CN110333222A - Two-way strain detecting method and apparatus in the face of graphene - Google Patents
Two-way strain detecting method and apparatus in the face of graphene Download PDFInfo
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- CN110333222A CN110333222A CN201910639341.6A CN201910639341A CN110333222A CN 110333222 A CN110333222 A CN 110333222A CN 201910639341 A CN201910639341 A CN 201910639341A CN 110333222 A CN110333222 A CN 110333222A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/16—Measuring arrangements characterised by the use of optical techniques for measuring the deformation in a solid, e.g. optical strain gauge
- G01B11/168—Measuring arrangements characterised by the use of optical techniques for measuring the deformation in a solid, e.g. optical strain gauge by means of polarisation
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/65—Raman scattering
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
- G01N2021/4792—Polarisation of scatter light
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Abstract
The present invention provides strain detecting method and apparatus two-way in the face of graphene, comprising: obtains tested graphene sample and back scattering polarizes Raman system；It sets tested graphene sample and polarizes the sample coordinate system under Raman system in back scattering；The crystal orientation angle, principal strain angle, phonon for obtaining tested graphene sample deform gesture coefficient and without the strain peak G Raman frequency shift；Set incident light polarization angle and scatter light polarization angle；Set the measured point of tested graphene sample；Raman system is polarized using back scattering, regulates and controls incident light polarization angle and scatter light polarization angle to obtain the peak the G Raman frequency shift increment of measured point；According to the linear relationship between the peak G Raman frequency shift increment and the first principal strain and the second principal strain, incident light polarization angle, scatter light polarization angle, phonon deformation gesture coefficient, the peak the G Raman frequency shift increment without the strain peak G Raman frequency shift, measured point, the first principal strain and the second principal strain are obtained；To realize the lossless precise measurement of two-way strain in tested graphene sample face.
Description
Technical field
The present invention relates to mechanical meaurement technical fields, more particularly, to strain detecting method two-way in the face of graphene and dress
It sets.
Background technique
Recently as it is micro-, receive the development of field science and technology, in relation to it is micro-, receive the research of material and device performance under scale
Have become the multidisciplinary Disciplinary Frontiers paid close attention to jointly.Graphene as a kind of two-dimension nano materials, have excellent optics,
Electricity, mechanical characteristic, materialogy, micro-nano technology and in terms of it is with important application prospects, and strain etc. mechanics ginseng
It measures and the Electronic Structure Characteristics of graphene and its application is had an important influence.Therefore, carry out it is micro-, receive the related power of graphene under scale
Learn parameter non-destructive testing, the new technology of characterization and new method research is become with accurately grasping the information such as its strain regime, distribution
The urgent need of field development, has important scientific meaning and application value.
Currently, can only measure in unidirectional strain regime by Raman strain measurement technique or wait stone under biaxial strains state
The mechanical parameters such as the strain of black alkene sample.However, for the graphene sample under two-way strain regime, existing Raman strain
Measuring technique cannot achieve non-equal twin shafts two in its face and measure to the decoupling of strain, so that accurate strain regime can not be embodied
With level.In addition, the strain sensing technology based on graphene, cannot achieve non-etc. in flexible base material and structural plane at present
The Decoupling Analysis of biaxial strain, it is difficult to meet the needs of engineering.
Summary of the invention
In view of this, the purpose of the present invention is to provide strain detecting method and apparatus two-way in the face of graphene, with aobvious
Micro- Raman technology is measurement means, realizes the two-way strain non-destructive testing of tested graphene sample, is suitable for grapheme material table
Two components of strain in the face of face micro/nano-scale, and in opposite carry out accurate decomposition measurement.
In a first aspect, the embodiment of the invention provides strain detecting methods two-way in the face of graphene, which comprises
It obtains tested graphene sample and back scattering polarizes Raman system；
It sets the tested graphene sample and polarizes the sample coordinate system under Raman system in the back scattering；
The parameter of the tested graphene sample is obtained, the parameter includes crystal orientation angle, principal strain angle, phonon deformation gesture system
It counts and without the strain peak G Raman frequency shift；
Set the incident light polarization angle and scatter light polarization angle of the back scattering polarization Raman system, wherein the incidence
Light polarization angle includes the first incident light polarization angle and the second incident light polarization angle, and the scatter light polarization angle includes the first scattering light
The angle of polarization and the second scatter light polarization angle；
Set the measured point of the tested graphene sample；
Raman system is polarized using the back scattering, institute is obtained with the incident light polarization angle and the scatter light polarization angle
State the peak the G Raman frequency shift increment of measured point, wherein obtain with first incident light polarization angle and first scatter light polarization angle
The peak the G Raman frequency shift increment of the measured point taken is the first peak G Raman frequency shift increment, with second incident light polarization
The peak the G Raman frequency shift increment for the measured point that angle and second scatter light polarization angle obtain is the 2nd peak G Raman frequency
Move increment；
According between the peak the G Raman frequency shift increment and the first principal strain and the second principal strain linear relationship, it is described enter
Penetrate light polarization angle, the scatter light polarization angle, phonon deformation gesture coefficient, it is described without the strain peak G Raman frequency shift, it is described tested
The peak the G Raman frequency shift increment of point, obtains first principal strain and second principal strain；
Wherein, first principal strain is not less than second principal strain, and the crystal orientation angle is the tested graphene sample
Azimuth of the crystal orientation of product under the sample coordinate system, the principal strain angle are first principal strain in the sample coordinate
Azimuth under system, the incident light polarization angle are that the incident light of back scattering polarization Raman system is polarized direction in the sample
Azimuth under product coordinate system, the scatter light polarization angle are that the scattering light analyzing direction of back scattering polarization Raman system exists
Azimuth under the sample coordinate system.
