CN110337056A - A kind of production method of high density directive property piezo-electric electro-acoustic transducer array - Google Patents
A kind of production method of high density directive property piezo-electric electro-acoustic transducer array Download PDFInfo
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- CN110337056A CN110337056A CN201910721646.1A CN201910721646A CN110337056A CN 110337056 A CN110337056 A CN 110337056A CN 201910721646 A CN201910721646 A CN 201910721646A CN 110337056 A CN110337056 A CN 110337056A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 239000010408 film Substances 0.000 claims abstract description 56
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 36
- 239000012528 membrane Substances 0.000 claims abstract description 36
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 36
- 239000010703 silicon Substances 0.000 claims abstract description 36
- 238000001259 photo etching Methods 0.000 claims abstract description 18
- 239000010409 thin film Substances 0.000 claims abstract description 18
- 229910052751 metal Inorganic materials 0.000 claims abstract description 10
- 239000002184 metal Substances 0.000 claims abstract description 10
- 238000000151 deposition Methods 0.000 claims abstract description 4
- 239000000463 material Substances 0.000 claims description 21
- 230000000694 effects Effects 0.000 claims description 6
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical group [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 claims description 6
- 229910052451 lead zirconate titanate Inorganic materials 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 3
- 229910044991 metal oxide Inorganic materials 0.000 claims description 3
- 150000004706 metal oxides Chemical class 0.000 claims description 3
- 229910052755 nonmetal Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 239000010453 quartz Substances 0.000 claims description 3
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- 239000011701 zinc Substances 0.000 claims description 3
- 229910002056 binary alloy Inorganic materials 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 8
- 239000010410 layer Substances 0.000 description 39
- 239000000758 substrate Substances 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 238000002604 ultrasonography Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 101150042817 NFS1 gene Proteins 0.000 description 1
- 101100126298 Rickettsia conorii (strain ATCC VR-613 / Malish 7) iscS gene Proteins 0.000 description 1
- 101150114492 SPL1 gene Proteins 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 239000000806 elastomer Substances 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 230000026683 transduction Effects 0.000 description 1
- 238000010361 transduction Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 230000010415 tropism Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R31/00—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
- H04R31/003—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor for diaphragms or their outer suspension
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R2231/00—Details of apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor covered by H04R31/00, not provided for in its subgroups
- H04R2231/001—Moulding aspects of diaphragm or surround
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Signal Processing (AREA)
- Transducers For Ultrasonic Waves (AREA)
Abstract
The present invention relates to a kind of production method of high density directive property piezo-electric electro-acoustic transducer array, one of unit production methods are as follows: the upper surface of silicon wafer wafer is sequentially depositing lower electrode, lower layer's piezoelectricity, target, upper layer piezoelectricity, upper electrode film and forms the double-deck piezoelectric thin film layer structure；The double-deck piezoelectric thin film layer structure is subjected to longitudinal photoetching, the double-deck piezoelectric thin film layer structure is divided into the part of left, center, right three；Left half bilayer piezoelectric membrane photoetching is simultaneously etched to exposing lower electrode film；Right half bilayer piezoelectric membrane photoetching is simultaneously etched to the lower target film of exposing；The upper surface of three parts generated carries out deposited metal electrical connection film and graphically makes routing；The silicon wafer wafer of middle section is carried out front etch to discharge to form the chamber portion with inclination angle.This method relative to etch-back technique, the minimum spacing of unit two sides can contract it is smaller, so that the cell density of the micro- electroacoustic transducer of array is increased, to enhance the directive property of electroacoustic transducer.
Description
Technical field
The present invention relates to electroacoustic transducer fields, and in particular to a kind of high density directive property piezo-electric electro-acoustic transducer array
Production method.
Background technique
As to music, film and the growth for participating in the audio frequencies demands such as phone, video conference is appreciated, electroacoustic equipment becomes
It obtains and is increasingly positioned at entertainment orientation and commercialization.It is put outside traditional electroacoustic equipment, such as common speaker, mobile phone, all there is one
Common ground: it directly transmits, i.e., is moved by directly excitation air molecule, to generate audible sound.But this is used in public places
A little electroacoustic equipments can bring certain individual privacy and noise pollution problem.Even solving this with wired or wireless headset
A little problems, however wear earphone and will cause the sense of discomfort and walking inconvenience of ear again.
