CN110307919A - A kind of high-sensitivity wide-range capacitive force transducer and preparation method thereof - Google Patents
A kind of high-sensitivity wide-range capacitive force transducer and preparation method thereof Download PDFInfo
- Publication number
- CN110307919A CN110307919A CN201910701969.4A CN201910701969A CN110307919A CN 110307919 A CN110307919 A CN 110307919A CN 201910701969 A CN201910701969 A CN 201910701969A CN 110307919 A CN110307919 A CN 110307919A
- Authority
- CN
- China
- Prior art keywords
- silicon
- force transducer
- capacitive force
- thin film
- upper layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 157
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 157
- 239000010703 silicon Substances 0.000 claims abstract description 157
- 239000000758 substrate Substances 0.000 claims abstract description 59
- 239000010408 film Substances 0.000 claims abstract description 52
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 45
- 229910052796 boron Inorganic materials 0.000 claims abstract description 45
- 239000010409 thin film Substances 0.000 claims abstract description 44
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 41
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 41
- 239000011521 glass Substances 0.000 claims abstract description 28
- 239000003990 capacitor Substances 0.000 claims description 21
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 239000012528 membrane Substances 0.000 claims description 5
- 238000000926 separation method Methods 0.000 claims description 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 5
- RZVXOCDCIIFGGH-UHFFFAOYSA-N chromium gold Chemical compound [Cr].[Au] RZVXOCDCIIFGGH-UHFFFAOYSA-N 0.000 claims description 4
- 238000009792 diffusion process Methods 0.000 claims description 4
- 238000001259 photo etching Methods 0.000 claims description 4
- 239000013078 crystal Substances 0.000 claims description 3
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 238000001039 wet etching Methods 0.000 claims description 3
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 10
- 238000000034 method Methods 0.000 description 5
- 230000035945 sensitivity Effects 0.000 description 4
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- CFOAUMXQOCBWNJ-UHFFFAOYSA-N [B].[Si] Chemical compound [B].[Si] CFOAUMXQOCBWNJ-UHFFFAOYSA-N 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- -1 tetramethyl aqua ammonia Chemical compound 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/14—Measuring force or stress, in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators
- G01L1/142—Measuring force or stress, in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators using capacitors
- G01L1/148—Measuring force or stress, in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators using capacitors using semiconductive material, e.g. silicon
Abstract
The present invention discloses a kind of high-sensitivity wide-range capacitive force transducer and preparation method thereof, belongs to sensor technical field.The high-sensitivity wide-range capacitive force transducer includes the silicon substrate and glass backing plate being mutually bonded, and the first end of the silicon substrate is connected with upper layer silicon thin film by medium；The surface of the upper layer silicon thin film is sequentially formed with the first boron silicide film and the first film top electrode；The second end of the silicon substrate is formed with lower layer's silicon cantilever, and the upper surface of the second end of the silicon substrate and lower layer's silicon cantilever is covered with the second boron silicide film；The surface of second boron silicide film is sequentially formed with the second boron silicide film and the second film top electrode；The high-sensitivity wide-range capacitive force transducer further includes underlayer electrode, positioned at the top surface of the glass backing plate.
Description
Technical field
The present invention relates to sensor technical field, in particular to a kind of high-sensitivity wide-range capacitive force transducer and its system
Preparation Method.
Background technique
Force snesor using very extensive, be widely used in water conservancy and hydropower, railway traffic, intelligence and build in life, industry
Numerous industries such as build, produce automatic control, aerospace, military project, electric power, lathe.The type of force snesor is abundant, common power sensing
Device includes capacitive force transducer, resistance-strain chip force snesor, piezoelectric transducer, resonance type force sensor etc..Wherein,
The advantages of capacitive force transducer is that structure is simple, and temperature stability is good, cheap, high sensitivity, and overload capacity is strong.With
The progress and development of science and technology, the requirement to force snesor is higher and higher, and volume requirement is smaller, sensitivity is higher.
