微机电系统MEMS湿度传感器，所述MEMS湿度传感器设置于ASIC读出电路上所述ASIC读出电路包括：衬底、加热电阻层、金属层和介质层，所述加热电阻层在衬底之上，所述金属层在加热电阻层之上，所述衬底、加热电阻层和金属层之间通过介质层隔开；所述MEMS湿度传感器包括：铝电极层、钝化层和湿度敏感层，所述钝化层在铝电极层之上，所述湿度敏感层在钝化层之上。通过将加热电阻设置在ASIC电路中，实现加热功能，满足CMOS标准工艺，使得CMOS‑MEMS集成湿度传感器可以在低温高湿的工况下稳定使用。

Description

一种CMOS-MEMS湿度传感器
技术领域
本申请涉及半导体芯片领域，尤其涉及一种CMOS-MEMS湿度传感器。
背景技术
在航空航天，智能家居，冷链物流，洁净车间，农业畜牧业等领域，需要检测或监测环境湿度变化，以维持湿度在合适的状态。湿度的检测原理主要有电阻式，压阻式和电容式，其中电容式传感器由于其结构简单，检测范围宽，可靠性高，易与CMOS技术集成等优点而广泛运用。
目前，电容式传感器主要有两种设计方法，一种是平板结构设计，湿度敏感层置于第一和第二电极板的夹层中，第二电极板开若干孔，使空气进入高分子敏感层中，实现湿度感知。这种方案一般只适用于制作分立器件，需配合ASIC芯片系统级封装(System In aPackage，SiP)合封后使用，无法在一颗芯片上实现ASIC和MEMS器件的集成。另一种是叉指电容式结构设计，第一电极和第二电极在同一平面内，高分子层置于两者之间，以侧面电容检测的方式实现湿度测量。这种方案的好处在于可以实现ASIC和MEMS器件集成在一颗芯片上，成本上有较大优势。
另一方面，在低温高湿等恶劣工况下，湿度传感器的敏感层会产生凝结水，从而影响传感器的正常工作；因此现有技术中，有在MEMS湿度器件的叉指层下方设置加热电阻的方案，来解决凝结水的问题，同时进行不同的加热策略，还可以实现提升器件响应性能。但是该方案无法实现CMOS-MEMS的集成，主要因为铝后工艺无法兼容合适的加热电阻制作方案。
综上所述，需要提供一种能够实现CMOS-MEMS集成且有加热功能的CMOS-MEMS湿度传感器。
发明内容
为解决以上问题，本申请提出了一种CMOS-MEMS湿度传感器，包括：互补金属氧化物半导体ASIC读出电路和微机电系统MEMS湿度传感器，所述MEMS湿度传感器设置于ASIC读出电路上；
所述ASIC读出电路包括：衬底、加热电阻层、金属层和介质层，所述加热电阻层在衬底之上，所述金属层在加热电阻层之上，所述衬底、加热电阻层和金属层之间通过介质层隔开；
所述MEMS湿度传感器包括：铝电极层、钝化层和湿度敏感层，所述钝化层在铝电极层之上，所述湿度敏感层在钝化层之上。
优选地，所述加热电阻层包括多根并联或串联的加热电阻。
优选地，所述加热电阻掺杂多晶或N阱掺杂或P阱掺杂。
优选地，所述金属层的数量根据ASIC电路确定，各金属层之间通过介质层隔开，各所述金属层中，距离铝电极层最近的金属层为次顶层金属。
优选地，所述铝电极层在次顶层金属之上，呈叉指状阵列分布，所述铝电极层为顶层金属。
优选地，所述钝化层在顶层金属和次顶层金属之上，所述钝化层包括：氧化硅、氮化硅或其复合物，所述钝化层的厚度为80至150nm。
优选地，所述湿度敏感层包括：聚酰亚胺、氮化铝或石墨烯。
优选地，所述ASIC读出电路为1层多晶，多层金属的标准CMOS工艺。
优选地，所述衬底为硅衬底。
本申请的优点在于：将加热电阻设置在ASIC电路中，实现加热功能，满足CMOS标准工艺，使得CMOS-MEMS集成湿度传感器可以在低温高湿的工况下稳定使用。
附图说明
通过阅读下文优选实施方式的详细描述，各种其他的优点和益处对于本领域普通技术人员将变得清楚明了。附图仅用于示出优选事实方案的目的，而并不认为是对本申请的限制。而且在整个附图中，用同样的参考符号表示相同的部件。在附图中：
图1是本申请提供的一种CMOS-MEMS湿度传感器的结构图。
具体实施方式
下面将参照附图更详细地描述本公开的示例性实施方式。虽然附图中显示了本公开的示例性实施方式，然而应当理解，可以以各种形式实现本公开而不应被这里阐述的实施方式所限制。相反，提供这些实施方式是为了能够更透彻地理解本公开，并且能够将本公开的范围完整的传达给本领域的技术人员。
根据本申请的实施方式，提出一种CMOS-MEMS湿度传感器，如图1所示，包括：互补金属氧化物半导体ASIC读出电路和微机电系统MEMS湿度传感器，所述MEMS湿度传感器设置于ASIC读出电路上；
ASIC读出电路包括：衬底、加热电阻层、金属层和介质层，所述加热电阻在层衬底之上，所述金属层在加热电阻层之上，所述衬底、加热电阻层和金属层之间通过介质层隔开；
MEMS湿度传感器包括：铝电极层、钝化层和湿度敏感层，所述钝化层在铝电极层之上，所述湿度敏感层在钝化层之上。
加热电阻层包括多根并联或串联的加热电阻。
加热电阻掺杂多晶或N阱掺杂或P阱掺杂。
金属层的数量根据ASIC电路确定，各金属层之间通过介质层隔开，各所述金属层中，距离铝电极层最近的金属层为次顶层金属。
金属层设置在电阻条(加热电阻)上。
在一种可能的实施方式中，金属层可以为铝。
铝电极层在次顶层金属之上，呈叉指状阵列分布，所述铝电极层为顶层金属。
钝化层在顶层金属和次顶层金属之上，所述钝化层包括：氧化硅、氮化硅或其复合物等，所述钝化层的厚度为80至150nm。
湿度敏感层包括：聚酰亚胺、氮化铝或石墨烯等。
ASIC读出电路为1层多晶，多层金属的标准CMOS工艺。
衬底为硅衬底。
为了更好的理解本申请的实施方式，以下对其结构进行说明。
如图1所示，包含ASIC读出电路和湿度传感器层。其中ASIC读出电路层中包含衬底、加热电阻层、介质层和金属层。MEMS湿度传感器层中包含铝电极层(叉指电极)、钝化层和湿度敏感层。
在衬底上设置介质层，加热电阻层设置在介质层上，依次设置介质层和金属层，直至完成CMOS读出电路加工。CMOS读出电路表面有介质层。在CMOS读出电路上设置湿度传感器的叉指电极。在叉指电极层上设置钝化层。在设置钝化层之前，去除叉指电极之间的介质层，直至露出次顶层金属。最后在钝化层上设置湿度敏感敏层。
铝电极层包括多个铝电极(叉指电极)。
金属层包括多个金属。
本申请的实施方式中，通过将加热电阻设置在ASIC电路中，实现加热功能，满足CMOS标准工艺，使得CMOS-MEMS集成湿度传感器可以在低温高湿的工况下稳定使用。
以上所述，仅为本申请较佳的具体实施方式，但本申请的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本申请揭露的技术范围内，可轻易想到的变化或替换，都应涵盖在本申请的保护范围之内。因此，本申请的保护范围应以所述权利要求的保护范围为准。

