CN110328766A - A kind of inp wafer processing method - Google Patents
A kind of inp wafer processing method Download PDFInfo
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- CN110328766A CN110328766A CN201910650836.9A CN201910650836A CN110328766A CN 110328766 A CN110328766 A CN 110328766A CN 201910650836 A CN201910650836 A CN 201910650836A CN 110328766 A CN110328766 A CN 110328766A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
- B23K26/402—Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
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Abstract
The invention discloses a kind of inp wafer processing methods.This method process flow: 1, the original monocrystalline of growth according to diameter and monocrystalline situation is end to end cut off；2, the crystal ingot after cutting off end to end is existedDirection makes the small plane of reference；3, the crystal ingot for making the small plane of reference is subjected to sticky stick and directional cutting；4, diameter stepping is carried out according to minimum diameter to chip in irregular shape after cutting；5, laser cyclotomic is carried out according to the standard size of national regulations to the chip after stepping；6, edge chamfer is carried out to the chip after laser cyclotomic；7, following process is carried out to chip.The non-uniform InP single-crystal wafer processing of diameter is carried out using this method, processing loss can be effectively reduced, redemption problem single-chip, improve effective slice area, the InP monocrystalline drawn for LEC method, it can be improved 20% or more using effective slice area that this method processes every crystal ingot, it is even higher that special circumstances can reach 50%.
Description
Technical field
The present invention relates to monocrystalline manufacturing methods, more particularly to a kind of inp wafer processing method.Specifically one
The bigger indium phosphide single crystal ingot of the diameter change that the methods of kind LEC method, VCZ method grow out is processed into the manufacturer of chip
Method.It is also applied for single crystal preparation difficulty, the processing of the biggish novel semi-conductor crystal ingot of diameter change.
Background technique
The processing traditional handicraft of semiconductor crystal be by end to end cut off after crystal ingot according to minimum diameter stepping be gauge
Very little shelves, for example having grown without finished original crystal ingot minimum diameter is 106mm, can satisfy 4 inches require it is straight after barreling
The requirement of diameter 100.8mm, is not able to satisfy 5 inches, the requirement of diameter 125.8mm, therefore is added according to 4 inches of diameter shelves
Work first finds main reference plane position by ingot diameters barreling to 100.8mm, then with X-ray orientation device with tumbling mill, according to specific
Length requirement cuts out the main reference plane that width is 31.5mm or so on crystal ingot.
For relatively difficult at crystalline substance, ingot length is little, diameter and the monocrystalline of bad control, using the work of this maturation
Skill is cut again after whether carrying out disconnected stick according to diameter, carries out whole processing also according to the minimum diameter of whole single crystal rod, all
Have very big monocrystalline waste.For example, the aimed dia of crystal growth is 4 inches, monocrystalline maximum gauge has reached five English
Very little standard, but minimum diameter is also less than 100mm, and not the position that can be broken in head and tail portion, it is continuous large-sized
Part falls short of again.It, can only be according to minimum if such case using traditional diamond-making technique, i.e. the processing flow of Fig. 1 is processed
Diameter is processed, if require to process according to standard size again, that just can only carry out round as a ball processing according to three inch standards, in this way
It just necessarily will appear section diameter and can reach the monocrystalline of target call and be but forced to be downgraded to smaller diameter shelves.Since monocrystalline difficulty obtains
, whole length is smaller, and size diameter distribution is again discontinuous, has no idea to carry out stepping processing, finished product by the way of disconnected stick
Rate is low, and the monocrystalline much obtained by highly difficult crystal growth control is but lost in chip processing link in vain,
Cause very big waste.
Summary of the invention
It the purpose of the invention is to increase the finished product area of single-chip to greatest extent, avoids wasting, especially researches and develops one
Kind inp wafer processing method.LEC method or VCZ method etc. can be effectively improved without fixation using this novel processing method
Container limits slice area of the diameter folding and unfolding compared with large single crystal of the growth pattern acquisition of diameter, and this method is equally applicable growth
Difficulty, the processing for the novel semi-conductor single crystal rod that expensive but diameter is not controlled very well again.
The technical solution adopted by the present invention is that: a kind of inp wafer processing method, which is characterized in that the method have with
Lower step:
S201, the original monocrystalline of growth is cut off end to end according to diameter and monocrystalline situation.
S202, the crystal ingot after cutting off end to end is made into the small plane of reference in (011) direction.
S203, the crystal ingot for making the small plane of reference is subjected to sticky stick and directional cutting.
S204, diameter stepping is carried out according to minimum diameter to chip in irregular shape after cutting.
