CN110323310A - Light emitting diode - Google Patents
Light emitting diode Download PDFInfo
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- CN110323310A CN110323310A CN201910386672.3A CN201910386672A CN110323310A CN 110323310 A CN110323310 A CN 110323310A CN 201910386672 A CN201910386672 A CN 201910386672A CN 110323310 A CN110323310 A CN 110323310A
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- light emitting
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- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 11
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 10
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 4
- 241000790917 Dioxys <bee> Species 0.000 description 3
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- VDGJOQCBCPGFFD-UHFFFAOYSA-N oxygen(2-) silicon(4+) titanium(4+) Chemical compound [Si+4].[O-2].[O-2].[Ti+4] VDGJOQCBCPGFFD-UHFFFAOYSA-N 0.000 description 2
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- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The present invention provides a kind of light emitting diode, including the first type semiconductor layer, luminescent layer, the second type semiconductor layer, first electrode, second electrode, Bragg reflection structure, conductive layer and multiple insulating patterns.Luminescent layer is between the first type semiconductor layer and the second type semiconductor layer.First electrode is electrically connected the first type semiconductor layer.Second electrode is electrically connected the second type semiconductor layer.First electrode is all located at phase the same side of Bragg reflection structure with second electrode.Conductive layer configures between Bragg reflection structure and the second type semiconductor layer.Insulating pattern configures between conductive layer and the second type semiconductor layer, and contact area second type semiconductor layer of the conductive layer other than insulating pattern.In technical solution of the present invention, configuration can be coated on well in Bragg reflection structure in the film layer in Bragg reflection structure, and facilitate the performance boost of light emitting diode.
Description
Technical field
The invention relates to one kind to be suitable in light emitting diode, and especially a kind of with Bragg reflection structure
Light emitting diode.
Background technique
The luminous efficiency of light emitting diode (Light emitting diode, LED) is constantly promoted in recent years.Another party
Face, compared to conventional bulb, light emitting diode is had the following advantages: it is for example small in size, the service life is long, the driving of low-voltage/electric current,
It is not easily broken, without the characteristics such as mercury (without pollution problem) and luminous efficiency good (power saving).Due to these above-mentioned advantages with
And the luminous efficiency of light emitting diode quickly develops so that light emitting diode replaces conventional bulb gradually, therefore in recent years
Light emitting diode has been attached great importance in lighting area and display field.
The luminous efficiency for promoting light emitting diode is exactly that light emitting diode can apply key in different fields.Generally
For, Distributed Bragg Reflection structure (Distributed Bragg can be made in the side of light emitting diode
Reflector, DBR), some light that the luminescent layer of light emitting diode is issued shines by reflection towards scheduled
Launch with improving extraction efficiency (Light Extraction Efficiency) in direction.
Summary of the invention
The present invention provides a kind of light emitting diode, excellent performance.
The present invention provides a kind of light emitting diode, including the first type semiconductor layer, luminescent layer, the second type semiconductor layer,
One electrode, second electrode, Bragg reflection structure, conductive layer and multiple insulating patterns.Luminescent layer is located at the first type semiconductor
Between layer and the second type semiconductor layer.First electrode is electrically connected the first type semiconductor layer.Second electrode is electrically connected second type
Semiconductor layer.First electrode is all located at phase the same side of Bragg reflection structure with second electrode.Conductive layer configures in Prague
Between catoptric arrangement and the second type semiconductor layer.Insulating pattern configures between conductive layer and the second type semiconductor layer, and conductive
Contact area second type semiconductor layer of the layer other than insulating pattern.Each insulating pattern has one towards the second type semiconductor layer
First surface, a second surface and an inclined-plane backwards to the second type semiconductor layer.Inclined-plane is connected to first surface and the second table
It is tilted between face and relative to first surface and second surface.
In one embodiment of this invention, above-mentioned inclined-plane and first surface accompany an acute angle in the material of insulating pattern
θ1。
In one embodiment of this invention, 10 °≤θ1≦80°。
In one embodiment of this invention, 30 above-mentioned °≤θ1≦50°。
In one embodiment of this invention, above-mentioned each insulating pattern includes multiple first sublayers and multiple second sublayers.
First sublayer is alternately stacked with the second sublayer.
In one embodiment of this invention, the material of the first above-mentioned sublayer is different with the material of the second sublayer.
In one embodiment of this invention, the material of the first above-mentioned sublayer is identical as the material of the second sublayer, and first
The density of sublayer is different with the density of the second sublayer.
In one embodiment of this invention, the material of above-mentioned each first sublayer includes tantalum pentoxide (Ta2O5), dioxy
Change zirconium (ZrO2), niobium pentaoxide (Nb2O5), hafnium oxide (HfO2), titanium dioxide (TiO2) or above-mentioned combination.
In one embodiment of this invention, the material of above-mentioned each second sublayer includes silica (SiO2) combination.
In one embodiment of this invention, the material of above-mentioned each first sublayer is identical as the material of each second sublayer, and
The density of each first sublayer is different with the density of each second sublayer.
In one embodiment of this invention, above-mentioned Bragg reflection structure is at least covering 0.8X nm's to 1.8X nm
The reflectivity of reflected wavelength range is 95% or more.Luminescent layer has peak value in emission wavelength range to issue light beam, light beam
Wavelength, and X is the peak wavelength of emission wavelength range.
In one embodiment of this invention, the first above-mentioned type semiconductor layer has first part and second part.Hair
Photosphere is stacked over the first portion, second part by first part extend outwardly and protrude from the area of luminescent layer with the first electricity
Pole is electrically connected.First electrode, luminescent layer, the second type semiconductor layer and second electrode are located at the first of the first type semiconductor layer
Side.
In one embodiment of this invention, above-mentioned Bragg reflection structure is located at the first side of the first type semiconductor layer.
Bragg reflection structure is located at least between second electrode and the second type semiconductor layer.Bragg reflection structure has multiple run through
Opening.Second electrode filling is through opening, to be electrically connected the second type semiconductor layer.
In one embodiment of this invention, insulating pattern corresponds to through opening.
The present invention provides a kind of light emitting diode, including the first type semiconductor layer, luminescent layer, the second type semiconductor layer,
One electrode, second electrode, Bragg reflection structure, conductive layer and multiple insulating patterns.Luminescent layer is located at the first type semiconductor
Between layer and the second type semiconductor layer.First electrode is electrically connected the first type semiconductor layer.Second electrode is electrically connected second type
Semiconductor layer.First electrode is all located at phase the same side of Bragg reflection structure with second electrode.Conductive layer configures in Prague
Between catoptric arrangement and the second type semiconductor layer.Insulating pattern configures between conductive layer and the second type semiconductor layer, and conductive
Contact area second type semiconductor layer of the layer other than insulating pattern.Each insulating pattern includes multiple first sublayers and multiple second
Sublayer, and the first sublayer is alternately stacked with the second sublayer.
In one embodiment of this invention, above-mentioned light emitting diode further includes growth substrate.First type semiconductor layer, hair
Photosphere, the second type semiconductor layer and Bragg reflection structure are sequentially stacked in the first surface of growth substrate.
In one embodiment of this invention, above-mentioned light emitting diode further includes the first insulating layer and second insulating layer.Cloth
Glug catoptric arrangement is between the first insulating layer and second insulating layer.First insulating layer is located at Bragg reflection structure and second
Between type semiconductor layer.Second insulating layer is between Bragg reflection structure and second electrode.
In one embodiment of this invention, the material of the first above-mentioned sublayer is different with the material of the second sublayer.
In one embodiment of this invention, the material of the first above-mentioned sublayer is identical as the material of the second sublayer, and first
The density of sublayer is different with the density of the second sublayer.
In one embodiment of this invention, the material of above-mentioned each first sublayer includes tantalum pentoxide (Ta2O5), dioxy
Change zirconium (ZrO2), niobium pentaoxide (Nb2O5), hafnium oxide (HfO2), titanium dioxide (TiO2) or above-mentioned combination.
In one embodiment of this invention, the material of above-mentioned each second sublayer includes silica (SiO2) combination.
In one embodiment of this invention, the material of above-mentioned each first sublayer is identical as the material of each second sublayer, and
The density of each first sublayer is different with the density of each second sublayer.
In one embodiment of this invention, above-mentioned Bragg reflection structure is at least covering 0.8X nm's to 1.8X nm
The reflectivity of reflected wavelength range is 95% or more.Luminescent layer has peak value in emission wavelength range to issue light beam, light beam
Wavelength, and X is the peak wavelength of emission wavelength range.
In one embodiment of this invention, the first above-mentioned type semiconductor layer has first part and second part.Hair
Photosphere is stacked over the first portion, second part by first part extend outwardly and protrude from the area of luminescent layer with the first electricity
Pole is electrically connected.First electrode, luminescent layer, the second type semiconductor layer and second electrode are located at the first of the first type semiconductor layer
Side.
In one embodiment of this invention, above-mentioned Bragg reflection structure is located at the first side of the first type semiconductor layer.
Bragg reflection structure is located at least between second electrode and the second type semiconductor layer.Bragg reflection structure has multiple run through
Opening.Second electrode filling is through opening, to be electrically connected the second type semiconductor layer.
In one embodiment of this invention, insulating pattern corresponds to through opening.
Based on above-mentioned, in the light emitting diode of one embodiment of the invention, the side wall of Bragg reflection structure is an inclined-plane,
Therefore configuration can be coated on well in Bragg reflection structure in the film layer in Bragg reflection structure, and facilitate luminous two
The performance boost of pole pipe.
To make the foregoing features and advantages of the present invention clearer and more comprehensible, special embodiment below, and it is detailed to cooperate attached drawing to make
Carefully it is described as follows.
Detailed description of the invention
Figure 1A is shown as the sectional view of the light emitting diode of one embodiment of the invention；
Figure 1B is the reflecting spectrum figure of the Bragg reflection structure of one embodiment of the invention；
Fig. 1 C is the reflecting spectrum figure of the Bragg reflection structure of one embodiment of the invention；
Fig. 2 shows the sectional views of the light emitting diode for another embodiment of the present invention；
Fig. 3 is shown as the sectional view of the light emitting diode of another embodiment of the present invention；
Fig. 4 is shown as the sectional view of the light emitting diode of one more embodiment of the present invention；
Fig. 5 is shown as the sectional view of the light emitting diode of another embodiment of the present invention；
Fig. 6 is the diagrammatic cross-section of the metal layer of one embodiment of the invention；
Fig. 7 is the upper schematic diagram of the light emitting diode of one embodiment of the invention；
Fig. 8 is the diagrammatic cross-section of the line A-B corresponding to Fig. 7；
Fig. 9 is the diagrammatic cross-section of the line B-C corresponding to Fig. 7；
Figure 10 is the diagrammatic cross-section of the line C-D corresponding to Fig. 7；
Figure 11 is the diagrammatic cross-section of the line E-F corresponding to Fig. 7；
Figure 12 is the diagrammatic cross-section of the line G-H corresponding to Fig. 7；
Figure 13 is the diagrammatic cross-section of the Bragg reflection structure of one embodiment of the invention；
Figure 14 is the diagrammatic cross-section of the Bragg reflection structure of another embodiment of the present invention；
Figure 15 is the diagrammatic cross-section of the Bragg reflection structure of yet another embodiment of the invention；
Figure 16 is the diagrammatic cross-section of the Bragg reflection structure of further embodiment of this invention；
Figure 17 is the sectional view of the light emitting diode of one embodiment of the invention；
Figure 18 A is the insulating pattern of one embodiment of the invention and the enlarged diagram of conductive layer；
Figure 18 B is the insulating pattern of comparative example and the enlarged diagram of conductive layer；
Figure 19 A is the schematic diagram of the insulating pattern of one embodiment of the invention；
Figure 19 B is the schematic diagram of the insulating pattern of another embodiment of the present invention；
Figure 20 is the diagrammatic cross-section of the light emitting diode of one embodiment of the invention；
Figure 21 is the diagrammatic cross-section of the light emitting diode of one embodiment of the invention；
Figure 22 is the diagrammatic cross-section of the light emitting diode of one embodiment of the invention；
Figure 23 is the diagrammatic cross-section of the light emitting diode of one embodiment of the invention；
Figure 24 is the diagrammatic cross-section of the light emitting diode of one embodiment of the invention.
