CN110277648B - Symmetric terahertz polarization insensitive artificial microstructure - Google Patents
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- 230000010287 polarization Effects 0.000 title claims abstract description 27
- 239000000758 substrate Substances 0.000 claims description 40
- 229910052751 metal Inorganic materials 0.000 claims description 19
- 239000002184 metal Substances 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 16
- 239000007769 metal material Substances 0.000 claims description 10
- 238000005192 partition Methods 0.000 claims description 9
- 239000003989 dielectric material Substances 0.000 claims description 7
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 230000005284 excitation Effects 0.000 abstract description 6
- 238000001914 filtration Methods 0.000 abstract description 5
- 230000005540 biological transmission Effects 0.000 abstract description 4
- 238000001514 detection method Methods 0.000 abstract description 4
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- 238000002834 transmittance Methods 0.000 description 4
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0086—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices having materials with a synthesized negative refractive index, e.g. metamaterials or left-handed materials
Abstract
The invention discloses a symmetrical terahertz polarization insensitive artificial microstructure, which is a transmission type hypersurface with a central symmetrical split ring structure and is used for generating various resonance modes. Whether LC resonance or dipole resonance, the vibration of the geometry has little effect on the resonance frequency and transmission amplitude. Under TE and TM excitation, the transmission rate result is consistent, the polarization insensitivity is achieved, and the method can be used for improving the modulation depth of a high-speed unpolarized incident light modulator. Due to the excitation of the high-order resonant mode, the invention can also be applied in various environments such as high-sensitivity biological detection, narrow-band filtering and the like.
Description
Technical Field
The invention relates to the technical field of terahertz modulators, in particular to a symmetrical terahertz polarization insensitive artificial microstructure.
Background
The super-surface is a planar material consisting of a periodic array of microstructures on a dielectric substrate. It can be considered a two-dimensional metamaterial, a new material consisting of engineered sub-wavelength structures, to achieve efficient performance. These artificially designed materials are widely used because they can control and manipulate electromagnetic waves of materials through structures such as modulators, detectors and generators, and optical filters. In recent decades, the super-surface technology has been widely applied in the terahertz frequency region. In the terahertz frequency range, it is difficult to develop electronic and optical elements for terahertz technology implementation due to lack of suitable materials. The super surface can solve the problem, and novel devices designed for the terahertz frequency region are also appeared nowadays. Resonance in the design structure is the key to designing the electromagnetic properties of the hypersurface. Some super-surface structures and their corresponding resonance modes have been extensively studied. The geometric dependence of the electromagnetic properties is also crucial to optimize the resonance of the hypersurface. At present, due to the small size of the terahertz device, certain errors can be generated in processing, and the errors can also influence partial results of the terahertz device.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: the invention provides a symmetrical terahertz polarization insensitive artificial microstructure which solves the problems, wherein the structure has a plurality of different resonance modes, has consistent transmittance results under TE and TM excitation, has the characteristic of polarization insensitivity, and can be used for improving the modulation depth of a non-polarized incident light high-speed modulator. Due to the excitation of the high-order resonant mode, the invention can also be applied in various environments such as high-sensitivity biological detection, narrow-band filtering and the like.
In the present invention, a new super-surface was demonstrated and analyzed that supports several different resonance modes: LC resonance, dipole resonance, and higher order dipole resonance. Each resonance can be identified and distinguished by analyzing their electromagnetic properties, such as transmission spectra, electromagnetic fields, and current density distributions on the structure. Systematic analysis of the geometric dependence of electromagnetic properties has shown that small changes in geometric parameters have little effect on resonance frequency shift and transmission amplitude. This feature facilitates the manufacture of such structures by providing more redundancy. In addition, the design structure is also independent of the polarization state of the incident beam required in several applications.
The invention is realized by the following technical scheme:
the utility model provides a symmetry type terahertz polarization insensitive artifical microstructure, includes substrate medium base plate, be provided with metallic structure on the substrate medium base plate, metallic structure comprises a plurality of cross metal resonance unit periodic arrangement, and every cross metal resonance unit includes square frame and cross grid structure, the grid that is blocked for the inside cross and the center department that sets up of square frame of cross grid structure.