Second aspect, the embodiment of the invention provides two-way strain-Sensing device in the face of graphene, described device includes:
Sample coordinate system acquiring unit, for obtaining tested graphene sample, back scattering polarizes Raman system and described
Tested graphene sample polarizes the sample coordinate system under Raman system in the back scattering；
Sample parameter acquiring unit, for obtaining the parameter of the tested graphene sample, the parameter include crystal orientation angle,
Principal strain angle, phonon deform gesture coefficient and without the strain peak G Raman frequency shifts；
Parameter setup unit is detected, for setting incident light polarization angle and the scattering light of the back scattering polarization Raman system
The angle of polarization, wherein the incident light polarization angle includes the first incident light polarization angle and the second incident light polarization angle, the scattering light
The angle of polarization includes the first scatter light polarization angle and the second scatter light polarization angle；
Sample measured point setup unit, for setting the measured point of the tested graphene sample；
Frequency displacement increment acquiring unit, for polarizing Raman system using the back scattering, with the incident light polarization angle and
The scatter light polarization angle obtains the peak the G Raman frequency shift increment of the measured point, wherein with first incident light polarization angle and
The peak the G Raman frequency shift increment for the measured point that first scatter light polarization angle obtains is the increasing of the first peak G Raman frequency shift
Amount, with the peak the G Raman for the measured point that second incident light polarization angle and second scatter light polarization angle obtain
Frequency displacement increment is the 2nd peak G Raman frequency shift increment；
Principal strain acquiring unit, for according to the peak the G Raman frequency shift increment and the first principal strain and the second principal strain it
Between linear relationship, the incident light polarization angle, the scatter light polarization angle, the phonon deformation gesture coefficient, it is described without strain G
Peak Raman frequency shift, the measured point the peak the G Raman frequency shift increment, obtain first principal strain and it is described second master answer
Become；
Wherein, first principal strain is not less than second principal strain, and the crystal orientation angle is the tested graphene sample
Azimuth of the crystal orientation of product under the sample coordinate system, the principal strain angle are first principal strain in the sample coordinate
Azimuth under system, the incident light polarization angle are that the incident light of back scattering polarization Raman system is polarized direction in the sample
Azimuth under product coordinate system, the scatter light polarization angle are that the scattering light analyzing direction of back scattering polarization Raman system exists
Azimuth under the sample coordinate system.
The embodiment of the invention provides strain detecting method and apparatus two-way in the face of graphene, comprising: obtains tested stone
Black alkene sample and back scattering polarize Raman system；Tested graphene sample is set to sit in the sample that back scattering polarizes under Raman system
Mark system；It obtains the parameter of tested graphene sample, including crystal orientation angle, principal strain angle, phonon deformation gesture coefficient and is drawn without the strain peak G
Graceful frequency displacement；Set the incident light polarization angle and scatter light polarization angle of back scattering polarization Raman system, wherein incident light polarization angle packet
The first incident light polarization angle and the second incident light polarization angle are included, scatter light polarization angle includes that the first scatter light polarization angle and second dissipate
Penetrate light polarization angle；Set the measured point of tested graphene sample；Raman system is polarized using back scattering, with incident light polarization angle and
The peak the G Raman frequency shift increment of scatter light polarization angle acquisition measured point, wherein inclined with the first incident light polarization angle and the first scattering light
The peak the G Raman frequency shift increment of measured point that angle obtains of shaking is the first peak G Raman frequency shift increment, with the second incident light polarization angle and the
The peak the G Raman frequency shift increment for the measured point that two scatter light polarization angles obtain is the 2nd peak G Raman frequency shift increment；According to the peak G Raman
Linear relationship, incident light polarization angle between frequency displacement increment and the first principal strain and the second principal strain, scatter light polarization angle, phonon
Gesture coefficient, the peak the G Raman frequency shift increment without the strain peak G Raman frequency shift, measured point are deformed, the first principal strain is obtained and the second master answers
Become；Using Micro Raman as measurement means, realizes the two-way strain non-destructive testing of tested graphene sample, be suitable for graphene
Two components of strain in the face of material surface micro/nano-scale, and in opposite carry out accurate decomposition measurement.
Other features and advantages of the present invention will illustrate in the following description, also, partly become from specification
It obtains it is clear that understand through the implementation of the invention.The objectives and other advantages of the invention are in specification, claims
And specifically noted structure is achieved and obtained in attached drawing.