Description of symbols:
12,22,162, B12, B22: first refractive layer；
14,24,164, B14, B24: the second refracting layer；
100,100 ', 100A, 200 ', 200A, 300 ', 300A, 400 ', 400A, 500,500A: light emitting diode；
101: conductive layer；
103,103A, 103A ', 103A1,103A2: insulating pattern；
103f: first surface；
103g: second surface；
103h: inclined-plane；
105: insulating layer；
105a, I1: the first insulating layer；
105b, I2: second insulating layer；
107: electronic pads；
110: the first type semiconductor layers；
111: the first sides；
112: second side；
120: luminescent layer；
130: the second type semiconductor layers；
140: first electrode；
150: second electrode；
160,160 ', 260 ', 360 ', 560 ', DBR1, DBR2, DBR3, DBR4: Bragg reflection structure；
103d: side wall；
103e: bottom surface；
103f: first surface；
103g: second surface；
103h: inclined-plane；
166,167, O1: through opening；
170: growth substrate；
171: first surface；
172: second surface；
180: the first metal layer；
180a, 190a: weldering portion；
180b, 190b: refer to portion；
190: second metal layer；
B1, B2: main stack layer；
C1: transition stack layer；
C12: third reflect layer；
C14: fourth reflect layer；
D1, D2, D3, D4: repairing stack layer；
D12, D22: the 5th refracting layer；
D14, D24: the 6th refracting layer；
L, L1, L2, L2 ': light beam；
M: metal layer；
MT: top surface；
MB: bottom surface；
MS: side surface；
N140, N150: notch；
P1: first part；
P2: second part；
S140, S150: side；
SL1, SL3: the first sublayer；
SL2, SL4: the second sublayer；
T1: first thickness；
T2: second thickness；
T3: third thickness；
θ: angle；
θ1: acute angle；
θ1': angle.
Specific embodiment
Figure 1A is shown as the sectional view of the light emitting diode of one embodiment of the invention.Figure 1A is please referred to, specifically, figure
It is horizontal light emitting diode shown by 1A, and is a kind of light emitting diode that can be applied to wire-bonding package.Light-emitting diodes
Pipe 100 includes the first type semiconductor layer 110, luminescent layer 120, the second type semiconductor layer 130, first electrode 140, second electrode
150 and Bragg reflection structure 160.The first type semiconductor layer 110 in the present embodiment and the second type semiconductor layer 130
One of them is n type semiconductor layer (for example, n-GaN), and another one is p type semiconductor layer (for example, p-GaN).Luminescent layer 120
Between the first type semiconductor layer 110 and the second type semiconductor layer 130, and luminescent layer 120 is to issue a light beam L, wherein
The emission wavelength range of light beam L has an at least peak wavelength.First electrode 140 is electrically connected the first type semiconductor layer 110.The
Two electrodes 150 are electrically connected the second type semiconductor layer 130.First type semiconductor layer 110, luminescent layer 120 and second type semiconductor
Layer 130 is all located at phase the same side of Bragg reflection structure 160.Bragg reflection structure 160 is at least covering 0.8X nm extremely
The reflectivity of a reflected wavelength range of 1.8X nm is 90% or more, wherein at least covering the one of 0.9X nm to 1.6X nm
The reflectivity of reflected wavelength range is 95% or more, and wherein X is the peak wavelength of emission wavelength range.
In one embodiment, luminescent layer 120 can be quantum well structures (Quantum Well, QW).In other embodiments
In, luminescent layer 120 can be multiple quantum trap structure (Multiple Quantum Well, MQW), wherein multiple quantum trap knot
Structure includes the multiple quantum well layers (Well) and multiple quantum barrier layers (Barrier) being arranged alternately in a repetitive fashion.In addition,
The composition material of luminescent layer 120 includes that the peak wavelength that can be issued falls in 320nm (ultraviolet light), 430nm be extremely into 430nm
The compound semiconductor group of (blue light) or 500nm light beam L of the emission wavelength ranges such as (green light) into 550nm in 500nm
At the composition variation or structure design of luminescent layer 120 can change the emission wavelength range of light beam L, and the present invention is not with this
It is limited.
Specifically, in the present embodiment, the first type semiconductor layer 110 has a first part P1 and a second part
P2.Luminescent layer 120 is stacked on first part P1.Second part P2 is extended outwardly by first part P1 and protrudes from luminescent layer
To be electrically connected with first electrode 140 except 120 area.First type semiconductor layer 110 is with one first side 111 and relatively
Second side 112 in the first side 111.Luminescent layer 120, the second type semiconductor layer 130, first electrode 140 and second electrode 150
It is all located at the first side 111 of the first type semiconductor layer 110.Bragg reflection structure 160 is then positioned at the first type semiconductor layer 110
Second side 112.
Specifically, the light emitting diode 100 of the present embodiment further includes a growth substrate 170.Growth substrate 170 has one
First surface 171 and a second surface 172 relative to first surface 171, wherein the material of growth substrate 170 is, for example, C-
The sapphire substrate (Sapphire) of Plane, R-Plane or A-Plane or other transparent materials.In addition, lattice constant connects
The single crystal compound for being bordering on the first type semiconductor layer 110 is also suitable for material as growth substrate 170.First type of the present embodiment
Semiconductor layer 110, luminescent layer 120 and the second type semiconductor layer 130 sequentially grow up and are stacked in the first surface of growth substrate 170
171.Bragg reflection structure 160 then configures the second surface 172 in growth substrate 170.In other examples, luminous two
Pole pipe 100 can not have growth substrate 170, and Bragg reflection structure 160 can be only fitted to the first type semiconductor layer 110
Second side 112.
In general, the light beam L that luminescent layer 120 is issued can be issued towards various directions, for example, light beam L1 and light beam L2 by
Luminescent layer 120 is issued towards different directions.But, light emitting diode 100 is designed as being main with the light emission direction of light beam L1
When light emission direction, the possibly luminous efficiency that can not be utilized and limit of light beam L2.Therefore, in the present embodiment, Prague is anti-
Penetrating structure 160 is the light beam L2 reflection that will advance downward, and light beam L2 is guided toward the top of growth substrate 170 and is penetrated
Out, that is, constitute the reflected beams L2 '.In this way, the light that luminescent layer 120 is issued, can shine efficiently towards scheduled
Direction issues and has good luminous efficiency.
Specifically, Bragg reflection structure 160 mainly by least one main stack layer area, at least a transition stack layer area with
And at least one form combined by repairing stack layer area, wherein main stack layer area, transition stack layer area and repairing stack layer area are each
Not Bao Kuo multiple first refractive layers 162 and multiple second refracting layers 164, these first refractive layers 162 and these second refraction
Layer 164 is alternately stacked.Refractive index of the refractive index of each first refractive layer 162 different from each second refracting layer 164.Wherein transition stacks
Floor area can be between adjacent two main stack layer area, and to increase the reflectivity in adjacent two main stack layer area, repairing stack layer area is extremely
Less in addition the side positioned at main stack layer area further increases Bragg reflection knot to be added to the reflectivity in main stack layer area
The structure of the reflectivity of structure, wherein transition stack layer area can be located between adjacent two repairing stack layer area, and main stack layer area can
Between two repairing stack layer areas, to further increase in the reflectivity in adjacent two main stack layer area.With in other words, Prague
Catoptric arrangement 160 is alternately arranged by these first refractive layers 162 and the second refracting layer 164 forms periodic structure, part week
Phase structure, gradual change increase structure or gradual change reduces structure, that is to say, that at least one adjacent two in Bragg reflection structure 160
It is the second refracting layer 164 that a layer of meeting, which is that have one be 162 another one of first refractive layer,.In one embodiment, these first refractives
Layer 162 and the respective thickness of the second refracting layer 164 and material can the reflected wavelength range of Bragg reflection structure 160 it is related.
Wherein the structure in these main stack layer areas, transition stack layer area or repairing stack layer area is by first refractive floor 162 and the second folding
It penetrates layer 164 and is alternately arranged composition, can have same period structure, different cycles structure, gradual change to increase structure or gradual change reduction
Structure composition, the periodic structure in main stack layer area, partial periodicity structure, gradual change increases structure or gradual change reduces the group number of plies of structure
Increase structure greater than the periodic structure in transition stack layer area or repairing stack layer area, partial periodicity structure, gradual change or gradual change is reduced
The group number of plies of structure, transition stack layer area include at least the material that adjacent two main stack layer area is included, and material can be one
Identical material or identical refractive material.In addition, the thickness of these first refractive layers 162 and these the second refracting layers 164 can be with
It is mutually the same or different.
The material of the first refractive layer 162 of the present embodiment includes tantalum pentoxide (Ta2O5), zirconium dioxide (ZrO2), five oxygen
Change two niobium (Nb2O5), hafnium oxide (HfO2), titanium dioxide (TiO2) or above-mentioned combination.On the other hand, second refracting layer 164
Material includes silica (SiO2).By selection first refractive layer 162 and the material of the second refracting layer 164, light beam can be made
The probability that L2 is absorbed by first refractive layer 162 and the second refracting layer 164 declines, to increase the probability that light beam L2 is reflected, because
And the luminous efficiency and brightness of light emitting diode 100 can be improved.Specifically, in the present embodiment, Bragg reflection structure
160 have good reflectivity (95% or more) for different reflected wavelength ranges, so that light emitting diode 100 is appropriate to application
In the light emitting device for needing to issue different emission wavelength ranges.Specifically, if by be closely adjacent to each other one layer of first refractive layer
162 and one layer of second refracting layer 164 when being considered as a stack layer group, the Bragg reflection structure applied to light emitting diode 100
160 may include 4 up to 100 or less or more stack layer groups.Also, the quantity of lamination group can be according to required
Reflectivity properties and adjust, the present invention is not limited thereto, for example, can constitute cloth using 30 to 50 stack layer groups
Glug catoptric arrangement 160.
If the light beam L that light emitting diode 100 provides is ultraviolet light, the peak wavelength of emission wavelength range can be fallen in
320nm is into 430nm.At this point, the material of the first refractive layer 162 in Bragg reflection structure 160 may be selected to contain tantalum (Ta)
The material of element such as tantalum pentoxide (Ta2O5), and silica (SiO may be selected in the material of the second refracting layer 1642), but not with
This is limited.For example, when the peak wavelength of emission wavelength range is 400nm, the present embodiment can by the material of refracting layer,
The adjustment of thickness and lamination group number is so that Bragg reflection structure 160 is at least covering 320nm (0.8 times of peak wavelength) extremely
90% or more reflectivity can be provided in the reflected wavelength range of 720nm (1.8 times of peak wavelengths).In addition, at other
In preferred embodiment, when the peak wavelength of emission wavelength range is 400nm, wherein Bragg reflection structure 160 is at least covering
360nm (0.9 times of peak wavelength) can provide 95% into the reflected wavelength range of 560nm (1.4 times of peak wavelengths)
Above reflectivity.