S204.1, laser cyclotomic is carried out according to the standard size of national regulations to the chip after stepping.
S205, edge chamfer is carried out to the chip after laser cyclotomic.
S206, following process is carried out to chip.
For the present invention in the S202 step, the production width of the small plane of reference is 3-10mm.
For the present invention in the S202 step, the production width of the preferably small plane of reference is 5-10mm.
The present invention does not have surface round as a ball crystal ingot in the S203 step, when sticky stick before cutting, by crystal ingot
Bonding location and the plane of reference with resin streak are in 180 ° of angles；Sticky stick process is all padded crystal ingot abutting edge with viscose glue.
The present invention sorts chip in irregular shape after cutting, sort regular is as follows in the S204 step:
1) the monocrystalline problem piece that naked eyes can identify, is sub-elected.
2), diameter stepping is carried out according to following standard wafer size:
2 inches of shelves: 50.8mm-76.2mm；3 inches of shelves: 76.2mm-100.0mm；4 inches of shelves: 100.0mm-125.0mm；
5 inches of shelves: 125.0mm-150.0mm；6 inches of shelves: 150.0mm-200.0mm.
Advantages of the present invention and effect: it is brilliant that the non-uniform InP monocrystalline (structure is as shown in Figure 3) of diameter is carried out using this method
Piece processing, can be effectively reduced processing loss, saves problem single-chip, improves effective slice area, and LEC method is drawn
InP monocrystalline can be improved 20% or more using effective slice area that this method processes every crystal ingot, and special circumstances can reach
50% is even higher.
This method be suitble to diameter 10mm-200mm diameter range in all semiconductor crystal wafers processing, including normal diameter and
The chip of non-standard diameter is processed, and the semiconductor wafer processing of nonstandard diameter can be more preferable using the effective slice area of this method.
Detailed description of the invention
Fig. 1 is the process flow chart of conventional semiconductors wafer processing；
Fig. 2 is process flow chart of the invention；
Fig. 3 is single crystal diameter variation schematic diagram；
Fig. 4 is present invention slice schematic diagram.
Specific embodiment
Below in conjunction with drawings and examples, the invention will be further described:
Embodiment 1: minimum diameter is 53.885mm, maximum gauge 100.975mm, monocrystalline overall length after monocrystalline is cut off end to end
Degree is 44mm, and slice thickness is 700 μm.
If according to original process flow (as shown in Figure 1) are as follows:
S101: it cuts off end to end.The underproof part of diameter is first broken and is processed again, it is straight to be processed into 3 inch standards
Diameter also will remove mid diameter part less than normal by the technique for the part that crystal ingot mid diameter is not achieved.
S102: crystal ingot is round as a ball and the plane of reference makes.It is only capable of reaching grade, nothing since diameter reaches 4 inch section length
Method is individually processed, according to the consistent standard of rolling diameter, according to 3 inches of standard of dimensioned energy along with other parts
Enough realization maximizing the benefits, and intermediate part of a part of diameter less than 3 inches being mingled with, can not carry out again since length is too short
Secondary processing, the loss of feed caused by stick of breaking also is selected in this part as far as possible, so diameter insufficient section can only lose according to disconnected stick
Processing, processing and utilization, the case study on implementation monocrystalline can not obtain two sections of 3 inches of finished products, total length are as follows: 33mm again.It is round as a ball
Monocrystalline afterwards makes main reference plane according to national standard relevant regulations.
By the monocrystalline of S102 process, S103: directional cutting, S104: edge chamfer, S105 is carried out according to common process:
Following process.
Since this step does not have actual processing, according to monocrystalline length, this kind of method is obtained by the way of theoretical calculation
Theoretical calculation area.Circular is
In formula (1): N is theoretical slice quantity；L is ingot length, i.e. 33mm；T is target's center's value thickness of slice, is taken
0.70mm；ΦLineTo cut linear diameter, 0.12mm is taken；δ is slice loss, takes 0.02mm；In formula (2): M1For the theory to be calculated
Reference area, Φ are the normal diameter of chip, and present case ingot diameters are 3 inches, therefore value 76.2mm.
Going out the piece number according to the theory that present case is calculated in formula (1) and formula (2) is 39, the theoretical calculation face of slice
Product M1It is 177764.2 square millimeters.
Process flow (as shown in Figure 2) according to the invention are as follows:
S201: the original monocrystalline of growth is cut off end to end according to diameter and monocrystalline situation.In this process by shouldering
Part and the unqualified part in tail portion are broken, and crystal ingot total length is 48mm after the stick that breaks.