Summary of the invention
The purpose of the present invention is to provide a kind of high-sensitivity wide-range capacitive force transducers and preparation method thereof, to realize
The force snesor of small size, high sensitivity, wide-range.
In order to solve the above technical problems, the present invention provides a kind of high-sensitivity wide-range capacitive force transducer, including phase key
The silicon substrate and glass backing plate of conjunction,
The first end of the silicon substrate is connected with upper layer silicon thin film by medium；The surface of the upper layer silicon thin film is sequentially formed with
First boron silicide film and the first film top electrode；
The second end of the silicon substrate is formed with lower layer's silicon cantilever, the second end of the silicon substrate and lower layer's silicon cantilever
Upper surface be covered with the second boron silicide film；The surface of second boron silicide film is sequentially formed with the second boron silicide film and the second film powers on
Pole；
The high-sensitivity wide-range capacitive force transducer further includes underlayer electrode, positioned at the top surface of the glass backing plate.
Optionally, the underlayer electrode is located at the center of the glass backing plate.
Optionally, the first part of the underlayer electrode and first boron silicide film the first parallel plate capacitor of composition, second
Part constitutes the second parallel plate capacitor with second boron silicide film.
Optionally, one end of lower layer's silicon cantilever is connect with the silicon substrate, and the other end is hanging；Its upper surface and institute
Silicon substrate is stated to flush.
Optionally, one end of the upper layer silicon thin film suspends, and the other end is connect by the medium with the silicon substrate.
Optionally, the upper layer silicon thin film is higher than lower layer's silicon cantilever, and when the upper layer silicon thin film is bent downwardly
Lower layer's silicon cantilever can be touched.
Optionally, the thickness of the upper layer silicon thin film is less than the thickness of lower layer's silicon cantilever.
The present invention also provides a kind of preparation methods of high-sensitivity wide-range capacitive force transducer, include the following steps:
There is provided silicon wafer, remove part silicon chip surface silicon membrane layer and corresponding silicon oxide intermediate, formed upper layer silicon thin film simultaneously
Exposed portion silicon substrate；
Heavily boron diffusion is carried out on the surface of the upper layer silicon thin film and the partial silicon substrate of exposing, forms the first boron silicide film and the
Two boron silicide films；
It is lithographically formed top electrode figure, and forms the first silicon fiml top electrode and the second silicon fiml top electrode；
Corrode certain thickness from the silicon substrate back side, back side photoetching forms lower layer's cantilever beam, using hydrofluoric acid wet etching from the back side
By the upper layer silicon thin film and lower layer's cantilever beam separation release；
Glass substrate is provided, one layer of chromium gold is sputtered in the glass substrate as underlayer electrode；
The silicon wafer processed and glass substrate are bonded, the sensor is formed.
Optionally, the substrate of the silicon wafer is (100) crystal orientation.
Optionally, the first silicon fiml top electrode is formed using magnetron sputtering electrode metal aluminium and second silicon fiml powers on
Pole.
A kind of high-sensitivity wide-range capacitive force transducer and preparation method thereof is provided in the present invention, it is described highly sensitive
Wide-range capacitive force transducer includes the silicon substrate and glass backing plate being mutually bonded, and the first end of the silicon substrate is connected by medium
It is connected to upper layer silicon thin film；The surface of the upper layer silicon thin film is sequentially formed with the first boron silicide film and the first film top electrode；The silicon
The second end of substrate is formed with lower layer's silicon cantilever, and the upper surface of the second end of the silicon substrate and lower layer's silicon cantilever is covered
It is stamped the second boron silicide film；The surface of second boron silicide film is sequentially formed with the second boron silicide film and the second film top electrode；The height
Sensitive wide-range capacitive force transducer further includes underlayer electrode, positioned at the top surface of the glass backing plate.
