CN110289327B - 基于PbBr2微孔调控的全无机CsPbBr3钙钛矿太阳能电池及其制备方法和应用 - Google Patents
基于PbBr2微孔调控的全无机CsPbBr3钙钛矿太阳能电池及其制备方法和应用 Download PDFInfo
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- CN110289327B CN110289327B CN201910552798.3A CN201910552798A CN110289327B CN 110289327 B CN110289327 B CN 110289327B CN 201910552798 A CN201910552798 A CN 201910552798A CN 110289327 B CN110289327 B CN 110289327B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
- H01L31/035218—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum dots
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Microelectronics & Electronic Packaging (AREA)
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Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN108550655A (zh) * | 2018-05-16 | 2018-09-18 | 暨南大学 | 基于喷雾辅助法制备的全无机钙钛矿太阳能电池及其制备方法和应用 |
CN108807676A (zh) * | 2018-05-16 | 2018-11-13 | 暨南大学 | 基于有机光活化层的宽光谱响应无机钙钛矿太阳能电池及其制备方法和应用 |
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Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN108550655A (zh) * | 2018-05-16 | 2018-09-18 | 暨南大学 | 基于喷雾辅助法制备的全无机钙钛矿太阳能电池及其制备方法和应用 |
CN108807676A (zh) * | 2018-05-16 | 2018-11-13 | 暨南大学 | 基于有机光活化层的宽光谱响应无机钙钛矿太阳能电池及其制备方法和应用 |
Non-Patent Citations (4)
Title |
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Carbon quantum dots as new hole transport material for perovskite solar cells;Sofia Paulo等;《Synthetic Metals》;20160519;第222卷;第17页右栏第3段-第18页左栏第1段 * |
One-pot green synthesis of nitrogen-doped carbon nanoparticles as fluorescent probes for mercury ions;Hong Huang等;《RSC Advances》;20130910;第3卷;第21692页左栏第2段 * |
Using SnO2 QDs and CsMBr3 (M=Sn, Bi, Cu) QDs as Charge-Transporting Materials for 10.6%-Efficiency All-Inorganic CsPbBr3 Perovskite Solar Cells with an Ultrahigh Open-Circuit Voltage of 1.610 V;Yuanyuan Zhao等;《Sol. RRL》;20190108;第3卷(第3期);第1800284.2页右栏第2段,Supporting Information 第21页第2段-第22页第3段 * |
Yuanyuan Zhao等.Using SnO2 QDs and CsMBr3 (M=Sn, Bi, Cu) QDs as Charge-Transporting Materials for 10.6%-Efficiency All-Inorganic CsPbBr3 Perovskite Solar Cells with an Ultrahigh Open-Circuit Voltage of 1.610 V.《Sol. RRL》.2019,第3卷(第3期), * |
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