S202: the crystal ingot after cutting off end to end is existedDirection makes the small plane of reference.This step is without round as a ball and direct
In main reference planePosition makes the small plane of reference, the small plane of reference it is specific the production method is as follows: pass through X-ray orientation device
It determines main reference plane position, and processes the small plane of reference in the main reference plane direction of crystal ingot.Since single crystal diameter is uneven, small ginseng
The production width for examining face can be inconsistent on whole crystal ingot, and manufacturing process needs to determine depending on specific diameter change, it is generally preferable to
The small plane of reference width in the position of minimum diameter is 3-10mm on crystal ingot, and the small plane of reference in position of minimum diameter is wide on more preferable crystal ingot
Degree is 5-10mm.The production of the small plane of reference is had to through whole crystal ingot, if because section diameter is too small, surface cut less than, and
There are holiday, needs to mend and cut until all switching to.
S203: by the crystal ingot for making the small plane of reference carry out sticky stick and directional cutting (the target's center value thickness T of slice,
Cutting line diameter of phiLine, slice loss δ value it is constant).InP single crystal rod AD glue 2 as shown in figure 4, be first pasted by slicing processes
On resin streak 3, InP single-chip 1 and AD glue 2 and resin streak 3 are removed again after the completion of slice.Due to surface do not have it is round as a ball,
Sticky stick process before cutting needs to accomplish following several respects:
1) crystal ingot and resin streak bonding location are preferably in 180 ° of angles with the plane of reference, i.e. the preferred cutting line of cutting process is to crystalline substance
The point of penetration of ingot is on made reference face, and cutting line is parallel to plane where the plane of reference most preferably in cutting process.
2) sticky stick process is unable to hole appearance it is noted that all padded crystal ingot and 3 abutting edge of resin streak with AD glue 2,
Once hole is deposited and is likely to result in chip after dicing and falls off and damage.
S204: diameter stepping is carried out according to minimum diameter to chip in irregular shape after cutting.Sorting mainly includes two
Part, a part are the screenings of problem monocrystalline, and another part is the stepping of diameter.Sort regular is as follows:
1) sub-elect that naked eyes can identify spend crystalline substance, twin, press from both sides crystalline substance, monocrystalline problem piece, the present case monocrystalline such as cavity are not sent out
Show this；
2) diameter of all wafers is measured one by one, every diameter is recorded by measured minimum value, according still further to standard wafer
Size carries out diameter stepping, and stepping rule is as follows:
2 inches of shelves: 50.8mm-76.2mm；3 inches of shelves: 76.2mm-100.0mm；
4 inches of shelves: 100.0mm-125.0mm；5 inches of shelves: 125.0mm-150.0mm；
6 inches of shelves: 150.0mm-200.0mm.
The thickness targets central value T of cutting is 0.70mm；Cutting line diameter of phiLineFor 0.12mm；δ is lost in slice
0.02mm, with M1The cutting condition of theoretical calculation is identical.This monocrystalline is sliced 52 altogether, wherein 2 inches 14,3 inches
34,4 inches 4.All wafers after cutting carry out practical slice areal calculation according to measured diameter, and calculation formula is
In formula (3), M2For the real area and Φ of every wafer after cuttingiFor every a piece of diameter measured value.
The real area and M of every wafer after being cut in present case2Value is 307107.3 square millimeters, with theoretical calculation face
Product M1Compared to improving 72.76%.
S204.1: laser cyclotomic is carried out according to the standard size of national regulations to the chip after stepping.
1) for normal single-chip, the diameter criteria of laser cutting is executed according to round as a ball normal diameter, not for diameter
It being able to satisfy the chip of round as a ball normal diameter, such as 4 inches of round as a ball normal diameters of shelves are 100.8mm, main reference plane length is 32mm,
For chip of the diameter between (100.0-100.8) mm, due to crystal growth inherent characteristic, chip itself is not regular circle
Shape, in addition main reference plane needs to process, the chip that 100.8mm is not achieved for diameter also will be according to 4 inch standard cutting process
Be cut by laser cut to control appearance profile and main reference plane length less than part retain original appearance be directly entered chamfering work
Sequence.
2) for monocrystalline problem piece, the mark that can satisfy is processed into monocrystalline non-problematic zone by the way of laser cutting
Object staff cun, and former plane of reference direction production main reference plane is continued to use, the chip that can not choose non-problematic zone really is done at waste paper again
Reason.
