CN110277648A - A kind of insensitive artificial micro-structure of symmetric form terahertz polarization - Google Patents
A kind of insensitive artificial micro-structure of symmetric form terahertz polarization Download PDFInfo
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- CN110277648A CN110277648A CN201910655580.0A CN201910655580A CN110277648A CN 110277648 A CN110277648 A CN 110277648A CN 201910655580 A CN201910655580 A CN 201910655580A CN 110277648 A CN110277648 A CN 110277648A
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- 239000000463 material Substances 0.000 claims description 26
- 239000007769 metal material Substances 0.000 claims description 10
- 238000005192 partition Methods 0.000 claims description 8
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 230000005284 excitation Effects 0.000 abstract description 6
- 238000001914 filtration Methods 0.000 abstract description 5
- 230000000737 periodic effect Effects 0.000 abstract description 4
- 238000000034 method Methods 0.000 description 5
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
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- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0086—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices having materials with a synthesized negative refractive index, e.g. metamaterials or left-handed materials
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- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The invention discloses a kind of insensitive artificial micro-structures of symmetric form terahertz polarization, transmission-type hypersurface with central symmetry driffractive ring structure, for generating various modes of resonance, including substrate dielectric substrate, metal structure is provided on the substrate dielectric substrate, the metal structure is made of multiple cross metal resonant element periodic arrangements, each cross metal resonant element includes square outline border and cross cell structure, the grid that the cross cell structure is square the cross being arranged inside outline border and is separated at center.Either LC resonance or dipole resonance, the vibration of geometry is to resonance frequency and transmits influence all very littles of amplitude.Under TE and TM excitation, transmissivity result is consistent, has the characteristics that polarization insensitive, can be used for improving the modulation depth of no polarization incident light high-speed modulator.Due to the excitation of higher order resonances mould, the present invention can also be detected in high-sensitivity biological and be got application in the various environment such as narrow-band filtering.
Description
Technical field
The present invention relates to Terahertz modulator techniques fields, and in particular to a kind of symmetric form terahertz polarization is insensitive artificial
Micro-structure.
Background technique
Super surface is a kind of planar materials, is made of the periodical microstructure array on medium substrate.It can be recognized
To be two-dimentional Meta Materials, a kind of new material being made of engineering sub-wavelength structure, to obtain effective performance.These engineers
Material because it can pass through the structure controls such as modulator, detector and generator and optical filter and manipulation material
Electromagnetic wave and be widely used.In recent decades, super sufacing is widely used in Terahertz frequency field.
In Terahertz frequency range, due to lacking suitable material, it is difficult electronics and optics of the exploitation for Terahertz Technology realization
Element.Super surface then can solve this problem, nowadays also occur it is some for Terahertz frequency field and design novel
Equipment.Resonance in design structure is the key that design hypersurface electromagnetic property.Some super surface textures and its corresponding resonance
Mode has been widely studied.The geometrical dependence of electromagnetic property is also vital for the resonance for optimizing hypersurface.Currently,
THz devices are since its size is smaller, and work in-process can generate certain error, and these errors also will affect Terahertz device
The result of the part of part.
Summary of the invention
The technical problems to be solved by the present invention are: many super surface textures of today be difficult to occur a variety of differences simultaneously it is humorous
Vibration mode, the present invention provides a kind of insensitive artificial micro-structure of symmetric form terahertz polarization to solve the above problems, the structures
There are many different modes of resonance, and under TE and TM excitation, transmissivity result is consistent, has the characteristics that polarization insensitive, can use
In the modulation depth for improving no polarization incident light high-speed modulator.Due to the excitation of higher order resonances mould, the present invention can also be in height
It gets application in the various environment such as sensitivity biological detection and narrow-band filtering.
In the present invention, a kind of new super surface is demonstrated and analyzes, it supports several different resonance modes: LC is total
Vibration, dipole resonance and high-order dipole resonance.Each resonance can be identified and distinguished between by analyzing their electromagnetic property,
Such as transmitted spectrum, electromagnetic field and the current density distribution in structure.Point of system has been carried out to the geometrical dependence of electromagnetic property
Analysis, the results showed that, the minor change of geometric parameter has little effect resonance frequency shift and transmission amplitude.It is more by providing
Redundancy, this characteristic are conducive to the manufacture of this class formation.In addition, the structure of design is also independent of incidence needed for several applications
Light beam polarization state.
The present invention is achieved through the following technical solutions:
A kind of insensitive artificial micro-structure of symmetric form terahertz polarization, including substrate dielectric substrate, the substrate dielectric base
Metal structure is provided on plate, the metal structure is made of multiple cross metal resonant element periodic arrangements, each cross
Metal resonant element includes that square outline border and cross cell structure, the cross cell structure are square inside outline border
The grid separated at the cross of setting and center.