To enable the above objects, features and advantages of the present invention to be clearer and more comprehensible, preferred embodiment is cited below particularly, and cooperate
Appended attached drawing, is described in detail below.
Detailed description of the invention
It, below will be to specific in order to illustrate more clearly of the specific embodiment of the invention or technical solution in the prior art
Embodiment or attached drawing needed to be used in the description of the prior art be briefly described, it should be apparent that, it is described below
Attached drawing is some embodiments of the present invention, for those of ordinary skill in the art, before not making the creative labor
It puts, is also possible to obtain other drawings based on these drawings.
Fig. 1 is two-way strain detecting method flow diagram in the face for the graphene that the embodiment of the present invention one provides；
Fig. 2 is two-way strain detecting schematic illustration in the face for the graphene that the embodiment of the present invention one provides；
Fig. 3 is two-way strain-Sensing device schematic diagram in the face of graphene provided by Embodiment 2 of the present invention.
Icon:
1- is tested graphene sample；2- back scattering polarizes Raman system；10- sample coordinate system acquiring unit；20- sample ginseng
Measure acquiring unit；30- detects parameter setup unit；40- sample measured point setup unit；50- frequency displacement increment acquiring unit；60-
Principal strain acquiring unit.
Specific embodiment
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below in conjunction with attached drawing to the present invention
Technical solution be clearly and completely described, it is clear that described embodiments are some of the embodiments of the present invention, rather than
Whole embodiments.Based on the embodiments of the present invention, those of ordinary skill in the art are not making creative work premise
Under every other embodiment obtained, shall fall within the protection scope of the present invention.
To be described in detail to the embodiment of the present invention below convenient for understanding the present embodiment.
Embodiment one:
Fig. 1 is two-way strain detecting method flow diagram in the face for the graphene that the embodiment of the present invention one provides.
Referring to Fig.1, method includes the following steps:
Step S1, obtains tested graphene sample and back scattering polarizes Raman system；
Step S2 sets tested graphene sample in back scattering and polarizes the sample coordinate system under Raman system；
Specifically, referring to Fig. 2, being tested graphene sample 1 is single layer single crystal graphene, Zigzag (zigzag direction) and
Armchair (armchair direction) constitutes crystal coordinates system, wherein Zigzag is X-axis (horizontal axis), and Armchair is that Y-axis is (vertical
Axis).
Tested graphene sample 1 is in two to strain regime, and two principal strains use ε respectively1And ε2It indicates, wherein ε1It is
One principal strain, ε2For the second principal strain.Along ε1And ε2Direction establish sample coordinate system X ' and Y ' axis, as in Fig. 2 X ' and Y '
Shown in axis.
Azimuth of the crystal orientation X-axis of tested graphene sample 1 under sample coordinate system X ' axis is crystal orientation angleBack scattering is inclined
Raman system 2 of shaking uses backscattering measurement pattern, the i.e. optical axis coincidence of incident light and collected scattering light；Back scattering polarization is drawn
The incident light of graceful system 2 is polarized direction eiAzimuth under sample coordinate system is incident light polarization angle θ, and back scattering polarizes Raman
The scattering light analyzing direction e of system 2sAzimuth under sample coordinate system is scatter light polarization angle γ, wherein θ and γ can be with
It is adjusted.
In addition, can be measured by polarizing Raman system 2 by back scattering by two of tested 1 micro-meter scale measuring point of graphene sample
Principal strain component ε1And ε2, and the full-field distribution of each components of strain in film micro area can be measured using scanning mode, to solve
The components of strain for the micro-meter scale measuring point being difficult to realize measure, and realize measurement of the graphene two to the components of strain.
Step S3, obtains the parameter of tested graphene sample, and parameter includes crystal orientation angle, principal strain angle, phonon deformation gesture system
It counts and without the strain peak G Raman frequency shift；
Step S4, the incident light polarization angle and scatter light polarization angle of setting back scattering polarization Raman system, wherein incident light
The angle of polarization includes the first incident light polarization angle and the second incident light polarization angle, and scatter light polarization angle includes the first scatter light polarization angle
With the second scatter light polarization angle；
Step S5, sets the measured point of tested graphene sample, Raman system is polarized using back scattering, with incident light polarization
Angle and scatter light polarization angle obtain the peak the G Raman frequency shift increment of the measured point, wherein with the first incident light polarization angle and first
The peak the G Raman frequency shift increment for the measured point that scatter light polarization angle obtains is the first peak G Raman frequency shift increment, inclined with the second incident light
The peak the G Raman frequency shift increment for the measured point that vibration angle and the second scatter light polarization angle obtain is the 2nd peak G Raman frequency shift increment；
Step S6, according to the linear relationship between the peak G Raman frequency shift increment and the first principal strain and the second principal strain, incidence
Light polarization angle, scatter light polarization angle, phonon deformation gesture coefficient, the peak the G Raman frequency shift without the strain peak G Raman frequency shift, measured point increase
Amount, obtains the first principal strain and the second principal strain；
Wherein, the first principal strain is not less than the second principal strain, and crystal orientation angle is that the crystal orientation of tested graphene sample is sat in sample
Azimuth under mark system, principal strain angle are azimuth of first principal strain under sample coordinate system, and incident light polarization angle is that back dissipates
The incident light for penetrating polarization Raman system is polarized azimuth of the direction under sample coordinate system, and scatter light polarization angle is back scattering polarization
Azimuth of the scattering light analyzing direction of Raman system under sample coordinate system.