S205: edge chamfer is carried out to the chip after laser cyclotomic.Chip after laser cutting is according to normal chamfering journey
Sequence chamfering, the chip less than normal for diameter need appropriate adjustment program to be arranged if Chamfer Edge has leakage part for the first time, then
Secondary chamfering, diameter will control more than the lower limit of standard size diameter (or requiring diameter), also underproof for reaching lower limit
Chip can only be dropped to and be processed less than 1 inch diameter shelves.
After S205 step, 52 wafers of this monocrystalline are all qualified, and 2 inches 14,3 inches 34,4 inches 4.
According to the practical slice situation after processing, effective slice area M is calculated according to formula (4)3:
Φ in formulaIFor the standard wafer diameter that actual processing after stepping arrives, obtaining value method are as follows: 2 inches of 50.8mm；3 inches
76.2mm；4 inches of 100.0mm；5 inches of 125.0mm；6 inches of 150.0mm.
The effective slice area M of present case3Calculated value is 221319 square millimeters, with theoretical calculation area M1It compares, it is unilateral out
Product improves 24.5%.
S206: following process.The chip following process mode (S206) of the chamfering qualification processing side with traditional handicraft
Formula (S105) is no different, and can carry out chip processing using mature processing flow in batches according to diameter shelves, less for batch size
Chip shelves, batching processing is mixed after being identified by laser marking, final products are traced according to laser-marking number.
Embodiment 2: minimum diameter is 79.3mm, maximum gauge 129.6mm after monocrystalline is cut off end to end, and monocrystalline total length is
39mm, slice thickness is 700 μm, but tail portion monocrystalline center hole, about 15mm long.
Specific implementation process and case study on implementation 1 are consistent, and difference is that the processing of problem mono crystalline portion.
According to original process flow (as shown in Figure 1) situation processing mode and theoretical calculation area M1Calculating (cutting rod
Part is that the thickness targets central value T of cutting is 0.70mm；Cutting line diameter of phiLineFor 0.12mm；Slice loss δ is 0.02mm):
Problem mono crystalline portion and the unqualified part of diameter are broken, if processed according to 3 inch standards, theory goes out the piece number N and is
30, theoretical calculation area M1It is 136741.7 square millimeters；If processed according to 4 inch standards, it is 20 that theory, which goes out the piece number,
Theoretical calculation area M1It is 157000 square millimeters, present case theoretical calculation area M1It takes large values, i.e., 157000 square millimeters.
According to present invention process process (as shown in Figure 2) situation processing mode and cutting after every wafer real area and
M2, effective slice area M3Calculating (cutting condition are as follows: the thickness targets central value T of cutting be 0.70mm；Cutting line diameter of phiLine
For 0.12mm；Slice loss δ is 0.02mm, with theoretical calculation area M1Cutting condition it is identical):
It for the hole problem that tail portion occurs, is designed by laser cyclotomic, gets around intermediate hole and process partially complete 2
Inch standard chip.
Total slice 46, all calculates real areas and M after slice2It is 443202.8988 square millimeters, with theoretical calculation
Area M1It compares, improves 182.29%.
Slice situation after chamfering are as follows: 2 inches 33,3 inches 10,4 inches 12,5 inches 8, calculate and effectively go out
Piece area M3Value is 302731.2 square millimeters, with theoretical calculation area M1It compares, improves 92.82%.
Claims (5)
1. a kind of inp wafer processing method, which is characterized in that the method has following steps:
S201, the original monocrystalline of growth is cut off end to end according to diameter and monocrystalline situation；
S202, by end to end cut off after crystal ingot () the small plane of reference of direction production；
S203, the crystal ingot for making the small plane of reference is subjected to sticky stick and directional cutting；
S204, diameter stepping is carried out according to minimum diameter to chip in irregular shape after cutting；
S204.1, laser cyclotomic is carried out according to the standard size of national regulations to the chip after stepping；
S205, edge chamfer is carried out to the chip after laser cyclotomic；
S206, following process is carried out to chip.
2. a kind of inp wafer processing method according to claim 1, which is characterized in that in the S202 step,
The production width of the small plane of reference is 3-10mm.
3. a kind of inp wafer processing method according to claim 1, which is characterized in that in the S202 step,
The production width of the small plane of reference is 5-10mm.
4. a kind of inp wafer processing method according to claim 1, which is characterized in that in the S203 step,
There is no round as a ball crystal ingot for surface, when sticky stick before cutting, is in by the bonding location of crystal ingot and resin streak and the plane of reference
180 ° of angles；Sticky stick process is all padded crystal ingot abutting edge with viscose glue.
