CN110323312B - Inorganic flexible optoelectronic device structure and preparation method thereof - Google Patents
Inorganic flexible optoelectronic device structure and preparation method thereof Download PDFInfo
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Abstract
The invention discloses an inorganic flexible optoelectronic device structure and a preparation method thereof, wherein the inorganic flexible optoelectronic device structure sequentially comprises an organic lower protective layer, a silicon film layer, a graphical metal-doped film layer, a graphene layer, a gallium nitride micro-column array, a silicon dioxide protective layer, a metal aluminum reflecting layer, a photocuring organic material, a metal-doped film layer and an organic upper protective layer from bottom to top. Meanwhile, the invention provides a preparation method of the inorganic flexible optoelectronic device, which can realize the preparation of the inorganic flexible optoelectronic device with low cost and high efficiency. The inorganic flexible photoelectronic device provided by the invention solves the problems of lower photoelectric efficiency, shorter service life, performance degradation under ultraviolet irradiation and the like of most of flexible photoelectronic devices based on organic matters, and simultaneously avoids the defects of large brittleness and incapability of folding of inorganic rigid photoelectronic devices, thereby having great application value.
Description
Technical Field
The invention belongs to the technical field of flexible optoelectronic devices, and particularly relates to an inorganic flexible optoelectronic device structure and a preparation method thereof.
Background
The flexible optoelectronic device is a promising direction for the development of future consumer electronics, and the flexible display screen designed and manufactured by the flexible optoelectronic device can be embedded into products such as mobile phones, computers, watches, clothes, helmets and the like, and compared with the traditional products, the wearable electronic products have the characteristics of being deformable and foldable. Therefore, the micro flexible optoelectronic device which is indispensable in the composition of flexible products will have potential commercial impact and huge market value, and the wearable electronic device will become the mainstream trend in the future. At present, most of the available electronic devices on the market, including mobile phones, tablet computers, thin-film solar cells and the like, are rigid, have the characteristics of large area, heavy mass and non-folding, and with the vigorous development of the optoelectronic information industry, flexible optoelectronic devices are widely developed as important component devices of wearable electronic devices, and can be divided into two categories: organic flexible optoelectronic devices and inorganic flexible optoelectronic devices.
Organic materials are widely used in the flexible optoelectronic device industry, for example, kodak corporation in the united states invented a sandwich-structured organic electronic light emitting device. Since the development of organic optoelectronic devices has advanced, organic materials such as photosensitive resins are widely used in the manufacture of flexible optoelectronic devices such as batteries and display screens, and the organic materials are used in the flexible optoelectronic devices, so that the manufacturing cost of the flexible optoelectronic devices is significantly reduced and the performance is improved.
Although the organic flexible optoelectronic device has the advantages, the organic material has the inevitable defects of short service life, easy aging, ultraviolet irradiation resistance and the like, so that the organic flexible optoelectronic device has excellent performance at the beginning of use, but the screen manufactured by the organic flexible optoelectronic device has a color cast phenomenon along with the prolonging of the service time and the irradiation of a light source, the reduction range of the performance and the service life is large, and the future requirements cannot be met. The inorganic substance used as a photoelectronic device has the defects of high brittleness, frangibility and high quality, and is also not in line with the development trend of future flexible electrons.
Disclosure of Invention
The invention aims to solve the technical problem of providing an inorganic flexible photoelectronic device structure and a preparation method thereof, the method can realize the preparation of the inorganic flexible photoelectronic device with low cost and high efficiency, the electronic device structure solves the problems of lower photoelectric efficiency, shorter service life, performance degradation under ultraviolet irradiation and the like of most of flexible photoelectronic devices based on organic matters, and simultaneously avoids the defects of large brittleness and difficult flexibility of inorganic rigid electronic devices, thereby having great application value.
The technical scheme adopted by the invention for solving the technical problems is as follows: firstly, an inorganic flexible optoelectronic device structure is provided, which comprises the following structures from bottom to top in sequence: the organic matter lower protective layer, the silicon thin film layer, the graphical metal doped thin film layer, the graphene layer, the gallium nitride micro-column array, the silicon dioxide protective layer, the metal aluminum reflecting film layer, the metal doped thin film layer and the organic matter upper protective layer.
