CN110299278A - Plasma etching bogey and plasma etching machine - Google Patents
Plasma etching bogey and plasma etching machine Download PDFInfo
- Publication number
- CN110299278A CN110299278A CN201910506050.XA CN201910506050A CN110299278A CN 110299278 A CN110299278 A CN 110299278A CN 201910506050 A CN201910506050 A CN 201910506050A CN 110299278 A CN110299278 A CN 110299278A
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- Prior art keywords
- locating part
- wafer
- plasma etching
- bogey
- disc
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/20—Means for supporting or positioning the objects or the material; Means for adjusting diaphragms or lenses associated with the support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
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- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The invention discloses a kind of plasma etching bogey and plasma etching machines, belong to plasma etching field.Plasma etching bogey includes: wafer carrier and at least two locating parts, the wafer carrier and the material of the locating part are SiC, the volume of the wafer carrier is greater than the volume of the locating part, the wafer carrier is disk, each locating part is removably installed in the first disc of the wafer carrier respectively, and locating part described in every two is used for the first disc being fastened on wafer between locating part described in every two.Plasma etching machine includes etch chamber, back helium unit, vacuum unit, air supply unit and bogey, the bogey is for carrying wafer, the bogey matches with the etch chamber, and the bogey is aforementioned plasma etching bogey.
Description
Technical field
The present invention relates to plasma etching field, in particular to a kind of plasma etching bogey and plasma etching
Machine.
Background technique
Plasma etching machine is the equipment for carrying out plasma etching.Generally, wafer is first placed into SiC (silicon carbide)
On pallet, and it is to be etched up to make its, then SiC pallet is placed into the reaction chamber of plasma etching machine, then generate etc.
Ionized gas bombards face to be etched.
Currently, the SiC pallet used in industry is the disk of integrated strip film trap, wafer is located in film trap.Due to pallet
Front is exposed to plasma gas bombardment environment with face to be etched without placing the position (including piece groove edge) of wafer together
In, piece groove edge can also be etched by bombardment, it will thin down, and the position (slot bottom) for placing wafer is not affected by plasma
Its thickness of the bombardment of gas remains unchanged.In use for some time, piece groove edge will be etched to flush with slot bottom region, from
And wafer can not be fixed, it will lead to generation wafer during some mechanical transfers and collide with each other and be damaged.At this moment,
It generally requires to replace entire pallet, however the price of pallet is more expensive, has aggravated production cost.
Summary of the invention
The embodiment of the invention provides a kind of plasma etching bogey and plasma etching machines, can be improved SiC support
The utilization efficiency of disk reduces production cost.The technical solution is as follows:
On the one hand, a kind of plasma etching bogey is provided, the plasma etching bogey includes: wafer
The material of disk and at least two locating parts, the wafer carrier and the locating part is SiC, and the volume of the wafer carrier is big
In the volume of the locating part, the wafer carrier is disk, and each locating part is removably installed in the wafer respectively
First disc of load plate, the first circle that locating part described in every two is used to be fastened on wafer between locating part described in every two
On face.
Optionally, the locating part is platform, and the locating part is inserted on first disc, and the platform surface arrives
The distance of first disc is equal to or more than 0.5mm.
Optionally, the wafer includes the first wafer, and the locating part includes at least three sides, the locating part
First side be arc surface, the first side matches with the peripheral wall of first wafer.
Optionally, the wafer further includes the second wafer, and the second side of the locating part is arc surface, and described the
One side is relative to the second side backwards to being arranged, and the second side is matched with the peripheral wall of second wafer, institute
The first wafer is stated to be placed adjacent with second wafer.
Optionally, the locating part includes the first locating part and the second locating part, and first disc includes inner circle area
With outer collar region, there are two first locating part, the first sides of two first locating parts for the inner circle area arrangement
Or second side is opposite,
The outer collar region has been evenly arranged N number of second locating part, each second locating part to described first
The center of disc is equidistant, and N is the quantity for the wafer that the outer collar region is placed, and N is more than or equal to 3, adjacent three
First side and the first side of the second locating part for being located at the left side of the second locating part are located in the middle in second locating part
Face is opposite, and the second side for being located in the middle the second locating part is opposite with the second side of the second locating part on the right is located at.
