CN110333222B - Method and device for detecting in-plane bidirectional strain of graphene - Google Patents
Method and device for detecting in-plane bidirectional strain of graphene Download PDFInfo
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Abstract
The invention provides a method and a device for detecting in-plane bidirectional strain of graphene, which comprise the following steps: obtaining a graphene sample to be detected and a backscattering polarization Raman system; setting a sample coordinate system of a detected graphene sample under a backscattering polarization Raman system; obtaining a crystal orientation angle, a main strain angle, a phonon deformation potential coefficient and a strain-free G peak Raman frequency shift of a detected graphene sample; setting the polarization angle of incident light and the polarization angle of scattered light; setting a measured point of a measured graphene sample; a backscattering polarization Raman system is adopted to regulate and control the polarization angle of incident light and the polarization angle of scattered light so as to obtain the G peak Raman frequency shift increment of the measured point; obtaining a first principal strain and a second principal strain according to the linear relation between the G peak Raman frequency shift increment and the first principal strain and the second principal strain, the polarization angle of incident light, the polarization angle of scattered light, the phonon deformation potential coefficient, the strain-free G peak Raman frequency shift and the G peak Raman frequency shift increment of a measured point; therefore, nondestructive accurate measurement of the in-plane bidirectional strain of the detected graphene sample is realized.
Description
Technical Field
The invention relates to the technical field of mechanical measurement, in particular to a method and a device for detecting in-plane bidirectional strain of graphene.
Background
With the development of science and technology in the micro-nano field in recent years, research on the performance of materials and devices at the micro-nano scale has become a leading field of common attention of multiple disciplines. Graphene as a two-dimensional nano material has excellent optical, electrical and mechanical properties, has important application prospects in the aspects of materials science, micro-nano processing, energy and the like, and mechanical parameters such as strain have important influences on the electronic structure characteristics and the application of the graphene. Therefore, the research of a new technology and a new method for nondestructive detection and characterization of relevant mechanical parameters of graphene at micro-scale and nano-scale is developed to accurately master information such as strain state, distribution and the like of the graphene, so that the method becomes an urgent need for the development of the field and has important scientific significance and application value.
At present, only mechanical parameters such as strain of a graphene sample in a unidirectional strain state or an equibiaxial strain state can be measured by a Raman strain measurement technology. However, for graphene samples in a bidirectional strain state, the existing raman strain measurement technology cannot realize decoupling measurement of in-plane unequal biaxial bidirectional strain, so that accurate strain state and level cannot be embodied. In addition, the strain sensing technology based on graphene cannot realize decoupling analysis of unequal biaxial strain between the flexible substrate material and the structural plane at present, and is difficult to meet engineering requirements.
Disclosure of Invention
In view of the above, the present invention aims to provide a method and an apparatus for in-plane bidirectional strain detection of graphene, which use a micro-raman technique as a measurement means to realize bidirectional strain nondestructive detection of a detected graphene sample, are suitable for use in a micro-nano scale plane of a surface of a graphene material, and perform precise decoupling measurement on two in-plane strain components.
In a first aspect, an embodiment of the present invention provides a method for detecting in-plane bidirectional strain of graphene, where the method includes:
obtaining a graphene sample to be detected and a backscattering polarization Raman system;
setting a sample coordinate system of the detected graphene sample under the backscattering polarization Raman system;
obtaining parameters of the detected graphene sample, wherein the parameters comprise a crystal orientation angle, a main strain angle, a phonon deformation potential coefficient and a strain-free G peak Raman frequency shift;
setting an incident light polarization angle and a scattered light polarization angle of the backscattering polarization Raman system, wherein the incident light polarization angle comprises a first incident light polarization angle and a second incident light polarization angle, and the scattered light polarization angle comprises a first scattered light polarization angle and a second scattered light polarization angle;
setting a measured point of the measured graphene sample;
acquiring a G peak Raman frequency shift increment of the measured point by using the backscattering polarization Raman system according to the incident light polarization angle and the scattered light polarization angle, wherein the G peak Raman frequency shift increment of the measured point acquired according to the first incident light polarization angle and the first scattered light polarization angle is a first G peak Raman frequency shift increment, and the G peak Raman frequency shift increment of the measured point acquired according to the second incident light polarization angle and the second scattered light polarization angle is a second G peak Raman frequency shift increment;
obtaining the first principal strain and the second principal strain according to the linear relation between the G peak Raman frequency shift increment and the first principal strain and the second principal strain, the polarization angle of the incident light, the polarization angle of the scattered light, the phonon deformation potential coefficient, the unstrained G peak Raman frequency shift and the G peak Raman frequency shift increment of the measured point;
the first principal strain is not less than the second principal strain, the crystal orientation angle is an azimuth angle of the crystal orientation of the measured graphene sample in the sample coordinate system, the principal strain angle is an azimuth angle of the first principal strain in the sample coordinate system, the incident light polarization angle is an azimuth angle of the incident light polarization direction of the backscattering polarization raman system in the sample coordinate system, and the scattered light polarization angle is an azimuth angle of the scattered light polarization direction of the backscattering polarization raman system in the sample coordinate system.