Figure 1B is the reflecting spectrum figure of the Bragg reflection structure of another embodiment of the present invention, and wherein the horizontal axis of Figure 1B is wave
The long and longitudinal axis is and to refer to than reflectivity reflection of the reflectivity compared to aluminum metal layer of Bragg reflection structure than reflectivity
Rate.In one embodiment, the Bragg reflection structure of the reflecting spectrum with Figure 1B is by Ta2O5As first refractive layer
SiO2As the second reflecting layer.Also, first refractive layer and the second refracting layer are each 30 layers in Bragg reflection structure, and
First refractive layer and the second duplicate be alternately stacked of refracting layer and constitute Bragg reflection structure.By Figure 1B it is found that compared to aluminium
For metal layer, Bragg reflection structure all has the reflection of the ratio higher than 100% in the wave-length coverage of about 350nm to 450nm
Rate.In this way, which the luminescence chip with this Bragg reflection structure can be applied to UV-light luminous device, and promoted ultraviolet
The light extraction efficiency of light light emitting device.
With continued reference to Figure 1A, if the light beam L that light emitting diode 100 provides is blue light, the peak value wave of emission wavelength range
Length can fall in 420nm into 500nm.At this point, the material of the first refractive layer 162 in Bragg reflection structure 160 may be selected
Material such as titanium dioxide (TiO containing titanium (Ti) element2), and silica may be selected in the material of the second refracting layer 164
(SiO2), but not limited to this.For example, when the peak wavelength of emission wavelength range is 450nm, the present embodiment can pass through
The adjustment of the material of refracting layer, thickness and lamination group number is so that Bragg reflection structure 160 is at least covering (0.8 times of 360nm
Peak wavelength) can be provided into the reflected wavelength range of 810nm (1.8 times of peak wavelengths) 90% or more reflection
Rate.In addition, in other embodiments, when the peak wavelength of emission wavelength range is 450nm, Bragg reflection structure 160 is being contained
Lid 405nm (about 0.9 times of peak wavelength) can be provided into the reflected wavelength range of 720nm (about 1.6 times of peak wavelengths)
95% or more reflectivity.
If the light beam L that light emitting diode 100 provides is blue light, and by containing wavelength convert knot in different encapsulation patterns
Structure such as fluorescent powder, then the light beam L that light emitting diode 100 provides inspire another excitation wavelength by Wavelength transformational structure for blue light
Peak wavelength, the peak wavelength of another excitation wavelength is greater than the peak wavelength for the light beam L that light emitting diode 100 provides, makes
Light beam contain at least one more than peak wavelength, and emission wavelength and the peak wavelength of excitation wavelength range can be fallen in
400nm is into 700nm.At this point, the material of the first refractive layer 162 in Bragg reflection structure 160 may be selected to contain titanium (Ti)
The material of element such as titanium dioxide (TiO2), and silica (SiO may be selected in the material of the second refracting layer 1642), but not with this
It is limited.
For example, when the peak wavelength of an at least emission wavelength range is 445nm and the peak wavelength of excitation wavelength is
580nm, or separately may include the peak wavelength of an excitation wavelength be 620nm, the present embodiment can material by refracting layer, thickness
Adjustment with lamination group number is so that Bragg reflection structure 160 is at least covering 356nm (the peak value wave of 0.8 times of emission wavelength
It is long) can be provided into the reflected wavelength range of 801nm (peak wavelength of 1.8 times of emission wavelengths) 90% or more reflection
Rate.In addition, in other embodiments, when the peak wavelength of emission wavelength range is 445nm, Bragg reflection structure 160 is being contained
Cover the reflection of 400.5nm (peak wavelength of about 0.9 times of emission wavelength) to 712nm (peak wavelength of about 1.6 times of emission wavelengths)
95% or more reflectivity can be provided in wave-length coverage.
If the light beam L that light emitting diode 100 provides is green light, the peak wavelength of emission wavelength range can be fallen in
500nm is into 550nm.At this point, the material of the first refractive layer 162 in Bragg reflection structure 160 may be selected to contain titanium (Ti)
The material of element such as titanium dioxide (TiO2), and silica (SiO may be selected in the material of the second refracting layer 1642), but not with this
It is limited.For example, when the peak wavelength of emission wavelength range is 525nm, the present embodiment can material, thickness by refracting layer
The adjustment of degree and lamination group number is so that Bragg reflection structure 160 is at least covering 420nm (0.8 times of peak wavelength) extremely
90% or more reflectivity can be provided in the reflected wavelength range of 997.5nm (1.9 times of peak wavelengths).In addition, at it
In his embodiment, when the peak wavelength of emission wavelength range is 525nm, Bragg reflection structure 160 is covering 472.5nm (about
0.9 times of peak wavelength) can be provided into the reflected wavelength range of 840nm (about 1.6 times of peak wavelengths) 95% or more it is anti-
Penetrate rate.
Fig. 1 C is the reflecting spectrum figure of the Bragg reflection structure of another embodiment of the present invention, and wherein the horizontal axis of Fig. 1 C is wave
It is long and the longitudinal axis is reflectivity.In one embodiment, the Bragg reflection structure of the reflecting spectrum with Fig. 1 C is by TiO2As
First refractive layer and SiO2As the second reflecting layer.Also, first refractive layer and the second refracting layer are each in Bragg reflection structure
From all be 24 layers, and first refractive layer and the second duplicate be alternately stacked of refracting layer and constitute Bragg reflection structure.By Fig. 1 C
It is found that the wave-length coverage of 400nm to 700nm all has about 90% or more in the reflecting spectrum of this Bragg reflection structure
Reflectivity, or even 100% is all maintained close in the wave-length coverage of 400nm to 600nm.Due to the reflection of Bragg reflection structure
Frequency spectrum all maintains have high reflectance in wider wave-length coverage, and such Bragg reflection structure can also under biggish visual angle
The reflecting effect of wider wave-length coverage is provided.
The reflecting spectrum of Bragg reflection structure still has height anti-in slightly below 400nm and close to the wave-length coverage of 400nm
Rate is penetrated, and the reflecting spectrum of Bragg reflection structure still has high reflectance in the slightly above wave-length coverage of 700nm, or even big
Cause still has good reflectivity in the wave-length coverage close to 800nm.In this way, the hair with this Bragg reflection structure
Optical chip can be applied to visible light light emitting device, and promote the light extraction efficiency of visible luminescent device.In addition, by Fig. 1 C it is found that
Bragg reflection structure all has in longer wave-length coverage, such as 800nm to 900nm or even 900nm or more and is lower than 40%
Reflectivity.In this way, the luminescence chip with Bragg reflection structure is cut in laser can obtain with the processing procedure of batch piece
It must be promoted.
In this embodiment, it when the luminescence chip with above-mentioned Bragg reflection structure is applied to light emitting device, shines
The emission wavelength of luminescent layer can only cover some of visible wavelength range in chip.In addition, can be also in light emitting device
It include fluorescent powder, and the excitation wavelength of fluorescent powder can cover another part of visible wavelength range.For example, it sends out
The emission wavelength of photosphere can be blue light or green light, and the excitation wavelength of fluorescent powder can be yellow light, green light or feux rouges
Deng.In this way, light emitting device can issue white light by the configuration of luminescence chip and fluorescent powder, and Prague in luminescence chip
Catoptric arrangement can wave-length coverage that efficiently reflected white-light is covered.In other words, in luminescence chip, the luminous wave of luminescent layer
The long reflection wavelength with Bragg reflection structure can only overlap, and not need consistent with each other.Certainly, in luminescence chip,
The emission wavelength of luminescent layer and the reflection wavelength of Bragg reflection structure may be designed as corresponding to each other, such as all be to fall in blue light
Wave-length coverage all falls in green wavelength or all falls in red wavelength range.
It should be noted that, following embodiments continue to use the element numbers and partial content of previous embodiment, wherein adopting herein
Be denoted by the same reference numerals identical or approximate element, and the explanation of same technique content is omitted.About clipped
Explanation can refer to previous embodiment, following embodiment will not be repeated herein.
Fig. 2 shows the sectional views of the light emitting diode for another embodiment of the present invention.Referring to figure 2., illustrated in fig. 2
Light emitting diode 100 ' is a kind of light emitting diode that can be applied to flip-chip type package.The light emitting diode 100 ' of the present embodiment
Similar to the light-emitting diode chip for backlight unit 100 of Figure 1A, main difference is, for example, to be: Bragg reflection structure 160 ' is located at the
Between two electrodes 150 and the second type semiconductor layer 130, and Bragg reflection structure 160 ' runs through opening 166 with multiple.Change speech
It, the first type semiconductor layer 110, luminescent layer 120, the second type semiconductor layer 130 and Bragg reflection structure 160 ' are in this reality
Applying is the first surface 171 for being sequentially stacked in growth substrate 170 in example.Also, second electrode 150 inserts these through opening
166 to be electrically connected the second type semiconductor layer 130.
Specifically, in the present embodiment, light emitting diode 100 ' further includes a conductive layer 101 and multiple insulating patterns
103, wherein insulating pattern 103 can be also not connected with each other.Conductive layer 101 is configured in Bragg reflection structure 160 ' and second
Between type semiconductor layer 130, and inserting these can be with contact conductive layer 101 and by leading through the second electrode 150 of opening 166
Electric layer 101 is electrically connected at the second type semiconductor layer 130.The material of conductive layer 101 is, for example, tin indium oxide (indium tin
Oxide, ITO) or other with current dissipation effect and allow the material that passes through of light.
On the other hand, the configuration of these insulating patterns 103 is between conductive layer 101 and the second type semiconductor layer 130, and portion
The corresponding configuration of insulating pattern 103 is divided to make conductive layer 101 except the area of insulating pattern 103 through opening 166 at these
It is contacted with the second type semiconductor layer 130.Furthermore, it is understood that the material of these insulating patterns 103 is, for example, silica
(silicon dioxide,SiO2) or other materials with current blocking effect.Conductive layer 101 and insulating pattern 103
It is arranged to keep the electric current being transmitted in luminescent layer 130 evenly dispersed, can avoid current convergence in certain portions of luminescent layer 120
Position, this is distributed the light emitting region of luminescent layer 120 more uniformly.Therefore, above-mentioned configuration is so that light emitting diode 100 '
Luminescence Uniformity it is preferable.
In the present embodiment, since light emitting diode 100 ' is for crystal-coated light-emitting diodes, in second electrode 150
On an insulating layer 105 and an electronic pads 107 can be further configured.Insulating layer 105 has one to run through opening O1, and electronic pads
107 filling are through opening O1 so that electronic pads 107 are electrically connected second electrode 150.In order to during chip bonding with outside
Electrical property of substrate connection and physical connection, the material of electronic pads 107 and first electrode 140 is, for example, that golden (Au), gold/tin close
Golden (Au/Sn) or other can be applied to the conductive material of eutectic bonding.Here, first electrode 140 is used directly for altogether
Crystalline substance engagement, but invention is not limited thereto.In other examples, first electrode 140 can be by phase with second electrode 150
Same material is constituted, and the electronic pads to eutectic bonding can be additionally provided with above first electrode 140.
In the present embodiment, the specific design of Bragg reflection structure 160 ' can be identical to previous embodiment with material
Bragg reflection structure 160.Therefore, Bragg reflection structure 160 ' has good performance in the reflectivity of short wavelength range,
And light emitting diode 100 ' is similarly also appropriate to and is applied in the light emitting device for needing to issue short wavelength range.