Optionally, the locating part include four sides, the first side, the third side, the second side,
And the 4th side is sequentially connected with, the third side is opposite with the 4th side and is plane, the 4th side
The distance of face to third side is not less than 20mm,
Diameter symmetry of two first locating parts relative to the position for being located at inner circle area placement wafer,
The third side of second locating part is overlapped with the line of centres of the two neighboring position for placing wafer, described
The third side of second locating part than second locating part the 4th side farther away from the first disc closed on margin location
It sets.
Optionally, the wafer carrier is equipped with M positioning groove, and the positioning groove is used to indicate the pingbian of wafer
Direction, M are the total amount for the wafer placed in wafer carrier.
Optionally, the plasma etching bogey further includes multiple compressing members, and the compressing member is for being placed on institute
It states on wafer so that the wafer to be pressed in the wafer carrier.
Optionally, the material of the compressing member is ceramics.
On the other hand, provide a kind of plasma etching machine, the plasma etching machine include etch chamber, back helium unit,
Vacuum unit, air supply unit and bogey, the bogey for carrying wafer, the bogey with it is described
Etch chamber matches, and the bogey is aforementioned plasma etching bogey.
Technical solution provided in an embodiment of the present invention has the benefit that carrying out card to wafer by locating part sets
Fixed, since locating part is removably installed in wafer carrier, with the use of bogey, locating part will be carved in use
Erosion consumption, at this moment only replaces locating part, is changed without carrying pallet；And the volume of wafer carrier is greater than the volume of locating part, limit
The price of part is lower with respect to the price of wafer carrier, and the cost of replacement is relatively also lower, can be with to whole wafer load plate
It is etched depleted, does not have to premature failure whole wafer load plate, can be improved the utilization efficiency of SiC pallet, reduction is produced into
This.
Detailed description of the invention
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for
For those of ordinary skill in the art, without creative efforts, it can also be obtained according to these attached drawings other
Attached drawing.
Fig. 1 is a kind of structural schematic diagram of plasma etching bogey provided in an embodiment of the present invention；
Fig. 2 is the structural schematic diagram of locating part provided in an embodiment of the present invention；
Fig. 3 is the schematic diagram of position of the locating part provided in an embodiment of the present invention in wafer carrier.
In attached drawing, 10 wafer carriers, the first disc of 10a, 20 locating parts, 20a first side, 20b second side, 20c
Three sides, 30 positioning grooves.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with attached drawing to embodiment party of the present invention
Formula is described in further detail.
For etching first with ICP (Inductively Coupled Plasma, inductively coupled plasma body), one is introduced
Lower plasma etching process, specifically comprises the following steps.
1, exposure mask process is carried out on (wafer) surface wafer.Exposure mask is exactly photoresist, and one layer of glue of uniform shakedown is upper
Face.Photoresist is divided into positive photoresist, negtive photoresist, it is assumed that the exposure mask on wafer is positive photoresist.
As soon as 2, hidden between wafer and light source with piece photolithography plate with hollow out image, once glue is irradiated to by light
It can react, then disappear, and being photo-etched the part that plate blocks will exist, it can be under exposure mask using other processing
The semiconductor material of layer shields.
3, bombard the entire surface wafer with plasma gas, the semiconductive material portion with glue can be protected by glue not by
Etching, the semiconductor material on wafer that no photoresist is protected can be etched by plasma bombardment.
4, exposure mask is removed, the surface wafer is formed various figure grooves.
Fig. 1 shows a kind of plasma etching bogey provided in an embodiment of the present invention, is suitable for above-mentioned etching process
Step 3 in carry wafer.Referring to Fig. 1, which includes: wafer carrier 10 and at least two limits
Part 20.Wafer carrier 10 and the material of locating part 20 are SiC, and the volume of wafer carrier 10 is greater than the volume of locating part 20, brilliant
Circle load plate 10 is disk, and each locating part 20 is removably installed in the first disc 10a of wafer carrier 10, every two limit respectively
Part 20 is used for the first disc 10a being fastened on wafer between every two locating part 20.
