CN110318028A - Plasma source mechanism and film forming device - Google Patents
Plasma source mechanism and film forming device Download PDFInfo
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- CN110318028A CN110318028A CN201810265405.6A CN201810265405A CN110318028A CN 110318028 A CN110318028 A CN 110318028A CN 201810265405 A CN201810265405 A CN 201810265405A CN 110318028 A CN110318028 A CN 110318028A
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- 230000007246 mechanism Effects 0.000 title claims abstract description 42
- 238000009832 plasma treatment Methods 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 238000004544 sputter deposition Methods 0.000 claims description 7
- 239000010408 film Substances 0.000 description 62
- 239000004615 ingredient Substances 0.000 description 11
- 238000010586 diagram Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 125000006850 spacer group Chemical group 0.000 description 4
- 230000006978 adaptation Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000011981 development test Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012549 training Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/46—Sputtering by ion beam produced by an external ion source
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Plasma & Fusion (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Chemical & Material Sciences (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The present invention discloses a kind of plasma source mechanism and film forming device, wherein the plasma source mechanism can be suitable for the film forming device with vacuum tank；The plasma source mechanism includes: the shell being installed on outside the vacuum tank；Positioned at the intracorporal antenna module of the shell, via dielectric portion configuration outside the vacuum tank；The antenna module includes mutiple antennas portion；Each antenna part has the interconnecting piece for being individually applied RF power；Any antenna part region and other described non-overlapping regions in antenna part region.Plasma source mechanism and film forming device provided by the invention can expand ICP discharge range.
Description
Technical field
The present invention relates to optical thin films to form field more particularly to a kind of plasma source mechanism and film forming device.
Background technique
All the time, it is known that ICP (inductive type plasma) electric discharge using coil very early, and proposes various
The ICP (for example, referenced patent file 1,2) of shape.
In recent years, although it is desirable to carry out ICP electric discharge to large area region, still, in order to ensure the ICP of large area discharges,
It generallys use two ways at present: 1, expanding antenna size；2, mutiple antennas is vertically arranged.It finds in use, it should
What two ways had can not carry out RF Matching and modification, and can not apply electric power；Press down or cause the substance of sputtering there are impurity,
Influence quality of forming film.
Patent document 1: Japanese Unexamined Patent Publication 2005-256024 bulletin
Patent document 2: No. 3188353 bulletins of Japanese Patent No.
Summary of the invention
It is found by inventor's many years development test, first way is due to antenna module increase meeting in above two mode
Leading to inductance (L) ingredient of antenna becomes excessive, to be difficult to carry out RF matching；And the second way, as shown in Figure 1, each
Antenna 100 is located in respective antenna chamber 200, independently of each other；Antenna chamber 200 in an installation can be solid using metal fixing 300
It is fixed, so as to cause there are metallic spacers 300 between two neighboring antenna 100 (or antenna chamber 200), so that in ICP electric discharge shape
Sputtering is formed at the metallic spacer 300 in plasma process, leading to the substance sputtered, there are impurity, influence quality of forming film.
In view of the deficiency of above-mentioned technology, the present invention it is necessary to provide a kind of plasma source mechanism and film forming device,
ICP discharge range can be expanded.
In order to achieve the above objectives, the present invention adopts the following technical scheme:
A kind of plasma source mechanism can be suitable for the film forming device with vacuum tank；The plasma
Source mechanism includes:
The shell being installed on outside the vacuum tank；
Positioned at the intracorporal antenna module of the shell, via dielectric portion configuration outside the vacuum tank；The antenna sets
Part includes mutiple antennas portion；Each antenna part has the interconnecting piece for being individually applied RF power；Any antenna
Portion region and other described non-overlapping regions in antenna part region.
As a preferred embodiment, the quartz glass that the shell is integrally formed.
As a preferred embodiment, between two neighboring antenna part, there are gaps.
As a preferred embodiment, the antenna part has two vortex-like coils in parallel；The antenna part
Length direction is the orientation of two vortex-like coils.