The grid structure is made of metal materials and comprises four rectangular strips and four triangular strips, the tail ends of the rectangular strips are correspondingly connected with the triangular strips, the bottom edges of the triangular strips are equal to the width of the rectangular strips, the vertex angles of the triangular strips point to the inner center of the square outer frame, one rectangular strip and one triangular strip form a group, four groups of the rectangular strips and the triangular strips are intersected and vertical in total, four groups of the rectangular strips are provided with a cross partition in the inner center of the square outer frame, and each partition of the cross partition forms an angle of 45 degrees with the rectangular strip; the opposite sides of adjacent triangular strips are parallel to each other, and the distance between the parallel sides is 1.8-2.3 μm, which is referred to as the gap width.
The scheme for realizing different application environments is that a metal structure is formed by periodically arranging cross metal resonance units, each cross metal resonance unit comprises a square outer frame and a cross grid structure, and the cross grid structure is a grid which is arranged in the square outer frame in a cross manner and is partitioned at the center; the transmission spectra of two orthogonal polarization modes (TE mode and TM mode) are overlapped in the frequency range of 50 GHZ-500 GHZ, and the structure has the characteristic of polarization insensitivity and can be used for improving the modulation depth of a high-speed modulator of non-polarized incident light; the total number of the six resonance points is six, the last four resonance points are high-order dipole resonance modes, and in practice, the sharp resonance can be widely used in various applications such as high-sensitivity biological detection, narrow-band filtering, modulation and the like.
The artificial microstructure of the symmetrical centrosymmetric split ring has consistent transmittance results under TE and TM excitation, has the characteristic of polarization insensitivity, and can be used for improving the modulation depth of a high-speed unpolarized incident light modulator. Due to the excitation of the high-order resonant mode, the invention can also be applied in various environments such as high-sensitivity biological detection, narrow-band filtering and the like.
In view of the fact that the present invention can be implemented as long as the distance between two adjacent sides of two adjacent triangular bars is 1.8-2.3 μm, as a further preferable scheme, the four triangular bars are all isosceles right triangles or equilateral triangles.
Considering that the grid structure is made of a metal material, the metal material is any one of gold, silver, aluminum and copper; as a further preferable scheme, the grid structure is made of gold.
As a further preferable mode, the side length of the square outer frame is 174 μm, the width of the square outer frame is 5 μm, and the thickness of the square outer frame is 0.2 μm; the thicknesses of the rectangular strips and the triangular strips are equal to the thickness of the square outer frame; the substrate dielectric base plate is square, the height of the substrate dielectric base plate is 220 mu m, and the side length of the substrate dielectric base plate of the corresponding part at the bottom of one cross metal resonance unit is 200 mu m; the opposite sides of the adjacent triangular strips are parallel to each other, and the distance between the parallel sides is 2.0 mu m.
Considering that the substrate dielectric substrate can be realized by selecting various materials, the substrate dielectric substrate adopts a gallium arsenide material or a ceramic dielectric material or a crystal dielectric material or a semiconductor material; in a further preferable mode, the substrate medium substrate is made of gallium arsenide material, and has a relative dielectric constant of 12.9 and a magnetic permeability of 1.
The invention has the following advantages and beneficial effects:
1. the invention has the characteristic of insensitive polarization, and can be used for improving the modulation depth of the high-speed modulator of the non-polarized incident light;
2. the invention is characterized in that partial parameters, such as: the distance between the opposite sides of the adjacent triangular strips and the influence on the structure result when the parameters such as the length, the width and the like of the rectangular strips are slightly changed are small, so that the influence on the processing error is small when the structure is manufactured;
3. the invention has simple structure, small volume, high integration level and easy processing.