The cell structure use metal material, the cell structure include four rectangular strips and four triangle items, one
A rectangular strip end is correspondingly connected with a triangle item, and the bottom edge of triangle item and the width of rectangular strip are equal, and triangle item
Apex angle is directed at the interior center of square outline border, and a rectangular strip and a triangle item form one group, is formed intersect in total
Vertical four groups, and there is a partition of cross at four groups of interior centers in square outline border, every of the cross partition every
Disconnected and rectangular strip is in 45 degree of angles；Be parallel to each other between the opposite side of adjacent triangle item, and the distance between parallel edges be 1.8~
2.3 μm, this distance is denoted as gap width.
The present invention realizes that the scheme of different application environment is by metal structure by cross metal resonant element periodic arrangement
Composition, each cross metal resonant element include square outline border and cross cell structure, and cross cell structure is pros
The cross being arranged inside shape outline border and the grid separated at center；The present invention two cross polarization modes (TE mode and
TM mode) transmitted spectrum be overlapped in frequency range 50GHZ~500GHZ, which has the characteristics that polarization insensitive, can
For improving the modulation depth of no polarization incident light high-speed modulator；Altogether there are six resonance point, rear four resonance points are the present invention
High-order dipole resonance mode, in practice, these sharp resonance are each in high-sensitivity biological detection, narrow-band filtering, modulation etc.
It is available in kind application to be widely used.
The artificial micro-structure of symmetric form central symmetry driffractive ring of the invention, under TE and TM excitation, transmissivity result is consistent,
Have the characteristics that polarization insensitive, can be used for improving the modulation depth of no polarization incident light high-speed modulator.Due to higher order resonances
The excitation of mould, the present invention can also be detected in high-sensitivity biological and be got application in the various environment such as narrow-band filtering.
As long as in view of meet two neighboring triangle item adjacent two edges between spacing be 1.8~2.3 μm can
Realize the present invention, scheme, four triangle strips are isosceles right triangle or wait as a further preference
Side triangle.
In view of the cell structure uses metal material, metal material is gold, silver, aluminium, any one in copper；As
Further preferred embodiment, the cell structure is using golden material.
The side length of scheme as a further preference, the square outline border is 174 μm, the width of the square outline border
5 μm, it is described square outline border with a thickness of 0.2 μm；And the thickness of the rectangular strip, triangle item is equal to outside the square
The thickness of frame；The substrate dielectric substrate shape is square, and the height of the substrate dielectric substrate is 220 μm, a cross
The side length of the substrate dielectric substrate of metal resonant element bottom corresponding part is 200 μm；The opposite side of the adjacent triangle item it
Between be parallel to each other, and the distance between parallel edges be 2.0 μm.
It is realized in view of the substrate dielectric substrate can choose multiple material, the substrate dielectric substrate uses arsenic
Gallium material or ceramic medium material or crystal medium material or semiconductor material；Scheme as a further preference, institute
Substrate dielectric substrate is stated using GaAs material, relative dielectric constant 12.9, magnetic conductivity 1.
The present invention has the advantage that and the utility model has the advantages that
1, the present invention has the characteristics that polarization insensitive, and the modulation that can be used for improving no polarization incident light high-speed modulator is deep
Degree；
2, the present invention works as partial parameters, such as: the distance between the opposite side of adjacent triangle item, the length of rectangular strip, width
Etc. parameters occur minor change when on the structure results influence less, therefore the present invention production when mismachining tolerance influence it is smaller；
3, structure of the present invention is simple, small in size, and integrated level is high, easy to process.
Detailed description of the invention
Attached drawing described herein is used to provide to further understand the embodiment of the present invention, constitutes one of the application
Point, do not constitute the restriction to the embodiment of the present invention.In the accompanying drawings:
Fig. 1 is the symmetrical super surface artificial micro-structure entire block diagram of a variety of modes of resonance of the invention.
Fig. 2 is the enlarged drawing of a resonant element 2 of the invention.
Fig. 3 is the side view of a resonant element 2 of the invention.
Fig. 4 is the transmissivity spectrogram in the present invention under two kinds of incidence wave polarization modes (TE mode, TM mode).
Fig. 5 is surface field, current distribution and the current flow diagrams of each mode of resonance in the present invention.
Fig. 6 be a variety of modes of resonance of the invention symmetrically super surface artificial micro-structure geometric parameter on mode of resonance influence
Scheme (i.e. the simulated transmission spectrogram of different geometric parameter).