As a preferred embodiment, multiple antenna parts are arranged along the length direction of the antenna part.
As a preferred embodiment, the width in the gap is the 0.5 of described two vortex-like coil spacing distances
To 1.0 times.
As a preferred embodiment, each antenna part respectively connects a high frequency electric source by the interconnecting piece.
A kind of film forming device characterized by comprising
Vacuum tank；
It is set to the film-forming region in the vacuum tank；The film-forming region is used to be formed by sputtering on film forming object
Film；
It is set to the plasma treatment zone in the vacuum tank；The plasma treatment zone passes through as above any
Plasma source mechanism described in embodiment carries out plasma treatment to the film on the film forming object；And
The rotary support mechanism being set in the vacuum tank；The rotary support mechanism can support the film forming pair
It is rotated as in the state of, and along with the rotation, the film forming object passes through the film-forming region and the plasma
Body processing region is to form required film.
As a preferred embodiment, the rotary support mechanism surrounds a pivot axis；
The arragement direction of multiple antenna parts in the plasma source mechanism is parallel with the pivot center.
The utility model has the advantages that
Find out by above technical scheme, plasma source mechanism of the invention is same by the way that mutiple antennas portion to be set to
In shell, correspondingly, there is no metal spacers between two antenna parts, thus, the plasma source machine of present embodiment
Structure can not only expand ICP discharge range, promote Film build range, improve production efficiency, and discharge to form plasma in ICP
It not will form sputtering sundries in the process, guarantee the quality of film forming.
Referring to following description and accompanying drawings, only certain exemplary embodiments of this invention is disclosed in detail, specifies original of the invention
Reason can be in a manner of adopted.It should be understood that embodiments of the present invention are not so limited in range.In appended power
In the range of the spirit and terms that benefit requires, embodiments of the present invention include many changes, modifications and are equal.
The feature for describing and/or showing for a kind of embodiment can be in a manner of same or similar one or more
It uses in a other embodiment, is combined with the feature in other embodiment, or the feature in substitution other embodiment.
It should be emphasized that term "comprises/comprising" refers to the presence of feature, one integral piece, step or component when using herein, but simultaneously
It is not excluded for the presence or additional of one or more other features, one integral piece, step or component.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
Some embodiments of invention for those skilled in the art without any creative labor, can be with root
Other attached drawings are obtained according to these attached drawings.
Fig. 1 is existing plasma source mechanism structural schematic diagram；
Fig. 2 is plasma source mechanism structural schematic diagram provided by one embodiment of the present invention；
Fig. 3 is the film forming device schematic diagram using plasma source mechanism shown in Fig. 2；
Fig. 4 is Film build range schematic diagram when being carried out using the film forming device of Fig. 3 into film test.
Specific embodiment
Technical solution in order to enable those skilled in the art to better understand the present invention, below in conjunction with of the invention real
The attached drawing in example is applied, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that described implementation
Example is only a part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, this field is common
Technical staff's every other embodiment obtained without making creative work, all should belong to guarantor of the present invention
The range of shield.
It should be noted that it can directly on the other element when element is referred to as " being set to " another element
Or there may also be elements placed in the middle.When an element is considered as " connection " another element, it, which can be, is directly connected to
To another element or it may be simultaneously present centering elements.Term as used herein " vertical ", " horizontal ", " left side ",
" right side " and similar statement for illustrative purposes only, are not meant to be the only embodiment.
Unless otherwise defined, all technical and scientific terms used herein and belong to technical field of the invention
The normally understood meaning of technical staff is identical.Term as used herein in the specification of the present invention is intended merely to description tool
The purpose of the embodiment of body, it is not intended that in the limitation present invention.Term as used herein "and/or" includes one or more
Any and all combinations of relevant listed item.