Therefore, develop a kind of audio frequency directional electroacoustic transducer that can be realized voice directional spreading, to protection people's privacy
With prevent noise pollution from having very great help.Compared with traditional electroacoustic equipment, audio frequency directional electroacoustic transducer is then using complete
Different technologies generate audible sound indirectly in air.The technology emits modulated directional ultrasonic signal to air
In, low frequency audible sound is generated by the reciprocation of air molecule and ultrasonic wave on ultrasound beamformer direction.Because producing
The reciprocation of raw low frequency audible sound exists only in the ultrasonic beam of high directivity, that is, realizes determining to keep pouring in and broadcasting for audible sound.
Audio frequency directional type electroacoustic transducer may be mounted in mobile phone, and in driving, driver need not hold mobile phone
Or wearing earphone can be conversed, and safe driving is conducive to；The use of audio, video program is listened to by mobile phone in public
Person, it is not necessary to which good audiovisual experience can be possessed by wearing earphone, without interfering with other people.These use demands make audio frequency
Orienting micro- electroacoustic transducer has boundless application prospect.Audio frequency directional electroacoustic transducer system is mainly by the micro- electroacoustic of ultrasound
Energy converter, preamplifier and Digital Signal Processing (DSP) three parts composition.At the digital signal of audio frequency directional electroacoustic transducer
Reason part is less big with the difference of common audio frequency directional electroacoustic transducer, and preamplifier also partially has benefited from current integrated circuit
Development, do not distinguish too much.And the micro- electroacoustic transducer part of ultrasound is just entirely different, because electroacoustic transducer size is significantly
Reduce and require considerable output acoustic pressure again, so needing by MEMS (micro-electromechanical
System, abbreviation MEMS) technology prepares micro- electroacoustic transducer, this patent main purpose be proposed using MEMS technology it is a kind of high
Density directive property piezo-electric electro-acoustic transducer array and preparation method thereof.
Summary of the invention
1. technical problem to be solved:
For the above technical issues, the present invention proposes a kind of production of high density directive property piezo-electric electro-acoustic transducer array
Method, the piezo-electric electro-acoustic transducer produced can be improved the output acoustic pressure of electroacoustic transducer and reduce the ruler of electroacoustic transducer
It is very little.
2. technical solution:
A kind of production method of high density directive property piezo-electric electro-acoustic transducer array: the high density directive property piezoelectric electro electroacoustic
The array that transducer array is made of multiple high density directive property piezo-electric electro-acoustic transducer units, the high density directive property piezoelectricity
Electroacoustic transducer unit production method the following steps are included:
Step 1: silicon wafer wafer is chosen；
Step 2: it is thin that lower electrode film, lower layer's piezoelectric membrane, target are sequentially depositing in the upper surface of silicon wafer wafer
Film, upper layer piezoelectric membrane, upper electrode film totally 5 layer film form the double-deck piezoelectric thin film layer structure；
Step 3: the double-deck piezoelectric thin film layer structure generated in step 2 is subjected to photoetching and is etched；It specially will be double-deck
The longitudinal direction photoetching of piezoelectric thin film layer structure is simultaneously etched to silicon wafer wafer upper surface；The double-deck piezoelectric thin film layer structure that step 2 is generated
It is divided into the part of left, center, right three, i.e. left half bilayer piezoelectric membrane, middle section bilayer piezoelectric membrane and right half bilayer pressure
Conductive film；Silicon wafer wafer is refused photoetching and is etched in step 3；
Step 4: the photoetching of horizontal direction is carried out to left half bilayer piezoelectric membrane and is etched to exposing lower electrode film；
The photoetching of horizontal direction is carried out to right half bilayer piezoelectric membrane and is etched to the lower target film of exposing；
Step 5: the upper surface of generate in step 4 three parts is subjected to deposited metal and is electrically connected film, and figure
Change production routing PAD；
Step 6: the silicon wafer wafer of the bottom of middle section bilayer piezoelectric membrane is subjected to front etch release, forms band
There is the chamber portion at inclination angle.
Further, the size of the silicon wafer wafer is 4 cun or 6 cun or 8 cun or 12 cun；The wafer is common
Silicon wafer or soi wafer.
Further, the lower electrode film, target film, upper electrode film material be have Ohmic contact simultaneously
Conductive metal, metal oxide or non-metal conductor.
Further, the lower electrode film, target film, upper electrode film material be metal platinum, gold, aluminium.
Further, the material of upper layer piezoelectric membrane and lower layer's piezoelectric membrane is the material for having piezoelectric effect.