Fig. 3 is shown as the sectional view of the light emitting diode of another embodiment of the present invention.Referring to figure 3., illustrated in fig. 3
It is another light emitting diode that can be applied to flip-chip type package.The light emitting diode 200 ' of the present embodiment is similar to Fig. 2's
Light emitting diode 100 ', main difference are, for example, to be: Bragg reflection structure 260 ' is located at second electrode 150 and second
Between type semiconductor layer 130, and Bragg reflection structure 260 ' has positioned at second electrode 150 and the second type semiconductor layer 130
Between it is multiple through opening 166 and between first electrode 140 and the first type semiconductor layer 110 it is multiple through opening
167.In other words, the first type semiconductor layer 110, luminescent layer 120, the second type semiconductor layer 130 and Bragg reflection structure
260 ' be the first surface 171 for being sequentially stacked in growth substrate 170 in the present embodiment.Also, second electrode 150 inserts these
These are inserted through opening 167 with electricity through opening 166 to be electrically connected the second type semiconductor layer 130 and first electrode 140
Property connection the first type semiconductor layer 110.Though only showing one in Fig. 3 through opening 167, in the specific implementation, through opening
167 quantity can be adjusted according to actual design.
Specifically, in the present embodiment, light emitting diode 200 ' further includes a conductive layer 101 and multiple insulating patterns
103, wherein insulating pattern 103 can be not connected with each other.Conductive layer 101 is configured in Bragg reflection structure 260 ' and second type
Between semiconductor layer 130, and insert these through opening 166 second electrode 150 can pass through conduction with contact conductive layer 101
Layer 101 is electrically connected at the second type semiconductor layer 130.The material of conductive layer 101 is, for example, tin indium oxide (indium tin
Oxide, ITO) or other with current dissipation effect and allow the material that passes through of light.
On the other hand, the configuration of these insulating patterns 103 is between conductive layer 101 and the second type semiconductor layer 130, and portion
The corresponding configuration of insulating pattern 103 is divided to make conductive layer 101 in insulating pattern 103 through 166 positions of opening at these
The second type semiconductor layer 130 is contacted with except area.Furthermore, it is understood that the material of these insulating patterns 103 is, for example, titanium dioxide
Silicon (silicon dioxide, SiO2) or other materials with current blocking effect.Conductive layer 101 and insulating pattern 103
Setting keeping the electric current being transmitted in luminescent layer 130 evenly dispersed, can avoid current convergence in certain portions of luminescent layer 120
Position, this is distributed the light emitting region of luminescent layer 120 more uniformly.Therefore, above-mentioned configuration is so that light emitting diode 200 '
Luminescence Uniformity it is preferable.
In addition, in the present embodiment, light emitting diode 200 ' further includes being located at first electrode 140 and the first type semiconductor layer
An at least the first metal layer 180 between 110 and between second electrode 150 and the second type semiconductor layer 130 at least
One second metal layer 190, and part Bragg reflection structure 260 ' is located in the first metal layer 180 or second metal layer 190.It changes
Yan Zhi, the first type semiconductor layer 110, luminescent layer 120, the second type semiconductor layer 130 and Bragg reflection structure 260 ' are at this
It is the first surface 171 for being sequentially stacked in growth substrate 170 in embodiment.Also, first electrode 140 inserts these through opening
167, and the first type semiconductor layer 110 is electrically connected by the first metal layer 180；Second electrode 150 inserts these through opening
166, and the second type semiconductor layer 130 is electrically connected by second metal layer 190.
In the present embodiment, on the other hand, light emitting diode 200 ' further includes one first insulating layer 105a and one second
Insulating layer 105b.First insulating layer 105a configures in the first type semiconductor layer 110, in the second type semiconductor layer 130 and the
On the side wall of one type semiconductor layer 110, luminescent layer 120 and the second type semiconductor layer 130, and the first insulating layer 105a can also configure
On part the first metal layer 180, in part second metal layer 190 and on conductive layer 101, wherein at least part Prague is anti-
Structure 260 ' is penetrated between the first insulating layer 105a and second insulating layer 105b.Furthermore second insulating layer 105b is configurable
In Bragg reflection structure 260 '.In other words, the first type semiconductor layer 110, luminescent layer 120, the second type semiconductor layer 130 with
And Bragg reflection structure 260 ' is the first surface 171 for being sequentially stacked in growth substrate 170 in the present embodiment, also, this
It is a little to run through second insulating layer 105b, Bragg reflection structure 260 ' and the first insulating layer 105a through opening 166 for second
Electrode 150 inserts these through opening 166 and is electrically connected second metal layer 190 and the second type semiconductor layer 130.Similarly,
These are through opening 167 through second insulating layer 105b, Bragg reflection structure 260 ' and the first insulating layer 105a for the
One electrode 140 inserts these through opening 167 and is electrically connected the first metal layer 180 and the first type semiconductor layer 110.First absolutely
The material of edge layer 105a and second insulating layer 105b is, for example, silica (silicon dioxide, SiO2) or its material can
For an identical material or identical refractive material.In addition, the material of the first insulating layer 105a and second insulating layer 105b also may include
The material that Bragg reflection structure 260 ' is included.
In the present embodiment, in order to be connect during chip bonding with external electrical property of substrate and physical connection, the
The one electrode 140 and material of second electrode 150 is, for example, gold/tin alloy (Au/Sn) or other can be applied to eutectic bonding
Conductive material.Here, first electrode 140 and second electrode 150 are used directly for eutectic bonding, but the present invention is not with this
It is limited.In other examples, first electrode 140 can be made of with second electrode 150 identical material.
Fig. 4 is shown as the sectional view of the light emitting diode of one more embodiment of the present invention.Referring to figure 4., it is shown by Fig. 4
Another can be applied to the light emitting diode of flip-chip type package.The light emitting diode 300 ' of the present embodiment is similar to the hair of Fig. 3
Optical diode 200 ', main difference be, for example, be: light emitting diode 300 ' further include one first insulating layer 105a and
One second insulating layer 105b and Bragg reflection structure 360 ' configuration between the first insulating layer 105a and second insulating layer 105b,
Wherein the first insulating layer 105a and second insulating layer 105b can partly overlap and contacting one another.First insulating layer 105a configuration
In the first type semiconductor layer 110, in the second type semiconductor layer 130 and the first type semiconductor layer 110, luminescent layer 120 and
On the side wall of two type semiconductor layers 130, and the first insulating layer 105a may also be disposed on part the first metal layer 180, part
On two metal layers 190 and on conductive layer 101, wherein Bragg reflection structure 360 ' is located at the first insulating layer 105a and 1
Between two insulating layer 105b.Furthermore second insulating layer 105b is configurable in Bragg reflection structure 360 ', the first insulating layer
105a is upper, on part the first metal layer 180 and in part second metal layer 190, and wherein second insulating layer 105b can also be coated
Bragg reflection structure 360 '.In other words, the first type semiconductor layer 110, luminescent layer 120, the second type semiconductor layer 130 and cloth
Glug catoptric arrangement 360 ' is the first surface 171 for being sequentially stacked in growth substrate 170 in the present embodiment.Also, these are passed through
Opening 166 is worn through second insulating layer 105b and the first insulating layer 105a so that second electrode 150 inserts these through opening
166 and it is electrically connected second metal layer 190 and the second type semiconductor layer 130.Similarly, these run through second through opening 167
Insulating layer 105b and the first insulating layer 105a is so that first electrode 140 inserts these through opening 167 and is electrically connected first
Metal layer 180 and the first type semiconductor layer 110.The material of first insulating layer 105a and second insulating layer 105b is, for example, titanium dioxide
Silicon (silicon dioxide, SiO2) or its material can be an identical material or identical refractive material.In addition, the first insulating layer
The material of 105a or second insulating layer 105b also may include the material that Bragg reflection structure 360 ' is included.
Fig. 5 is shown as the sectional view of the light emitting diode of another embodiment of the present invention.Referring to figure 5., it is shown by Fig. 5
Another can be applied to the light emitting diode of flip-chip type package.The light emitting diode 400 ' of the present embodiment is similar to the hair of Fig. 4
Luminous diode chip 300 ', main difference are, for example, to be: the first metal layer 180 includes a weldering portion 180a and a finger portion
180b, and second metal layer 190 includes an a weldering portion 190a and finger portion 190b, wherein the first insulating layer 105a and one second
Insulating layer 105b can partly overlap and be in contact with each other.First insulating layer 105a is configured in the first type semiconductor layer 110, second
In type semiconductor layer 130 and on the side wall of the first type semiconductor layer 110, luminescent layer 120 and the second type semiconductor layer 130.Separately
Outside, the first insulating layer 105a configuration is on part the first metal layer 180, in part second metal layer 190 and conductive layer 101
On, and the first insulating layer 105 configures on the weldering portion 180a of part the first metal layer 180 and the finger portion of the first metal layer 180
On 180b.Part Bragg reflection structure 360 ' is between the first insulating layer 105a and a second insulating layer 105b.Furthermore
Second insulating layer 105b is configurable in Bragg reflection structure 360 ', on the first insulating layer 105a, part the first metal layer 180
In upper and part second metal layer 190, wherein second insulating layer 105b can also coat Bragg reflection structure 360 ' and second
Insulating layer 105b is configured on the weldering portion 180a of part the first metal layer 180 and on the finger portion 180b of the first metal layer 180.It changes
Yan Zhi, the first type semiconductor layer 110, luminescent layer 120, the second type semiconductor layer 130 and Bragg reflection structure 360 ' are at this
It is sequentially to be stacked in the first surface 171 of growth substrate 170, also, these insulate through opening 166 through second in embodiment
Layer 105b and the first insulating layer 105a is so that second electrode 150 inserts these through opening 166 and is electrically connected the second metal
The weldering portion 190a and the second type semiconductor layer 130 of layer 190.These run through second insulating layer 105b and first through opening 167
Insulating layer 105a is so that first electrode 140 inserts these through opening 167 and is electrically connected the weldering portion 180a of the first metal layer 180
And first type semiconductor layer 110.The material of first insulating layer 105a and second insulating layer 105b is, for example, silica
(silicon dioxide,SiO2) or its material can be an identical material or identical refractive material.In addition, the first insulating layer
The material of 105a or second insulating layer 105b also may include the material that Bragg reflection structure 360 ' is included.
Fig. 6 is the diagrammatic cross-section of the metal layer of one embodiment of the invention.Fig. 6 is please referred to, metal layer M has top surface
MT, bottom surface MB and side surface MS, wherein side surface MS and bottom surface MB constitute an angle theta, and angle theta can less than 60 degree,
Or less than 45 degree.For example, angle theta can be 30 degree to 45 degree.Metal layer M can be applied to the first of previous embodiment
Metal layer 180 and second metal layer 190 are at least one.
Specifically, when metal layer M is applied to the first metal layer 180 of Fig. 3, the area through opening 167 be can be set
To fall on the area of top surface MT, and side surface MS can be covered at least partially by the first insulating layer 105a.At this point, because
The angle theta that side surface MS and bottom surface MB is constituted can be less than 60 degree, and the first insulating layer 105a can certainly be covered on side table
On the MS of face.In other words, batch covering for the first insulating layer 105a covering part metal layer M works well.Similarly, metal layer M is applied
Second metal layer 190 in Fig. 3 or the first metal layer 180 applied to Fig. 4 to Fig. 5 and second metal layer 190 at least one
When also can provide similar effect.
Fig. 7 is the upper schematic diagram of the light emitting diode of one embodiment of the invention.Fig. 8 is cuing open for the line A-B corresponding to Fig. 7
Face schematic diagram.Fig. 9 is the diagrammatic cross-section of the line B-C corresponding to Fig. 7.The section signal that Figure 10 is the line C-D corresponding to Fig. 7
Figure.Figure 11 is the diagrammatic cross-section of the line E-F corresponding to Fig. 7.Figure 12 is the diagrammatic cross-section of the line G-H corresponding to Fig. 7.At this
In embodiment, light emitting diode 500 generally includes conductive layer 101, insulating pattern 103, the first type semiconductor layer 110, shines
Layer the 120, second type semiconductor layer 130, first electrode 140, second electrode 150, Bragg reflection structure 560 ', growth substrate
170, the first metal layer 180 and second metal layer 190.Some is not shown out these components in Fig. 7, but is presented in
In sectional view corresponding to line A-B, B-C, C-D, E-F or G-H.