Fig. 2, Fig. 3 are please referred to, for a kind of plasma source mechanism 10 that one embodiment of the present invention provides, can be fitted
For the film forming device with vacuum tank 30；The plasma source mechanism 10 includes: to be installed on outside the vacuum tank 30
Shell 1；Antenna module in the shell 1, via the configuration of dielectric portion 5 outside the vacuum tank 30；The day
Line component includes mutiple antennas portion 2；Each antenna part 2 has the interconnecting piece 3 for being individually applied RF power；Any institute
State 2 region of antenna part and other non-overlapping regions in 2 region of antenna part.
Please continue to refer to Fig. 2, Fig. 3, another embodiment of the present invention also provides a kind of film forming device, comprising: true
Empty slot 30；The film-forming region (not shown) being set in the vacuum tank 30；The film-forming region is used for by sputtering at film forming
Film is formed on object 40；It is set to the plasma treatment zone in the vacuum tank 30；The plasma treatment zone is logical
It crosses plasma source mechanism 10 as described in the embodiment and plasma treatment is carried out to the film on the film forming object 40；With
And it is set to the rotary support mechanism in the vacuum tank 30；The rotary support mechanism (not shown) can support it is described at
It is rotated in the state of film object 40, and along with the rotation, the film forming object 40 passes through the film-forming region and institute
Plasma treatment zone is stated to form required film.
In one embodiment, film forming device has vacuum tank 20, which is to have chamber container, the chamber
Room is vacuum tank 30, and vacuum tank 30 can connect in not shown vacuum pumping system, thus in shell 1 formed vacuum at
Membrane environment.Moreover, carrying out the object to be processed of plasma treatment for example by plasma source mechanism 10 in the inside of vacuum tank 30
Configuration is on substrate 50 (or substrate 50).
In the present embodiment, plasma source mechanism 10 has shell 1, dielectric portion 5 and antenna module.Shell 1
It can be fixed on shell 1 in a manner of the opening formed from the wall that vacuum tank 20 is blocked in outside, specifically, the shell
The quartz glass 1 that body 1 can be integrally formed.Dielectric portion 5 can be fixed on front surface (front-rear direction of shell 1
It is rear far from vacuum tank 30 close to vacuum tank 30 before to be) on, as a result, in the area surrounded by shell 1 and dielectric portion 5
Domain forms the antenna receiving room 4 for accommodating antenna module.Specifically, dielectric portion 5 for example can be by the plate quartz of specific thickness
It is formed, and shell 1 can be fixed on the surface of vacuum tank 30, in one embodiment, which is rectangle
Plate.
In the present embodiment, antenna module is located in shell 1, specifically, being contained in antenna receiving room 4.Antenna storage
Room 4 is separated from the inside (vacuum tank 30) of vacuum tank 20.That is, antenna receiving room 4 and vacuum tank 30 by dielectric portion 5 to be separated
State form independent space.In addition, state shape of the outside of antenna receiving room 4 and vacuum tank 20 to be separated by shell 1
At independent space.Antenna receiving room 4 can be connected to via pipeline with vacuum pump, be vacuumized by the vacuum pump, be received to antenna
Receive room 4 inside be exhausted so as to make antenna receiving room 4 become vacuum state, so that antenna module is in vacuum environment
Under.
In the present embodiment, antenna module has multiple (two or more) antenna parts 2.Wherein, each antenna
Portion 2 has the interconnecting piece 3 for being individually applied RF power.Each antenna part 2 can receive by interconnecting piece 3 from alternating current
The power supply in source 7 makes to generate induction field in vacuum tank 30, to generate plasma.In one embodiment, each antenna
Portion 2 can be connect via the adaptation 6 of storage match circuit with AC power source 7.Variable capacitance can be equipped in adaptation 6
Device, the variable condenser can change the power supplied from AC power source 7 to antenna part 2.
As can be seen that mutiple antennas portion 2 is located in same housing 1 in present embodiment, correspondingly, two antenna parts 2 it
Between there is no metal spacers, thus, the plasma source mechanism 10 of present embodiment discharges to form plasma mistake in ICP
It not will form sputtering sundries in journey, guarantee the quality of film forming.