Further, the linear relationship between the peak the G Raman frequency shift increment and the first principal strain and the second principal strain is logical
Cross formula (1) realization:
Wherein,For crystal orientation angle, Λ, Γ are that phonon deforms gesture coefficient, and θ is incident light polarization angle, and γ is scatter light polarization
Angle, ω0For without the strain peak G Raman frequency shift, Δ ω is the peak the G Raman frequency shift increment of measured point, ε1For the first principal strain, ε2It is
Two principal strains.
Specifically, by between the available peak the G Raman frequency shift increment of formula (1) and the first principal strain and the second principal strain
Linear relationship, the detection method need for same class be tested graphene sample surface and same back scattering polarize Raman system
System is lower to be obtained by calibration experiment, to improve the accuracy of detection.
Further, step S6 includes:
The first principal strain and the second principal strain are calculated according to formula (2):
Wherein,For crystal orientation angle, Λ, Γ are that phonon deforms gesture coefficient, ω0For without the strain peak G Raman frequency shift, Δ ω1It is
One peak G Raman frequency shift increment, Δ ω2For the 2nd peak G Raman frequency shift increment, θ1For the first incident light polarization angle, θ2For the second incidence
Light polarization angle, γ1For the first scatter light polarization angle, γ2For the second scatter light polarization angle, ε1For the first principal strain, ε2It is main for second
Strain.
Here, whenAndIt substitutes into formula (2), characterizes the first principal strain ε1
With the second principal strain ε2。
Further, this method further includes:
If setting the first incident light polarization angle θ1With the first scatter light polarization angle γ1For θ1=γ1AndSecond incident light polarization angle θ2With the second scatter light polarization angle γ2For θ2=γ2AndThen the strain decoupling expression formula of the first principal strain and the second principal strain is realized by formula (3):
Wherein, Λ, Γ are that phonon deforms gesture coefficient, ω0For without the strain peak G Raman frequency shift, Δ ω1For the first peak G Raman frequency
Move increment, Δ ω2For the 2nd peak G Raman frequency shift increment, ε1For the first principal strain, ε2For the second principal strain.
Specifically, if the first incident light polarization angle θ1With the first scatter light polarization angle γ1Meet θ1=γ1AndSecond incident light polarization angle θ2With the second scatter light polarization angle γ2Meet θ2=γ2AndAccording to the first incident light polarization angle θ1With the first scatter light polarization angle γ1The condition of satisfaction, second is incident
Light polarization angle θ2With the second scatter light polarization angle γ2The condition of satisfaction characterizes the first principal strain ε by formula (3)1It is main with second
Strain stress2。
Further, this method further includes:
If setting the first incident light polarization angle θ1With the first scatter light polarization angle γ1For γ1=θ1, the second incident light polarization
Angle θ2With the second scatter light polarization angle γ2For θ2=θ1And γ2=θ2+ 90 °, then strain solutions of the first principal strain and the second principal strain
Coupling expression formula is realized by formula (4):
Wherein,For crystal orientation angle, Λ, Γ are that phonon deforms gesture coefficient, ω0For without the strain peak G Raman frequency shift, Δ ω1It is
One peak G Raman frequency shift increment, Δ ω2For the 2nd peak G Raman frequency shift increment, θ1For the first incident light polarization angle, ε1It is answered for the first master
Become, ε2For the second principal strain.