In a second aspect, an embodiment of the present invention provides an in-plane bidirectional strain detection apparatus for graphene, where the apparatus includes:
the sample coordinate system acquisition unit is used for acquiring a graphene sample to be detected, a backscattering polarization Raman system and a sample coordinate system of the graphene sample to be detected under the backscattering polarization Raman system;
the sample parameter acquisition unit is used for acquiring parameters of the detected graphene sample, wherein the parameters comprise a crystal orientation angle, a main strain angle, a phonon deformation potential coefficient and a strain-free G peak Raman frequency shift;
a detection parameter setting unit, configured to set an incident light polarization angle and a scattered light polarization angle of the backscatter polarization raman system, where the incident light polarization angle includes a first incident light polarization angle and a second incident light polarization angle, and the scattered light polarization angle includes a first scattered light polarization angle and a second scattered light polarization angle;
the sample measured point setting unit is used for setting a measured point of the measured graphene sample;
a frequency shift increment acquiring unit, configured to acquire, by using the backscatter polarization raman system, a G peak raman shift increment of the measured point by using the incident light polarization angle and the scattered light polarization angle, where the G peak raman shift increment of the measured point acquired by using the first incident light polarization angle and the first scattered light polarization angle is a first G peak raman shift increment, and the G peak raman shift increment of the measured point acquired by using the second incident light polarization angle and the second scattered light polarization angle is a second G peak raman shift increment;
a principal strain obtaining unit, configured to obtain the first principal strain and the second principal strain according to a linear relationship between the G peak raman shift increment and a first principal strain and a second principal strain, the incident light polarization angle, the scattered light polarization angle, the phonon deformation potential coefficient, the unstrained G peak raman shift, and the G peak raman shift increment of the measured point;
the first principal strain is not less than the second principal strain, the crystal orientation angle is an azimuth angle of the crystal orientation of the measured graphene sample in the sample coordinate system, the principal strain angle is an azimuth angle of the first principal strain in the sample coordinate system, the incident light polarization angle is an azimuth angle of the incident light polarization direction of the backscattering polarization raman system in the sample coordinate system, and the scattered light polarization angle is an azimuth angle of the scattered light polarization direction of the backscattering polarization raman system in the sample coordinate system.
The embodiment of the invention provides a method and a device for detecting in-plane bidirectional strain of graphene, which comprise the following steps: obtaining a graphene sample to be detected and a backscattering polarization Raman system; setting a sample coordinate system of a detected graphene sample under a backscattering polarization Raman system; obtaining parameters of a detected graphene sample, including a crystal orientation angle, a main strain angle, a phonon deformation potential coefficient and a strain-free G peak Raman frequency shift; setting an incident light polarization angle and a scattered light polarization angle of a backscattering polarization Raman system, wherein the incident light polarization angle comprises a first incident light polarization angle and a second incident light polarization angle, and the scattered light polarization angle comprises a first scattered light polarization angle and a second scattered light polarization angle; setting a measured point of a measured graphene sample; acquiring a G peak Raman frequency shift increment of a measured point by adopting a backscattering polarization Raman system according to an incident light polarization angle and a scattered light polarization angle, wherein the G peak Raman frequency shift increment of the measured point acquired according to a first incident light polarization angle and a first scattered light polarization angle is taken as a first G peak Raman frequency shift increment, and the G peak Raman frequency shift increment of the measured point acquired according to a second incident light polarization angle and a second scattered light polarization angle is taken as a second G peak Raman frequency shift increment; obtaining a first principal strain and a second principal strain according to the linear relation between the G peak Raman frequency shift increment and the first principal strain and the second principal strain, the polarization angle of incident light, the polarization angle of scattered light, the phonon deformation potential coefficient, the strain-free G peak Raman frequency shift and the G peak Raman frequency shift increment of a measured point; the method has the advantages that the microscopic Raman technology is used as a measuring means, the bidirectional strain nondestructive testing of the detected graphene sample is realized, the method is suitable for the surface of the micro-nano scale of the surface of the graphene material, and the accurate decoupling measurement is carried out on two strain components in the surface.
Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
In order to make the aforementioned and other objects, features and advantages of the present invention comprehensible, preferred embodiments accompanied with figures are described in detail below.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
Fig. 1 is a flowchart of an in-plane bidirectional strain detection method for graphene according to an embodiment of the present invention;
fig. 2 is a schematic diagram illustrating an in-plane bidirectional strain detection principle of graphene according to an embodiment of the present invention;
fig. 3 is a schematic diagram of an in-plane bidirectional strain detection apparatus for graphene according to a second embodiment of the present invention.
Icon:
1-a graphene sample to be tested; 2-a back-scattered polarization raman system; 10-a sample coordinate system acquisition unit; 20-a sample parameter acquisition unit; 30-a detection parameter setting unit; 40-sample measured point setting unit; 50-a frequency shift increment acquisition unit; 60-main strain obtaining unit.
Detailed Description
To make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings, and it is apparent that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
For the understanding of the present embodiment, the following detailed description will be given of the embodiment of the present invention.
The first embodiment is as follows:
fig. 1 is a flowchart of an in-plane bidirectional strain detection method for graphene according to an embodiment of the present invention.
Referring to fig. 1, the method includes the steps of:
step S1, obtaining a graphene sample to be detected and a backscattering polarization Raman system;
step S2, setting a sample coordinate system of the detected graphene sample under a backscattering polarization Raman system;
specifically, referring to fig. 2, a graphene sample 1 to be tested is a single-layer single-crystal graphene, and Zigzag and Armchair (Armchair direction) of the graphene sample form a crystal coordinate system, wherein Zigzag is an X axis (horizontal axis) and Armchair is a Y axis (vertical axis).
The detected graphene sample 1 is in a two-direction strain state, and two main strains are respectively used1And2it is shown that, among others,1is the first principal strain, and is,2is the second principal strain. Along the edge1And2establishes the sample coordinate system X 'and Y' axes as shown by the X 'and Y' axes in fig. 2.
The azimuth angle of the crystal orientation X axis of the detected graphene sample 1 under the X' axis of the sample coordinate system is a crystal orientation angle
The backscattering polarization Raman system 2 adopts a backscattering measurement mode, namely incident light is superposed with the optical axis of the collected scattered light; polarization direction e of incident light of the backscatter polarization raman system 2iThe azimuth angle in the sample coordinate system is the polarization angle theta of incident light, and the polarization direction e of scattered light of the back scattering polarization Raman system 2sThe azimuth angle in the sample coordinate system is the scattered light polarization angle γ, where θ and γ can be manipulated.
In addition, two main strain components of a 1-micron-scale measuring point of the measured graphene sample can be measured through the backscattering polarization Raman system 21And2and the full-field distribution of each strain component in the micro-area can be measured by adopting a scanning mode, so that the problem that the strain component measurement of micrometer-scale measuring points is difficult to realize is solved, and the measurement of the graphene bidirectional strain component is realized.
Step S3, obtaining parameters of the detected graphene sample, wherein the parameters comprise a crystal orientation angle, a main strain angle, a phonon deformation potential coefficient and a strain-free G peak Raman frequency shift;
step S4, setting an incident light polarization angle and a scattered light polarization angle of the backscatter polarization raman system, wherein the incident light polarization angle includes a first incident light polarization angle and a second incident light polarization angle, and the scattered light polarization angle includes a first scattered light polarization angle and a second scattered light polarization angle;
step S5, setting a measured point of a measured graphene sample, and acquiring a G peak Raman frequency shift increment of the measured point by using an incident light polarization angle and a scattered light polarization angle by using a back scattering polarization Raman system, wherein the G peak Raman frequency shift increment of the measured point acquired by using a first incident light polarization angle and a first scattered light polarization angle is a first G peak Raman frequency shift increment, and the G peak Raman frequency shift increment of the measured point acquired by using a second incident light polarization angle and a second scattered light polarization angle is a second G peak Raman frequency shift increment;
step S6, obtaining a first principal strain and a second principal strain according to the linear relation between the G peak Raman frequency shift increment and the first principal strain and the second principal strain, the polarization angle of incident light, the polarization angle of scattered light, the phonon deformation potential coefficient, the unstrained G peak Raman frequency shift and the G peak Raman frequency shift increment of a measured point;
the first principal strain is not less than the second principal strain, the crystal orientation angle is an azimuth angle of the crystal orientation of the detected graphene sample in a sample coordinate system, the principal strain angle is an azimuth angle of the first principal strain in the sample coordinate system, the incident light polarization angle is an azimuth angle of an incident light polarization direction of the back scattering polarization Raman system in the sample coordinate system, and the scattering light polarization angle is an azimuth angle of a scattering light polarization direction of the back scattering polarization Raman system in the sample coordinate system.