Label and corresponding parts title in attached drawing:
1- substrate dielectric substrate, 2- resonant element, 3- square outline border, 4- rectangular strip, 5- triangle item.
Specific embodiment
To make the objectives, technical solutions, and advantages of the present invention clearer, below with reference to embodiment and attached drawing, to this
Invention is described in further detail, and exemplary embodiment of the invention and its explanation for explaining only the invention, are not made
For limitation of the invention.
Embodiment
As shown in Figures 1 to 6, a kind of insensitive artificial micro-structure of symmetric form terahertz polarization, including substrate dielectric substrate
1, be provided with metal structure on the substrate dielectric substrate 1, the metal structure by multiple cross metal resonant elements 2 periodically
It rearranges, each cross metal resonant element 2 includes square outline border 3 and cross cell structure, the cross grid
The grid that structure is square the cross being arranged inside outline border 3 and is separated at center.
The cell structure uses metal material, and the cell structure includes four rectangular strips 4 and four triangle items 5,
One 4 end of rectangular strip is correspondingly connected with a triangle item 5, and the bottom edge of triangle item 5 is equal with the width of rectangular strip 4, and three
The apex angle of angle-shaped strip 5 is directed at the interior center of square outline border 3, and a rectangular strip 4 and a triangle item 5 form one group,
Four groups of intersecting vertical are formed in total, and there are a cross partition, the cross in four groups of interior centers in square outline border 3
Every partition and the rectangular strip 4 of partition are in 45 degree of angles；It is parallel to each other between the opposite side of adjacent triangle item 5, and between parallel edges
Distance be 1.8~2.3 μm, this distance is denoted as gap width.
In embodiment, it is contemplated that as long as meeting the spacing between the adjacent two edges of two neighboring triangle item 5 is 1.8
~2.3 μm achieve that the present invention, and four 5 shapes of triangle item are isosceles right triangle or equilateral triangle.
In embodiment, the substrate dielectric substrate 1 is GaAs material, relative dielectric constant 12.9, magnetic conductivity
It is 1.Meanwhile substrate media material can also be using materials such as ceramic medium material, crystal medium material or semiconductor materials.
In embodiment, the cell structure uses metal material, and metal material is the metal materials such as gold, silver, aluminium, copper.
As shown in Figure 1 to Figure 3, Fig. 1 to Fig. 3 provides a specific embodiment of the invention, and substrate dielectric substrate 1 uses arsenic
Change gallium material, the cell structure uses golden material, and the parameters in artificial micro-structure are as follows:
The side length of the square outline border 3 is 174 μm, 5 μm of width of the square outline border 3, the square outline border 3
With a thickness of 0.2 μm；And the thickness of the rectangular strip 4, triangle item 5 is equal to the thickness of the square outline border 3；
1 shape of substrate dielectric substrate is square, and the height of the substrate dielectric substrate 1 is 220 μm, a cross
The side length of the substrate dielectric substrate of 2 bottom corresponding part of metal resonant element is 200 μm, then humorous using nine in the present embodiment
The metal structure of 2 periodic arrangement of unit of shaking composition is 3 × 3 matrix；Entirely total side length of substrate dielectric substrate 1 is
600μm；
It is parallel to each other between the opposite side of the adjacent triangle item 5, and the distance between parallel edges is 2.0 μm；Rectangular strip 4
A length of 78 μm, width is 5 μm.
Fig. 4 shows the transmissivity under two kinds of incidence wave polarization modes (TE mode, TM mode), in entire frequency range
Interior, the transmission spectrum of both of which is consistent, since the incidence wave of any linear polarization can be decomposed into the group of both the above mode
At illustrating that such structure is insensitive for the polarization direction of incidence wave, in certain application fields, need to polarize insensitive super surface
Device, such as biosensing device, modulator, can use the insensitive super surface device of polarization improve signal response intensity and
The modulate intensity of not same polarization incidence wave.
As shown in figure 5, under vertical incidence polarization, the current direction of resonance point P1 is out for field current distribution of the invention
Mouth one end starts to flow to open at one end along ring structure, and moves back and forth, and field distribution is concentrated mainly on opening, and P1 is
L-C resonance.Similar, the current direction feature of resonance point P2 is: in the medium position of the metallic rod of equivalent inductance, current strength
Maximum is presented, at the same time, minimum is presented in metallic rod upper and lower ends current strength, by the above feature, it can be determined that P2 is multiple
Dipole hybrid resonant.In addition, the Q value of P2 is less than P1 since dipole resonance is dominant pattern.P3~P6 is mainly higher order mould
Formula, and the bandwidth very little of this quasi-mode, respectively 0.5GHz, 10.5GHz, 2GHz and 4.7GHz, in many applications have compared with
The application technologies such as high value, such as highly sensitive bio-sensing, filtering, adjustment.Wherein, Q value be resonance circuit quality because
Number.