The invention has the following advantages:
(1) the power sensitive beam of two different sensitivities is utilized, upper layer silicon thin film power sensitive beam is more sensitive to power than relatively thin,
Make force sensor in small power, sensitiveer, lower layer's silicon cantilever thickness is larger, be not to power it is so sensitive, be able to bear
Biggish power increases the range of force snesor；
(2) lower layer's silicon cantilever plays the supporting role to upper layer silicon thin film to a certain extent, plays a protective role, so that passing
Sensor is more reliable；
(3) low to the requirement of peripheral measuring circuit using the size of the size reflection power of two capacitances, it is simple and reliable；It can adopt
It is processed with silicon micro mechanical technology, process, batch micro operations are easy and at low cost.
Detailed description of the invention
Fig. 1 is high-sensitivity wide-range capacitive force transducer structural schematic diagram provided by the invention；
Fig. 2 is the flow diagram of high-sensitivity wide-range capacitive force transducer preparation method provided by the invention；
Fig. 3 is to provide the structural schematic diagram of silicon wafer；
Fig. 4 is the schematic diagram for removing silicon membrane layer and corresponding silicon oxide intermediate above the silicon wafer of part；
Fig. 5 is the schematic diagram to form the first boron silicide film and the second boron silicide film；
Fig. 6 is the schematic diagram to form the first silicon fiml top electrode and the second silicon fiml top electrode；
Fig. 7 is to corrode certain thickness schematic diagram at the silicon substrate back side；
Fig. 8 is by the schematic diagram of upper layer silicon thin film and the separation release of lower layer's cantilever beam；
Fig. 9 is the schematic diagram for forming underlayer electrode on a glass substrate.
Specific embodiment
Below in conjunction with the drawings and specific embodiments to a kind of high-sensitivity wide-range capacitive force transducer proposed by the present invention
And preparation method thereof be described in further detail.According to following explanation and claims, advantages and features of the invention will more
It is clear.It should be noted that attached drawing is all made of very simplified form and using non-accurate ratio, only to convenient, apparent
The purpose of the ground aid illustration embodiment of the present invention.
Embodiment one
The present invention provides a kind of high-sensitivity wide-range capacitive force transducer, structure is as shown in Figure 1.The highly sensitive wide amount
Journey capacitive force transducer includes the silicon substrate 1 and glass backing plate 2 being mutually bonded；Wherein, the first end of the silicon substrate 1 passes through Jie
Matter 8 is connected with upper layer silicon thin film 3；The surface of the upper layer silicon thin film 3 is sequentially formed with the first boron silicide film 51 and the first film powers on
Pole 61；The second end of the silicon substrate 1 is formed with lower layer's silicon cantilever 4, and the second end of the silicon substrate 1 and lower layer's silicon are outstanding
The upper surface of arm beam 4 is covered with the second boron silicide film 52；The surface of second boron silicide film 52 is sequentially formed with the second boron silicide film 52
With the second film top electrode 62.Further, the high-sensitivity wide-range capacitive force transducer further includes underlayer electrode 7, is located at
The top surface of the glass backing plate 2, positioned at the center of the glass backing plate 2, i.e., the center of the described underlayer electrode 7 and
The center of the glass backing plate 2 is overlapped.The first part of the underlayer electrode 7 and first boron silicide film 51 constitute first
Parallel plate capacitor, second part and second boron silicide film 52 constitute the second parallel plate capacitor, the capacitance size of two capacitors
It can reflect the size of sensor institute stress.
Specifically, one end of lower layer's silicon cantilever 4 is connect with the silicon substrate 1, the other end is hanging；Its upper surface with
The silicon substrate 1 flushes.One end of the upper layer silicon thin film 3 suspends, and the other end is connected by the medium 8 with the silicon substrate 1
It connects.The upper layer silicon thin film 3 be higher than lower layer's silicon cantilever 4, with the upper surface of lower layer's silicon cantilever 4 there are certain
The gap of distance, the upper layer silicon thin film 3 can touch lower layer's silicon cantilever 4 when being bent downwardly.The upper layer of silicon is thin
The thickness of film 3 is thinner much than the thickness of lower layer's silicon cantilever 4, has higher susceptibility to power.