Specifically, if the first incident light polarization angle θ1With the first scatter light polarization angle γ1Meet γ1=θ1, second is incident
Light polarization angle θ2With the second scatter light polarization angle γ2Meet θ2=θ1And γ2=θ2+ 90 °, according to the first incident light polarization angle θ1With
First scatter light polarization angle γ1The condition of satisfaction, the second incident light polarization angle θ2With the second scatter light polarization angle γ2The item of satisfaction
Part characterizes the first principal strain ε by formula (4)1With the second principal strain ε2。
The embodiment of the invention provides strain detecting methods two-way in the face of graphene, comprising: obtains tested graphene sample
Product and back scattering polarize Raman system；It sets tested graphene sample and polarizes the sample coordinate system under Raman system in back scattering；
The parameter of tested graphene sample is obtained, parameter includes crystal orientation angle, principal strain angle, phonon deformation gesture coefficient and draws without the strain peak G
Graceful frequency displacement；Set the incident light polarization angle and scatter light polarization angle of back scattering polarization Raman system, wherein incident light polarization angle packet
The first incident light polarization angle and the second incident light polarization angle are included, scatter light polarization angle includes that the first scatter light polarization angle and second dissipate
Penetrate light polarization angle；Set the measured point of tested graphene sample；Raman system is polarized using back scattering, with incident light polarization angle and
The peak the G Raman frequency shift increment of scatter light polarization angle acquisition measured point, wherein inclined with the first incident light polarization angle and the first scattering light
The peak the G Raman frequency shift increment of measured point that angle obtains of shaking is the first peak G Raman frequency shift increment, with the second incident light polarization angle and the
The peak the G Raman frequency shift increment for the measured point that two scatter light polarization angles obtain is the 2nd peak G Raman frequency shift increment；According to the peak G Raman
Linear relationship, incident light polarization angle between frequency displacement increment and the first principal strain and the second principal strain, scatter light polarization angle, phonon
Gesture coefficient, the peak the G Raman frequency shift increment without the strain peak G Raman frequency shift, measured point are deformed, the first principal strain is obtained and the second master answers
Become；Using Micro Raman as measurement means, realizes the two-way strain non-destructive testing of tested graphene sample, be suitable for graphene
Two components of strain in the face of material surface micro/nano-scale, and in opposite carry out accurate decomposition measurement.In addition, based on the present invention
Content can realize in flexible material and structural plane two Decoupling Analysis to strain using graphene as sensing media.
Embodiment two:
Fig. 3 is two-way strain-Sensing device schematic diagram in the face of graphene provided by Embodiment 2 of the present invention.
Referring to Fig. 3, which includes:
Sample coordinate system acquiring unit 10, for obtain tested graphene sample, back scattering polarization Raman system and by
It surveys graphene sample and polarizes the sample coordinate system under Raman system in back scattering；
Sample parameter acquiring unit 20, for obtaining the parameter of tested graphene sample, parameter includes crystal orientation angle, principal strain
Angle, phonon deform gesture coefficient and without the strain peak G Raman frequency shifts；
Parameter setup unit 30 is detected, the incident light polarization angle and scattering light for setting back scattering polarization Raman system are inclined
Shake angle, and wherein incident light polarization angle includes the first incident light polarization angle and the second incident light polarization angle, scatter light polarization angle include
First scatter light polarization angle and the second scatter light polarization angle；
Sample measured point setup unit 40, for setting the measured point of tested graphene sample；
Frequency displacement increment acquiring unit 50, for polarizing Raman system using back scattering, with incident light polarization angle and scattering light
The peak the G Raman frequency shift increment of angle of polarization acquisition measured point, wherein obtained with the first incident light polarization angle and the first scatter light polarization angle
The peak the G Raman frequency shift increment of the measured point taken is the first peak G Raman frequency shift increment, is scattered with the second incident light polarization angle and second
The peak the G Raman frequency shift increment for the measured point that light polarization angle obtains is the 2nd peak G Raman frequency shift increment；
Principal strain acquiring unit 60, for according between the peak G Raman frequency shift increment and the first principal strain and the second principal strain
Linear relationship, incident light polarization angle, scatter light polarization angle, phonon deformation gesture coefficient, without strain the peak G Raman frequency shift, measured point
The peak G Raman frequency shift increment, obtain the first principal strain and the second principal strain；
Wherein, the first principal strain is not less than the second principal strain, and crystal orientation angle is that the crystal orientation of tested graphene sample is sat in sample
Azimuth under mark system, principal strain angle are azimuth of first principal strain under sample coordinate system, and incident light polarization angle is that back dissipates
The incident light for penetrating polarization Raman system is polarized azimuth of the direction under sample coordinate system, and scatter light polarization angle is back scattering polarization
Azimuth of the scattering light analyzing direction of Raman system under sample coordinate system.
Further, the linear relationship between the peak G Raman frequency shift increment and the first principal strain and the second principal strain passes through public affairs
Formula (1) is realized.
Further, principal strain acquiring unit 60 is specifically used for: calculating the first principal strain according to formula (2) and the second master answers
Become.
Further, the device further include:
First setup unit (not shown), for setting the first incident light polarization angle θ1With the first scatter light polarization angle γ1For
θ1=γ1AndSecond incident light polarization angle θ2With the second scatter light polarization angle γ2For θ2=γ2AndThen the strain decoupling expression formula of the first principal strain and second principal strain is realized by formula (3).
Further, the device further include:
Second setup unit (not shown), for setting the first incident light polarization angle θ1With the first scatter light polarization angle γ1For
γ1=θ1, the second incident light polarization angle θ2With the second scatter light polarization angle γ2For θ2=θ1And γ2=θ2+ 90 °, then the first master answers
Become and the strain of the second principal strain decoupling expression formula is realized by formula (4).