Card is carried out to wafer by locating part 20 and sets fixation, since locating part 20 is removably installed in wafer carrier 10
On, with the use of bogey, locating part 20 will etch consumption in use, only replace locating part 20, be changed without carrying support
Disk；And the volume of wafer carrier 10 is greater than the volume of locating part 20, the price of locating part 20 is low with respect to the price of wafer carrier 10
Some, the cost of replacement is relatively also lower, can be depleted with being etched to whole wafer load plate 10, does not have to premature failure
Whole wafer load plate 10 can be improved the utilization efficiency of SiC pallet, reduce production cost.
Wafer carrier 10 can carry multi-disc wafer, since the volume of wafer is greater than the volume of locating part 20, wafer
The volume of disk 10 is much larger than the volume of locating part 20.
Wherein, the quantity of locating part 20 can be twice of the wafer quantity of the carrying of wafer carrier 10, that is, a piece of wafer
Corresponding two locating parts 20.In order to reduce the quantity of locating part 20 to increase the placement space of wafer, locating part 10 can be with
Fixed function is provided to the wafer of adjacent two panels or more.
Installation site and locating part 20 of the locating part 20 in wafer carrier 10 is discussed in detail below with reference to Fig. 2 and Fig. 3
Shape, installation site and its shape of the locating part 20 in wafer carrier 10 determine the volume of locating part 20, the body of locating part 20
Product is smaller, and the expense of production cost is smaller.
Illustratively, referring to fig. 2, locating part 20 is platform, and locating part 20 is inserted on the first disc 10a, platform surface
To the first disc 10a distance at least more than 0.5mm.Since wafer to be put into space between locating part 20 and from wafer
When load plate 10 takes out wafer, wafer may be contacted with 20 surface of locating part, locating part 20 is designed as platform, surface is flat
Face smoother, damages wafer when avoiding contacting with wafer.Meanwhile platform surface is especially small at a distance from the first disc 10a,
The volume of locating part 20 is further reduced.
First disc 10a is equipped with locating part mounting groove identical with 20 quantity of locating part.Locating part 20 is inserted into accordingly
Locating part mounting groove in.Locating part 20 and locating part mounting groove are clearance fit, and the size of locating part mounting groove compares locating part
20 size is bigger, such as big 0.1mm, and to have certain superfluous difference when allowing to carry out film releasing movement, locating part 20 can installed
It is slightly moved in slot., will be 0.5mm at least higher than disk around after locating part 20 is put into locating part mounting groove, for fixing
With blocking wafer.
Preferably, the distance of platform surface to the first disc 10a are 0.5 to 1mm, in this way, smaller, the volume of height
It is smaller, and locating part 20 can be fixed well with lesser volume.
Illustratively, wafer include the first wafer, locating part 20 include at least three sides, the first of locating part 20
Side 20a is arc surface, and first side 20a is matched with the peripheral wall of the first wafer.It is put down for example, locating part 20 can be taper
Platform, at this moment, the cross section of locating part 20 can be triangle, and there are three sides for the tool of locating part 20.20 side of can also be of locating part
Shape platform, at this moment, the cross section of locating part 20 can be rectangular, and the tool of locating part 20 is there are four side.
Illustratively, wafer further includes the second wafer, and the second side 20b of locating part 20 is arc surface, the first side
Face 20a is relative to second side 20b backwards to being arranged, and second side 20b is matched with the peripheral wall of the second wafer, the first wafer
It is placed adjacent with the second wafer.In this way, a locating part 20 can fix two panels wafer simultaneously, reduce locating part 20
Quantity.
Illustratively, locating part 20 include the first locating part and the second locating part, the first disc 10a include inner circle area and
Outer collar region, there are two the first locating part, the first side 20a or second side of two the first locating parts for inner circle area arrangement
20b is opposite.Outer collar region has been evenly arranged N number of second locating part, each second locating part to the center of the first disc 10a away from
From equal, N is the quantity for the wafer that outer collar region is placed, N is greater than or equal to 3, is located in adjacent three the second locating parts
Between the second locating part first side 20a be located at the first side 20a of the second locating part on the left side it is opposite, be located in the middle
The second side 20b of second locating part is opposite with the second side 20b of the second locating part on the right is located at.