As shown in Figure 7, the first electrode 140 and second electrode 150 of light emitting diode 500 are positioned opposite to each other, and each other
Separation.First electrode 140 is substantially rectangular and first electrode 140 is in the side S140 towards second electrode 150 has multiple lack
Mouth N140.Notch N140 is from side S140 to 140 internal stretch of first electrode, but not through first electrode 140.Second electrode
150 be substantially also rectangle, and second electrode 150 has multiple notch N150 in the side S150 towards first electrode 140.Notch
N150 is from side S150 to 150 internal stretch of second electrode, but not through second electrode 150.First electrode 140 and second electrode
150 material be, for example, golden (Au), gold/tin alloy (Au/Sn) or other can be applied to the conductive material of eutectic bonding.?
In other embodiments, first electrode 140 can be made of with second electrode 150 identical material, and first electrode 140 with
The electronic pads to eutectic bonding can be additionally provided with above second electrode 150.
In the present embodiment, the weldering portion 180a of the first metal layer 180 is overlapped in first electrode 140, and the first metal layer 180
Finger portion 180b by weldering portion 180a towards second electrode 190 extend and specifically extend to second electrode 150 notch N150 in.
As shown in Figure 7, refer to that portion 180b is not overlapped on layout area each other with second electrode 150.The weldering portion of second metal layer 190
190a is overlapped in second electrode 150, and the finger portion 190b of second metal layer 190 is extended by weldering portion 190a towards first electrode 180
And it specifically extends in the notch N140 of first electrode 140.
As shown in Figure 7, refer to that portion 190b is not overlapped on layout area each other with first electrode 140.The wheel of conductive layer 101
Exterior feature is around the first metal layer 180 without Chong Die with the first metal layer 180.Insulating pattern 103 then corresponds to second metal layer 190 and sets
It sets, and the profile of insulating pattern 103 is substantially similar with the profile of second metal layer 190.In addition, Bragg reflection structure 560 '
Profile then accordingly exposes the weldering portion 180a of the first metal layer 180 and the weldering portion 190a of second metal layer 190.That is,
The weldering portion 180a of the first metal layer 180 and the weldering portion 190a of second metal layer 190 be not Chong Die with Bragg reflection structure 560 ', this
For the first metal layer 180 weldering portion 180a physically with first electrode 140 and for the weldering of second metal layer 190 is connected in electrical property
Portion 190a physically in electrical property connect second electrode 150.But, the finger portion 180b and second metal layer of the first metal layer 180
190 finger portion 190b can be Chong Die with Bragg reflection structure 560 '.
By Fig. 7 and Fig. 8 it is found that in light emitting diode 500, the first type semiconductor layer 110, luminescent layer 120, second type are partly led
Body layer 130, conductive layer 101, Bragg reflection structure 560 ' and second electrode 150 are sequentially stacked in growth substrate 170.First
In the stacked structure of type semiconductor layer 110, luminescent layer 120 and the second type semiconductor layer 130, luminescent layer 120 is partly led with second type
Body layer 130 can be locally removed and conductive layer 101 also accordingly disconnects in this region and the first type semiconductor layer 110 is revealed
Out.The first metal layer 180 then configures in the first type semiconductor layer 110 of exposing.Shown the first metal layer in fig. 8
180 be finger portion 180b, and the portion 180b of finger correspond to status in the notch N150 of second electrode 150 because without with second electrode
150 overlappings.In addition, Bragg reflection structure 560 ' overlaps finger portion 180b.
By Fig. 7 and Fig. 9 it is found that between the side S140 of first electrode 140 and the side S150 of second electrode 150, the
One type semiconductor layer 110, luminescent layer 120, the second type semiconductor layer 130, conductive layer 101 all connect with Bragg reflection structure 560 '
It is distributed continuously, and these components are sequentially stacked in growth substrate 170.
By Fig. 7 and Figure 10 it is found that first electrode 140 notch N140, the first type semiconductor layer 110, luminescent layer
120, the second type semiconductor layer 130, insulating pattern 103, conductive layer 101, second metal layer 190 and Bragg reflection structure 560 '
It is sequentially stacked in growth substrate 170.The profile of insulating pattern 103 corresponds to the profile of second metal layer 190 and the two each other
Overlapping.Specifically, the second metal layer 190 in Figure 10 is the finger portion 190b of second metal layer 190, and refers to that portion 190b is corresponding
Status is in the notch N140 of first electrode 140 because without Chong Die with first electrode 140.In addition, Bragg reflection structure 560 '
Overlap finger portion 190b.
By Fig. 7 and Figure 11 it is found that in light emitting diode 500, the first type semiconductor layer 110, luminescent layer 120, second type half
Conductor layer 130, conductive layer 101, Bragg reflection structure 560 ' and second electrode 150 are sequentially stacked in growth substrate 170.The
In the stacked structure of one type semiconductor layer 110, luminescent layer 120 and the second type semiconductor layer 130, luminescent layer 120 and second type half
Conductor layer 130 can be locally removed and conductive layer 101 also accordingly disconnects in this region with Bragg reflection structure 560 ' and made
The first type semiconductor layer 110 is obtained to expose.The first metal layer 180 then configures in the first type semiconductor layer 110 of exposing, and first
The disconnection that electrode 140 inserts conductive layer 101 and Bragg reflection structure 560 ' go out and physically with the first metal is connected in electrical property
Layer 180.The weldering portion 180a of the first metal layer 180 is showed in Figure 11.Therefore, by Fig. 8 and Figure 11 it is found that the first metal layer
180 weldering portion 180a is directly contacted and is electrically connected first electrode, and the finger portion 180b of the first metal layer 180 then overlaps Bradley
Lattice catoptric arrangement 560 ' and not any electrode overlapping.
By Fig. 7 and Figure 12 it is found that in 150 place area of second electrode, the first type semiconductor layer 110, luminescent layer 120,
Second type semiconductor layer 130, insulating pattern 103, conductive layer 101, second metal layer 190 and Bragg reflection structure 560 ' are sequentially
It is stacked in growth substrate 170.The profile of insulating pattern 103 corresponds to the profile of second metal layer 190 and the two overlaps each other.
Specifically, in Figure 12, the weldering portion 190a of second metal layer 190 overlaps second electrode 150 and Bragg reflection structure
560 ' corresponding to weldering portion 190a region disconnect so that the weldering portion 190a of second metal layer 190 physically with connected in electrical property
Second electrode 150.That is, the weldering portion 190a of second metal layer 190 is not Chong Die with Bragg reflection structure 560 '.Mutually compared with
Under, in Figure 10, the finger portion 190b of second metal layer 190 then can be Chong Die with Bragg reflection structure 560 ', but the second metal
The finger portion 190b of layer 190 does not overlap any electrode.
By Fig. 7 to Figure 12 it is found that all including overlapping Bragg reflection in the first metal layer 180 and second metal layer 190
A part of structure 560 ' and underlapped another part in Bragg reflection structure 560 '.Overlap Bragg reflection structure
560 ' partial metal layers (180 or 190) will not all overlap electrode.In this way, which light emitting diode 500 can have more
Uniform thickness, and help to improve yield when light emitting diode 500 to be bonded to other components.In addition, in Fig. 7 to Figure 12
In, the two sides up and down of Bragg reflection structure 560 ' can be additionally provided with such as the first insulating layer 105a and second in Fig. 4 or 5
Insulating layer 105b, without being limited to Bragg reflection structure 560 ' directly contact conductive layer 101, the 140, second electricity of first electrode
Pole 150, the first metal layer 180 (referring to portion 180b) and second metal layer 190 (referring to portion 190b).In addition, the first metal layer 180 and
The cross-section structure of two metal layers 190 can have inclined side wall MS as shown in Figure 6.
Figure 13 is the diagrammatic cross-section of the Bragg reflection structure of one embodiment of the invention.Figure 13 is please referred to, Prague is anti-
Structure DBR1 is penetrated to be arranged between the first insulating layer I1 and second insulating layer I2.Bragg reflection structure DBR1 includes multiple first
Refracting layer 12 and multiple second refracting layers 14, and first refractive layer 12 is alternately stacked with these second refracting layers 14.Each first
Refractive index of the refractive index of refracting layer 12 different from each second refracting layer 14.In the present embodiment, closer second insulating layer I2, the
The thickness of one refracting layer 12 and the second refracting layer 14 is smaller.That is, first refractive layer 12 stacked with the second refracting layer 14 it is close
It is closeer that degree is rendered as closer second insulating layer I2, and closer first insulating layer I1 is thinner.In this way, Bragg reflection knot
Structure DBR1 is refracting layer density from the first insulating layer I1 to the increased structure of second insulating layer I2 gradual change.
The material of the first refractive layer 12 of the present embodiment includes tantalum pentoxide (Ta2O5), zirconium dioxide (ZrO2), five oxygen
Change two niobium (Nb2O5), hafnium oxide (HfO2), titanium dioxide (TiO2) or above-mentioned combination.On the other hand, second refracting layer 14
Material includes silica (SiO2).In the present embodiment, the material of the first insulating layer I1 and second insulating layer I2 may be
Silica, but when the material of the second refracting layer 14, the first insulating layer I1 and second insulating layer I2 is all silica, second
The crystallinity and compactness of refracting layer 14 are compared to less than the first insulating layer I1 and second insulating layer I2.First refractive layer 12 and
The material and thickness of two refracting layers 14 can adjust the reflected wavelength range of Bragg reflection structure DBR1.Therefore, this reality
The Bragg reflection structure DBR1 of example is applied using the first refractive layer 12 and the second refracting layer 14 of change of gradient on thickness, can allow cloth
Glug catoptric arrangement DBR1 has wider reflected wavelength range and suitable applications in the illumination effect for needing wide wave-length coverage
In end product.
For example, with titanium dioxide (TiO2) make first refractive layer 12 and silica (SiO2) the second refraction of production
Layer 14, then the Bragg reflection structure DBR1 that change of gradient is presented in the thickness of refracting layer can be applied in visible light light emitting device.
With tantalum pentoxide (Ta2O5) make first refractive layer 12 and silica (SiO2) second refracting layer 14 of production, then refracting layer
The Bragg reflection structure DBR1 that change of gradient is presented in thickness can be applied in UV-light luminous device.But, above-mentioned material with
The application mode of light emitting device is for illustration only, and actually Bragg reflection structure DBR1 is made of other materials
When, application mode can be adjusted according to the reflected wavelength range of its presentation.
Figure 14 is the diagrammatic cross-section of the Bragg reflection structure of another embodiment of the present invention.Please refer to Figure 14, Prague
Catoptric arrangement DBR2 is arranged between the first insulating layer I1 and second insulating layer I2.Bragg reflection structure DBR1 includes multiple
One refracting layer 22 and multiple second refracting layers 24, and first refractive layer 22 is alternately stacked with the second refracting layer 24.Each first folding
Penetrate refractive index of the refractive index different from each second refracting layer 24 of layer 22.In the present embodiment, closer second insulating layer I2, first
Refracting layer 22 and the thickness of the second refracting layer 24 are bigger.That is, first refractive layer 22 and the second refracting layer 24 stack density
It is thinner to be rendered as closer second insulating layer I2, and it is closeer closer to the first insulating layer I1.In this way, Bragg reflection structure
DBR2 is refracting layer density from the first insulating layer I1 to the structure of second insulating layer I2 gradual change reduction.