The embodiment of the invention provides two-way strain-Sensing devices in the face of graphene, comprising: obtains tested graphene sample
Product and back scattering polarize Raman system；It sets tested graphene sample and polarizes the sample coordinate system under Raman system in back scattering；
The parameter of tested graphene sample is obtained, parameter includes crystal orientation angle, principal strain angle, phonon deformation gesture coefficient and draws without the strain peak G
Graceful frequency displacement；Set the incident light polarization angle and scatter light polarization angle of back scattering polarization Raman system, wherein incident light polarization angle packet
The first incident light polarization angle and the second incident light polarization angle are included, scatter light polarization angle includes that the first scatter light polarization angle and second dissipate
Penetrate light polarization angle；Set the measured point of tested graphene sample；Raman system is polarized using back scattering, with incident light polarization angle and
The peak the G Raman frequency shift increment of scatter light polarization angle acquisition measured point, wherein inclined with the first incident light polarization angle and the first scattering light
The peak the G Raman frequency shift increment of measured point that angle obtains of shaking is the first peak G Raman frequency shift increment, with the second incident light polarization angle and the
The peak the G Raman frequency shift increment for the measured point that two scatter light polarization angles obtain is the 2nd peak G Raman frequency shift increment；According to the peak G Raman
Linear relationship, incident light polarization angle between frequency displacement increment and the first principal strain and the second principal strain, scatter light polarization angle, phonon
Gesture coefficient, the peak the G Raman frequency shift increment without the strain peak G Raman frequency shift, measured point are deformed, the first principal strain is obtained and the second master answers
Become；Using Micro Raman as measurement means, realizes the two-way strain non-destructive testing of tested graphene sample, be suitable for graphene
Two components of strain in the face of material surface micro/nano-scale, and in opposite carry out accurate decomposition measurement.In addition, based on the present invention
Content can realize in flexible material and structural plane two Decoupling Analysis to strain using graphene as sensing media.
The embodiment of the present invention also provides a kind of electronic equipment, including memory, processor and storage are on a memory and can
The computer program run on a processor, processor realize graphene provided by the above embodiment when executing computer program
In face the step of two-way strain detecting method.
The embodiment of the present invention also provides a kind of computer readable storage medium, and meter is stored on computer readable storage medium
Calculation machine program executes two-way strain detecting method in the face of the graphene of above-described embodiment when computer program is run by processor
The step of.
Computer program product provided by the embodiment of the present invention, the computer-readable storage including storing program code
Medium, the instruction that said program code includes can be used for executing previous methods method as described in the examples, and specific implementation can be joined
See embodiment of the method, details are not described herein.
It is apparent to those skilled in the art that for convenience and simplicity of description, the system of foregoing description
It with the specific work process of device, can refer to corresponding processes in the foregoing method embodiment, details are not described herein.
In addition, in the description of the embodiment of the present invention unless specifically defined or limited otherwise, term " installation ", " phase
Even ", " connection " shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or be integrally connected；It can
To be mechanical connection, it is also possible to be electrically connected；It can be directly connected, can also can be indirectly connected through an intermediary
Connection inside two elements.For the ordinary skill in the art, above-mentioned term can be understood at this with concrete condition
Concrete meaning in invention.
It, can be with if the function is realized in the form of SFU software functional unit and when sold or used as an independent product
It is stored in a computer readable storage medium.Based on this understanding, technical solution of the present invention is substantially in other words
The part of the part that contributes to existing technology or the technical solution can be embodied in the form of software products, the meter
Calculation machine software product is stored in a storage medium, including some instructions are used so that a computer equipment (can be a
People's computer, server or network equipment etc.) it performs all or part of the steps of the method described in the various embodiments of the present invention.
And storage medium above-mentioned includes: that USB flash disk, mobile hard disk, read-only memory (ROM, Read-Only Memory), arbitrary access are deposited
The various media that can store program code such as reservoir (RAM, Random Access Memory), magnetic or disk.
In the description of the present invention, it should be noted that term " center ", "upper", "lower", "left", "right", "vertical",
The orientation or positional relationship of the instructions such as "horizontal", "inner", "outside" be based on the orientation or positional relationship shown in the drawings, merely to
Convenient for description the present invention and simplify description, rather than the device or element of indication or suggestion meaning must have a particular orientation,
It is constructed and operated in a specific orientation, therefore is not considered as limiting the invention.In addition, term " first ", " second ",
" third " is used for descriptive purposes only and cannot be understood as indicating or suggesting relative importance.
Finally, it should be noted that embodiment described above, only a specific embodiment of the invention, to illustrate the present invention
Technical solution, rather than its limitations, scope of protection of the present invention is not limited thereto, although with reference to the foregoing embodiments to this hair
It is bright to be described in detail, those skilled in the art should understand that: anyone skilled in the art
In the technical scope disclosed by the present invention, it can still modify to technical solution documented by previous embodiment or can be light
It is readily conceivable that variation or equivalent replacement of some of the technical features；And these modifications, variation or replacement, do not make
The essence of corresponding technical solution is detached from the spirit and scope of technical solution of the embodiment of the present invention, should all cover in protection of the invention
Within the scope of.Therefore, protection scope of the present invention should be based on the protection scope of the described claims.