Illustratively, locating part 20 include four sides, first side 20a, third side 20c, second side 20b, with
And the 4th side be sequentially connected with, third side 20c is opposite with the 4th side and is plane, the 4th side to third side 20c
Distance be not less than 20mm.Diameter symmetry of two the first locating parts relative to the position for being located at inner circle area placement wafer,
The third side 20c of second locating part is overlapped with the line of centres of the two neighboring position for placing wafer, the second locating part
Third side 20c than the second locating part the 4th side farther away from the first disc 10a closed on marginal position.In this way, energy
Enough ensure locating part 20 volume be it is the smallest, be further reduced production cost spending.Preferably, third side 20c and the 4th
Side is parallel, convenient for the processing of locating part 20.
In the present embodiment, the size of wafer can be 4 cun (diameter 100mm).But it is noted that wafer is not one
A pure circle, has a pingbian, and pingbian length is 30mm.In order to preferably position pingbian, illustratively, wafer carrier
10 are equipped with M positioning groove 30, and positioning groove 30 is used to indicate the pingbian direction of wafer, and M is to place in wafer carrier 10
Wafer total amount.
Specifically, pingbian is located at corresponding 30 top of positioning groove.When wafer is put between two locating parts 20
It waits, can only just be rotated, can not carry out being displaced.When rotation to the position of positioning groove 30 and platband position are overlapped, just
Notch can be put in jig well, wafer is provoked from the back side, is then sucked and takes away.
Preferably, the positioning groove 30 of outer collar region is close to the outer edge of wafer carrier 10.It is fixed not in SiC disk size
In the case where change, it is desirable to place more wafer only closer to pallet outer ring, just can put more, so selection pingbian pair
Outside, it can put much.
As for the size of positioning groove 30, depending on the shape situation for taking piece jig.
In plasma etching machine, a back helium system is had below SiC disk, is cooled down with the extremely low helium of temperature entire
SiC disk, to cool down wafer, because etching reaction is all to carry out under vacuum conditions, bottom coohng is run out of with helium in order to prevent
Come, so entire pallet and helium cooling system need to seal when being passed through cooling helium, sealing ring had on bottom cooling system,
SiC disk is placed, and is then pushed down again with the mass for being greater than helium pressure from edge, so that it may guarantee entire cooling effect.
Based on this, illustratively, plasma etching bogey further includes multiple compressing members, compressing member for place on a wafer with
Wafer is pressed in wafer carrier 10.
Illustratively, the material of compressing member is ceramics or SiC.The price of ceramics is lower than the price of SiC, still, ceramics
The microcosmic particle of itself can be sputtered under the bombardment of plasma, particle is once splashed on wafer, there can be shadow to quality
It rings.For this purpose, in the present embodiment, the riding position of compressing member is at wafer pingbian.Since pingbian is close to pallet outer ring, outwardly
Setting, ceramics are placed at pingbian, and the particle of sputtering is most of outwardly, are influenced on wafer smaller.Preferably, compressing member can be with
It is vertical with pingbian.
Below with reference to an example and Fig. 3, the determination method of the installation site (locating part mounting groove) of locating part 20 is introduced.
The diameter of wafer carrier 10 can be 380mm, can at most put 94 cun of wafer, and the inner ring position at center puts 1
Piece, outer ring position put 8.Pingbian is unanimously external, and the compressing member for being pressed in pingbian also presses 2mm on the first disc 10a, overall to stay again
5mm, in this way, the distance at pingbian to the edge of wafer carrier 10 is 7mm.The line segment length at arrow A meaning position is just 7mm.?