According to the technical scheme, each group of gallium nitride micro-column array comprises four gallium nitride micro-columns with different diameters and sizes, namely a gallium nitride micro-column I, a gallium nitride micro-column II, a gallium nitride micro-column III and a gallium nitride micro-column IV, wherein the gallium nitride micro-columns comprise an n-type heavily doped gallium nitride layer, an n-type doped gallium nitride layer, an indium gallium nitride quantum well light-emitting layer, a p-type doped gallium nitride layer and a p-type heavily doped indium gallium nitride layer from bottom to top.
According to the technical scheme, the light-cured organic material is arranged in the gap of the gallium nitride micro-column array, the diameter of the bottom of the gallium nitride micro-column I is 1-5 micrometers, the diameter of the bottom of the gallium nitride micro-column II is 5-10 micrometers, the diameter of the bottom of the gallium nitride micro-column III is 10-15 micrometers, and the diameter of the bottom of the gallium nitride micro-column IV is 15-20 micrometers.
According to the technical scheme, the thickness of the organic matter lower protective layer is 50-500 microns, and the material is PDMS or PMMA (PDMS is polydimethylsiloxane, and PMMA is polymethyl methacrylate); the thickness of the silicon film layer is 10-50 microns.
According to the technical scheme, the graphical metal doped thin film layer is an aluminum-doped silver thin film or a titanium-doped silver thin film or an aluminum-titanium co-doped silver thin film, and the thickness of the graphical metal doped thin film is 2-5 nanometers; the height of the gallium nitride micro-column array is 5-15 micrometers; the thickness of the silicon dioxide protective layer is 0.5-2 microns, and the thickness of the metal aluminum reflecting film layer is 0.5-2 microns.
According to the technical scheme, the metal-doped thin film layer is an aluminum-doped silver film, a nickel-doped silver film or an aluminum-nickel co-doped silver film, and the thickness of the metal-doped thin film is 3-6 nanometers; the thickness of the organic matter upper protective layer is 50-500 microns, and the material is PDMS or PMMA organic matter.
The invention also provides a preparation method of the inorganic flexible optoelectronic device structure, which comprises the following steps of S1, preparing a graphical metal-doped thin film layer, depositing a metal-doped thin film layer on a monocrystalline silicon substrate, carrying out thermal annealing on the metal-doped thin film layer, and then carrying out photoetching and etching treatment to form the graphical metal-doped thin film layer; s2, preparing a gallium nitride micro-column array, growing a graphene layer on the graphical metal-doped thin film layer, and then growing the gallium nitride micro-column array on the graphene layer; s3, preparing a side protection layer and a gap filling layer, depositing a silicon dioxide protection layer on the upper surface and the side wall surface of the top of the gallium nitride micro-column array, continuously depositing a metal aluminum reflection film layer, filling a photocuring organic material in the gap of the gallium nitride micro-column array wrapped with the silicon dioxide protection layer and the metal aluminum reflection film layer, and then performing ultraviolet irradiation on the photocuring organic material to cure the photocuring organic material; s4, preparing an upper electrode and an upper protective layer, etching and removing the silicon dioxide protective layer and the metal aluminum reflective film layer until the p-type heavily doped indium gallium nitride layer is exposed, depositing a metal doped thin film layer on the p-type heavily doped indium gallium nitride layer and the photocuring organic material, and preparing an organic upper protective layer on the metal doped thin film layer; s5, preparing a lower electrode and a lower protective layer, etching and thinning the lower end face of the monocrystalline silicon substrate to obtain a silicon thin film layer, preparing an electrode hole in the silicon thin film layer through photoetching and etching processes until the graphical metal-doped thin film layer is exposed, depositing a metal lower electrode and a metal lead in the etched electrode hole, and then preparing an organic lower protective layer on the lower end face.