Referring to Fig. 1, the right half part of underlayer electrode 7 and the first boron silicide film 51 constitute the first parallel plate capacitor, left side
Divide and the second boron silicide film 52 constitutes the second parallel plate capacitor.When applying in lesser power to sensor, the upper layer silicon thin film 3
Deformation occurs for generation first, and the distance between first boron silicide film 51 and the underlayer electrode 7 become smaller, first parallel-plate
Capacitor becomes larger, upper layer silicon thin film 3 and not in contact with lower layer's silicon cantilever 4, and second parallel plate capacitor is constant.The power of application continues
When increase, the deformation of the generation of upper layer silicon thin film 3 increases, and first parallel plate capacitor is also increasing, 3 meeting of upper layer silicon thin film
Lower layer's silicon cantilever 4 is touched, when the power of application is sufficiently large, upper layer silicon thin film 3 can cause lower layer's silicon cantilever 4, and deformation occurs,
Distance between second boron silicide film 52 and underlayer electrode 7 can become smaller, and second parallel plate capacitor can become larger.In this way, according to sensing
The size of first parallel plate capacitor described in device capacitor and the second parallel plate capacitor value, so that it may measurement sensor institute stress
Size, sensor have the characteristics that high-sensitivity wide-range.
High-sensitivity wide-range capacitive force transducer proposed by the present invention is the size for reflecting power using two capacitors.It passes
There are two the power sensitive beams of different power susceptibilitys for sensor, and when applying in lesser power to sensor, upper layer silicon thin film is first
Deformation occurs but not touches lower layer's cantilever beam, and the capacitance of first capacitor changes, and the capacitance of second capacitor is kept
It is constant；When the power of application continues growing, the deformation of the generation of upper layer silicon thin film is increasing, and the capacitance of first capacitor is also got over
Come bigger, when the power of application is sufficiently large, upper layer silicon thin film can touch lower layer's silicon cantilever, cause lower layer's silicon cantilever that shape occurs
When change, variation also takes place in the capacitance of second capacitor.In this way, the sensor can measure lesser power, susceptibility
It is relatively high, biggish power can also be measured, there is wider range.
Embodiment two
The present invention provides a kind of preparation method of high-sensitivity wide-range capacitive force transducer, flow diagram as shown in Fig. 2,
Include the following steps:
Step S21, provide silicon wafer, remove part silicon chip surface silicon membrane layer and corresponding silicon oxide intermediate, formed upper layer
Silicon thin film and exposed portion silicon substrate；
Step S22, heavily boron diffusion is carried out on the surface of the upper layer silicon thin film and the partial silicon substrate of exposing, forms the first boron
Silicon fiml and the second boron silicide film；
Step S23, it is lithographically formed top electrode figure, and forms the first silicon fiml top electrode and the second silicon fiml top electrode；
Step S24, corrode certain thickness from the silicon substrate back side, back side photoetching forms lower layer's cantilever beam, rotten using hydrofluoric acid wet process
Erosion discharges the upper layer silicon thin film and lower layer's cantilever beam separation from the back side；
Step S25, glass substrate is provided, one layer of chromium gold is sputtered in the glass substrate as underlayer electrode；
Step S26, the silicon wafer processed and glass substrate are bonded, form the sensor.