Mutually indepedent between each antenna part 2, in the case where powering on 7 power supply, each antenna part 2 can carry out ICP
Electric discharge generate plasma, individual antenna portion 2 other antenna parts 2 be not present or cold situation under do not influence itself generate
Induction field.For convenience of connection power supply 7, each antenna part 2 has interconnecting piece 3, and each antenna part 2 passes through the interconnecting piece
3 can respectively connect a high frequency electric source 7.In one embodiment, each antenna part 2 in present embodiment can be with the list in Fig. 1
A 100 size of antenna can be identical, and the power supply 7 connected can also be identical as existing power supply 7, existing so as to continue to use
RF (radio frequency) matching relationship, be not in can not RF matching the case where.
Moreover, to obtain preferable ICP discharge range, any 2 region of antenna part and other described antenna parts 2
The non-overlapping region in region.As shown in Figure 1, the area that two antenna parts 2 cover or occupy on paper is mutually indepedent, and
Without coincidence.It can certainly be interpreted as, the ICP region of discharge and the ICP of antenna part 2 described in other of any antenna part 2 are put
Electric region is not overlapped.That is, perspective plane of each antenna part 2 along above-mentioned front-rear direction in the plane vertical with the projecting direction
Product is not overlapped.
In shell 1, the positional relationship between each antenna part 2 only needs non-overlapping region, for example, mutiple antennas portion
2 can the arrangement (on the basis of plummet direction) up and down, perhaps left and right alignment arrangement (height consistent) or left and right are staggered arrangement
Arrangement partial amt or so the arrangement etc. up and down of (height is inconsistent) or partial amt.
It continues from the preceding paragraph citing, when about 2 mutiple antennas portion arranges, multiple antenna part 2 can correspond to biggish vertical
Film forming height, when the object 40 that forms a film is rotated along a vertical axes, in the case of this kind mutiple antennas portion 2 can carry out large area at
Film.In addition, being rotated at the arrangement of mutiple antennas portion 2 or so (or along the arrangement of film forming 40 rotation direction of object) in film forming object 40
Mutiple antennas portion 2, so as to improve film forming efficiency, can be conducive to fast short-term training to same position multiple discharge during one week
Film.
In one embodiment, the rotary support mechanism can surround a pivot axis；The plasma source
The arragement direction of multiple antenna parts 2 in mechanism 10 is parallel with the pivot center.Preferably, the pivot center and gravity
Direction is parallel, and about 2 mutiple antennas portion is arranged, and then can have biggish film forming area.
In one embodiment, the antenna part 2 has two vortex-like coil 2a, 2b in parallel.The length of the antenna part 2
Spend the orientation that direction is two described vortex-like coil 2a, 2b.As shown in Figure 1, two vortex-like coil 2a, 2b vertically (
When scope of readers is to Fig. 1, certainly, two vortex-like coil 2a, 2b can also arrange up and down along gravity direction in actual use) arrangement,
To which individual antenna portion 2 can form biggish film forming area.
Wherein, in two vortex-like coil 2a, 2b, side's terminals side is grounded respectively, another party of two vortex-like coil 2a, 2b
Terminals side can connect above-mentioned adaptation 6 and be respectively relative to high frequency electric source 7 and be connected in parallel, to be applied separately high-frequency electrical
Power.
Certainly, two vortex-like coil 2a, 2b are not limited to arrange up and down, can also control arrangement, oblique arrangement etc.,
The length direction of antenna part 2 can be the length direction intuitively reflected in the visual situation of people.In addition, antenna part 2 is not
Two vortex-like coil 2a, 2b are confined to arrange to be formed according to a direction, or two vortex-like coils are overlapped to be formed, such as
One big vortex-like coil, inside be substantially equipped with small vortex-like coil etc. with one heart.