Claims (9)

1.一种CMOS-MEMS湿度传感器，其特征在于，包括：互补金属氧化物半导体ASIC读出电路和微机电系统MEMS湿度传感器，所述MEMS湿度传感器设置于ASIC读出电路上；
所述ASIC读出电路包括：衬底、加热电阻层、金属层和介质层，所述加热电阻层在衬底之上，所述金属层在加热电阻层之上，所述衬底、加热电阻层和金属层之间通过介质层隔开；
所述MEMS湿度传感器包括：铝电极层、钝化层和湿度敏感层，所述钝化层在铝电极层之上，所述湿度敏感层在钝化层之上。
2.如权利要求1所述的传感器，其特征在于，所述加热电阻层包括多根并联或串联的加热电阻。
3.如权利要求2所述的传感器，其特征在于，所述加热电阻掺杂多晶或N阱掺杂或P阱掺杂。
4.如权利要求1所述的传感器，其特征在于，所述金属层的数量根据ASIC电路确定，各金属层之间通过介质层隔开，各所述金属层中，距离铝电极层最近的金属层为次顶层金属。
5.如权利要求1所述的传感器，其特征在于，所述铝电极层在次顶层金属之上，呈叉指状阵列分布，所述铝电极层为顶层金属。
6.如权利要求1所述的传感器，其特征在于，所述钝化层在顶层金属和次顶层金属之上，所述钝化层包括：氧化硅、氮化硅或其复合物，所述钝化层的厚度为80至150nm。
7.如权利要求1所述的传感器，其特征在于，所述湿度敏感层包括：聚酰亚胺、氮化铝或石墨烯。
8.如权利要求1所述的传感器，其特征在于，所述ASIC读出电路为1层多晶，多层金属的标准CMOS工艺。
9.如权利要求1所述的传感器，其特征在于，所述衬底为硅衬底。
CN201910591523.0A 2019-07-02 2019-07-02 一种cmos-mems湿度传感器 Active CN110346423B (zh)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN201910591523.0A CN110346423B (zh) 2019-07-02 2019-07-02 一种cmos-mems湿度传感器
PCT/CN2020/099378 WO2021000866A1 (zh) 2019-07-02 2020-06-30 一种cmos-mems湿度传感器
US17/621,977 US12000792B2 (en) 2019-07-02 2020-06-30 CMOS-MEMS humidity sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201910591523.0A CN110346423B (zh) 2019-07-02 2019-07-02 一种cmos-mems湿度传感器