Firstly, providing the silicon wafer that substrate as shown in Figure 3 is (100) crystal orientation, part is removed by reactive ion etching process
Silicon membrane layer and corresponding silicon oxide intermediate 8 above silicon wafer form upper layer silicon thin film 3 and expose the silicon substrate of underclad portion
1, as shown in Figure 4；
Then, as shown in figure 5, (scheming in the upper surface of the partial silicon substrate 1 on the surface and exposing of the upper layer silicon thin film 3
In be the silicon substrate 1 left side) carry out heavily boron diffusion, form the first boron silicide film 51 and the second boron silicide film 52；
Then, it is lithographically formed top electrode figure, and the first silicon fiml top electrode 61 and the is formed using magnetron sputtering electrode metal aluminium
Two silicon fiml top electrodes 62；Referring to Fig. 6, the first silicon fiml top electrode 61 is formed on first boron silicide film 51, described
Two silicon fiml top electrodes 62 are formed on second boron silicide film 52；
Certain thickness is corroded from 1 back side of silicon substrate using tetramethyl aqua ammonia, as shown in fig. 7, back side photoetching, under formation
Layer cantilever beam 4, front are protected with glue, are hanged the upper layer silicon thin film 3 and the lower layer from the back side using hydrofluoric acid wet etching
The separation release of arm beam 4, such as Fig. 8；
One piece of glass substrate 2 is chosen, advanced row standard cleaning sputters one layer of chromium gold as substrate electricity in the glass substrate 2
Pole 7, as shown in Figure 9；
Silicon on glass bonding technique is finally used, by the silicon wafer processed as shown in Figure 8 and the glass lined processed as shown in Figure 9
Bottom 2 is bonded, and sensor as shown in Figure 1 is formed.
Foregoing description is only the description to present pre-ferred embodiments, not to any restriction of the scope of the invention, this hair
Any change, the modification that the those of ordinary skill in bright field does according to the disclosure above content, belong to the protection of claims
Range.
Claims (10)
1. a kind of high-sensitivity wide-range capacitive force transducer, special including the silicon substrate (1) and glass backing plate (2) being mutually bonded
Sign is,
The first end of the silicon substrate (1) is connected with upper layer silicon thin film (3) by medium (8)；The table of the upper layer silicon thin film (3)
Face is sequentially formed with the first boron silicide film (51) and the first film top electrode (61)；
The second end of the silicon substrate (1) is formed with lower layer's silicon cantilever (4), the second end of the silicon substrate (1) and it is described under
The upper surface of layer silicon cantilever (4) is covered with the second boron silicide film (52)；The surface of second boron silicide film (52) is sequentially formed with
Second boron silicide film (52) and the second film top electrode (62)；
The high-sensitivity wide-range capacitive force transducer further includes underlayer electrode (7), is located at the top table of the glass backing plate (2)
Face.
2. high-sensitivity wide-range capacitive force transducer as described in claim 1, which is characterized in that the underlayer electrode (7)
Positioned at the center of the glass backing plate (2).
3. high-sensitivity wide-range capacitive force transducer as claimed in claim 2, which is characterized in that the underlayer electrode (7)
First part and first boron silicide film (51) constitute the first parallel plate capacitor, second part and second boron silicide film (52)
Constitute the second parallel plate capacitor.
4. high-sensitivity wide-range capacitive force transducer as described in claim 1, which is characterized in that lower layer's silicon cantilever
(4) one end is connect with the silicon substrate (1), and the other end is hanging；Its upper surface is flushed with the silicon substrate (1).
5. high-sensitivity wide-range capacitive force transducer as described in claim 1, which is characterized in that the upper layer silicon thin film
(3) one end suspends, and the other end is connect by the medium (8) with the silicon substrate (1).
6. high-sensitivity wide-range capacitive force transducer as described in claim 1, which is characterized in that the upper layer silicon thin film
(3) it is higher than lower layer's silicon cantilever (4), and when upper layer silicon thin film (3) is bent downwardly can touch lower layer's silicon
Cantilever beam (4).
7. high-sensitivity wide-range capacitive force transducer as described in claim 1, which is characterized in that the upper layer silicon thin film
(3) thickness is less than the thickness of lower layer's silicon cantilever (4).