Claims (10)
1. a kind of two-way strain detecting method in face of graphene, which is characterized in that the described method includes:
It obtains tested graphene sample and back scattering polarizes Raman system；
It sets the tested graphene sample and polarizes the sample coordinate system under Raman system in the back scattering；
Obtain the parameter of the tested graphene sample, the parameter include crystal orientation angle, principal strain angle, phonon deformation gesture coefficient and
Without the strain peak G Raman frequency shift；
Set the incident light polarization angle and scatter light polarization angle of the back scattering polarization Raman system, wherein the incident light is inclined
Vibration angle includes the first incident light polarization angle and the second incident light polarization angle, and the scatter light polarization angle includes the first scatter light polarization
Angle and the second scatter light polarization angle；
Set the measured point of the tested graphene sample；
Raman system is polarized using the back scattering, the quilt is obtained with the incident light polarization angle and the scatter light polarization angle
The peak the G Raman frequency shift increment of measuring point, wherein obtained with first incident light polarization angle and first scatter light polarization angle
The peak the G Raman frequency shift increment of the measured point is the first peak G Raman frequency shift increment, with second incident light polarization angle and
The peak the G Raman frequency shift increment for the measured point that second scatter light polarization angle obtains is the increasing of the 2nd peak G Raman frequency shift
Amount；
According to the linear relationship between the peak the G Raman frequency shift increment and the first principal strain and the second principal strain, the incident light
It is the angle of polarization, the scatter light polarization angle, phonon deformation gesture coefficient, described without the strain peak G Raman frequency shift, the measured point
The peak the G Raman frequency shift increment, obtains first principal strain and second principal strain；
Wherein, first principal strain is not less than second principal strain, and the crystal orientation angle is the tested graphene sample
Azimuth of the crystal orientation under the sample coordinate system, the principal strain angle are first principal strain under the sample coordinate system
Azimuth, the incident light polarization angle is that the back scattering polarizes the incident light of Raman system and is polarized direction and sits in the sample
Azimuth under mark system, the scatter light polarization angle are that the back scattering polarizes the scattering light analyzing direction of Raman system described
Azimuth under sample coordinate system.
2. two-way strain detecting method in the face of graphene according to claim 1, which is characterized in that the peak G Raman
Linear relationship between frequency displacement increment and first principal strain and second principal strain is realized by following formula:
Wherein,For the crystal orientation angle, Λ, Γ are that the phonon deforms gesture coefficient, and θ is the incident light polarization angle, and γ is described
Scatter light polarization angle, ω0To be described without the strain peak G Raman frequency shift, Δ ω is the peak the G Raman frequency shift increment of the measured point, ε1For
First principal strain, ε2For second principal strain.
3. two-way strain detecting method in the face of graphene according to claim 2, which is characterized in that described according to
Linear relationship, the incident light polarization angle between the peak G Raman frequency shift increment and the first principal strain and the second principal strain described dissipate
Penetrate light polarization angle, phonon deformation gesture coefficient, the peak the G Raman frequency without the strain peak G Raman frequency shift, the measured point
Increment is moved, first principal strain is obtained and second principal strain includes:
First principal strain and second principal strain are calculated according to the following formula:
Wherein,For the crystal orientation angle, Λ, Γ are that the phonon deforms gesture coefficient, ω0For it is described without strain the peak G Raman frequency shift,
Δω1For the first peak G Raman frequency shift increment, Δ ω2For the 2nd peak G Raman frequency shift increment, θ1It is incident for described first
Light polarization angle, θ2For second incident light polarization angle, γ1For first scatter light polarization angle, γ2For second scattering
Light polarization angle, ε1For first principal strain, ε2For second principal strain.
4. two-way strain detecting method in the face of graphene according to claim 1, which is characterized in that the method is also wrapped
It includes:
If setting first incident light polarization angle θ1With first scatter light polarization angle γ1For θ1=γ1AndSecond incident light polarization angle θ2With second scatter light polarization angle γ2For θ2=γ2AndThen the strain decoupling expression formula of first principal strain and second principal strain passes through following formula reality
It is existing:
Wherein, Λ, Γ are that the phonon deforms gesture coefficient, ω0To be described without the strain peak G Raman frequency shift, Δ ω1For the first G
Peak Raman frequency shift increment, Δ ω2For the 2nd peak G Raman frequency shift increment, ε1For first principal strain, ε2It is described second
Principal strain.
5. two-way strain detecting method in the face of graphene according to claim 1, which is characterized in that the method is also wrapped
It includes:
If setting first incident light polarization angle θ1With first scatter light polarization angle γ1For γ1=θ1, it is described second incident
Light polarization angle θ2With second scatter light polarization angle γ2For θ2=θ1And γ2=θ2+ 90 °, then first principal strain and described
The strain decoupling expression formula of second principal strain is realized by following formula:
Wherein,For the crystal orientation angle, Λ, Γ are that the phonon deforms gesture coefficient, ω0For it is described without strain the peak G Raman frequency shift,
Δω1For the first peak G Raman frequency shift increment, Δ ω2For the 2nd peak G Raman frequency shift increment, θ1It is incident for described first
Light polarization angle, ε1For first principal strain, ε2For second principal strain.
