CN106863628A - Indium phosphide crystal ingot cuts（100）The method of chip - Google Patents
Indium phosphide crystal ingot cuts（100）The method of chip Download PDFInfo
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- CN106863628A CN106863628A CN201710049008.0A CN201710049008A CN106863628A CN 106863628 A CN106863628 A CN 106863628A CN 201710049008 A CN201710049008 A CN 201710049008A CN 106863628 A CN106863628 A CN 106863628A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/007—Use, recovery or regeneration of abrasive mediums
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
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Abstract
The invention discloses a kind of method that indium phosphide crystal ingot cuts (100) chip, belong to crystalline material cutting processing technical field, be bonded at indium phosphide crystal ingot on cutting machine three-dimensional sample platform by methods described, choose the plane of reference；It is then assumed that the gained indium phosphide single crystal ingot end face indices of crystallographic plane are (311), crystal face (111) and (311) angle are calculated, adjust sample stage angle；Sample is cut, with X-ray orientation device test sample product crystal orientation；If (111) crystallographic plane diffraction peak, then according to angle, adjustment sample stage obtains (100) end face；If not (111) crystallographic plane diffraction peak, with the method for corrosion dislocation, adjusts sample stage angle, (100) end face is finally given.The present invention combines three-dimensional sample platform and X-ray orientation device and inp wafer dislocation corrosion technology, the cutting degree of accuracy is high, it is easy to use, efficiency high, it is widely applicable, can determine and find out (100) crystal face of the indium phosphide single crystal of any crystal orientation obtained by the growth of vertical temperature gradient solidification technology VGF methods.
Description
Technical field
It is more particularly to a kind of to orient three-dimensional sample platform and X-ray the present invention relates to crystalline material processing technique field
Instrument and inp wafer dislocation corrosion technology combine the method for cutting high-index surface indium phosphide crystal ingot (100) chip.
Background technology
Indium phosphide is one of strategic important semi-conducting material of tool, in optic communication, millimeter wave high frequency, low noise, broadband
Microelectronics is integrated etc., and field has important application.Long wavelength (1.3-1.55 μm) light emitting diode of indium phosphide, laser
Optical fiber telecommunications system is widely used in detector, the heterojunction bipolar transistor (HBT) of indium phosphide, high electron mobility are brilliant
Body pipe (HEMT) also has been used for high-speed communication system of new generation, one of the preferred material in indium phosphide or Terahertz field.With half
The high-frequency low-noise acoustic device of insulation indium phosphide manufacture is New Generation Radar communication, the key componentses of satellite communication.
The main growing technology of current high-quality indium phosphide single crystal is vertical gradient freeze technique.Vertical temperature gradient is coagulated
Gu the major advantage of indium phosphide single crystal growing technology is that Temperature Distribution is accurately controlled in body of heater, crystal growth thermograde is small,
Thermal stress that crystal bears is low, monocrystalline dislocation density is low, can by suitable aftertreatment technology, such as annealing, change cooldown rate
Deng concentration for reducing crystal precipitate etc..It is highly suitable for growing high-quality indium phosphide single crystal material.
Because in vertical gradient freeze technique indium phosphide single crystal growth course, the thermograde of crystal growth is smaller, connects
The growth course of smectic body free growth state, the phenomenon for growth crystal deviation seed crystal crystal orientation easily occur, and monocrystalline is vulnerable to outer
Boundary disturbs, and produces twin, and it may be high miller index surface (such as 311 crystal faces) to obtain indium phosphide single crystal end face, and commonly used
Indium phosphide single crystal wafer is (100) or (111).
It would therefore be desirable to have high efficiency, cutting degree of accuracy crystal ingot cut crystal method high otherwise, can cause crystal to waste.
The content of the invention
It is an object of the invention to overcome existing monocrystalline cutting technique process high-index surface indium phosphide single crystal ingot during
The deficiency of presence, there is provided a kind of indium phosphide crystal ingot cuts the cutting method of (100) chip, by three-dimensional sample platform and X-ray
Direction finder and inp wafer dislocation corrosion technology combine, and arbitrary characteristics crystal ingot can be cut into (100) chip, especially
Indium phosphide single crystal ingot is obtained by vertical temperature gradient solidification technology suitable for cutting, the cutting degree of accuracy is high, easy to operate, save brilliant
Body.