Drawings
The accompanying drawings, which are included to provide a further understanding of the embodiments of the invention and are incorporated in and constitute a part of this application, illustrate embodiment(s) of the invention and together with the description serve to explain the principles of the invention. In the drawings:
FIG. 1 is a block diagram of a symmetrical super-surface artificial microstructure with multiple resonant modes according to the present invention.
Fig. 2 is an enlarged view of one resonance unit 2 of the present invention.
Fig. 3 is a side view of one resonator element 2 of the invention.
FIG. 4 is a graph showing the transmittance in two incident wave polarization modes (TE mode and TM mode) in the present invention.
Fig. 5 is a surface electric field, current distribution, and current flow diagram of each resonance mode in the present invention.
FIG. 6 is a graph showing the effect of geometric parameters on resonant modes (i.e., simulated transmission spectra of different geometric parameters) of a multi-resonant-mode symmetric super-surface artificial microstructure according to the present invention.
Reference numbers and corresponding part names in the drawings:
1-substrate dielectric substrate, 2-resonance unit, 3-square outer frame, 4-rectangular strip and 5-triangular strip.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail below with reference to examples and accompanying drawings, and the exemplary embodiments and descriptions thereof are only used for explaining the present invention and are not meant to limit the present invention.
Examples
As shown in fig. 1 to 6, a symmetry type terahertz polarization insensitive artificial microstructure, includes substrate medium base plate 1, be provided with metal structure on the substrate medium base plate 1, metal structure comprises a plurality of cross metal resonance unit 2 periodic arrangement, and every cross metal resonance unit 2 includes square frame 3 and cross grid structure, cross grid structure is the grid that the inside cross that sets up of square frame 3 and center department are cut off.
The grid structure is made of metal materials and comprises four rectangular strips 4 and four triangular strips 5, the tail end of one rectangular strip 4 is correspondingly connected with one triangular strip 5, the bottom edge of the triangular strip 5 is equal to the width of the rectangular strip 4, the vertex angles of the triangular strips 5 point to the inner center of the square outer frame 3, one rectangular strip 4 and one triangular strip 5 form one group, four groups which are crossed and vertical are formed totally, four groups of the four groups are provided with a cross partition at the inner center of the square outer frame 3, and each partition of the cross partition forms an angle of 45 degrees with the rectangular strip 4; the opposite sides of the adjacent triangular strips 5 are parallel to each other, and the distance between the parallel sides is 1.8-2.3 μm, which is referred to as the gap width.
In the embodiment, the four triangular strips 5 are all isosceles right triangles or equilateral triangles in shape, considering that the invention can be realized as long as the distance between two adjacent sides of two adjacent triangular strips 5 is 1.8-2.3 μm.
In the embodiment, the substrate medium base plate 1 is a gallium arsenide material, and has a relative dielectric constant of 12.9 and a magnetic permeability of 1. Meanwhile, the substrate dielectric material can also be ceramic dielectric material, crystal dielectric material or semiconductor material.
In an embodiment, the grid structure is made of a metal material, and the metal material is gold, silver, aluminum, copper, or other metal materials.
As shown in fig. 1 to 3, fig. 1 to 3 show a specific embodiment of the present invention, a substrate dielectric substrate 1 is made of a gallium arsenide material, the grating structure is made of a gold material, and various parameters in the artificial microstructure are as follows:
the side length of the square outer frame 3 is 174 μm, the width of the square outer frame 3 is 5 μm, and the thickness of the square outer frame 3 is 0.2 μm; the thicknesses of the rectangular strips 4 and the triangular strips 5 are equal to the thickness of the square outer frame 3;
the shape of the substrate dielectric substrate 1 is square, the height of the substrate dielectric substrate 1 is 220 μm, the side length of the substrate dielectric substrate of the corresponding part at the bottom of one cross metal resonance unit 2 is 200 μm, and then a metal structure formed by periodically arranging nine resonance units 2 is adopted in the embodiment and is a 3 × 3 matrix; the total side length of the whole substrate medium base plate 1 is 600 mu m;
the opposite sides of the adjacent triangular strips 5 are parallel to each other, and the distance between the parallel sides is 2.0 mu m; the rectangular bar 4 had a length of 78 μm and a width of 5 μm.