Fig. 6 is influence of the geometric parameter to mode of resonance of artificial micro-structure of the present invention, and in Fig. 6, d is adjacent triangle item
The distance between 5 opposite side, this distance are denoted as gap width；T is the thickness of the square outline border 3；W is square outline border 3
Width；A is square the side length of outline border 3.The susceptibility for finding that different modes of resonance changes geometric parameter by Fig. 6 is different
Sample, resonance point P1 variation is minimum, and resonance point P2~P6 has relatively apparent variation, but in the error of actual processing technique generation
Device performance is influenced less, while can realize the device of different operating frequency by the control of the length to structure of the invention
Part.
Above-described specific embodiment has carried out further the purpose of the present invention, technical scheme and beneficial effects
It is described in detail, it should be understood that being not intended to limit the present invention the foregoing is merely a specific embodiment of the invention
Protection scope, all within the spirits and principles of the present invention, any modification, equivalent substitution, improvement and etc. done should all include
Within protection scope of the present invention.
Claims (7)
1. a kind of insensitive artificial micro-structure of symmetric form terahertz polarization, including substrate dielectric substrate (1), it is characterised in that: institute
It states and is provided with metal structure on substrate dielectric substrate (1), the metal structure is periodical by multiple cross metal resonant elements (2)
It rearranges, each cross metal resonant element (2) includes square outline border (3) and cross cell structure, the cross
The grid that cell structure is square the cross being arranged inside outline border (3) and is separated at center.
2. a kind of insensitive artificial micro-structure of symmetric form terahertz polarization according to claim 1, it is characterised in that: described
Cell structure uses metal material, and the cell structure includes four rectangular strips (4) and four triangle items (5), a rectangle
Item (4) end is correspondingly connected with a triangle item (5), and the bottom edge of triangle item (5) is equal with the width of rectangular strip (4), and three
The apex angle of angle-shaped strip (5) is directed at the interior center of square outline border (3), a rectangular strip (4) and triangle item (5) shape
At one group, four groups of intersecting vertical are formed in total, and there is a cross partition at four groups of interior centers in square outline border (3),
Every partition of the cross partition and rectangular strip (4) are in 45 degree of angles；
It is parallel to each other between the opposite side of adjacent triangle item (5), and the distance between parallel edges is 1.8~2.3 μm.
3. a kind of insensitive artificial micro-structure of symmetric form terahertz polarization according to claim 2, it is characterised in that: four
Triangle item (5) shape is isosceles right triangle or equilateral triangle.
4. a kind of insensitive artificial micro-structure of symmetric form terahertz polarization according to claim 2, it is characterised in that: described
Cell structure uses metal material, and metal material is gold, silver, aluminium, any one in copper.
5. a kind of insensitive artificial micro-structure of symmetric form terahertz polarization according to claim 2, it is characterised in that: described
The side length of square outline border (3) is 174 μm, 5 μm of width of the square outline border (3), the thickness of the square outline border (3)
It is 0.2 μm；And the thickness of the rectangular strip (4), triangle item (5) is equal to the thickness of the square outline border (3)；
Substrate dielectric substrate (1) shape is square, and the height of the substrate dielectric substrate (1) is 220 μm, a cross
The side length of the substrate dielectric substrate of metal resonant element (2) bottom corresponding part is 200 μm；
It is parallel to each other between the opposite side of the adjacent triangle item (5), and the distance between parallel edges is 2.0 μm.
6. a kind of insensitive artificial micro-structure of symmetric form terahertz polarization according to claim 1, it is characterised in that: described
Substrate dielectric substrate (1) is using GaAs material or ceramic medium material or crystal medium material or semiconductor material.
7. a kind of insensitive artificial micro-structure of symmetric form terahertz polarization according to claim 6, it is characterised in that: described
Substrate dielectric substrate (1) uses GaAs material, relative dielectric constant 12.9, magnetic conductivity 1.
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| CN112216993A (en) * | 2020-09-23 | 2021-01-12 | 电子科技大学 | Ultra-thin ultra-wideband chessboard structure RCS reduced super surface |
| CN113782938A (en) * | 2021-09-15 | 2021-12-10 | 哈尔滨学院 | Annular dipole resonance resonator |
| CN114597665A (en) * | 2022-03-22 | 2022-06-07 | 深圳大学 | Transmission super-surface array |
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