Further, the linear relationship between the G peak raman shift increment and the first and second principal strains is realized by formula (1):
wherein the content of the first and second substances,
is the crystal orientation angle, Λ is the phonon deformation potential coefficient, θ is the incident light polarization angle, γ is the scattered light polarization angle, ω is0The Raman frequency shift of the unstrained G peak is shown, delta omega is the increment of the Raman frequency shift of the G peak of the measured point,1is the first principal strain, and is,2is the second principal strain.
Specifically, the linear relationship between the G peak raman shift increment and the first principal strain and the second principal strain can be obtained by formula (1), and the detection method needs to be obtained by a calibration experiment on the same type of detected graphene sample surface and under the same backscattering polarization raman system, so that the detection accuracy is improved.
Further, step S6 includes:
calculating the first and second principal strains according to equation (2):
wherein the content of the first and second substances,
is the crystal orientation angle, Λ, is the phonon deformation potential coefficient, ω0For unstrained G-peak Raman frequency shift, Δ ω1Is the first G peak Raman frequency shift increment, Δ ω2Is the second G peak Raman frequency shift increment, θ1Is a first polarization angle of incident light, theta2Is the second incident light polarization angle, gamma1Is the first scattered light polarization angle, gamma2Is the second scattered light polarization angle,1is the first principal strain, and is,2is the second principal strain.
Here, when
And is
Substituted into equation (2) to characterize the first principal strain1And a second principal strain2。
Further, the method further comprises:
if the first incident light polarization angle theta is set1Angle of polarization gamma with the first scattered light1Is theta1＝γ1And is
Second incident light polarization angle theta2Angle of polarization gamma with the second scattered light2Is theta2＝γ2And is
The strain decoupling expression of the first principal strain and the second principal strain is implemented by equation (3):
wherein, Λ is phonon deformation potential coefficient, omega0For unstrained G-peak Raman frequency shift, Δ ω1Is the first G peak Raman frequency shift increment, Δ ω2For the second G peak raman shift increment,1is the first principal strain, and is,2is the second principal strain.
In particular, if the first incident light polarization angle θ1Angle of polarization gamma with the first scattered light1Satisfies theta1＝γ1And is
Second incident light polarization angle theta2Angle of polarization gamma with the second scattered light2Satisfies theta2＝γ2And is
According to the first incident light polarization angle theta1Angle of polarization gamma with the first scattered light1Satisfied condition, second incident light polarization angle theta2Angle of polarization gamma with the second scattered light2Satisfied condition, characterizing the first principal strain by equation (3)1And a second principal strain2。
Further, the method further comprises:
if the first incident light polarization angle theta is set1Angle of polarization gamma with the first scattered light1Is gamma1＝θ1Second incident light polarization angle theta2Angle of polarization gamma with the second scattered light2Is theta2＝θ1And gamma is2＝θ2+90 °, the strain decoupling expression for the first and second principal strains is implemented by equation (4):
wherein the content of the first and second substances,
is the crystal orientation angle, Λ, is the phonon deformation potential coefficient, ω0For unstrained G-peak Raman frequency shift, Δ ω1Is the first G peak Raman frequency shift increment, Δ ω2Is the second G peak Raman frequency shift increment, θ1Is the first angle of polarization of the incident light,1is the first principal strain, and is,2is the second principal strain.
In particular, if the first incident light polarization angle θ1Angle of polarization gamma with the first scattered light1Satisfy gamma1＝θ1Second incident light polarization angle theta2Angle of polarization gamma with the second scattered light2Satisfies theta2＝θ1And gamma is2＝θ2+90 ° according to the first incident light polarization angle θ1Angle of polarization gamma with the first scattered light1Satisfied condition, second incident light polarization angle theta2Angle of polarization gamma with the second scattered light2Satisfied condition, characterizing the first principal strain by equation (4)1And a second principal strain2。
The embodiment of the invention provides an in-plane bidirectional strain detection method for graphene, which comprises the following steps: obtaining a graphene sample to be detected and a backscattering polarization Raman system; setting a sample coordinate system of a detected graphene sample under a backscattering polarization Raman system; obtaining parameters of a detected graphene sample, wherein the parameters comprise a crystal orientation angle, a main strain angle, a phonon deformation potential coefficient and a strain-free G peak Raman frequency shift; setting an incident light polarization angle and a scattered light polarization angle of a backscattering polarization Raman system, wherein the incident light polarization angle comprises a first incident light polarization angle and a second incident light polarization angle, and the scattered light polarization angle comprises a first scattered light polarization angle and a second scattered light polarization angle; setting a measured point of a measured graphene sample; acquiring a G peak Raman frequency shift increment of a measured point by adopting a backscattering polarization Raman system according to an incident light polarization angle and a scattered light polarization angle, wherein the G peak Raman frequency shift increment of the measured point acquired according to a first incident light polarization angle and a first scattered light polarization angle is taken as a first G peak Raman frequency shift increment, and the G peak Raman frequency shift increment of the measured point acquired according to a second incident light polarization angle and a second scattered light polarization angle is taken as a second G peak Raman frequency shift increment; obtaining a first principal strain and a second principal strain according to the linear relation between the G peak Raman frequency shift increment and the first principal strain and the second principal strain, the polarization angle of incident light, the polarization angle of scattered light, the phonon deformation potential coefficient, the strain-free G peak Raman frequency shift and the G peak Raman frequency shift increment of a measured point; the method has the advantages that the microscopic Raman technology is used as a measuring means, the bidirectional strain nondestructive testing of the detected graphene sample is realized, the method is suitable for the surface of the micro-nano scale of the surface of the graphene material, and the accurate decoupling measurement is carried out on two strain components in the surface. In addition, based on the content of the invention, graphene can be used as a sensing medium, and decoupling analysis of the two-way strain in the flexible material and the structural plane is realized.