6. two-way strain-Sensing device in a kind of face of graphene, which is characterized in that described device includes:
Sample coordinate system acquiring unit, for obtaining tested graphene sample, back scattering polarizes Raman system and described tested
Graphene sample polarizes the sample coordinate system under Raman system in the back scattering；
Sample parameter acquiring unit, for obtaining the parameter of the tested graphene sample, the parameter includes crystal orientation angle, leads and answer
Angle, phonon deform gesture coefficient and without the strain peak G Raman frequency shifts；
Parameter setup unit is detected, for setting incident light polarization angle and the scatter light polarization of the back scattering polarization Raman system
Angle, wherein the incident light polarization angle includes the first incident light polarization angle and the second incident light polarization angle, the scatter light polarization
Angle includes the first scatter light polarization angle and the second scatter light polarization angle；
Sample measured point setup unit, for setting the measured point of the tested graphene sample；
Frequency displacement increment acquiring unit, for polarizing Raman system using the back scattering, with the incident light polarization angle and described
Scatter light polarization angle obtains the peak the G Raman frequency shift increment of the measured point, wherein with first incident light polarization angle and described
The peak the G Raman frequency shift increment for the measured point that first scatter light polarization angle obtains is the first peak G Raman frequency shift increment, with
The peak the G Raman frequency shift for the measured point that second incident light polarization angle and second scatter light polarization angle obtain increases
Amount is the 2nd peak G Raman frequency shift increment；
Principal strain acquiring unit, for according between the peak the G Raman frequency shift increment and the first principal strain and the second principal strain
Linear relationship, the incident light polarization angle, the scatter light polarization angle, the phonon deform gesture coefficient, are described without the drawing of the strain peak G
Graceful frequency displacement, the measured point the peak the G Raman frequency shift increment, obtain first principal strain and second principal strain；
Wherein, first principal strain is not less than second principal strain, and the crystal orientation angle is the tested graphene sample
Azimuth of the crystal orientation under the sample coordinate system, the principal strain angle are first principal strain under the sample coordinate system
Azimuth, the incident light polarization angle is that the back scattering polarizes the incident light of Raman system and is polarized direction and sits in the sample
Azimuth under mark system, the scatter light polarization angle are that the back scattering polarizes the scattering light analyzing direction of Raman system described
Azimuth under sample coordinate system.
7. two-way strain-Sensing device in the face of graphene according to claim 6, which is characterized in that the peak G Raman
Linear relationship between frequency displacement increment and first principal strain and second principal strain is realized by following formula:
Wherein,For the crystal orientation angle, Λ, Γ are that the phonon deforms gesture coefficient, and θ is the incident light polarization angle, and γ is described
Scatter light polarization angle, ω0To be described without the strain peak G Raman frequency shift, Δ ω is the peak the G Raman frequency shift increment of the measured point, ε1For
First principal strain, ε2For second principal strain.
8. two-way strain-Sensing device in the face of graphene according to claim 7, which is characterized in that the principal strain obtains
Unit is taken to be specifically used for:
First principal strain and second principal strain are calculated according to the following formula:
Wherein,For the crystal orientation angle, Λ, Γ are that the phonon deforms gesture coefficient, ω0For it is described without strain the peak G Raman frequency shift,
Δω1For the first peak G Raman frequency shift increment, Δ ω2For the 2nd peak G Raman frequency shift increment, θ1It is incident for described first
Light polarization angle, θ2For second incident light polarization angle, γ1For first scatter light polarization angle, γ2For second scattering
Light polarization angle, ε1For first principal strain, ε2For second principal strain.
9. two-way strain-Sensing device in the face of graphene according to claim 6, which is characterized in that described device is also wrapped
It includes:
First setup unit, for setting first incident light polarization angle θ1With first scatter light polarization angle γ1For θ1=
γ1AndSecond incident light polarization angle θ2With second scatter light polarization angle γ2For θ2=γ2AndThen the strain decoupling expression formula of first principal strain and second principal strain passes through following formula reality
It is existing:
Wherein, Λ, Γ are that the phonon deforms gesture coefficient, ω0To be described without the strain peak G Raman frequency shift, Δ ω1For the first G
Peak Raman frequency shift increment, Δ ω2For the 2nd peak G Raman frequency shift increment, ε1For first principal strain, ε2It is described second
Principal strain.
10. two-way strain-Sensing device in the face of graphene according to claim 6, which is characterized in that described device is also
Include:
Second setup unit, for setting first incident light polarization angle θ1With first scatter light polarization angle γ1For γ1
=θ1, second incident light polarization angle θ2With second scatter light polarization angle γ2For θ2=θ1And γ2=θ2+ 90 °, then institute
The strain decoupling expression formula for stating the first principal strain and second principal strain is realized by following formula:
Wherein,For the crystal orientation angle, Λ, Γ are that the phonon deforms gesture coefficient, ω0For it is described without strain the peak G Raman frequency shift,
Δω1For the first peak G Raman frequency shift increment, Δ ω2For the 2nd peak G Raman frequency shift increment, θ1It is incident for described first
Light polarization angle, ε1For first principal strain, ε2For second principal strain.
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