Fig. 4 shows the transmittance of two incident wave polarization modes (TE mode, TM mode), the transmission spectra of the two modes are consistent in the whole frequency range, and since any linearly polarized incident wave can be decomposed into the above two modes, it is shown that this structure is insensitive to the polarization direction of the incident wave, and in some application fields, polarization insensitive super surface devices, such as biosensing devices and modulators, are required, and the polarization insensitive super surface devices can be used to improve the signal response strength and the modulation strength of incident waves with different polarizations.
The electric field current distribution of the present invention is shown in fig. 5, under the normal incidence polarization, the current flow direction of the resonance point P1 is that one end of the opening starts to flow to one end of the opening along the ring structure and reciprocates, the electric field distribution is mainly concentrated at the opening, and P1 is L-C resonance. Similarly, the current flow direction characteristic of the resonance point P2 is: the current intensity is maximum at the middle position of the metal rod of the equivalent inductor, and meanwhile, the current intensity at the upper end and the lower end of the metal rod is minimum, so that the P2 can be judged to be a plurality of dipole mixed resonance. In addition, since dipole resonance is the dominant mode, the Q value of P2 is smaller than P1. The P3-P6 are mainly higher-order modes, and the bandwidths of the modes are very small, namely 0.5GHz, 10.5GHz, 2GHz and 4.7GHz respectively, so that the high-bandwidth optical fiber has high value in many applications, such as high-sensitivity application technologies of biosensing, filtering, adjusting and the like. Where the Q value is the quality factor of the resonant circuit.
Fig. 6 shows the effect of the geometrical parameters of the artificial microstructure of the invention on the resonance mode, where in fig. 6 d is the distance between opposite sides of adjacent triangular strips 5, this distance being denoted as the gap width; t is the thickness of the square outer frame 3; w is the width of the square outer frame 3; a is the side length of the square outer frame 3. It is found from fig. 6 that different resonant modes have different sensitivities to changes of geometric parameters, the resonant point P1 has the smallest change, and the resonant points P2-P6 have relatively obvious changes, but errors generated in actual processing processes have little influence on device performance, and devices with different operating frequencies can be realized by controlling the length of the structure of the invention.
The above-mentioned embodiments are intended to illustrate the objects, technical solutions and advantages of the present invention in further detail, and it should be understood that the above-mentioned embodiments are merely exemplary embodiments of the present invention, and are not intended to limit the scope of the present invention, and any modifications, equivalent substitutions, improvements and the like made within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (6)
1. The utility model provides a symmetry type terahertz polarization insensitive artificial microstructure, includes substrate medium base plate (1), its characterized in that: the substrate medium base plate (1) is provided with a metal structure, the metal structure is formed by periodically arranging a plurality of cross metal resonance units (2), each cross metal resonance unit (2) comprises a square outer frame (3) and a cross grid structure, and the cross grid structure is a cross grid which is arranged in the square outer frame (3) and is partitioned at the center;
the grid structure is made of metal materials and comprises four rectangular strips (4) and four triangular strips (5), the tail end of one rectangular strip (4) is correspondingly connected with one triangular strip (5), the bottom edge of the triangular strip (5) is equal to the width of the rectangular strip (4), the vertex angles of the triangular strips (5) point to the inner center of the square outer frame (3), one rectangular strip (4) and one triangular strip (5) form one group, four groups which are crossed and vertical are formed totally, a cross partition is arranged in the inner center of the square outer frame (3) of the four groups, and each partition of the cross partition forms an angle of 45 degrees with the rectangular strip (4);
the opposite sides of the adjacent triangular strips (5) are parallel to each other, and the distance between the parallel sides is 1.8-2.3 mu m.
2. The symmetrical terahertz polarization insensitive artificial microstructure of claim 1, which is characterized in that: the four triangular strips (5) are all isosceles right triangles or equilateral triangles.