Example two:
fig. 3 is a schematic diagram of an in-plane bidirectional strain detection apparatus for graphene according to a second embodiment of the present invention.
Referring to fig. 3, the apparatus includes:
the sample coordinate system obtaining unit 10 is configured to obtain a graphene sample to be measured, a backscattering polarization raman system, and a sample coordinate system of the graphene sample to be measured in the backscattering polarization raman system;
the sample parameter acquiring unit 20 is configured to acquire parameters of the detected graphene sample, where the parameters include a crystal orientation angle, a main strain angle, a phonon deformation potential coefficient, and a strain-free G peak raman frequency shift;
a detection parameter setting unit 30 configured to set an incident light polarization angle and a scattered light polarization angle of the backscatter polarization raman system, where the incident light polarization angle includes a first incident light polarization angle and a second incident light polarization angle, and the scattered light polarization angle includes a first scattered light polarization angle and a second scattered light polarization angle;
a sample measured point setting unit 40, configured to set a measured point of a measured graphene sample;
a frequency shift increment obtaining unit 50, configured to obtain, by using a back scattering polarization raman system, a G peak raman shift increment of the measured point by using an incident light polarization angle and a scattered light polarization angle, where the G peak raman shift increment of the measured point obtained by using a first incident light polarization angle and a first scattered light polarization angle is a first G peak raman shift increment, and the G peak raman shift increment of the measured point obtained by using a second incident light polarization angle and a second scattered light polarization angle is a second G peak raman shift increment;
the main strain obtaining unit 60 is configured to obtain a first main strain and a second main strain according to a linear relationship between a G peak raman shift increment and the first main strain and the second main strain, an incident light polarization angle, a scattered light polarization angle, a phonon deformation potential coefficient, a strain-free G peak raman shift, and a G peak raman shift increment of a measured point;
the first principal strain is not less than the second principal strain, the crystal orientation angle is an azimuth angle of the crystal orientation of the detected graphene sample in a sample coordinate system, the principal strain angle is an azimuth angle of the first principal strain in the sample coordinate system, the incident light polarization angle is an azimuth angle of an incident light polarization direction of the back scattering polarization Raman system in the sample coordinate system, and the scattering light polarization angle is an azimuth angle of a scattering light polarization direction of the back scattering polarization Raman system in the sample coordinate system.
Further, the linear relationship between the G peak raman shift increment and the first and second principal strains is realized by formula (1).
Further, the main strain acquiring unit 60 is specifically configured to: the first principal strain and the second principal strain are calculated according to equation (2).
Further, the apparatus further comprises:
a first setting unit (not shown) for setting a first incident light polarization angle θ1Angle of polarization gamma with the first scattered light1Is theta1＝γ1And is
Second incident light polarization angle theta2Angle of polarization gamma with the second scattered light2Is theta2＝γ2And is
Then it is firstAnd the strain decoupling expression of the main strain and the second main strain is realized by formula (3).
Further, the apparatus further comprises:
a second setting unit (not shown) for setting the first incident light polarization angle theta1Angle of polarization gamma with the first scattered light1Is gamma1＝θ1Second incident light polarization angle theta2Angle of polarization gamma with the second scattered light2Is theta2＝θ1And gamma is2＝θ2+90 °, the strain decoupling expression of the first and second principal strains is realized by equation (4).