Further, the material of upper layer piezoelectric membrane and lower layer's piezoelectric membrane is lead zirconate titanate or oxidized aluminum nitride zinc or three
Lead zirconate titanate, the quartz of member system or binary system doping.
3. the utility model has the advantages that
(1) electroacoustic transducer of the invention is only with ordinary silicon chip, using double-deck piezoelectric membrane elastomer each other, while again
It can be used as the double-deck sensitive layer to use.Cavity, relative to etch-back technique, unit two sides are formed by front release tech
Minimum spacing can contract smaller, so that the cell density of the micro- electroacoustic transducer of array is increased, to enhance electroacoustic transduction
The directive property of device.
(2) the double-deck piezoelectric membrane that electroacoustic transducer of the invention uses can enhance the sensitivity of micro- electroacoustic transducer.
(3) electroacoustic transducer of the invention and can using ordinary silicon chip as substrate, save the manufacturing cost of chip.
Detailed description of the invention
Fig. 1 is traditional MEMS piezoelectric micromotor electroacoustic transducer structure schematic diagram；
Fig. 2 is a kind of front view of a unit in high density directive property piezo-electric electro-acoustic transducer array；
Fig. 3 is a kind of production flow diagram of one unit of high density directive property piezo-electric electro-acoustic transducer array.
Specific embodiment
The present invention is specifically described with reference to the accompanying drawing.
For the audio frequency range that human ear can be heard in 20Hz to 20kHz, acoustic pressure range is minimum in 20uPa to 100kPa
The 20uPa of acoustic pressure limitation at 1 khz.For device design requirement, sound pressure level will reach under 1kHz frequency and 1m distance
40dB.Such as the MEMS piezoelectric micromotor electroacoustic transducer for possessing 255 units for one, it would be desirable to calculate list first
Sound pressure level to be achieved needed for a unit to obtain needing acoustic pressure to be achieved, then extrapolates amplitude required for unit.
According to psychologic acoustics, if minimum intermodulation distortion is in 20kHz, it is necessary to sampling rate to 40kHz.For not in unison
Sound pressure level under voice frequency has,
SPLf=20000=SPLf=1000+20lg (half sample rate of f/f=1000)
For the MEMS piezoelectric micromotor electroacoustic transducer of 255 units, have
SPL255=SPLf=20000=40dB+20lg (20000/10000)=66Db
The SPL of multiple units can be expressed as,
SPLn=20lg (Pn/P0)
Wherein, P is the acoustic pressure generated, and P0 is minimum acoustic pressure 20uPa.Therefore, the MEMS piezoelectric micromotor electroacoustic of individual unit changes
Can device need the sound pressure level to be achieved to be,
SPL1=SPL255-20lg255=17.87dB
Therefore, the acoustic pressure P1 generated required for single MEMS piezoelectric micromotor electroacoustic transducer is,
P1=P010SPL1/20=156.5uPa
MEMS piezoelectric micromotor electroacoustic transducer is in such a way that piezoelectric cantilever driving center board generates acoustic pressure, the sound of generation
Pressure is related with the factors such as Piezoelectric Driving cantilever beam amplitude, platen area and frequency, has
2 π ρ S ε f2/r of P=√
Wherein, ρ is atmospheric density, and S is energy converter platen area, needs to be arranged to the circle that radius is 150um according to device
Shape, ε are cantilever beam amplitudes, and r is the distance of intended recipient sound.Consider to generate required for single MEMS piezoelectric micromotor electroacoustic transducer
Acoustic pressure, then can extrapolate Piezoelectric Driving cantilever beam amplitude, have
ε=Pr/ (2 π ρ S of √)=2.5um
Therefore, for one possesses the MEMS piezoelectric micromotor electroacoustic transducer of 255 units under 1kHz frequency and 1m distance
Sound pressure level will reach 40dB, determining that energy converter sounding circle plate radius under conditions of 150um, needs Piezoelectric Driving cantilever
Beam amplitude reaches 2.5um.More beam micro-structures are designed by the piezoelectric coefficient d 31 of the condition combination piezoelectric material, so that it may be met
The demand of device.