The material and thickness of first refractive layer 22 and the second refracting layer 24 can adjust Bragg reflection structure DBR2
Reflected wavelength range.The material of first refractive layer 22 includes tantalum pentoxide (Ta2O5), zirconium dioxide (ZrO2), five oxidation two
Niobium (Nb2O5), hafnium oxide (HfO2), titanium dioxide (TiO2) or above-mentioned combination.On the other hand, the material of the second refracting layer 24
Including silica (SiO2)。
Figure 15 is the diagrammatic cross-section of the Bragg reflection structure of yet another embodiment of the invention.Please refer to Figure 15, Prague
Catoptric arrangement DBR3 includes main stack layer B1, B2, transition stack layer C1 and repairing stack layer D1, D2.Main stack layer B1 is by
Second refracting layer B14 of the one refracting layer B12 with refractive index different from first refractive layer B12 is alternately and repeatedly stacked.Main stacking
Layer B2 be alternately and repeatedly stacked by first refractive layer B22 and refractive index different from the second refracting layer B24 of first refractive layer B22 and
At.Transition stack layer C1 is anti-different from the fourth reflect layer C14 of third reflect layer C12 with refractive index by third reflect layer C12
Complex Alternating stacks.Repairing stack layer D1 is to be different from the 6th of the 5th refracting layer D12 by the 5th refracting layer D12 and refractive index
Refracting layer D14 is alternately and repeatedly stacked.Repairing stack layer D2 is to be different from the 5th refraction by the 5th refracting layer D22 and refractive index
The 6th refracting layer D24 of layer D22 is alternately and repeatedly stacked.
In the present embodiment, the first refractive layer B12 in the same Bragg reflection structure DBR3 and B22, third are rolled over
Penetrating layer C12 and the 5th refracting layer D12 and D22 and can be identical material may be different materials, and material may include five oxidations
Two tantalum (Ta2O5), zirconium dioxide (ZrO2), niobium pentaoxide (Nb2O5), hafnium oxide (HfO2), titanium dioxide (TiO2) or it is above-mentioned
Combination.The second refracting layer B14 and B24, fourth reflect layer C14, the 6th folding in the same Bragg reflection structure DBR3
Penetrating layer D14 and D24 and can be identical material may be different materials, and material may include silica.
In addition, each first refractive layer B12 has equivalent first thickness T1 and the second refracting layer in main stack layer B1
B14 has equivalent first thickness T1.In main stack layer B2, each first refractive layer B22 have equivalent first thickness T2 and
Second refracting layer B24 has equivalent first thickness T2.Also, first thickness T1 is different from second thickness T2.That is, single
One main stack layer B1 or B2 is the refracting layer with equal periods stacking, but the refracting layer of different main stack layers stacks the period not
Together.In this way, be stacked by several main stack layer B1, B2, Bragg reflection structure DBR3 can provide wide anti-
Penetrate long range.
In transition stack layer C1 between main stack layer B1 and main stack layer B2, third reflect layer C12 and fourth reflect layer
C14 has third thickness T3.Third thickness T3 can be the average value of first thickness T1 Yu second thickness T2.In other words, T3=
1/2(T1+T2).But, the thickness of third reflect layer C12 and fourth reflect layer C14 can also be respectively interposed in first thickness T1 with
Between second thickness T2.
In addition, the thickness of the 5th refracting layer D12 and the 6th refracting layer D14 can be closer to main heap in repairing stack layer D1
Lamination B1 is closer to first thickness T1.The thickness of the 5th refracting layer D22 and the 6th refracting layer D24 can be in repairing stack layer D2
Closer to main stack layer B2 then closer to second thickness T2.That is, repairing stack layer D1 and repairing stack layer D2 are refractions
The stacked structure of layer gradient thickness.Also, the composition material for repairing stack layer D1 can be relevant to main stack layer B1 and repair stacking
The composition material of layer D2 can be relevant to main stack layer B2.
Figure 16 is the diagrammatic cross-section of the Bragg reflection structure of further embodiment of this invention.Please refer to Figure 16, Prague
Catoptric arrangement DBR4 is similar to Bragg reflection structure DBR3 above-mentioned, but Bragg reflection structure DBR4 further includes repairing heap
Lamination D3 and repairing stack layer D4.Repairing stack layer D3 is located between transition stack layer C1 and main stack layer B1, and repairs and stack
Layer D4 is located between transition stack layer C1 and main stack layer B2.The thickness of refracting layer can be closer to master in repairing stack layer D3
Stack layer B1 is closer to first thickness T1.The thickness of refracting layer can be in repairing stack layer D4 then gets over closer to main stack layer B2
Close to second thickness T2.Also, the composition material for repairing stack layer D3 can be relevant to main stack layer B1 and repair stack layer D4's
Composition material can be relevant to main stack layer B2.
Bragg reflection structure DBR1~DBR4 of Figure 13 to Figure 16 can be applied to luminous two in Fig. 1,2,3,4,5,7
In any one of pole pipe.That is, any one Bragg reflection structure documented by previous embodiment can use
Any one of Bragg reflection structure DBR1~DBR4 of Figure 13 to Figure 16 is realized.There is refracting layer in Bragg reflection structure
Under the structure that the stacked structure of gradient thickness or refracting layer with several different-thickness stack, Bragg reflection structure can be with
Wider reflected wavelength range is provided.
Figure 17 is the diagrammatic cross-section of the light emitting diode of one embodiment of the invention.The light emitting diode 100A and figure of Figure 17
2 light emitting diode 100 is similar therefore identical or corresponding component is indicated with identical or corresponding label.Light-emitting diodes
Pipe 100A and the difference of light emitting diode 100 are: the insulating pattern 103A of light emitting diode 100A and light emitting diode 100
Insulating pattern 103 is different.Below mainly with regard to explaining at this difference, the two is identical or corresponding section, also please according to the mark in Figure 17
Number referring to preceding description, just no longer repeat herein.
Please refer to Figure 17, light emitting diode 100A include growth substrate 170, the first type semiconductor layer 110, luminescent layer 120,
Second type semiconductor layer 130, first electrode 140, second electrode 150, Bragg reflection structure 160 ', multiple insulating patterns
103A, conductive layer 101, insulating layer 105 and electronic pads 107.Luminescent layer 120 is located at the first type semiconductor layer 110 and second type
Between semiconductor layer 130.First electrode 140 is electrically connected the first type semiconductor layer 110.Second electrode 150 is electrically connected second
Type semiconductor layer 130.First electrode 140 is all located at phase the same side of Bragg reflection structure 160 ' with second electrode 150.Bradley
Lattice catoptric arrangement 160 ' is located between second electrode 150 and the second type semiconductor layer 130.The configuration of conductive layer 101 is anti-in Prague
It penetrates between structure 160 ' and the second type semiconductor layer 130.Insulating pattern 103A configuration is partly led in conductive layer 101 and second type
Between body layer 130.Conductive layer 101 is contacted with the second type semiconductor layer 130 except the area of insulating pattern 103A.Insulating layer
105 have one to run through opening O1, and the filling of electronic pads 107 runs through opening O1 so that the electric connection second electrode of electronic pads 107
150。
Specifically, Bragg reflection structure 160 ' has through opening 166.In the present embodiment, the first type semiconductor
Layer 110, luminescent layer 120, the second type semiconductor layer 130 and Bragg reflection structure 160 ' can sequentially be stacked in growth substrate
170 first surface 171.The filling of second electrode 150 is electrically connected the second type semiconductor layer 130 through opening 166.It fills out
The second electrode 150 for entering to run through opening 166 can be with contact conductive layer 101, and then is electrically connected at second type by conductive layer 101
Semiconductor layer 130.
Figure 17 is please referred to, unlike light-emitting diode chip for backlight unit 100, insulating pattern 103A has partly to be led towards second type
The first surface 103f of body layer 130 and backwards the second surface 103g of the second type semiconductor layer 130.In particular, insulating pattern
103A has more the inclined-plane 103h being connected between first surface 103f and second surface 103g.Inclined-plane 103h is relative to the first table
Face 103f and second surface 103g is tilted.Insulating pattern 103A has current blocking effect.Conductive layer 101 and insulating pattern 103A
Setting can be used to scattered current, to avoid current convergence in certain positions of luminescent layer 120, and then make the hair of luminescent layer 120
Light region is uniformly distributed.
Furthermore, as shown in figure 17, first surface 103f contacted with the second type semiconductor layer 130 without with conduction
Layer 101 contacts, and second surface 103g and inclined-plane 103h are contacted with conductive layer 101 without contacting with the second type semiconductor layer 130.The
Frontal projected area of the one surface 103f in the second type semiconductor layer 130 is greater than second surface 103g in the second type semiconductor layer
Frontal projected area on 130, and inclined-plane 103h is connected to the area edge of first surface 103f and the area of second surface 103g
Between edge.Inclined-plane 103h and first surface 103f accompany an acute angle theta in the material of insulating pattern 103A1.In the present embodiment
In, 10 °≤θ1≦80°；It is preferred that 30 °≤θ1≤ 50 °, but invention is not limited thereto.
Figure 18 A is the insulating pattern of one embodiment of the invention and the enlarged diagram of conductive layer.Figure 18 B is the exhausted of comparative example
The enlarged diagram of edge pattern and conductive layer.Figure 18 A and Figure 18 B are please referred to, in the comparative example of Figure 18 B, insulating pattern 103A '
Side wall 103d and bottom surface 103e accompany angle, θ1', and θ1'≧90°.In θ1In the case where '≤90 °, when conductive layer 101 covers
When insulating pattern 103A ', conductive layer 101 is easy to produce that drape is bad to ask near the side wall 103d of insulating pattern 103A '
Topic, it may occur however that disconnect can not continuously be coated on side wall 103d so that influence the electrical property of light-emitting diode chip for backlight unit, optical characteristics and
Reliability.In comparison, 8A referring to Fig.1, in the present embodiment, insulating pattern 103A have inclined-plane 103h.Inclined-plane 103h and
One surface 103f accompanies an acute angle theta in the material of insulating pattern 103A1.In θ1In the case where less than 90 °, when conductive layer 101 covers
When lid insulating pattern 103A, drape of the conductive layer 101 near inclined-plane 103h is good, and then is able to ascend light-emitting diode chip for backlight unit
Electrical property, optical characteristics and the reliability of 100A.For example, when drape of the conductive layer 101 near inclined-plane 103h is good, hair
The driving voltage of luminous diode chip 100A can reduce, the uniformity of current density, brightness can be promoted, heat concentrates on specific region
The problem of can improve.In addition, being more conducive to the film layer being subsequently formed on conductive layer 101 when the drape of conductive layer 101 is good
Processing procedure nargin (process window)
Figure 19 A is the schematic diagram of the insulating pattern of one embodiment of the invention.Figure 19 A is please referred to, insulating pattern 103A1 includes
Multiple first sublayer SL1 and multiple second sublayer SL2.First sublayer SL1 is alternately stacked with the second sublayer SL2.First sublayer SL1
Material and the material of the second sublayer SL2 can be different.The material of each first sublayer SL1 includes tantalum pentoxide (Ta2O5), dioxy
Change zirconium (ZrO2), niobium pentaoxide (Nb2O5), hafnium oxide (HfO2), titanium dioxide (TiO2) or above-mentioned combination.Each second son
The material of layer SL2 includes silica (SiO2) combination.
When making insulating pattern 103A1 using the first and second different sublayer SL1, SL2 of material, for example, may be selected
Property using strip processing procedure (lift-off process) formed have inclined-plane 103h insulating pattern 103A1.In the present embodiment
In, the refractive index of the refractive index of the first sublayer SL1 different from the second sublayer SL2.In this way, which insulating pattern 103A1 can be provided
Bragg reflection effect.Insulating pattern 103A1 is applied in the light emitting diode 100A of Figure 17, there is Bragg reflection effect
Insulating pattern 103A1 it can will be reflexed to by the light beam of 120 directive second electrode 150 of luminescent layer, and then make luminescent layer 120
The light beam of sending be not easy to be stopped by the second electrode 150 of shading and from it light out, to promote light-emitting diode chip for backlight unit 100A's
Brightness.