What the purpose of the present invention was achieved through the following technical solutions：
The present invention provides a kind of method that indium phosphide crystal ingot cuts (100) chip, including：
1) indium phosphide crystal ingot is bonded on cutting machine three-dimensional sample platform, the indium phosphide crystal ingot is perpendicular to the three-dimensional sample
Platform, using the end face of crystal ingot as the plane of reference, on the plane of reference perpendicular to sample stage in downward direction as longitudinal direction, parallel to sample stage to
Right direction longitudinally, laterally meets the right-hand rule of coordinate system as transverse direction with plane of reference normal direction；
2) assume that the indium phosphide single crystal ingot end face indices of crystallographic plane are (311), calculated by the crystal face angle formulae of cubic system
(311) crystal face and (111) crystal face angle, (111) crystal face and (100) crystal face angle；
3) according to gained angle is calculated, three-dimensional sample corner of table degree is adjusted；
4) sample is cut from crystal ingot end face, with the surface orientation of the cut surface of X-ray orientation device test sample；
5) judge whether print cut surface (111) crystallographic plane diffraction peak occurs；
If 6) (111) crystallographic plane diffraction peak occurs in sample, three are adjusted again according to (100) crystal face and (111) crystal face angle
Dimension sample stage angle, cuts out required (100) chip；
If 7) do not observe (111) crystallographic plane diffraction peak, using indium phosphide single crystal (111) crystal face dislocation corrosion method, adjustment three
Dimension sample stage angle, return to step 4), finally cut out (100) chip.
Further, indium phosphide single crystal (111) the crystal face dislocation corrosion method is comprised the following steps：
Sample cut surface is ground and minute surface is polished to, surface cutting damage is removed；
Sample is corroded using corrosive liquid, etch pit occurs in sample after corrosion；
The shape of etch pit is observed, and is compared with standard (111) face dislocation etch pit, according to the side that dislocation etch pit is crooked
To and degree, judge the angle of crystal ingot cut surface and (111) crystal face.
Preferably, the sample is cleaved into 10mm × 10mm sample wafers.
The present invention has following beneficial effect：
The present invention is combined by three-dimensional sample platform and X-ray orientation device and inp wafer dislocation corrosion technology and is beneficial to
Existing common experimental technique and means of testing, the method cutting degree of accuracy are high, easy to use, efficiency high；It is of the invention to be applicable
It is wide, arbitrary characteristics crystal ingot can be cut into (100) chip, it is particularly possible to determine and find out skill is solidified by vertical temperature gradient
(100) crystal face of the indium phosphide single crystal of any crystal orientation that the growth of art VGF methods is obtained.
Specific embodiment
Below in conjunction with the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described：
The present invention provides a kind of method that indium phosphide crystal ingot cuts (100) chip, it is characterised in that including：
1) indium phosphide crystal ingot is bonded on cutting machine three-dimensional sample platform, the indium phosphide crystal ingot is perpendicular to the three-dimensional sample
Platform, using the end face of crystal ingot as the plane of reference, on the plane of reference perpendicular to sample stage in downward direction as longitudinal direction, parallel to sample stage to
Right direction longitudinally, laterally meets the right-hand rule of coordinate system as transverse direction with plane of reference normal direction；
2) from the natural growth end face of crystal ingot, (111) crystal face is first found out, then (100) crystalline substance is obtained by (111) crystal face
Face, according to the general growth rhythm of VGF indium phosphide single crystal, it is assumed that the indium phosphide single crystal ingot end face indices of crystallographic plane are
(311), indium phosphide crystal belongs to cubic system, and it is brilliant with (111) to calculate (311) crystal face by the crystal face angle formulae of cubic system
Face angle is 29.5 °, and (111) crystal face and (100) crystal face angle are 54.7 °；
3) according to gained angle is calculated, according to the scale on sample table top, by high-precision screw thread control left rotation and right rotation and
Pitching adjusts to adjust three-dimensional sample corner of table degree.Further, adjusted to (111) crystal face by (311) crystal face, keep sample stage water
Flat orientation angle is constant, and crystal turns clockwise 29.5 ° in referential；Adjusted to (100) crystal face by (111) crystal face, kept
Sample stage horizontal direction angle is constant, crystal 54.7 ° of rotate counterclockwise in referential
4) sample is cut from crystal ingot end face, with the surface orientation of the cut surface of X-ray orientation device test sample；Preferably,
The chip that a piece of thickness is 1-2mm is cut out from crystal ingot edge end；It is highly preferred that chip of the cutting thickness for 1mm；
5) judge whether print cut surface (111) crystallographic plane diffraction peak occurs；
If 6) there is (111) crystallographic plane diffraction peak, three-dimensional sample is adjusted according to (100) crystal face and (111) crystal face angle again
Sample platform angle, cuts out required (100) chip.General X-ray orientation device is only in the crystal orientation and theoretical value one of cutting crystal face
Diffraction peak-peak just occurs when cause, according to the working specification of orientation, thinks to have found phase when there is peak-peak
The crystal face answered.