According to the technical scheme, in the step S1, the temperature of the thermal annealing process is 200-500 ℃, the annealing atmosphere is high-purity nitrogen, and the annealing time is 1-5 minutes; the patterned metal film layer is circular, every four circular patterns form a group, the diameters of the circular patterns are respectively 1-5 micrometers, 5-10 micrometers, 10-15 micrometers and 15-20 micrometers, and the distance between nearest neighbor circular patterns is 20-400 micrometers; the preparation process of the metal-doped thin film layer can adopt a multi-metal target magnetron co-sputtering method for preparation.
According to the technical scheme, in the step S3, an evaporation or magnetron sputtering process is adopted for the deposition process of the silicon dioxide protective layer and the metal aluminum reflective film layer, the photocuring organic material comprises a photocuring organic silicon material or a photocuring organic polymer material, and the photocuring time is 5-60 seconds; in the step S4, the preparation process of the metal-doped thin film layer is prepared by a magnetron co-sputtering method of a multi-metal target; the organic upper protective layer is prepared by adopting a coating or deposition process.
According to the above technical scheme, in the step S5, the etching and thinning process for the lower end surface of the monocrystalline silicon substrate may adopt an ion beam etching and thinning process; the organic lower protective layer is prepared by adopting a coating or deposition process; the material of the lower metal electrode deposited in the etched electrode hole comprises metal gold, metal copper, metal silver, metal nickel and metal chromium.
The invention has the following beneficial effects: (1) the inorganic substance is a luminous layer; the luminescent layer is made of inorganic gallium nitride material, which has better performance than organic photoelectronic material, long service life, and can be used outdoors for a long time without being afraid of ultraviolet radiation.
(2) The defect of high brittleness of an inorganic thin film device is overcome; the micro-column is adopted to fill the photocuring organic layer, so that the defect of high brittleness of inorganic matters can be avoided, and the flexibility of the inorganic gallium nitride device is realized.
(3) The full-color flexible photoelectronic luminescence is realized at low cost; the gallium nitride microcolumns with different sizes are prepared by one-time epitaxial growth, the light-emitting wavelength of the gallium nitride microcolumns is related to the size of the microcolumns, and red light, green light, blue light and the like can be realized according to design, so that full-color light emission can be realized conveniently, and the manufacturing cost is lower than that of the existing spliced full-color light emission.
Drawings
The invention will be further described with reference to the accompanying drawings and examples, in which:
FIG. 1 is a block diagram of an inorganic flexible optoelectronic device according to an embodiment of the present invention;
FIG. 2 is a flow chart of the fabrication of an inorganic flexible optoelectronic device according to an embodiment of the present invention;
FIG. 3 is a schematic view of a titanium-silver metal doped thin film layer deposited on the single crystal silicon substrate in FIG. 2;
FIG. 4 is a schematic view of a titanium-silver metal doped thin film layer being subjected to patterned photolithography and etching;
FIG. 5 is a schematic view of a graphene layer grown on a patterned metal-doped thin film layer;
FIG. 6 is a schematic diagram of a gallium nitride micropillar array grown on a graphene layer;
FIG. 7 is a schematic diagram of a protective layer of silicon dioxide deposited on the GaN micropillar array;
FIG. 8 is a schematic view of a metal aluminum reflective layer deposited on the surface of the silicon dioxide protective layer;
FIG. 9 is a schematic view of injecting low viscosity photo-curing silicone material between the GaN micropillar arrays;
FIG. 10 is a schematic view showing the removal of the silicon dioxide passivation layer and the aluminum metal reflective layer in the area above the top of the GaN micropillar array;
FIG. 11 is a schematic view of a metal-doped thin film layer deposited on a p-type heavily doped InGaN layer and a photo-cured organic material;
FIG. 12 is a schematic diagram of a PDMS material prepared by a deposition process on a metal-doped thin film layer as an upper protection layer of an organic material;
FIG. 13 is a schematic view of a single crystal silicon substrate backside being thinned by an ion beam thinning process;