In the case that the entire area of wafer carrier 10 is constant, outer ring 8 at diameter be round wafer of 100.5 (0.5 is tolerance)
Setting can directly determine, and the position wafer at center can also directly determine.All centers of circle in the position circle wafer at 8 are connected
Line, the line segment of arrow B pointed location are the height 20mm of locating part 20, and perpendicular to line, the height of locating part 20 is too short
It is too small to talk about radian, wafer can not be fixed, so far, completes the determination of the installation site of locating part 20, is i.e. completion locating part mounting groove
Position.The intermediate position wafer is fixed to be used and the locating part 20 of shape as other.The thickness of wafer carrier 10 can be
4mm, locating part mounting groove are set as 3mm depth.In order to take piece is convenient directly to dig straight mouth slot as positioning groove in the position of pingbian
30, positioning groove 30 can be the straight mouth slot of long 8mm, width 2.5mm, ensure that all may be used in film releasing and take piece when in this way
So that pingbian outwardly, reaches best operational characteristic.The depth of positioning groove 30 may be 3mm.It finally does and is slightly less than in figure
The locating part 20 of locating part mounting groove size, 20 thickness of locating part are directly 4mm, are put into locating part mounting groove and just protrude 1mm, this
Wafer can be fixed on disk by sample.
The embodiment of the invention also provides a kind of plasma etching machines, the step 3 suitable for above-mentioned etching process.This it is equal from
Sub- etching machine includes etch chamber, back helium unit, vacuum unit, air supply unit and bogey, and bogey is for carrying crystalline substance
Disk, bogey match with etch chamber.
Illustratively, which is plasma etching bogey shown in fig. 1.
Illustratively, etch chamber is plasma etching for placing plasma etching bogey for salable space
Reaction compartment.Back helium unit is for mentioning helium for cooling.Vacuum unit is for vacuumizing etch chamber.Air supply unit is used
In offer plasma gas.
Card is carried out to wafer by locating part and sets fixation, since locating part is removably installed in wafer carrier, with
The use of bogey, locating part will etch consumption in use, only replace locating part, be changed without carrying pallet；And wafer
The volume of load plate is greater than the volume of locating part, and the price of locating part is lower with respect to the price of wafer carrier, the cost phase of replacement
, can be depleted with being etched to whole wafer load plate to also lower, do not have to premature failure whole wafer load plate, Neng Gouti
The utilization efficiency of high SiC pallet reduces production cost.
The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the invention, it is all in spirit of the invention and
Within principle, any modification, equivalent replacement, improvement and so on be should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of plasma etching bogey, which is characterized in that the plasma etching bogey includes: wafer carrier
(10) and at least two locating parts (20), the material of the wafer carrier (10) and the locating part (20) is SiC, the crystalline substance
The volume of circle load plate (10) is greater than the volume of the locating part (20), and the wafer carrier (10) is disk, each locating part
(20) it is removably installed in the first disc (10a) of the wafer carrier (10) respectively, locating part (20) described in every two is used
In on the first disc (10a) being fastened on wafer between locating part described in every two (20).
2. plasma etching bogey according to claim 1, which is characterized in that the locating part (20) is platform,
The locating part (20) is inserted on first disc (10a), distance of the platform surface to first disc (10a)
Equal to or more than 0.5mm.
3. plasma etching bogey according to claim 2, which is characterized in that the wafer includes the first wafer
Piece, the locating part (20) include at least three sides, and the first side (20a) of the locating part (20) is arc surface, described
First side (20a) is matched with the peripheral wall of first wafer.
4. plasma etching bogey according to claim 3, which is characterized in that the wafer further includes the second crystalline substance
The second side (20b) of disk, the locating part (20) is arc surface, and the first side (20a) is relative to described second side
Face (20b) is backwards to being arranged, and the second side (20b) matches with the peripheral wall of second wafer, first wafer
It is placed adjacent with second wafer.
5. plasma etching bogey according to claim 4, which is characterized in that the locating part (20) includes first
Locating part and the second locating part, first disc (10a) includes inner circle area and outer collar region, and the inner circle area is disposed with
Two first locating parts, the first side (20a) or second side (20b) of two first locating parts relatively,
The outer collar region has been evenly arranged N number of second locating part, each second locating part to first disc
The center of (10a) is equidistant, and N is the quantity for the wafer that the outer collar region is placed, and N is more than or equal to 3, adjacent three
The of the first side (20a) of the second locating part and the second locating part for being located at the left side is located in the middle in second locating part
One side (20a) relatively, is located in the middle the of the second side (20b) of the second locating part and the second locating part for being located at the right
Two side faces (20b) are opposite.