The embodiment of the invention provides an in-plane bidirectional strain detection device for graphene, which comprises: obtaining a graphene sample to be detected and a backscattering polarization Raman system; setting a sample coordinate system of a detected graphene sample under a backscattering polarization Raman system; obtaining parameters of a detected graphene sample, wherein the parameters comprise a crystal orientation angle, a main strain angle, a phonon deformation potential coefficient and a strain-free G peak Raman frequency shift; setting an incident light polarization angle and a scattered light polarization angle of a backscattering polarization Raman system, wherein the incident light polarization angle comprises a first incident light polarization angle and a second incident light polarization angle, and the scattered light polarization angle comprises a first scattered light polarization angle and a second scattered light polarization angle; setting a measured point of a measured graphene sample; acquiring a G peak Raman frequency shift increment of a measured point by adopting a backscattering polarization Raman system according to an incident light polarization angle and a scattered light polarization angle, wherein the G peak Raman frequency shift increment of the measured point acquired according to a first incident light polarization angle and a first scattered light polarization angle is taken as a first G peak Raman frequency shift increment, and the G peak Raman frequency shift increment of the measured point acquired according to a second incident light polarization angle and a second scattered light polarization angle is taken as a second G peak Raman frequency shift increment; obtaining a first principal strain and a second principal strain according to the linear relation between the G peak Raman frequency shift increment and the first principal strain and the second principal strain, the polarization angle of incident light, the polarization angle of scattered light, the phonon deformation potential coefficient, the strain-free G peak Raman frequency shift and the G peak Raman frequency shift increment of a measured point; the method has the advantages that the microscopic Raman technology is used as a measuring means, the bidirectional strain nondestructive testing of the detected graphene sample is realized, the method is suitable for the surface of the micro-nano scale of the surface of the graphene material, and the accurate decoupling measurement is carried out on two strain components in the surface. In addition, based on the content of the invention, graphene can be used as a sensing medium, and decoupling analysis of the two-way strain in the flexible material and the structural plane is realized.
The embodiment of the present invention further provides an electronic device, which includes a memory, a processor, and a computer program that is stored in the memory and can be run on the processor, and when the processor executes the computer program, the steps of the method for detecting in-plane bidirectional strain of graphene provided in the foregoing embodiment are implemented.
The embodiment of the present invention further provides a computer-readable storage medium, where a computer program is stored on the computer-readable storage medium, and when the computer program is executed by a processor, the steps of the method for detecting in-plane bidirectional strain of graphene in the foregoing embodiment are executed.
The computer program product provided in the embodiment of the present invention includes a computer-readable storage medium storing a program code, where instructions included in the program code may be used to execute the method described in the foregoing method embodiment, and specific implementation may refer to the method embodiment, which is not described herein again.
It is clear to those skilled in the art that, for convenience and brevity of description, the specific working processes of the system and the apparatus described above may refer to the corresponding processes in the foregoing method embodiments, and are not described herein again.
In addition, in the description of the embodiments of the present invention, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
The functions, if implemented in the form of software functional units and sold or used as a stand-alone product, may be stored in a computer readable storage medium. Based on such understanding, the technical solution of the present invention may be embodied in the form of a software product, which is stored in a storage medium and includes instructions for causing a computer device (which may be a personal computer, a server, or a network device) to execute all or part of the steps of the method according to the embodiments of the present invention. And the aforementioned storage medium includes: a U-disk, a removable hard disk, a Read-Only Memory (ROM), a Random Access Memory (RAM), a magnetic disk or an optical disk, and other various media capable of storing program codes.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
Finally, it should be noted that: the above-mentioned embodiments are only specific embodiments of the present invention, which are used for illustrating the technical solutions of the present invention and not for limiting the same, and the protection scope of the present invention is not limited thereto, although the present invention is described in detail with reference to the foregoing embodiments, those skilled in the art should understand that: any person skilled in the art can modify or easily conceive the technical solutions described in the foregoing embodiments or equivalent substitutes for some technical features within the technical scope of the present disclosure; such modifications, changes or substitutions do not depart from the spirit and scope of the embodiments of the present invention, and they should be construed as being included therein. Therefore, the protection scope of the present invention shall be subject to the protection scope of the appended claims.