In other embodiments, as shown in Figure 19 B, Figure 19 B is the schematic diagram of the insulating pattern of another embodiment of the present invention.
The material of the first and second sublayer SL3, SL4 of insulating pattern 103A2 can be to be identical, and the density (density) of the first sublayer SL3
Density with the second sublayer SL4 can be different.The material of insulating pattern 103A2 be, for example, silica (silicon dioxide,
SiO2) or other materials with current blocking effect.
The first and second sublayer SL3, SL4 that material is identical but density is different, can by regulation process parameter (such as: temperature,
Pressure, time etc.) form desired density.When using material is identical and the first and second sublayer SL3, SL4 that density is different makes
When insulating pattern 103A2, insulating pattern 103A2 is dissolved using etch process (etching process) pattern.Due to
One, the density of two sublayers SL3, SL4 is different, therefore when etching the first and second sublayer SL3, SL4 simultaneously, the higher sublayer of density
(SL3) area left by can be larger, and area left by the lower sublayer of density (SL4) can be smaller, and then schemes insulation
Case 103A2 forms the structure with inclined-plane 103h.
Figure 20 is the diagrammatic cross-section of the light emitting diode of one embodiment of the invention.The light emitting diode 200A and figure of Figure 20
3 light emitting diode 200 ' is similar, therefore identical or corresponding label is indicated with identical or corresponding label.Light-emitting diodes
Pipe 200A and the difference of light emitting diode 200 ' be: the insulating pattern 103A and light emitting diode of light emitting diode 200A
200 ' insulating pattern 103 is different.Below mainly with regard to explaining at this difference, the two is identical or corresponding section, also please according to Figure 20
In label referring to preceding description, just no longer repeat herein.
Referring to figure 2. 0, light emitting diode 200A include growth substrate 170, the first type semiconductor layer 110, luminescent layer 120,
Second type semiconductor layer 130, first electrode 140, second electrode 150, Bragg reflection structure 260 ', multiple insulating patterns
103A, conductive layer 101, the first insulating layer 105a, a second insulating layer 105b, at least a first metal layer 180 and at least one
Second metal layer 190.
Luminescent layer 120 is between the first type semiconductor layer 110 and the second type semiconductor layer 130.First electrode 140 is electrically
Connect the first type semiconductor layer 110.Second electrode 150 is electrically connected the second type semiconductor layer 130.First electrode 140 and second
Electrode 150 is all located at phase the same side of Bragg reflection structure 260 '.
First insulating layer 105a is configured in the first type semiconductor layer 110, in the second type semiconductor layer 130 and the first type
On the side wall of semiconductor layer 110, luminescent layer 120 and the second type semiconductor layer 130, and the first insulating layer 105a may also be disposed in portion
Divide on the first metal layer 180, in part second metal layer 190 and on conductive layer 101, wherein at least part Bragg reflection knot
Structure 260 ' is between the first insulating layer 105a and second insulating layer 105b.The first metal layer 180 be located at first electrode 140 with
Between first type semiconductor layer 110, second metal layer 190 is located between second electrode 150 and the second type semiconductor layer 130, and
Part Bragg reflection structure 260 ' is located in the first metal layer 180 or second metal layer 190.
There is Bragg reflection structure 260 ' running through between second electrode 150 and the second type semiconductor layer 130 to open
Mouthfuls 166 and between first electrode 140 and the first type semiconductor layer 110 through opening 167.In the present embodiment,
One type semiconductor layer 110, luminescent layer 120, the second type semiconductor layer 130 and Bragg reflection structure 260 ' can be sequentially stacked in
The first surface 171 of growth substrate 170.The filling of second electrode 150 is through opening 166, to be electrically connected the second type semiconductor layer
130.The filling of first electrode 140 is through opening 167, to be electrically connected the first type semiconductor layer 110.
Unlike light-emitting diode chip for backlight unit 200 ', insulating pattern 103A has towards the second type semiconductor layer 130
First surface 103f and backwards the second surface 103g of the second type semiconductor layer 130.In particular, insulating pattern 103A also has
The inclined-plane 103h being connected between first surface 103f and second surface 103g.Inclined-plane 103h is relative to first surface 103f and
Two surface 103g inclination.Insulating pattern 103A has current blocking effect.The setting of conductive layer 101 and insulating pattern 103A are available
With scattered current, to avoid current convergence in certain positions of luminescent layer 120, and then keep the light emitting region of luminescent layer 120 uniform
Distribution.Furthermore, insulating pattern 103A can be by the way of Figure 19 A or the mode of Figure 19 B designs.
Figure 21 is the diagrammatic cross-section of the light emitting diode of one embodiment of the invention.The light emitting diode 300A and figure of Figure 21
4 light emitting diode 300 ' is similar, therefore identical or corresponding component is indicated with identical or corresponding label.Light-emitting diodes
Pipe 300A and the difference of light emitting diode 300 ' are: the insulating pattern 103A and light emitting diode 300 ' of light emitting diode 300A
Insulating pattern 103 it is different.Below mainly with regard to explaining at this difference, the two is identical or corresponding section, also please according in Figure 21
Label just no longer repeats herein referring to preceding description.
Referring to figure 2. 1, light emitting diode 300A include the first type semiconductor layer 110, luminescent layer 120, second type semiconductor
Layer 130, first electrode 140, second electrode 150 and Bragg reflection structure 360 '.Luminescent layer 120 is located at the first type semiconductor
Between layer 110 and the second type semiconductor layer 130.First electrode 140 is electrically connected the first type semiconductor layer 110.Second electrode 150
It is electrically connected the second type semiconductor layer 130.First electrode 140 and second electrode 150 are all positioned at Bragg reflection structure 360 '
Phase the same side.
In the present embodiment, light emitting diode 300A further includes insulating pattern 103A.Insulating pattern 103A is configured second
Between electrode 150 and the second type semiconductor layer 130.Light emitting diode 300A further includes the insulation of the first insulating layer 105a and second
Layer 105b.Bragg reflection structure 360 ' configures between the first insulating layer 105a and second insulating layer 105b.First insulating layer
105a can partly overlap and contacting one another with second insulating layer 105b.First insulating layer 105a is configured in the first type semiconductor layer
110 and second in type semiconductor layer 130, and covers the first type semiconductor layer 110, luminescent layer 120 and the second type semiconductor layer 130
Side wall.Second insulating layer 105b is configurable in Bragg reflection structure 360 '.Run through second insulating layer through opening 166
105b and the first insulating layer 105a.The filling of second electrode 150 is through opening 166 and is electrically connected second metal layer 190 and second
Type semiconductor layer 130.Run through second insulating layer 105b and the first insulating layer 105a through opening 167.First electrode 140 is inserted
Through opening 167 and it is electrically connected the first metal layer 180 and the first type semiconductor layer 110.
Unlike light-emitting diode chip for backlight unit 300 ', insulating pattern 103A has towards the second type semiconductor layer 130
First surface 103f and backwards the second surface 103g of the second type semiconductor layer 130.In particular, insulating pattern 103A also has
The inclined-plane 103h being connected between first surface 103f and second surface 103g.Inclined-plane 103h is relative to first surface 103f and
Two surface 103g inclination.Insulating pattern 103A has current blocking effect.The setting of conductive layer 101 and insulating pattern 103A are available
With scattered current, to avoid current convergence in certain positions of luminescent layer 120, and then keep the light emitting region of luminescent layer 120 uniform
Distribution.Furthermore, insulating pattern 103A can be by the way of Figure 19 A or the mode of Figure 19 B designs.
Figure 22 is the diagrammatic cross-section of the light emitting diode of one embodiment of the invention.The light emitting diode 400A of Figure 22 is similar
In the light-emitting diode chip for backlight unit 300A of Figure 21, therefore identical or corresponding component is indicated with identical or corresponding label.Hair
Optical diode 400A and the main difference of light-emitting diode chip for backlight unit 300A are for example following.In light emitting diode 400A, the first metal
Layer 180 includes weldering portion 180a and finger portion 180b.Second metal layer 190 includes weldering portion 190a and finger portion 190b.First insulating layer
105a and second insulating layer 105b can partly overlap and be in contact with each other.First insulating layer 105a is configured in the first type semiconductor
On layer 110 and the second type semiconductor layer 130, and cover the first type semiconductor layer 110, luminescent layer 120 and the second type semiconductor layer
130 side wall.First insulating layer 105a is configured on part the first metal layer 180, is in part second metal layer 190 and conductive
On layer 101.
Furthermore, the first insulating layer 105a configuration is on the weldering portion 180a of part the first metal layer 180 and the
On the finger portion 180b of one metal layer 180.Part Bragg reflection structure 360 ' is located at the insulation of the first insulating layer 105a and second
Between layer 105b.Second insulating layer 105b is configurable in Bragg reflection structure 360 '.Second insulating layer 105b can also be coated
Bragg reflection structure 360 '.Second insulating layer 105b configures the weldering portion 180a and the first gold medal in part the first metal layer 180
Belong to the top of the finger portion 180b of layer 180.
Run through second insulating layer 105b and the first insulating layer 105a through opening 166.The filling of second electrode 150, which runs through, to be opened
Mouth 166 and the weldering portion 190a and the second type semiconductor layer 130 for being electrically connected second metal layer 190.Run through second through opening 167
Insulating layer 105b and the first insulating layer 105a.The filling of first electrode 140 is through opening 167 and is electrically connected the first metal layer 180
Weldering portion 180a and the first type semiconductor layer 110.Light emitting diode 400A have effect similar with light emitting diode 300A with
Advantage just no longer repeats herein.Unlike light-emitting diode chip for backlight unit 300 ', insulating pattern 103A has towards second type half
The first surface 103f of conductor layer 130 and backwards the second surface 103g of the second type semiconductor layer 130.In particular, insulation figure
Case 103A also has the inclined-plane 103h being connected between first surface 103f and second surface 103g.Inclined-plane 103h is relative to first
Surface 103f and second surface 103g is tilted.
Figure 23 and Figure 24 is the diagrammatic cross-section of the light emitting diode of one embodiment of the invention.Luminous the two of Figure 23 and Figure 24
The upper schematic diagram of pole pipe 500A is identical as the upper schematic diagram of light emitting diode 500 of Fig. 7.In particular, Figure 23 corresponds to Fig. 7
Hatching line C-D, Figure 24 corresponds to the hatching line G-H of Fig. 7.About the upper schematic diagram of light emitting diode 500A, Fig. 7 is please referred to,
This is just not repeated to show.The light emitting diode 500 of light emitting diode 500A and Figure 10 and Figure 12 of Figure 23 and Figure 24 is similar, because
This identical or corresponding component is indicated with identical or corresponding label.
Light emitting diode 500A and the difference of light emitting diode 500 are: the insulating pattern 103A of light emitting diode 500A
It is different from the insulating pattern 103 of light emitting diode 500.Below mainly with regard to explaining at this difference, the two is identical or corresponding section,
Also please according to the label in Fig. 7, Figure 23 and Figure 24 referring to preceding description, just no longer repeat herein.
Please refer to Fig. 7, Figure 23 and Figure 24, light emitting diode 500A includes the first type semiconductor layer 110, luminescent layer 120, the
Two type semiconductor layers 130, first electrode 140, second electrode 150 and Bragg reflection structure 560 '.Luminescent layer 120 is located at the
Between one type semiconductor layer 110 and the second type semiconductor layer 130.First electrode 140 is electrically connected the first type semiconductor layer 110.