If 7) do not observe (111) crystallographic plane diffraction peak, using indium phosphide single crystal (111) crystal face dislocation corrosion method, adjustment three
Dimension sample stage angle, return to step 4), Step wise approximation (111) crystal face finally cuts out (100) chip.
Further, indium phosphide single crystal (111) the crystal face dislocation corrosion method is comprised the following steps：
Sample cut surface is ground and minute surface is polished to, surface cutting damage is removed；
Then sample is corroded using indium phosphide single crystal (111) crystal face dislocation corrosion liquid, sample occurs rotten after corrosion
Pit；
Observe the shape of etch pit, after corrosion dislocation, dislocation pit is clear, by with standard (111) face dislocation etch pit ratio
Compared with according to the crooked direction of dislocation etch pit and degree, judging the angle of crystal ingot cut surface and (111) crystal face.
Preferably, the sample is cleaved into 10mm × 10mm sample wafers.
In sum, the present invention passes through three-dimensional sample platform and X-ray orientation device instrument and inp wafer dislocation corrosion skill
Art combines cutting high-index surface indium phosphide crystal ingot (100) chip, and the cutting degree of accuracy is high, easy to operate, saves crystal, is applicable
It is wide.
The preferred embodiment of the present invention is described above, but the invention is not limited in above-mentioned specific embodiment party
Formula, above-mentioned specific embodiment is only schematical, is not restricted, and one of ordinary skill in the art is in this hair
Under bright enlightenment, in the case of present inventive concept and scope of the claimed protection is not departed from, many forms can also be made,
These are belonged within the scope of the present invention.
Claims (3)
1. a kind of method that indium phosphide crystal ingot cuts (100) chip, it is characterised in that including：
1) indium phosphide crystal ingot is bonded on cutting machine three-dimensional sample platform, the indium phosphide crystal ingot perpendicular to the three-dimensional sample platform,
Using the end face of crystal ingot as the plane of reference, perpendicular to sample stage, in downward direction conduct is longitudinal on the plane of reference, parallel to sample stage to the right
Direction longitudinally, laterally meets the right-hand rule of coordinate system as transverse direction with plane of reference normal direction；
2) assume that the indium phosphide single crystal ingot end face indices of crystallographic plane are (311), (311) are calculated by the crystal face angle formulae of cubic system
Crystal face and (111) crystal face angle, (111) crystal face and (100) crystal face angle；
3) according to gained angle is calculated, three-dimensional sample corner of table degree is adjusted；
4) sample is cut from crystal ingot end face, with the surface orientation of the cut surface of X-ray orientation device test sample；
5) whether judgement sample cut surface there is (111) crystallographic plane diffraction peak；
If 6) (111) crystallographic plane diffraction peak occurs in sample, three-dimensional sample is adjusted according to (100) crystal face and (111) crystal face angle again
Sample platform angle, cuts out required (100) chip；
If 7) do not observe (111) crystallographic plane diffraction peak, using indium phosphide single crystal (111) crystal face dislocation corrosion method, the three-dimensional sample of adjustment
Sample platform angle, return to step 4), finally cut out (100) chip.
2. the method that indium phosphide crystal ingot according to claim 1 cuts (100) chip, it is characterised in that the indium phosphide
Monocrystalline (111) crystal face dislocation corrosion method is comprised the following steps：
Sample cut surface is ground and minute surface is polished to, surface cutting damage is removed；
Sample is corroded using corrosive liquid, etch pit occurs in sample after corrosion；
Observe the shape of etch pit, and compare with standard (111) face dislocation etch pit, according to the crooked direction of dislocation etch pit and
Degree, judges the angle of crystal ingot cut surface and (111) crystal face.
3. the method that indium phosphide crystal ingot according to claim 1 cuts (100) chip, it is characterised in that：The sample solution
Manage into 10mm × 10mm sample wafers.