To obtain biggish film forming area, multiple antenna parts 2 are arranged along the length direction of the antenna part 2.So
Setting can make film forming effective range broaden, therefore lift-launch amount, the film-forming amount of large substrate and the object that forms a film can increase, from
And promote productivity；Meanwhile the expansion for the effective range that forms a film, it is also beneficial to form the single film of large area.
In the present embodiment, as shown in Fig. 2, it is mutually dry when RF power to prevent two neighboring antenna part 2 to be applied
It disturbs, there are gap Ls between two neighboring antenna part 2.When scope of readers is to Fig. 1, two about 2 antenna parts are arranged, and upper and lower two
It is spaced a distance to form gap L between antenna part 2.Preferably, (along antenna part length direction) width of the gap L is
0.5 to 1.0 times of described two vortex-like coil 2a, 2b (along antenna part length direction) spacing distance D.
With the film forming device that Fig. 3 illustrated embodiment provides can carry out 400mm to 800mm Film build range at
Film.Under one one-tenth film test, formed a film using the silica that film forming device shown in Fig. 3 carries out 800mm Film build range, 5
Formed film (1. to 5.) is vertically arranged according to shown in Fig. 4, after film forming measure silica membrane refractive index and
Attenuation coefficient, as a result as shown in the table:
1. SiO of table2Refractive index and subtrahend coefficient data
| Position | Refractive index | Attenuation coefficient |
| 1 | 1.480 | 1.60E-04 |
| 2 | 1.481 | 1.10E-04 |
| 3 | 1.476 | 1.70E-04 |
| 4 | 1.480 | 1.20E-04 |
| 5 | 1.478 | 1.50E-04 |
From upper table data can be seen that using the film forming device of present embodiment carry out under big Film build range at
There is no problem for the result of film, the refractive index of formed film and attenuation coefficient, this explanation is using having above-mentioned plasma source machine
Large area film forming can be effectively performed in the film forming device of structure, so that film forming effective range broadens, therefore, so that large-scale base
Plate and lift-launch amount can increase, and promote the productivity for forming film.
Herein cited any digital value all include between lower limit value to upper limit value with the lower value of an incremented and
The all values of upper value, there are the intervals of at least two units between any lower value and any much higher value.For example, such as
Fruit elaborates that the quantity an of component or the value of process variable (such as temperature, pressure, time etc.) are from 1 to 90, preferably from 20
To 80, more preferably from 30 to 70, then purpose is arrived in order to illustrate also clearly listing such as 15 to 85,22 in the specification
68,43 to 51,30 to 32 is equivalent.For the value less than 1, suitably think that a unit is 0.0001,0.001,0.01,0.1.
These are only intended to the example clearly expressed, it is believed that all possibility for the numerical value enumerated between minimum and peak
Combination is all expressly set forth in the specification in a similar manner.
Unless otherwise indicated, all ranges all include all numbers between endpoint and endpoint.It is used together with range
" about " or " approximation " be suitable for two endpoints of the range.Thus, " about 20 to 30 " are intended to cover that " about 20 to about
30 ", including at least the endpoint indicated.
All articles and reference disclosed, including patent application and publication, for various purposes by quoting knot
Together in this.Describing combined term " substantially by ... constitute " should include identified element, ingredient, component or step and reality
Other elements, ingredient, component or the step of the basic novel feature of the combination are not influenced in matter.Using term "comprising" or
" comprising " describes the combination of element here, ingredient, component or step it is also contemplated that substantially by these elements, ingredient, component
Or the embodiment that step is constituted.Here by using term " can with ", it is intended to illustrate that " can with " includes described any
Attribute is all optional.
Multiple element, ingredient, component or step can be provided by single integrated component, ingredient, component or step.Optionally
Ground, single integrated component, ingredient, component or step can be divided into multiple element, ingredient, component or the step of separation.It is used to
The open "a" or "an" for describing element, ingredient, component or step is not said to exclude other elements, ingredient, component
Or step.