Such as the structure chart that attached drawing 1 is traditional MEMS piezoelectric micromotor electroacoustic transducer, which uses soi wafer substrate
A1 is formed as piezoelectric elasticity layer, simple single layer piezoelectric membrane structure as sensitive layer and etch-back technique release cavity
Film makes sensor vibrate and work under electric drive.In Fig. 1, A1 is the bottom silicon layer and top silicon layer of soi wafer, and A2 is SOI silicon
The BOX layer of piece, A3 are upper/lower electrode layer, and A4 is metal Pad layers, and A5 is PZT piezoelectric material.Its working principle is that: total
Processing is on insulator on silicon substrate (Silicon on Insulator, SOI), by have middle layer (i.e. bonding coat,
Adhensive layer) joining technique be combined together PZT (be also possible to AlN either ZnO) with SOI substrate.SOI
Refer to and re-forms one layer of monocrystalline silicon thin film or monocrystalline silicon thin film in an insulating substrate by an insulating layer (usually SiO2)
From the silicon substrate of support separate this spline structure material, this material structure can realize manufacture device thin-film material completely with
The isolation of substrate material has ghost effect is small, speed is fast, low in energy consumption and integrated level is high etc. compared to common silicon substrate SOI substrate
Plurality of advantages.After PZT layers of upper/lower electrode adds voltage, according to inverse piezoelectric effect, PZT can be laterally (to d31 transverse-vibration
For dynamic model formula) generate strain, occur it is certain elongate or shorten, since PZT is by being engaged with it thicker silicon bullet together
Property layer and boundary constraint, make PZT drive silicon elastic layer bend together, thus make film generate extensional vibration, in air
In medium, this extensional vibration will generate (super) sound wave.
By in Fig. 1 it can be found that traditional MEMS piezoelectric micromotor electroacoustic transducer structure backside cavity be inverted trapezoidal, formed electroacoustic
When transducer array, the spacing of two units can be influenced by back cavity structure and inevitably be increased, so that directive property is poor.This
Outside, the sensitivity of single layer piezoelectric film is relatively low, also relatively high using the cost of soi wafer.
As shown in Fig. 3, a kind of production method of high density directive property piezo-electric electro-acoustic transducer array, the high density refer to
The array that tropism piezo-electric electro-acoustic transducer array is made of multiple high density directive property piezo-electric electro-acoustic transducer units；It is described highly dense
Spend directive property piezo-electric electro-acoustic transducer unit production method the following steps are included:
Step 1: silicon wafer wafer 1 is chosen；
Step 2: it is thin that lower electrode film 2, lower layer's piezoelectric membrane 3, target are sequentially depositing in the upper surface of silicon wafer wafer
Film 4, upper layer piezoelectric membrane 5, upper electrode film 6 totally 5 layer film form the double-deck piezoelectric thin film layer structure；
Step 3: the double-deck piezoelectric thin film layer structure generated in step 2 is subjected to photoetching and is etched；It specially will be double-deck
The longitudinal direction photoetching of piezoelectric thin film layer structure is simultaneously etched to silicon wafer wafer upper surface；The double-deck piezoelectric thin film layer structure that step 2 is generated
It is divided into the part of left, center, right three, i.e. left half bilayer piezoelectric membrane, middle section bilayer piezoelectric membrane and right half bilayer pressure
Conductive film；Silicon wafer wafer 1 is refused photoetching and is etched in step 3；
Step 4: left half bilayer piezoelectric membrane is carried out the photoetching of horizontal direction and is etched to expose lower electrode film 2；
The photoetching of horizontal direction is carried out to right half bilayer piezoelectric membrane and is etched to the lower target film 4 of exposing；
Step 5: the upper surface of generate in step 4 three parts is subjected to deposited metal and is electrically connected film, and figure
Change production routing PAD7；
Step 6: the silicon wafer wafer of the bottom of middle section bilayer piezoelectric membrane is subjected to front etch release, forms band
There is the chamber portion at inclination angle.
Further, the size of the silicon wafer wafer is 4 cun or 6 cun or 8 cun or 12 cun；The wafer is common
Silicon wafer or soi wafer.
Further, the lower electrode film 2, target film 4, upper electrode film 6 material be to have ohm and connect
Touching and conductive metal, metal oxide or non-metal conductor.
Further, the lower electrode film, target film, upper electrode film material be metal platinum, gold, aluminium.
Further, the material of lower layer's piezoelectric membrane is the material for having piezoelectric effect.
Further, the material of lower layer's piezoelectric membrane is lead zirconate titanate or oxidized aluminum nitride zinc or ternary system or binary
It is lead zirconate titanate, the quartz of doping.