6. plasma etching bogey according to claim 5, which is characterized in that the locating part (20) includes four
Side, the first side (20a), the third side (20c), the second side (20b) and the 4th side are suitable
Secondary connection, the third side (20c) is opposite with the 4th side and is plane, the 4th side to third side
The distance of (20c) is not less than 20mm,
Diameter symmetry of two first locating parts relative to the position for being located at inner circle area placement wafer,
The third side (20c) of second locating part is overlapped with the line of centres of the two neighboring position for placing wafer, institute
The 4th side of the third side (20c) of the second locating part than second locating part is stated farther away from the first disc closed on
The marginal position of (10a).
7. plasma etching bogey according to claim 1, which is characterized in that the wafer carrier (10) is equipped with
M positioning groove (30), the positioning groove (30) are used to indicate the pingbian direction of wafer, and M is to put on wafer carrier (10)
The total amount for the wafer set.
8. plasma etching bogey according to claim 1, which is characterized in that the plasma etching bogey
It further include multiple compressing members, the compressing member is for being placed on the wafer so that the wafer is pressed on the wafer
On load plate (10).
9. plasma etching bogey according to claim 8, which is characterized in that the material of the compressing member is pottery
Porcelain.
10. a kind of plasma etching machine, which is characterized in that the plasma etching machine includes etch chamber, back helium unit, vacuum list
Member, air supply unit and bogey, the bogey is for carrying wafer, the bogey and the etch chamber
Match, the bogey plasma etching bogey as claimed in any one of claims 1 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910506050.XA CN110299278B (en) | 2019-06-12 | 2019-06-12 | Plasma etching bearing device and plasma etching machine |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910506050.XA CN110299278B (en) | 2019-06-12 | 2019-06-12 | Plasma etching bearing device and plasma etching machine |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110299278A true CN110299278A (en) | 2019-10-01 |
| CN110299278B CN110299278B (en) | 2021-10-08 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910506050.XA Active CN110299278B (en) | 2019-06-12 | 2019-06-12 | Plasma etching bearing device and plasma etching machine |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113851402A (en) * | 2021-05-31 | 2021-12-28 | 华灿光电(苏州）有限公司 | Tray for plasma etcher and plasma etcher |
| CN116759283A (en) * | 2023-06-05 | 2023-09-15 | 上海稷以科技有限公司 | Bottom electrode device and wafer processing method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN204825126U (en) * | 2015-04-15 | 2015-12-02 | 聚灿光电科技股份有限公司 | A graphite bears dish for epitaxial wafer processing procedure of LED |
| US20170121819A1 (en) * | 2015-10-29 | 2017-05-04 | Lam Research Corporation | Systems And Methods For Tilting A Wafer For Achieving Deposition Uniformity |
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2019
- 2019-06-12 CN CN201910506050.XA patent/CN110299278B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN204825126U (en) * | 2015-04-15 | 2015-12-02 | 聚灿光电科技股份有限公司 | A graphite bears dish for epitaxial wafer processing procedure of LED |
| US20170121819A1 (en) * | 2015-10-29 | 2017-05-04 | Lam Research Corporation | Systems And Methods For Tilting A Wafer For Achieving Deposition Uniformity |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113851402A (en) * | 2021-05-31 | 2021-12-28 | 华灿光电(苏州）有限公司 | Tray for plasma etcher and plasma etcher |
| CN116759283A (en) * | 2023-06-05 | 2023-09-15 | 上海稷以科技有限公司 | Bottom electrode device and wafer processing method |
| CN116759283B (en) * | 2023-06-05 | 2024-05-14 | 上海稷以科技有限公司 | Bottom electrode device and wafer processing method |
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| Publication number | Publication date |
|---|---|
| CN110299278B (en) | 2021-10-08 |
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