Publications (2)

Publication Number Publication Date
CN110346423A true CN110346423A (zh) 2019-10-18
CN110346423B CN110346423B (zh) 2021-05-04

Family

ID=68177493

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201910591523.0A Active CN110346423B (zh) 2019-07-02 2019-07-02 一种cmos-mems湿度传感器

Country Status (3)

Country Link
US (1) US12000792B2 (zh)
CN (1) CN110346423B (zh)
WO (1) WO2021000866A1 (zh)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111130529A (zh) * 2019-12-17 2020-05-08 浙江省北大信息技术高等研究院 逻辑电路的设计方法
WO2021000866A1 (zh) * 2019-07-02 2021-01-07 浙江省北大信息技术高等研究院 一种cmos-mems湿度传感器
WO2021109999A1 (zh) * 2019-12-04 2021-06-10 杭州未名信科科技有限公司 一种湿度传感器及其制备方法
CN114858874A (zh) * 2022-07-07 2022-08-05 苏州敏芯微电子技术股份有限公司 湿度感测结构、湿度传感器及湿度感测结构的制作方法

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101620197A (zh) * 2009-07-23 2010-01-06 东南大学 一种快速响应的cmos相对湿度传感器
CN102243199A (zh) * 2011-04-20 2011-11-16 东南大学 快速响应的微电子机械系统相对湿度传感器
CN103303859A (zh) * 2012-03-09 2013-09-18 马库伯公司 用于集成mems-cmos装置的方法和结构
CN103675042A (zh) * 2013-11-30 2014-03-26 江苏物联网研究发展中心 Cmos mems电容式湿度传感器
CN103698367A (zh) * 2013-11-27 2014-04-02 北京长峰微电科技有限公司 一种加热式湿度传感器及其制作方法
WO2014108371A1 (en) * 2013-01-11 2014-07-17 MEAS France Capacitive sensor integrated onto semiconductor circuit
CN105253851A (zh) * 2015-09-14 2016-01-20 合肥芯福传感器技术有限公司 一种芯片级系统传感器及其制备方法
CN107121461A (zh) * 2016-02-25 2017-09-01 恩智浦美国有限公司 集成电容式湿度传感器
CN104849325B (zh) * 2014-02-18 2018-02-27 无锡华润上华科技有限公司 与cmos工艺兼容的mems湿度传感器及其制造方法
CN109444235A (zh) * 2018-10-23 2019-03-08 中国科学院微电子研究所 集成式湿度传感器及其制造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003004683A (ja) 2001-06-15 2003-01-08 Denso Corp 容量式湿度センサ
CN1210565C (zh) * 2003-06-12 2005-07-13 东南大学 微型湿度传感器
CN102253091A (zh) * 2011-04-19 2011-11-23 东南大学 基于氧化石墨烯的电容式相对湿度传感器
WO2014066978A1 (en) * 2012-10-29 2014-05-08 MEMS-Vision International Inc. Methods and systems for humidity and pressure sensor overlay integration with electronics
US10175188B2 (en) * 2013-03-15 2019-01-08 Robert Bosch Gmbh Trench based capacitive humidity sensor
CN103236429B (zh) * 2013-05-14 2015-09-09 哈尔滨工业大学 带加热单元的微型碳纳米管湿度传感器芯片
CN104914138A (zh) 2015-07-03 2015-09-16 深圳市共进电子股份有限公司 湿度传感器、湿度传感器阵列及其制备方法
CN107144609B (zh) * 2017-04-01 2020-03-13 上海申矽凌微电子科技有限公司 湿敏传感器的制造方法以及使用该方法制造的湿敏传感器
JP7120519B2 (ja) * 2018-07-12 2022-08-17 ミネベアミツミ株式会社 湿度センサ及びその製造方法
CN110346423B (zh) * 2019-07-02 2021-05-04 杭州未名信科科技有限公司 一种cmos-mems湿度传感器