It is as shown in Fig. 2 the structure of a unit of the electroacoustic transducer processed using method provided by the invention
Figure.Wherein 1 is silicon wafer wafer；2 be lower electrode film；3 be lower layer's piezoelectric membrane；4 be target film；5 be upper layer piezoelectricity
Film；6 be upper electrode film；7 be upper electrode film.After the upper/lower electrode to PZT layers applies alternating voltage, according to inverse piezoelectricity
Effect, PZT can be adjusted and be handed in the strain of transverse direction (d31 lateral vibration mode) and longitudinal (d33 longitudinal vibration mode) generation period
The frequency of time variant voltage can make the PZT layers of vibration generated by a relatively large margin closer to the intrinsic frequency of PZT, and then in air
(super) sound wave is generated in medium.
Although the present invention has been described by way of example and in terms of the preferred embodiments, they be not it is for the purpose of limiting the invention, it is any ripe
This those skilled in the art is practised, without departing from the spirit and scope of the invention, can make various changes or retouch from working as, therefore guarantor of the invention
Shield range should be subject to what claims hereof protection scope was defined.
Claims (6)
1. a kind of production method of high density directive property piezo-electric electro-acoustic transducer array, the high density directive property piezoelectric electroacoustic transducer
The array that energy device array is made of multiple high density directive property piezo-electric electro-acoustic transducer units；It is characterized by: the high density
Directive property piezo-electric electro-acoustic transducer unit production method specifically includes the following steps:
Step 1: silicon wafer wafer is chosen；
Step 2: the upper surface of silicon wafer wafer be sequentially depositing lower electrode film, lower layer's piezoelectric membrane, target film, on
It is laminated conductive film, upper electrode film totally 5 layer film, forms the double-deck piezoelectric thin film layer structure；
Step 3: the double-deck piezoelectric thin film layer structure generated in step 2 is subjected to photoetching and is etched；Specially by the double-deck piezoelectricity
The photoetching of film layer structure longitudinal direction is simultaneously etched to silicon wafer wafer upper surface；The double-deck piezoelectric thin film layer structure that step 2 generates is divided into
The part of left, center, right three, i.e. left half bilayer piezoelectric membrane, middle section bilayer piezoelectric membrane and right half bilayer piezoelectricity are thin
Film；Silicon wafer wafer is refused photoetching and is etched in step 3；
Step 4: the photoetching of horizontal direction is carried out to left half bilayer piezoelectric membrane and is etched to exposing lower electrode film；To the right side
Partial double piezoelectric membrane carries out the photoetching of horizontal direction and is etched to the lower target film of exposing；
Step 5: the upper surface of generate in step 4 three parts is subjected to deposited metal and is electrically connected film, and is graphically made
Make routing PAD；
Step 6: carrying out front etch release for the silicon wafer wafer of the bottom of middle section bilayer piezoelectric membrane, is formed to have and be inclined
The chamber portion at angle.
2. a kind of production method of high density directive property piezo-electric electro-acoustic transducer array according to claim 1, feature
Be: the size of the silicon wafer wafer is 4 cun or 6 cun or 8 cun or 12 cun；The wafer is ordinary silicon chip or SOI
Silicon wafer.
3. a kind of production method of high density directive property piezo-electric electro-acoustic transducer array according to claim 1, feature
Be: the lower electrode film, target film, upper electrode film material be have Ohmic contact and conductive gold
Category, metal oxide or non-metal conductor.
4. a kind of production method of high density directive property piezo-electric electro-acoustic transducer array according to claim 1, feature
Be: the lower electrode film, target film, upper electrode film material be metal platinum, gold, aluminium.
5. a kind of production method of high density directive property piezo-electric electro-acoustic transducer array according to claim 1, feature
Be: the material of upper layer piezoelectric membrane and lower layer's piezoelectric membrane is the material for having piezoelectric effect.
6. a kind of production method of high density directive property piezo-electric electro-acoustic transducer array according to claim 1, feature
Be: the material of upper layer piezoelectric membrane and lower layer's piezoelectric membrane is lead zirconate titanate or oxidized aluminum nitride zinc or ternary system or binary system
Lead zirconate titanate, the quartz of doping.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111816755A (en) * | 2020-06-18 | 2020-10-23 | 中北大学 | AlN-based piezoelectric MEMS hydrophone and preparation method thereof |
| US20210377670A1 (en) * | 2020-05-29 | 2021-12-02 | Qualcomm Incorporated | Audio speaker and proximity sensor with piezoelectric polymer technology |
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