FIG. 14 is a schematic view of the deposition of metallic gold as a metallic electrode and a metallic wire in the etched electrode hole;
FIG. 15 is a schematic view of the deposition of an organic lower protective layer on the lower end face;
FIG. 16 is a schematic diagram of an embodiment of a gallium nitride micropillar;
FIG. 17 is a perspective view of the arrangement of the GaN micropillars in the embodiment of the present invention;
FIG. 18 is a schematic view of the wire control of the lower end of the silicon thin film layer in the embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
The first embodiment is as follows: fig. 1 is a structural diagram of an inorganic flexible optoelectronic device in an embodiment of the present invention, and the structure of the inorganic flexible optoelectronic device sequentially includes from bottom to top: the organic matter lower protective layer 100, the silicon thin film layer 200, the patterned metal-doped thin film layer 300, the graphene layer 400, the gallium nitride micro-column array 500, the silicon dioxide protective layer 601, the metal aluminum reflective film layer 602, the metal-doped thin film layer 700 and the organic matter upper protective layer 800. Each group of the gallium nitride micro-column array 500 comprises four gallium nitride micro-columns with different diameters and sizes, namely a gallium nitride micro-column I510, a gallium nitride micro-column II 520, a gallium nitride micro-column III 530 and a gallium nitride micro-column IV 540, wherein the gallium nitride micro-columns 510, 520, 530 and 540 comprise an n-type heavily doped gallium nitride layer 501, an n-type doped gallium nitride layer 502, an indium gallium nitride quantum well light-emitting layer 503, a p-type doped gallium nitride layer 504 and a p-type heavily doped indium gallium nitride layer 505 from bottom to top. The gap of the gan micro-pillar array 500 is filled with a photo-cured organic material 603. The organic lower protective layer 100 is 50-500 microns thick and is made of PDMS or PMMA; the thickness of the silicon thin film layer 200 is 10-50 micrometers. The graphical metal-doped thin film layer 300 is an aluminum-doped silver thin film or a titanium-doped silver thin film or an aluminum-titanium co-doped silver thin film, and the thickness of the graphical metal-doped thin film layer is 2-5 nanometers; the height of the gallium nitride micro-column array 400 is 5-15 microns; the thickness of the silicon dioxide protective layer 601 is 0.5 to 2 micrometers, and the thickness of the metallic aluminum reflective film layer 602 is 0.5 to 2 micrometers. The metal-doped thin film layer 700 is an aluminum-doped silver thin film, a nickel-doped silver thin film or an aluminum-nickel co-doped silver thin film, and the thickness of the metal-doped thin film is 3-6 nanometers; the thickness of the organic upper protective layer 800 is 50-500 micrometers, and the material is PDMS or PMMA organic.
The second embodiment is that the preparation method of the flexible optoelectronic device comprises the following steps:
s1, preparing a graphical metal-doped thin film layer, depositing a metal-doped thin film layer 301 on a monocrystalline silicon substrate 201, carrying out thermal annealing on the metal-doped thin film layer 301, and then carrying out photoetching and etching treatment to form a graphical metal-doped thin film layer 300. The metal co-doped thin film layer 301 is 2-5 nm thick and is made of an aluminum-doped silver film, a titanium-doped silver film or an aluminum-titanium co-doped silver film. The annealing process temperature is 200-500 ℃, the annealing atmosphere is high-purity nitrogen or helium, and the annealing time is 1-5 minutes. The size of the graphical metal-doped thin film layer is circular, the sizes of different metal patterns are different, the diameters of the circular metal-doped thin film layer are 1-5 micrometers, 5-10 micrometers, 10-15 micrometers and 15-20 micrometers respectively, and the distance between the metal patterns is 20-400 micrometers.
S2, preparing a gallium nitride micro-column array, growing a graphene layer 400 on the graphical metal-doped thin film layer 300, and then growing a gallium nitride micro-column array 500 on the graphene layer 400. The thickness of the graphene layer 400 is 2-5 nm. The gallium nitride micro-column array 500 is 5-15 microns in height and comprises an n-type heavily doped gallium nitride layer 501, an n-type doped gallium nitride layer 502, an indium gallium nitride quantum well light-emitting layer 503, a p-type doped gallium nitride layer 504 and a p-type heavily doped indium gallium nitride layer 505 from bottom to top.