Claims (10)
1. An in-plane bidirectional strain detection method for graphene, the method comprising:
obtaining a graphene sample to be detected and a backscattering polarization Raman system;
setting a sample coordinate system of the detected graphene sample under the backscattering polarization Raman system;
obtaining parameters of the detected graphene sample, wherein the parameters comprise a crystal orientation angle, a main strain angle, a phonon deformation potential coefficient and a strain-free G peak Raman frequency shift;
setting an incident light polarization angle and a scattered light polarization angle of the backscattering polarization Raman system, wherein the incident light polarization angle comprises a first incident light polarization angle and a second incident light polarization angle, and the scattered light polarization angle comprises a first scattered light polarization angle and a second scattered light polarization angle;
setting a measured point of the measured graphene sample;
acquiring a G peak Raman frequency shift increment of the measured point by using the backscattering polarization Raman system according to the incident light polarization angle and the scattered light polarization angle, wherein the G peak Raman frequency shift increment of the measured point acquired according to the first incident light polarization angle and the first scattered light polarization angle is a first G peak Raman frequency shift increment, and the G peak Raman frequency shift increment of the measured point acquired according to the second incident light polarization angle and the second scattered light polarization angle is a second G peak Raman frequency shift increment;
obtaining the first principal strain and the second principal strain according to the linear relation between the G peak Raman frequency shift increment and the first principal strain and the second principal strain, the polarization angle of the incident light, the polarization angle of the scattered light, the phonon deformation potential coefficient, the unstrained G peak Raman frequency shift and the G peak Raman frequency shift increment of the measured point;
the first principal strain is not less than the second principal strain, the crystal orientation angle is an azimuth angle of a crystal orientation X axis of the measured graphene sample under an X' axis of a sample coordinate system, the principal strain angle is an azimuth angle of the first principal strain under the sample coordinate system, the incident light polarization angle is an azimuth angle of an incident light polarization direction of the backscattering polarization raman system under the sample coordinate system, and the scattered light polarization angle is an azimuth angle of a scattered light polarization direction of the backscattering polarization raman system under the sample coordinate system.
2. The graphene in-plane bidirectional strain detection method according to claim 1, wherein a linear relationship between the G-peak raman shift increment and the first and second principal strains is realized by the following formula:
wherein the content of the first and second substances,
is the crystal orientation angle, Λ is the phonon deformation potential coefficient, θ is the incident light polarization angle, γ is the scattered light polarization angle, ω is0The G peak Raman frequency shift of the unstrained G peak is obtained, delta omega is the G peak Raman frequency shift increment of the measured point,1in order to be said first principal strain,2is the second principal strain.
3. The graphene in-plane bidirectional strain detection method according to claim 2, wherein the obtaining the first principal strain and the second principal strain from a linear relationship between the G peak raman shift increment and a first principal strain and a second principal strain, the incident light polarization angle, the scattered light polarization angle, the phonon deformation potential coefficient, the unstrained G peak raman shift, and the G peak raman shift increment of the measured point comprises:
calculating the first and second principal strains according to:
wherein the content of the first and second substances,
is the crystal orientation angle, Λ, is the phonon deformation coefficient, ω0For said strain-free G-peak Raman frequency shift, Δ ω1Delta of Raman shift of the first G peak, Δ ω2Is the second G peak Raman frequency shift increment, θ1Is the first incident light polarization angle, θ2Is the second incident light polarization angle, gamma1Is the polarization angle of the first scattered light, gamma2For the second scattered light polarization angle,1in order to be said first principal strain,2is the second principal strain.
4. The method for detecting in-plane bidirectional strain of graphene according to claim 1, further comprising:
if the first incident light polarization angle theta is set1The polarization angle gamma of the first scattered light1Is theta1＝γ1And is
The second incident light polarization angle theta2And the second scattered light polarization angle gamma2Is theta2＝γ2And is
The strain decoupling expression for the first and second principal strains is implemented by the following equation:
wherein, Λ is the phonon deformation coefficient, omega0For said strain-free G-peak Raman frequency shift, Δ ω1Is the firstG peak Raman Shift increment, Δ ω2For the second G peak raman shift increment,1in order to be said first principal strain,2is the second principal strain.
5. The method for detecting in-plane bidirectional strain of graphene according to claim 1, further comprising:
if the first incident light polarization angle theta is set1The polarization angle gamma of the first scattered light1Is gamma1＝θ1The second incident light polarization angle theta2And the second scattered light polarization angle gamma2Is theta2＝θ1And gamma is2＝θ2+90 °, the strain decoupling expression for the first and second principal strains is implemented by the following equation:
wherein the content of the first and second substances,
is the crystal orientation angle, Λ, is the phonon deformation coefficient, ω0For said strain-free G-peak Raman frequency shift, Δ ω1Delta of Raman shift of the first G peak, Δ ω2Is the second G peak Raman frequency shift increment, θ1For the first angle of polarization of the incident light,1in order to be said first principal strain,2is the second principal strain.