8. a kind of preparation method of high-sensitivity wide-range capacitive force transducer, which comprises the steps of:
There is provided silicon wafer, remove part silicon chip surface silicon membrane layer and corresponding silicon oxide intermediate, formed upper layer silicon thin film simultaneously
Exposed portion silicon substrate；
Heavily boron diffusion is carried out on the surface of the upper layer silicon thin film and the partial silicon substrate of exposing, forms the first boron silicide film and the
Two boron silicide films；
It is lithographically formed top electrode figure, and forms the first silicon fiml top electrode and the second silicon fiml top electrode；
Corrode certain thickness from the silicon substrate back side, back side photoetching forms lower layer's cantilever beam, using hydrofluoric acid wet etching from the back side
By the upper layer silicon thin film and lower layer's cantilever beam separation release；
Glass substrate is provided, one layer of chromium gold is sputtered in the glass substrate as underlayer electrode；
The silicon wafer processed and glass substrate are bonded, the sensor is formed.
9. the preparation method of high-sensitivity wide-range capacitive force transducer as claimed in claim 8, which is characterized in that the silicon
The substrate of piece is (100) crystal orientation.
10. the preparation method of high-sensitivity wide-range capacitive force transducer as claimed in claim 8, which is characterized in that use
Magnetron sputtering electrode metal aluminium forms the first silicon fiml top electrode and the second silicon fiml top electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910701969.4A CN110307919B (en) | 2019-07-31 | 2019-07-31 | High-sensitivity wide-range capacitive force sensor and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910701969.4A CN110307919B (en) | 2019-07-31 | 2019-07-31 | High-sensitivity wide-range capacitive force sensor and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110307919A true CN110307919A (en) | 2019-10-08 |
| CN110307919B CN110307919B (en) | 2024-01-19 |
Family
ID=68082468
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910701969.4A Active CN110307919B (en) | 2019-07-31 | 2019-07-31 | High-sensitivity wide-range capacitive force sensor and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110307919B (en) |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2578323A1 (en) * | 1985-03-01 | 1986-09-05 | Metravib Sa | INTEGRATED SENSOR OF MECHANICAL QUANTITIES WITH CAPACITIVE EFFECT AND MANUFACTURING METHOD. |
| US5188983A (en) * | 1990-04-11 | 1993-02-23 | Wisconsin Alumni Research Foundation | Polysilicon resonating beam transducers and method of producing the same |
| US5343064A (en) * | 1988-03-18 | 1994-08-30 | Spangler Leland J | Fully integrated single-crystal silicon-on-insulator process, sensors and circuits |
| CN2738224Y (en) * | 2004-09-27 | 2005-11-02 | 厦门大学 | Capacitance pressure sensor for vacuum measurement |
| CN101661012A (en) * | 2009-08-11 | 2010-03-03 | 南京理工大学 | Microfilm capacitive type surface stress sensor used for biochemical detection and manufacture method thereof |
| CN104062044A (en) * | 2013-03-20 | 2014-09-24 | 北京大学 | Micro mechanical differential capacitive pressure gauge |
| CN105668500A (en) * | 2016-01-19 | 2016-06-15 | 东南大学 | High-sensitivity wide-range force sensor and manufacturing method thereof |
| CN106290985A (en) * | 2016-07-26 | 2017-01-04 | 上海芯赫科技有限公司 | A kind of condenser type compound sensor and manufacture method thereof |
| CN210037029U (en) * | 2019-07-31 | 2020-02-07 | 中国电子科技集团公司第五十八研究所 | High-sensitivity wide-range capacitive force sensor |
-
2019
- 2019-07-31 CN CN201910701969.4A patent/CN110307919B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2578323A1 (en) * | 1985-03-01 | 1986-09-05 | Metravib Sa | INTEGRATED SENSOR OF MECHANICAL QUANTITIES WITH CAPACITIVE EFFECT AND MANUFACTURING METHOD. |
| US5343064A (en) * | 1988-03-18 | 1994-08-30 | Spangler Leland J | Fully integrated single-crystal silicon-on-insulator process, sensors and circuits |