S3, preparing a side protection layer and a gap filling layer, depositing a silicon dioxide protection layer 601 on the upper surface and the side wall surface of the top of the gallium nitride micro-column array 500, continuously depositing a metal aluminum reflection layer 602, filling a light-cured organic material 603 in the gap of the gallium nitride micro-column array 500 wrapped with the silicon dioxide protection layer 601 and the metal aluminum reflection layer 602, and then performing ultraviolet irradiation on the light-cured organic material 603 to cure the light-cured organic material 603. The thickness of the silicon dioxide protective layer 601 is 1 micron to 5 microns, and the thickness of the metal aluminum reflecting layer 602 is 1 micron to 5 microns. The deposition process of the silicon dioxide protective layer 601 and the metallic aluminum reflective layer 602 may adopt evaporation or magnetron sputtering and other processes. The photo-cured organic material 603 comprises a photo-cured organic silicon material or a photo-cured organic polymer material and the like, and the photo-curing time is 5 seconds to 60 seconds.
S4, preparing an upper electrode and an upper protective layer, etching and removing the silicon dioxide protective layer 601 and the metal aluminum reflecting layer 602 until the p-type heavily doped indium gallium nitride layer 505 is exposed, depositing a metal doped thin film layer 700 on the p-type heavily doped indium gallium nitride layer 505 and the light-cured organic material 603, and preparing an organic upper protective layer 800 on the metal doped thin film layer 700. The thickness of the metal-doped thin film 700 is 3 to 6 nanometers. The material comprises an aluminum-doped silver film, a copper-doped silver film and an aluminum-copper-doped silver film. The organic upper protective layer 800 comprises PDMS, PMMA and the like, and the thickness is 50-500 microns.
S5, preparing a lower electrode and a lower protective layer, etching and thinning the lower end face of the monocrystalline silicon substrate 201 to obtain a silicon thin film layer 200, preparing an electrode hole 202 in the silicon thin film layer 200 through photoetching and etching processes until the graphical metal-doped thin film layer 300 is exposed, depositing a metal lower electrode 203 and a metal wire 204 in the etched electrode hole 202, and then preparing the organic lower protective layer 100 on the lower end face. The material of the metal lower electrode 203 deposited in the electrode hole 202 includes metal gold, metal copper, metal silver, metal nickel, metal chromium, and the like. The etching and thinning process for the lower end face of the monocrystalline silicon substrate 201 can adopt processes such as ion beam etching and thinning, and the organic matter lower protective layer 100 can be prepared by processes such as coating and deposition. The organic lower protective layer 100 is made of PDMS, PMMA and the like, and the thickness of the organic lower protective layer is 50-500 micrometers.
Example three: as shown in fig. 3, a titanium-silver metal doped thin film layer 301 with a thickness of 2 nm to 5nm is deposited on the single crystal silicon substrate 201 by a multi-metal target magnetron co-sputtering method. And carrying out thermal annealing on the titanium-silver metal doped thin film layer 301, wherein the annealing temperature is 300 ℃, and the annealing time is 2 minutes.
As shown in fig. 4, the titanium-silver metal doped thin film layer 301 is patterned, photo-etched and etched, and the patterned metal doped thin film layer 300 has a group of four circular patterns, wherein the diameters of the circular patterns are 5 microns, 7 microns, 12 microns and 15 microns respectively.
As shown in fig. 5, a graphene layer 400 is grown on the patterned metal-doped thin film layer 300 obtained in the previous step, and the thickness of the graphene layer is 5 to 10 micrometers.
As shown in fig. 6, a metal organic vapor deposition method is adopted to grow a gallium nitride micro-pillar array 500 on a graphene layer 400, and the gallium nitride micro-pillar array 500 includes an n-type heavily doped gallium nitride layer 501, an n-type doped gallium nitride layer 502, an indium gallium nitride quantum well light-emitting layer 503, a p-type doped gallium nitride layer 504, and a p-type heavily doped indium gallium nitride layer 505.
As shown in fig. 7, a protective layer 601 of silicon dioxide is deposited on the gan micropillar array 500 to a thickness of 1 μm.
As shown in fig. 8, a metallic aluminum reflective layer 602 with a thickness of 1 μm is further deposited on the surface of the silicon dioxide protective layer 601.