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101620197A (zh) * 2009-07-23 2010-01-06 东南大学 一种快速响应的cmos相对湿度传感器
CN102243199A (zh) * 2011-04-20 2011-11-16 东南大学 快速响应的微电子机械系统相对湿度传感器
CN103303859A (zh) * 2012-03-09 2013-09-18 马库伯公司 用于集成mems-cmos装置的方法和结构
WO2014108371A1 (en) * 2013-01-11 2014-07-17 MEAS France Capacitive sensor integrated onto semiconductor circuit
CN103698367A (zh) * 2013-11-27 2014-04-02 北京长峰微电科技有限公司 一种加热式湿度传感器及其制作方法
CN103675042A (zh) * 2013-11-30 2014-03-26 江苏物联网研究发展中心 Cmos mems电容式湿度传感器
CN104849325B (zh) * 2014-02-18 2018-02-27 无锡华润上华科技有限公司 与cmos工艺兼容的mems湿度传感器及其制造方法
CN105253851A (zh) * 2015-09-14 2016-01-20 合肥芯福传感器技术有限公司 一种芯片级系统传感器及其制备方法
CN107121461A (zh) * 2016-02-25 2017-09-01 恩智浦美国有限公司 集成电容式湿度传感器
CN109444235A (zh) * 2018-10-23 2019-03-08 中国科学院微电子研究所 集成式湿度传感器及其制造方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021000866A1 (zh) * 2019-07-02 2021-01-07 浙江省北大信息技术高等研究院 一种cmos-mems湿度传感器
US12000792B2 (en) 2019-07-02 2024-06-04 Hangzhou Weiming Xinke Technology Co., Ltd CMOS-MEMS humidity sensor
WO2021109999A1 (zh) * 2019-12-04 2021-06-10 杭州未名信科科技有限公司 一种湿度传感器及其制备方法
CN111130529A (zh) * 2019-12-17 2020-05-08 浙江省北大信息技术高等研究院 逻辑电路的设计方法
CN114858874A (zh) * 2022-07-07 2022-08-05 苏州敏芯微电子技术股份有限公司 湿度感测结构、湿度传感器及湿度感测结构的制作方法

Also Published As

Publication number Publication date
US20220244207A1 (en) 2022-08-04
US12000792B2 (en) 2024-06-04
WO2021000866A1 (zh) 2021-01-07
CN110346423B (zh) 2021-05-04

Similar Documents

Publication Publication Date Title
CN110346423A (zh) 一种cmos-mems湿度传感器
US7471093B2 (en) Capacitive humidity sensor
CN1327214C (zh) 静电电容传感器
CN102692432B (zh) 集成式湿度传感器及制造方法
EP3062077B1 (en) Multi-sensor assembly
CN101932928B (zh) 集成的相对湿度传感器的电容平衡的改进结构
US20070062812A1 (en) Gas sensor and method for the production thereof
JP2007535662A (ja) 統合電子センサ
JP2003004683A (ja) 容量式湿度センサ
KR102361998B1 (ko) 센서 칩
CN1327215C (zh) Cmos工艺兼容的相对湿度传感器
WO2014185771A2 (en) A capacitive humidity sensor
CN103946697A (zh) 集成湿度传感器及其制造方法
US9234859B2 (en) Integrated device of a capacitive type for detecting humidity, in particular manufactured using a CMOS technology
JP2008111669A5 (zh)
WO2021109999A1 (zh) 一种湿度传感器及其制备方法
CN108351267A (zh) 电容式压力传感器及其制造方法
CN106768050B (zh) 一种单芯片高精度温湿度传感器
CN102449453B (zh) 具有高信号电压及高信号/噪声比的红外光传感器
US6834547B2 (en) Humidity sensor and fabrication method thereof
CN110118807A (zh) 一种mems湿度传感器及其制造方法
CN107356637A (zh) 环境传感器的制造方法及使用该方法制造的环境传感器
CN106082102A (zh) 集成温度湿度气体传感的传感器电路制造方法及传感器
US10641722B2 (en) Micromechanical moisture sensor device and corresponding manufacturing method
CN109932108A (zh) 压力传感器

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
CB02 Change of applicant information

Address after: Room 101, building 1, block C, Qianjiang Century Park, ningwei street, Xiaoshan District, Hangzhou City, Zhejiang Province

Applicant after: Hangzhou Weiming Information Technology Co.,Ltd.

Applicant after: Institute of Information Technology, Zhejiang Peking University

Address before: Room 288-1, 857 Xinbei Road, Ningwei Town, Xiaoshan District, Hangzhou City, Zhejiang Province

Applicant before: Institute of Information Technology, Zhejiang Peking University

Applicant before: Hangzhou Weiming Information Technology Co.,Ltd.

CB02 Change of applicant information
GR01 Patent grant
GR01 Patent grant