CN110323664A - A kind of novel electrode electro-optical Q-switch - Google Patents

Abstract

This patent is to be related to the patent of invention of laser field, in particular to a kind of novel electrode electro-optical Q-switch.This patent installs transparent electrode before two light pass surface of crystal using the longitudinal electro-optic effect of crystal using sheet electro-optic crystal, by the deflection for realizing light beam polarization direction toward pressurization in transparent electrode.Since electrode is directly installed on the light pass surface both ends of crystal, field uniformity is good, and the operating voltage of longitudinal electro-optic effect is unrelated with crystalline size, and under the premise of guaranteeing not puncture, the crystal that selectable lengths are shorter but bore is bigger reduces cost.Electrooptical switching structure of the invention is simple, and clear aperture is big, and use demand is flexibly met.In addition, each optical element in this electro-optical Q-switch can be single entirety by optical cement or in-depth optical cement gluing.

Description

A kind of novel electrode electro-optical Q-switch

Technical field

This patent is related to the patent of invention of laser field, in particular to a kind of novel electrode electro-optical Q-switch.

Background technique

Laser Q-switching technology is also Q-switch technology, is a kind of technology for obtaining high-peak power, narrow spaces laser pulse.

Q value is the quality factor for being used to describe resonant tank quality height, and Q value is low, then cavity loss is big, device threshold It is high, it is not easy to form laser generation；Q value is high, then cavity loss is small, and device threshold is low, laser generation easy to form.Tune Q's is basic Principle is exactly that the Q value (namely controlling the loss of resonant cavity) of resonant cavity is controlled by some way.Try at the beginning of optical pumping Phase, the oscillation threshold of device was turned up, to inhibit the generation of laser generation, accumulated energy level particle on operation material.With Optical pumping continue to motivate, run up to maximum value between upper energy level population, at this point, suddenly the threshold value of device is turned down, then, The a large amount of particles accumulated in upper energy level just can transit to avalanche type laser lower level, in a very short period of time by the energy of storage It releases, to obtain the high pulsed laser output of peak power.

Q-regulating technique includes the various ways such as acousto-optic Q modulation, electric-optically Q-switched, passive Q-adjusted.Wherein utilize the device of electric-optically Q-switched production Part have switch time it is short, it is high-efficient, adjust the Q moment can be precisely controlled, system the operation is stable, repetition rate height, narrow output pulse width, The features such as peak power is high is at present using relatively wide Q-regulating technique.Electric-optically Q-switched is the linear electro-optic effect using crystal Realize Q value mutation.Add a step-like voltage on crystal, the launch loss of photon in adjusting cavity.When start-up operation, crystal two End plus a voltage, due to the polarization effect of crystal, the loss of resonant cavity is very big, and Q value is low, and laser nonoscillatory, upper laser level is not Disconnected accumulation population, Q, which opens the light, to be in close state.A certain particular moment removes crystal both end voltage, resonant cavity mutation suddenly Low to being lost, Q value is high, and Q switch is opened, and forms giant-pulse laser.

In electric-optically Q-switched device, lateral electric light is utilized with common electro-optic crystal lithium niobate (LN), barium metaborate (BBO) Effect is different, and what DKDP crystal generally utilized is its longitudinal electro-optic effect, i.e. light is parallel with direction of an electric field.There are two electricity by DKDP Backscatter extinction logarithmic ratio component, after pressurization, due to the effect of electric field, DKDP becomes biaxal crystal by uniaxial crystalline substance, decomposes after linearly polarized light is incident At two vertical polarized components, using the DKDP crystal of longitudinal electro-optic effect, operating voltage is unrelated with crystal own dimensions. And since DKDP electro-optic coefficient is big, when wavelength is 1064nm, half-wave voltage is about 7kV or so.DKDP current production technology It is more mature, large volume of crystal can be processed, has a clear superiority to heavy caliber application.But the electricity that present DKDP switch uses Pole is mostly crystal on side face ring electrode, in order to consider the uniformity of electric field, when bore increases, it is necessary to appropriate lengthening crystal Length, so cause the soaring of integral device cost.

Summary of the invention

This patent overcomes the deficiencies in the prior art, in order to simultaneously meet heavy caliber and it is at low cost the needs of, provide one Kind novel electrode electro-optical Q-switch.

To achieve the goals above, this patent adopts the following technical scheme that

Transparent electrode is installed before two light pass surface of crystal using the longitudinal electro-optic effect of crystal using sheet DKDP electro-optic crystal, By the deflection for realizing light beam polarization direction toward pressurization in transparent electrode.Since electrode is directly installed on the light pass surface two of crystal End, field uniformity is good, and the operating voltage of longitudinal electro-optic effect is unrelated with crystalline size, under the premise of guaranteeing not puncture, The crystal that selectable lengths are shorter but bore is bigger, reduces cost.Transparent electrode can be transparent conducting glass, can be transparent Conductive film directly can also plate ito film in plane of crystal, and crystal, transparent electrode and protectiveness window can plate accordingly simultaneously The anti-reflection film of wavelength reduces the insertion loss of integral device.And crystal, transparent electrode and protectiveness window can pass through optical cement or depth Change optical cement and become single entirety, simplifies technique.