| US5188983A (en) * | 1990-04-11 | 1993-02-23 | Wisconsin Alumni Research Foundation | Polysilicon resonating beam transducers and method of producing the same |
| CN2738224Y (en) * | 2004-09-27 | 2005-11-02 | 厦门大学 | Capacitance pressure sensor for vacuum measurement |
| CN101661012A (en) * | 2009-08-11 | 2010-03-03 | 南京理工大学 | Microfilm capacitive type surface stress sensor used for biochemical detection and manufacture method thereof |
| CN104062044A (en) * | 2013-03-20 | 2014-09-24 | 北京大学 | Micro mechanical differential capacitive pressure gauge |
| CN105668500A (en) * | 2016-01-19 | 2016-06-15 | 东南大学 | High-sensitivity wide-range force sensor and manufacturing method thereof |
| CN106290985A (en) * | 2016-07-26 | 2017-01-04 | 上海芯赫科技有限公司 | A kind of condenser type compound sensor and manufacture method thereof |
| CN210037029U (en) * | 2019-07-31 | 2020-02-07 | 中国电子科技集团公司第五十八研究所 | High-sensitivity wide-range capacitive force sensor |
Non-Patent Citations (1)
| Title |
|---|
| 曹天捷等: "影响MEMS压控电容变化范围的因素分析", 《电子器件》, vol. 31, no. 3, pages 786 - 790 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110307919B (en) | 2024-01-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104677528B (en) | Capacitive pressure sensor and preparation method thereof | |
| CN100506686C (en) | Method for manufacturing piezoresistance type micro-cantilever beam sensor on SOI silicon sheet | |
| CN1974372B (en) | Monolithic integrated sensor chip for measing three parameters of pressure difference, absolute pressure and temperature and making process thereof | |
| CN105784189B (en) | Si-glass-silicon structure surface acoustic wave temperature and pressure integrated sensor and preparation | |
| CN201653604U (en) | Pressure sensor | |
| CN109786422A (en) | Piezoelectric exciting is by micro- resonance pressure sensor chip of pull-type silicon and preparation method thereof | |
| CN105784222B (en) | Bulk acoustic wave wall surface shearing stress sensor | |
| CN105547464B (en) | MEMS piezoelectric vector hydrophone with cascaded structure and preparation method thereof | |
| CN106569155A (en) | Cantilever beam interdigital capacitance magnetic field sensing probe based on super magnetic induced shrinkage or elongation film | |
| CN205861876U (en) | A kind of cantilever beam interdigital capacitor magnetic field sensing based on giant magnetostrictive thin film is popped one's head in | |
| CN101776501A (en) | MEMS presser sensor chip and manufacturing method thereof | |
| WO2019019843A1 (en) | Double-film capacitive pressure sensor and manufacturing method | |
| JPH10160611A (en) | Electrostatic capacity type transducer | |
| CN104237560A (en) | Acceleration sensor chip capable of resisting transverse effect and manufacturing method thereof | |
| CN107817364A (en) | A kind of axis accelerometer chip of MEMS straight pull and vertical compressions formula two and preparation method thereof | |
| WO2019019783A1 (en) | Wide-range high-precision double-film-integrated capacitive pressure sensor and preparation method therefor | |
| CN105182003B (en) | Torsional pendulum type differential capacitance accelerometer and preparation method with buffer structure | |
| CN114275731A (en) | MEMS-based double-beam type micro-pressure sensing core and preparation process thereof | |
| CN210037029U (en) | High-sensitivity wide-range capacitive force sensor | |
| CN110307919A (en) | A kind of high-sensitivity wide-range capacitive force transducer and preparation method thereof | |
| CN206362470U (en) | A kind of high insulation resistance of resistance to 500V sputtered film sensing element | |
| CN105399047B (en) | A kind of processing method of many electric capacity multi-finger Micro-accelerometers | |
| CN206362469U (en) | A kind of high temperature film pressure-sensing device | |
| CN111397776B (en) | Temperature and pressure composite sensor | |
| CN101599749A (en) | A kind of manufacture method of surface acoustic wave transducer |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |