CN110277370B - Critical dimension test strip pattern structure, photomask and material layer - Google Patents
Critical dimension test strip pattern structure, photomask and material layer Download PDFInfo
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- CN110277370B CN110277370B CN201810210226.2A CN201810210226A CN110277370B CN 110277370 B CN110277370 B CN 110277370B CN 201810210226 A CN201810210226 A CN 201810210226A CN 110277370 B CN110277370 B CN 110277370B
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/44—Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
Abstract
The invention provides a graphic structure of a key dimension test strip, which comprises: the first test strip frame is arranged in a rectangular area and provided with a first test part, a second test part and a third test part, one end part of the second test part is connected with one side of the first test part, the other end part of the second test part is connected with one end part of the third test part, and the first test part and the third test part are parallel to each other and have asymmetric width and length so as to form an orientation identification characteristic. The invention also provides a material layer and a photomask. By implementing the invention, the abnormal condition of the exposure definition reversal can be found through the outline structure of the test part.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a graphic structure of a critical dimension test strip, a photomask and a material layer.
Background
The photolithography process, which aims to form a patterned photoresist Layer (Photo Resist Layer) on a patterned material Layer, is one of the most important links in various stages of a semiconductor manufacturing process; the etching process uses the patterned photoresist layer as a Mask (Mask) to etch the exposed material layer to form a patterned material layer. When the pattern width of the patterned material layer is an important parameter for the characteristics of the electronic device (or the pattern width is the smallest of the patterned wafer layers), the width is referred to as the Critical Dimension (CD), and the material layer is referred to as the Critical material layer. Since the variation of the critical dimension has a great influence on the characteristics of the electronic device, the critical dimension error must be controlled within a certain range so as not to degrade the quality of the electronic device.
Referring to fig. 1, in a general photolithography process, in order to monitor the cd error of the patterned cd layer, a test strip 120 having the cd of a simple cd layer pattern is often formed on a Scribe Line (i.e., a thick dotted Line between dice 110) between dice 110 on a wafer 100. This is because the integrated circuit pattern on the surface of the die 110 is usually very complex, so that the critical dimension of the patterned critical material layer is not easily measured directly, or the process of the die 110 is not suitable for measuring the critical dimension of the patterned critical material layer directly, so the critical dimension of the simple critical material layer pattern on the test strip 120 must be measured first, and then the critical dimension of the critical material layer pattern on the die 110 must be obtained.
Referring to fig. 2 to 5, the structure of the test portion commonly used for measurement at present includes: an L-shaped test strip 130 shown in fig. 2, a vertical I-shaped test strip 140 shown in fig. 3, a lateral I-shaped test strip 150 shown in fig. 4, and a cross-shaped test strip 160 shown in fig. 5, among others. The structural feature of such a test section is that the whole is an axisymmetric pattern structure, for example, symmetrical along a horizontal line or a vertical line. Thus, when exposing the critical material layer and forming the test portion at the same time, it is difficult to find the abnormal condition of the opposite exposure definition through the outline structure of the test portion.
Disclosure of Invention
Embodiments of the present invention provide a pattern structure of a critical dimension test strip, a photomask, and a material layer to solve or alleviate one or more technical problems in the prior art.
As a first aspect of embodiments of the present invention, embodiments of the present invention provide a critical dimension test strip pattern structure, including: the first test strip frame is arranged in the rectangular area and provided with a first test part, a second test part and a third test part, one end of the second test part is connected with one side of the first test part, the other end of the second test part is connected with one end of the third test part, the first test part and the third test part are parallel to each other, and the first test part and the third test part have asymmetrical width and length so as to form an orientation identification feature.
With reference to the first aspect, in a first implementation manner of the first aspect, the first test strip frame is disposed in the rectangular region in a specific arrangement manner, and the specific arrangement manner enables the rectangular region to synchronously form a second test strip frame which is opposite to the first test strip frame in a concave-convex manner; the second test strip frame is provided with a fourth test part, a fifth test part and a sixth test part, one end of the fifth test part is connected with one side of the fourth test part, the other end of the fifth test part is connected with one end of the sixth test part, the fourth test part and the sixth test part are parallel to each other and have asymmetric width and length, the fourth test part size corresponds to the first test part size, the fifth test part size corresponds to the second test part size, and the sixth test part size corresponds to the third test part size.
With reference to the first implementation manner of the first aspect, in a second implementation manner of the first aspect, the first test strip frame further includes a seventh test portion disposed parallel to the second test portion, and the seventh test portion connects an end of the first test portion away from the position identification feature and an end of the third test portion away from the position identification feature, so that a portion of the first test portion, the second test portion, the third test portion, and the seventh test portion enclose a first inner rectangular area; and the second test strip frame further comprises an eighth test portion arranged parallel to the fifth test portion, the eighth test portion connecting an end of the fourth test portion proximate to the orientation identifying feature and an end of the sixth test portion proximate to the orientation identifying feature such that a portion of the fourth test portion, the fifth test portion, the sixth test portion and the eighth test portion enclose a second inner rectangular area; wherein the seventh test portion and the second test portion both have the same length but different widths.
With reference to the second implementation manner of the first aspect, in a third implementation manner of the first aspect, the first test strip frame is in a P-type structure, the second test strip frame is in a d-type structure, and the first test strip frame is joggled with the second test strip frame.
With reference to the first aspect, in a fourth implementation manner of the first aspect, the first test strip frame further includes a peripheral test portion disposed parallel to the second test portion, the peripheral test portion connecting an end of the first test portion away from the orientation-identifying feature and an end of the third test portion away from the orientation-identifying feature, such that a portion of the first test portion, the second test portion, the third test portion, and the peripheral test portion enclose an inner rectangular area;
wherein, the peripheral test part and the second test part both have the same length but different widths.
With reference to the fourth implementation manner of the first aspect, in a fifth implementation manner of the first aspect, the rectangular area outside the first test strip frame further includes at least two built-in test parts parallel to each other; wherein the built-in test part is parallel to the first test part and is not connected with the first test strip frame.
With reference to the fifth implementation manner of the first aspect, in a sixth implementation manner of the first aspect, the widths of the at least two mutually parallel built-in test parts gradually increase in a direction away from the orientation recognition feature in the arrangement order.
With reference to the first aspect, in a seventh implementation manner of the first aspect, the minimum width of the test portion in the critical dimension test strip pattern structure is a ratio of a half wavelength of light that is exposed to form the critical dimension test strip pattern structure on the material layer to an aperture of the exposed optical lens.
With reference to the first aspect, in an eighth implementation manner of the first aspect, the identification name of the material layer used for forming the critical dimension test strip pattern structure is further included, and the identification name is disposed in the rectangular area.
In a second aspect, embodiments of the present invention further provide a material layer, including: a plurality of dice and a cutting area between the plurality of dice, wherein the critical dimension test strip pattern structure according to any one of the embodiments of the first aspect is formed in the cutting area.
In a third aspect, embodiments of the present invention further provide a photomask, including a die pattern and a pattern corresponding to the pattern structure of the critical dimension test strip according to any embodiment of the first aspect, where the critical dimension test strip is used to measure the critical dimension of the die pattern.
According to the technical scheme, the first test strip frame with the critical dimension test strip pattern structure comprises a plurality of test parts, wherein one end part of the second test part is connected with one side edge of the first test part, one side edge of the second test part is connected with one end part of the third test part, the first test part and the third test part are parallel to each other and have asymmetric width and length, so that the first test strip frame forms an asymmetric structure, and the protruding part of the first test part relative to the third test part can be used as an orientation identification feature, so that when exposure is carried out to form the critical dimension test strip and a crystal square material layer, whether reverse exposure or reverse exposure exists in the current exposure can be judged through the structure of the critical dimension test strip.
The foregoing summary is provided for the purpose of description only and is not intended to be limiting in any way. In addition to the illustrative aspects, embodiments, and features described above, further aspects, embodiments, and features of the present invention will be readily apparent by reference to the drawings and following detailed description.
Drawings
In the drawings, like reference numerals refer to the same or similar parts or elements throughout the several views unless otherwise specified. The figures are not necessarily to scale. It is appreciated that these drawings depict only some embodiments in accordance with the disclosure and are therefore not to be considered limiting of its scope.
FIG. 1 is a schematic diagram of a wafer structure provided in the prior art;
FIG. 2 is a schematic structural diagram of an L-shaped test strip provided by the prior art;
FIG. 3 is a schematic diagram of a vertical type I test strip provided by the prior art;
FIG. 4 is a schematic structural diagram of a lateral type I test strip provided by the prior art;
FIG. 5 is a schematic diagram of a cross-shaped test strip provided by the prior art;
FIG. 6 is a schematic structural diagram of a graphical structure of a CD test strip according to an embodiment of the present invention;
FIG. 7A is a schematic structural diagram of another exemplary critical dimension test strip pattern provided by embodiments of the present invention;
FIG. 7B is a schematic structural diagram of another exemplary CD test strip pattern provided by an embodiment of the present invention;
FIG. 8 is a schematic diagram of a graphical structure of a CD test strip with an identification designation according to an embodiment of the present invention;
FIG. 9 is a schematic structural diagram of a first embodiment of a built-in test portion disposed in a pattern structure of a CD test strip according to an embodiment of the present invention;
FIG. 10 is a schematic structural diagram of a second embodiment of a built-in test portion disposed in a pattern structure of a CD test strip according to an embodiment of the present invention;
FIG. 11 is a schematic structural diagram of a third embodiment of a built-in test portion disposed in a pattern configuration of a CD test strip according to an embodiment of the present invention;
FIG. 12 is a schematic structural diagram of a fourth embodiment of a built-in test portion disposed in a pattern configuration of a CD test strip according to an embodiment of the present invention;
FIG. 13 is a schematic structural diagram of a material layer provided in accordance with an embodiment of the present invention; and
fig. 14 is a schematic structural diagram of a photomask according to an embodiment of the present invention.
Description of reference numerals:
100-wafer; 110-crystal square; 120-a test strip;
a 130-L type test strip; 140-vertical type I test strips; 150-lateral type I test strip;
160-cross test strip;
200-critical dimension test strip pattern structure; 210-a first test strip frame; 220-second test strip frame;
230-a rectangular area; 240-built-in test part; 250-identification name;
211-a first test portion; 212-a second test portion; 213-third test section; 214-seventh test section; 215-inner rectangular area/first inner rectangular area;
221-a fourth test section; 222-a fifth test section; 223-sixth test section; 224-eighth test portion; 225-a second inner rectangular area;
300-a layer of material; 310-crystal square; 320-a cutting zone;
400-a photomask; 410-a die pattern; 420-pattern corresponding to the graphic structure of the critical dimension test strip;
a-width of the first test portion; b-length of the first test portion; c-width of fifth test section;
d-the length of the second test portion; e-width of the third test portion; f-length of the third test portion;
g-width of the seventh test section; k-the length of the side of the rectangular area;
m-orientation recognition features.
Detailed Description
In the following, only certain exemplary embodiments are briefly described. As those skilled in the art will recognize, the described embodiments may be modified in various different ways, all without departing from the spirit or scope of the present invention. Accordingly, the drawings and description are to be regarded as illustrative in nature, and not as restrictive.
In the description of the present invention, it is to be understood that the terms "central," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," "circumferential," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the invention and to simplify the description, and are not intended to indicate or imply that the referenced device or element must have a particular orientation, be constructed and operated in a particular orientation, and are not to be considered limiting of the invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integrally formed; the connection can be mechanical connection, electrical connection or communication; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
In the present invention, unless otherwise expressly stated or limited, "above" or "below" a first feature means that the first and second features are in direct contact, or that the first and second features are not in direct contact but are in contact with each other via another feature therebetween. Also, the first feature being "on," "square," and "over" the second feature includes the first feature being directly above and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly above and obliquely above the second feature, or simply meaning that the first feature is at a lesser level than the second feature.
The following disclosure provides many different embodiments or examples for implementing different features of the invention. To simplify the disclosure of the present invention, the components and arrangements of specific examples are described below. Of course, they are merely examples and are not intended to limit the present invention. Furthermore, the present invention may repeat reference numerals and/or letters in the various examples, such repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed.
Referring to fig. 6, an embodiment of the present invention provides a pattern structure 200 of a cd test strip, including: a first test strip frame 210 and a second test strip frame 220. The first test strip frame 210 has a first test portion 211, a second test portion 212 and a third test portion 213, the first test portion 211 and the second test portion 212 are connected perpendicularly to each other, the second test portion 212 and the third test portion 213 are connected perpendicularly to each other, that is, one end of the second test portion 212 is connected to one side of the first test portion 211, the other end of the second test portion 212 is connected to one end of the third test portion 213, so that the first test portion 211 and the third test portion 213 are parallel, and both the first test portion 211 and the third test portion 213 have asymmetric widths and lengths, and further, a protruding portion of the first test portion 211 relative to the third test portion 213 can be used as an orientation identification feature M, thereby avoiding the occurrence of the condition that the inversion exposure cannot be identified.
In one embodiment, as shown in fig. 6, first test strip frame 210 further includes a peripheral test portion 214 disposed parallel to second test portion 212, peripheral test portion 214 connecting an end of first test portion 211 distal from orientation-identifying feature M and an end of third test portion 213 distal from orientation-identifying feature M such that a portion of first test portion 211, second test portion 212, third test portion 213, and peripheral test portion 214 enclose an inner rectangular area 215; the peripheral test portion 214 and the second test portion 212 have the same length but different widths. Further, at least two built-in test parts 240 parallel to each other are further included in the rectangular region 230 outside the first test strip frame 210; the built-in test part 240 is parallel to the first test part 211 and is not connected to the first test strip frame 210. Preferably, the width of the built-in test part 240 is gradually increased in the direction away from the orientation recognition feature M in the arrangement order. It should be noted that the lengths of the built-in test portions 240 may be the same or different, and the provision of a plurality of built-in test portions 240 with different widths may provide various sizes for testing, thereby improving applicability. In the present embodiment, the first test strip frame 210 and the built-in test part 240 may have both a ridge-shaped structure and a groove structure.
In another embodiment, as shown in FIG. 7A, the first test strip frame 210 is disposed in the rectangular area 230 in a specific arrangement that allows the rectangular area 230 to simultaneously form a second test strip frame that is opposite the first test strip frame 210. The second test strip frame 220 has a fourth test portion 221, a fifth test portion 222 and a sixth test portion 223, the fourth test portion 221 and the fifth test portion 222 are connected perpendicularly to each other, the fifth test portion 222 and the sixth test portion 223 are perpendicular to each other, that is, one end of the fifth test portion 222 is connected to one side of the fourth test portion 221, the other end of the fifth test portion 222 is connected to one end of the sixth test portion 223, so that the fourth test portion 221 and the sixth test portion 223 are parallel to each other, and both the fourth test portion 221 and the sixth test portion 223 have asymmetric widths and lengths, and the fourth test portion 221 corresponds to the first test portion 211 in size, the fifth test portion 222 corresponds to the second test portion 212 in size, and the sixth test portion 223 corresponds to the third test portion 213 in size. Furthermore, the protruding portion of the fourth testing portion 221 with respect to the sixth testing portion 223 can be used as an orientation recognition feature when an exposure method opposite to that of the first test strip frame is adopted, thereby avoiding the occurrence of the situation that the inverted exposure is not recognized. Preferably, the first testing portion 211 is parallel to the second testing portion 212, and the testing portions are perpendicular to each other, so that the structure of the critical dimension test strip pattern structure 200 of the present embodiment includes two testing portions, i.e., the X direction and the Y direction, so as to facilitate testing the critical dimensions of the material layers in different directions. The first test strip frame 210 and the second test strip frame 220 are arranged in the rectangular area 230, the first test strip frame 210 and the second test strip frame 220 enclose a non-axisymmetric pattern, and the spatial structures of the first test strip frame 210 and the second test strip frame 220 are different, so that the critical dimension test strip pattern structure 200 of the embodiment forms a non-axisymmetric pattern, which can facilitate finding the abnormal situation of the exposure during the inversion of the exposure, and on the other hand, the abnormal situation of the exposure can be found during the front and back exposure due to the fact that the spatial structures of the first test strip frame 210 and the second test strip frame 220 enclosing the non-axisymmetric pattern are different.
Preferably, the test portions in the first test strip frame 210 are sequentially connected to form an inverted structure with the letter h, the test portions in the second test strip frame 220 are sequentially connected to form a mirror-type structure with the letter h, and the first test strip frame 210 and the second test strip frame 220 enclose a non-axisymmetric pattern, but the spatial structure of the first test strip frame 210 is different from the spatial structure of the second test strip frame 220.
Further, as shown in fig. 7B, the first test strip frame 210 further includes a seventh test portion 214, and the second test strip frame 220 further includes an eighth test portion 224; the seventh testing portion 214 is parallel to the second testing portion 212, and the seventh testing portion 214 is connected to an end of the first testing portion 211 far from the position identification feature M and an end of the third testing portion 213 far from the position identification feature M, respectively, so that a first inner rectangular region 215 is defined by a portion of the first testing portion 211, the second testing portion 212, the third testing portion 213, and the seventh testing portion 214; and the eighth test portion 224 is parallel to the fifth test portion 222, and the eighth test portion 224 is respectively connected to an end of the fourth test portion 221 close to the position identification feature M and an end of the sixth test portion 223 far from the position identification feature M, so that a portion of the fourth test portion 221, the fifth test portion 222, the sixth test portion 223 and the eighth test portion 224 enclose a second inner rectangular region 225; the seventh test portion 214 and the second test portion 212 have the same length but different widths, and the eighth test portion 224 and the fifth test portion 222 may have the same length but different widths.
Preferably, a P-type structure is formed in the first test strip frame 210; and the second test strip frame 220 forms a d-shaped structure, and the first test strip frame 210 and the second test strip frame 220 are joggled to form a non-axisymmetric pattern, but the spatial structure of the first test strip frame 210 is different from that of the second test strip frame 220.
In one embodiment, when the spatial structure of the first test strip frame 210 is a rib-like structure with respect to the rectangular area 230 and the spatial structure of the second test strip frame 220 is a groove-like structure with respect to the first test strip frame 210, as shown in fig. 7B, the spatial structure of the rectangular area of the first test strip frame 210 should be a groove-like structure with respect to the first test strip frame 210, and the spatial structure of the second inner rectangular area 225 of the second test strip frame 220 should be a rib-like structure with respect to the second test strip frame 220; and when the spatial structure of the first test strip frame 210 is a groove structure with respect to the rectangular area 230, and the spatial structure of the second test strip frame 220 is a rib-like structure with respect to the first test strip frame 210, as shown in fig. 7B, the spatial structure of the first inner rectangular area 215 of the first test strip frame 210 should be a rib-like structure with respect to the first test strip frame 210, and the spatial structure of the rectangular area of the second test strip frame 220 should be a groove structure with respect to the second test strip frame 220. Specifically, the spatial structure of the first test strip frame 210 and the second test strip frame 220 may be determined according to the process requirements.
The first test section 211 and the fourth test section 221 have the same length and width, the second test section 212 and the fifth test section 222 have the same length and width, and the third test section 213 and the sixth test section 223 have the same length and width. Since the first test strip frame 210 and the second test strip frame 220 are disposed opposite to each other in a concave-convex manner, the first test part 211, the second test part 212, the third test part 213, and the seventh test part 214 in the first test strip frame 210 are all at the same height or within the same height interval; the fourth test portion 221, the fifth test portion 222, the sixth test portion 223, and the eighth test portion 224 in the second test strip frame 220 are all at the same height or within the same height interval, but the height or the height interval at which the test portion in the first test strip frame 210 is located is different from the height or the height interval at which the test portion in the second test strip frame 220 is located.
And, with respect to the plane of the rectangular area 230, when the heights of the connected test parts in the first test strip frame 210 or the first test strip frame 220 are different from each other, the dotted line in the figure where the connection of the connected test parts is present is in the actual configuration; the border of the test portion is present in the actual structure when the test portion in the first test strip frame 210 or the first test strip frame 220 is not in the same horizontal plane as the plane of the rectangular area 230. In addition, when the heights between the connected test parts in the first test strip frame 210 or the first test strip frame 220 are the same, the dotted line representing the connection of the connected test parts in the drawing is absent in the solid structure and is continuous and integral; and when a test portion in the second test strip frame 220 is located on the same horizontal plane as the plane of the rectangular area 230, the broken line representing the connection of the test portion and the rectangular area 230 does not exist in the actual structure, and is merged with the rectangular area 230.
To increase the measurement diversity of the cd test strip pattern 200, the dimensions of the test portion of the cd test strip pattern 200 can be set as follows:
illustratively, as shown in fig. 8, the widths of the first testing portion 211 and the fourth testing portion 221 may be set within a size interval of 1 μm to 2 μm, for example, the widths of both are a, taking 2 μm; the length of the first testing portion 211 is the same as that of the fourth testing portion 221, and may be set according to the area width of the actual cutting area, and is generally selected from 10 μm to 90 μm, for example, B is 14 μm. The widths of the second testing portion 212 and the fifth testing portion 222 can be set within a size interval of 1 μm to 2 μm, for example, the widths of both testing portions are C, and 2 μm is taken; the lengths of the second testing portion 212 and the fifth testing portion 222 are the same, and may be set according to the area width of the actual cutting area, and may be selected from 5 μm to 80 μm, for example, D is 5.3 μm. The widths of the third testing part 213 and the sixth testing part 223 can be set in the size interval of 0.32 μm to 1 μm, for example, the widths of the third testing part and the sixth testing part are both E, and 0.7 μm is taken; the third test portion 213 and the sixth test portion 223 have the same length, for example, F is 7.7 μm. The widths of the seventh test portion 214 and the eighth test portion 224 can be set within a size interval of 0.32 μm to 1 μm, for example, the widths of both test portions are G, which is 0.7 μm; the seventh test portion 214 and the eighth test portion 224 have the same length and are the same as the second test portion, for example, D is 5.3 μm. In the embodiment, the width of the test portion is larger than 1 μm to 2 μm and the middle dimension is 0.32 μm to 1 μm, so that various dimensions can be provided for measuring the critical dimension of the current material layer, and the test portion is not required to be arranged for measuring each critical dimension of the current material layer, thereby being beneficial to improving the measurement efficiency of the manufacturing process.
The first inner rectangular region 215 of the first test strip frame 210 and the inner rectangular region 225 of the second test strip frame 220 may include a plurality of built-in test portions 240 that are parallel to each other, as described in the following embodiments by way of example:
in the first embodiment, the region surrounded by the test portions in the second test strip frame 220 includes at least two built-in test portions 240 parallel to each other, and for example, fig. 8 and 9, it is assumed that the region includes 6 built-in test portions 240 parallel to each other, and the built-in test portions 240 are parallel to the fourth test portion 221. In the second embodiment, as shown in fig. 10, the built-in test part 240 of fig. 8 and 9 is parallel to the fifth test part 222. In the third embodiment, the area surrounded by the test portions in the first test strip frame 210 includes at least two built-in test portions 240 parallel to each other, and as an example, in fig. 11, the area includes 6 built-in test portions 240 parallel to each other, and the built-in test portions 240 are parallel to the first test portion 211. In the fourth embodiment, as shown in fig. 12, it is parallel to the second test part 212, compared to the built-in test part 240 of fig. 11. Among the above four embodiments, it is more preferable that the built-in test part 240 is connected to the test parts at both sides of the region thereof perpendicularly to each other.
Preferably, the spatial structure of the built-in test part 240 provided in this embodiment is the same as the spatial structure of the first test strip frame 210, that is, when the first test strip frame 210 is a convex strip-shaped structure, the built-in test part 240 is a convex strip-shaped structure; when the first test strip frame 210 has a groove structure, the built-in test part 240 has a groove structure. And, the width of the built-in test part 240 in the rectangular region of the first or second test strip frame 210 or 220 may be increased one by one in the arrangement order. Taking FIG. 8 as an example, the width of the built-in test part 240 in the ranking orders 1 and 2 is 0.32 μm, the width of the built-in test part 240 in the ranking orders 3 and 4 is 0.45 μm, and the width of the built-in test part 240 in the ranking orders 5 and 6 is 0.7 μm, arranged from left to right. The specific implementation can also be arranged from right to left. The width of each built-in test portion 240 may also fall within the same size interval, e.g., 0.32 μm to 0.7 μm. And the interval between the built-in test parts 240 may be the same as the width of the built-in test parts 240 adjacent thereto, and the spatial structure of the interval with respect to the built-in test parts 240 is different from that of the built-in test parts. Therefore, the present embodiment can also provide a smaller dimension with a width of 0.32 μm to 0.7 μm for measuring the critical dimension of the current material layer, thereby further improving the applicability of the present embodiment.
This exampleThe minimum width of the test portion of the CD test strip pattern 200 is determined by the light used in the exposure process and the aperture of the optical lens, specifically, the half wavelength used in the exposure process
And the aperture of the optical lens
The ratio of the two, i.e., the critical dimension of the test portion of the critical dimension test strip pattern 200
. Assuming that the current material layer is an inline layer, the wavelength of the light used in the exposure process is 365nm, and the aperture of the optical lens used therein
0.57, the minimum width of the test portion in the cd test strip pattern structure 200 needs to be set to 0.32 μm before exposure, i.e. the width of the test portion in the cd test strip pattern structure 200 is set to be greater than or equal to 0.32 μm, so that the cd test strip pattern structure 200 can be formed on the material layer by the transfer pattern in the exposure process. Assuming that the current material is KRF layer, the wavelength of the light used in the exposure process is 365nm, and the aperture of the optical lens is used
0.7, the minimum width of the test portion in the cd test strip pattern structure 200 needs to be set to 0.177 μm before exposure, i.e. the width of the test portion in the cd test strip pattern structure 200 is set to be greater than or equal to 0.177 μm, so that the cd test strip pattern structure 200 can be formed on the material layer by the transfer pattern in the exposure process.
In one embodiment, the identification name 250 of the material layer on which the cd test strip pattern 200 is formed may also be disposed in the rectangular area 230 in which the cd test strip pattern 200 is located, and for example, as shown in fig. 8, the identification name 250 of the material layer may be disposed on the left side of the cd test strip pattern 200, and the identification name 250 is illustrated as XXX in fig. 8. For example, the width H of the identification name 250 may be set to be 4 μm, and may be set according to the width of the region of the actual cutting region, which is generally selected from 2 μm to 45 μm, and the length of the identification name 250 is the same as the length of the first test portion 211, and may be 14 μm. The rectangular area 230 may also be a square, the side length of which is also set according to the area width of the actual cutting area, and based on the values of the width and length of each test strip and the values of the width and length of the identification name in the foregoing example, the side length K of the rectangular area in the embodiment may be 18 μm when the rectangular area is a square.
As shown in fig. 13, an embodiment of the invention further provides a material layer 300, including: a plurality of dice 310 and a cutting area 320 between the dice 310, wherein the cd test strip pattern 200 provided in the foregoing embodiments may be formed in the cutting area 320.
As shown in fig. 14, an embodiment of the present invention further provides a photomask 400, which includes a die pattern 410 and a pattern 420 of the critical dimension test strip pattern 200 provided in the foregoing embodiment, wherein the critical dimension test strip pattern 200 is used for measuring the critical dimension of the die pattern 410.
Specifically, the die pattern 410 on the photomask and the pattern 420 of the CD test strip pattern 200 are transferred to the material layer during the exposure process, the material layer forms the plurality of dies 310 and the dicing area 320 between the plurality of dies 310, and the dicing area 320 includes one or more CD test strip patterns 200, and the CD of the dies 310 can be inferred by measuring the CD of the CD test strip patterns 200.
In the embodiment of the present invention, the structure of the critical dimension test strip pattern structure 200 includes a plurality of test portions, the first test strip frame 210 and the second test strip frame 220 formed by the test portions form a non-axisymmetric pattern, and the spatial structures of the first test strip frame 210 and the second test strip frame 220 are different, so that when exposure is performed to form the critical dimension test strip pattern structure 200 and the die 310 on the material layer, whether reverse exposure or inverted exposure exists in the current exposure can be determined by the critical dimension test strip pattern structure 200. And the test portion of the critical dimension test strip pattern structure 200 has various line width dimensions, and there is no need to set one test portion for measuring each critical dimension of one current material layer, which is beneficial to improving the measurement efficiency of the manufacturing process.
While the invention has been described with reference to specific embodiments, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (11)
1. A critical dimension test strip pattern structure comprising:
the first test strip frame is arranged in a rectangular area and provided with a first test part, a second test part and a third test part, one end of the second test part is connected with one side of the first test part, the other end of the second test part is connected with one end of the third test part, the first test part and the third test part are parallel to each other and have asymmetric width and length, so that an orientation identification feature is formed, and the orientation identification feature comprises a protruding part of the first test part relative to the third test part.
2. The cd test strip pattern structure of claim 1, wherein said first test strip frame is disposed in said rectangular area in a specific configuration that synchronizes said rectangular area to form a second test strip frame that is concave-convex inverted with respect to said first test strip frame;
the second test strip frame is provided with a fourth test part, a fifth test part and a sixth test part, one end of the fifth test part is connected with one side of the fourth test part, the other end of the fifth test part is connected with one end of the sixth test part, the fourth test part and the sixth test part are parallel to each other and have asymmetric width and length, the fourth test part and the first test part are the same in length and width, the fifth test part and the second test part are the same in length and width, and the sixth test part and the third test part are the same in length and width.
3. The critical dimension test strip pattern structure of claim 2, wherein the first test strip frame further includes a seventh test portion disposed parallel to the second test portion, the seventh test portion connecting an end of the first test portion distal from the orientation-identifying feature and an end of the third test portion distal from the orientation-identifying feature such that a portion of the first test portion, the second test portion, the third test portion, and the seventh test portion define a first inner rectangular area; and
the second test strip frame further comprises an eighth test portion arranged parallel to the fifth test portion, the eighth test portion connecting an end of the fourth test portion proximate to the orientation identifying feature and an end of the sixth test portion distal from the orientation identifying feature such that a portion of the fourth test portion, the fifth test portion, the sixth test portion and the eighth test portion enclose a second inner rectangular area;
wherein the seventh test portion and the second test portion both have the same length but different widths.
4. The critical dimension test strip pattern structure of claim 3, wherein the first test strip frame is in a P-type configuration, the second test strip frame is in a d-type configuration, and the first test strip frame is joggled with the second test strip frame.
5. The cd test strip pattern structure of claim 1 wherein said first test strip frame further includes a perimeter test portion disposed parallel to said second test portion, said perimeter test portion connecting an end of said first test portion distal from said orientation identifying feature and an end of said third test portion distal from said orientation identifying feature such that a portion of said first test portion, said second test portion, said third test portion and said perimeter test portion define an inner rectangular area;
wherein, the peripheral test part and the second test part both have the same length but different widths.
6. The critical dimension test strip pattern structure of claim 5, further comprising at least two built-in test portions parallel to each other in a rectangular area outside the first test strip frame; wherein the built-in test part is parallel to the first test part and is not connected with the first test strip frame.
7. The critical dimension test strip pattern structure of claim 6, wherein the widths of the at least two built-in test portions parallel to each other increase one by one in the order of arrangement in a direction away from the orientation identifying feature.
8. The critical dimension test strip pattern structure of claim 1 wherein the minimum width of the test section in the critical dimension test strip pattern structure is the ratio of the half wavelength of the light that is exposed to form the critical dimension test strip pattern structure in the material layer to the aperture of the exposed optical lens.
9. The critical dimension test strip pattern structure of claim 1, further comprising a logo name for a material layer used to form the critical dimension test strip disposed within the rectangular area.
10. A material layer, comprising: a dicing area between a plurality of dice and the plurality of dice, wherein the critical dimension test strip pattern structure of claim 1 is formed in the dicing area.
11. A photomask comprising a die pattern and a pattern corresponding to the patterned structure of the cd test strip of claim 1, wherein the cd test strip is used to measure the cd of the die pattern.
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| CN1164049A (en) * | 1995-03-22 | 1997-11-05 | 现代电子产业株式会社 | Method for fabricating light exposure mask |
| CN1355557A (en) * | 2000-11-29 | 2002-06-26 | 联华电子股份有限公司 | Structure of key size measuring strip |
| CN102280438A (en) * | 2011-08-01 | 2011-12-14 | 上海宏力半导体制造有限公司 | Test mark for critical dimension in microlithography process |
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| KR100741989B1 (en) * | 2006-06-23 | 2007-07-23 | 삼성전자주식회사 | Overlay mark and method of measuring an overlay degree |
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|---|---|---|---|---|
| CN1164049A (en) * | 1995-03-22 | 1997-11-05 | 现代电子产业株式会社 | Method for fabricating light exposure mask |
| CN1355557A (en) * | 2000-11-29 | 2002-06-26 | 联华电子股份有限公司 | Structure of key size measuring strip |
| CN102280438A (en) * | 2011-08-01 | 2011-12-14 | 上海宏力半导体制造有限公司 | Test mark for critical dimension in microlithography process |
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