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107599196A (en) * | 2017-10-30 | 2018-01-19 | 中国电子科技集团公司第四十六研究所 | It is a kind of<111>Type monocrystalline silicon determines crystal orientation multi-line cutting process |
| CN110328766A (en) * | 2019-07-18 | 2019-10-15 | 中国电子科技集团公司第四十六研究所 | A kind of inp wafer processing method |
| CN111263833A (en) * | 2018-02-23 | 2020-06-09 | 住友电气工业株式会社 | Indium phosphide crystal substrate |
| CN111267249A (en) * | 2020-03-18 | 2020-06-12 | 中国科学院福建物质结构研究所 | Crystal orientation method and device |
| CN111497043A (en) * | 2020-03-05 | 2020-08-07 | 秦皇岛本征晶体科技有限公司 | Method for manufacturing magnesium fluoride wave plate element |
| CN112394073A (en) * | 2020-09-21 | 2021-02-23 | 北京镓族科技有限公司 | Method for rapidly and accurately measuring orientation of crystal axis of gallium oxide single crystal |
| WO2021088509A1 (en) * | 2019-11-05 | 2021-05-14 | 中国电子科技集团公司第十三研究所 | Method for cutting substrate wafers by using indium phosphide crystal bar |
| CN113427651A (en) * | 2021-06-25 | 2021-09-24 | 广东先导微电子科技有限公司 | Method for judging linear twin crystal length in gallium arsenide crystal |
| CN114161590A (en) * | 2021-10-29 | 2022-03-11 | 威科赛乐微电子股份有限公司 | Preparation method of indium phosphide seed crystal |
| CN114264652A (en) * | 2021-12-09 | 2022-04-01 | 浙江大学杭州国际科创中心 | Reverse analysis method for generation and evolution of dislocations in silicon carbide |
| TWI817486B (en) * | 2022-05-06 | 2023-10-01 | 環球晶圓股份有限公司 | Slicing apparatus and slicing method |
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Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107599196A (en) * | 2017-10-30 | 2018-01-19 | 中国电子科技集团公司第四十六研究所 | It is a kind of<111>Type monocrystalline silicon determines crystal orientation multi-line cutting process |
| CN111263833A (en) * | 2018-02-23 | 2020-06-09 | 住友电气工业株式会社 | Indium phosphide crystal substrate |
| CN111263833B (en) * | 2018-02-23 | 2020-10-16 | 住友电气工业株式会社 | Indium phosphide crystal substrate |
| CN110328766A (en) * | 2019-07-18 | 2019-10-15 | 中国电子科技集团公司第四十六研究所 | A kind of inp wafer processing method |
| CN110328766B (en) * | 2019-07-18 | 2021-02-23 | 中国电子科技集团公司第四十六研究所 | Indium phosphide wafer processing method |
| WO2021088509A1 (en) * | 2019-11-05 | 2021-05-14 | 中国电子科技集团公司第十三研究所 | Method for cutting substrate wafers by using indium phosphide crystal bar |
| CN111497043A (en) * | 2020-03-05 | 2020-08-07 | 秦皇岛本征晶体科技有限公司 | Method for manufacturing magnesium fluoride wave plate element |
| CN111267249A (en) * | 2020-03-18 | 2020-06-12 | 中国科学院福建物质结构研究所 | Crystal orientation method and device |
| CN112394073A (en) * | 2020-09-21 | 2021-02-23 | 北京镓族科技有限公司 | Method for rapidly and accurately measuring orientation of crystal axis of gallium oxide single crystal |
| CN112394073B (en) * | 2020-09-21 | 2023-02-28 | 北京铭镓半导体有限公司 | Method for rapidly and accurately measuring orientation of crystal axis of gallium oxide single crystal |
| CN113427651A (en) * | 2021-06-25 | 2021-09-24 | 广东先导微电子科技有限公司 | Method for judging linear twin crystal length in gallium arsenide crystal |
| CN114161590A (en) * | 2021-10-29 | 2022-03-11 | 威科赛乐微电子股份有限公司 | Preparation method of indium phosphide seed crystal |
| CN114264652A (en) * | 2021-12-09 | 2022-04-01 | 浙江大学杭州国际科创中心 | Reverse analysis method for generation and evolution of dislocations in silicon carbide |
| TWI817486B (en) * | 2022-05-06 | 2023-10-01 | 環球晶圓股份有限公司 | Slicing apparatus and slicing method |
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