It should be understood that above description is to illustrate rather than to be limited.By reading above-mentioned retouch
It states, many embodiments and many applications except provided example all will be aobvious and easy for a person skilled in the art
See.Therefore, the range of this introduction should not be determined referring to foregoing description, but should referring to appended claims and this
The full scope of the equivalent that a little claims are possessed determines.For comprehensive purpose, all articles and with reference to including special
The disclosure of benefit application and bulletin is all by reference to being incorporated herein.Theme disclosed herein is omitted in preceding claims
Any aspect is not intended to abandon the body matter, also should not be considered as inventor the theme is not thought of as it is disclosed
A part of subject matter.
Claims (9)
1. a kind of plasma source mechanism can be suitable for the film forming device with vacuum tank；It is characterized in that, described
Plasma source mechanism includes:
The shell being installed on outside the vacuum tank；
Positioned at the intracorporal antenna module of the shell, via dielectric portion configuration outside the vacuum tank；The antenna module packet
Include mutiple antennas portion；Each antenna part has the interconnecting piece for being individually applied RF power；Any antenna part institute
In region and other described non-overlapping regions in antenna part region.
2. plasma source mechanism as described in claim 1, it is characterised in that: the quartz glass that the shell is integrally formed
Shell.
3. plasma source mechanism as claimed in claim 1 or 2, it is characterised in that: between existing between two neighboring antenna part
Gap.
4. plasma source mechanism as claimed in claim 3, it is characterised in that: the antenna part has in parallel two vortex-like
Coil；The length direction of the antenna part is the orientation of two vortex-like coils.
5. plasma source mechanism as claimed in claim 4, it is characterised in that: multiple antenna parts are along the antenna part
Length direction arrangement.
6. plasma source mechanism as claimed in claim 5, it is characterised in that: the width in the gap is described two vortex-like
0.5 to 1.0 times of coil spacing distance.
7. plasma source mechanism as described in claim 1, it is characterised in that: each antenna part passes through the interconnecting piece
One high frequency electric source of each connection.
8. a kind of film forming device characterized by comprising
Vacuum tank；
It is set to the film-forming region in the vacuum tank；The film-forming region is used to form film on film forming object by sputtering at；
It is set to the plasma treatment zone in the vacuum tank；The plasma treatment zone passes through such as claim 1
Plasma treatment is carried out to the film on the film forming object to 7 any plasma source mechanisms；And
The rotary support mechanism being set in the vacuum tank；The rotary support mechanism can support the film forming object
It is rotated under state, and along with the rotation, the film forming object passes through at the film-forming region and the plasma
Region is managed to form required film.
9. film forming device as claimed in claim 8, it is characterised in that: the rotary support mechanism surrounds a pivot center
Rotation；
The arragement direction of multiple antenna parts in the plasma source mechanism is parallel with the pivot center.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810265405.6A CN110318028A (en) | 2018-03-28 | 2018-03-28 | Plasma source mechanism and film forming device |
| TW107123415A TW201942944A (en) | 2018-03-28 | 2018-07-06 | Plasma source mechanism and thin-film formation device |
| PCT/JP2019/010606 WO2019188355A1 (en) | 2018-03-28 | 2019-03-14 | Plasma source mechanism and thin-film formation device |
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| CN201810265405.6A CN110318028A (en) | 2018-03-28 | 2018-03-28 | Plasma source mechanism and film forming device |
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| CN110318028A true CN110318028A (en) | 2019-10-11 |
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| CN (1) | CN110318028A (en) |
| TW (1) | TW201942944A (en) |
| WO (1) | WO2019188355A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113337809A (en) * | 2020-02-14 | 2021-09-03 | 株式会社新柯隆 | Thin film forming apparatus |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2024024123A1 (en) * | 2022-07-27 | 2024-02-01 | 日新電機株式会社 | Plasma treatment device |
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| Publication number | Publication date |
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| TW201942944A (en) | 2019-11-01 |
| WO2019188355A1 (en) | 2019-10-03 |
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