Detailed description of the invention

Fig. 1 is novel electrode electro-optical Q-switch structural schematic diagram of the present invention；

Fig. 2 is that optical element optical cement of the present invention is single whole schematic diagram.

Specific embodiment

The present invention will be further described below with reference to the drawings,

Single unit system is as shown in Figure 1,101 be structural housing, and 102 be the contact pin of connection driving and transparent electrode, and 103 be sheet electricity Luminescent crystal, 104 are transparent electrodes, and 105 be fixed protectiveness window on the shell.Transparent electrode 104 passes through lateral conduction glue It is bonded in 103 light pass surface of sheet electro-optic crystal, contact pin 102 is by conductive adhesive in 103 side of transparent electrode.Structural housing 101 using insulating materials, and optical direction both ends are equipped with protectiveness window 105.

Due to utilize be crystal 103 longitudinal electro-optic effect, therefore optical direction is consistent with direction of an electric field, by toward transparent It is pressurizeed on electrode to realize that index ellipsoid deflects, and then changes the polarization direction of outgoing beam.It is mentioned that transparent electrode It can be transparent conducting glass, can be transparent conductive film, ito film can also be directly plated on crystal.Since electrode is in crystalline substance The light pass surface both ends of body, field uniformity is good, and the operating voltage of longitudinal electro-optic effect is unrelated with crystalline size, is guaranteeing not hit Under the premise of wearing, the crystal that selectable lengths are shorter but bore is bigger reduces cost.In addition crystal, transparent electrode and protectiveness Window can plate the anti-reflection film of respective wavelength simultaneously, reduce insertion loss.

In addition, each optical element in this electro-optical Q-switch can be single whole by optical cement or in-depth optical cement gluing Body, as shown in Fig. 2, 201 being sheet electro-optic crystal, 202 being protectiveness window, 203 be transparent electrode.

Electrooptical switching structure of the invention is simple, and clear aperture is big, and use demand is flexibly met in advantage of lower cost.

Claims (7)

1. a kind of novel electrode electro-optical Q-switch specifically includes that structural housing 101, contact pin 102, electro-optic crystal 103, transparent electrode 104 and protectiveness window 105, pacified before two light pass surface of crystal using sheet electro-optic crystal using the longitudinal electro-optic effect of crystal Fill transparent electrode, by realizing the deflection in light beam polarization direction toward pressurizeing in transparent electrode, it is mentioned that transparent electrode can To be transparent conducting glass, transparent conductive film can be, directly ito film can also be plated in plane of crystal, since electrode is in crystalline substance The light pass surface both ends of body, field uniformity is good, and the operating voltage of longitudinal electro-optic effect is unrelated with crystalline size, is guaranteeing not hit Under the premise of wearing, the crystal that selectable lengths are shorter but bore is bigger reduces cost, crystal, transparent electrode and protectiveness window The anti-reflection film of respective wavelength can be plated simultaneously, reduce insertion loss, electrooptical switching structure of the invention is simple, clear aperture Greatly, use demand is flexibly met, and each optical element in electro-optical Q-switch can be by optical cement or in-depth optical cement gluing Single entirety.

2. a kind of novel electrode electro-optical Q-switch according to claim 1, it is characterised in that: the electro-optic crystal is band The flat crystal of longitudinal electro-optic effect, such as DKDP, operating voltage are unrelated with crystalline size.

3. a kind of novel electrode electro-optical Q-switch according to claim 1, it is characterised in that: the electrode is transparent electricity Pole can be transparent conducting glass, can be transparent conductive film, directly can also plate ito film in plane of crystal.

4. a kind of novel electrode electro-optical Q-switch according to claim 1, it is characterised in that: the electrode is in crystal Light pass surface both ends, field uniformity are good.

5. a kind of novel electrode electro-optical Q-switch according to claim 1, it is characterised in that: described to guarantee not puncture Under the premise of, short length and heavy caliber crystal can be preferentially selected, cost is reduced.

6. a kind of novel electrode electro-optical Q-switch according to claim 1, it is characterised in that: the crystal and transparent electricity Pole can plate the anti-reflection film of respective wavelength simultaneously, reduce the insertion loss of integral device.

7. a kind of novel electrode electro-optical Q-switch according to claim 1, it is characterised in that: the crystal, transparent electrode And protectiveness window can become single entirety by optical cement or in-depth optical cement, simplify technique.