3. The symmetrical terahertz polarization insensitive artificial microstructure of claim 1, which is characterized in that: the grid structure is made of a metal material, and the metal material is any one of gold, silver, aluminum and copper.
4. The symmetrical terahertz polarization insensitive artificial microstructure of claim 1, which is characterized in that: the side length of the square outer frame (3) is 174 μm, the width of the square outer frame (3) is 5 μm, and the thickness of the square outer frame (3) is 0.2 μm; the thicknesses of the rectangular strips (4) and the triangular strips (5) are equal to the thickness of the square outer frame (3);
the substrate dielectric base plate (1) is square, the height of the substrate dielectric base plate (1) is 220 micrometers, and the side length of the substrate dielectric base plate of the corresponding part at the bottom of one cross metal resonance unit (2) is 200 micrometers;
the opposite sides of the adjacent triangular strips (5) are parallel to each other, and the distance between the parallel sides is 2.0 mu m.
5. The symmetrical terahertz polarization insensitive artificial microstructure of claim 1, which is characterized in that: the substrate dielectric substrate (1) is made of gallium arsenide materials or ceramic dielectric materials or crystal dielectric materials or semiconductor materials.
6. The symmetric terahertz polarization insensitive artificial microstructure of claim 5, wherein: the substrate dielectric substrate (1) is made of gallium arsenide materials, the relative dielectric constant of the substrate dielectric substrate is 12.9, and the magnetic conductivity of the substrate dielectric substrate is 1.
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| CN112216993B (en) * | 2020-09-23 | 2021-07-06 | 电子科技大学 | Ultra-thin ultra-wideband chessboard structure RCS reduced super surface |
| CN113782938B (en) * | 2021-09-15 | 2022-05-27 | 哈尔滨学院 | Annular dipole resonance resonator |
| CN114597665B (en) * | 2022-03-22 | 2023-09-29 | 深圳大学 | Transmission super-surface array |
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| CN102983409A (en) * | 2012-12-11 | 2013-03-20 | 电子科技大学 | High-transmissivity flat left-handed material |
| CN107465000A (en) * | 2017-07-23 | 2017-12-12 | 中国人民解放军空军工程大学 | Broadband, the insensitive spiral coding RCS of polarization reduce super surface and its design method |
| CN109037958A (en) * | 2018-07-24 | 2018-12-18 | 山西大学 | A kind of tunable THz wave meta-material absorber of mono-/bis-frequency range |
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| CN103454784B (en) * | 2013-09-23 | 2015-12-09 | 哈尔滨工程大学 | The tunable light-operated switch of a kind of THz wave based on artificial electromagnetic material |
| CN108376840B (en) * | 2018-01-10 | 2020-09-04 | 华侨大学 | Broadband high-efficiency transmission type polarization converter |
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| CN102983409A (en) * | 2012-12-11 | 2013-03-20 | 电子科技大学 | High-transmissivity flat left-handed material |
| US10177454B1 (en) * | 2016-11-04 | 2019-01-08 | Hrl Laboratories, Llc | Lumped element tensor impedance surfaces |
| CN107465000A (en) * | 2017-07-23 | 2017-12-12 | 中国人民解放军空军工程大学 | Broadband, the insensitive spiral coding RCS of polarization reduce super surface and its design method |
| CN109037958A (en) * | 2018-07-24 | 2018-12-18 | 山西大学 | A kind of tunable THz wave meta-material absorber of mono-/bis-frequency range |
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Effective date of registration: 20231214 Address after: Room 1003, 10th Floor, Office Building, Free Trade Building, No. 8 Xiyuan North Street, Xiyong Street, High tech Zone, Shapingba District, Chongqing, 400031 Patentee after: Chongqing Taihe Zhixin Technology Development Co.,Ltd. Address before: Building 6-1, No. 29 Guangdong Middle Road, Gaotang Street, Wushan County, Chongqing, 404799 Patentee before: Ma Yong |
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