As shown in fig. 9, a low-viscosity photo-cured organic silicon material is injected between the gan micropillar arrays 500 as a photo-cured organic material 603, and the ambient temperature is increased to 50 to 60 ℃ to fully soak the photo-cured organic material.
The photo-curable organic material 603 is irradiated with ultraviolet rays for 45 seconds, so that the photo-curable organic material 603 is cured.
As shown in fig. 10, the silicon dioxide protection layer 601 and the metal aluminum reflective layer 602 in the region above the top of the gan micropillar array 500 are removed by an ion beam etching thinning process until the p-type heavily doped ingan 505 is exposed.
As shown in fig. 11, a metal-doped thin film layer 700, which is made of al-ni metal and has a thickness of 4 nm, is deposited on the p-type heavily doped ingaaln layer 505 and the photo-cured organic material 603 by a multi-metal target magnetron co-sputtering method.
As shown in fig. 12, a PDMS material is prepared as an organic upper protective layer 800 with a thickness of 200 μm by a deposition process on the metal-doped thin film layer 700.
As shown in fig. 13, the back surface of the single crystal silicon substrate 201 is thinned by an ion beam thinning process, so that a silicon thin film layer 200 is obtained.
A hole is etched from the back of the silicon thin film layer 200 by a dry etching process until the patterned metal-doped thin film layer 300 is exposed.
As shown in fig. 14, metallic gold is deposited in the etched electrode hole 202 as a metallic electrode 203 and a metallic wire 204.
As shown in fig. 15, an organic lower protective layer 100 is deposited on the lower end surface.
As shown in fig. 16, the structure diagram of the gallium nitride micro-pillar array 500 includes, from bottom to top, an n-type heavily doped gallium nitride layer 501, an n-type doped gallium nitride layer 502, an indium gallium nitride quantum well light-emitting layer 503, a p-type doped gallium nitride layer 504, and a p-type heavily doped indium gallium nitride layer 505.
Fig. 17 is a perspective view of the positioning of the gallium nitride micropillars, which is a gallium nitride micropillars 510, 520, 530, 540 with four diameters, wherein the direction of the arrow is a front view, i.e., the direction shown in fig. 1.
Fig. 18 is a schematic view of the wire control at the lower end of the silicon thin film layer 200, and the right wire is connected to the controller 900.
The above examples are only used to illustrate the material selection and the process of the present invention, wherein the dimensions are not specifically described and can be arbitrarily selected, and the dimensions of the final product can be specifically designed and manufactured according to actual needs.
It will be understood that modifications and variations can be made by persons skilled in the art in light of the above teachings and all such modifications and variations are intended to be included within the scope of the invention as defined in the appended claims.
Claims (7)
1. S1, preparing a graphical metal-doped thin film layer, depositing a metal-doped thin film layer on a monocrystalline silicon substrate, carrying out thermal annealing on the metal-doped thin film layer, and then carrying out photoetching and etching treatment to form the graphical metal-doped thin film layer;
s2, preparing a gallium nitride micro-column array, growing a graphene layer on the graphical metal-doped thin film layer, and then growing the gallium nitride micro-column array on the graphene layer;
s3, preparing a side protection layer and a gap filling layer, depositing a silicon dioxide protection layer on the upper surface and the side wall surface of the top of the gallium nitride micro-column array, continuously depositing a metal aluminum reflection film layer, filling a photocuring organic material in the gap of the gallium nitride micro-column array wrapped with the silicon dioxide protection layer and the metal aluminum reflection film layer, and then performing ultraviolet irradiation on the photocuring organic material to cure the photocuring organic material;
s4, preparing an upper electrode and an upper protective layer, etching and removing the silicon dioxide protective layer and the metal aluminum reflective film layer until the p-type heavily doped indium gallium nitride layer is exposed, depositing a metal doped thin film layer on the p-type heavily doped indium gallium nitride layer and the photocuring organic material, and preparing an organic upper protective layer on the metal doped thin film layer;
s5, preparing a lower electrode and a lower protective layer, etching and thinning the lower end face of the monocrystalline silicon substrate to obtain a silicon thin film layer, preparing an electrode hole in the silicon thin film layer through photoetching and etching processes until the graphical metal-doped thin film layer is exposed, depositing a metal lower electrode and a metal lead in the etched electrode hole, and then preparing an organic lower protective layer on the lower end face.