Second electrode 150 is electrically connected the second type semiconductor layer 130.First electrode 140 and second electrode 150 are all located at Bragg reflection
Phase the same side of structure 560 '.
As shown in Fig. 7 and Figure 23, at the notch N140 of first electrode 140, the first type semiconductor layer 110, luminescent layer
120, the second type semiconductor layer 130, insulating pattern 103A, conductive layer 101, second metal layer 190 and Bragg reflection structure
560 ' are sequentially stacked in growth substrate 170.The profile of insulating pattern 103A corresponds to the profile and the two of second metal layer 190
It overlaps each other.Specifically, as shown in figure 23, second metal layer 190 includes finger portion 190b, and the portion 190b of finger corresponds to status first
Without Chong Die with first electrode 140 in the notch N140 of electrode 140.In addition, Bragg reflection structure 560 ' overlaps finger portion
190b。
As shown in Fig. 7 and Figure 24, in the area where second electrode 150, the first type semiconductor layer 110, luminescent layer
120, the second type semiconductor layer 130, insulating pattern 103A, conductive layer 101, second metal layer 190 and Bragg reflection structure
560 ' are sequentially stacked in growth substrate 170.The profile of insulating pattern 103A corresponds to the profile and the two of second metal layer 190
It overlaps each other.Specifically, as shown in figure 24, the weldering portion 190a of second metal layer 190 overlaps second electrode 150, and cloth
Glug catoptric arrangement 560 ' disconnects in the region corresponding to weldering portion 190a, so that the weldering portion 190a of second metal layer 190 is physically
With connection second electrode 150 in electrical property.That is, the weldering portion 190a of second metal layer 190 not with Bragg reflection structure
560 ' overlappings.
By Fig. 7, Figure 23 and Figure 24 it is found that the first metal layer 180 and second metal layer 190 are all anti-including overlapping Prague
Penetrate structure 560 ' a part and underlapped another part in Bragg reflection structure 560 '.Overlap Bragg reflection knot
The partial metal layers (i.e. part the first metal layer 180 or part second metal layer 190) of structure 560 ' will not overlap the first and second electricity
Pole 140,150.In this way, which light emitting diode 500A there can be more uniform thickness, and help to improve light emitting diode
500A is bonded to yield when other components.
Unlike light-emitting diode chip for backlight unit 500, insulating pattern 103A has the towards the second type semiconductor layer 130
One surface 103f and backwards the second surface 103g of the second type semiconductor layer 130.In particular, insulating pattern 103A also has company
The inclined-plane 103h being connected between first surface 103f and second surface 103g.Inclined-plane 103h is relative to first surface 103f and second
Surface 103g inclination.Insulating pattern 103A has current blocking effect.Conductive layer 101 and the setting of insulating pattern 103A can be used to
Scattered current to avoid current convergence in certain positions of luminescent layer 120, and then divides the light emitting region of luminescent layer 120 uniformly
Cloth.Furthermore, insulating pattern 103A can be by the way of Figure 19 A or the mode of Figure 19 B designs.
In conclusion the side wall of Bragg reflection structure is an inclined-plane in the light emitting diode of one embodiment of the invention,
Therefore film layer (such as: second electrode) of the configuration in Bragg reflection structure can be coated on Bragg reflection structure well
On, and facilitate the performance boost of light emitting diode.
Finally, it should be noted that the above embodiments are only used to illustrate the technical solution of the present invention., rather than its limitations；To the greatest extent
Pipe present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that: its according to
So be possible to modify the technical solutions described in the foregoing embodiments, or to some or all of the technical features into
Row equivalent replacement；And these are modified or replaceed, various embodiments of the present invention technology that it does not separate the essence of the corresponding technical solution
The range of scheme.
Claims (8)
1. a kind of light emitting diode characterized by comprising
Semiconductor structure, including one first type semiconductor layer, one second type semiconductor layer and to be configured at first type half
A luminescent layer between conductor layer and second type semiconductor layer；
One insulation system is configured on the semiconductor structure, and the insulation system includes one first insulating layer, one second insulation
Layer and the Distributed Bragg Reflection structure coated completely by first insulating layer and a second insulating layer；
One first patterned metal layer is configured in first type semiconductor layer and is electrically connected, and is located at described exhausted
Between edge structure and first type semiconductor layer, first patterned metal layer includes one first weldering portion and one and described the
First finger portion of one weldering portion connection；
One current spreading layer is configured in second type semiconductor layer and is electrically connected, and is located at the insulation system
Between second type semiconductor layer；
One second patterned metal layer, is configured on the current spreading layer and is electrically connected, and is located at the insulation and ties
Between structure and the current spreading layer, second patterned metal layer includes that one second weldering portion and one connect with second weldering portion
The the second finger portion connect；And
One first electrode and a second electrode, are separatedly arranged on the insulation system；
Wherein, the insulation system has at least one first to run through opening through opening and at least one second, and described first runs through
Opening exposes part first weldering portion, and described second exposes part second weldering portion through opening, wherein described the
One electrode and the second electrode are electrically connected at institute through opening through opening and described second via described first respectively
State the first patterned metal layer and second patterned metal layer；
Wherein, the Distributed Bragg Reflection structure is not overlapped in first weldering portion and second weldering portion.
2. light emitting diode according to claim 1, which is characterized in that further include an at least insulating pattern, be configured at institute
It states between current spreading layer and second type semiconductor layer and is contacted with second type semiconductor layer, wherein second figure
Case metal layer corresponds to the insulating pattern, and the bottom of second patterned metal layer is located at the bottom of the insulating pattern
Within the scope of.
3. light emitting diode according to claim 2, which is characterized in that the insulating pattern has the side table on an inclined-plane
Face, the side surface on the inclined-plane and second type semiconductor layer accompany an acute angle theta1, 10 °≤θ1≦80°。
4. light emitting diode according to claim 2, which is characterized in that the insulating pattern has the side table on an inclined-plane
Face, the side surface on the inclined-plane and second type semiconductor layer accompany an acute angle theta1, 30 °≤θ1≦50°。
5. light emitting diode according to claim 2, which is characterized in that the insulating pattern include multiple first sublayers and
Multiple second sublayers, first sublayer are alternately stacked with second sublayer, and first sublayer and second sublayer
Material it is different.
6. light emitting diode according to claim 2, which is characterized in that the insulating pattern include multiple first sublayers and
Multiple second sublayers, first sublayer are alternately stacked with second sublayer, and first sublayer and second sublayer
Material it is identical, and its density is different.
7. light emitting diode according to claim 1, which is characterized in that the Bragg reflection structure is at least covering
The reflectivity of a reflected wavelength range of 0.8X nm to 1.8X nm is 90% or more, which, should to issue a light beam
Light beam has a peak wavelength in an emission wavelength range, and X is the peak wavelength of the emission wavelength range.
8. light emitting diode according to claim 1, which is characterized in that the Bragg reflection structure is at least covering
The reflectivity of a reflected wavelength range of 0.9X nm to 1.6X nm is 95% or more, which, should to issue a light beam
Light beam has a peak wavelength in an emission wavelength range, and X is the peak wavelength of the emission wavelength range.
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201562151377P | 2015-04-22 | 2015-04-22 | |
| US62/151377 | 2015-04-22 | ||
| US201562168921P | 2015-06-01 | 2015-06-01 | |
| US62/168921 | 2015-06-01 | ||
| US15/045,279 US10038121B2 (en) | 2015-02-17 | 2016-02-17 | Light emitting diode with Bragg reflector |
| US15/045279 | 2016-02-17 | ||
| CN201610256143.8A CN106067505B (en) | 2015-04-22 | 2016-04-22 | Light emitting diode |
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| CN201610256143.8A Division CN106067505B (en) | 2015-04-22 | 2016-04-22 | Light emitting diode |
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| CN110323310B CN110323310B (en) | 2021-04-13 |
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| CN201610256143.8A Active CN106067505B (en) | 2015-04-22 | 2016-04-22 | Light emitting diode |
| CN201910386672.3A Active CN110323310B (en) | 2015-04-22 | 2016-04-22 | Light emitting diode |
| CN202010313803.8A Pending CN111430519A (en) | 2015-04-22 | 2016-04-22 | Light emitting diode |
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| CN114361199A (en) * | 2021-09-15 | 2022-04-15 | 友达光电股份有限公司 | Pixel structure |
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| CN113299680B (en) * | 2020-06-05 | 2023-05-12 | 友达光电股份有限公司 | Display device |
| TWI814434B (en) * | 2022-04-01 | 2023-09-01 | 友達光電股份有限公司 | Light emitting diode array substrate |
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| US20120025244A1 (en) * | 2010-07-28 | 2012-02-02 | Seoul Opto Device Co., Ltd. | Light emitting diode having distributed bragg reflector |
| US20150076547A1 (en) * | 2013-09-17 | 2015-03-19 | Toyoda Gosei Co., Ltd. | Group III Nitride Semiconductor Light-Emitting Device |
| WO2015053595A1 (en) * | 2013-10-11 | 2015-04-16 | 주식회사 세미콘라이트 | Semiconductor light-emitting diode |
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| TWI373153B (en) * | 2008-09-22 | 2012-09-21 | Ind Tech Res Inst | Light emitting diode, and package structure and manufacturing method therefor |
| JP5335562B2 (en) * | 2009-06-02 | 2013-11-06 | ルネサスエレクトロニクス株式会社 | Mesa photodiode and method of manufacturing the same |
| JP5392611B2 (en) * | 2009-09-14 | 2014-01-22 | スタンレー電気株式会社 | Semiconductor light emitting device and method for manufacturing semiconductor light emitting device |
| TWI422077B (en) * | 2010-10-08 | 2014-01-01 | Chi Mei Lighting Tech Corp | Light-emitting diode structure and method for manufacturing the same |
| JP5134167B1 (en) * | 2011-07-14 | 2013-01-30 | パナソニック株式会社 | Nitride semiconductor light emitting device |
| TWI546844B (en) * | 2012-10-09 | 2016-08-21 | 晶元光電股份有限公司 | Semiconductor light emitting device and method of fabricating the same |
| CN103700698B (en) * | 2013-12-30 | 2016-06-15 | 北京京东方光电科技有限公司 | The preparation method of a kind of thin film transistor, thin film transistor and display panel |
| CN105225943B (en) * | 2015-10-26 | 2018-03-06 | 中国科学院微电子研究所 | Method for controlling inclination angle in anisotropic wet etching process of silicon oxide |
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|---|---|---|---|---|
| US20120025244A1 (en) * | 2010-07-28 | 2012-02-02 | Seoul Opto Device Co., Ltd. | Light emitting diode having distributed bragg reflector |
| US20150076547A1 (en) * | 2013-09-17 | 2015-03-19 | Toyoda Gosei Co., Ltd. | Group III Nitride Semiconductor Light-Emitting Device |
| WO2015053595A1 (en) * | 2013-10-11 | 2015-04-16 | 주식회사 세미콘라이트 | Semiconductor light-emitting diode |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114361199A (en) * | 2021-09-15 | 2022-04-15 | 友达光电股份有限公司 | Pixel structure |
| CN114361199B (en) * | 2021-09-15 | 2024-06-21 | 友达光电股份有限公司 | Pixel structure |
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| Publication number | Publication date |
|---|---|
| TWI715568B (en) | 2021-01-11 |
| TWI765450B (en) | 2022-05-21 |
| CN111430519A (en) | 2020-07-17 |
| CN110323310B (en) | 2021-04-13 |
| CN106067505A (en) | 2016-11-02 |
| TW201707234A (en) | 2017-02-16 |
| CN106067505B (en) | 2020-05-15 |
| TW202115924A (en) | 2021-04-16 |
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