6. An in-plane bidirectional strain detection device for graphene, the device comprising:
the sample coordinate system acquisition unit is used for acquiring a graphene sample to be detected, a backscattering polarization Raman system and a sample coordinate system of the graphene sample to be detected under the backscattering polarization Raman system;
the sample parameter acquisition unit is used for acquiring parameters of the detected graphene sample, wherein the parameters comprise a crystal orientation angle, a main strain angle, a phonon deformation potential coefficient and a strain-free G peak Raman frequency shift;
a detection parameter setting unit, configured to set an incident light polarization angle and a scattered light polarization angle of the backscatter polarization raman system, where the incident light polarization angle includes a first incident light polarization angle and a second incident light polarization angle, and the scattered light polarization angle includes a first scattered light polarization angle and a second scattered light polarization angle;
the sample measured point setting unit is used for setting a measured point of the measured graphene sample;
a frequency shift increment acquiring unit, configured to acquire, by using the backscatter polarization raman system, a G peak raman shift increment of the measured point by using the incident light polarization angle and the scattered light polarization angle, where the G peak raman shift increment of the measured point acquired by using the first incident light polarization angle and the first scattered light polarization angle is a first G peak raman shift increment, and the G peak raman shift increment of the measured point acquired by using the second incident light polarization angle and the second scattered light polarization angle is a second G peak raman shift increment;
a principal strain obtaining unit, configured to obtain the first principal strain and the second principal strain according to a linear relationship between the G peak raman shift increment and a first principal strain and a second principal strain, the incident light polarization angle, the scattered light polarization angle, the phonon deformation potential coefficient, the unstrained G peak raman shift, and the G peak raman shift increment of the measured point;
the first principal strain is not less than the second principal strain, the crystal orientation angle is an azimuth angle of a crystal orientation X axis of the measured graphene sample under an X' axis of a sample coordinate system, the principal strain angle is an azimuth angle of the first principal strain under the sample coordinate system, the incident light polarization angle is an azimuth angle of an incident light polarization direction of the backscattering polarization raman system under the sample coordinate system, and the scattered light polarization angle is an azimuth angle of a scattered light polarization direction of the backscattering polarization raman system under the sample coordinate system.
7. The graphene in-plane bidirectional strain detection device according to claim 6, wherein a linear relationship between the G peak Raman frequency shift increment and the first and second principal strains is realized by the following formula:
wherein the content of the first and second substances,
is the crystal orientation angle, Λ is the phonon deformation potential coefficient, θ is the incident light polarization angle, γ is the scattered light polarization angle, ω is0The G peak Raman frequency shift of the unstrained G peak is obtained, delta omega is the G peak Raman frequency shift increment of the measured point,1in order to be said first principal strain,2is the second principal strain.
8. The graphene in-plane bidirectional strain detection device according to claim 7, wherein the main strain acquisition unit is specifically configured to:
calculating the first and second principal strains according to:
wherein the content of the first and second substances,
is the crystal orientation angle, Λ, is the phonon deformation coefficient, ω0For said strain-free G-peak Raman frequency shift, Δ ω1Delta of Raman shift of the first G peak, Δ ω2Is the second G peak Raman frequency shift increment, θ1Is the first incident light polarization angle, θ2Is the second incident light polarization angle, gamma1Is the polarization angle of the first scattered light, gamma2Is a stand forThe second scattered light polarization angle is a second angle,1in order to be said first principal strain,2is the second principal strain.
9. The graphene in-plane bidirectional strain detection device according to claim 6, further comprising:
a first setting unit for setting the first incident light polarization angle theta1The polarization angle gamma of the first scattered light1Is theta1＝γ1And is
The second incident light polarization angle theta2And the second scattered light polarization angle gamma2Is theta2＝γ2And is
The strain decoupling expression for the first and second principal strains is implemented by the following equation:
wherein, Λ is the phonon deformation coefficient, omega0For said strain-free G-peak Raman frequency shift, Δ ω1Delta of Raman shift of the first G peak, Δ ω2For the second G peak raman shift increment,1in order to be said first principal strain,2is the second principal strain.
10. The graphene in-plane bidirectional strain detection device according to claim 6, further comprising:
a second setting unit for setting the first incident light polarization angle theta1The polarization angle gamma of the first scattered light1Is gamma1＝θ1The second incident light polarization angle theta2And the second scattered light polarization angle gamma2Is theta2＝θ1And gamma is2＝θ2+90 °, the strain decoupling expression for the first and second principal strains is implemented by the following equation:
wherein the content of the first and second substances,
is the crystal orientation angle, Λ, is the phonon deformation coefficient, ω0For said strain-free G-peak Raman frequency shift, Δ ω1Delta of Raman shift of the first G peak, Δ ω2Is the second G peak Raman frequency shift increment, θ1For the first angle of polarization of the incident light,1in order to be said first principal strain,2is the second principal strain.
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