2. The method for preparing the structure of the inorganic flexible optoelectronic device according to claim 1, wherein in the step S1, the temperature of the thermal annealing process is 200 ℃ to 500 ℃, the annealing atmosphere is high-purity nitrogen, and the annealing time is 1 minute to 5 minutes; the patterned metal film layer is circular, every four circular patterns form a group, the diameters of the circular patterns are respectively 1-5 micrometers, 5-10 micrometers, 10-15 micrometers and 15-20 micrometers, and the distance between nearest neighbor circular patterns is 20-400 micrometers; the preparation process of the metal-doped thin film layer can adopt a multi-metal target magnetron co-sputtering method for preparation.
3. The method for preparing an inorganic flexible optoelectronic device structure according to claim 1 or 2, wherein in the step S3, the deposition process of the silicon dioxide protective layer and the metal aluminum reflective film layer adopts an evaporation or magnetron sputtering process, the photo-cured organic material comprises a photo-cured organic silicon material or a photo-cured organic polymer material, and the photo-curing time is 5 seconds to 60 seconds; in the step S4, the preparation process of the metal-doped thin film layer is prepared by a magnetron co-sputtering method of a multi-metal target; the organic upper protective layer is prepared by adopting a coating or deposition process.
4. The method for preparing the structure of the inorganic flexible optoelectronic device according to claim 1 or 2, wherein in the step S5, the etching and thinning process for the lower end surface of the monocrystalline silicon substrate may adopt an ion beam etching and thinning process; the organic lower protective layer is prepared by adopting a coating or deposition process; the material of the lower metal electrode deposited in the etched electrode hole comprises metal gold, metal copper, metal silver, metal nickel and metal chromium.
5. An inorganic flexible optoelectronic device structure prepared using the method of claim 1, comprising, in order from bottom to top: the organic matter lower protective layer, the silicon thin film layer, the graphical metal doped thin film layer, the graphene layer, the gallium nitride micro-column array, the silicon dioxide protective layer, the metal aluminum reflective film layer, the metal doped thin film layer and the organic matter upper protective layer, wherein each group of gallium nitride micro-column array comprises four gallium nitride micro-columns with different diameters and sizes, namely a gallium nitride micro-column I, a gallium nitride micro-column II, a gallium nitride micro-column III and a gallium nitride micro-column IV, the gallium nitride micro-column comprises an n-type heavily doped gallium nitride layer, an n-type doped gallium nitride layer, an indium gallium nitride quantum well luminescent layer, a p-type doped gallium nitride layer and a p-type heavily doped indium gallium nitride layer from bottom to top, light-cured organic materials are arranged in gaps of the gallium nitride micro-column array, the diameter of the bottom of the gallium nitride micro-column I is 1-5 micrometers, the diameter of the bottom of the gallium nitride micro-column II is 5-10 micrometers, the diameter of the bottom, the diameter of the bottom of the gallium nitride microcolumn IV is 15-20 microns, the thickness of the organic matter lower protective layer is 50-500 microns, and the material is PDMS or PMMA; the thickness of the silicon film layer is 10-50 microns.
6. The inorganic flexible optoelectronic device structure of claim 5, wherein the patterned metal-doped thin film layer is an aluminum-doped silver film, a titanium-doped silver film, or an aluminum-titanium co-doped silver film, and has a thickness of 2 nm to 5 nm; the height of the gallium nitride micro-column array is 5-15 micrometers; the thickness of the silicon dioxide protective layer is 0.5-2 microns, and the thickness of the metal aluminum reflecting film layer is 0.5-2 microns.
7. The inorganic flexible optoelectronic device structure of claim 6, wherein the metal-doped thin film layer is an aluminum-doped silver film, a nickel-doped silver film, or an aluminum-nickel co-doped silver film, and has a thickness of 3 nm to 6 nm; the thickness of the organic matter upper protective layer is 50-500 microns, and the material is PDMS or PMMA organic matter.
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