5. a kind of inp wafer processing method according to claim 1, which is characterized in that in the S204 step,
Chip in irregular shape after cutting is sorted, sort regular is as follows:
1) the monocrystalline problem piece that naked eyes can identify, is sub-elected；
2), diameter stepping is carried out according to following standard wafer size:
2 inches of shelves: 50.8mm-76.2mm；3 inches of shelves: 76.2mm-100.0mm；4 inches of shelves: 100.0mm-125.0mm；5 English
Very little shelves: 125.0mm-150.0mm；6 inches of shelves: 150.0mm-200.0mm.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111152375A (en) * | 2019-11-05 | 2020-05-15 | 中国电子科技集团公司第十三研究所 | Method for cutting substrate wafer by indium phosphide crystal bar |
| CN111497043A (en) * | 2020-03-05 | 2020-08-07 | 秦皇岛本征晶体科技有限公司 | Method for manufacturing magnesium fluoride wave plate element |
| CN114179236A (en) * | 2021-12-22 | 2022-03-15 | 山东优安新能源汽车零部件有限公司 | Silicon wafer treatment device in electronic instrument |
| CN115178884A (en) * | 2022-09-13 | 2022-10-14 | 西北电子装备技术研究所(中国电子科技集团公司第二研究所) | Wafer thermal separation method |
| CN117901281A (en) * | 2023-12-07 | 2024-04-19 | 深圳市中金岭南有色金属股份有限公司韶关冶炼厂 | Processing method and application of indium phosphide monocrystal |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8502112B2 (en) * | 2003-02-19 | 2013-08-06 | Ipg Microsystems Llc | System and method for cutting using a variable astigmatic focal beam spot |
| CN106425105A (en) * | 2016-12-08 | 2017-02-22 | 中国电子科技集团公司第四十六研究所 | Method for printing laser identifier through gallium arsenide wafer |
| CN106863628A (en) * | 2017-01-23 | 2017-06-20 | 珠海鼎泰芯源晶体有限公司 | Indium phosphide crystal ingot cuts（100）The method of chip |
| CN107433397A (en) * | 2017-08-02 | 2017-12-05 | 武汉大学 | A kind of wafer cutting device and method of jet auxiliary laser plasma |
| CN109760221A (en) * | 2018-12-29 | 2019-05-17 | 珠海鼎泰芯源晶体有限公司 | A kind of wire-electrode cutting and processing method of large scale thin slice inp wafer |
-
2019
- 2019-07-18 CN CN201910650836.9A patent/CN110328766B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8502112B2 (en) * | 2003-02-19 | 2013-08-06 | Ipg Microsystems Llc | System and method for cutting using a variable astigmatic focal beam spot |
| CN106425105A (en) * | 2016-12-08 | 2017-02-22 | 中国电子科技集团公司第四十六研究所 | Method for printing laser identifier through gallium arsenide wafer |
| CN106863628A (en) * | 2017-01-23 | 2017-06-20 | 珠海鼎泰芯源晶体有限公司 | Indium phosphide crystal ingot cuts（100）The method of chip |
| CN107433397A (en) * | 2017-08-02 | 2017-12-05 | 武汉大学 | A kind of wafer cutting device and method of jet auxiliary laser plasma |
| CN109760221A (en) * | 2018-12-29 | 2019-05-17 | 珠海鼎泰芯源晶体有限公司 | A kind of wire-electrode cutting and processing method of large scale thin slice inp wafer |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111152375A (en) * | 2019-11-05 | 2020-05-15 | 中国电子科技集团公司第十三研究所 | Method for cutting substrate wafer by indium phosphide crystal bar |
| WO2021088509A1 (en) * | 2019-11-05 | 2021-05-14 | 中国电子科技集团公司第十三研究所 | Method for cutting substrate wafers by using indium phosphide crystal bar |
| CN111497043A (en) * | 2020-03-05 | 2020-08-07 | 秦皇岛本征晶体科技有限公司 | Method for manufacturing magnesium fluoride wave plate element |
| CN114179236A (en) * | 2021-12-22 | 2022-03-15 | 山东优安新能源汽车零部件有限公司 | Silicon wafer treatment device in electronic instrument |
| CN115178884A (en) * | 2022-09-13 | 2022-10-14 | 西北电子装备技术研究所(中国电子科技集团公司第二研究所) | Wafer thermal separation method |
| CN117901281A (en) * | 2023-12-07 | 2024-04-19 | 深圳市中金岭南有色金属股份有限公司韶关冶炼厂 | Processing method and application of indium phosphide monocrystal |
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| CN110328766B (en) | 2021-02-23 |
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